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Yoshimoto Masahiro  吉本 昌広

ORCIDConnect your ORCID iD *help
… Alternative Names

YOSHIMOTO Masahiro  吉本 昌広

TOSHIMOTO Masahiro  吉本 昌広

吉本 昌弘  ヨシモト マサヒロ

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Researcher Number 20210776
Other IDs
External Links
Affiliation (Current) 2022: 京都工芸繊維大学, その他部局等, 理事・副学長
Affiliation (based on the past Project Information) *help 2018: 京都工芸繊維大学, その他部局等, 理事・副学長
2016 – 2017: 京都工芸繊維大学, 電気電子工学系, 教授
2007 – 2014: Kyoto Institute of Technology, Graduate School of Science and Technology, Professor
2004 – 2006: 京都工芸繊維大学, 地域共同研究センター, 教授
2003: 京都工芸繊維大学, 工芸学部, 助教授 … More
1997 – 2000: Kyoto Inst.Tech., Faculty of Engneering & Design, Associate professor, 工芸学部, 助教授
1995 – 1996: Kyoto University, Graduate School of Engineering, Lecturer, 工学研究科, 講師
1988 – 1993: 京都大学, 工学部, 助手 Less
Review Section/Research Field
Principal Investigator
Applied materials science/Crystal engineering / Electronic materials/Electric materials / 電子材料工学 / 表面界面物性 / Crystal engineering
Except Principal Investigator
電子材料工学 / Applied materials / エネルギー学一般・原子力学 / Applied materials science/Crystal engineering / Applied materials science/Crystal engineering … More / Electronic materials/Electric materials / Applied physics, general / Physics / Applied optics/Quantum optical engineering / Electronic materials/Electric materials Less
Keywords
Principal Investigator
結晶成長 / 分子線エピタキシー / レーザダイオード / 窒化シリコン / シリコン / 半導体物性 / 光物性 / 超格子 / 電子・電気材料 / ビスマス … More / III-V族半導体 / 半金属 / 半金属半導体合金 / 有機金属分子線成長法 / 窒化ガリウム / 超高真空 / 可視発光材料 / 有機アミン / 高速反射電子線回析 / レーザ誘起反応 / 原子層エピタキシャル成長 / ガリウムリン / その場観測 / 反射高速電子線回折法 / 有機金属分子線エピタキシャル成長法 / 二次イオン質量分析法 / 表面反応 / 量子界面構造 / 直接光CVD法 / 選択光励起 / 時間分解質量分析法 / 界面電気特性 / MIS構造 / 半導体半金属混晶 / 発光波長温度無依存 / 多重量子井戸 / ホトルミネセンス / インジウムリン / レーザ / 局在準位 / 窒化インジウム / ヘテロ接合 / バンドオフセット / 光電子分光法 / 分子線ユピタキシー / 窒化イリジウム / indium nitride / heterojunction / silicon / crystal growth / band-offset / X-ray photoemission spectroscopy / silicon nitride / molecular beam epitaxy / 半導体 … More
Except Principal Investigator
シリコンカ-バイド / 広禁制帯幅半導体 / シリコンカーバイド / 原子層エピタキシ- / 太陽電池 / MOSFET / 表面超格子 / 複合プラズマ / ECRプラズマ / エチレンの分解 / マイクロ波放電 / プラズマの時定数 / プラズマの有効長 / シリコン / 格子整合 / 表面超構造 / 価電子制御 / silicon carbide / パワーデバイス / イオン注入 / 熱酸化 / pn接合ダイオード / 反射電子線回折法 / エピタキシャル成長 / 高効率太陽電池 / パルスプロセス / ホローカソード / 原子層エピタキシー / 青色発光ダイオード / 結晶成長 / ステップフロ-成長 / power device / step-flow growth / シリコンカーバイド(SiC) / Silicon Carbide / Thermal Oxidation / pn Junction Diode / Schottky Barrier Diode / photoluminescence / フォトルミネセンス / 原子層制御成長 / 自己制限機構 / 高速反射電子線回折法 / ヘテロ接合 / 電位井戸 / 薄膜太陽電池 / 非晶質シリコン / 光CVD / 極紫外光 / 局在準位密度 / 化学的気相堆積法 / 内部光電子放出法 / 一定生電流法 / 光化学反応 / 赤外吸収分光法 / 水素結合構造 / 活性種 / 発光中心 / ホロ-カソ-ド / 反射電子回線折法 / 局在中心 / ステップ制御エピタキシ- / メゾスコピック構造 / ガスソース分子線成長法 / しきい値イオン化質量分析法 / 有機金属気相成長法 / タンデム型太陽電池 / ヘテロエピタキシ- / メチルラジカル / ガスソース分子線 / ヘテロエピタキシャル成長 / 発光デバイス / 量子ドット / 信頼性 / 劣化 / 格子欠陥 / 転位 / 電子顕微鏡 / 長寿命化 / キャリア閉じ込め効果 / 電位障壁 / 表面再結合 / 窒化シリコン / 積層プラズマ / パワ-デバイス / 絶縁破壊電界 / 低温成長 / ポリタイプ制御 / 低温結晶成長 / breakdown field / low-temperature growth / polytype control / 気相エピタキシ- / 成長機構 / Schottky障壁ダイオード / 不純物ドーピング / Power Device / Vapor Phase Epitaxy / Growth Mechanism / 有機金属分子線エピタキシ- / 光励起反応 / 表面反応 / 光励起原子層エピタキシ- / その場観察 / 反射高速電子回折法 / ガリウムリン / 飽和吸着 / 反射高速電子線回折法 / 光励起プロセス / 質量分析 / 反射電子線回析 / III-V族半導体 / MOMBE / Photo-chemical reaction / Surface reaction / Photo-induced ALE / In-situ observation / RHEED / GaP / Saturated adsorption / Schottkyダイオード / Power Device- / Ion Implantation / 極微領域ホトルミネセンス像 / 極低温測定 / 極微領域電子構造 / レーザー顕微鏡 / 半導体極微構造 / ピエゾアクチュエータ / 半導体特性マッピング / high spatial resolution / low temperature / confocal microscope / electronic structure / piezo actuator / photoluminescence image / nano structure / 深い準位 / 不純物ド-ピング / pn diode / ion implantation / thermal oxidation / 光インターコネクト / 集積光学 / 光導波路 / グレーティングカップラ / 光アドドロップ / 干渉露光 / 窒化シリコン膜 / 回路シミュレーション / 光電子集積回路 / 屈折率制御 / 回折光学 / 光集積回路 / 波長多重 / optical interconnects / integrated optics / optical waveguides / grating couplers / optical add-drop multiplexing / interference exposure system / silicon nitride / circuit simulation / 半導体レーザ / 温度無依存波長 / GaNAsBi混晶 / 分子線エピタキシャル法 / 波長多重光通信 / 波長多重通信 / GaNABi結晶 / Semiconductor Laser / Temnerature-insensitive / GaNAsBi Alloy / Molecular Beam Enitaxy / Waveleneth Division Multinlexing / アモルファス半導体 / 異種接合 / ホットエレクトロン / トンネル伝導 / アモルファスシリコン / アモルファスシリコンカ-ボン / 超構造 / 超格子 / 熱電子放出伝導 / アモルファスシリコンカーボン / キャリア輸送過程 / 膜内水素 / 光電子分光法 / amorphous semiconductor / heterojunction / hot-electron / tunneling conduction / amorphous silicon / amorphous silicon carbon / superstructure / 青色発光ダイオ-ド / ド-ピング / 等電子トラップ / 原子ステップ制御エピタキシ- / 注入効率 / 気相エピタキシャル法 / 原子ステップ制御 / blue LED / doping / isoelectronic trap Less
  • Research Projects

    (35 results)
  • Research Products

    (195 results)
  • Co-Researchers

    (27 People)
  •  Fabrication of bismuth-containing narrow-bandgap semimetal-semiconductor alloys and their application to photonic devicesPrincipal Investigator

    • Principal Investigator
      Yoshimoto Masahiro
    • Project Period (FY)
      2016 – 2018
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Crystal engineering
    • Research Institution
      Kyoto Institute of Technology
  •  GaAsBi laser diodes with low temperature dependence of lasing wavelengthPrincipal Investigator

    • Principal Investigator
      MASAHIRO Yoshimoto
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kyoto Institute of Technology
  •  Study of Optical Irradiation on Nobel Materials and Quantum DotStructures for Next Generation Optical Devices

    • Principal Investigator
      UEDA Osamu
    • Project Period (FY)
      2010 – 2012
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kanazawa Institute of Technology
  •  Bi-containing III-V semiconductor super lattices for laser diodes with temperature-insensitive laser oscillation wavelengthPrincipal Investigator

    • Principal Investigator
      YOSHIMOTO Masahiro
    • Project Period (FY)
      2009 – 2011
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kyoto Institute of Technology
  •  Growth of diluted bismide III-V semimetal semiconductor alloy GaInAsBi and control of its physical propertiesPrincipal Investigator

    • Principal Investigator
      YOSHIMOTO Masahiro
    • Project Period (FY)
      2007 – 2008
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kyoto Institute of Technology
  •  Research on GaInAAs semiconductor alloy for temperature-insensitive wavelength semiconductor lasers

    • Principal Investigator
      OE Kunishige
    • Project Period (FY)
      2005 – 2007
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Kyoto Institute of Technology
  •  Basic research on intra-board broad-band optical interconnects for high-performance system integration

    • Principal Investigator
      URA Shogo
    • Project Period (FY)
      2003 – 2005
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied optics/Quantum optical engineering
    • Research Institution
      Kyoto Institute of Technology
  •  Fabrication of III-V semiconductor/Si heterojunctions without disturbance of inter-diffusion toward high frequency devicesPrincipal Investigator

    • Principal Investigator
      YOSHIMOTO Masahiro
    • Project Period (FY)
      1999 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Kyoto Institute of Technology
  •  Control of Electronic Properties of Wide Bandgap Semiconductor and Application to Energy Electronics

    • Principal Investigator
      MATSUNAMI Hiroyuki
    • Project Period (FY)
      1997 – 2000
    • Research Category
      Grant-in-Aid for Specially Promoted Research
    • Review Section
      Physics
    • Research Institution
      KYOTO UNIVERSITY
  •  Topographic analyzer for electronic structures of semiconductorsPrincipal Investigator

    • Principal Investigator
      SARAIE Junji, 吉本 昌広
    • Project Period (FY)
      1996 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied physics, general
    • Research Institution
      KYOTO INSTITUTE OF TECHNOLOGY
      Kyoto University
  •  表面超構造制御原子層エピタキシ-のためのフリーラジカルの作製

    • Principal Investigator
      松波 弘之
    • Project Period (FY)
      1995
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto University
  •  原料ガスの選択光励起による高品質窒化シリコンの推積と量子界面構造の形成Principal Investigator

