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Saito Wataru  齋藤 渉 (羽田野 渉)

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羽田野渉

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Researcher Number 10741770
Other IDs
Affiliation (Current) 2025: 九州大学, 応用力学研究所, 教授
Affiliation (based on the past Project Information) *help 2023 – 2024: 九州大学, 応用力学研究所, 教授
2019 – 2020: 九州大学, 応用力学研究所, 教授
Review Section/Research Field
Principal Investigator
Basic Section 21060:Electron device and electronic equipment-related / 0302:Electrical and electronic engineering and related fields
Keywords
Principal Investigator
パワーデバイス / 過電圧ストレス / アバランシェ降伏 / 高電圧 / GaNトランジスタ / 低損失 / 低耐圧 / スイッチング制御 / パワーMOSFET / 制御 / オン抵抗 / パワーMOSFET
  • Research Projects

    (2 results)
  • Research Products

    (7 results)
  •  低損失GaNパワーIC実現に向けた高電圧ストレスによる破壊メカニズムの研究Principal Investigator

    • Principal Investigator
      齋藤 渉 (羽田野渉)
    • Project Period (FY)
      2023 – 2026
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      Kyushu University
  •  A new low-voltage power MOSFET structure and control to break through theoretical limit for high efficiency electric vehiclePrincipal Investigator

    • Principal Investigator
      Saito Wataru
    • Project Period (FY)
      2019 – 2020
    • Research Category
      Grant-in-Aid for Research Activity Start-up
    • Review Section
      0302:Electrical and electronic engineering and related fields
    • Research Institution
      Kyushu University

All 2024 2023 2021 2020

All Journal Article Presentation

  • [Journal Article] Overvoltage Failure Process of Cascode GaN Field Effect Transistors2024

    • Author(s)
      Saito Wataru、Nishizawa Shin‐ichi
    • Journal Title

      physica status solidi (a)

      Volume: 221 Issue: 21 Pages: 2300791-2300791

    • DOI

      10.1002/pssa.202300791

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-23K26163
  • [Journal Article] Assist Gate MOSFETs for Improvement of On-Resistance and Turn-Off Loss Trade-Off2020

    • Author(s)
      Saito Wataru、Nishizawa Shin-ichi
    • Journal Title

      IEEE Electron Device Letters

      Volume: 41 Pages: 1060-1062

    • DOI

      10.1109/led.2020.2991927

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K23518
  • [Presentation] GaN-HEMTの過電圧印加時破壊過程のデバイス依存2024

    • Author(s)
      齋藤 渉,西澤 伸一
    • Organizer
      応用物理学会2024年春季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K26163
  • [Presentation] Failure Process of GaN-HEMTs by Repetitive Overvoltage Stress2023

    • Author(s)
      Wataru Saito, Shin-Ichi Nishizawa
    • Organizer
      The 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K26163
  • [Presentation] GaN-HEMTの過電圧印加時破壊過程2023

    • Author(s)
      齋藤 渉,西澤 伸一
    • Organizer
      応用物理学会2023年秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K26163
  • [Presentation] Overvoltage Failure Process of Cascode GaN FETs2023

    • Author(s)
      Wataru Saito, and Shin-ichi Nishizawa
    • Organizer
      14th International Conference on Nitride Semiconductors (ICNS)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K26163
  • [Presentation] Power Loss Reduction of Low-Voltage Power MOSFET by Combination of Assist Gate Structure and Gate Control Technology2021

    • Author(s)
      Wataru Saito and Shin-ichi Nishizawa
    • Organizer
      International Symposium on Power Semiconductor Devices and ICs
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K23518

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