NOHIRA Hiroshi 野平博司

… Alternative Names

野平博司ノヒラヒロシ

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Researcher Number	30241110
Other IDs
External Links
Affiliation (Current)	2025: 東京都市大学, 理工学部, 教授
Affiliation (based on the past Project Information) *help	2019 – 2021: 東京都市大学, 理工学部, 教授 2015 – 2018: 東京都市大学, 工学部, 教授 2016: 東京都市大学, 工学部・電気電子工学科, 教授 2011 – 2012: 東京都市大学, 工学部, 教授 2009 – 2010: Musashi Institute of Technology, 工学部, 准教授 … More 2007 – 2008: Musashi Institute of Technology, 工学部, 准教授 2000 – 2008: Musashi Institute of Technology, Department of Electrical & Electronic Engineering, Associate Professor, 工学部, 助教授 1994 – 1999: 武蔵工業大学, 工学部, 講師 1997: 武蔵工業大学, 工学部, 教授 1992 – 1993: 武蔵工業大学, 工学部, 助手 Less
Review Section/Research Field	Principal Investigator 表面界面物性 / Thin film/Surface and interfacial physical properties / Thin film/Surface and interfacial physical properties Except Principal Investigator Thin film/Surface and interfacial physical properties / 表面界面物性 / Electronic materials/Electric materials / Basic Section 21050:Electric and electronic materials-related / Thin film/Surface and interfacial physical properties / Applied materials / Applied materials science/Crystal engineering / Science and Engineering
Keywords	Principal Investigator 深さ方向元素分布 / 角度分解X線光電子分光法 / X線光電子分光法 / Depth profiling / rare earth oxide / Si interface / Insulator / Angle-Resolved XPS / high-κ dielectrics / 希土類酸化膜 … More / Si界面 / 絶縁膜 / 高誘電率材料 / 半導体界面 / 積層構造 / 高誘電率絶縁膜 / 表面・界面物性 / 価電子帯構造 / 水素終端Si(111) / シリコン酸化膜 / 価電子帯 / soft-ICP / エッチングによる表面ダメージ / C1s光電子スペクトル / 光電子分光法 / ダイヤモンド / 角度分解X線光電子分光 / 高誘電率絶縁膜/半導体界面 / 歪Geチャネル / 界面構造 / Ge / 高移動度チャネル / 高誘電率膜ゲート絶縁膜 / 硬X線光電子分光法 / 歪チャネル / 半導体物 / 半導体界面深さ方向元素分布 / 価電子帯端の不連続量 / 界面遷移層 / SiO_2-Si / 構造遷移層 / O1s光電子エネルギー損失スペクトル / ラジカル酸化 / 水素終端Si(100) / SiOX_2-Si / 価電子帯端の連続量 / コバルトシリサイド / シリコン … More Except Principal Investigator シリコン酸化膜 / interface structure / 酸化反応 / 界面構造 / シリコン / 光電子分光 / 界面 / 界面ダイポール / 原子スケール / oxidation reaction / 酸化機構 / 第一原理計算 / 酸化膜 / 誘電率 / 光電子分光法 / X線励起光電子分光法 / 不揮発性メモリ / アモルファス / XPS / Si-SiO_2 / silicon oxide / 価電子帯 / 酸化膜の層状成長 / atomic-scale / oxidation mechanism / silicon / Hydrogen termination / シリコン界面 / 界面反応 / 層状成長 / 初期酸化 / 水素終端 / 高誘電率絶縁膜 / 表面 / 希土類酸化膜 / 最大エントロピー法 / 希土類金属酸化膜 / 高誘電率膜 / ゲート絶縁膜 / 電子帯構造 / 角度分解光電子分光法 / 放射光 / 表面・界面 / 電子デバイス / 酸化物エレクトロニクス / 薄膜成長 / 抵抗変化メモリ / 機械学習 / データストレージ / データストレージ機械学習 / 表面・界面物性 / 電子デバイス・機器 / 電子・電気材料 / MOS / 不揮発メモリ / ニューロモルフィック / X線光電子分光法 / 酸化物 / 欠陥準位 / MOSFET / defect / XANES / amorphous / interface / SiO2 / Dielectric constant / Maximum entropy concept / Rare oxide film / High dielectric constant film / gate insulators / Angle-resolved photoelectron spectroscopy / photoelectron spectroscopy / Synchrotron radiation / 硬X線 / 高エネルギー光電子分光法 / elastic scattering / first principle molecular orbital calculation / interface dipole / interface states / surface roughness / 光電子回折 / 非弾性散乱 / ダイポール相互作用 / 価電子帯オフセット / 酸化速度 / 活性酸素原子 / 弾性散乱 / 第一原理分子軌道計算 / 界面原子構造 / 界面準位 / 表面粗さ / valence band discontinuity / valence band / layr-by-layr oxidation of silicon / 価電子帯の不連続量 / Si-SiO2 / initial stage of oxidation / preoxide / native oxide / プレオキサイド / 自然酸化膜 / interface reaction / layr by layr growth / initial oxidation / 局所的酸化 / 界面形成過程 / 初期酸化過程 / 平坦性 / 酸化膜界面 / 金属 / 第一原理計 / 酸化膜S / マイクロディスク / 光電子融合デバイス / 導波路 / 微小共振器 / 歪み / シミュレーション / フォトニック結晶 / 量子ドット / ゲルマニウム / 絶縁体・半導体界面 / 界面物性 / 絶縁体・半導体界 / 電界効果型トランジスタ / 半導体工学 / 半導体界面 / 絶縁膜 / シリコン窒化膜 / 薄膜 / シリコン酸窒化膜の界面粗さ / シリコン酸窒化膜の表面粗さ / Si界面構造 / 電子状態から決まる界面 / 価電子に対するエネルギー障壁 / 電子状態の沁み出し / 0 1s光電子のエネルギー損失 / X線光電子分光分析装置 / 電子エネルギー損失 / 組成遷移層 / 深さ方向分析 / シリコン熱酸化膜 / シリコン酸窒化膜 Less