    • Principal Investigator
      吉本 昌広
    • Project Period (FY)
      1995
    • Research Category
      Grant-in-Aid for Encouragement of Young Scientists (A)
    • Research Field
      表面界面物性
    • Research Institution
      Kyoto University
  •  広禁制帯幅半導体との複合による極限高効率シリコン太陽電池の開発

    • Principal Investigator
      冬木 隆
    • Project Period (FY)
      1994 – 1995
    • Research Category
      Grant-in-Aid for Developmental Scientific Research (B)
    • Research Field
      エネルギー学一般・原子力学
    • Research Institution
      Kyoto University
  •  Microscopic analysis on surface reaction induced by laser irradiation and its application to atomic layr epitaxy

    • Principal Investigator
      MATSUNAMI Hiroyuki
    • Project Period (FY)
      1994 – 1995
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      KYOTO UNIVERSITY
  •  Application of Wide Bandgap Semiconductor SiC for Power Devices

    • Principal Investigator
      MATSUNAMI Hiroyuki
    • Project Period (FY)
      1994 – 1995
    • Research Category
      Grant-in-Aid for Developmental Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      KYOTO UNIVERSITY
  •  表面超構造制御原子層エピタキシーのためのフリーラジカルの作製

    • Principal Investigator
      松波 弘之
    • Project Period (FY)
      1993
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto University
  •  レーザ誘起原子層エピタキシーによる純正III-V族半導体結晶の製作Principal Investigator

    • Principal Investigator
      吉本 昌広
    • Project Period (FY)
      1993
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Kyoto University
  •  格子整合系複合材料を用いたシリコン太陽電池の極限高効率化

    • Principal Investigator
      冬木 隆
    • Project Period (FY)
      1992
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto University
  •  表面制御原子層エピタキシー法によるSiC純正結晶の製作と光物性制御

    • Principal Investigator
      冬木 隆
    • Project Period (FY)
      1992
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto University
  •  有機金属分子線成長法による光素子用ワイドギヤップ材料窒化ガリウムの純正結晶の製作Principal Investigator

    • Principal Investigator
      吉本 昌広
    • Project Period (FY)
      1992
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      電子材料工学
    • Research Institution
      Kyoto University
  •  Crystal Growth of Widegap Semiconductor SiC with High-Purity and Application to Power Devices

    • Principal Investigator
      MATSUNAMI Hiroyuki
    • Project Period (FY)
      1992 – 1993
    • Research Category
      Grant-in-Aid for Developmental Scientific Research (B)
    • Research Field
      電子材料工学
    • Research Institution
      KYOTO UNIVERSITY
  •  格子整合系複合材料を用いたシリコン太陽電池の極限高効率化

    • Principal Investigator
      冬木 隆
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto University
  •  表面制御原子層エピタキシ-法によるSiC純正結晶の製作と光物性制御

    • Principal Investigator
      冬木 隆
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto University
  •  格子整合系複合材料を用いたシリコン太陽電池の極限高効率化

    • Principal Investigator
      冬木 隆
    • Project Period (FY)
      1990
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto University
  •  表面制御エピタキシ-法によるSiC純正結晶の製作と光物性制御

    • Principal Investigator
      冬木 隆
    • Project Period (FY)
      1990
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto University
  •  複合プラズマの生成と反応の制御

    • Principal Investigator
      板谷 良平
    • Project Period (FY)
      1990
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto University
  •  Crystal Growth of High-Quality SiC by Step-Controlled Epitaxy and its Application for Power Devices

    • Principal Investigator
      MATSUNAMI Hiroyuki
    • Project Period (FY)
      1990 – 1991
    • Research Category
      Grant-in-Aid for Developmental Scientific Research (B)
    • Research Field
      電子材料工学
    • Research Institution
      Kyoto University
  •  表面超格子を用いた単結晶シリコンカ-バイドの原子層制御エピタキシ-

    • Principal Investigator
      FUYUKI Takashi
    • Project Period (FY)
      1989 – 1990
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Applied materials
    • Research Institution
      Kyoto University
  •  キャリヤ閉じ込め効果を用いた新構造超薄型高効率太陽電池の開発

    • Principal Investigator
      松波 弘之
    • Project Period (FY)
      1989
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto University
  •  複合プラズマの生成と反応の制御

    • Principal Investigator
      板谷 良平
    • Project Period (FY)
      1989 – 1990
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto University
  •  極紫外域高エネルギ-光子を用いた安定構造非晶質シリコン系薄膜の形成

    • Principal Investigator
      冬木 隆
    • Project Period (FY)
      1989 – 1990
    • Research Category
      Grant-in-Aid for Developmental Scientific Research (B)
    • Research Field
      電子材料工学
    • Research Institution
      Kyoto University
  •  キャリア閉じ込め効果を用いた新構造高効率太陽電池の最適化

    • Principal Investigator
      松波 弘之
    • Project Period (FY)
      1988
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto University
  •  複合プラズマの生成と反応の制御

    • Principal Investigator
      板谷 良平
    • Project Period (FY)
      1988
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto University
  •  Carrier dynamics in amorphous semiconductor superstructures

    • Principal Investigator
      MATSUNAMI Hiroyuki
    • Project Period (FY)
      1988 – 1989
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      Applied materials
    • Research Institution
      Kyoto University
  •  Development of SiC Blue Light-Emitting Diodes Utilizing Step-Controlled Epitaxy

    • Principal Investigator
      MATSUNAMI Hiroyuki
    • Project Period (FY)
      1988 – 1989
    • Research Category
      Grant-in-Aid for Developmental Scientific Research
    • Research Field
      電子材料工学
    • Research Institution
      Kyoto University

All 2020 2019 2018 2017 2016 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 Other

All Journal Article Presentation Book Patent

  • [Book] Molecular Beam Epitaxy: Materials and Device Applications2020

    • Author(s)
      Masahiro Yoshimoto(分担執筆) (Hajime Asahi, Yoshiji Horikoshi編)
    • Total Pages
      354
    • Publisher
      Wiley
    • ISBN
      9781119355014
    • Data Source
      KAKENHI-PROJECT-16H02105
  • [Book] Bismuth-Containing Alloys and Nanostructures2019

    • Author(s)
      Pallavi Kisan Patil1, Satoshi Shimomura, Fumitaro Ishikawa, Esperanza Luna and Masahiro Yoshimoto (分担執筆)Shumin Wang, Pengfei Lu(編集)
    • Total Pages
      471
    • Publisher
      Springer
    • ISBN
      9789811380785
    • Data Source
      KAKENHI-PROJECT-16H02105
  • [Book] Molecular Beam Epitaxy 2nd Edition From Research to Mass Production2018

    • Author(s)
      Masahiro Yoshimoto, Kunishige Oe (分担執筆) Mohamed Henini(編集)
    • Total Pages
      788
    • Publisher
      Elsevier
    • ISBN
      9780128121368
    • Data Source
      KAKENHI-PROJECT-16H02105
  • [Book] Bismuth-Containing Compounds2013

    • Author(s)
      Masahiro Yoshimoto, Takuma Fuyuki
    • Total Pages
      23
    • Publisher
      Springer
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Book] Molecular beam epitaxy of GaAsBi and related quaternary alloys" Chapter 8 in "Molecular Beam Epitaxy: From research to mass production"2012

    • Author(s)
      Masahiro Yoshimoto, Kunishige Oe
    • Total Pages
      12
    • Publisher
      Elsevier Inc.
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Book] Molecular beam epitaxy of GaAs and related quaternary alloys Molecular Beam Epitaxy : From Quantum Wells to Quantum Dots ; From Research to Mass Production

    • Author(s)
      M. Yoshimoto and K. Oe
    • Publisher
      Elsevier(印刷中)
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Journal Article] PEDOT:PSS/GaAs<sub>1−<i>x</i> </sub>Bi<i> <sub>x</sub> </i> organic–inorganic solar cells2019

    • Author(s)
      Hasegawa Sho、Kakuyama Kyohei、NISHINAKA Hiroyuki、YOSHIMOTO Masahiro
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 印刷中 Issue: 6 Pages: 060907-060907

    • DOI

      10.7567/1347-4065/ab1e97

    • NAID

      210000155900

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H02105
  • [Journal Article] Electrically pumped room-temperature operation of GaAs<sub>1−</sub><i><sub>x</sub></i>Bi<i><sub>x</sub></i>laser diodes with low-temperature dependence of oscillation wavelength2014

    • Author(s)
      T. Fuyuki, K. Yoshida, R. Yoshioka, M. Yoshimoto
    • Journal Title

      Applied Physics Express

      Volume: 7 Issue: 8 Pages: 082101-082101

    • DOI

      10.7567/apex.7.082101

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Journal Article] Long-wavelength emission in photo-pumped GaAs1-xBix laser with low temperature dependence of lasing wavelength2013

    • Author(s)
      Takuma Fuyuki, Ryo Yoshi oka, Kenji Yoshida and Masahiro Yoshimoto
    • Journal Title

      Applied Physics Letters

      Volume: 103

    • DOI

      10.1063/1.4830273

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-12J09525, KAKENHI-PROJECT-24246008
  • [Journal Article] Quantitative estimation of density of Bi-induced localized states in GaAs1-xBix grown by molecular beam epitaxy2013

    • Author(s)
      Masahiro Yoshimoto, Mizuki Itoh, Yoriko Tominaga, and Kunishige Oe
    • Journal Title

      J. Cryst. Growth

      Volume: available online

    • DOI

      10.1016/j.jcrysgro.2012.12.157

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Journal Article] GaAs1-xBixおよびGaAs/GaAs1-xBixヘテロ界面における局在準位2013

    • Author(s)
      冬木琢真、伊藤瑞記、角 浩輔、吉本昌広
    • Journal Title

      材料

      Volume: 62 Pages: 672-678

    • NAID

      130003384103

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Journal Article] Study of the Deep Levels of a GaAs/p-GaAs1-xBix Heterostructure Grown by Molecular Beam Epitaxy2012

    • Author(s)
      T. Fuyuki, S. Kashiyama, K. Oe, M. Yoshimoto
    • Journal Title

      MRS Proceedings

      Volume: 1432 Pages: 27-32

    • DOI

      10.1557/opl.2012.904

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-12J09525, KAKENHI-PROJECT-24246008
  • [Journal Article] High Hole Mobility in GaAs_<1-x>Bi_x Alloys2012

    • Author(s)
      K. Kado, T. Fuyuki, K. Yamada, K. Oe, and M. Yoshimoto
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: Vol.51 Issue: 4R Pages: 040204-040204

    • DOI

      10.1143/jjap.51.040204

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Journal Article] Interface State in p-Type GaAs/GaAs1-xBix Heterostructure2012

    • Author(s)
      T. Fuyuki. S. Kashiyama, K. Oe, M. Yoshimoto
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 51 Issue: 11S Pages: 11PC02-11PC02

