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SAHA NILOY CHANDRA  SAHA・NILOY CHANDRA

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SAHA・NILOY CHANDRA  サハ・ニロイ チャンドラ

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Researcher Number 20933089
Other IDs
Affiliation (Current) 2026: 佐賀大学, 理工学部, 助教
Affiliation (based on the past Project Information) *help 2022 – 2025: 佐賀大学, 理工学部, 助教
Review Section/Research Field
Principal Investigator
Basic Section 21050:Electric and electronic materials-related
Except Principal Investigator
Basic Section 30010:Crystal engineering-related
Keywords
Principal Investigator
MOSFET / Diamond
Except Principal Investigator
パワー半導体 / ヘテロエピタキシャル成長 / ダイヤモンド / ダイヤモンド半導体 / パワー半導体素子 / ワイドギャップ半導体
  • Research Projects

    (3 results)
  • Research Products

    (2 results)
  • Co-Researchers

    (3 People)
  •  Diamond Heteroepitaxial Growth on Sapphire and SiC substrates and its application to MOSFET

    • Principal Investigator
      嘉数 誠
    • Project Period (FY)
      2025 – 2029
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 30010:Crystal engineering-related
    • Research Institution
      Saga University
  •  Research on Interface Properties and Hole Carrier Transport of High-power Diamond MOSFETsPrincipal Investigator

    • Principal Investigator
      SAHA・NILOY CHANDRA
    • Project Period (FY)
      2025 – 2027
    • Research Category
      Grant-in-Aid for Early-Career Scientists
    • Review Section
      Basic Section 21050:Electric and electronic materials-related
    • Research Institution
      Saga University
  •  Diamond Heteroepitaxial Growth on Sapphire and SiC Substrates and its Application to MOSFET

    • Principal Investigator
      Kasu Makoto
    • Project Period (FY)
      2024
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 30010:Crystal engineering-related
    • Research Institution
      Saga University

All 2024

All Journal Article

  • [Journal Article] Microgrooves with low-index facets in halide vapor deposited (001) β-Ga<sub>2</sub>O<sub>3</sub>: origin of reverse leakage current in Schottky barrier diodes observed by high-sensitive emission microscopy and synchrotron X-ray topography2024

    • Author(s)
      Kasu Makoto、Otsubo Yuto、Sdoeung Sayleap、Eguchi Masanori、Saha Niloy Chandra、Oishi Toshiyuki、Sasaki Kohei、Lin Chia-Hung、Arima Jun、Kawasaki Katsumi、Hirabayashi Jun
    • Journal Title

      Applied Physics Express

      Volume: 17 Issue: 7 Pages: 071004-071004

    • DOI

      10.35848/1882-0786/ad5bbe

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-23K23242
  • [Journal Article] Dynamic switching operation of diamond MOSFETs with NO2 p-type doping and Al2O3 gate insulation and passivation2024

    • Author(s)
      Saha Niloy Chandra、Shiratsuchi Tomoki、Eguchi Masanori、Oishi Toshiyuki、Kasu Makoto
    • Journal Title

      Journal of Vacuum Science &amp; Technology B

      Volume: 42 Issue: 5

    • DOI

      10.1116/5.0218780

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23K21083, KAKENHI-PROJECT-23K23242
  • 1.  Kasu Makoto (50393731)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 2 results
  • 2.  高橋 和敏 (30332183)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 3.  大石 敏之 (40393491)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 1 results

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