Two-terminal resistance change memory based on interface dipole modulation
- Principal Investigator
  
  Miyata Noriyuki
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Multi-stack interface dipole modulation memory and analog operation dynamics
- Principal Investigator
  
  MIYATA noriyuki
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Study of terminal structure and electronic band structure of diamond surface by angle-resolved photoelectron spectroscopyPrincipal Investigator
- Principal Investigator
  
  Nohira Hiroshi
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Tokyo City University
XPS Study on ultra thin SiO2 film formed on Si substrates with several surface orientations
- Principal Investigator
  
  Hirose Kazuyuki
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Japan Aerospace EXploration Agency
Demonstration of innovative Germanium optoelectronic devices and developments of simulation technologies
- Principal Investigator
  
  SHIRAKI Yasuhiro
- Project Period (FY)
  2009 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo City University
Study on dielectric constant of ultrathin SiO2 by using XPS and first-principles calculation
- Principal Investigator
  
  HIROSE Kazuyuki
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Japan Aerospace Exploration Agency
Study of high-κ/strained-Ge channel and high-κ/strained-Si channel using X-ray Photoelectron SpectroscopyPrincipal Investigator
- Principal Investigator
  
  NOHIRA Hiroshi
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Tokyo City University
Determination of Insulator/Si Interface Structure by Extremely Sensitive and Highly Resolved Interfacial Analyses
- Principal Investigator
  
  HATTORI Takeo
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Tohoku University
An Experimental Study of Dipole-Layer Formation at Metal-Oxide/Semiconductor Interfaces
- Principal Investigator
  
  MIYATA Noriyuki
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Characterization of high-k gate insulators / Ge channel interface using X-ray photoelectron spectroscopyPrincipal Investigator
- Principal Investigator
  
  NOHIRA Hiroshi
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Musashi Institute of Technology
Study on dielectric constant of ultrathin films in gate structures
- Principal Investigator
  
  HIROSE Kazuyuki
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Japan Aerospace Exploration Agency
Formation of High-Quality High-κ Dielectrics/Si Interface by Atomic Scale ControlPrincipal Investigator
- Principal Investigator
  
  NOHIRA Hiroshi
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Musashi Institute of Technology
Development of High Energy Photoelectron Spectroscopy and Its Application to Analyses of Chemical States at High-κ dielectric/Silicon Interface
- Principal Investigator
  
  HATTORI Takeo
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Musashi Institute of Technology
Depth Profile of high-κ dielectrics/Si structure using AR-XPSPrincipal Investigator
- Principal Investigator
  
  NOHIRA Hiroshi
- Project Period (FY)
  2002 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  表面界面物性
- Research Institution
  Musashi Institute of technology
断面光電子分光法による非晶質シリコン酸化膜の組成および結合状態密度の深さ方向分析
- Principal Investigator
  
  HATTORI Takeo
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Musashi Institute of Technology
Studies on Carrier Trap Levels at Ultrathin SiO_2/Si Interface and Its Relation with Microscopic Structures
- Principal Investigator
  
  HATTORI Takeo
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  表面界面物性
- Research Institution
  Musashi Institute of Technology
酸化の進行に伴う酸化膜の価電子帯形成過程の角度分解X線光電子分光法による解明Principal Investigator
- Principal Investigator
  
  野平博司
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  表面界面物性
- Research Institution
  Musashi Institute of Technology
水素終端されたシリコン面の初期酸化過程の角度分解紫外線光電子分光法による解明Principal Investigator
- Principal Investigator
  
  野平博司
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  表面界面物性
- Research Institution
  Musashi Institute of Technology
Development of Ultra-smooth Si Surface by the Control of SiO_2/Si Interface Formation on an Atomic-Scale
- Principal Investigator
  
  HATTORI Takeo
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  表面界面物性
- Research Institution
  Musashi Institute of Technology
原子スケールで平坦なシリコン表面上のAlの初期成長過程のX線光電子分光法による解明Principal Investigator
- Principal Investigator
  
  野平博司
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  表面界面物性
- Research Institution
  Musashi Institute of Technology
Formation of Extremely Flat Silicon Oxide/Silicon Interface by the Thermal Oxidation of Hydrogen-Terminated Silicon Surface
- Principal Investigator
  
  HATTORI Takeo
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  表面界面物性
- Research Institution
  Musashi Institute of Technology
Study on Initial Stage of Oxidation of Hydrogen-Terminated Silicon Surface and Structure of Interface between Ultra-thin Metal Film and Ultra-thin Silicon Oxide Film
- Principal Investigator
  
  HATTORI Takeo
- Project Period (FY)
  1992 – 1993
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Applied materials
- Research Institution
  Musashi Institute of Technology

[Journal Article] Electrically induced change in HfO2/1-monolayer TiO2/SiO2 metal-oxide-semiconductor stacks: capacitance-voltage and hard X-ray photoelectron spectroscopy studies2021
- Author(s)
  Noriyuki Miyata, Kyoko Sumita, Akira Yasui, Ryousuke Sano, Reito Wada, and Hiroshi Nohira
- Journal Title
  
  Applied Physics Express
  
  Volume: 14 Issue: 7 Pages: 071005-071005
- DOI
  10.35848/1882-0786/ac0b08
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19H02178
[Journal Article] Interface Dipole Modulation in HfO<inf>2</inf>/SiO<inf>2</inf> MOS Stack Structures2018
- Author(s)
  Miyata Noriyuki、Nara Jun、Yamasaki Takahiro、Sumita Kyoko、Sano Ryousuke、Nohira Hiroshi
- Journal Title
  
  2018 IEEE International Electron Devices Meeting (IEDM)
  
  Volume: 2018 Pages: 7.6.1-7.6.4
- DOI
  10.1109/iedm.2018.8614674
- Data Source
  KAKENHI-PROJECT-16H02335
[Journal Article] Angle-Resolved Photoelectron Spectroscopy Studies of Initial Stage of Thermal Oxidation on 4H-SiC (0001) on-Axis and 4° Off-Axis Substrates2017
- Author(s)
  Arai Hitoshi、Toyoda Ryoma、Ishohashi Ai、Sano Yasuhisa、Nohira Hiroshi
- Journal Title
  