    • DOI

      10.1143/jjap.51.11pc02

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-12J09525, KAKENHI-PROJECT-24246008
  • [Journal Article] Photo-pumped GaAs_<1-x> Bi_xlasing operation with low-temperature-dependent oscillation wavelength2012

    • Author(s)
      Yoriko Tominaga, Kunishige Oe, Masahiro Yoshimoto
    • Journal Title

      Proceedings of the SPIE

      Volume: 8277

    • DOI

      10.1117/12.907098

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-09J09138, KAKENHI-PROJECT-21360008
  • [Journal Article] Study of deep levels of GaAs/p-GaAs_<1-x> Bi_x heterostructure grown by molecular beam epitaxy2012

    • Author(s)
      T. Fuyuki, S. Kashiyama, K. Oe, M. Yoshimoto
    • Journal Title

      Materials Research Society Proceedings, Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II

      Volume: (印刷中)

    • URL

      http://www.mrs.org/

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Journal Article] Structural evaluation of GaAs_<1-x>Bi_x mixed crystals by TEM2012

    • Author(s)
      O.Ueda, Y.Tominaga, N.Ikenaga, M.Yoshimoto, K.Oe
    • Journal Title

      Proceedings of Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials

      Pages: 1-4

    • Data Source
      KAKENHI-PROJECT-21360008
  • [Journal Article] Structural evaluation of GaAs_<1-x> Bi_x mixed crystals by TEM, Proceedings of Compound Semiconductor Week(CSW/IPRM)2012

    • Author(s)
      O. Ueda, Y. Tominaga, N. Ikenaga, M. Yoshimoto, K. Oe
    • Journal Title

      2011 and 23rd International Conference on Indium Phosphide and Related Materials

      Pages: 1-4

    • URL

      http://www.ieee.org/INSPECAccessionNumber:12172587

    • Data Source
      KAKENHI-PROJECT-21360008
  • [Journal Article] Deep-hole traps in p-Type GaAs_<1-x> Bi_x grown by molecular beam epitaxy2011

    • Author(s)
      Takuma Fuyuki, Shota Kashiyama, Yoriko Tominaga, Kunishige Oe, Masahiro Yoshimoto
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 50 Issue: 8R Pages: 080203-080203

    • DOI

      10.1143/jjap.50.080203

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-09J09138, KAKENHI-PROJECT-21360008
  • [Journal Article] Temperature-insensitive photoluminescence emission wavelength in GaAs_<1-x>Bi_x/GaAs multiquantum wells2011

    • Author(s)
      Y.Tominaga, K.Oe, M.Yoshimoto
    • Journal Title

      physica status solidi (c)

      Volume: 8 Pages: 260-262

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Journal Article] Structural evaluation of GaAs_<1-x>Bi_<x> mixed crystals by TEM2011

    • Author(s)
      Osamu Ueda, Yoriko Tominaga, Noriaki Ikenaga, Masahiro Yoshimoto, Kunishige Oe
    • Journal Title

      Extended Abstract of International Conference on InP and Related Material (IPRM 2011)

      Volume: IPRM 2011 Pages: 248-251

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22560012
  • [Journal Article] TEM evaluation of MBE-grown GaAs_<1-x>Bi_<x> crystals2011

    • Author(s)
      Osamu Ueda, Yoriko Tominaga, Noriaki Ikenaga, Masahiro Yoshimoto, Kunishige Oe
    • Journal Title

      Extended Abstract of 30^<th> Electronic Materials Symposium (EMS-30)

      Volume: EMS-30 Pages: 155-156

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22560012
  • [Journal Article] TEM observation of MBE-grown GaAs1-xBix crystals2011

    • Author(s)
      Osamu Ueda, Yoriko Tominaga, NoriakiIkenaga, Masahiro Yoshimoto, and Kunishige Oe
    • Journal Title

      Extended Abstract of 30th Electronic Materials Symposium

      Volume: EMS-30 Pages: 155-156

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22560012
  • [Journal Article] Temperature-insensitive photoluminescence emission wavelength in GaAs_<1-x> Bi_x/GaAs multiquantum wells2011

    • Author(s)
      Y. Tominaga, K. Oe and M. Yoshimoto
    • Journal Title

      physica status solidi(c)

      Volume: Vol.8 Pages: 260-262

    • DOI

      10.1002/pssc.201000520

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Journal Article] Structural evaluationof GaAs1-xBix mixed crystals by TEM, Extended Abstract of International2011

    • Author(s)
      Osamu Ueda, Yoriko Tominaga, Noriaki Ikenaga, Masahiro Yoshimoto, and Kunishige Oe
    • Journal Title

      Conference on InP and Related Materials (IPRM2011)

      Volume: IPRM2011 Pages: 248-251

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22560012
  • [Journal Article] Low Temperature Dependence of Oscillation Wavelength in GaAs_<1-x>Bi_x Laser by Photo-Pumping2010

    • Author(s)
      T.Fuyuki, Y.Tominaga, K.Oe, M.Yoshimoto
    • Journal Title

      Applied Physics Express

      Volume: 2

    • NAID

      10027015196

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Journal Article] Low Temperature Dependence of Oscillation Wavelength in GaAs<sub>1-<i>x</i></sub>Bi<sub><i>x</i></sub>Laser by Photo-Pumping2010

    • Author(s)
      Y. Tominaga, K. Oe and M. Yoshimoto
    • Journal Title

      Applied Physics Express

      Volume: Vol.3 Issue: 6 Pages: 062201-062201

    • DOI

      10.1143/apex.3.062201

    • NAID

      10027015196

    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Journal Article] Growth of GaAs<sub>1-x</sub>Bi<sub>x</sub>/Al<sub>y</sub>Ga<sub>1-y</sub>As Multi-Quantum-Well Structures2010

    • Author(s)
      T. Fuyuki, Y. Tominaga, K. Oe and M. Yoshimoto
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: Vol.49 Issue: 7R Pages: 070211-070211

    • DOI

      10.1143/jjap.49.070211

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Journal Article] Growth of GaAs_<1-x>Bi_x/AlyGa_<1-y>As Multi-Quantum-Well structures2010

    • Author(s)
      T.Fuyuki, Y.Tominaga, K.Oe, M.Yoshimoto
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 49

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Journal Article] Growth of GaAs_<1-x>Bi_x/GaAs multi-quantumwells by molecular beam epitaxy, phys2008

    • Author(s)
      Yoriko Tominaga, Yusuke Kinoshita,Gan Feng, Kunishige Oe, Masahiro Yoshimoto
    • Journal Title

      stat.sol.(c) 5

      Pages: 2719-2721

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Journal Article] Structural investigation of GaAs_<1-x>Bi_x/GaAsmultiquantum wells, App12008

    • Author(s)
      Yoriko Tominaga, Yusuke Kinoshita, Kunishige Oe, Masahiro Yoshimoto
    • Journal Title

      Phys. Lett 93

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Journal Article] Structural investigation of GaAs1-xBix/GaAs multiquantum wells2008

    • Author(s)
      Y. Tominaga, Y. Kinoshita, K. Oe, M. Yoshimoto
    • Journal Title

      Appl. Phys. Lett. 93

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Journal Article] Growth of GaAs_<1-x>Bi_x/GaAs multi-quantum wells by molecular beam epitaxy2008

    • Author(s)
      Y. Tominaga, Y. Kinoshita, G. Fene. K. Oe, M. Yoshimoto
    • Journal Title

      phys. stat. sol. (c) 5

      Pages: 2719-2721

    • NAID

      10025650132

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Journal Article] Annealing effects of diluted GaAs nitrideand bismide on photoluminescence2007

    • Author(s)
      Masahiro Yoshimoto, Gan Feng, Kunishige Oe
    • Journal Title

      ECS Transaction 6

      Pages: 45-51

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Journal Article] Molecular-beam epitaxy of GaNAsBi layer for temperature-insensitive wavelength emission2007

    • Author(s)
      M. Yoshimoto,.,
    • Journal Title

      Journal of Crystal Growth 301-302

      Pages: 975-978

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Molecular-beam epitaxy of GaNAsBi layer for temperature-insensitive wavelength emission2007

    • Author(s)
      M., Yoshimoto, W., Huang, G., Feng, Y., Tanaka, K., Oe
    • Journal Title

      Journal of Crystal Growth(SPEC. ISS.) 301-302

      Pages: 975-978

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Influence of thermal annealing treatment on the luminescence properties of dilute GaNAs-bismide alloy2007

    • Author(s)
      G., Feng, K., Oe, M., Yoshimoto
    • Journal Title

      Jpn. Appl. Phys., Part 2 46(29-32)

    • NAID

      40015553279

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Temperature dependence of Bi behavior in MBE growth of InGaAs/InP2007

    • Author(s)
      G., Feng, K., Oe, M., Yoshimoto
    • Journal Title

      Journal of Crystal Growth(SPEC. ISS.) 301-302

      Pages: 121-124

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Molecular-beam epitaxy of GaNAsBi layer for temperature-insensitive wavelength emission2007

    • Author(s)
      M. Yoshimoto, et. al.
    • Journal Title

      Journal of Crystal Growth 301-302

      Pages: 975-978

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Annealing effects of diluted GaAs nitride and bismide on photoluminescence2007

    • Author(s)
      M., Yoshimoto, G., Feng, K., Oe
    • Journal Title

      ECS Transaction 6

      Pages: 45-51

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Annealing effects of diluted GaAs nitride and bismide on photoluminescence2007

    • Author(s)
      Masahiro Yoshimoto, Gan Feng, Kunishige Oe
    • Journal Title

      ECS Transaction 6

      Pages: 45-51

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Journal Article] Lattice Distortion of GaAsBi Alloy Grown on GaAs by Molecular Beam Epitaxy2006

    • Author(s)
      Y., Takehara, M., Yoshimoto, W., Huang, J., Saraie, K., Oe, A., Chayahara, Y., Horino
    • Journal Title

      Jpn. J. Appl. Phys., Part 1 Vol.45

      Pages: 67-69

    • NAID

      40007102777

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Lattice Distortion of GaAsBi Alloy Grown on GaAs by Molecular Beam Epitaxy2006

    • Author(s)
      Y.Takehara, M.Yoshimoto, W.Huang, J.Saraie, K.Oe, et al.
    • Journal Title

      Jpn J.Appl.Phys Part 1, Vol.45

      Pages: 67-69

    • NAID

      40007102777

    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Temperature-Insensitive Wavelength Emission and Absorption Characteristics of GaNAsBi/GaAs DH Diodes2006

    • Author(s)
      K., Oe, Y., Tanaka, W., Huang, G., Feng, K., Yamashita, M., Yoshimoto, Y., Kondo, S., Tsuji
    • Journal Title

      Proc. 32nd European Conference on Optical Communication, Sep. 2006, Cannes, France We3

      Pages: 39-39

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Temperature-Insensitive Wavelength Emission and Absorption Characteristics of GaNAsBi/GaAs DH Diodes2006

