WASHIO KATSUYOSHI 鷲尾勝由

Researcher Number	20417017
Other IDs
Affiliation (based on the past Project Information) *help	2016 – 2017: 東北大学, 工学研究科, 教授 2012 – 2016: 東北大学, 工学(系)研究科(研究院), 教授
Review Section/Research Field	Principal Investigator Crystal engineering / Applied materials science/Crystal engineering Except Principal Investigator Medical systems
Keywords	Principal Investigator 光素子 / 電子デバイス / 量子ドット / 結晶成長 / 機能融合 / カーボン / ゲルマニウム / 自己組織化 / コミュニケーション / 自己組織 … More / ドット / シリコン / 緩和 / サーファクタント … More Except Principal Investigator フェムト秒レーザー / バイオメカニクス / 細胞 / レーザー / 光超音波 Less

Selective Formation of Relaxed Ge Thin Film and Quantum Dot by Sub-Monolayer Carbon MediationPrincipal Investigator
- Principal Investigator
  
  Washio Katsuyoshi
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Crystal engineering
- Research Institution
  Tohoku University
Tomographic imaging of a cell by laser ultrasound microscope with femto-second laser
- Principal Investigator
  
  SAIJO Yoshifumi
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Medical systems
- Research Institution
  Tohoku University
Formation of relaxed Ge thin films by surfactant mediation and its application to devicesPrincipal Investigator
- Principal Investigator
  
  WASHIO KATSUYOSHI
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University

All 2018 2017 2016 2015 2014 2013 Other

All Journal Article Presentation

[Journal Article] Effects of Ge growth rate and temperature on C-mediated Ge dot formation on Si (100) substrate2017
- Author(s)
  Y. Satoh, Y. Itoh, T. Kawashima, K. Washio
- Journal Title
  
  Thin Solid Films
  
  Volume: 621 Pages: 42-46
- DOI
  10.1016/j.tsf.2016.11.032
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03554, KAKENHI-PROJECT-16J01701
[Journal Article] Low-temperature formation of self-assembled Ge quantum dots on Si(100) under high carbon mediation via solid-phase epitaxy2017
- Author(s)
  Y. Itoh, K. Takeshima, T. Kawashima, K. Washio
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 印刷中 Pages: 167-172
- DOI
  10.1016/j.mssp.2016.09.011
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03554, KAKENHI-PROJECT-16J01701
[Journal Article] Formation and Strain Analysis of Stacked Ge Quantum Dots With Strain-Compensating Si1-xCx Spacer2017
- Author(s)
  Y. Itoh, T. Kawashima, K. Washio
- Journal Title
  
  Phys. Status Solidi (c)
  
  Volume: 14 Issue: 12 Pages: 1700197-1700197
- DOI
  10.1002/pssc.201700197
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03554, KAKENHI-PROJECT-16J01701
[Journal Article] Influence of crystallinity of as-deposited Ge film on formation of quantum dot in carbon-mediated solid-phase epitaxy2017
- Author(s)
  K. Takeshima, Y. Itoh, T. Kawashima, K. Washio
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 印刷中 Pages: 178-182
- DOI
  10.1016/j.mssp.2016.11.025
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03554, KAKENHI-PROJECT-16J01701
[Journal Article] Effects of carbon coverage on Ge quantum dots formation on Si(100) using C-Si reaction and transition of Ge growth mode2017
- Author(s)
  K. Yasuta, Y. Itoh, T. Kawashima, K. Washio
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 印刷中 Pages: 173-177
- DOI
  10.1016/j.mssp.2016.11.004
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03554, KAKENHI-PROJECT-16J01701
[Journal Article] Control of growth modes by carbon mediation in formation of Ge quantum dots on Si(100)2017
- Author(s)
  Y. Itoh, T. Kawashima, K. Washio
- Journal Title
  
  IEEE Trans. Nanotechnol.
  