  ECS Transactions
  
  Volume: 77 Issue: 6 Pages: 51-57
- DOI
  10.1149/07706.0051ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K04681
[Journal Article] Angle-resolved photoelectron spectroscopy study of initial stage of thermal oxidation on 4HSiC( 0001)2016
- Author(s)
  Hitoshi Arai1 and Hiroshi Nohira
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 4S Pages: 04EB04-04EB04
- DOI
  10.7567/jjap.55.04eb04
- NAID
  210000146272
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K04681
[Journal Article] Effect of atomic-arrangement matching on La2O3/Ge heterostructures for epitaxial high-k-gate-stacks2015
- Author(s)
  T. Kanashima, H. Nohira, M. Zenitaka, Y. Kajihara, S. Yamada, and K. Hamaya
- Journal Title
  
  JOURNAL OF APPLIED PHYSICS
  
  Volume: 118 Issue: 22
- DOI
  10.1063/1.4937147
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K04681, KAKENHI-PROJECT-25246020
[Journal Article] In diffusion and electronic energy structure in polymer layers on In tinoxide2011
- Author(s)
  Polona Skraba, Gvido Bratina, Satoru Igarashi, Hirosi Nohira, Kazuyuki Hirose
- Journal Title
  
  Thin Solid Films
  
  Volume: Vol.519 Issue: 13 Pages: 4216-4219
- DOI
  10.1016/j.tsf.2011.02.034
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560035
[Journal Article] Estimation of breakdown electric-field strength while reflecting local structures of SiO_2 gate dielectrics using first-principles molecular orbital calculation technique2011
- Author(s)
  H. Seki, Y. Shibuya, D. Kobayashi, H. Nohira, K. Yasuoka, and K. Hirose
- Journal Title
  
  Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials
  
  Pages: 20-21
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360025
[Journal Article] XPS Study on Chemical Bonding States of high-κ/high-μGate Stacks for Advanced CMOS2011
- Author(s)
  Hiroshi Nohira, Arata Komatsu, Koji Yamashita, Kuniyuki Kakushima, Hiroshi Iwai, Yusuke Hoshi, Kentarou Sawano, and Yasuhiro Shiraki
- Journal Title
  
  Electrochemical Society Inc., ECS Transactions
  
  Volume: Vol.41 Pages: 137-146
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560035
[Journal Article] XPS Study on Chemical Bonding States of high-κ/high-μ Gate Stacks for Advanced CMOS2011
- Author(s)
  Hiroshi Nohira, Arata Komatsu, Koji Yamashita, Kuniyuki Kakushima, Hiroshi Iwai, Yusuke Hoshi, Kentarou Sawano, Yasuhiro Shiraki
- Journal Title
  
  Electrochemical Society Inc., ECS Transactions
  
  Volume: 41(Invited) Pages: 137-146
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560035
[Journal Article] Capacitance-Voltage Characterization of La_2O_3 Metal-Oxide-Semiconductor Structures on In_<0.53>Ga_<0.47> As Substrate with Different Surface Treatment Methods2011
- Author(s)
  Dariush Zade, Takashi Kanda, Koji Yamashita, Kuniyuki Kakushima, Hiroshi Nohira, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: Vol.50 Issue: 10S Pages: 10PD03-10PD03
- DOI
  10.1143/jjap.50.10pd03
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560035
[Journal Article] Effect of Various Surface Treatments on Chemical Bonding State at La_2O_3/In_<0.53>Ga_<0.47>As and on In_<0.53>Ga_<0.47>As Surface2011
- Author(s)
  Koji Yamashita, Arata Komatsu, Masato Watanabe, Yuuya Numajiri, Darius Zade, Kuniyuki Kakushima, Hiroshi Iwai, Hiroshi Nohira
- Journal Title
  
  Electrochemical Society Inc., ECS Transactions
  
  Volume: 41 Pages: 265-272
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246003
[Journal Article] Study of High-κ/In_<0.53>Ga_<0.47>As Interface by Hard X-ray Photoemission Spectroscopy2011
- Author(s)
  Koji Yamashita, Yuuya Numajiri, Masato Watanabe, Kuniyuki Kakushima, Hiroshi Iwai, Hiroshi Nohira
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 50 Issue: 10S Pages: 10PD02-10PD02
- DOI
  10.1143/jjap.50.10pd02
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246003, KAKENHI-PROJECT-21560035
[Journal Article] 第一原理分子軌道計算を用いたSi(Al)化合物の局所的な絶縁破壊電界の推定法2011
- Author(s)
  関洋, 渋谷寧浩, 野平博司, 小林大輔, 泰岡顕治, 廣瀬和之
- Journal Title
  
  ゲートスタック研究会-材料・プロセス・評価の物理
  
  Volume: 16 Pages: 127-130
- Data Source
  KAKENHI-PROJECT-21360025
[Journal Article] 第一原理分子軌道計算を用いた欠陥を持つSiO_2の絶縁破壊電界の推定2011
- Author(s)
  関洋,渋谷寧浩,野平博司,小林大輔,泰岡顕治,廣瀬和之
- Journal Title
  
  第17回ゲートスタック研究会-材料・プロセス・評価の物理-
  
  Pages: 77-80
- Data Source
  KAKENHI-PROJECT-21360025
[Journal Article] Estimation of breakdown electric-field strength while reflecting local structures of SiO_2 gate dielectrics using first-principles molecular orbital calculation technique2011
- Author(s)
  H. Seki, Y. Shibuya, D. Kobayashi, H. Nohira, K. Yasuoka, and K. Hirose
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 51(4)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360025
[Journal Article] 第一原理計算を用いたSi化合物の静的誘電率推定2011
- Author(s)
  渋谷寧浩, 小林大輔, 野平博司, 廣瀬和之
- Journal Title
  
