Kobayashi Takuma 小林拓真

Researcher Number	20827711
Other IDs	https://orcid.org/0000-0002-2755-5079
Affiliation (Current)	2026: 大阪大学, 大学院工学研究科, 准教授
Affiliation (based on the past Project Information) *help	2024 – 2025: 大阪大学, 大学院工学研究科, 准教授 2022 – 2023: 大阪大学, 大学院工学研究科, 助教 2021: 大阪大学, 工学研究科, 助教
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related / Medium-sized Section 21:Electrical and electronic engineering and related fields / 0302:Electrical and electronic engineering and related fields Except Principal Investigator Broad Section D
Keywords	Principal Investigator MOSFET / 界面欠陥 / GaN / SiC / 信頼性 / 第一原理計算 / 光応答 / 波長変換 / 単一光子 / スピン量子光源 … More / 色中心 / キャリア散乱 / 移動度 / 膜中欠陥 / 電界効果トランジスタ / 界面準位 / トラップ / MOS構造 / 絶縁膜 / 二酸化ケイ素 / 窒化ガリウム / SiO2 / 窒化 / パワーデバイス / 電界効果トランジスタ（MOSFET） / 二酸化珪素（SiO2） / 炭化珪素（SiC） … More Except Principal Investigator 界面科学 / MOS構造 / パワーデバイス / 炭化珪素 Less

Wavelength conversion of single photons from SiC color centers towards realization of a quantum networkPrincipal Investigator
- Principal Investigator
  
  小林拓真
- Project Period (FY)
  2025 – 2027
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  The University of Osaka
Clarification of the origin of interface defects in GaN MOS structures based on measurements and theoretical calculations of photoexcitation dynamicsPrincipal Investigator
- Principal Investigator
  
  小林拓真
- Project Period (FY)
  2025 – 2026
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  The University of Osaka
Deep Insights into Heterointerface Engineering in Silicon Carbide based Devices
- Principal Investigator
  
  渡部平司
- Project Period (FY)
  2024 – 2028
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Review Section
  
  Broad Section D
- Research Institution
  The University of Osaka
Study of carrier scattering mechanisms in gallium nitride MOS devicesPrincipal Investigator
- Principal Investigator
  
  Kobayashi Takuma
- Project Period (FY)
  2023 – 2024
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Osaka University
Elucidation of defects at SiC/SiO2 interfaces by electrical and spectroscopic measurementsPrincipal Investigator
- Principal Investigator
  
  Kobayashi Takuma
- Project Period (FY)
  2021 – 2022
- Research Category
  
  Grant-in-Aid for Research Activity Start-up
- Review Section
  
  0302:Electrical and electronic engineering and related fields
- Research Institution
  Osaka University

All 2025 2024 2023 2022 2021

All Journal Article Presentation

[Journal Article] Comprehensive research on nitrided SiO2/SiC interfaces by high-temperature nitric oxide annealing formed on basal and non-basal planes2025
- Author(s)
  Watanabe Heiji、Kobayashi Takuma、Iwamoto Hayato、Nakanuma Takato、Hirai Hirohisa、Sometani Mitsuru
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 64 Issue: 1 Pages: 010801-010801
- DOI
  10.35848/1347-4065/ada03c
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24H00046, KAKENHI-PROJECT-23KJ1501
[Journal Article] GaOx interlayer-originated hole traps in SiO2/p-GaN MOS structures and their suppression by low-temperature gate dielectric deposition2025
- Author(s)
  Hara Masahiro、Kobayashi Takuma、Nozaki Mikito、Watanabe Heiji
- Journal Title
  
  Applied Physics Letters
  
  Volume: 126 Issue: 2 Pages: 022113-022113
- DOI
  10.1063/5.0246368
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23K13367, KAKENHI-PROJECT-24KJ0142
[Journal Article] Insight into the energy level structure and luminescence process of color centers at SiO2/SiC interfaces2025
- Author(s)
  Onishi Kentaro、Nakanuma Takato、Toyama Haruko、Tahara Kosuke、Kutsuki Katsuhiro、Watanabe Heiji、Kobayashi Takuma
- Journal Title
  