  Volume: 16 Issue: 4 Pages: 595-599
- DOI
  10.1109/tnano.2017.2679721
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03554, KAKENHI-PROJECT-16J01701
[Journal Article] Optimization of Si-C reaction temperature and Ge thickness in C-mediated Ge dot formation2016
- Author(s)
  Y. Satoh, Y. Itoh, T. Kawashima, K. Washio
- Journal Title
  
  Thin Solid Films
  
  Volume: 602 Pages: 29-31
- DOI
  10.1016/j.tsf.2015.08.033
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03554
[Journal Article] Formation of Ge dot or film in Ge/Si heterostructure by using sub-monolayer carbon deposition on top and in-situ post annealing2016
- Author(s)
  Y. Itoh, S. Hatakeyama, T. Kawashima, K. Washio
- Journal Title
  
  Thin Solid Films
  
  Volume: 602 Pages: 32-35
- DOI
  10.1016/j.tsf.2015.07.025
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03554
[Journal Article] Ge dots formation using Si(100)-c(4×4) surface reconstruction2016
- Author(s)
  Y. Satoh, Y. Itoh, T. Kawashima, K. Washio
- Journal Title
  
  J. Cryst. Growth
  
  Volume: 438 Pages: 1-4
- DOI
  10.1016/j.jcrysgro.2015.12.025
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03554
[Journal Article] Self-Assemble Formation of Ge Dots on Si(100) via C/Ge/C/Si Structure2015
- Author(s)
  Y. Itoh, T. Kawashima, K. Washio
- Journal Title
  
  ECS Transactions
  
  Volume: 69 Issue: 10 Pages: 69-73
- DOI
  10.1149/06910.0069ecst
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03554
[Journal Article] Formation of Ge dots on Si(100) using reaction of Ge with sub-monolayer carbon on top2015
- Author(s)
  Yuhki Itoh, Shinji Hatakeyama, Tomoyuki Kawashima, Katsuyoshi Washio
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 印刷中
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24246003
[Journal Article] Transition of carbon binding states on Si(100) depending on substrate temperature and its effect on Ge growth2014
- Author(s)
  Yuhki Itoh, Shinji Hatakeyama, Tomoyuki Kawashima, Katsuyoshi Washio
- Journal Title
  
  Microelectronic Engineering
  
  Volume: 125 Pages: 14-17
- DOI
  10.1016/j.mee.2013.12.023
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24246003
[Journal Article] Mediation effect of sub-monolayer carbon on interfacial mixing in Ge growth on Si(100)2014
- Author(s)
  Yuhki Itoh, Ryo Hayase, Shinji Hatakeyama, Tomoyuki Kawashima, Katsuyoshi Washio
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 11 Issue: 11-12 Pages: 1556-1560
- DOI
  10.1002/pssc.201400032
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24246003
[Journal Article] Structural transition in Ge growth on Si mediated by sub-monolayer carbon2014
- Author(s)
  Yuhki Itoh, Shinji Hatakeyama, Katsuyoshi Washio
- Journal Title
  
  Thin Solid Films
  
  Volume: 557 Pages: 61-65
- DOI
  10.1016/j.tsf.2013.10.095
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24246003
[Journal Article] Formation of Ge quantum dots on Si substrate using consecutive deposition of Ge/C and in situ post annealing2014
- Author(s)
  Shinji Hatakeyama, Yuhki Itoh, Tomoyuki Kawashima, Katsuyoshi Washio
- Journal Title
  