  ゲートスタック研究会-材料・プロセス・評価の物理
  
  Volume: 16 Pages: 131-134
- Data Source
  KAKENHI-PROJECT-21360025
[Journal Article] 第一原理計算を用いたSiO_2多形の静的誘電率推定2011
- Author(s)
  渋谷寧浩,小林大輔,野平博司,廣瀬和之
- Journal Title
  
  第17回ゲートスタック研究会-材料・プロセス・評価の物理-
  
  Pages: 157-160
- Data Source
  KAKENHI-PROJECT-21360025
[Journal Article] Effect of Various Surface Treatments on Chemical Bonding State at La_2O_3/In_<0.53>Ga_<0.47>As and nd In_<0.53>Ga_<0.47>As Surface2011
- Author(s)
  Koji Yamashita, Arata Komatsu, Masato Watanabe, Yuuya Numajiri, Darius Zade, Kuniyuki Kakushima, Hiroshi Iwai, Hiroshi Nohira
- Journal Title
  
  Electrochemical Society Inc., ECS Transactions
  
  Volume: 41 Pages: 265-272
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560035
[Journal Article] Study of HfO_2/Si/Strained-Ge/SiGe Using Angle Resolved X-ray Photoelectron Spectroscopy2010
- Author(s)
  Arata Komatsu, Kentarou Nasu, Yusuke Hoshi, Toru Kurebayashi, Kentarou Sawano, Maksym Myronov, Hiroshi Nohira, and Yasuhiro Shiraki
- Journal Title
  
  Electrochemical Society Inc., ECS Transactions
  
  Volume: Vol.33, No.3 Pages: 467-472
- NAID
  110008900164
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560035
[Journal Article] Reduction of Accumulation Capacitance in Direct-Contact HfO_2/p-Type Si Metal-Oxide-Semiconductor Capacitors2010
- Author(s)
  Yasuhiro Abe, Noriyuki Miyata, Hiroshi Nohira, Tetsuji Yasuda
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: Vol.49,No.6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560035
[Journal Article] Study of HfO_2/Si/Strained-Ge/SiGe Using Angle Resolved X-ray Photoelectron Spectroscopy2010
- Author(s)
  Arata Komatsu, Kentarou Nasu, Yusuke Hoshi, Toru Kurebayashi, Kentarou Sawano, Maksym Myronov, Hiroshi Nohira, Yasuhiro Shiraki
- Journal Title
  
  Electrochemical Society Inc., ECS Transactions
  
  Volume: Vol.33,No.3 Pages: 467-472
- NAID
  110008900164
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560035
[Journal Article] Hard-X-ray Photoelectron Diffraction from Si(001) Covered by a 0-7-nm-Thick SiO_2 Layer2010
- Author(s)
  Igor Pis, Masaaki Kobata, Tomohiro Matsushita, Hiroshi Nohira, Keisuke Kobayashi
- Journal Title
  
  Appl.Phys.Express
  
  Volume: Vol.3,No.5
- NAID
  10027014913
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560035
[Journal Article] Study on Chemical Bonding States at high-κ/Si and high-κ/Ge Interfaces by XPS2010
- Author(s)
  Hiroshi Nohira
- Journal Title
  
  2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
  
  Volume: Part 2 of 3 Pages: 990-993
- Data Source
  KAKENHI-PROJECT-21560035
[Journal Article] 第一原理計算を用いた絶縁膜の誘電率推定2010
- Author(s)
  五十嵐智,小林大輔,野平博司,廣瀬和之
- Journal Title
  
  第15回ゲートスタック研究会-材料・プロセス・評価の物理-
  
  Pages: 193-196
- Data Source
  KAKENHI-PROJECT-21360025
[Journal Article] XPS Study on Chemical Bonding States of High-k Gate Stacks for Advanced CMOS2010
- Author(s)
  Hiroshi Nohira
- Journal Title
  
  Electrochemical Society Inc., ECS Transactions
  
  Volume: Vol.28, No.2 Pages: 129-137
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560035
[Journal Article] Study on Chemical Bonding States at high-κ/Si and high-κ/Ge Interfaces by XPS2010
- Author(s)
  Hiroshi Nohira
- Journal Title
  
  Proceedings of 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
  
  Volume: 2(3) Pages: 990-993
- Data Source
  KAKENHI-PROJECT-21560035
[Journal Article] Study of HfO_2/Si/Strained-Ge/SiGe Using Angle Resolved X-ray Photoelectron Spectroscopy2010
- Author(s)
  Arata Komatsu, Kentarou Nasu, Yusuke Hoshi, Toru Kurebayashi, Kentarou Sawano, Maksym Myronov, Hiroshi Nohira, Yasuhiro Shiraki
- Journal Title
  
  ECS Transaction
  
  Volume: 33 Pages: 467-472
- NAID
  110008900164
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246003
[Journal Article] 第一原理計算を用いた絶縁膜の誘電率推定2010
- Author(s)
  五十嵐智, 小林大輔, 野平博司, 廣瀬和之
- Journal Title
  
  ゲートスタック研究会-材料・プロセス・評価の物理- 15
  
  Pages: 175-178
- Data Source
  KAKENHI-PROJECT-21360025
[Journal Article] Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film2009
- Author(s)
  K.Kakushima (H.Nohira)
- Journal Title
  
  JOURNAL OF APPLIED PHYSICS 106
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560035
[Journal Article] Effect of Oxide Charge Trapping on X-ray Photoelectron Spectroscopy of HfO2/ SiO2/Si Structures2009
- Author(s)
  阿部泰宏, 宮田典幸, 池永英司, 鈴木治彦, 北村幸司, 五十嵐智, 野平博司
- Journal Title
  
  Japanese Journal of Applied Physics 48巻
- NAID
  40016559583
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360149
[Journal Article] 第一原理計算を用いた絶縁膜の誘電率推定2009
- Author(s)
  五十嵐智、小林大輔、野平博司、廣瀬和之
- Journal Title
  
