TOYABE Toru 鳥谷部達

… Alternative Names

TOYABE Tohru 鳥谷部達

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Researcher Number	20266993
Other IDs
Affiliation (based on the past Project Information) *help	2006 – 2008: 東洋大学, 工学部, 教授 2002 – 2004: 東洋大学, 工学部, 教授 1996 – 1998: 東洋大学, 工学部, 教授
Review Section/Research Field	Principal Investigator 電子デバイス・機器工学 Except Principal Investigator Inorganic materials/Physical properties / 電子デバイス・機器工学 / Structural/Functional materials
Keywords	Principal Investigator SOIMOSFET / Field Dependent Mobility / Schroedinger Equation / Simulation / Quantum Effect / Fully Inverted Type / シュレーデインガー方程式 / 電界依存移動度 / シュレーディンガー方程式 / シミュレーション … More / 量子効果 / 完全反転型 / Critical charge / Random structure / Modeling / Circuit / Device / Coulomb blockade / 臨界電荷 / ランダム構造 / モデリング / 回路 / デバイス / クーロンブロッケード … More Except Principal Investigator SOI MOSFET / InSb / InAs / SIMOX基板 / hot luminescence / quantum dot / nanowires / luminescence spectroscopy / hot carrier / narrow-gap semiconductor / 微小ギャップ半導 / 量子細線 / 近接場ナノフォトニクス / ホットルミネッセンス / 量子ドット / ナノ細線 / 蛍光分光 / ホットキャリヤー / 微小ギャップ半導体 / short signal delay / high packing density / low power supply / top Si layer / threshold voltage / fully inverted / トップシリコン層 / 電子ビーム蒸着装置 / 完全反転臨界膜厚 / 高相互コンダクタンス / 低サブスレッショルド係数 / 低闘値電圧 / 完全反転型SOI MOSFET / シリコン超薄膜 / 伝達コンダクタンス特性 / サブヌレッショルド特性 / 臨界膜厚 / 2次元電子状態 / 高速デバイス / 短チャネル効果 / 低消費電力 / 上部Si層 / 閾値電圧 / 完全反転型 / サブスレッドショルド係数 / SOQ MOSFET / キャリア捕獲中心 / BOX(Buried Oxide) / SOQ基板 / SOI基板 / SOQ / SOI / MOSFET / 新機能材料 Less

Exploration of feasible applications of SOQ wafers to various fields
- Principal Investigator
  
  HANAJIRI Tatsuro
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Structural/Functional materials
- Research Institution
  Toyo University
Spatial and temporal spectroscopy of the luminescence generated by hot carriers in narrow-gap-semiconductor quantum dots
- Principal Investigator
  
  WADA Noboru
- Project Period (FY)
  2002 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Inorganic materials/Physical properties
- Research Institution
  Toyo University
Quantum Mechanical Simulation of Ultra Thin SOIMOSFETsPrincipal Investigator
- Principal Investigator
  
  TOYABE Toru
- Project Period (FY)
  2002 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Toyo University
A Study on fully inverted SIMOX MOSFETs
- Principal Investigator
  
  SUGANO Takuo
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Toyo University
Modeling of Coulomb blockade devices and circuits with random structuresPrincipal Investigator
- Principal Investigator
  
  TOYABE Toru
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Toyo University

All 2009 2008 2007 2006

All Journal Article Presentation

[Journal Article] "Characterization of distribution of trap states in silicon-on-insulator layers by front-gate characteristics in n-channel SOI MOSFETs2008
- Author(s)
  K.KAJIWARA, Y.NAKAJIMA, T. HANAJIRI, T.TOYABE, and T.SUGANO
- Journal Title
  
  IEEE trans. Electron Devices 55
  
  Pages: 1702-1707
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560679
[Journal Article] Drive current enhancement in silicon on quartz MOSFETs2008
- Author(s)
  Y. NAKAJIMA, K. SASAKI, T. HANAJIRI, T. TOYABE, T. SUGANO
- Journal Title
  
  IEEE Electron Device Lett. 29
  
  Pages: 944-945
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560679
[Journal Article] Characterization of distribution of trap states in silicon-on-insulator layers by front-gate characteristics in n-channel SOI MOSFETs2008
- Author(s)
  K. KAJIWARA, Y. NAKAJIMA, T. HANAJIRI. T. TOYABE, T. SUGANO
- Journal Title
  
  IEEE trans. Electron Devices 55
  
  Pages: 1702-1707
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560679
[Journal Article] Drive current enhancement in silicon on quartz MOSFETs2008
- Author(s)
  Y. NAKAJIMA, K. SASAKI, T. HANAJIRI, T. TOYABE, and T. SUGANO
- Journal Title
  
  IEEE Electron Device Lett., 29
  
  Pages: 944-945
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560679
[Journal Article] SOI基盤における表面再結合速度の工学的測定による評価 (2)2007
- Author(s)
  宮澤吉康, 中島義賢, 花尻達郎, 小室修二, 鳥谷部達
- Journal Title
  
