SHIMOMURA Satoshi 下村哲

Researcher Number	30201560
Other IDs
Affiliation (based on the past Project Information) *help	2019 – 2023: 愛媛大学, 理工学研究科(工学系), 教授 2007: Ehime University, 大学院・理工学研究科, 教授 2007: Ehime University, GRADUATE OF ENGINEERING SCIENCE, PROFESSOR 2006: 愛媛大学, 大学院理工学研究科, 教授 2003 – 2005: 大阪大学, 大学院・基礎工学研究科, 助教授 … More 2002: Graduate School of Engineering Science, Osaka University, Associate Professor, 基礎工学研究科, 助教授 2000 – 2001: 大阪大学, 大学院・基礎工学研究科, 助教授 1997 – 1998: 大阪大学, 基礎工学研究科, 助教授 1995: Osaka Univ., Fac.Engin.Sci., Associate Professor, 基礎工学部, 助教授 1994: 大阪大学, 基礎光学部, 講師 1993 – 1994: 大阪大学, 基礎工学部, 講師 Less
Review Section/Research Field	Principal Investigator Basic Section 21060:Electron device and electronic equipment-related / Electronic materials/Electric materials Except Principal Investigator Electronic materials/Electric materials / Electronic materials/Electric materials / 固体物性Ⅰ(光物性・半導体・誘電体)
Keywords	Principal Investigator GaAsBi / (411)A / 面発光レーザー / 光デバイス / 偏光異方性利得 / 半導体レーザ / (221)B GaAs 基板 / GaAsBi/GaAs 量子井戸 / 基板ホルダー冷却速度 / 基板ホルダー温度分布 … More / 温度急冷ステージの設計 / 面内基板温度分布 / サーモグラフィ / 基板温度制御 / 光変調反射分光スペクトル / 量子井戸 / 偏光安定化 / 長波長帯面発光レーザ / ガリウムひ素ビスマス / Super-flat interface / giant conduction band offset / 巨大バンドオフセット / InAlAsSb / AIAsSb / その場反射率スペクトル測定 / サブバンド間吸収 / AlAsSbBi / InGaAsN / AlAsSb / InGaAs / (775) / 量子細線 / 超平坦界面 / (775)B / 超平坦ヘテロ界面 / 巨大伝導帯オフセット … More Except Principal Investigator InGaAs / InAlAs / (775)B GaAs substrate / MBE growth / (775)B GaAs基板 / MBE成長 / GaAs / distributed Bragg reflector / polarization stabilization / (775)B InP substrate / quantum wire / vertical cavity surface emitting laser / (775)B InP基盤 / (775)B GaAs基盤 / InGaAS / 分布型ブラッグ反射器 / 偏光制御 / (775)B InP基板 / 量子細線 / 面発光レーザ / QWR-VCSELs / Self-organized quantum wire / High-index GaAs substrates / 面発光量子細線レーザ / 自己形成型量子細線 / 高指数面GaAs基板 / (221)A GaAs substrate / (553)A GaAs substrate / InGaAs quantum wire / GaAs quantum wire / self-organized quantum wire / (221)A GaAs基板 / (553)A GaAs基板 / InGaAs量子細線 / GaAs量子細線 / 自然形成型量子細線 / Negative differential resistance / Full-width at half maximum of excitonic absorption / Stokes shift / InAlAs quantum wells / AlGaAs quantum wells / AlAs resonant tunneling diodes / AlGaAd quantum wells / 411 (A) / AlGaAs共鳴トンネルダイオード / AlGaAsヘテロ界面 / ストークスシフト / lnAlAs 量子井戸 / lnGaAs / AlAs 共鳴トンネルダイオード / AlGaAs 量子井戸 / 負性微分抵抗特性 / 励起子による吸収半値幅 / ストークシフト / InAlAs量子井戸 / AlAs共鳴トンネルダイオード / AlGaAs量子井戸 / (411)A / Anderson Localization / Ballistic Electron / Anti-dot Artificial Lattice / Magnetic Electron Focusing Effect / Edge State / Quantum Hall Effect / Magneto-Capacitance / Two Dimensional Electron System / 静電容量 / とじ込めポテンシャル / メゾスコピック / 電気容量 / アンチ・ドット人口格子 / 非局所伝導 / アンダーソン局在 / バリステック電子 / アンチ・ドット格子 / 磁気電子フォーカス効果 / エッジ状態 / 量子ホール効果 / 磁気電気容量 / 2次元電子系 Less