  ゲートスタック研究会-材料・プロセス・評価の物理- 第14回
  
  Pages: 175-178
- Data Source
  KAKENHI-PROJECT-18360026
[Journal Article] Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film2009
- Author(s)
  K. Kakushima, K. Tachi, J. Song, S. Sato, H. Nohira, E. Ikenaga, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai
- Journal Title
  
  Journal of Applied Physics Vol. 106, No. 12
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360014
[Journal Article] Annealing-temperature Dependence of Compositional Depth Profiles and Chemical Bonding States of CeOx/LaOx/Si and LaOx/CeOx/Si Structure2009
- Author(s)
  H.Nohira
- Journal Title
  
  Electrochemical Society Inc., Vienna, Austria, ECS Transactions Vol.25
  
  Pages: 321-326
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560035
[Journal Article] Effect of Oxide Charge Trapping on X-ray Photoelectron Spectroscopy of HfO_2/SiO_2/Si Structures2009
- Author(s)
  Yasuhiro Abe (Hiroshi Nohira)
- Journal Title
  
  Japanese Journal of Applied Physics 48
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560035
[Journal Article] Relationship between optical dielectric constant and XPS relative chemical shift of 1s and 2p levels for dielectric compounds2008
- Author(s)
  野平博司(廣瀬和之)
- Journal Title
  
  Journal of Physics Vol. 100
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560026
[Journal Article] Correlation between the dipole moment induced at the Slater transition state and the optical dielectric constant of Si and Al compounds2008
- Author(s)
  K. Hirose, D. Kobayashi, H. Suzuki, H. Nohira
- Journal Title
  
  Applied Physics Letters Vol. 93
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360026
[Journal Article] Annealing-temperature Dependence of Compositional Depth Profile and Chemical Structures of LaOx/ScOx/Si and ScOx/LaOx/Si Interfacial Transition Layer2008
- Author(s)
  野平博司
- Journal Title
  
  Electrochemical Society Inc., Hawai, ECS Transactions Vol. 16
  
  Pages: 171-176
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560026
[Journal Article] Relationship between optical dielectric constant and XPS relative chemical shift of 1s and 2p levels for dielectric compounds2008
- Author(s)
  K. Hirose, H. Suzuki, H. Nohira, E. Ikenaga, D. Kobayashi, T. Hattori
- Journal Title
  
  Journal of Physics : Conference Series Vol. 100
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360026
[Journal Article] Angle-resolved photoelectron study on the structures of silicon nitride films and Si_3N_4/Si interfaces formed using nitrogen-hydrogen radicals2008
- Author(s)
  T. Aratani, M. Higuchi, S. Sugawa, E. Ikenaga, J. Ushio, H. Nohira, T. Suwa, A. Teramoto, T. Ohmi, T. Hattori
- Journal Title
  
  Journal of Applied Physics Vol. 104, No. 11
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360014
[Journal Article] Annealing-temperature Dependence of Compositional Depth Profile and Chemical Structures of LaOx/ScOx/Si and ScOx/LaOx/Si Interfacial Transition Layer2008
- Author(s)
  Hiroshi Nohira, Yoshinori Takenaga, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui and Hiroshi Iwai,
- Journal Title
  
  Electrochemical Society Inc., Hawai, ECS Transactions Vol. 16
  
  Pages: 171-176
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560026
[Journal Article] "Relationship between optical dielectric constant and XPS relative chemical shift of 1s and 2p levels for dielectric compounds2008
- Author(s)
  K. Hirose, H. Suzuki, H. Nohira, E. Ikenaga, D. Kobayashi, and T. Hattori
- Journal Title
  
  Journal of Physics Vol.100
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560026
[Journal Article] Investigation of the effect of in situ annealing of FePt nanodots under high vacuum on the chemical states of Fe and Pt by x-ray photoelectron spectroscopy2008
- Author(s)
  M. Murugesan, J. C. Bea, C.-K. Yin, H. Nohira, E. Ikenaga, T. Hattori, M. Nishijima, T. Fukushima, T. Tanaka, M. Miyao, M. Koyanagi
- Journal Title
  
  Journal of Applied Physics Vol. 104, No. 7
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360014
[Journal Article] Activated boron and its concen-tration profiles in heavily doped Si studied by soft x-ray photoelectron spectroscopy and Hall measurements2008
- Author(s)
  K. Tsutsui, T. Matsuda, M. Watanabe, C-G Jin, Y. Sasaki, B. Mizuno, E. Ikenaga, K. Kakushima, P. Alhmet, T. Maruizumi, H. Nohira, T. Hattori, H. Iwai
- Journal Title
  
  Journal of Applied Physics Vol. 104, No. 9
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360014
[Journal Article] Photoelectron Spectros-copy Studies of SiO_2/Si Interfaces2007
- Author(s)
  K. Hirose, H. Nohira, K. Azuma, T. Hattori
- Journal Title
  
  Progress in Surface Science Vol. 82
  
  Pages: 3-54
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360014
[Journal Article] Angle-Resolved Photoelectron Spectroscopy Study on Ultrathin Gate Dielectrics2007
- Author(s)
  Hiroshi Nohira, Takeo Hattori
- Journal Title
  
  Electrochemical Society Inc., Washington, ECS Transactions Vol. 11
  
  Pages: 183-194
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560026
[Journal Article] Photoelectron spectroscopy studies of SiO_2/Si interfaces2007
- Author(s)
  K. Hirose, H. Nohira, K. Azuma, T. Hattroi
- Journal Title
  
  Progress in Surface Science Vol. 82
  
  Pages: 3-54
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360026
[Journal Article] Electrical Characteristics of Si_3N_4 Films Formed by Directly Radical Nitridation on Si (110) and Si (100) Surfaces2007
- Author(s)
  M. Higuchi, T. Aratani, T. Hamada, S. Shinagawa, H. Nohira, E. Ikenaga, A. Teramoto, T. Hattori, S. Sugawa, T. Ohmi
- Journal Title
  