  応用物理学関係連合講演会講演予稿集 54
  
  Pages: 825-825
- Data Source
  KAKENHI-PROJECT-18560679
[Journal Article] 空乏型SOI MOSFETの有用性(2)2006
- Author(s)
  宮沢健司, 宮澤吉康, 中島義賢, 花尻達郎, 鳥谷部達
- Journal Title
  
  応用物理学会学術講演会講演予稿集 67
  
  Pages: 798-798
- Data Source
  KAKENHI-PROJECT-18560679
[Presentation] Suppression of DIBL in deca-nano SOI MOSFETs by controlling permittivity and thickness of BOX layers2009
- Author(s)
  S. ABE, Y. MIYAZAWA, Y. NAKAJIMA, T. HANAJIRI, T. TOYABE, and T. SUGANO
- Organizer
  Proc. of 10th International Conference on Ultimate Integration of Silicon
- Data Source
  KAKENHI-PROJECT-18560679
[Presentation] Suppression of DIBL in deca-nano SOI MOSFETs by controlling permittivity and thickness of BOX layers2009
- Author(s)
  S. ABE, Y. MIYAZAWA, Y. NAKAJIMA, T. HANAJIRI, T. TOYABE, T. SUGANO
- Organizer
  Proc. of 10th International Conference on Ultimate Integration of Silicon
- Place of Presentation
  Aahen, Germany
- Year and Date
  2009-03-18
- Data Source
  KAKENHI-PROJECT-18560679
[Presentation] Discussion of origins of high-density trap states in SIMOX wafers2009
- Author(s)
  Y. NAKAJIMA, T. TODA, T. HANAJIRI, T. TOYABE, and T. SUGANO
- Organizer
  Proc. of 10th International Conference on Ultimate Integration of Silicon
- Data Source
  KAKENHI-PROJECT-18560679
[Presentation] ゲート酸化膜のトラップがSOIMOSFETトンネル電流に与える影響の評価2009
- Author(s)
  戸田貴大, 中島義賢, 花尻達郎, 鳥谷部達, 菅野卓雄
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-18560679
[Presentation] Improvement of performance of Drain-Source-On-Insulator MOSFETs by using heavily doped-Si region between local BOX regions2009
- Author(s)
  T. YAMADA, Y.MIYAZAWA, Y. NAKAJIMA, T. HANAJIRI, T. TOYABE, and T. SUGANO
- Organizer
  Proc. of 10th International Conference on Ultimate Integration of Silicon
- Data Source
  KAKENHI-PROJECT-18560679
[Presentation] Discussion of origins of high-density trap states in SIMOX wafers2009
- Author(s)
  Y. NAKAJIMA, T. TODA, T. HANAJIRI, T. TOYABE, T. SUGANO
- Organizer
  Proc. of 10th International Conference on Ultimate Integration of Silicon
- Place of Presentation
  Aahen, Germany
- Year and Date
  2009-03-18
- Data Source
  KAKENHI-PROJECT-18560679
[Presentation] Improvement of performance of Drain-Source-On-Insulator MOSFETs by using heavily doped-Si region between local BOX regions2009
- Author(s)
  T. YAMADA, Y. MIYAZAWA, Y. NAKAJIMA, T. HANAJIRI, T. TOYABE, T. SUGANO
- Organizer
  Proc. of 10th International Conference on Ultimate Integration of Silicon
- Place of Presentation
  Aahen, Germany
- Year and Date
  2009-03-18
- Data Source
  KAKENHI-PROJECT-18560679
[Presentation] BOX比誘電率およびBOX膜厚制御によるDIBLの抑制効果2008
- Author(s)
  阿部俊平、宮澤吉康、中島義賢、花尻達郎、鳥谷部達、菅野卓雄
- Organizer
  第69回応用物理学会学術講演会予稿集
- Place of Presentation
  中部大学
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PROJECT-18560679
[Presentation] 選択的BOXを有するSOI MOSFETの有用性2008
- Author(s)
  前川貴信、山田辰哉、宮澤吉康、中島義賢、花尻達郎、鳥谷部達、菅野卓雄
- Organizer
  第54回応用物理学関係連合講演会講演予稿集
- Place of Presentation
  日本大学理工学部
- Year and Date
  2008-03-29
- Data Source
  KAKENHI-PROJECT-18560679
[Presentation] 局所BOX間高不純物ドーピングによるDSOI MOSFETの特性改善2008
- Author(s)
  山田辰哉、宮澤吉康、中島義賢、花尻達郎、鳥谷部達、菅野卓雄
- Organizer
  第69回応用物理学会学術講演会予稿集
- Place of Presentation
  中部大学
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PROJECT-18560679
[Presentation] SOI 基板における表面再結合速度の光学的測定による評価(2)2007
- Author(s)
  宮澤吉康、中島義賢、花尻達郎、小室修二、鳥谷部達
- Organizer
  第54回応用物理学関係連合講演会講演予稿集
- Place of Presentation
  青山学院大学
- Year and Date
  2007-03-28
- Data Source
  KAKENHI-PROJECT-18560679
[Presentation] Advantages of Depletion Type SOI MOSFETs", Abst. of symposium E (Nanodevices and Nanofabrication), 4th Int.2007
- Author(s)
  K. MIYAZAWA, Y. MIYAZAWA, Y.NAKAJIMA, T.HANAJIRI and T.TOYABE
- Organizer
  Conf. on Materials for Advanced Technologies 2007
- Place of Presentation
  Convention Center, Singapore
- Year and Date
  2007-03-03
- Data Source
  KAKENHI-PROJECT-18560679
[Presentation] "Advantages of Depletion Type SOI MOSFETs"2007
- Author(s)
  K. MIYAZAWA, Y. MIYAZAWA, Y. NAKAJIMA, T. HANAJIRI and T. TOYABE
- Organizer
  4th Int. Conf. on Materials for Advanced Technologies 2007
- Place of Presentation
  Convention Center, Singapore
- Year and Date
  2007-07-03
- Data Source
  KAKENHI-PROJECT-18560679
[Presentation] "Qantitative Estimation of Surface Recombination Velocity of SOI wafers by PL Decay Method2007
- Author(s)
  Y.MIYAZAWA, Y.NAKAJIMA,T.HANAJIRI, S.KOMURO and T.TOYABE
- Organizer
  Abst. of symposium E (Nanodevices and Nanofabrication), 4th Int. Conf
- Place of Presentation
  Convention Center, Singapore
- Year and Date
  2007-03-03
- Data Source
  KAKENHI-PROJECT-18560679
[Presentation] "Qantitative Estimation of Surface Recombination Velocity of SOI wafers by PL Decay Method"2007
- Author(s)
  Y. MIYAZAWA, Y. NAKAJIMA, T. HANAJIRI, S. KOMURO and T. TOYABE
- Organizer
  Abst. of symposium E(Nanodevices and Nanofabrication), 4th Int. Conf. on Materials for Advanced Technologies
- Place of Presentation
  Convention Center, Singapore
- Year and Date
  2007-07-03
- Data Source
  KAKENHI-PROJECT-18560679
[Presentation] 空乏型SOI MOSFET の有用性(2)2006
- Author(s)
  宮沢健司、宮澤吉康、中島義賢、花尻達郎、鳥谷部達
- Organizer
  第67回応用物理学会学術講演会講演予稿集
- Place of Presentation
  立命館大学
- Year and Date
  2006-08-31
- Data Source
  KAKENHI-PROJECT-18560679

