Ishizaki Hiroki 石崎博基

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ISHIZAKI Hiroki 石崎博基

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Researcher Number	20383507
Other IDs
Affiliation (Current)	2025: 東京科学大学, 総合研究院, 特任教授 2025: 東京科学大学, 科学技術創成研究院, 特任教授
Affiliation (based on the past Project Information) *help	2010 – 2012: 諏訪東京理科大学, システム工学部, 助教
Review Section/Research Field	Except Principal Investigator Electronic materials/Electric materials
Keywords	Except Principal Investigator プラズマ成膜 / MIS構造 / 誘電体物性 / 原子層堆積 / MOS構造 / 酸化アルミニウム / 酸化ハフニウム / 原子層堆積法 / プラズマ酸化 / MOS 構造 / 超薄膜 / 表面・界面物性 / 誘電体薄膜

Low-temperature formation and defect control of high-k dielectrics by PA-ALD
- Principal Investigator
  
  FUKUDA Yukio
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo University of Science, Suwa

All 2013 2012 2011 2010

All Journal Article Presentation

[Journal Article] SpontaneousformationofaluminumgermanateonGe(100)byatomiclayerdepositionwithtrimethylaluminumandmicrowave-generatedatomicoxygen2013
- Author(s)
  Y.Fukuda,H.Ishizaki,Y.Otani,C.Yamamoto,J.Yamanaka,T.Sato,T.Takamatsu,H.Okamoto,andH.Narita
- Journal Title
  
  Appl.Phys.Lett
  
  Volume: 102
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560307
[Journal Article] Thermal Improvement and Stability of Si_3N_4/GeN_x/p- and n-Ge Structures Prepared by Electron-Cyclotron-Resonance Plasma Nitridation and Sputtering at Room Temperature2012
- Author(s)
  Y.Fukuda,H.Okamoto,T.Iwasaki,K.Izumi,Y.Otani,H.Ishizaki,andT.Ono
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 51 Issue: 9R Pages: 090204-090204
- DOI
  10.1143/jjap.51.090204
- NAID
  40019424880
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560307
[Journal Article] Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition2010
- Author(s)
  H. Ishizaki, Y. Otani, Y. Fukuda, T.Sato, T. Takamatsu, and T. Ono
- Journal Title
  
  ECS Trans
  
  Volume: 33 Pages: 227-233
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560307
[Journal Article] Formation of Al_2O_3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique2010
- Author(s)
  H.Ishizaki, M.Iida, Y.Otani, Y.Fukuda, T.Sato, T.Takamatsu, T.Ono
- Journal Title
  
