ISHIKAWA Hiroyasu 石川博康

… Alternative Names

石川博康イシカワヒロヤス

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Researcher Number	20303696
External Links
Affiliation (Current)	2025: 芝浦工業大学, 工学部, 教授
Affiliation (based on the past Project Information) *help	2009 – 2010: Shibaura Institute of Technology, 工学部, 准教授 2007 – 2008: Nagoya Institute of Technology, 工学研究科, 准教授 2006: 名古屋工業大学, 工学研究科, 助教授 2005: 名古屋工業大学, 大学院工学研究科, 助教授 2004: 名古屋工業大学, 大学院・工学研究科, 講師 2003: 名古屋工業大学, 極微デバイス機能システム研究センター, 助手 2000 – 2002: 名古屋工業大学, 極微構造デバイス研究センター, 助手
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / Applied materials science/Crystal engineering Except Principal Investigator Electron device/Electronic equipment / Electronic materials/Electric materials / Science and Engineering
Keywords	Principal Investigator 有機金属気相成長(MOCVD) / 窒化ガリウム(GaN) / マイクロ・ナノデバイス / ナノ材料 / 電子デバイス・機器 / 結晶成長 / AlN中間層 / AlGaN / GaN / Si基板 … More / 多重量子井戸 / 窒化ガリウムインジウム(GaInN) / ドロップレット / 球状Si / エピタキシャルSi / 陽極化成 / ポーラスSi / XPS / 伝導帯不連続量 / LED / 直列抵抗 / Si / AlN / ジュール熱 / メルトバックエッチング / GaInN / MOCVD / 発光ダイオード / 発光ダイオード(LED) / クラック / 反り / 応力 / GaN中間層 … More Except Principal Investigator GaAs / GaN / 発光ダイオード / Si / opt-electronic integrated circuit / optical waveguide / porous silicon / 多孔性シリコン / 導波路 / 光電子集積回路 / 光導波路 / 多孔質シリコン / Si MESFET / Si electronic device / Si light emitting device / Si tandem solar cell / Si laser / GaN on Si substrate / GaAs on Si substrate / Heteroepitaxy / 直列抵抗 / 発光ダイオード(LED) / GaN中間層 / AlGaN / 有機金属気相成長(MOCVD) / エピタキシャルリフトオフ(ELO) / Si上ヘテロエピタキシー / Si上タンデム太陽電池 / Si上LED / Si上レーザー / GaAs on Si / Si上のヘテロエピタキシー / 転位の不活性化 / 高効率Si上タンデム太陽電池 / Si上青・緑色LED / 大面積Si上GaN基板 / GaN on Si / CaAs on Si / シリコン上化合物半導体 / 二次元電子ガス / ヘテロ接合 / ショットキーダイオード / 高電子移動度トランジスター / X線回折 / フォトルミネッセンス / 量子井戸 / 窒化物半導体 / 四元混晶半導体 / 有機金属気相成長法 / プラズマパッシベーション / GaInN LED / 量子ドットレーザ / GaAs系レーザ / Si基板 / 多波長発光素子 / 多層膜反射鏡 / 欠陥不活性化 / ウエハ接着 / 有機金属気相成長 / Si基板上GaN / Si基板上GaAs / 半導体レーザ / ヘテロエピタキシ Less

Heteroepitaxial growth of GaN on Silicon spheres and its application for high power light emitting diodesPrincipal Investigator
- Principal Investigator
  
  ISHIKAWA Hiroyasu
- Project Period (FY)
  2009 – 2010
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Shibaura Institute of Technology
GaN-based LEDs on nano- and micro-patterned porous Si substratesPrincipal Investigator
- Principal Investigator
  
  ISHIKAWA Hiroyasu
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Nagoya Institute of Technology
Study on quaternary GaN-based optoelectronic devices on large diameter Si substrate
- Principal Investigator
  
  EGAWA Takashi
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Nagoya Institute of Technology
Research on Fundamentals of Opt-Electronic Integral Circuit on Silicon Substrate
- Principal Investigator
  