    • Author(s)
      K.Oe, Y.Tanaka, W.Huang, G.Feng, K.Yamashita, M.Yoshimoto, Y.Kondo, S.Tsuji
    • Journal Title

      32nd European Conference on Optical Communication Cannes, France

    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Temperature-insensitive refractive index of GaAsBi alloy for laser diode in WDM optical communication2006

    • Author(s)
      K.Yamashita, M.Yoshimoto, K, Oe
    • Journal Title

      phys. stat. solidi (c)3

      Pages: 693-696

    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Molecular Beam Epitaxy of GaNAsBi Layer for Temperature-insensitive Wavelength Emission2006

    • Author(s)
      M.Yoshimoto, W.Huang, G.Feng, Y.Tanaka, K.Oe
    • Journal Title

      14^<th> International Conference on Molecular Beam Epitaxy Tokyo, Japan

    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] New semiconductor alloy GaNAsBi with temperature-insensitive bandgap2006

    • Author(s)
      M.Yoshimoto, W.Huang, G.Feng, K.Oe
    • Journal Title

      phys. stat. solidi (b)243

      Pages: 1421-1425

    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Temperature-insensitive refractive index of GaAsBi alloy for laser diode in WDM optical communication2006

    • Author(s)
      K.Yamashita, M.Yoshimoto, K.Oe
    • Journal Title

      phys.stat.sol. (c)3

      Pages: 693-696

    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Temperature dependence of Bi behaviors in MBE growth of InGaAs2006

    • Author(s)
      G.Feng, K.Oe, M.Yoshimoto
    • Journal Title

      14^<th> International Conference on Molecular Beam Epitaxy Tokyo, Japan

    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Temperature-Insensitive Wavelength Electroluminescent Emission from GaNAsBi/GaAs DH Diodes2006

    • Author(s)
      K.Oe, Y.Tanaka, W.Huang, G.Feng, K.Yamashita, M.Yoshimoto, Y.Kondo
    • Journal Title

      Northern Optics 2006 Bergen, Norway

    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Temperature-insensitive refractive index of GaAsBi alloy for laser diode in WDM optical communication2006

    • Author(s)
      K., Yamashita, M., Yoshimoto, K., Oe
    • Journal Title

      phys. stat. sol (c)3

      Pages: 693-696

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Bi containing III-V quatemary alloy InGaAsBi grown by MBE2006

    • Author(s)
      G., Feng, K., Oe, M., Yoshimoto
    • Journal Title

      phys. stat. sol (a)203 No.11

      Pages: 2670-2673

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] New semiconductor alloy GaNAsBi with temperature- insensitive bandgap2006

    • Author(s)
      M., Yoshimoto, W., Huang, G., Feng, K., Oe
    • Journal Title

      Physica Status Solidi (b)243(7)

      Pages: 1421-1425

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] GaNyAsl-x-yBix Semiconductor Alloy for Temperature-insensitive-wavelength Lasers in WDM Optical Communication2005

    • Author(s)
      K.Oe, W.Huang, G.Feng, M.Yoshimoto.
    • Journal Title

      18th Annual Meeting IEEE Lasers & Electro-Optics Society (LEOS'05), Sydney, Australia 23-27 October

    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] New III-V semiconductor InGaAsBi alloy grown by molecular beam epitaxy2005

    • Author(s)
      G.Feng, M.Yoshimoto, K.Oe, A.Chayahara, Y.Horino
    • Journal Title

      Jpn J.Appl.Phys Vol.44

    • NAID

      130004533539

    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Temperature-insensitive refractive index of GaAsBi alloy for laser diode in WDM optical communication2005

    • Author(s)
      K.Yamashita, M.Yoshimoto, K.Oe
    • Journal Title

      32nd International Symposium on Compound Semiconductors (ISCS-2005)、 Rust, Germany September 18-22

    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Molecular-beam epitaxy and characteristics of GaNyAsl-x-yBix2005

    • Author(s)
      W.Huang, K.Oe, G.Feng, M.Yoshimoto
    • Journal Title

      J.Appl.Phys. Vol.98

    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] GaNAsBi Semiconductor Alloy with Temperature-Insensitive Bandgap (INVITED TALK)2005

    • Author(s)
      M.Yoshimoto, W.Huang, G.Feng, K.Oe;
    • Journal Title

      Materials Research Society 2005 Fall Meeting, Boston, USA, Nov.28 Dec.1

    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Radical Beam Deposition of Silicon Nitride towards Passivation for Organic Devices2005

    • Author(s)
      Kohshi Taguchi, Masamichi Yamashita, Mitsuo Yamazaki, Akiyoshi Chayahara, Yuji Horino, Takashi Iwade, Masahiro Yoshimoto
    • Journal Title

      2005 Materials Research Society Fall Meeting, Symposium D : Organic and Nanostructured Composite Photovoltaics and Solid-State Lighting, Boston, November 27 - December 2

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206008
  • [Journal Article] MBE-grown GaNAsBi- matched to GaAs with 1.3-um emission wavelength2005

    • Author(s)
      M., Yoshimoto, W., Huang, J., Saraie, K., Oe
    • Journal Title

      Mat. Res. Soc. Symp. Proc Proc.829

      Pages: 523-528

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] New III-V semiconductor InGaAsBi alloy grown by molecular beam epitaxy2005

    • Author(s)
      G., Feng, M., Yoshimoto, K., Oe, A., Chayahara, Y., Horino
    • Journal Title

      Jpn J. Appl. Phys Vol.44

    • NAID

      130004533539

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] New semiconductor alloy GaNAsBi with temperature insensitive bandgap2005

    • Author(s)
      M.Yoshimoto, W.Huang, G.Feng, K.Oe
    • Journal Title

      International Conference on Nitride Semiconductors, Bremen, Germany August28-September 2

    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Molecular-beam epitaxy and characteristics of GaNyAsl-x-yBix2005

    • Author(s)
      W., Huang, K., Oe, G., Feng, M., Yoshimoto
    • Journal Title

      J. Appl. Phys Vol.98

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Journal Article] Radical Beam Deposition of Silicon Nitride towards Passivation for Organic Devices2005

    • Author(s)
      K.Taguchi, M.Yamashita, M.Yamazaki, A.Chayahara, Y.Horino, T.Iwade, M.Yoshimoto
    • Journal Title

      2005 Materials Research Society Fall Meeting, Symposium D : Organic and Nanostructured Composite Photovoltaics and Solid-State Lighting, Boston, November 27-December 2

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206008
  • [Journal Article] 有機液体原料を用いたラジカルビーム堆積法による低炭素濃度シリコン窒化膜の堆積2004

    • Author(s)
      田口貢士, 吉本昌広, 更家淳司
    • Journal Title

      材料 53

      Pages: 1318-1322

    • NAID

      110006266191

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206008
  • [Journal Article] Dense Structure of SiN_x films fabricated by radical beam deposition method using hexamethyldisilazane2004

    • Author(s)
      K.Taguchi, M.Yoshimoto, J.Saraie
    • Journal Title

      Jpn.J.Appl.Phys. 43

    • NAID

      10013787251

    • Data Source
      KAKENHI-PROJECT-15206008
  • [Journal Article] Reduction of carbon impurity in silicon nitride films deposited from metalorganic source2004

    • Author(s)
      K.Taguchi, M.Yoshimoto, J.Saraie
    • Journal Title

      Japanese Journal of Applied Physics 43

    • NAID

      10012038860

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206008
  • [Journal Article] Dense Structure of SiN_X films fabricated by radical beam deposition method using hexamethyldisilazane2004

    • Author(s)
      K.Taguchi, M.Yoshimoto, J.Saraie
    • Journal Title

      Jpn.J.Appl.Phys 43

    • NAID

      10013787251

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206008
  • [Journal Article] Potential of SiN_X films fabricated by radical-beam deposition technique for passivation of organic devices2004

    • Author(s)
      T.Yamao, K.Taguchi, M.Yoshimoto, S.Fujita
    • Journal Title

      Extended Abstracts 23rd Electronic Materials Sympo.

      Pages: 53-54

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206008
  • [Journal Article] Potential of SiN_x films fabricated by radical-beam deposition technique for passivation of organic devices2004

    • Author(s)
      T.Yamao, K.Taguchi, M.Yoshimoto, S.Fujita
    • Journal Title

      Extended Abstracts 23rd Electronic Materials Sympo., Izu-Nagaoka

      Pages: 53-54

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206008
  • [Journal Article] Dense Structure of SiN_x films fabricated by radical beam deposition method using hexamethyldisilazane2004

    • Author(s)
      K.Taguchi, M.Yoshimoto, J.Saraie
    • Journal Title

      Jpn.J.Appl.Phys. 43, No11A

    • NAID

      10013787251

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206008
  • [Journal Article] Reduction of carbon impurity in silicon nitride films deposited from metalorganic source2004

    • Author(s)
      Kohshi Taguchi, Masahiro Yoshimoto, Junji Saraie
    • Journal Title

      Jpn.J.Appl.Phys. 43, No.2A

    • NAID

      10012038860

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206008
  • [Journal Article] Silicon nitride with low carbon concentration deposited by radical beam deposition technique with organic liquid sources (in Japanese)2004

    • Author(s)
      K.Taguchi, M.Yoshimoto, J.Saraie
    • Journal Title

      J.Soc.Mat.Sci., Japan Vo.53, No.12

      Pages: 1318-1322

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206008
  • [Patent] 半導体材料、基体、基体の製造方法および半導体レーザ2016

    • Inventor(s)
      西中浩之、吉本昌広、来馬英樹、芝田 悠将
    • Industrial Property Rights Holder
      西中浩之、吉本昌広、来馬英樹、芝田 悠将
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2016-142023
    • Filing Date
      2016-07-20
    • Data Source
      KAKENHI-PROJECT-16H02105
  • [Presentation] Growth temperature dependence of GaAsBi tail states probed by sub-band absorption and photoluminescence characteristics2019

    • Author(s)
      Sho Hasegawa, Kyohei Kakuyama, Hiroyuki Nishinaka and Masahiro Yoshimoto
    • Organizer
      10th International Workshop on Bismuth-Containing Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02105
  • [Presentation] PEDOT:PSS/GaAsBi太陽電池の製作と評価2018

    • Author(s)
      長谷川将,岳山恭平,西中浩之,吉本昌広
    • Organizer
      日本材料学会半導体エレクトロニクス部門委員会平成30年度第1回研究会
    • Data Source
      KAKENHI-PROJECT-16H02105
  • [Presentation] Fabrication of PEDOT:PSS/GaAs1-xBix solar cells2018

    • Author(s)
      ho Hasegawa, Kyohei Kakuyama, Pallavi Patil, Hiroyuki Nishinaka and Masahiro Yoshimoto
    • Organizer
      9th International Workshop on Bismuth-Containing Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02105
  • [Presentation] PEDOT:PSS/GaAs1-xBix;有機無機ハイブリッド太陽電池の製作2018