  APL Materials
  
  Volume: 13 Issue: 2 Pages: 021119-021119
- DOI
  10.1063/5.0253294
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-24H00046, KAKENHI-PROJECT-23KJ1501
[Journal Article] Gate stress-induced mobility degradation in NO-nitrided SiC(0001) MOSFETs2024
- Author(s)
  Kobayashi Takuma、Koyanagi Kaho、Hirai Hirohisa、Sometani Mitsuru、Okamoto Mitsuo、Watanabe Heiji
- Journal Title
  
  Applied Physics Letters
  
  Volume: 125 Issue: 25 Pages: 252101-252101
- DOI
  10.1063/5.0245907
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-24H00046
[Journal Article] Impact of post-deposition annealing on SiO2/SiC interfaces formed by plasma nitridation of the SiC surface and SiO2 deposition2024
- Author(s)
  Fujimoto Hiroki、Kobayashi Takuma、Watanabe Heiji
- Journal Title
  
  Applied Physics Express
  
  Volume: 17 Issue: 11 Pages: 116503-116503
- DOI
  10.35848/1882-0786/ad918f
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-24H00046, KAKENHI-PROJECT-24KJ1553
[Journal Article] Impacts of post-deposition annealing on hole trap generation at SiO2/p-type GaN MOS interfaces2024
- Author(s)
  Tomigahara Kazuki、Hara Masahiro、Nozaki Mikito、Kobayashi Takuma、Watanabe Heiji
- Journal Title
  
  Applied Physics Express
  
  Volume: 17 Issue: 8 Pages: 081002-081002
- DOI
  10.35848/1882-0786/ad65b3
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23K13367, KAKENHI-PROJECT-24KJ0142
[Journal Article] Passivation of hole traps in SiO2/GaN metal-oxide-semiconductor devices by high-density magnesium doping2023
- Author(s)
  Mizobata Hidetoshi、Nozaki Mikito、Kobayashi Takuma、Shimura Takayoshi、Watanabe Heiji
- Journal Title
  
  Applied Physics Express
  
  Volume: 16 Issue: 10 Pages: 105501-105501
- DOI
  10.35848/1882-0786/acfc95
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K13367
[Journal Article] Separate evaluation of interface and oxide hole traps in SiO2/GaN MOS structures with below- and above-gap light excitation2023
- Author(s)
  Kobayashi Takuma、Tomigahara Kazuki、Nozaki Mikito、Shimura Takayoshi、Watanabe Heiji
- Journal Title
  
  Applied Physics Express
  
  Volume: 17 Issue: 1 Pages: 011003-011003
- DOI
  10.35848/1882-0786/ad120a
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23K13367
[Journal Article] Impact of nitridation on the reliability of 4H-SiC(11-20) MOS devices2022
- Author(s)
  T. Nakanuma, T. Kobayashi, T. Hosoi, M. Sometani, M. Okamoto, A. Yoshigoe, T. Shimura and H. Watanabe
- Journal Title
  
  Applied Physics Express
  
  Volume: 15 Issue: 4 Pages: 041002-041002
- DOI
  10.35848/1882-0786/ac5ace
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21K18170, KAKENHI-PROJECT-21K20429, KAKENHI-PROJECT-20K05338
[Journal Article] Degradation of NO-nitrided SiC MOS interfaces by excimer ultraviolet light irradiation2022
- Author(s)
  Fujimoto Hiroki、Kobayashi Takuma、Sometani Mitsuru、Okamoto Mitsuo、Shimura Takayoshi、Watanabe Heiji
- Journal Title
  
