Maeda Takuya 前田拓也

Researcher Number	20965694
Other IDs	https://orcid.org/0000-0002-2736-5611
Affiliation (Current)	2026: 東京大学, 大学院工学系研究科(工学部), 講師
Affiliation (based on the past Project Information) *help	2023 – 2025: 東京大学, 大学院工学系研究科(工学部), 講師 2022: 東京大学, 大学院工学系研究科(工学部), 助教
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related / 0302:Electrical and electronic engineering and related fields Except Principal Investigator Medium-sized Section 30:Applied physics and engineering and related fields
Keywords	Principal Investigator 高電界効果 / 高周波デバイス / パワーデバイス / 窒化ガリウム / 高電界物性 / 高電子移動度トランジスタ(HEMT) / 二次元電子ガス(2DEG) / ドリフト速度 / 窒化ガリウム(GaN) / c軸方向移動度 … More / 高電界キャリア輸送 / ヘテロ接合 / 飽和ドリフト速度 / ワイドギャップ半導体 / 高周波トランジスタ … More Except Principal Investigator ワイドバンドギャップ半導体 / 顕微鏡 / ワイドギャップ半導体 / 誘導ラマン散乱 / 国際共同研究 / デバイスプロセス / エピタキシャル成長 / 窒化物半導体 Less

Measurement of Electron Drift Velocity in GaN under High Electric FieldPrincipal Investigator
- Principal Investigator
  
  Maeda Takuya
- Project Period (FY)
  2023 – 2024
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  The University of Tokyo
Functional Extension of Nitride Semiconductors by Epitaxial Integration of Novel Materials
- Principal Investigator
  
  小林篤
- Project Period (FY)
  2023 – 2026
- Research Category
  
  Fund for the Promotion of Joint International Research (International Collaborative Research)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  Tokyo University of Science
In situ three-dimensional measurement of wide bandgap semiconductors with stimulated Raman scattering
- Principal Investigator
  
  小関泰之
- Project Period (FY)
  2023 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  The University of Tokyo
Study on High Field Carrier Transport in Gallium NitridePrincipal Investigator
- Principal Investigator
  
  Maeda Takuya
- Project Period (FY)
  2022 – 2023
- Research Category
  
  Grant-in-Aid for Research Activity Start-up
- Review Section
  
  0302:Electrical and electronic engineering and related fields
- Research Institution
  The University of Tokyo

All 2025 2024 2023

All Journal Article Presentation

[Journal Article] Broadband stimulated Raman hyperspectral imaging of cells and semiconductors with synchronized fiber and solid-state sources2025
- Author(s)
  Takahashi Shun、Kamei Kento、Oguchi Kenichi、Kuruma Kazuhiro、Spratt Spencer J.、Akaboshi Hikaru、Wakamoto Yusuke、Maeda Takuya、Ozeki Yasuyuki
- Journal Title
  
  Optics Express
  
  Volume: 33 Issue: 3 Pages: 3890-3890
- DOI
  10.1364/oe.545877
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23H00271, KAKENHI-PROJECT-23K17886, KAKENHI-PROJECT-23KJ0729
[Journal Article] Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures2025
- Author(s)
  Okuda Tomoya、Ota Shunsuke、Kawahara Takahiko、Makiyama Kozo、Nakata Ken、Maeda Takuya、Kobayashi Atsushi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 126 Issue: 5 Pages: 052105-052105
- DOI
  10.1063/5.0228924
- Data Source
  KAKENHI-PROJECT-23KK0094
[Journal Article] Sputter Epitaxy of Transition Metal Nitrides: Advances in Superconductors, Semiconductors, and Ferroelectrics2025
- Author(s)
  Kobayashi Atsushi、Maeda Takuya、Akiyama Toru、Kawamura Takahiro、Honda Yoshio
- Journal Title
  
  physica status solidi (a)
  