    • Author(s)
      長谷川 将, 岳山恭平,鈴木耕作, 西中浩之, 吉本昌広
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H02105
  • [Presentation] GaAsBiフォトダイオードの分光感度特性2018

    • Author(s)
      岳山恭平,鈴木耕作,長谷川将,西中浩之,吉本昌広
    • Organizer
      日本材料学会半導体エレクトロニクス部門委員会平成29年度第1回研究会
    • Data Source
      KAKENHI-PROJECT-16H02105
  • [Presentation] PEDOT:PSS/GaAs1-xBix有機無機ハイブリッド太陽電池の製作2018

    • Author(s)
      長谷川将,岳山恭平,鈴木耕作,西中浩之,吉本昌広
    • Organizer
      第65回春季応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-16H02105
  • [Presentation] MBE growth of GaAsBi/GaAs on (100) and (411) GaAs Substrates2018

    • Author(s)
      Pallavi Patil, Fumitaro Ishikawa, Satoshi Shimomura, Hiroyuki Nishinaka,Masahiro Yoshimoto
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H02105
  • [Presentation] GaAsBi フォトダイオードの分光感度特性2017

    • Author(s)
      岳山恭平、鈴木耕作、長谷川将、西中浩之、吉本昌広
    • Organizer
      平成29年度第2回半導体エレクトロニクス部門委員会第1回研究会
    • Data Source
      KAKENHI-PROJECT-16H02105
  • [Presentation] Characterizing tail states of GaAsBi photodiodes by threir spectral response2017

    • Author(s)
      K. Kakuyama, K. Suzuki, S. Hasegawa, H. Nishinaka, M. Yoshimoto
    • Organizer
      The 36th Electronic Materials Symposium
    • Data Source
      KAKENHI-PROJECT-16H02105
  • [Presentation] GaAs1-xBix フォトダイオードの分光感度特性2017

    • Author(s)
      岳山恭平、鈴木耕作、長谷川将、西中浩之、吉本昌広
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H02105
  • [Presentation] Fabrication of GaAsBi photodiodes and their spectral response2017

    • Author(s)
      K. Kakuyama, K. Suzuki, H. Nishinaka, M. Yoshimoto
    • Organizer
      8th International Workshop on Bismuth-Containing Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02105
  • [Presentation] 高含有率GaAs1-xBixの特異なPL特性2016

    • Author(s)
      芝田悠将, 来馬英樹, 吉岡諒, 西中浩之, 吉本昌広
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      新潟市
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-16H02105
  • [Presentation] Fabrication of GaAsBi laser diodes with 1.1-μm emission wavelength2016

    • Author(s)
      M. Yoshimoto, R. Yoshioka, H. Kuruma, H. Nishinaka
    • Organizer
      7th International Workshop on Bismuth-Containing Semiconductors
    • Place of Presentation
      上海、中国
    • Year and Date
      2016-07-24
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H02105
  • [Presentation] レーザ発振を示すGaAs1-xBixのMBE成長と特性2014

    • Author(s)
      吉岡諒,冬木琢真,吉本昌広
    • Organizer
      2014年春季 第61回応用物理学関係連合講演会
    • Place of Presentation
      相模原市
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Presentation] MBE成長GaAs1-xBixレーザダイオードの室温発振2014

    • Author(s)
      冬木琢真、吉田憲司、吉岡諒、吉本昌広
    • Organizer
      2014年春季 第61回応用物理学関係連合講演会
    • Place of Presentation
      相模原市
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Presentation] Wavelength Extension of GaAs1-xBix Laser with Low Temperature Coefficient of Lasing Wavelength2013

    • Author(s)
      Takuma Fuyuki, and Masahiro Yoshimoto
    • Organizer
      4th International Workshop on Bismuth-Containing Semiconductors: Growth, Properties and Devices
    • Place of Presentation
      Arkansas, USA
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Presentation] 発振波長の低温度依存性を有する光励起GaAs1-xBixレーザの長波長化2013

    • Author(s)
      冬木琢真,吉本昌広
    • Organizer
      2013年春季 第60回応用物理学会学術講演会
    • Place of Presentation
      厚木市
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Presentation] 発振波長の低温度依存性を有する光励起GaAsBiレーザの長波長化2013

    • Author(s)
      冬木琢真、 吉本昌広
    • Organizer
      第32回電子材料シンポジウム
    • Place of Presentation
      守山市
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Presentation] Long wavelength emission of GaAs1-xBix laser with low-temperature coefficient of lasing wavelength2013

    • Author(s)
      Takuma Fuyuki, and Masahiro Yoshimoto
    • Organizer
      40th International Symposium on Compound Semiconductors (ISCS2013), Kobe, Japan
    • Place of Presentation
      神戸
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Presentation] Localized states in GaAsBi and GaAs/GaAsBi heterostructures2013

    • Author(s)
      M. Yoshimoto and T. Fuyuki
    • Organizer
      4th International Workshop on Bismuth-Containing Semiconductors: Growth, Properties and Devices
    • Place of Presentation
      Arkansas, USA
    • Invited
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Presentation] アドミタンス法によるGaAs/pGaAsBiヘテロ界面評価2012

    • Author(s)
      冬木琢真、柏山祥太, 尾江邦重, 吉本昌広
    • Organizer
      第31回電子材料シンポジウム
    • Place of Presentation
      守山市
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Presentation] アドミタンス法によるGaAs/pGaAs_<1-x>Bi_x界面評価2012

    • Author(s)
      冬木琢真, 柏山祥太, 尾江邦重, 吉本昌広
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学(東京都)
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] High Hole Mobility in GaAs1-xBix Alloys2012

    • Author(s)
      Kosuke Kado, Mizuki Itoh, Yoriko Tominaga, Takuma Fuyuki, Kazuya Yamada, Kunishige Oe, Masahiro Yoshimoto
    • Organizer
      3rd International Workshop on Bismuth-Containing Semiconductors: Growth, Properties and Devices
    • Place of Presentation
      Victoria, Canada
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Presentation] Photo-pumped GaAs_<1-x>Bi_x lasing operation with low-temperature-dependent oscillation wavelength2012

    • Author(s)
      Y.Tominaga, K.Oe, M.Yoshimoto
    • Organizer
      SPIE 2012 Photonic West
    • Place of Presentation
      Moscone Center (San Francisco, USA)(招待講演)
    • Year and Date
      2012-01-23
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Photo-pumped GaAs_<1-x> Bi_x lasing operation with low-temperature-dependent oscillation wavelength2012

    • Author(s)
      Y. Tominaga, K. Oe, M. Yoshimoto
    • Organizer
      SPIE 2012 Photonic West
    • Place of Presentation
      Moscone Center(San Francisco, USA)
    • Year and Date
      2012-01-23
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Interface States in GaAs/p-GaAsBi Heterointerface Using Admittance Spectroscopy2012

    • Author(s)
      Takuma Fuyuki, Shota Kashiyama, Kunishige Oe, Masahiro Yoshimoto
    • Organizer
      3rd International Workshop on Bismuth-Containing Semiconductors: Growth, Properties and Devices
    • Place of Presentation
      Victoria, Canada
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Presentation] Study of deep levels of GaAs/p-GaAs_<1-x> Bi_x heterostructure grown by molecular beam epitaxy2012

    • Author(s)
      T. Fuyuki, S. Kashiyama, K. Oe, M. Yoshimoto
    • Organizer
      Materials Research Society 2012 Spring meeting, Symposium G
    • Place of Presentation
      Moscone Center(San Francisco, USA)
    • Year and Date
      2012-04-10
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Study of the Deep Levels of a GaAs/p-GaAs1-xBix Heterostructure Grown by Molecular Beam Epitaxy2012

    • Author(s)
      Takuma Fuyuki, Shota Kashiyama, Kunishige Oe, Masahiro Yoshimoto
    • Organizer
      2012 Materials Reserch Society (MRS) Spring Meeting
    • Place of Presentation
      San Francisco
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Presentation] Quantitative estimation of the density of Bi-induced localized states in GaAs1-xBix grown by molecular beam epitaxy2012

    • Author(s)
      Mizuki Itoh, Yoriko Tominaga, Kunishige Oe, Masahiro Yoshimoto
    • Organizer
      17th International Conference on Molecular Beam Epitaxy (MBE2012)
    • Place of Presentation
      奈良
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Presentation] DLTS法によるp型GaAsBi結晶中の点欠陥評価2011

    • Author(s)
      冬木琢真, 柏山祥太, 富永依里子, 尾江邦重, 吉本昌広
    • Organizer
      第30回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖(滋賀県守山市)
    • Year and Date
      2011-06-30
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] GaAs_<1-x>Bix/GaAsヘテロ接合界面の急峻性の熱処理による変化2011

    • Author(s)
      富永依里子, 尾江邦重, 吉本昌広
    • Organizer
      第30回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖(滋賀県守山市)
    • Year and Date
      2011-06-30
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Structural evaluation of GaAs1-xBix mixed crystals by TEM2011

    • Author(s)
      Osamu Ueda, Yoriko Tominaga, NoriakiIkenaga, Masahiro Yoshimoto, andKunishige Oe
    • Organizer
      International Conference on InP and Related Materials (IPRM2011)
    • Place of Presentation
      Berlin、Germany
    • Year and Date
      2011-05-24
    • Data Source
      KAKENHI-PROJECT-22560012
  • [Presentation] GaAs_<1-x>Bi_xのp形ドーピング特性2011

    • Author(s)
      角浩輔, 山田和弥, 尾江邦重, 吉本昌広
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学(山形市)
    • Year and Date
      2011-08-30
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] GaAs_<1-x>Bi_x/GaAsヘテロ接合界面の急峻性の熱処理による変化2011

    • Author(s)
      富永依里子, 尾江邦重, 吉本昌広
    • Organizer
      第58回 応用物理学関係連合大会
    • Place of Presentation
      東海大学(厚木市)
    • Year and Date
      2011-03-26
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Variations in the abruptness at GaAs_<1-x>Bi_x/GaAs heterointerfaces caused by thermal annealing2011

    • Author(s)
      Y.Tominaga, K.Oe, M.Yoshimoto
    • Organizer
      38th International Symposium on Compound Semiconductors (ISCS2011)
    • Place of Presentation
      Maritim proArte Hotel (Berlin, Germany)
    • Year and Date
      2011-05-25
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Lasing in GaAsBi with low temperature dependence of oscillation wavelength2011

    • Author(s)
      Masahiro Yoshimoto, Y.Tominaga, Kunishige Oe
    • Organizer
      2nd International workshop on Bismuth-Containing Semiconductors : Theory, Simulation, and Experiment
    • Place of Presentation
      Univ.of Surrey (Guildford, UK)
    • Year and Date
      2011-07-19
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Deep level transient spectroscopy study of p-type GaAs_<1-x> Bi_x mixed crystals2011