  Microelectronic Engineering
  
  Volume: 125 Pages: 28-32
- DOI
  10.1016/j.mee.2013.12.026
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] 固相成長によるC媒介Ge量子ドットの積層構造の検討2018
- Author(s)
  井上友貴、武島開斗、伊藤友樹、川島知之、鷲尾勝由
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Strain Distribution Analysis of Self-Ordered SiGe Nanodot Structures by Nano Beam Diffraction2018
- Author(s)
  M. A. Schubert, Y. Yamamoto, Y. Itoh, P. Zaumseil, G. Capellini, K. Washio, B. Tillack
- Organizer
  9th International SiGe Technology and Device Meeting (ISTDM 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Self-Ordered Ge Nanodot Fabrication by Reduced Pressure Chemical Vapor Deposition2018
- Author(s)
  Y. Yamamoto, Y. Itoh, P. Zaumseil, M. A. Schubert, G. Capellini, K. Washio, B. Tillack
- Organizer
  Americans International Meeting on Electrochemistry and Solid State Science (AiMES) 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Alignment Control of Self-Ordered Three Dimensional SiGe Nanodots2018
- Author(s)
  Y. Yamamoto, Y. Itoh, P. Zaumseil, M. A. Schubert, G. Capellini, K. Washio, B. Tillack
- Organizer
  9th International SiGe Technology and Device Meeting (ISTDM 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] 原子ステップc 面サファイア基板上のゲルマネン形成2018
- Author(s)
  安田康佑、川島知之、鷲尾勝由
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Formation of multi-stacked Ge quantum dots structure via carbon-mediated solid-phase epitaxy2018
- Author(s)
  K. Takeshima, Y. Itoh, T. Kawashima, K. Washio
- Organizer
  11th International Workshop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Influence of carbon binding states at Ge/Si(100) interface on Ge quantum dot formation via carbon mediation2017
- Author(s)
  K. Yasuta, Y. Itoh, T. Kawashima, K. Washio
- Organizer
  10th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Tohoku Univ., Sendai
- Year and Date
  2017-02-13
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Carbon-mediated Ge quantum dot formation via c(4x4) surface reconstruction and solid-phase epitaxy2017
- Author(s)
  Y. Itoh, T. Kawashima, K. Washio
- Organizer
  10th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Tohoku Univ., Sendai
- Year and Date
  2017-02-13
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] カーボン媒介Ge量子ドットの自己組織化形成法 ―表面再構成と固相成長―2017
- Author(s)
  伊藤友樹、川島知之、鷲尾勝由
- Organizer
  第72回応用物理学会東北支部学術講演会
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Strain-compensated formation of multi-stacked Ge quantum dots utilizing Si1-xCx spacer2017
- Author(s)
  Y. Itoh, T. Kawashima, K. Washio
- Organizer
  European Material Research Society (E-MRS) 2017 Spring Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Formation of Multi-Stacked Ge Quantum Dot by Using Strain-Compensating Si1-xCx Spacer and Carbon Mediation2017
- Author(s)
  Y. Itoh, M Arita, T. Kawashima, K. Washio
- Organizer
  30th International Microprocesses and Nanotechnology Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Ge量子ドットとSiキャップ層の形状と歪へのカーボン被覆の影響2017
- Author(s)
  有田誠, 伊藤友樹, 川島知之, 鷲尾勝由
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜、横浜市
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Siスペーサ層上の固相成長によるカーボン媒介Ge量子ドットの形成2017
- Author(s)
  武島開斗, 伊藤友樹, 川島知之, 鷲尾勝由
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜、横浜市
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Ge量子ドット積層における中間層の歪補償効果に関する検討2017
- Author(s)
  有田誠、伊藤友樹、川島知之、鷲尾勝由
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Strain-compensated formation of multi-stacked Ge quantum dots utilizing Si1-xCx spacer2017
- Author(s)
  Y. Itoh, T. Kawashima, K. Washio
- Organizer
  European Materials Research Society 2017 Spring Meeting
- Place of Presentation
  Strasbourg, France
- Year and Date
  2017-05-22
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Si1-xCx歪補償中間層上のカーボン媒介によるGe量子ドットの自己組織的成長2017
- Author(s)
  伊藤友樹, 川島知之, 鷲尾勝由
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜、横浜市
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Analysis of carbon mediation in Ge quantum dot formation on Si(100) substrate2016
- Author(s)
  Y. Itoh, Y. Satoh, T. Kawashima, K. Washio
- Organizer
  9th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Tohoku Univ., Sendai
- Year and Date
  2016-01-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] 原子ステップc面サファイア基板上Ge(111)薄膜成長の検討2016
- Author(s)
  河口大和, 伊藤友樹, 川島知之, 鷲尾勝由
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学、東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] 固相成長によるC媒介Ge量子ドット形成へのGe堆積温度の効果2016
- Author(s)
  武島開斗, 伊藤友樹, 川島知之, 鷲尾勝由