  Volume: - Issue: 17 Pages: 2400896-2400896
- DOI
  10.1002/pssa.202400896
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-24K08268, KAKENHI-PROJECT-23KK0094
[Journal Article] Structural and optical properties of epitaxial ScAlN coherently grown on GaN bulk substrates by sputtering method2024
- Author(s)
  Maeda Takuya、Wakamoto Yusuke、Kaneki Shota、Fujikura Hajime、Kobayashi Atsushi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 125 Issue: 2 Pages: 022103-022103
- DOI
  10.1063/5.0213662
- Data Source
  KAKENHI-PROJECT-23KK0094
[Journal Article] Thermionic Field Emission in a Si-Doped AlN SBD with a Graded n+-AlGaN Top Contact Layer2024
- Author(s)
 Takuya Maeda, Yusuke Wakamoto、Issei Sasaki, Akihira Munakata, Masanobu Hiroki, Kazuyuki Hirama, Kazuhide Kumakura, Yoshitaka Taniyasu
- Journal Title
 
 IEDM 2024 Technical Digest
 
 Volume: - Pages: 1-4
- DOI
 10.1109/iedm50854.2024.10873586
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-23K13362
[Journal Article] Velocity-Field Characteristics of 2DEG in AlGaN/GaN Precisely Determined by Pulsed I-V Measurements for TLM Structure2024
- Author(s)
  Yusuke Wakamoto, Takahiko Kawahara, Shigeki Yoshida, Kozo Makiyama, Ken Nakata, Yoshiaki Nakano, Takuya Maeda
- Journal Title
  
  Proceedings of the 82nd Device Research Conference (DRC 2024)
  
  Volume: -
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22K20423
[Journal Article] Franz-Keldysh effect in β-Ga2O3 Schottky barrier diode under high reverse bias voltage2024
- Author(s)
 Maeda Takuya、Ema Kentaro、Sasaki Kohei
- Journal Title
 
 Applied Physics Express
 
 Volume: 17 Issue: 12 Pages: 124001-124001
- DOI
 10.35848/1882-0786/ad9664
- Peer Reviewed / Open Access
- Data Source
 KAKENHI-PROJECT-23K13362
[Journal Article] Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering2023
- Author(s)
  Atsushi Kobayashi, Yoshio Honda, Takuya Maeda, Tomoya Okuda, Kohei Ueno, Hiroshi Fujioka
- Journal Title
  