    • Author(s)
      T. Fuyuki, S. Kashiyama, Y. Tominaga, K. Oe, M. Yoshimoto
    • Organizer
      38th International Symposium on Compound Semiconductors(ISCS2011)
    • Place of Presentation
      Maritim proArte Hotel(Berlin, Germany)
    • Year and Date
      2011-05-24
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Stractural evaluation of GaAs_<1-x>Bi_x mixed crystals by TEM2011

    • Author(s)
      O.Ueda, Y.Tominaga, N.Ikenaga, Masahiro Yoshimoto, K.Oe
    • Organizer
      23rd International Conference on Indium Phosphide and Related Materials (IPRM2011)
    • Place of Presentation
      Maritim proArte Hotel (Berlin, Germany)
    • Year and Date
      2011-05-24
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] p形GaAsBiの電気的特性2011

    • Author(s)
      角浩輔, 山田和弥, 尾江邦重, 吉本昌広
    • Organizer
      第30回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖(滋賀県守山市)
    • Year and Date
      2011-06-30
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Structural evaluation of GaAs_<1-x>Bi_<x> mixed crystals by TEM2011

    • Author(s)
      Osamu Ueda, Yoriko Tominaga, Noriaki Ikenaga, Masahiro Yoshimoto, Kunishige Oe
    • Organizer
      International Conference on InP and Related Material (IPRM 2011)
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      2011-05-24
    • Data Source
      KAKENHI-PROJECT-22560012
  • [Presentation] (100)GaAs基板上In_<1-y>Ga_yAs_<1-x>Bi_x/GaAs多重量子井戸構造の製作(II)2011

    • Author(s)
      富永依里子, 山田和弥, 尾江邦重, 吉本昌広
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学(山形市)
    • Year and Date
      2011-08-30
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] TEM evaluation of MBE-grown GaAs_<1-x>Bi_<x> crystals2011

    • Author(s)
      Osamu Ueda, Yoriko Tominaga, Noriaki Ikenaga, Masahiro Yoshimoto, Kunishige Oe
    • Organizer
      30^<th> Electronic Materials Symposium (EMS-30)
    • Place of Presentation
      滋賀県守山市、ラフォーレ琵琶湖
    • Year and Date
      2011-06-30
    • Data Source
      KAKENHI-PROJECT-22560012
  • [Presentation] DLTS法によるGaAs_<1-x>Bi_x結晶中の点欠陥評価(II)2011

    • Author(s)
      冬木琢真, 柏山祥太, 富永依里子, 尾江邦重, 吉本昌広
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学(山形市)
    • Year and Date
      2011-08-30
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] 光励起によるGaAs_<1-x>Bi_x/GaAs薄膜のファブリ・ペローレーザ発振-その発振波長の低温度依存性-2011

    • Author(s)
      富永依里子、尾江邦重, 吉本昌広
    • Organizer
      電子情報通信学会レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      機械振興会館(東京)
    • Year and Date
      2011-12-16
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] MBE成長GaAs_<1-x>Bi_x結晶のTEM評価2011

    • Author(s)
      上田修, 富永依里子, 池永訓昭, 吉本昌広, 尾江邦重
    • Organizer
      第30回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖(滋賀県守山市)
    • Year and Date
      2011-06-30
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Deep level transient spectroscopy study of p-type GaAs_<1-x>Bi_x mixed crystals2011

    • Author(s)
      T.Fuyuki, S.Kashiyama, Y.Tominaga, K.Oe, M.Yoshimoto
    • Organizer
      38th International Symposium on Compound Semiconductors (ISCS2011)
    • Place of Presentation
      Maritim proArte Hotel (Berlin, Germany)
    • Year and Date
      2011-05-24
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] TEM evaluation of MBE-grown GaAs1-xBix crystals2011

    • Author(s)
      Osamu Ueda, Yoriko Tominaga, Noriaki Ikenaga, Masahiro Yoshimoto, and Kunishige Oe
    • Organizer
      30th Electronic Materials Symposium (EMS-30)
    • Place of Presentation
      滋賀県守山市、ラフォーレ琵琶湖
    • Year and Date
      2011-06-30
    • Data Source
      KAKENHI-PROJECT-22560012
  • [Presentation] DLTS法によるGaAs_<1-x>Bi_x結晶中の点欠陥評価2011

    • Author(s)
      冬木琢真, 柏山祥太, 山田和弥, 尾江邦重, 吉本昌広
    • Organizer
      第58回 応用物理学関係連合大会
    • Place of Presentation
      東海大学(厚木市)
    • Year and Date
      2011-03-26
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Stractural evaluation of GaAs_<1-x> Bi_x mixed crystals by TEM2011

    • Author(s)
      O. Ueda, Y. Tominaga, N. Ikenaga, M. Yoshimoto, K. Oe
    • Organizer
      23rd International Conference on Indium Phosphide and Related Materials(IPRM2011)
    • Place of Presentation
      Maritim proArte Hotel(Berlin, Germany)
    • Year and Date
      2011-05-24
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Lasing in GaAsBi with low temperature dependence of oscillation wavelength2011

    • Author(s)
      M. Yoshimoto, Y. Tominaga, K. Oe
    • Organizer
      2nd International workshop on Bismuth-Containing Semiconductors
    • Place of Presentation
      Univ. of Surrey(Guildford, UK)
    • Year and Date
      2011-07-19
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Variations in the abruptness at GaAs_<1-x> Bi_x/GaAs heterointerfaces caused by thermal annealing2011

    • Author(s)
      Y. Tominaga, K. Oe, M. Yoshimoto
    • Organizer
      38th International Symposium on Compound Semiconductors(ISCS2011)
    • Place of Presentation
      Maritim proArte Hotel(Berlin, Germany)
    • Year and Date
      2011-05-25
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] GaAs基板上GaAs_<1-x>Bi_x/Al_yGa_<1-y>As多重量子井戸構造の製作2010

    • Author(s)
      T.Fuyuki, Y.Tominaga, K.Oe, M.Yoshimoto
    • Organizer
      第29回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ修善寺(伊豆市)
    • Year and Date
      2010-07-14
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Present status and future prospects of Bi-containing semiconductors2010

    • Author(s)
      M. Yoshimoto, K. Oe
    • Organizer
      1st International Workshop on Bismuth-Containing Semiconductors
    • Place of Presentation
      ミシガン大学(米国)
    • Year and Date
      2010-07-14
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Lasing in GaAs_<1-x> Bi_x/GaAs thin film cavity with low-temperature-dependent oscillation wavelength2010

    • Author(s)
      Y. Tominaga, K. Oe, M. Yoshimoto
    • Organizer
      2010 IEEE International Semiconductor Laser Conference
    • Place of Presentation
      全日空ホテル(京都市)
    • Year and Date
      2010-09-30
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] GaAs_<1-x>Bi_xファブリ・ペローレーザの発振波長の低温度依存性2010

    • Author(s)
      富永依里子, 尾江邦重, 吉本昌広
    • Organizer
      第57回応用物理学関係連合大会
    • Place of Presentation
      東海大学 (平塚市)
    • Year and Date
      2010-03-19
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] TEMによるMBE成長GaAs_<1-x>Bi_x混晶の構造評価2010

    • Author(s)
      上田修, 富永依里子, 池永訓昭, 吉本昌広, 尾江邦重
    • Organizer
      第71回応用物理学会学術講会
    • Place of Presentation
      長崎大学(長崎市)
    • Year and Date
      2010-09-16
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Temperature insensitive Photoluminescence Emission Wavelength in GaAs_<1-x>Bi_x/GaAs Multiquantum Wells2010

    • Author(s)
      Y.Tominaga, K.Oe, M.Yoshimoto
    • Organizer
      37th International Symposium on Compound Semiconductors
    • Place of Presentation
      高松シンボルタワー(高松市)
    • Year and Date
      2010-06-04
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Present status and future prospects of Bi-containing semiconductors2010

    • Author(s)
      M.Yoshimoto, K.Oe
    • Organizer
      1st International Workshop on Bismuth-Containing Semiconductors
    • Place of Presentation
      ミシガン大学(米国)(招待講演)
    • Year and Date
      2010-07-14
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] (100)GaAs基板上GaAs_<1-x>Bi_x/Al_yGa_<1-y>As多重量子井戸構造の製作2010

    • Author(s)
      冬木琢真, 富永依里子, 山田和弥, 尾江邦重, 吉本昌広
    • Organizer
      第57回応用物理学関係連合大会
    • Place of Presentation
      東海大学 (平塚市)
    • Year and Date
      2010-03-18
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] GaAs_<1-x>Bi_xファブリ・ペローレーザの発振波長の低温度依存性2010

    • Author(s)
      富永依里子, 尾江邦重, 吉本昌広
    • Organizer
      第71回応用物理学会学術講会
    • Place of Presentation
      長崎大学(長崎市)(受賞記念講演)
    • Year and Date
      2010-09-16
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] 光励起によるGaAs_<1-x>Bi_x/GaAs薄膜のファブリ・ペローレーザ発振・その発振波長の低温度依存性2010

    • Author(s)
      富永依里子, 尾江邦重, 吉本昌広
    • Organizer
      電子情報通信学会 レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      機械振興会館(東京都)
    • Year and Date
      2010-12-17
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Lasing in GaAs_<1-x>Bi_x/GaAs Thin Film Cavity with Low-Temperature-Dependent Oscillation Wavelength2010

    • Author(s)
      Y.Tominaga, K.Oe, M.Yoshimoto
    • Organizer
      2010 IEEE International Semiconductor Laser Conference
    • Place of Presentation
      全日空ホテル(京都市)
    • Year and Date
      2010-09-30
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Temperature-insensitive photoluminescence emission wavelength in GaAs_<1-x> Bi_x/GaAs multiquantum Wells2010

    • Author(s)
      Y. Tominaga, K. Oe, M. Yoshimoto
    • Organizer
      37th International Symposium on Compound Semiconductors
    • Place of Presentation
      高松シンボルタワー(高松市)
    • Year and Date
      2010-05-31
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Growth of GaAs_<1-x> Bi_x/Al_yGa_<1-y> As multi-quantum well structures on GaAs2010

    • Author(s)
      T. Fuyuki, Y. Tominaga, K. Yamada, K. Oe, M. Yoshimoto
    • Organizer
      Electronic Materials Conference
    • Place of Presentation
      ノートルダム大学(米国)
    • Year and Date
      2010-06-24
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Growth of GaAs_<1-x>Bi_x/Al_yGa_<1-y>As Multi-Quantum Well Structures on GaAs2010

    • Author(s)
      T.Fuyuki, Y Tominaga, K.Yamada, K.Oe, M.Yoshimoto
    • Organizer
      Electronic Materials Conference 2010
    • Place of Presentation
      ノートルダム大学(米国)
    • Year and Date
      2010-06-24
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] GaAs_<1-x>Bi_xレーザの発振波長の低温度依存性2010

