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Oka Hiroshi  岡 博史

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岡 博史  オカ ヒロシ

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Researcher Number 10828007
Affiliation (Current) 2025: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員
Affiliation (based on the past Project Information) *help 2023: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究員
2018 – 2021: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究員
Review Section/Research Field
Principal Investigator
Basic Section 21060:Electron device and electronic equipment-related / Basic Section 21050:Electric and electronic materials-related / 0302:Electrical and electronic engineering and related fields
Keywords
Principal Investigator
ゲルマニウムスズ / キャリア散乱 / Si MOSFET / キャリア捕獲 / 界面準位評価 / 極低温 / クライオCMOS / Si-MOSトランジスタ / ナノワイヤトランジスタ / 溶融結晶化 … More / トランジスタ / 固相結晶化 / CMOS / MOSFET / フラッシュランプアニール / 固相成長 / MEMS / フォトディテクター / 中赤外センサ / 固相エピタキシー Less
  • Research Projects

    (3 results)
  • Research Products

    (6 results)
  •  極低温環境下におけるSi-MOS界面散乱体の起源解明に向けた定量化手法の確立Principal Investigator

    • Principal Investigator
      岡 博史
    • Project Period (FY)
      2023 – 2024
    • Research Category
      Grant-in-Aid for Early-Career Scientists
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      National Institute of Advanced Industrial Science and Technology
  •  Fabrication of Direct Bandgap Group-IV Semiconductors by Utilizing Sn Alloying Technique Based on Rapid Melting Growth and Its Electrical CharacterizationPrincipal Investigator

    • Principal Investigator
      Oka Hiroshi
    • Project Period (FY)
      2019 – 2021
    • Research Category
      Grant-in-Aid for Early-Career Scientists
    • Review Section
      Basic Section 21050:Electric and electronic materials-related
    • Research Institution
      National Institute of Advanced Industrial Science and Technology
  •  高精度歪み制御による直接遷移型IV族混晶半導体の創出と発光特性評価Principal Investigator

    • Principal Investigator
      岡 博史
    • Project Period (FY)
      2018 – 2019
    • Research Category
      Grant-in-Aid for Research Activity Start-up
    • Review Section
      0302:Electrical and electronic engineering and related fields
    • Research Institution
      National Institute of Advanced Industrial Science and Technology

All 2021 2020 2019

All Journal Article Presentation

  • [Journal Article] Flash lamp annealing processing to improve the performance of high-Sn content GeSn n-MOSFETs2021

    • Author(s)
      Oka Hiroshi、Mizubayashi Wataru、Ishikawa Yuki、Uchida Noriyuki、Mori Takahiro、Endo Kazuhiko
    • Journal Title

      Applied Physics Express

      Volume: 14 Issue: 9 Pages: 096501-096501

    • DOI

      10.35848/1882-0786/ac1a47

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-19K15035
  • [Journal Article] Non-equilibrium solid-phase growth of amorphous GeSn layer on Ge-on-insulator wafer induced by flash lamp annealing2021

    • Author(s)
      Oka Hiroshi、Mizubayashi Wataru、Ishikawa Yuki、Uchida Noriyuki、Mori Takahiro、Endo Kazuhiko
    • Journal Title

      Applied Physics Express

      Volume: 14 Issue: 2 Pages: 025505-025505

    • DOI

      10.35848/1882-0786/abdac4

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-19K15035
  • [Presentation] Solid-phase Grown GeSn n-MOSFETs on GOI Wafer Fabricated by Flash Lamp Annealing2020

    • Author(s)
      H. Oka, W. Mizubayashi, T. Mori, Y. Ishikawa, T. Hosoi, T. Shimura, H. Watanabe, and K. Endo
    • Organizer
      第25回電子デバイス界面テクノロジー研究会
    • Data Source
      KAKENHI-PROJECT-19K15035
  • [Presentation] 近赤外イメージセンサーに向けた石英基板上裏面照射型GeSnフォトダイオードアレイの開発2019

    • Author(s)
      岡 博史, 井上 慶太郎, Thi Thuy Nguyen, 黒木 伸一郎, 細井 卓治, 志村 考功, 渡部 平司
    • Organizer
      電気化学会第86回大会
    • Invited
    • Data Source
      KAKENHI-PROJECT-18H05912
  • [Presentation] Tensile-strained GeSn-on-SOI MSM Photodetector Fabricated by Solid-phase Epitaxy2019

    • Author(s)
      H. Oka, W. Mizubayashi, T. Hosoi, T. Shimura, H. Watanabe, T. Maeda, N. Uchida, K. Endo
    • Organizer
      JST-MOST Joint Workshop on "Nanoelectronics and System Integration for AI"
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K15035
  • [Presentation] 固相エピタキシー法によるSOI基板上GeSn MSMダイオードの作製2019

    • Author(s)
      岡 博史, 水林 亘, 石川 由紀, 細井 卓治, 志村 考功, 渡部 平司, 前田 辰郎, 内田 紀行, 遠藤 和彦
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-18H05912

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