  Applied Physics Express
  
  Volume: 17 Issue: 1 Pages: 011002-011002
- DOI
  10.35848/1882-0786/ad120b
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23KK0094, KAKENHI-PROJECT-23K26557
[Presentation] アニール処理を施したScAlN/AlGaN/GaNヘテロ構造の特性2025
- Author(s)
  奥田朋也, 太田隼輔, 久保田航瑛, 前田拓也, 河原孝彦, 牧山剛三, 中田健, 小林篤
- Organizer
  第72回春季応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-23KK0094
[Presentation] 窒化アルミニウム系ショットキーバリアダイオードの電流輸送機構の解明2025
- Author(s)
  前田拓也, 若本裕介, 佐々木一晴, 棟方晟啓, 廣木正伸, 平間一行, 熊倉一英, 谷保芳孝
- Organizer
  電気学会電子デバイス研究会「化合物半導体を用いた次世代高機能デバイス技術とアプリケーション」
- Invited
- Data Source
  KAKENHI-PROJECT-23K13362
[Presentation] High-Field Transport in Wide-Bandgap Nitride Semiconductors -Impact Ionization, Avalanche, Tunneling, and Velocity Saturation-2025
- Author(s)
  T. Maeda
- Organizer
  Compound Semiconductor Week 2025 (CSW 2025)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K13362
[Presentation] AlGaN/GaN上へのScAlN薄膜の低温エピタキシャル成長2025
- Author(s)
  太田隼輔, 奥田朋也, 久保田航瑛, 前田拓也, 河原孝彦, 牧山剛三, 中田健, 小林篤
- Organizer
  第72回春季応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-23KK0094
[Presentation] Comprehensive Study on Velocity Saturation Characteristics of 2DEG in AlGaN/GaN Heterostructures2025
- Author(s)
  Y. Wakamoto, T. Kawahara, S. Yoshida, K. Makiyama, K. Nakata, T. Maeda
- Organizer
  The 15th International Conference on Nitride Semiconductors (ICNS 15)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K13362
[Presentation] X線分光測定によるGaN上スパッタ成長ScAlN薄膜の表面酸化状態の評価2025
- Author(s)
  佐々木洸, 棟方晟啓, 小林正起, 山本涼太, 佐藤早和紀, 小林篤, 中野義昭, 前田拓也
- Organizer
  第72回春季応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-23KK0094
[Presentation] スパッタ成長ScAlN/AlGaN/AlN/GaNヘテロ構造における二次元電子ガスの輸送特性2025
- Author(s)
  久保田航瑛, 若本裕介, 河原孝彦, 吉田成輝, 牧山剛三, 中田健, 小林篤, 前田拓也
- Organizer
  第72回春季応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-23KK0094
[Presentation] エピタキシャルScAlN/AlGaN/GaNヘテロ構造の作製2024
- Author(s)
  奥田朋也, 太田隼輔, 河原孝彦, 牧山剛三, 中田健, 前田拓也, 小林篤
- Organizer
  第85回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23KK0094
[Presentation] Trasport Properties in GaN under High Electric Field2024
- Author(s)
  T. Maeda
- Organizer
  The 15th Topical Workshop on Heterostructure Microelectronics (TWHM 2024)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K13362
[Presentation] AlGaN/GaNヘテロ接合における二次元電子ガスのドリフト速度の測定2024
- Author(s)
  若本裕介, 河原孝彦, 吉田成輝, 牧山剛三, 中田健, 中野義昭, 前田拓也
- Organizer
  第70回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K13362
[Presentation] 順バイアス印加AlNショットキーバリアダイオードのエミッション顕微鏡観察2024
- Author(s)
  佐々木一晴, 廣木正伸, 熊倉一英, 平間一行, 谷保芳孝, 田中敦之, 本田善央, 中野義昭, 前田拓也
- Organizer
  第72回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K13362
[Presentation] SiドープAlNショットキーバリアダイオードにおける順方向リーク電流の解析2024
- Author(s)
  佐々木一晴, 廣木正伸, 熊倉一英, 平間一行, 谷保芳孝, 中野義昭, 前田拓也
- Organizer
  第85回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K13362
[Presentation] AlGaN/GaN HEMT構造上へのScAlN薄膜エピタキシャル成長2024
- Author(s)
  奥田朋也, 太田隼輔, 河原孝彦, 牧山剛三, 中田健, 前田拓也, 小林篤
- Organizer
  第16回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-23KK0094
[Presentation] Epitaxial Growth of Transition Metal Nitrides on Nitride Semiconductors2024
- Author(s)
  Atsushi Kobayashi, Takuya Maeda, Yoshio Honda
- Organizer
  LEDIA 2024
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0094
[Presentation] 組成傾斜AlGaNコンタクト層を有するAlN SBDにおけるほぼ理想的な熱電子電界放出の発現2024
- Author(s)
  前田拓也
- Organizer
  電気学会調査委員会最先端ナノエレクトロニクス技術調査専門委員会
- Invited
- Data Source
  KAKENHI-PROJECT-23K13362
[Presentation] Sputter Epitaxy of Transition Metal Nitrides on Nitride Semiconductors2024
- Author(s)
  Atsushi Kobayashi, Takuya Maeda, Toru Akiyama, Takahiro Kawamura, Yoshio Honda
- Organizer
  E-MRS 2024 Fall Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0094
[Presentation] スパッタ成長ScAlN/AlGaN/AlN/GaNヘテロ構造における2DEG輸送特性の温度依存性2024
- Author(s)
  K. Kubota, Y. Wakamoto, T. Kawahara, S. Yoshida, K. Makiyama, K. Nakata, Y. Nakano, A. Kobayashi, T. Maeda
- Organizer
  第43回電子材料シンポジウム (EMS-43)
- Data Source
  KAKENHI-PROJECT-23KK0094
[Presentation] AlGaN/GaN二次元電子ガスにおけるドリフト速度-電界特性の温度依存性2024