Study on polarization stabilization of long wavelength GaAsBi surface emitting laser utilizing anisotropic gainPrincipal Investigator
- Principal Investigator
  
  下村哲
- Project Period (FY)
  2019 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Ehime University
Expkloring Research for Quantum Well Materiels with Giant Band-Offset and Their Quantum StructurePrincipal Investigator
- Principal Investigator
  
  SHIMOMURA Satoshi
- Project Period (FY)
  2005 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Ehime University
  Osaka University
Fabrication of long-wavelength-range quantum wire lasers
- Principal Investigator
  
  HIYAMIZU Satoshi
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka University
Development of InGaAs QWR-VCSELs
- Principal Investigator
  
  HIYAMIAZU Satoshi
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka University
High density InGaAs/AlGaAs quantum wires on (775)B GaAs substrates
- Principal Investigator
  
  HIYAMIZU Satoshi
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka University
Supwe-flat (411) A hetero.
- Principal Investigator
  
  HIYAMIZU Satoshi
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka University
Investigation of Nonlocal Conduction in Two Dimensional Electron System Controlled by Various Gate
- Principal Investigator
  
  MURASE Kazuo
- Project Period (FY)
  1993 – 1994
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  固体物性Ⅰ(光物性・半導体・誘電体)
- Research Institution
  Osaka University

All 2023 2022 2021 2019 2008 2007 2006 2005

All Journal Article Presentation Book

[Book] 薄膜ハンドブック(第2版)2008
- Author(s)
  金原粲(監修) 下村哲(分担執筆)
- Total Pages
  4
- Publisher
  オーム社
- Data Source
  KAKENHI-PROJECT-17560283
[Book] 薄膜ハンドブック第2版2008
- Author(s)
  下村哲(共著)
- Total Pages
  3
- Publisher
  オーム社
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560283
[Journal Article] Handbook of thin film2008
- Author(s)
  S. Shimomura, R. Kimpara
- Journal Title
  
  Ohmu-sba. 2nd Edition
  
  Pages: 24-26
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560283
[Journal Article] 830-nm polarization controlled lasing of InGaAs quantum wire vertical-cavity surface-emitting lasers grown on(775)B GaAs substrates by molecular beam epitaxy2007
- Author(s)
  Y. Higuchi, S. Osaki, Y. Sasahata, T. Kitada, S. Shimomura, M. Ogura, S. Hiyamizu, S.
- Journal Title
  
  Jpn. J. Appl. Phys. Part2 46
  
  Pages: 138-141
- NAID
  10018868082
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17560283
[Journal Article] 830-nm polarization controlled lasing of InGaAs quantum wire vertical-catty surface-emitting lasers grown on(775)B GaAs substrates by molecular beam enitaxy2007
- Author(s)
  Y. Higuchi, S. Osaki, Y. Sasahata, T. Kitada, S. Shimomura, M. Ogura, S. Iiiyamizu
- Journal Title
  
  Jpn. J. Appl. Phys. Part2 Vol.46
  
  Pages: 138-141
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560283
[Journal Article] 830-nm polahzation controlled lasing of InGaAs quantum wtre vertical-cavity surface-emitting lasers grown on(775)B GaAs substrates by molecular beam epitaxy2007
- Author(s)
  Y. Higuchi, S. Osaki, Y. Sasahata, T. Kitada, S. Shimomura, M. Ogura, S. Hiyamizu,
- Journal Title
  