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学、東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] 堆積中カーボン媒介によるGe量子ドットの低温形成2016
- Author(s)
  武島開斗, 伊藤友樹, 川島知之, 鷲尾勝由
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ、新潟市
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Si(100)基板上C媒介Ge量子ドットの低温固相成長2016
- Author(s)
  伊藤友樹, 武島開斗, 川島知之, 鷲尾勝由
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学、東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Low-Temperature Formation of Ge Quantum Dots on Si(100) via Solid-Phase Epitaxy Using Carbon mediation2016
- Author(s)
  Y. Itoh, K. Takeshima, T. Kawashima, K. Washio
- Organizer
  8th International SiGe Technology and Device Meeting
- Place of Presentation
  Nagoya Univ., Nagoya
- Year and Date
  2016-06-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] 余剰カーボンのC-Si反応Ge量子ドット形成への影響2016
- Author(s)
  安田康佑, 伊藤友樹, 川島知之, 鷲尾勝由
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ、新潟市
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Transition of Ge quantum dot growth mode by using C-mediated Si(100) surface management2016
- Author(s)
  K. Yasuta, Y. Satoh, Y. Itoh, T. Kawashima, K. Washio
- Organizer
  8th International SiGe Technology and Device Meeting
- Place of Presentation
  Nagoya Univ., Nagoya
- Year and Date
  2016-06-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Effect of Crystallinity of As-Deposited Ge Film on Quantum Dot Formation in Carbon-Mediated Solid-Phase Epitaxy2016
- Author(s)
  K. Takeshima, Y. Itoh, T. Kawashima, K. Washio
- Organizer
  7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting 2016 (ISTDM2016)
- Place of Presentation
  Nagoya Univ., Nagoya
- Year and Date
  2016-06-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Control of VW and SK Growth Modes in Ge Quantum Dot Formation on Si(100) Via Carbon Mediation2016
- Author(s)
  Y. Itoh, T. Kawashima, K. Washio
- Organizer
  IEEE 16th International Conference on Nanotechnology (IEEE NANO 2016)
- Place of Presentation
  Sendai International Center, Sendai
- Year and Date
  2016-08-22
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] C-mediated Ge quantum dot growth on Si (100) substrate2016
- Author(s)
  Y. Satoh, Y. Itoh, T. Kawashima, K. Washio
- Organizer
  9th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Tohoku Univ., Sendai
- Year and Date
  2016-01-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] C-Si反応を利用したGe量子ドット形成におけるC堆積量の最適化2016
- Author(s)
  安田康佑, 佐藤佑紀, 伊藤友樹, 川島知之, 鷲尾勝由
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学、東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Formation of multi-stacked Ge quantum dot utilizing carbon-mediated template and its photoluminescence property2016
- Author(s)
  Y. Itoh, T. Kawashima, K. Washio
- Organizer
  29th International Microprocesses and Nanotechnology Conference (MNC 2016)
- Place of Presentation
  ANA Crowne Plaza, Kyoto
- Year and Date
  2016-11-08
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Effect of crystallinity of as-deposited Ge film on quantum dot formation in carbon-mediated solid-phase epitaxy2016
- Author(s)
  K. Takeshima, Y. Itoh, T. Kawashima, K. Washio
- Organizer
  8th International SiGe Technology and Device Meeting
- Place of Presentation
  Nagoya Univ., Nagoya
- Year and Date
  2016-06-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] C-Si 反応を利用したGe 量子ドットの積層構造の発光特性2016
- Author(s)
  伊藤友樹, 川島知之, 鷲尾勝由
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ、新潟市
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Low-Temperature Formation of Ge Quantum Dots on Si(100) via Solid-Phase Epitaxy Using Carbon mediation2016
- Author(s)
  Y. Itoh, K. Takeshima, T. Kawashima, K. Washio
- Organizer
  7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting 2016 (ISTDM2016)
- Place of Presentation
  Nagoya Univ., Nagoya
- Year and Date
  2016-06-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Transition of Ge Quantum Dot Growth Mode by Using C-Mediated Si(100) Surface Management2016
- Author(s)
  K. Yasuta, Y. Satoh, Y. Itoh, T. Kawashima, K. Washio
- Organizer
  7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting 2016 (ISTDM2016)
- Place of Presentation
  Nagoya Univ., Nagoya
- Year and Date
  2016-06-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Si-C結合を利用したGeドットの形成に関する検討2015
- Author(s)
  佐藤佑紀, 伊藤友樹, 川島知之, 鷲尾勝由
- Organizer
  第70回応用物理学会東北支部学術講演会
- Place of Presentation
  ホテルアップルランド、平川市
- Year and Date
  2015-12-03
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Effect of carbon reaction temperature with Si(100) on Ge dot morphology2015
- Author(s)
  Y. Satoh, Y. Itoh, T. Kawashima, K. Washio