- Author(s)
  若本裕介, 河原孝彦, 吉田成輝, 牧山剛三, 中田健, 前田拓也
- Organizer
  第85回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K13362
[Presentation] Thermionic Field Emission in a Si-doped AlN SBD with a Graded n+-AlGaN Top Contact Layer2024
- Author(s)
  T. Maeda, Y. Wakamoto, I. Sasaki, A. Munakata, M. Hiroki, K. Hirama, K. Kumakura, Y. Taniyasu
- Organizer
  The 70th International Electron Devices Meeting (IEDM 2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K13362
[Presentation] AlGaN/GaN ヘテロ接合における二次元電子ガスのドリフト速度の高温特性2024
- Author(s)
  若本裕介, 河原孝彦, 吉田成輝, 牧山剛三, 中田健, 前田拓也
- Organizer
  第16回ナノ構造エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-23K13362
[Presentation] Trasport Properties of GaN under High Electric Field2024
- Author(s)
  T. Maeda
- Organizer
  15th Topical Workshop on Heterostructure Microelectronics (TWHM 2024)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K20423
[Presentation] 広帯域波長可変ファイバー光パラメトリック発振器の構築とその分子振動イメージング応用2024
- Author(s)
  高橋俊、亀井健斗、小口研一、車一宏、S. J. Spratt、赤星光、若本裕介、前田拓也、小関泰之
- Organizer
  レーザー学会第590回研究会「次世代ファイバレーザー技術」、ポスター番号26、名古屋大学
- Data Source
  KAKENHI-PROJECT-23H00271
[Presentation] Characterization of Ni/Si-doped AlN Schottky barrier diodes2024
- Author(s)
  T. Maeda, I. Sasaki, M. Hiroki, K. Hirama, K. Kumakura, Y. Taniyasu
- Organizer
  The 43rd Electronic Materials Symposium (EMS 43)
- Data Source
  KAKENHI-PROJECT-23K13362
[Presentation] Barrier Height Inhomogeneity in Si-doped AlN Schottky Barrier Diodes on SiC substrates2024
- Author(s)
  T. Maeda, I. Sasaki, M. Hiroki, K. Hirama, K. Kumakura, Y. Taniyasu
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K13362
[Presentation] Velocity-Field Characteristics of 2DEG in AlGaN/GaN Precisely Determined by Pulsed I-V Measurements for TLM Structure2024
- Author(s)
  Y. Wakamoto, T. Kawahara, S. Yoshida, K. Makiyama, K. Nakata, T. Maeda
- Organizer
  The 82nd Device Research Conference (DRC 82)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K20423
[Presentation] ファイバー光パラメトリック発振器を用いた広帯域ハイパースペクトル誘導ラマン散乱顕微法2024
- Author(s)
  髙橋俊, 亀井健斗, 小口研一 , 車一宏, S. J. Spratt, 赤星光, 若本裕介, 前田拓也, 小関泰之
- Organizer
  第3回超高速光エレクトロニクス研究会, ポスター番号8, 千葉工業大学
- Data Source
  KAKENHI-PROJECT-23H00271
[Presentation] Velocity-Field Characteristics of 2DEG in AlGaN/GaN Precisely Determined by Pulsed I-V Measurements for TLM Structure2024
- Author(s)
  Y. Wakamoto, T. Kawahara, S. Yoshida, K. Makiyama, K. Nakata, T. Maeda
- Organizer
  The 82nd Device Research Conference (DRC 82)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K13362
[Presentation] Atomic-resolution STEM observation of ScxAl1-xN/GaN heterojunction interface2024
- Author(s)
  Shinsuke Hashimoto, Takehito Seki, Atsushi Kobayashi, Takuya Maeda, Yuichi Ikuhara, Naoya Shibata
- Organizer
  15th International Symposium on Atomic Level Characterizations for New Materials and Devices '24
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0094
[Presentation] SiドープAlNショットキーバリアダイオードの電流-電圧特性のサイズ依存性2024
- Author(s)
  佐々木一晴, 廣木正伸, 熊倉一英, 平間一行, 谷保芳孝, 中野義昭, 前田拓也
- Organizer
  第16回ナノ構造エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-23K13362
[Presentation] 組成傾斜AlGaNコンタクト層を有するAlN SBDにおける電流輸送機構の解明2024
- Author(s)
  前田拓也, 若本裕介, 佐々木一晴, 棟方晟啓, 廣木正伸, 平間一行, 熊倉一英, 谷保芳孝
- Organizer
  第72回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K13362
[Presentation] ScAlN/GaNヘテロ接合界面の原子分解能STEM観察2024
- Author(s)
  橋本晋亮, 関岳人, 前田拓也, 小林篤, 幾原雄一, 柴田直哉
- Organizer
  日本顕微鏡学会第80回学術講演会
- Data Source
  KAKENHI-PROJECT-23KK0094
[Presentation] Photocurrent induced by Franz-Keldysh effect in β-Ga2O3N Schottky barrier diode under high reverse bias voltage2024
- Author(s)
  T. Maeda, K. Ema, K. Sasaki
- Organizer
  65th Electronic Materials Conference (EMC)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K13362
[Presentation] AlGaN/GaNヘテロ接合における2次元電子ガスのドリフト速度の測定2024
- Author(s)
  若本裕介, 河原孝彦, 吉田成輝, 牧山剛三, 中田健, 中野義昭, 前田拓也
- Organizer
  第70回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22K20423
[Presentation] Drift Velocity of 2DEG in AlGaN/GaN in Ultrawide Temperature Range from 25 K to 573 K2024