  Japanese Journal of Applied Physics Vol. 46, No. 4B
  
  Pages: 1895-1898
- NAID
  10022545462
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360014
[Journal Article] Subnitride and valence band offset at Si_3N_4/Si interface formed using nitrogen-hydrogen radicals2007
- Author(s)
  M. Higuchi, S. Sugawa, E. Ikenaga, J. Ushio, H. Nohira, T. Maruizumi, A. Teramoto, T. Ohmi, T. Hattori
- Journal Title
  
  Applied Physics Letters Vol. 90, No. 12
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360014
[Journal Article] Angle-resolved photoelectron spectroscopy on gate insulators2007
- Author(s)
  T. Hattori, H. Nohira, S. Shinagawa, M. Hori, M. Kase, T. Maruizumi
- Journal Title
  
  Microelectronics Reliability Vol. 47
  
  Pages: 20-26
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360014
[Journal Article] Angle-Resolved Photoelectron Spectroscopy Study on Ultrathin Gate Dielectrics2007
- Author(s)
  野平博司
- Journal Title
  
  Electrochemical Society Inc., Washington, ECS Transactions Vol.11
  
  Pages: 183-194
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560026
[Journal Article] Study of the gate insulator/silicon interface utilizing soft and hard x-ray photoelectron spectroscopy at SPring-82006
- Author(s)
  T.Hattori, H.Nohira, K.Azuma, K.W.Sakai, K.Nakajima, M.Suzuki, K.Kimura, et al.
- Journal Title
  
  International Journal of High Speed Electronics and Systems (to be published in)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] X-ray photoelectron spectroscopy study on dielectric properties at gate insulator film/Si interface2006
- Author(s)
  K. Hirose, H. Nohira, D. Kobayashi, T. Hattori
- Journal Title
  
  IEEE 2006 Int. Conf. Solid-State and Integrated Circuit Technology
  
  Pages: 368-371
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360026
[Journal Article] XPSを用いたAu/極薄SiO_2界面のバリアハイトの測定2006
- Author(s)
  鈴木治彦、長谷川覚、野平博司、服部健雄、山脇師之、鈴木伸子、小林大輔、廣瀬和之
- Journal Title
  
  応用物理学会分科会シリコンテクノロジー No.82-2
  
  Pages: 55-60
- NAID
  110004757013
- Data Source
  KAKENHI-PROJECT-18360026
[Journal Article] Thermal stability of Gd_2O_3/Si(100) interfacial transition layer2006
- Author(s)
  H.Nohira, T.Yoshida, H.Okamoto, S.Shinagawa, W.Sakai, K.Nakajima, M.Suzuki, K.Kimura, Ng Jin Aun, Y.Kobayashi, S.Ohmi, H.Iwai, E.Ikenaga, Y.Takata, K.Kobayashi, T.Hattori
- Journal Title
  
  Journal de Physique IV Vol.132
  
  Pages: 273-277
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560026
[Journal Article] X-ray photoelectron spectroscopy study of dielectric constants for Si compounds2006
- Author(s)
  K. Hirose, M. Kihara, D. Kobayashi, H. Okamoto, S. Shinagawa, H. Nohira, E. Ikenaga, M. Higuchi, A. Teramoto, S. Sugawa, T. Ohmi, T. Hattori
- Journal Title
  
  Applied Physics letters Vol. 89
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360026
[Journal Article] Valence charges for ultrathin SiO_2 film formed on Si(100)2006
- Author(s)
  K.Hirose, M.Kihara, H.Okamoto, H.Nohira, E.Ikenaga, Y.Takata, K.Kobayashi, T.Hattori
- Journal Title
  
  Journal de Physique IV 132
  
  Pages: 83-86
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Thermal stability of Gd_2O_3/Si(100) interfacial transition layer2006
- Author(s)
  H.Nohira, T.Yoshida, H.Okamoto, S.Shinagawa, W.Sakai, K.Nakajima, M.Suzuki, K.Kimura, Ng Jin Aun, Y.Kobayashi, S.Ohmi, H.Iwai, E.Ikenaga, Y.Takata, K.Kobayashi, T.Hattori
- Journal Title
  
  Journal de Physique IV 132
  
  Pages: 273-277
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560026
[Journal Article] X-ray photoelectron spectroscopy study on dielectric properties of AlN/Al_2O_3 Films2006
- Author(s)
  K. Hirose, H. Suzuki, T. Matsuda, Y. Takenaga, H. Nohira, E. Ikenaga, D. Kobayashi, T. Hattori
- Journal Title
  
  2006 Int. Workshop on Dielectric Thin Films for Future ULSI Device-Science and Technology-
  
  Pages: 25-26
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360026
[Journal Article] A novel probe of intrinsic electronic structure : hard X-ray photoemission spectroscopy2005
- Author(s)
  Y.Takata, K.Tamasaku, Y.Nishino, D.Miwa, M.Yabashi, E.Ikenaga, K.Horiba, M.Arita, K.Shimada, H.Namatame, H.Nohira, T.Hattori, S.Sodergren, B.Wannberg et al.
- Journal Title
  
  Journal of Electron Spectroscopy and Related Phenomena 144-147
  
  Pages: 1063-1065
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Thermal Stability of Lanthanum Oxide/Si(100) Interfacial Transition Layer2005
- Author(s)
  H.Nohira, T.Yoshida, H.Okamoto, Ng Jin Aun, Y.Kobayashi, S.Ohmi, H.Iwai, E.Ikenaga, K.Kobayashi, Y.Takata, T.Hattori
- Journal Title
  
  Electrochemical Society Inc.Society Inc.ECS Transactions 1
  
  Pages: 87-95
- Data Source
  KAKENHI-PROJECT-16560026
[Journal Article] Angle-resolved XPS study on chemical bonds in ultrathin silicon oxynitride films2005
- Author(s)
  S.Shinagawa, H.Nohira, T.Ikura, M.Hori, M.Kase, T.Hattori
- Journal Title
  
  Microelectronic Engineering 80
  
  Pages: 98-101
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560026
[Journal Article] Angle-resolved XPS study on chemical bonds in ultrathin silicon oxynitride films2005
- Author(s)
  S.Shinagawa, H.Nohira, T.Ikuta, M.Hori, M.Kase, T.Hattori
- Journal Title
  