    • Author(s)
      Y.Tominaga, K.Oe, M.Yoshimoto
    • Organizer
      第29回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ修善寺(伊豆市)
    • Year and Date
      2010-07-14
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Structural investigation of GaAs_<1-x>Bi_x/GaAs multiquantum well structures fabricated by molecular beam epitaxy2009

    • Author(s)
      Y.Tominaga, Kunishige Oe, Masahiro Yoshimoto
    • Organizer
      第28回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖 (守山市)
    • Year and Date
      2009-07-09
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] 分子線エピタキシー法を用いて成長したGaAs_<1-x>Bi_xGaAs多重量子井戸の構造評価2009

    • Author(s)
      富永依里子, 尾江邦重, 吉本昌広
    • Organizer
      応用物理学会結晶工学分科会2009年年末講演会
    • Place of Presentation
      学習院 (東京)
    • Year and Date
      2009-12-11
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] (100) GaAs基板上In_<1-y>Ga_yAs_<1-x>Bi_x/GaAs多重量子井戸構造の製作2009

    • Author(s)
      山田和弥, 富永依里子, 尾江邦重, 吉本昌広
    • Organizer
      第56回応用物理関係連合講演会
    • Place of Presentation
      つくば市
    • Year and Date
      2009-03-31
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] Growth of InGaAsBi/GaAs Multi-Quantum Wells on (100) GaAs2009

    • Author(s)
      K.Yamada, Y.Tominaga,, Kunishige Oe, Masahiro Yoshimoto
    • Organizer
      2009 International Meeting for Future of Electron Devices, Kansai
    • Place of Presentation
      関西大学 (吹田市)
    • Year and Date
      2009-05-14
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Fabrication of Growth of GaAs_<1-x>Bi_x/GaAs multiquantum well structure without distinct segregation for application to laser diodes with the temperature-insensitive wavelength2009

    • Author(s)
      Y.Tominaga, Kunishige Oe, Masahiro Yoshimoto
    • Organizer
      2nd HOPE meeting
    • Place of Presentation
      箱根プリンスホテル (箱根町)
    • Year and Date
      2009-09-28
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Growth of InGaAsBi/GaAs multi-quantum wells on (100)GaAs substrate2009

    • Author(s)
      Kazuya Yamada, Yoriko Tominaga,Kunishige Oe, Masahiro Yoshimoto
    • Organizer
      The 2009 InternationalMeeting for Future of Electron Devices, Kansai
    • Place of Presentation
      吹田市
    • Year and Date
      2009-05-15
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] GaAs_<1-x>Bi_x/GaAs多重量子井戸の構造評価2009

    • Author(s)
      富永依里子, 尾江邦重, 吉本昌広
    • Organizer
      第56回応用物理関係連合講演会
    • Place of Presentation
      つくば市
    • Year and Date
      2009-03-31
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] Growth of InGaAsBi/GaAs multi-quantum wells on(100) GaAs2009

    • Author(s)
      K. Yamada, Y. Tominaga, K. Oe, M. Yoshimoto
    • Organizer
      2009 International Meeting for Future of Electron Devices, Kansai
    • Place of Presentation
      関西大学(吹田市)
    • Year and Date
      2009-05-14
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] (100)GaAs基板上In_<1-y>Ga_yAs_<1-x>Bi_x/GaAs多重量子井戸構造の製作2009

    • Author(s)
      山田和弥, 富永依里子, 尾江邦重, 吉本昌広
    • Organizer
      第56回応用物理関係連合講演会
    • Place of Presentation
      つくば市
    • Year and Date
      2009-03-31
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] X線回折を用いたGaAs_<1-x>Bi_x/GaAs多重量子井戸構造の評価2009

    • Author(s)
      富永依里子, 山田和弥, 尾江邦重, 吉本昌広
    • Organizer
      応用物理学会 第70回学術講演会
    • Place of Presentation
      富山大学 (富山市)
    • Year and Date
      2009-09-09
    • Data Source
      KAKENHI-PROJECT-21360008
  • [Presentation] Growth of InGaAsBi/GaAs Multi-Quantum Wells on (100) GaAs Substrate2009

    • Author(s)
      K, Yamada, Y. Tominaga, K. Oe, M. Yoshimoto
    • Organizer
      The 2009 International Meeting for Future of Electron Devices, Kansai
    • Place of Presentation
      吹田市
    • Year and Date
      2009-05-15
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] MBE Growth of GaAsBi/GaAs Multiple Quantum Well Structures2008

    • Author(s)
      Y., Kinoshita, Y., Tominaga, K., Oe, M., Yoshimoto
    • Organizer
      TECHNICAL REPORT OF IEICE
    • Place of Presentation
      LQE OSAKADENKITUSHIN U. NEYAGAWA-SHI
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] Growth of GaAs_<1-x>Bi_xB/GaAs multi-quantum wells with 1.3 μm photoluminescence emission2008

    • Author(s)
      Yoriko Tominaga, Yusuke Kinoshita, Kunishige Oe, Masahiro Yoshimoto
    • Organizer
      50th Electronic Materials Conference
    • Place of Presentation
      Santa Barbara, CA, USA
    • Year and Date
      2008-06-25
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] Growth of GaAs_<1-x>Bi_x/GaAs multi-quantum wells with 1.3μm photoluminescence emission2008

    • Author(s)
      Y. Tominaga, Y. Kinoshita, K. Oe, M. Yoshimoto
    • Organizer
      50th Electronic Materials Conference
    • Place of Presentation
      Santa Barbara, CA, USA
    • Year and Date
      2008-06-25
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] 1.3μmでのホトルミネセンス発光を有するGaAs_<1-x>Bi_xB/GaAs多重量子井戸構造の製作2008

    • Author(s)
      富永依里子, 木下雄介, 尾江邦重, 吉本昌広
    • Organizer
      第33回結晶成長討論会
    • Place of Presentation
      仙台市
    • Year and Date
      2008-09-11
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] Fabrication of GaAsBi/GaAs multi-Quantum well structures with 1.3μm2008

    • Author(s)
      富永依里子, 木下雄介, 尾江邦重, 吉本昌広
    • Organizer
      第27回電子材料シンポジウム
    • Place of Presentation
      伊豆市
    • Year and Date
      2008-07-11
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] GaAsBi/GaAs multi-quantum wells with well-defined multi-layered structures2008

    • Author(s)
      Y. Tominaga, Y. Kinoshita, K. Oe. M. Yoshimoto
    • Organizer
      IEEE Nanotechnology Materials and Devices Conference 2008
    • Place of Presentation
      京都市
    • Year and Date
      2008-10-10
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] Fabrication of GaAsBi/GaAs multi-quantum well structures with 1.3μm2008

    • Author(s)
      富永依里子, 木下雄介, 尾江邦重, 吉本昌広
    • Organizer
      第27回電子材料シンポジウム
    • Place of Presentation
      伊豆市
    • Year and Date
      2008-07-11
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] 1.3μmでのホトルミネセンス発光を有するGaAs_<1-x>Bi_x/GaAs多重量子井戸構造の製作2008

    • Author(s)
      富永依里子, 木下雄介, 尾江邦重, 吉本昌広
    • Organizer
      第33回結晶成長討論会
    • Place of Presentation
      仙台市
    • Year and Date
      2008-09-11
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] GaAsBi/GaAs multi-quantum wells with well-defined multi-layered structures2008

    • Author(s)
      Yoriko Tominaga, Yusuke Kinoshita, Kunishige Oe, Masahiro Yoshimoto
    • Organizer
      IEEE Nanotechnology Materials and DevicesConference 2008
    • Place of Presentation
      京都市
    • Year and Date
      2008-10-10
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] MBE Growth of GaAsBi/GaAs Multi-Quantum-Well Structure emitting 1.3 um wavelength2008

    • Author(s)
      Y., Tominaga, K., Oe, M., Yoshimoto
    • Organizer
      55th OYOBUTURIGAKUKANKEI RENGO KOUENKAI(29p-ZT-7)
    • Place of Presentation
      NIHON U. HUNABASHISHI
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] MBE Growth of GaAsBi/GaAs Multiple Quantum Well Stmctures2007

    • Author(s)
      Y., Kinoshita, Y., Tominaga, G., Feng, K., Oe, M., Yoshimoto
    • Organizer
      54th OYOBUTURIGAKUKANKEI RENGO KOUENKAI(29p-Q-2)
    • Place of Presentation
      AOYAMAGAKUIN U. SAGAMIHARASHI
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] Annealing effects of diluted GaAs nitride and bismide on photoluminescence2007

    • Author(s)
      Masahiro Yoshimoto, Gan Feng, Kunishige Oe
    • Organizer
      211th Electrochemical Society Meeting
    • Place of Presentation
      米国シカゴ
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] Annealing effects of diluted GaAs nitride and bismide on photoluminescence2007

    • Author(s)
      M., Yoshimoto, G., Feng, K., Oe
    • Organizer
      211th Electro Chemical Sosiety Meeting
    • Place of Presentation
      Chicago, IL, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] Fabrication of GaAsBi/GaAs multi-quantum-well structures and their thermal stability2007

    • Author(s)
      Y., Tominaga, Y., Kinoshita, G., Feng, K., Oe, M., Yoshimoto
    • Organizer
      26th Electronic Materials Sympo.(EMS-26), Shiga
    • Place of Presentation
      A8
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] Annealing Effects of Diluted GaAs Nitride and Bismide on Photoluminescence2007

    • Author(s)
      M. Yoshimoto,.,
    • Organizer
      211th Electrochemical Society Meeting
    • Place of Presentation
      Chicago, Illinois, USA,
    • Year and Date
      2007-05-09
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] MBE Growth of GaAsBi/GaAs Multi-Quantum-Well Structures(II)2007

    • Author(s)
      Y., Tominaga, Y., Kinoshita, G., Feng, K., Oe, M., Yoshimoto
    • Organizer
      68th OYOBUTURIGAKKAI GAKUJYUTU KOUENKAI(7p-E-7)
    • Place of Presentation
      HOKKAIDOKOGYOU U. SAPPOROSHI
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] Annealing effects of diluted GaAs nitride and bismide on photoluminescence2007

    • Author(s)
      Masahiro Yoshimoto, Gan Feng, Kunishige Oe
    • Organizer
      211th Electrochemical Society Meeting
    • Place of Presentation
      Chicago, IL, USA
    • Year and Date
      2007-05-07
    • Data Source
      KAKENHI-PROJECT-19360008
  • [Presentation] Influence of thermal annealing treatment on 'the luminescence properties of dilute GaNAsBi alloy2007

    • Author(s)
      G., Feng, K., Oe, M., Yoshimoto
    • Organizer
      54th OYOBUTURIGAKUKANKEI RENGO KOUENKAI(29p-Q-3)
    • Place of Presentation
      AOYAMAGAKUIN U. SAGAMIHARASHI
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] GaAsBi/GaAs Multiple Quantum Well Structures Grown by Molecular Beam Epitaxy2007