- Organizer
  The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9)
- Place of Presentation
  Montreal, Canada
- Year and Date
  2015-05-17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Si-C/Ge-C結合がGeドット形成に及ぼす影響2015
- Author(s)
  伊藤友樹, 川島知之, 鷲尾勝由
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場、名古屋市
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] c面サファイア基板上のGe(111)薄膜成長の検討2015
- Author(s)
  河口大和, 伊藤友樹, 川島知之, 鷲尾勝由
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場、名古屋市
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Si-C結合による表面再構成を用いたGeドット形成におけるGe堆積温度と堆積速度の影響に関する検討2015
- Author(s)
  佐藤佑紀, 伊藤友樹, 川島知之, 鷲尾勝由
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場、名古屋市
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Control of surface morphology in Ge/Si heterostructure by using sub-monolayer carbon deposition on top and in-situ post annealing2015
- Author(s)
  Y. Itoh, S. Hatakeyama, T. Kawashima, K. Washio
- Organizer
  The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9)
- Place of Presentation
  Montreal, Canada
- Year and Date
  2015-05-17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] カーボン媒介によるSi基板上のGe量子ドット成長界面の検討2015
- Author(s)
  伊藤友樹, 佐藤佑紀, 川島知之, 鷲尾勝由
- Organizer
  第70回応用物理学会東北支部学術講演会
- Place of Presentation
  ホテルアップルランド、平川市
- Year and Date
  2015-12-03
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Self-assemble formation of Ge dots by changing C-mediated binding states2015
- Author(s)
  Y. Itoh, T. Kawashima, K. Washio
- Organizer
  228th Electrochemical Society
- Place of Presentation
  Phoenix, USA
- Year and Date
  2015-10-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03554
[Presentation] Si基板上アモルファスGe/Cのアニール処理によるGeドットの形成に関する検討2014
- Author(s)
  畠山真慈, 伊藤友樹, 奥野颯, 川島知之, 鷲尾勝由
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  相模原市
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] Formation of Ge quantum dots using in-situ post annealing amorphous Ge/C structure2014
- Author(s)
  Shinji Hatakeyama, Yuhki Itoh, Tomoyuki Kawashima, Katsuyoshi Washio
- Organizer
  7th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] サブモノレイヤカーボンによるGe/Siミキシングの抑制に関する検討2014
- Author(s)
  伊藤友樹, 早瀬凌, 畠山真慈, 川島知之, 鷲尾勝由
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  相模原市
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] Effect of carbon binding states on Ge growth on Si(100) substrate2014
- Author(s)
  Yuhki Itoh, Shinji Hatakeyama, Tomoyuki Kawashima, Katsuyoshi Washio
- Organizer
  7th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] Si基板上での低温Ge薄膜成長2014
- Author(s)
  早瀬凌, 伊藤友樹, 川島知之, 鷲尾勝由
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  相模原市
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] Carbon-interfered growth of Ge quantum dots on Si substrate2013
- Author(s)
  Shinji Hatakeyama, Yuhki Itoh, Tomoyuki Kawashima, Katsuyoshi Washio
- Organizer
  E-MRS 2013 FALL MEETING
- Place of Presentation
  Warsaw, Porland
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] Structural transition of Ge growth on Si induced by submonolayer carbon2013
- Author(s)
  Yuhki Itoh, Shinji Hatakeyama, Takuya Matsuo, Katsuyoshi Washio
- Organizer
  The 8th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  福岡
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] 異なる結合状態のカーボン・バッファ層を用いた Si基板上Ge薄膜成長2013
- Author(s)
  伊藤友樹, 畠山真慈, 奥野颯, 鷲尾勝由
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  京田辺市
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] Structural transition of Ge growth on Si induced by submonolayer carbon2013
- Author(s)
  Yuhki Itoh, Shinji Hatakeyama, Takuya Matsuo, and Katsuyoshi Washio
- Organizer
  8th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Fukuoka
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] Influence of submonolayer carbon coverage and deposition temperature on Ge growth on Si(100)2013
- Author(s)
  Yuhki Itoh, Shinji Hatakeyama, Tomoyuki Kawashima, Katsuyoshi Washio
- Organizer
  E-MRS 2013 FALL MEETING
- Place of Presentation
  Warsaw, Porland
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] C/Ge/Si(100)構造におけるサブ原子層カーボンとGe成長温度のGe薄膜形成への影響
- Author(s)
  伊藤友樹、畠山真慈、川島知之、鷲尾勝由
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学、平塚市
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] Si-C結合を利用したGeドットの形成温度に関する検討
- Author(s)
  佐藤佑紀、伊藤友樹、川島知之、鷲尾勝由
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学、札幌市
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] Effect of Si(100)c(4×4) surface reconstruction on Ge dots formation
- Author(s)
  Yuhki Satoh, Yuhki Itoh, Tomoyuki Kawashima, Katsuyoshi Washio