  Applied Physics Express
  
  Volume: 15 Issue: 10 Pages: 104004-104004
- DOI
  10.35848/1882-0786/ac926c
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K20429
[Presentation] Thermal generation rate of hole traps in GaN MOS structures2025
- Author(s)
  M. Hara, K. Hirahara, M. Nozaki, T. Kobayashi, and H. Watanabe
- Organizer
  The 15th International Conference on Nitride Semiconductors (ICNS 15)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K13367
[Presentation] 熱処理によるSiO2/p型GaN MOS界面正孔トラップの生成速度2025
- Author(s)
  原征大, 平原賢治, 野崎幹人, 小林拓真, 渡部平司
- Organizer
  2025年第72回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K13367
[Presentation] Tunneling current in Schottky structures formed on heavily doped n-type GaN2025
- Author(s)
  M. Hara, M. Nozaki, T. Kobayashi, and H. Watanabe
- Organizer
  The 15th International Conference on Nitride Semiconductors (ICNS 15)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K13367
[Presentation] Reduction of hole traps in SiO2/GaN MOS structures by properly designing the oxide interlayer2024
- Author(s)
  H. Mizobata, M. Hara, M. Nozaki, T. Kobayashi and H. Watanabe
- Organizer
  12th International Workshop on Nitride Semiconductors (IWN 2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K13367
[Presentation] Impacts of thermal oxidation and forming gas annealing on surface morphology of SiC(0001)2024
- Author(s)
  S. Kamihata, H. Fujimoto, T. Kobayashi, and H. Watanabe
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24H00046
[Presentation] 正孔捕獲を抑制した高Mg濃度p型GaN MOS構造の熱安定2024
- Author(s)
  阪上優一, 小林拓真, 冨ケ原一樹, 野﨑幹人, 渡部平司
- Organizer
  2024年第85回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K13367
[Presentation] 低温PECVDにより作製したSiO2/p型GaN MOS構造における正孔トラップの評価2024
- Author(s)
  原征大, 小林拓真, 溝端秀聡, 野崎幹人, 渡部平司
- Organizer
  先進パワー半導体分科会第11回講演会
- Data Source
  KAKENHI-PROJECT-23K13367
[Presentation] Comprehensive Research on Nitrided SiO2/4H-SiC Interfaces2024
- Author(s)
  H. Watanabe, T. Kobayashi
- Organizer
  International Conference on Solid State Devices and Materials (SSDM 2024)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24H00046
[Presentation] 広温度範囲に亘るSiO2/SiC界面発光中心の形成過程の調査2024
- Author(s)
  兼子悠, 中沼貴澄, 遠山晴子, 田原康佐, 朽木克博, 渡部平司, 小林拓真
- Organizer
  第85回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-24H00046
[Presentation] 負電圧ゲートストレス印加によるSiC MOSFETのチャネル移動度劣化2024
- Author(s)
  八軒慶慈, 小林拓真, 平井悠久, 染谷満, 岡本光央, 渡部平司
- Organizer
  第85回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-24H00046
[Presentation] 熱処理に対する高Mg濃度p型GaN MOS構造の安定性評価2024
- Author(s)
  阪上優一, 小林拓真, 冨ケ原一樹, 野崎幹人, 渡部平司
- Organizer
  先進パワー半導体分科会第11回講演会
- Data Source
  KAKENHI-PROJECT-23K13367
[Presentation] NO窒化SiC(0-33-8) MOS構造の界面特性及び信頼性評価2024
- Author(s)
  岩本隼登, 小林拓真, 平井悠久, 染谷満, 岡本光央, 渡部平司
- Organizer
  第85回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-24H00046
[Presentation] Impurity-vacancy complexes in 4H-SiC: stability and properties2024
- Author(s)
  T. Kobayashi, S. Iwamoto and H. Watanabe
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24H00046
[Presentation] PECVD-SiO2の成膜温度がp型GaN MOS界面正孔トラップに与える影響2024
- Author(s)
  原征大, 小林拓真, 溝端秀聡, 野崎幹人, 渡部平司
- Organizer
  2024年第85回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K13367
[Presentation] SiO2/SiC界面発光中心の発光強度の酸化温度・酸素分圧依存性2024
- Author(s)
  大西健太郎, 中沼貴澄, 遠山晴子, 田原康佐, 朽木克博, 渡部平司, 小林拓真
- Organizer
  第85回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-24H00046
[Presentation] Suppression of luminescent spots at SiO2/SiC interfaces by thermal oxidation at low oxygen partial pressure2024
- Author(s)