  JIMBO Takashi, 邵春林
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Nagoya Institute of Technology
低直列抵抗シリコン上窒化物半導体発光素子の研究Principal Investigator
- Principal Investigator
  
  石川博康
- Project Period (FY)
  2002 – 2003
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya Institute of Technology
多波長光デバイス集積化のための異種材料一体化技術
- Principal Investigator
  
  JIMBO Takashi
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya Institute of Technology
超極薄シリコン基板上窒化ガリウムのヘテロエピタキシーPrincipal Investigator
- Principal Investigator
  
  石川博康
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya Institute of Technology
Heteroepitaxy of GaAs and GaN on Si and their device applications
- Principal Investigator
  
  UMENO Masayoshi
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  CHUBU UNIVERSITY
  Nagoya Institute of Technology

All 2011 2010 2009 2008 2007 2006 Other

All Journal Article Presentation Patent

[Journal Article] Reduction of threading dislocations in GaN on in-situ metlback-etched Si substrates2011
- Author(s)
  H.Ishikawa, K.Shimanaka
- Journal Title
  
  J.Crystal Growth Vol.315
  
  Pages: 196-199
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760258
[Journal Article] Reduction of threading dislocations in GaN on in-situ meltback-etched Si substrates2011
- Author(s)
  H.Ishikawa, K.Shimanaka
- Journal Title
  
  J.Crystal Growth
  
  Volume: 315 Pages: 196-199
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760258
[Journal Article] Improved MOCVD growth of GaN on Si-on-porous-silicon substrates2010
- Author(s)
  H.Ishikawa, K.Shimanaka, M.Azfar bin M.Amir, Y.Hara, M.Nakanishi
- Journal Title
  
  Phys.Status Solidi
  
  Volume: C7 Pages: 2049-2051
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760258
[Journal Article] Improved MOCVD growth of GaN on Si-on-porous-silicon substrates2010
- Author(s)
  H.Ishikawa, K.Shimanaka, M.Azfar bin M.Amir, Y.Hara, M.Nakanishi
- Journal Title
  
  phys.stat.solidi C Vol.7
  
  Pages: 2049-2051
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760258
[Journal Article] GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si2008
- Author(s)
  H. Ishikawa, T. Jimbo, T. Egawa
- Journal Title
  
  physica status solidi(c) Vol.5
  
  Pages: 2086-2088
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760235
[Journal Article] MOCVD growth of GaN on porous silicon substrates2008
- Author(s)
  H. Ishikawa, K. Shimanaka, F. Tokura, Y, Hayashi, Y. Hara, M. Nakanishi
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 4900-4903
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760235
[Journal Article] MOCVD growth of GaN on porous silicon substrates2008
- Author(s)
  H. Ishikawa, K. Shimanaka, F. Tokura, Y. Hayashi, Y. Hara, M. Nakanishi
- Journal Title
  
  Journal of Crystal Growth Vol.310
  
  Pages: 4900-4903
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760235
[Journal Article] GaInN light emitting diodes with AlInN/GaN distributed Bragg reflectoron Si2008
- Author(s)
  H. Ishikawa, T. Jimbo, T. Egawa
- Journal Title
  
  physica status solidi (c) 5
  
  Pages: 2086-2088
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760235
[Journal Article] Al composition dependent properties of quaternary AlInGaN Schottky diodes2006
- Author(s)
  Y.Liu, H.Jiang, T.Egawa, B.Zhang, H.Ishikawa
- Journal Title
  
  J. Appl. Phys Vo1.99, No.12
- Data Source
  KAKENHI-PROJECT-18360169
[Journal Article] Novel Quaternary AlInGaN/GaN Heterostructure Field Effect Transistors on Sapphire Substrate2006
- Author(s)
  Y. Liu, T. Egawa H. Jiang, B. Zhang and H. Ishikawa
- Journal Title
  
  Jpn. J. Appl. Phys Vol.45, No.7
  
  Pages: 5728-5731
- NAID
  10017999632
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360169
[Journal Article] Novel Quaternary A1InGaN/GaN Heterostructure Field Effect Transistors on Sapphire Substrate2006
- Author(s)
  Y.Liu, T.Egawa H.Jiang, B.Zhang, H.Ishikawa
- Journal Title
  