- Organizer
  8th International Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Tohoku University, Sendai
- Year and Date
  2015-01-29 – 2015-01-30
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] MBEを用いたSi(100)上2段階Ge薄膜成長における表面平坦化条件の検討
- Author(s)
  早瀬凌、伊藤友樹、川島知之、鷲尾勝由
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学、平塚市
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] アモルファスGe上のサブ原子層カーボンの熱処理を用いたSi(100)基板上のGe薄膜形成
- Author(s)
  青山琢磨、伊藤友樹、畠山真慈、川島知之、鷲尾勝由
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学、平塚市
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] カーボン・サブ単原子バッファ層を用いたSi基板上のGeドットの形成に関する検討
- Author(s)
  畠山真慈、伊藤友樹、松尾拓哉、鷲尾勝由
- Organizer
  応用物理学会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] Effect of carbon reaction temperature with Si(100) on Ge dot morphology
- Author(s)
  Yuhki Satoh, Yuhki Itoh, Tomoyuki Kawashima, Katsuyoshi Washio
- Organizer
  9th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Montreal, Canada
- Year and Date
  2015-05-17 – 2015-05-22
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] Control of surface morphology in Ge/Si heterostructure by using sub-monolayer carbon deposition on top and in-site post annealing
- Author(s)
  Yuhki Itoh, Shinji Hatakeyama, Tomoyuki Kawashima, Katsuyoshi Washio
- Organizer
  9th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Montreal, Canada
- Year and Date
  2015-05-17 – 2015-05-22
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] Geバッファ層とサブ原子層カーボン導入によるGe/Siミキシングの抑制
- Author(s)
  伊藤友樹、早瀬凌、畠山真慈、川島知之、鷲尾勝由
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  札幌市、北海道
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] サブ原子層カーボンを用いたSi基板上Ge薄膜の平坦性向上に関する検討
- Author(s)
  畠山真慈、伊藤友樹、川島知之、鷲尾勝由
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学、札幌市
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] Formation of Ge dots on Si(100) using reaction between Ge and sub-monolayer carbon on top
- Author(s)
  Yuhki Itoh, Tomoyuki Kawashima, Katsuyoshi Washio
- Organizer
  Materials Today Asia 2014
- Place of Presentation
  Hong Kong, China
- Year and Date
  2014-12-09 – 2014-12-12
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] サブ原子層カーボンを用いたGeドットのSi-C結合形成温度依存性に関する検討
- Author(s)
  佐藤佑紀、伊藤友樹、川島知之、鷲尾勝由
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学、平塚市
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] Effect of sub-monolayer carbon on Ge/Si(100) layer on Ge dot formation
- Author(s)
  Yuhki Itoh, Shinji Hatakeyama, Tomoyuki Kawashima, Katsuyoshi Washio
- Organizer
  8th International Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Tohoku University, Sendai
- Year and Date
  2015-01-29 – 2015-01-30
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] Formation of Ge dots using stable Si(100)c(4×4) surface reconstructed by Si-C heterodimers
- Author(s)
  Yuhki Satoh, Yuhki Itoh, Tomoyuki Kawashima, Katsuyoshi Washio
- Organizer
  Materials Today Asia 2014
- Place of Presentation
  Hong Kong, China
- Year and Date
  2014-12-09 – 2014-12-12
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] MBEを用いたSi(100)基板上の2段階Ge薄膜成長
- Author(s)
  早瀬凌、伊藤友樹、川島知之、鷲尾勝由
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学、札幌市
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] Effect of sub-monolayer carbon mediation on interfacial mixing in Ge growth on Si(100)
- Author(s)
  Yuhki Itoh, Shinji Hatakeyama, Ryo Hayase, Tomoyuki Kawashima, Katsuyoshi Washio
- Organizer
  E-MRS 2014 Spring Meeting
- Place of Presentation
  Lille, France
- Year and Date
  2014-05-26 – 2014-05-30
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] Si-C結合によるc(4×4)表面再構成を利用したGeドットの堆積量依存性に関する検討
- Author(s)
  佐藤佑紀、伊藤友樹、川島知之、鷲尾勝由
- Organizer
  第69回応用物理学会東北支部学術講演会
- Place of Presentation
  東北大学、仙台市
- Year and Date
  2014-12-04 – 2014-12-05
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] サブ原子層カーボン/Geの反応を利用したSi(100)基板上Geドットの形成
- Author(s)
  伊藤友樹、川島知之、鷲尾勝由
- Organizer
  第69回応用物理学会東北支部学術講演会
- Place of Presentation
  東北大学、仙台市
- Year and Date
  2014-12-04 – 2014-12-05
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] Effects of sub-monolayer carbon reaction at Si surface on Ge dot growth on Si(100)
- Author(s)
  Yuhki Itoh, Shinji Hatakeyama, Tomoyuki Kawashima, Katsuyoshi Washio
- Organizer
  15th IUMRS-ICA
- Place of Presentation
  Fukuoka University, Fukuoka
- Year and Date
  2014-08-24 – 2014-08-30
- Data Source
  KAKENHI-PROJECT-24246003
[Presentation] カーボン・サーファクタントを用いたSi基板上の緩和Ge薄膜成長の検討
- Author(s)
  伊藤友樹、畠山真慈、松尾拓哉、鷲尾勝由
- Organizer
  応用物理学会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24246003