  K. Onishi, T. Nakanuma, H. Toyama, K. Tahara, K. Kutsuki, H. Watanabe, and T. Kobayashi
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24H00046
[Presentation] Control over the density of single photon emitters at SiO2/SiC interfaces: CO2 vs. Ar annealing2024
- Author(s)
  T. Nakanuma, K. Tahara, H. Toyama, K. Kutsuki, H. Watanabe and T. Kobayashi
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24H00046
[Presentation] 表面界面反応制御に基づく高品質SiC MOS界面の形成2024
- Author(s)
  藤本博貴，小林拓真，渡部平司
- Organizer
  先進パワー半導体分科会第11回講演会
- Invited
- Data Source
  KAKENHI-PROJECT-24H00046
[Presentation] Impact of Post Deposition Annealing on SiO2/SiC Structures Formed by Plasma Nitridation of the SiC Surface2024
- Author(s)
  H. Fujimoto, T. Kobayashi, and H. Watanabe
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24H00046
[Presentation] 超高温酸化プロセスによるSiC MOSFETの高温高電界ストレス耐性の向上2024
- Author(s)
  陳強, 小林拓真, 平井悠久, 染谷満, 岡本光央, 渡部平司
- Organizer
  先進パワー半導体分科会第11回講演会
- Data Source
  KAKENHI-PROJECT-24H00046
[Presentation] SiO2堆積後熱処理によるp型GaN MOS界面正孔トラップ生成2024
- Author(s)
  原征大, 冨ケ原一樹, 野崎幹人, 小林拓真, 渡部平司
- Organizer
  2024年第85回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K13367
[Presentation] 高温酸化プロセスによるSiC MOSFETのゲートストレス耐性向上2024
- Author(s)
  陳強, 小林拓真, 平井悠久, 染谷満, 岡本光央, 渡部平司
- Organizer
  第85回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-24H00046
[Presentation] Investigation of oxygen-related defects in 4H-SiC from ab initio calculations2024
- Author(s)
  S. Iwamoto, H. Watanabe and T. Kobayashi
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24H00046
[Presentation] 熱酸化及び水素エッチングによるSiC(0001)表面構造の変化2024
- Author(s)
  神畠真治, 小林拓真, 渡部平司
- Organizer
  先進パワー半導体分科会第11回講演会
- Data Source
  KAKENHI-PROJECT-24H00046
[Presentation] Insight into the mobility-limiting factors of SiC MOSFETs: the impact of gate bias stress2024
- Author(s)
  T. Kobayashi, K. Koyanagi, H. Hirai, M. Sometani, M. Okamoto and H. Watanabe
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM 2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24H00046
[Presentation] SiC 表面のプラズマ窒化と絶縁膜堆積により形成した SiO2/SiC 構造に対する後熱処理の効果2024
- Author(s)
  藤本博貴, 小林拓真, 渡部平司
- Organizer
  第85回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-24H00046
[Presentation] 第一原理計算を用いた4H-SiC中不純物-空孔ペアに関する包括的調査2024
- Author(s)
  岩本蒼典, 渡部平司, 小林拓真
- Organizer
  第85回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-24H00046
[Presentation] SiC(0001)表面モフォロジーに対する酸化及び水素エッチングの影響2024
- Author(s)
  神畠真治, 小林拓真, 渡部平司
- Organizer
  第85回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-24H00046
[Presentation] SiO2/SiC界面発光中心の密度に対する熱処理雰囲気及び時間の影響2024
- Author(s)
  中沼貴澄, 田原康佐, 遠山晴子, 朽木克博, 渡部平司, 小林拓真
- Organizer
  第85回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-24H00046
[Presentation] 高温ゲートストレス印加による SiC MOSFET のチャネル移動度劣化機構2024
- Author(s)
  八軒慶慈, 小林拓真, 平井悠久, 染谷満, 岡本光央, 渡部平司
- Organizer
  先進パワー半導体分科会第11回講演会
- Data Source
  KAKENHI-PROJECT-24H00046
[Presentation] Below-gap 光照射による n 型 GaN MOS 界面の正孔トラップ評価2023
- Author(s)
  冨ケ原一樹, 小林拓真, 野﨑幹人，志村考功，渡部平司
- Organizer
  先進パワー半導体分科会第10回講演会
- Data Source
  KAKENHI-PROJECT-23K13367
[Presentation] Hole Traps in SiO2/GaN MOS structures Evaluated by Below-gap Light Illumination2023
- Author(s)
  K. Tomigahara, T. Kobayashi, M.Nozaki, T. Shimura, and H. Watanabe
- Organizer
  14th International Conference on Nitride Semiconductors (ICNS-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K13367
[Presentation] Effects of doped Mg concentrations on the reduction of hole traps in the vicinity of the SiO2/p-GaN MOS interface2023
- Author(s)
  H. Mizobata, M. Nozaki, T. Kobayashi, M. Nozaki, T. Shimura, and H. Watanabe