  Microelectronic Engineering Vol.80
  
  Pages: 98-101
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560026
[Journal Article] Development of hard X-ray photoelectron spectroscopy at BL29XU in SPring-82005
- Author(s)
  Y.Takata, M.Yabashi, K.Tamasaku, Y.Nishino, D.Miwa, T.Ishikawa, E.Ikenaga, K.Horiba, S.Shin, M.Arita, K.Shimada, H.Namatame, M.Taniguchi, H.Nohira et al.
- Journal Title
  
  Nuclear Instruments and Methods in Physics Research A 547
  
  Pages: 50-55
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Development of hard X-ray photoelectron spectroscopy at BL29XU in SPring-82005
- Author(s)
  Y.Takata, M.Yabashi, K.Tamasaku, Y.Nishino, D.Miwa, T.Ishikawa, E.Ikenaga, K.Horiba, S.Shin, M.Arita, K.Shimada, H.Namatame, M.Taniguchi, H.Nohira, T.Hattori, S.Sodergren, B.Wannberg, K.Kobayashi
- Journal Title
  
  Nuclear Instruments and Methods in Physics Research A 547
  
  Pages: 50-55
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] A novel probe of intrinsic electronic structure : hard X-ray photoemission spectroscopy2005
- Author(s)
  Y.Takata, K.Tamasaku, Y.Nishino, D.Miwa, M.Yabashi, E.Ikenaga, K.Horiba, M.Arita, K.Shimada, H.Namatame, H.Nohira, T.Hattori, S.Sodergren, B.Wannberg, M.Taniguchi, S.Shin, T.Ishikawa, K.Kobayashi
- Journal Title
  
  Journal of Electron Spectroscopy and Related Phenomena 144-147
  
  Pages: 1063-1065
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Thermal Stability of LaO_x/Si Interfacial Transition Layer2005
- Author(s)
  H.Nohira, T.Yoshida, H.Okamoto, Ng Jin Aun, Y.Kobayashi, S.Ohmi, H.Iwai, E.Ikenaga, K.Kobayashi, Y.Takata, T.Hattori
- Journal Title
  
  ECS Transactions 1
  
  Pages: 87-95
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Characterization of Oxide Films on SiC Epitaxial (000-1) Faces by Angle-Resolved Photoemission Spectroscopy Measurements using Synchrotron Radiation2005
- Author(s)
  Y.Hijikata, H.Yaguchi, S.Yoshida, Y.Takata, K.Kobayashi, S.Shin, H.Nohira, T.Hattori
- Journal Title
  
  Materials Science Forum 483-485
  
  Pages: 585-588
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Determination of electron escape depth in ultrathin silicon oxide2005
- Author(s)
  H.Nohira, H.Okamoto, K.Azuma, Y.Nakata, E.Ikenaga, K.Kobayashi, Y.Takata, S.Shin, T.Hattori
- Journal Title
  
  Applied Physics Letters 86・8
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La_2O_3/Si(100) interfacial transition layer2004
- Author(s)
  H.Nohira, T.Shiraishi, K.Takahashi, I.Kashiwagi, C.Ohshima, S.Ohmi, et al.
- Journal Title
  
  Applied Surface Science 234
  
  Pages: 493-496
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La_2O_3/Si(100) interfacial transition layer2004
- Author(s)
  H.Nohira, T.Shiraishi, K.Takahashi, T.Hattori, I.Kashiwagi, C.Ohshima, S.Ohmi, H.Iwai, S.Joumori, K.Nakajima, M.Suzuki, K.Kimura
- Journal Title
  
  Applied Surface Science Vol.234
  
  Pages: 493-496
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560026
[Journal Article] Atomic-scale depth profiling of composition,chemical structure and electronic band structure of La_2O_3/Si(100) interfacial transition layer2004
- Author(s)
  H.Nohira, T.Shiraishi, K.Takahashi, T.Hattori, I.Kashiwagi, C.Ohshima, S.Ohmi, H.Iwai, S.Joumori, K.Nakajima, M.Suzuki, K.Kimura
- Journal Title
  
  Applied Surface Science 234
  
  Pages: 493-496
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560026
[Journal Article] Composition, chemical structure, and electronic band structure of rare earth oxide/Si(100) interfacial transition layer2004
- Author(s)
  T.Hattori, T.Yoshida, T.Shiraishi, K.Takahashi, H.Nohira, S.Joumori, et al.
- Journal Title
  
  Microelectronic Engineering 72
  
  Pages: 283-287
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La_2O_3/Si(100) interfacial transition layer2004
- Author(s)
  H.Nohira, T.Shiraishi, K.Takahashi, I.Kashiwagi, C.Ohshima, S.Ohmi, H.Iwai, S.Joumori, K.Nakajima, M.Suzuki, K.Kimura, T.Hattori
- Journal Title
  
  Applied Surface Science 234
  
  Pages: 493-496
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Composition,chemical structure,and electronic band structure of rare earth oxide/Si(100) interfacial transition layer2004
- Author(s)
  T.Hattori, T.Yoshida, T.Shiraishi, K.Takahashi, H.Nohira, S.Joumori, K.Nakajima, M.Suzuki, K.Kimura, I.Kashiwagi
- Journal Title
  
  Microelectronic Engineering 72
  
  Pages: 283-287
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560026
[Journal Article] Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La_2O_3/Si(100) interfacial transition layer2004
- Author(s)
  H.Nohira, T.Shiraishi, K.Takahashi, T.Hattori, I.Kashiwagi, C.Ohshima, S.Ohmi, H.Iwai, S.Joumori, K.Nakajima, M.Suzuki, K.Kimura
- Journal Title
  
  Applied Surface Science 234
  
  Pages: 493-496
- Data Source
  KAKENHI-PROJECT-16560026
[Journal Article] X-ray photoelectron spectroscopy study on SiO_2/Si interface structures formed by three kinds of atomic oxygen at 300℃2004
- Author(s)
  M.Shioji, T.Shiraishi, K.Takahashi, H.Nohira, K.Azuma, Y.Nakata, Y.Takata, S.Shin, K.Kobayashi, T.Hattori
- Journal Title
  