1. HANAJIRI Tatsuro (30266994)

# of Collaborated Projects: 4 results

# of Collaborated Products: 22 results
2. KASHIWAGI Kunihiro (30058094)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. MORIKAWA Takitaro (80191013)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. SUGANO Takuo (50010707)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. WADA Noboru (40256772)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. ISHIBASI Kouji (30211048)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

TOYABE Toru 鳥谷部 達

TOYABE Tohru 鳥谷部 達

Research Projects

Research Products

Co-Researchers

Exploration of feasible applications of SOQ wafers to various fields

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Spatial and temporal spectroscopy of the luminescence generated by hot carriers in narrow-gap-semiconductor quantum dots

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Quantum Mechanical Simulation of Ultra Thin SOIMOSFETsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

A Study on fully inverted SIMOX MOSFETs

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Modeling of Coulomb blockade devices and circuits with random structuresPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] "Characterization of distribution of trap states in silicon-on-insulator layers by front-gate characteristics in n-channel SOI MOSFETs2008

Author(s)

Journal Title

Data Source

[Journal Article] Drive current enhancement in silicon on quartz MOSFETs2008

Author(s)

Journal Title

Data Source

[Journal Article] Characterization of distribution of trap states in silicon-on-insulator layers by front-gate characteristics in n-channel SOI MOSFETs2008

Author(s)

Journal Title

Data Source

[Journal Article] Drive current enhancement in silicon on quartz MOSFETs2008

Author(s)

Journal Title

Data Source

[Journal Article] SOI基盤における表面再結合速度の工学的測定による評価 (2)2007

Author(s)

Journal Title

Data Source

[Journal Article] 空乏型SOI MOSFETの有用性(2)2006

Author(s)

Journal Title

Data Source

[Presentation] Suppression of DIBL in deca-nano SOI MOSFETs by controlling permittivity and thickness of BOX layers2009

Author(s)

Organizer

Data Source

[Presentation] Suppression of DIBL in deca-nano SOI MOSFETs by controlling permittivity and thickness of BOX layers2009

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Discussion of origins of high-density trap states in SIMOX wafers2009

Author(s)

Organizer

Data Source

[Presentation] ゲート酸化膜のトラップがSOIMOSFETトンネル電流に与える影響の評価2009

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Improvement of performance of Drain-Source-On-Insulator MOSFETs by using heavily doped-Si region between local BOX regions2009

TOYABE Toru 鳥谷部達

TOYABE Tohru 鳥谷部達