    • Author(s)
      Y., Kinoshita, Y., Tominaga, G., Feng, K., Oe, M. Yoshimoto
    • Organizer
      The 2007 Intemational Meeting for Future of Electron Devices, Kansai
    • Place of Presentation
      Osaka, Japan
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] GaN_yAs_<i-x-y>Bi_x Alloy for Temperature-insensitive Wavelength Semiconductor Lasers2007

    • Author(s)
      K., Oe, G., Feng, Y., Kinoshita, M., Yoshimoto
    • Organizer
      European Materials Reserch Society Spring Meeting, 57
    • Place of Presentation
      Strasbourg, France
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] Growth of GaAsBi/GaAs Multi-Quantum-Wells by Molecular Beam Epitaxy2007

    • Author(s)
      Y., Tominaga, Y., Kinoshita, G., Feng, K., Oe, M., Yoshimoto
    • Organizer
      The 34 th International Symposium on Compound Semiconductors(ISCS)
    • Place of Presentation
      Kyoto, Japan
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] Molecular Beam Epitaxy of GaNAsBi Layer for Temperature-insensitive Wavelength Emission2006

    • Author(s)
      M., Yoshimoto, W., Huang, G., Feng, Y., Tanaka, K., Oe
    • Organizer
      14th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Tokyo, Japan, FrB3-4
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] Temperature dependence of Bi behaviors in MBE growth of InGaAs2006

    • Author(s)
      G., Feng, K., Oe, M., Yoshimoto
    • Organizer
      14th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Tokyo, Japan, TuA2-2
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] Temperature-Insensitive Wavelength Electroluminescent Emission from GaNAsBi/GaAs DH Diodes2006

    • Author(s)
      K., Oe, Y., Tanaka, W., Huang, G., Feng, K., Yamashita, M., Yoshimoto, Y., Kondo
    • Organizer
      Northern Optics 2006
    • Place of Presentation
      Bergen, Norway, W39
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] Low temperature dependence of light emission and absorption of GaNAsBi/GaAs DH diodes2006

    • Author(s)
      H., Kazama, Y., Tanaka, M., Yoshimoto, W., Huang, G., Feng, K., Yamashita, Y., Kondo, S., Tsuji, K., Oe
    • Organizer
      67th OYOBUTURIGAKKAI GAKUJYUTU KOUENKAI(29a-B-8)
    • Place of Presentation
      RITSUMEIKAN U. KUSATSUSHI
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] Molecular beam epitaxy of GaNAsBi layer for temperature-insensitive wavelength emission2006

    • Author(s)
      M., Yoshimoto, W., Huang, G., Feng, Y., Tanaka, K., Oe
    • Organizer
      25th Electronic Materials Sympo. (EMS-25), Izu-no-kuni
    • Place of Presentation
      I5
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] Temperature-Insensitive Wavelength Emission and Absorption Characteristics of GaNAsBi/GaAs DH Diodes2006

    • Author(s)
      K., Oe, Y., Tanaka, W., Huang, G., Feng, K., Yamashita, M., Yoshimoto, Y., Kondo, S., Tsuji
    • Organizer
      32nd European Conference on Optical Communication
    • Place of Presentation
      Cannes, France, We3.P.39
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] Temperature dependence of Bi behaviors in MBE growth of InGaAs2006

    • Author(s)
      G., Feng, K., Oe, M., Yoshimoto
    • Organizer
      53th OYOBUTURIGAKUKANKEI RENGO KOUENKAI(25a-T-11)
    • Place of Presentation
      MUSASHIKOUGYOU U. TOUKYOUTO
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] GaNAsBi Semiconductor Alloy with Temperature-Insensitive Bandgap2005

    • Author(s)
      M., Yoshimoto, W., Huang, G., Feng, K., Oe
    • Organizer
      (INVITED) Materials Research Society 2005 Fall Meeting, Symposium EE
    • Place of Presentation
      Boston, USA, EE 11.6
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] MBE growth of quatemary InGaAsBi alloy", Jpn. J. Appl. Phys., Part I, Vol.45, pp.67-69, 20062005

    • Author(s)
      G., Feng, M., Yoshimoto, K., Oe, A.m, Chayahara, Y.m, Horino
    • Organizer
      66th OYOBUTURIGAKKAI GAKUJYUTU KOUENKAI(10p-ZA-1)
    • Place of Presentation
      TOKUSHIMA U. TOKUSHIMASHL
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] Temperature-insensitive refractive index of GaAsBi alloy for laser diode in WDM optical communication2005

    • Author(s)
      K., Yamashita, M., Yoshimoto, K., Oe
    • Organizer
      32nd International Symposium on Compound Semiconductors(ISCS-2005), WE P16, Rust, Germany
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] New semiconductor alloy GaNAsBi with temperature insensitive bandgap2005

    • Author(s)
      M., Yoshimoto, W., Huang, G., Feng, K., Oe
    • Organizer
      International Conference on Nitride Semiconductors
    • Place of Presentation
      Bremen, Germany, Tu-G2-6
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] Temperature-insensitive refractive index of GaAsBi alloy2005

    • Author(s)
      K., Yamashita, M., Yoshimoto, K., Oe
    • Organizer
      66th OYOBUTURIGAKKAI GAKUJYUTU KOUENKAI(10p-ZA-2)
    • Place of Presentation
      TOKUSHIMA U. TOKUSHIMASHI
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] New semiconductor alloy GaNAsBi wit] ; temperature-insensitive bandgap2005

    • Author(s)
      M., Yoshimoto, W., Huang, G., Feng, K., Oe
    • Organizer
      24th Electronic Materials Sympq.(EMS-24), Matsuyama
    • Place of Presentation
      D1
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] GaNyAsl-x-yBix Semiconductor Alloy for Temperature-insensitive-wavelength Lasers in WDM Optical Communication2005

    • Author(s)
      K., Oe, W., Huang, G., Feng, M., Yoshimoto
    • Organizer
      18th Annual Meeting IEEE Lasers & Electro-Optics Society(LEOS)
    • Place of Presentation
      Sydney, ThP2
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360140
  • [Presentation] 発振波長の低い温度依存性を有するGaAs1-xBixレーザダイオードの実現

    • Author(s)
      冬木琢真,吉田憲司,吉岡諒,吉本昌広
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-17 – 2014-09-20
    • Invited
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Presentation] Molecular Beam Epitaxy of Laser-quality GaAsBi

    • Author(s)
      R. Yoshioka, T. Fuyuki, K. Yoshida, M. Yoshimoto
    • Organizer
      8th International Conference on Molecular Beam Epitaxy (MBE 2014)
    • Place of Presentation
      Flagstaff, Arizona, USA
    • Year and Date
      2014-09-07 – 2014-09-12
    • Invited
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Presentation] GaAsBi Laser Diodes with Low Temperature Dependence of Lasing Wavelength

    • Author(s)
      T. Fuyuki, R. Yoshioka, K. Yoshida, M. Yoshimoto
    • Organizer
      Conference on Lasers and Electro-Optics (CLEO) 2014
    • Place of Presentation
      San Jose, CA , USA
    • Year and Date
      2014-06-08 – 2014-06-13
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Presentation] 発振波長の低い温度依存性を有するGaAsBiレーザダイオードの実現

    • Author(s)
      冬木琢真、吉田憲司、吉岡 諒、吉本昌広
    • Organizer
      電子情報通信学会 信頼性/機構デバイス/電子部品・材料/光エレクトロニクス/レーザ・量子エレクトロニクス合同研究会
    • Place of Presentation
      小樽経済センター
    • Year and Date
      2014-08-21 – 2014-08-22
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Presentation] Molecular beam epitaxy of GaAsBi and its lasing chracteristics

    • Author(s)
      M. Yoshimoto
    • Organizer
      6th International Conference on Optical, Optoelectronic and Photonic Materials and Applications (ICOOPMA)
    • Place of Presentation
      Leeds, UK
    • Year and Date
      2014-07-27 – 2014-08-01
    • Invited
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Presentation] Molecular beam epitaxy of GaAsBi and its application to laser diodes with low-temperature dependence of oscillation wavelength

    • Author(s)
      M. Yoshimoto
    • Organizer
      18th European Molecular Beam Epitaxy workshop
    • Place of Presentation
      Canazei, Italy
    • Year and Date
      2015-03-15 – 2015-03-18
    • Invited
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Presentation] GaAsBi laser diodes fabricated by molecular beam epitaxy

    • Author(s)
      M. Yoshimoto, R. Yoshioka, K. Yoshida, and T. Fuyuki
    • Organizer
      5th International Workshop on Bismuth-Containing Semiconductors
    • Place of Presentation
      Cork, Ireland
    • Year and Date
      2014-07-13 – 2014-07-16
    • Data Source
      KAKENHI-PROJECT-24246008
  • [Presentation] GaAsBi Laser Diodes with Low Temperature Dependence of Lasing Wavelength

    • Author(s)
      M. Yoshimoto
    • Organizer
      6th International Workshop on Bismuth-Containing Semiconductors
    • Place of Presentation
      Madison, Wisconsin, USA
    • Year and Date
      2015-07-19 – 2015-07-22
    • Invited
    • Data Source
      KAKENHI-PROJECT-24246008
  • 1.  MATSUNAMI Hiroyuki (50026035)
    # of Collaborated Projects: 26 results
    # of Collaborated Products: 0 results
  • 2.  FUYUKI Takashi (10165459)
    # of Collaborated Projects: 23 results
    # of Collaborated Products: 0 results
  • 3.  KIMOTO Tsunenobu (80225078)
    # of Collaborated Projects: 15 results
    # of Collaborated Products: 0 results
  • 4.  OE Kunishige (20303927)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 136 results
  • 5.  板谷 良平 (90025833)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 6.  池畑 隆 (00159641)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 7.  真瀬 寛 (30007611)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 8.  SARAIE Junji (90026154)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 9.  MATSUMURA Nobuo (60107357)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 10.  YAMASHITA Kenichi (00346115)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 12 results
  • 11.  久保 寔 (80089127)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 12.  UEDA Osamu (50418076)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 8 results
  • 13.  YAMAGUCHI Atsushi (60449428)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 14.  SAKUMA Yoshiki (60354346)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 15.  GONOKAMI Makoto (70161809)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 16.  YAGUCHI Hiroyuki (50239737)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 17.  IKENAGA Noriaki (30512371)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 8 results
  • 18.  URA Shogo (10193955)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 19.  HIROKI Akira (80346113)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 20.  KINTAKA Kenji (50356911)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 21.  八坂 保能 (30109037)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 22.  西中 浩之 (70754399)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 14 results
  • 23.  上田 大助 (60540424)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 24.  石田 秀俊 (00572009)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 25.  TOMINAGA Yoriko
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 17 results
  • 26.  YAMADA Kazuya
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 4 results
  • 27.  安達 伸雄
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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