  Jpn. J. Appl. Phys Vol.45, No.7
  
  Pages: 5728-5731
- Data Source
  KAKENHI-PROJECT-18360169
[Journal Article] Al composition dependent properties of quaternary AlInGaN Schottky diodes2006
- Author(s)
  Y. Liu, H. Jiang, T. Egawa, B. Zhang and H. Ishikawa
- Journal Title
  
  J. Appl. Phys Vol.99, No.12
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360169
[Patent] 窒素化合物半導体形成用基板、該基板を用いてなる窒化物半導体及びその製造法
- Inventor(s)
  原陽介、中西正美、石川博康
- Industrial Property Rights Holder
  (株)シリコンテクノロジー、名古屋工業大学
- Industrial Property Number
  2007-053129
- Data Source
  KAKENHI-PROJECT-19760235
[Presentation] Si基板上GaInN MQWのPL特性と微細構造の相関2010
- Author(s)
  石川博康、森直人
- Organizer
  2010年春季第57回応用物理学会学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21760258
[Presentation] Reduction of threading dislocations in GaN on in-situ meltback-etched Si substrates2010
- Author(s)
  H.Ishikawa, K.Shimanaka
- Organizer
  15th International Conference on Metal Organic Vapor Phase Epitaxy
- Place of Presentation
  Incline Village, NV, USA
- Year and Date
  2010-05-28
- Data Source
  KAKENHI-PROJECT-21760258
[Presentation] Reduction of threading dislocations in GaN on In-Situ Meltback-Etched Si Substrates2010
- Author(s)
  H.Ishikawa, K.Shimanaka
- Organizer
  15th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XV)
- Place of Presentation
  Incline Village (NV, USA)
- Year and Date
  2010-05-28
- Data Source
  KAKENHI-PROJECT-21760258
[Presentation] Reduction of threading dislocations in GaN on in-situ meltback-etched Si substrates2010
- Author(s)
  H.Ishikawa, N.Mori
- Organizer
  The 8th International Symposium on Semiconductor Light Emitting Devices
- Place of Presentation
  Beijing, China
- Year and Date
  2010-05-21
- Data Source
  KAKENHI-PROJECT-21760258
[Presentation] PL and structuralstudies of GaInN MQWs grown on Si substrates2010
- Author(s)
  H.Ishikawa, N.Mori
- Organizer
  The 8th International Symposium on Semiconductor Light Emitting Devices
- Place of Presentation
  Beijing (China)
- Year and Date
  2010-05-21
- Data Source
  KAKENHI-PROJECT-21760258
[Presentation] デンドライトウェブSi基板上GaInN MQW LEDの試作2009
- Author(s)
  石川博康、森直人、嶋中啓太、原陽介、中西正美
- Organizer
  2009年秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-21760258
[Presentation] Improved MOCVD growth of GaN on Si-on-porous-silicon sbstrates2009
- Author(s)
  H.Ishikawa, K.Shimanaka, M.Azfar bin M.Amir, Y.Hara M.Nakanishi
- Organizer
  The 8th International Conference on Nitride Semiconductors
- Place of Presentation
  済州(韓国)
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PROJECT-21760258
[Presentation] MOCVD growth of GaN on porous silicon substrates2008
- Author(s)
  H. Ishikawa, K. Shimanaka, F. Tokura, Y. Hayashi, Y. Hara, M. Nakanishi
- Organizer
  14th International Conference on Metal Organic Vapor Phase Epitaxy
- Place of Presentation
  Metz
- Year and Date
  2008-06-04
- Data Source
  KAKENHI-PROJECT-19760235
[Presentation] Si基板上GaInN MQW LEDにおけるn型層のドーピング濃度の影響2008
- Author(s)
  森直人、嶋中啓太、広森公一、石川博康
- Organizer
  第55回春季応用物理学会学術講演会
- Place of Presentation
  筑波大学
- Year and Date
  2008-04-01
- Data Source
  KAKENHI-PROJECT-19760235
[Presentation] MOCVD growth of c-axis oriented GaN on Si substrates2008
- Author(s)
  H. Ishikawa, K. Shimanaka, Kouichi Hiromori, Naoto Mori, Tomohiko Morimoto
- Organizer
  Second International Symposium on Growth on III-Nitrides(ISGN-2)
- Place of Presentation
  ラフォーレ修善寺
- Year and Date
  2008-07-08
- Data Source
  KAKENHI-PROJECT-19760235