  Jpn. J. Appl. Phys. Part2 46
  
  Pages: 138-141
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17560283
[Journal Article] 1.3μm rang effectively cylindrical In_<0.53>Ga_<0.47>As/In_<0.52>Al_<0.48>As quantum wires grown on (221)A InP substrates by molecular beam epitaxy2006
- Author(s)
  S.Shimomura
- Journal Title
  
  Physica E. 32
  
  Pages: 386-349
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206034
[Journal Article] 1.3μm rang effectively cylindrical In_<0.53>Ga_<0.47>As/In_<0.52>Al_<0.48>As quantum wires grown on (221)A InP substrates by molecular beam epitaxy2006
- Author(s)
  S.shimomura
- Journal Title
  
  Physica E. 32
  
  Pages: 386-349
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206034
[Journal Article] Extremely strong lateral confinement and improved uniformity of 1.3 μm range In_<0.53>Ga_<0.47>As/In_<0.52>Al_<0.48>As self-organized quantum wires grown on (221)A InP substrates by molecular beam epitaxy2005
- Author(s)
  S.Shimomura
- Journal Title
  
  J.Cryst.Growth (in press)
- Data Source
  KAKENHI-PROJECT-15206034
[Presentation] 室温における(100)GaAsGaAsBi/GaAs 量子井戸の PLおよび PRスペクトル2023
- Author(s)
  鎌倉広太郎，下村哲,　行武幸将，張成銘
- Organizer
  第７０回応用物理学会　春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04514
[Presentation] GaAs 基板へのマイクロレンズの作製2022
- Author(s)
  菊井大輝、国土泰介、小瀧誉之春、政本真哉、下村哲
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04514
[Presentation] (100) GaAs 基板上GaAsBi/GaAs 多重量子井戸評価用フォトリフレクタンス測定装置の構築と評価2021
- Author(s)
  林拓馬、清水彩花、行武幸将、下村哲
- Organizer
  2021年第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04514
[Presentation] GaAsBi/GaAs 量子井戸のホトルミネッセンス(PL)、ホトリフレクタンス(PR)スペクトル測定系の構築2021
- Author(s)
  林拓馬、清水彩花、行武幸将1、下村哲
- Organizer
  応用物理・物理系学会中国四国支部合同学術講演会
- Data Source
  KAKENHI-PROJECT-19K04514
[Presentation] GaAsの結晶成長時における基板温度測定方法2021
- Author(s)
  南條宜行、今岡達哉、永田周平、亀井航、下村哲
- Organizer
  2021年第68回応用物理学会春季学術講演会（オンライン開催）2021年3月16日-19日
- Data Source
  KAKENHI-PROJECT-19K04514
[Presentation] GaAsBi/GaAs 量子井戸のホトルミネッセンス(PL)、ホトリフレクタンス(PR)スペクトル2021
- Author(s)
  行武幸将、清水彩花、林拓馬、長尾嘉大、下村哲
- Organizer
  応用物理・物理系学会中国四国支部合同学術講演会
- Data Source
  KAKENHI-PROJECT-19K04514
[Presentation] (100) GaAs 基板上 GaAsBi/GaAs 量子井戸の偏光ホトルミネッセンスの As flux 依存性2021
- Author(s)
  林拓馬、山本巧、清水彩花、下村哲
- Organizer
  2021年第68回応用物理学会春季学術講演会（オンライン開催）2021年3月16日-19日
- Data Source
  KAKENHI-PROJECT-19K04514
[Presentation] 物理研磨を用いたGaAsマイクロレンズの作製2021
- Author(s)
  国土泰介、菊井大輝、岡大智、下村哲
- Organizer
  2021年第68回応用物理学会春季学術講演会（オンライン開催）2021年3月16日-19日
- Data Source
  KAKENHI-PROJECT-19K04514
[Presentation] (100)GaAs基板上 GaAsBi/GaAs量子井戸の As flux 依存性2019
- Author(s)
  山本巧，清水彩花, Pallavi Kisan Patil，下村哲
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04514
[Presentation] GaAs基板上に作製したマイクロレンズ2019
- Author(s)
  今岡達哉、神原誉、佐々木大志、下村哲
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04514
[Presentation] GaAs基板を用いたマイクロレンズの設計2019
- Author(s)
  神原誉, 佐々木大志, 今岡達也, 下村哲
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04514
[Presentation] GaAs基板上のマイクロレンズの作製2019
- Author(s)
  今岡達哉、国土泰介、佐々木大志、西村和久、神原誉、下村哲
- Organizer
  応用物理・物理系学会　中国四国支部　合同学術講演会
- Data Source
  KAKENHI-PROJECT-19K04514
[Presentation] (221)A, B GaAs基板上のGaAsBi/GaAs量子井戸のホトルミネッセンス2019
- Author(s)
  清水彩花、山本巧、神原誉、下村哲
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04514
[Presentation] (100) 基板上にMBE成長したGaAsBi/GaAs 量子井戸の偏光PL2019
- Author(s)
  清水彩花、山本巧、神原誉、樋口憧生、下村哲
- Organizer
  応用物理・物理系学会　中国四国支部　合同学術講演会
- Data Source
  KAKENHI-PROJECT-19K04514
[Presentation] MBE growth of GaAsBi/GaAs quantum wells by two-substrate-temperature method2019
- Author(s)
  Satoshi Shimomura
- Organizer
  Asia Pacific Society for Materials Research 2019Annual Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04514