- Organizer
  14th International Conference on Nitride Semiconductors (ICNS-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K13367
[Presentation] SiO2/GaOx/GaN 構造の固定電荷に対するポストアニールの効果2023
- Author(s)
  荒木唯衣, 小林拓真, 冨ケ原一樹, 野﨑幹人, 志村考功, 渡部平司
- Organizer
  先進パワー半導体分科会第10回講演会
- Data Source
  KAKENHI-PROJECT-23K13367
[Presentation] Nitridation-induced degradation of SiC(1-100) MOS devices2022
- Author(s)
  T. Kobayashi, T. Nakanuma, A. Suzuki, M. Sometani, M. Okamoto, A.Yoshigoe, T. Shimura, H. Watanabe
- Organizer
  19th International Conference on Silicon Carbide and Related Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K20429
[Presentation] NO 窒化 SiO2/SiC(11-20) 界面へのエキシマ紫外光照射の影響2022
- Author(s)
  藤本博貴, 小林拓真, 染谷満, 岡本光央, 志村考功, 渡部平司
- Organizer
  応用物理学会　先進パワー半導体分科会　第9回講演会
- Data Source
  KAKENHI-PROJECT-21K20429
[Presentation] NO 窒化 SiC(1-100) MOS デバイスのリーク伝導機構2022
- Author(s)
  鈴木亜沙人, 中沼貴澄, 小林拓真, 染谷満, 岡本光央, 吉越章隆, 志村考功, 渡部平司
- Organizer
  応用物理学会　先進パワー半導体分科会　第9回講演会
- Data Source
  KAKENHI-PROJECT-21K20429
[Presentation] Degradation of NO-Nitrided SiC MOS Devices Due to Excimer Ultraviolet Light Illumination2022
- Author(s)
  H. Fujimoto, T. Kobayashi, M. Sometani, M. Okamoto, T. Shimura, H. Watanabe
- Organizer
  19th International Conference on Silicon Carbide and Related Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K20429
[Presentation] NO窒化処理を施した非基底面SiC MOSデバイスの信頼性2022
- Author(s)
  中沼貴澄, 小林拓真 ,染谷満, 岡本光央, 吉越章隆, 細井卓治, 志村考功, 渡部平司
- Organizer
  電気学会電子デバイス研究会
- Invited
- Data Source
  KAKENHI-PROJECT-21K20429
[Presentation] 紫外光照射によるNO窒化4H-SiC(11-20) MOSデバイスの電気特性劣化2022
- Author(s)
  藤本博貴, 小林拓真, 染谷満, 岡本光央, 志村孝功, 渡部平司
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K20429
[Presentation] Analysis of leakage current mechanisms in NO-nitrided SiC(1-100) MOS devices2022
- Author(s)
  A. Suzuki, T. Nakanuma, T. Kobayashi, M. Sometani, M. Okamoto, A. Yoshigoe, T. Shimura, H. Watanabe
- Organizer
  2022 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K20429
[Presentation] NO窒化SiC MOSデバイスへのエキシマ紫外光照射の影響2022
- Author(s)
  藤本博貴, 小林拓真, 染谷満, 岡本光央, 細井卓治, 志村孝功, 渡部平司
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21K20429
[Presentation] Reliability Issues in Nitrided SiC MOS Devices2022
- Author(s)
  T. Kobayashi, T. Nakanuma, A. Suzuki, M. Sometani, M. Okamoto, A. Yoshigoe, T. Hosoi, T. Shimura, H. Watanabe
- Organizer
  9th International Symposium on Control of Semiconductor Interfaces
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K20429
[Presentation] NO窒化処理を施した4H-SiC(11-20) MOSデバイスの絶縁性および閾値安定性の評価2022
- Author(s)
  中沼貴澄, 岩片悠, 小林拓真, 染谷満, 岡本光央, 吉越章隆, 細井卓治, 志村考功, 渡部平司
- Organizer
  電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－（第27回研究会）
- Data Source
  KAKENHI-PROJECT-21K20429
[Presentation] NO窒化を施した非基底面上SiO2/SiC構造のバンドアライメント評価2022
- Author(s)
  中沼貴澄, 小林拓真, 染谷満, 岡本光央, 吉越章隆, 志村考功, 渡部平司
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K20429
[Presentation] NO窒化処理を施したSiC(1-100) MOSデバイスのリーク電流特性2022
- Author(s)
  鈴木亜沙人, 小林拓真, 染谷満, 岡本光央, 志村考功, 渡部平司
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K20429
[Presentation] Investigation of reliability of NO nitrided SiC(1-100) MOS devices2022
- Author(s)
  Takato Nakanuma, Asato Suzuki, Yu Iwakata, Takuma Kobayashi, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
- Organizer
  IEEE International Reliability Physics Symposium (IRPS 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K20429
[Presentation] エキシマ紫外光照射によるNO窒化SiC MOSデバイスの特性劣化2021
- Author(s)
  藤本博貴, 小林拓真, 染谷満, 岡本光央, 細井卓治, 志村考功, 渡部平司
- Organizer
  応用物理学会先進パワー半導体分科会第8回講演会
- Data Source
  KAKENHI-PROJECT-21K20429