[Presentation] MOCVD法によるSi(110)基板上へのGaN成長2008
- Author(s)
  嶋中啓太、広森公一、森直人、石川博康
- Organizer
  第55回春季応用物理学会学術講演会
- Place of Presentation
  日本大学
- Year and Date
  2008-03-30
- Data Source
  KAKENHI-PROJECT-19760235
[Presentation] MOCVD growth of c-axis oriented GaN on Si substrates2008
- Author(s)
  H. Ishikawa, K. Shimanaka, Kouichi Hiromori, Naoto Mori, Tomohiko Morimoto
- Organizer
  Second International Symposium on Growth on III-Nitrides (ISGN-2)
- Place of Presentation
  ラフォーレ修善寺
- Year and Date
  2008-07-08
- Data Source
  KAKENHI-PROJECT-19760235
[Presentation] Siエピを施したポーラスSi基板上へのGaNのMOCVD成長2008
- Author(s)
  石川博康、嶋中啓太、M. Azfar .bin M. Amir、原陽介、中西正美
- Organizer
  第55回春季応用物理学会学術講演会
- Place of Presentation
  筑波大学
- Year and Date
  2008-03-31
- Data Source
  KAKENHI-PROJECT-19760235
[Presentation] MOCVD growth of GaN on porous silicon substrates2008
- Author(s)
  H. Ishikawa, K. Shimanaka, F. Tokura, Y, Hayashi, Y. Hara, M. Nakanishi
- Organizer
  14 th International Conference on Metal Organic Vapor Phase Epitaxy
- Place of Presentation
  Metz (フランス)
- Year and Date
  2008-06-04
- Data Source
  KAKENHI-PROJECT-19760235
[Presentation] In-situメルトバックエッチングを施したSi基板上GaN2008
- Author(s)
  石川博康、十倉史行、嶋中啓太
- Organizer
  第55回春季応用物理学会学術講演会
- Place of Presentation
  日本人学
- Year and Date
  2008-03-30
- Data Source
  KAKENHI-PROJECT-19760235
[Presentation] In-situメルトバックエッチングを施したSi基板上GaN2008
- Author(s)
  石川博康、十倉史行、嶋中啓太
- Organizer
  第55回春季応用物理学会学術講演会
- Place of Presentation
  日本大学
- Year and Date
  2008-03-30
- Data Source
  KAKENHI-PROJECT-19760235
[Presentation] MOCVD法によるポーラスSi基板上GaNの諾特性2007
- Author(s)
  嶋中啓太、石川博康、十倉史行、林靖彦、原陽介、中西正美
- Organizer
  応用物理学会結晶工学分科会2007年年末講演会
- Place of Presentation
  学習院大学
- Year and Date
  2007-12-14
- Data Source
  KAKENHI-PROJECT-19760235
[Presentation] ポーラスSi基板上へのGaNのMOCVD成長2007
- Author(s)
  石川博康、嶋中啓太、十倉史行、林靖彦、原陽介、中西正美
- Organizer
  第68回秋季応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PROJECT-19760235
[Presentation] ポーラスSi基板上GaNの諸特性2007
- Author(s)
  嶋中啓太、石川博康、十倉史行、林靖彦、原陽介、中西正美
- Organizer
  Sic及び開連ワイドギャップ半導体研究会
- Place of Presentation
  愛知県女性総合センター
- Data Source
  KAKENHI-PROJECT-19760235
[Presentation] GaInN Light Emitting Diodes with Lattice-Matched AlInN/GaN Distributed Bragg Reflector on Si2007
- Author(s)
  H. Ishikawa, T. Egawa, and T. Jimbo
- Organizer
  7th International Conference on Nitride Semiconductors(ISNS7)
- Place of Presentation
  Lasvegas
- Year and Date
  2007-09-21
- Data Source
  KAKENHI-PROJECT-19760235
[Presentation] GaInN Light Emitting Diodes with Lattice-Matched AlInN/GaN Distributed Bragg Reflector on Si2007
- Author(s)
  H. Ishikawa, T. Egawa, and T. Jimbo
- Organizer
  7th International Conference on Nitride Semiconductors (ISNS7)
- Place of Presentation
  MGM Garand Hotel (Lasvegas, USA)
- Year and Date
  2007-09-21
- Data Source
  KAKENHI-PROJECT-19760235
[Presentation] ポーラスSi基板上GaNの諸特性2007
- Author(s)
  嶋中啓太、石川博康、十倉史行、林靖彦、原陽介、中西正美
- Organizer
  SiC及び関連ワイドギャップ半導体研究会
- Place of Presentation
  愛知県女性総合センター
- Data Source
  KAKENHI-PROJECT-19760235
[Presentation] ポ-ラスSi基板上へのGaNのMOCVD成長2007
- Author(s)
  石川博康、嶋中啓太、十倉史行、林靖彦、原陽介、中西正美
- Organizer
  第68回秋季応用物理学会学術講演会
- Place of Presentation
  北侮道工業大学
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PROJECT-19760235
[Presentation] MOCVD法によるポーラスSi基板上GaNの諸特性2007
- Author(s)
  嶋中啓太、石川博康、十倉史行、林靖彦、原陽介、中西正美
- Organizer
  応用物理学会結晶工学分科会2007年年末講演会
- Place of Presentation
  学習院大学
- Year and Date
  2007-12-14
- Data Source
  KAKENHI-PROJECT-19760235