- Author(s)
  Y. Wakamoto, T. Kawahara, S. Yoshida, K. Makiyama, K. Nakata, T. Maeda
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K13362
[Presentation] Analysis of Capacitance-Frequency Characteristics of Si-doped AlN Schottky Junction2024
- Author(s)
  T. Maeda, I. Sasaki, M. Hiroki, K. Kumakura, K. Hirama, Y. Taniyasu
- Organizer
  The 2024 Fall Meeting of the European Materials Research Society (E-MRS 2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K13362
[Presentation] SiC 基板上 AlN ショットキーバリアダイオードにおける障壁高さの局所低下2024
- Author(s)
  佐々木一晴, 廣木正伸, 平間一行, 熊倉一英, 谷保芳孝, 田中敦之, 本田善央, 前田拓也
- Organizer
  先進パワー半導体分科会第11回講演会
- Data Source
  KAKENHI-PROJECT-23K13362
[Presentation] Low-field and High-field 2DEG Transport Properties in AlGaN/GaN at High Temperatures2024
- Author(s)
  Y. Wakamoto, T. Kawahara, S. Yoshida, K. Makiyama, K. Nakata, T. Maeda
- Organizer
  The 15th Topical Workshop on Heterostructure Microelectronics (TWHM 2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K13362
[Presentation] AlGaN/GaNヘテロ接合における二次元電子ガスの飽和ドリフト速度の電子濃度依存性2024
- Author(s)
  若本裕介, 河原孝彦, 吉田成輝, 牧山剛三, 中田健, 前田拓也
- Organizer
  第72回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K13362
[Presentation] ファイバー光パラメトリック発振器を用いた広帯域ハイパースペクトル誘導ラマン散乱イメージング2024
- Author(s)
  高橋俊、亀井健斗、小口研一、車一宏、スプラットスペンサー、赤星光、若本裕介、前田拓也、小関泰之
- Organizer
  第85回応用物理学会秋季学術講演会、19p-A37-6、新潟朱鷺メッセ
- Data Source
  KAKENHI-PROJECT-23H00271
[Presentation] Temperature-Dependent Velocity-Field Characteristics of 2DEG in AlGaN/GaN Heterostructures2024
- Author(s)
  Y. Wakamoto, T. Kawahara, S. Yoshida, K. Makiyama, K. Nakata, T. Maeda
- Organizer
  The 43rd Electronic Materials Symposium (EMS 43)
- Data Source
  KAKENHI-PROJECT-23K13362
[Presentation] 波長可変ファイバー光源と固体レーザーによる広帯域誘導ラマン分光イメージング2024
- Author(s)
  高橋俊、亀井健斗、小口研一、車一宏、スプラットスペンサージョン、赤星光、若本裕介、前田拓也、小関泰之
- Organizer
  Optics & Photonics Japan (OPJ2024)、1aB2、電気通信大学
- Data Source
  KAKENHI-PROJECT-23H00271
[Presentation] Characterization of ScAlN/GaN Toward Electronic Device Application2024
- Author(s)
  T. Maeda, Y. Wakamoto, A. Kobayashi
- Organizer
  BCICTS 2024
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0094
[Presentation] ScAlN/GaNとAlGaN/GaNに対する数値計算・解析式による2DEGモデリング2023
- Author(s)
  Y. Wakamoto,A. Kobayashi,Y. Nakano,T. Maeda
- Organizer
  第42回電子材料シンポジウム(EMS-42)
- Data Source
  KAKENHI-PROJECT-23KK0094
[Presentation] GaN基板上にスパッタ成長したScAlN薄膜の構造・光学物性の評価2023
- Author(s)
  T. Maeda,Y. Wakamoto,S. Kaneki,H. Fujikura,A. Kobayashi
- Organizer
  第42回電子材料シンポジウム(EMS-42)
- Data Source
  KAKENHI-PROJECT-23KK0094
[Presentation] Sputtering Epitaxial Integration of AlN and NbN for Polarity Control and Crystal Phase Manipulation2023
- Author(s)
  Atsushi Kobayashi,Shunya Kihira,Takahito Takeda,Masaki Kobayashi,Takuya Maeda,Takayuki Harada,Toru Akiyama,Takahiro Kawamura,Kohei Ueno,Hiroshi Fujioka
- Organizer
  14th International Conference on Nitride Semiconductors (ICNS-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0094
[Presentation] Structural Properties of Epitaxial ScAlN Films Grown by Sputtering: Experimental and Machine Learning Approaches2023
- Author(s)
  Atsushi Kobayashi,Yoshio Honda,Takuya Maeda,Kohei Ueno,Hiroshi Fujioka
- Organizer
  14th International Conference on Nitride Semiconductors (ICNS-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0094
[Presentation] Characterization of Optical Properties and Bandgaps of ScxAl1-xN Epitaxially Grown on GaN Bulk Substrate by Sputtering Method2023
- Author(s)
 Takuya Maeda,Yusuke Wakamoto,Shota Kaneki,Hajime Fujikura,Atsushi Kobayashi
- Organizer
 14th International Conference on Nitride Semiconductors (ICNS-14)
- Int'l Joint Research
- Data Source
 KAKENHI-PROJECT-23KK0094
[Presentation] Study on 2DEG Density in ScAlN/GaN and AlGaN/GaN Heterostructures Based on Simulation and Analytical Modeling2023
- Author(s)
  Yusuke Wakamoto,Atsushi Kobayashi,Yoshiaki Nakano,Takuya Maeda
- Organizer
  14th International Conference on Nitride Semiconductors (ICNS-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0094