1. HIYAMIZU Satoshi (50201728)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
2. KITADA Takahiro (90283738)

# of Collaborated Projects: 4 results

# of Collaborated Products: 3 results
3. MURASE Kazuo (50028164)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. TAKAOKA Sadao (50135654)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. SANO Naokatu (00029555)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. LIU Yi (60240412)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. OGAWA Masato (40177142)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. OGURA Mutsuo (90356717)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. SUGAYA Takeyoshi (60357259)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. ISHIKAWA Hiroshi

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. OHTSUBO Koji

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

SHIMOMURA Satoshi 下村 哲

Research Projects

Research Products

Co-Researchers

Study on polarization stabilization of long wavelength GaAsBi surface emitting laser utilizing anisotropic gainPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Expkloring Research for Quantum Well Materiels with Giant Band-Offset and Their Quantum StructurePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Fabrication of long-wavelength-range quantum wire lasers

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of InGaAs QWR-VCSELs

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

High density InGaAs/AlGaAs quantum wires on (775)B GaAs substrates

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Supwe-flat (411) A hetero.

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Investigation of Nonlocal Conduction in Two Dimensional Electron System Controlled by Various Gate

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Book] 薄膜ハンドブック(第2版)2008

Author(s)

Total Pages

Publisher

Data Source

[Book] 薄膜ハンドブック第2版2008

Author(s)

Total Pages

Publisher

Description

Data Source

[Journal Article] Handbook of thin film2008

Author(s)

Journal Title

Description

Data Source

[Journal Article] 830-nm polarization controlled lasing of InGaAs quantum wire vertical-cavity surface-emitting lasers grown on(775)B GaAs substrates by molecular beam epitaxy2007

Author(s)

Journal Title

NAID

Data Source

[Journal Article] 830-nm polarization controlled lasing of InGaAs quantum wire vertical-catty surface-emitting lasers grown on(775)B GaAs substrates by molecular beam enitaxy2007

Author(s)

Journal Title

Description

Data Source

[Journal Article] 830-nm polahzation controlled lasing of InGaAs quantum wtre vertical-cavity surface-emitting lasers grown on(775)B GaAs substrates by molecular beam epitaxy2007

Author(s)

Journal Title

Description

Data Source

[Journal Article] 1.3μm rang effectively cylindrical In_<0.53>Ga_<0.47>As/In_<0.52>Al_<0.48>As quantum wires grown on (221)A InP substrates by molecular beam epitaxy2006

Author(s)

Journal Title

SHIMOMURA Satoshi 下村哲

[Presentation] GaAsBi/GaAs 量子井戸のホトルミネッセンス(PL)、ホトリフレクタンス(PR)スペクトル測定系の構築2021