  Electrochemical Society Transactions
  
  Volume: 33(6) Pages: 227-233
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560307
[Presentation] Insituformationofaluminumgermanateinterlayerforhigh-k/Gemetal-oxide-semiconductorstructuresbyatomiclayerdepositionwithtrimethylaluminumandmicrowave-generatedatomicoxygen2013
- Author(s)
  T.Hanada,K.Yanachi,H.Ishizaki,Y.Otani,C.Yamamoto,J.Yamanaka,T.Sato,T.Takamatsu,andY.Fukuda
- Organizer
  the12thInternationalSymposiumonSputtering&PlasmaProcesses
- Place of Presentation
  Kyoto(Japan),tobepresented
- Data Source
  KAKENHI-PROJECT-22560307
[Presentation] InsituformationofhafniumsilicateonSisubstratebyatomiclayerdepositionwithtetrakis(dimethylamino)hafniumandmicrowave-generatedatomicoxygen2013
- Author(s)
  H.Ishizaki,Y.Otani,C.Yamamoto,J.Yamanaka,T.Sato,T.Takamatsu,andY.Fukuda
- Organizer
  the8thInternationalConferenceonSiliconEpitaxyandHeterostructures
- Place of Presentation
  Fukuoka(Japan)
- Data Source
  KAKENHI-PROJECT-22560307
[Presentation] マイクロ波生成リモートプラズマ支援ALD法によるSi基板上へのHfSixOy薄膜の低温形成2012
- Author(s)
  石崎博基、飯田真正、王谷洋平、山本千綾、山中淳二、佐藤哲也、福田幸夫
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-15
- Data Source
  KAKENHI-PROJECT-22560307
[Presentation] 極薄TiOx層を挿入したAl/n-Ge(100)接触特性のPMA処理温度依存性2012
- Author(s)
  和光賢司、花田毅広、石崎博基、王谷洋平、佐藤哲也、岡本浩、小野俊郎、福田幸夫
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-22560307
[Presentation] マイクロ波生成プラズマ支援ALD法によるSi基板上HfO_2薄膜の形成2011
- Author(s)
  飯田真正、石崎博樹、王谷洋平、森田直樹、佐藤哲也、岡本浩、小野俊郎、福田幸夫
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-25
- Data Source
  KAKENHI-PROJECT-22560307
[Presentation] Formation of Al_2O_3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique2010
- Author(s)
  H.Ishizaki, M.Iida, Y.Otani, Y.Fukuda, T.Sato, T.Takamatsu, T.Ono
- Organizer
  218^<th> Electrochemical Society Meeting
- Place of Presentation
  Las Vegas, USA
- Year and Date
  2010-10-15
- Data Source
  KAKENHI-PROJECT-22560307
[Presentation] FormationofAl2O3FilmonSiSubstratebyMicrowaveGeneratedRemotePlasmaAssistedAtomicLayerDepositionTechnique2010
- Author(s)
  H.Ishizaki,YOtani,Y.Fukuda,T.Sato,T.Takamatsu,andT.Ono
- Organizer
  218thElectrochemicalSocietyMeeting
- Place of Presentation
  LasVegas(USA)
- Year and Date
  2010-10-15
- Data Source
  KAKENHI-PROJECT-22560307
[Presentation] マイクロ波リモートプラズマを用いた原子層堆積法によるSi基板上へのAl_2O_3薄膜の形成2010
- Author(s)
  石崎博基、飯田真正、王谷洋平、福田幸夫、佐藤哲也、高松利行、小野俊郎
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-22560307

1. FUKUDA Yukio (50367546)

# of Collaborated Projects: 1 results

# of Collaborated Products: 12 results
2. OTANI Yohei (40434485)

# of Collaborated Projects: 1 results

# of Collaborated Products: 12 results

Ishizaki Hiroki 石崎 博基

ISHIZAKI Hiroki 石崎 博基

Research Projects

Research Products

Co-Researchers

Low-temperature formation and defect control of high-k dielectrics by PA-ALD

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] SpontaneousformationofaluminumgermanateonGe(100)byatomiclayerdepositionwithtrimethylaluminumandmicrowave-generatedatomicoxygen2013

Author(s)

Journal Title

Data Source

[Journal Article] Thermal Improvement and Stability of Si_3N_4/GeN_x/p- and n-Ge Structures Prepared by Electron-Cyclotron-Resonance Plasma Nitridation and Sputtering at Room Temperature2012

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition2010

Author(s)

Journal Title

Data Source

[Journal Article] Formation of Al_2O_3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique2010

Author(s)

Journal Title

Data Source

[Presentation] Insituformationofaluminumgermanateinterlayerforhigh-k/Gemetal-oxide-semiconductorstructuresbyatomiclayerdepositionwithtrimethylaluminumandmicrowave-generatedatomicoxygen2013

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] InsituformationofhafniumsilicateonSisubstratebyatomiclayerdepositionwithtetrakis(dimethylamino)hafniumandmicrowave-generatedatomicoxygen2013

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] マイクロ波生成リモートプラズマ支援ALD法によるSi基板上へのHfSixOy薄膜の低温形成2012

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] 極薄TiOx層を挿入したAl/n-Ge(100)接触特性のPMA処理温度依存性2012

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] マイクロ波生成プラズマ支援ALD法によるSi基板上HfO_2薄膜の形成2011

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Formation of Al_2O_3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique2010

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] FormationofAl2O3FilmonSiSubstratebyMicrowaveGeneratedRemotePlasmaAssistedAtomicLayerDepositionTechnique2010

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] マイクロ波リモートプラズマを用いた原子層堆積法によるSi基板上へのAl_2O_3薄膜の形成2010

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

Ishizaki Hiroki 石崎博基

ISHIZAKI Hiroki 石崎博基