1. JIMBO Takashi (80093087)

# of Collaborated Projects: 6 results

# of Collaborated Products: 0 results
2. EGAWA Takashi (00232934)

# of Collaborated Projects: 4 results

# of Collaborated Products: 4 results
3. UMENO Masayoshi (90023077)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
4. 林靖彦 (50314084)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
5. 曽我哲夫 (20197007)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
6. IDO Toshiyuki (60023256)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. WAKITA Kouichi (20301640)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 邵春林 (20242828)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. HARA Yousuke

# of Collaborated Projects: 1 results

# of Collaborated Products: 11 results
10. NAKANISHI Masami

# of Collaborated Projects: 1 results

# of Collaborated Products: 11 results

ISHIKAWA Hiroyasu 石川 博康

石川 博康 イシカワ ヒロヤス

Research Projects

Research Products

Co-Researchers

Heteroepitaxial growth of GaN on Silicon spheres and its application for high power light emitting diodesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

GaN-based LEDs on nano- and micro-patterned porous Si substratesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Study on quaternary GaN-based optoelectronic devices on large diameter Si substrate

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Research on Fundamentals of Opt-Electronic Integral Circuit on Silicon Substrate

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

低直列抵抗シリコン上窒化物半導体発光素子の研究Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

多波長光デバイス集積化のための異種材料一体化技術

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

超極薄シリコン基板上窒化ガリウムのヘテロエピタキシーPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Heteroepitaxy of GaAs and GaN on Si and their device applications

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Reduction of threading dislocations in GaN on in-situ metlback-etched Si substrates2011

Author(s)

Journal Title

Data Source

[Journal Article] Reduction of threading dislocations in GaN on in-situ meltback-etched Si substrates2011

Author(s)

Journal Title

Data Source

[Journal Article] Improved MOCVD growth of GaN on Si-on-porous-silicon substrates2010

Author(s)

Journal Title

Data Source

[Journal Article] Improved MOCVD growth of GaN on Si-on-porous-silicon substrates2010

Author(s)

Journal Title

Data Source

[Journal Article] GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si2008

Author(s)

Journal Title

Data Source

[Journal Article] MOCVD growth of GaN on porous silicon substrates2008

Author(s)

Journal Title

Data Source

[Journal Article] MOCVD growth of GaN on porous silicon substrates2008

Author(s)

Journal Title

ISHIKAWA Hiroyasu 石川博康

石川博康イシカワヒロヤス