1. 小林篤 (20470114)

# of Collaborated Projects: 1 results

# of Collaborated Products: 21 results
2. 中野貴之 (00435827)

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results
3. 本田善央 (60362274)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
4. 小関泰之 (60437374)

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results
5. AKIYAMA Toru

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Maeda Takuya 前田 拓也

Research Projects

Research Products

Co-Researchers

Measurement of Electron Drift Velocity in GaN under High Electric FieldPrincipal Investigator

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Functional Extension of Nitride Semiconductors by Epitaxial Integration of Novel Materials

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In situ three-dimensional measurement of wide bandgap semiconductors with stimulated Raman scattering

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Study on High Field Carrier Transport in Gallium NitridePrincipal Investigator

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[Journal Article] Broadband stimulated Raman hyperspectral imaging of cells and semiconductors with synchronized fiber and solid-state sources2025

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[Journal Article] Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures2025

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[Journal Article] Sputter Epitaxy of Transition Metal Nitrides: Advances in Superconductors, Semiconductors, and Ferroelectrics2025

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[Journal Article] Structural and optical properties of epitaxial ScAlN coherently grown on GaN bulk substrates by sputtering method2024

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[Journal Article] Thermionic Field Emission in a Si-Doped AlN SBD with a Graded n<sup>+</sup>-AlGaN Top Contact Layer2024

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[Journal Article] Velocity-Field Characteristics of 2DEG in AlGaN/GaN Precisely Determined by Pulsed I-V Measurements for TLM Structure2024

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[Journal Article] Franz-Keldysh effect in β-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diode under high reverse bias voltage2024

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[Journal Article] Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering2023

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[Presentation] アニール処理を施したScAlN/AlGaN/GaNヘテロ構造の特性2025

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[Presentation] 窒化アルミニウム系ショットキーバリアダイオードの電流輸送機構の解明2025

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[Presentation] High-Field Transport in Wide-Bandgap Nitride Semiconductors -Impact Ionization, Avalanche, Tunneling, and Velocity Saturation-2025

Author(s)

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[Presentation] AlGaN/GaN上へのScAlN薄膜の低温エピタキシャル成長2025

Maeda Takuya 前田拓也