1. SAKURABA Masao (30271993)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
2. SAIJO Yoshifumi (00292277)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. MATSUURA Yuji (10241530)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. 川島知之 (40708450)

# of Collaborated Projects: 1 results

# of Collaborated Products: 48 results

WASHIO KATSUYOSHI 鷲尾 勝由

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Research Products

Co-Researchers

Selective Formation of Relaxed Ge Thin Film and Quantum Dot by Sub-Monolayer Carbon MediationPrincipal Investigator

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Tomographic imaging of a cell by laser ultrasound microscope with femto-second laser

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Formation of relaxed Ge thin films by surfactant mediation and its application to devicesPrincipal Investigator

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[Journal Article] Effects of Ge growth rate and temperature on C-mediated Ge dot formation on Si (100) substrate2017

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[Journal Article] Low-temperature formation of self-assembled Ge quantum dots on Si(100) under high carbon mediation via solid-phase epitaxy2017

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[Journal Article] Formation and Strain Analysis of Stacked Ge Quantum Dots With Strain-Compensating Si1-xCx Spacer2017

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[Journal Article] Influence of crystallinity of as-deposited Ge film on formation of quantum dot in carbon-mediated solid-phase epitaxy2017

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[Journal Article] Effects of carbon coverage on Ge quantum dots formation on Si(100) using C-Si reaction and transition of Ge growth mode2017

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[Journal Article] Control of growth modes by carbon mediation in formation of Ge quantum dots on Si(100)2017

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[Journal Article] Optimization of Si-C reaction temperature and Ge thickness in C-mediated Ge dot formation2016

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[Journal Article] Formation of Ge dot or film in Ge/Si heterostructure by using sub-monolayer carbon deposition on top and in-situ post annealing2016

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[Journal Article] Ge dots formation using Si(100)-c(4×4) surface reconstruction2016

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[Journal Article] Self-Assemble Formation of Ge Dots on Si(100) via C/Ge/C/Si Structure2015

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[Journal Article] Formation of Ge dots on Si(100) using reaction of Ge with sub-monolayer carbon on top2015

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[Journal Article] Transition of carbon binding states on Si(100) depending on substrate temperature and its effect on Ge growth2014

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WASHIO KATSUYOSHI 鷲尾勝由