1. 渡部平司 (90379115)

# of Collaborated Projects: 1 results

# of Collaborated Products: 26 results
2. 染谷満 (60783644)

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
3. 生田力三 (90626475)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Kobayashi Takuma 小林 拓真

Research Projects

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Co-Researchers

Wavelength conversion of single photons from SiC color centers towards realization of a quantum networkPrincipal Investigator

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Clarification of the origin of interface defects in GaN MOS structures based on measurements and theoretical calculations of photoexcitation dynamicsPrincipal Investigator

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Deep Insights into Heterointerface Engineering in Silicon Carbide based Devices

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Study of carrier scattering mechanisms in gallium nitride MOS devicesPrincipal Investigator

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Elucidation of defects at SiC/SiO2 interfaces by electrical and spectroscopic measurementsPrincipal Investigator

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[Journal Article] Comprehensive research on nitrided SiO2/SiC interfaces by high-temperature nitric oxide annealing formed on basal and non-basal planes2025

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[Journal Article] GaOx interlayer-originated hole traps in SiO2/p-GaN MOS structures and their suppression by low-temperature gate dielectric deposition2025

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[Journal Article] Insight into the energy level structure and luminescence process of color centers at SiO2/SiC interfaces2025

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[Journal Article] Gate stress-induced mobility degradation in NO-nitrided SiC(0001) MOSFETs2024

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[Journal Article] Impact of post-deposition annealing on SiO2/SiC interfaces formed by plasma nitridation of the SiC surface and SiO2 deposition2024

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[Journal Article] Impacts of post-deposition annealing on hole trap generation at SiO2/p-type GaN MOS interfaces2024

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[Journal Article] Passivation of hole traps in SiO2/GaN metal-oxide-semiconductor devices by high-density magnesium doping2023

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[Journal Article] Separate evaluation of interface and oxide hole traps in SiO2/GaN MOS structures with below- and above-gap light excitation2023

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[Journal Article] Impact of nitridation on the reliability of 4H-SiC(11-20) MOS devices2022

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[Journal Article] Degradation of NO-nitrided SiC MOS interfaces by excimer ultraviolet light irradiation2022

Kobayashi Takuma 小林拓真