  Applied Physics Letters 84・19
  
  Pages: 3756-3758
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Composition, chemical structure, and electronic band structure of rare earth oxide/Si(100) interfacial transition layer2004
- Author(s)
  T.Hattori, T.Yoshida, T.Shiraishi, K.Takahashi, H.Nohira, S.Joumori, K.Nakajima, M.Suzuki, K.Kimura, I.Kashiwagi, C.Ohshima, S.Ohmi, H.Iwai
- Journal Title
  
  Microelectronic Engineering 72
  
  Pages: 283-287
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Dependence of SiO_2/Si interface structure on low-temperature oxidation process2004
- Author(s)
  T.Hattori, K.Azuma, Y.Nakata, M.Shioji, T.Shiraishi, T.Yoshida, K.Takahashi, H.Nohira, Y.Takata, S.Shin, K.Kobayashi
- Journal Title
  
  Applied Surface Science 234・1〜4
  
  Pages: 197-201
- NAID
  10011880703
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Composition, chemical structure, and electronic band structure of rare earth oxide/Si(100) interfacial transition layer2004
- Author(s)
  T.Hattori, T.Yoshida, T.Shiraishi, K.Takahashi, H.Nohira, S.Joumori, K.Nakajima, M.Suzuki, K.Kimura, I.Kashiwagi
- Journal Title
  
  Microelectronic Engineering Vol.72
  
  Pages: 283-287
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560026
[Journal Article] Chemical and electronic structures of Lu_2O_3/Si interfacial transition layer2003
- Author(s)
  H.Nohira, T.Shiraishi, T.Nakamura, K.Takahashi, M.Takeda, S.Ohmi, H.Iwai, et al.
- Journal Title
  
  Applied Surface Science 216
  
  Pages: 234-238
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems2003
- Author(s)
  K.Kobayashi, M.Yabashi, Y.Takata, T.Tokushima, S.Shin, K.Tamasaku, D.Miwa, T.Ishikawa, H.Nohira, T.Hattori, Y.Sugita, O.Nakatsuka, A.Sakai, S.Zaima
- Journal Title
  
  Applied Physics Letters 83
  
  Pages: 1005-1007
- NAID
  120002338858
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Chemical and electronic structures of Lu2O3/Si interfacial transition layer2003
- Author(s)
  H.Nohira, T.Shiraishi, T.Nakamura, K.Takahashi, M.Takeda, S.Ohmi, H.Iwai, T.Hattori
- Journal Title
  
  Applied Surface Science 216
  
  Pages: 234-238
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Study of the gate insulator/silicon interface utilizing soft and hard x-ray photoelectron spectroscopy at SPring-8
- Author(s)
  T.Hattori, H.Nohira, K.Azuma, K.W.Sakai, K.Nakajima, M.Suzuki, K.Kimura, Y.Sugita, E.Ikenaga, K.Kobayashi, Y.Takata, H.Kondo, S.Zaima
- Journal Title
  
  Int.J.High Speed Electronics and Systems (to be publised)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Presentation] HfO2/TiO2/SiO2構造の電圧印加によるTiの化学結合状態変化の観測2022
- Author(s)
  桐原芳治, 辻口良太, 伊藤俊一, 保井晃, 宮田典幸, 野平博司
- Organizer
  電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理― (第27回研究会)
- Data Source
  KAKENHI-PROJECT-19H02178
[Presentation] Hard X-ray Photoemission Spectroscopy Study on Interface Dipole Modulation of HfO2/SiO2 MIM Device2021
- Author(s)
  Yoshiharu Kirihara, Ryota Tsujiguti, Reito Wada, Akira Yasui, Noriyuki Miyata, Hiroshi Nohir
- Organizer
  2021 International Conference on Solid State Devices and Materials (SSDM2021)
- Data Source
  KAKENHI-PROJECT-19H02178
[Presentation] HAXPESによる界面ダイポール変調機構の解明2021
- Author(s)
  桐原芳治、和田励虎、辻口良太、保井晃、宮田典、野平博司
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02178
[Presentation] HAXPESによる界面ダイポール変調発生の確認2021
- Author(s)
  桐原芳治、辻口良太、保井晃、宮田典幸、野平博司
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02178
[Presentation] Resistive switching in two-terminal HfO2/SiO2 stack with interface dipole modulation2020
- Author(s)
  Noriyuki Miyata, Kyoko Sumita, Akira Yasui, Reito Wada, and Hiroshi Nohira
- Organizer
  2020 International Conference on Solid State Devices and Materials (SSDM2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02178
[Presentation] バイアス印加硬X線光電子分光法によるHfO2/SiO2界面ダイポール変調の検出2020
- Author(s)
  野平博司、和田励虎、保井晃、宮田典幸
- Organizer
  電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理― (第25回研究会)
- Data Source
  KAKENHI-PROJECT-19H02178
[Presentation] バイアス印加硬X線光電子分光法によるHfO2/SiO2界面ダイポール変調の評価2019
- Author(s)
  野平博司、和田励虎、保井晃、宮田典幸
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02178
[Presentation] HfO2/SiO2 MOS積層構造中の界面ダイポール変調動作2019
- Author(s)
  宮田、奈良、山崎、住田、佐野、野平
- Organizer
  応物・電通学会共催「ULSIデバイス・プロセス技術(IEDM2018特集)」
- Invited
- Data Source
  KAKENHI-PROJECT-16H02335
[Presentation] ARXPSによる soft-ICPエッチングプロセスがダイヤモンド半導体表面に与える影響2017
- Author(s)
  滝沢耕平, 加藤有香子, 牧野俊晴, 山崎聡，野平博司
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15K04681
[Presentation] 高空間分解能HXPESによるGe 2p内殻準位の結合エネルギーに歪みが与える影響の検出2017
- Author(s)
  佐野良介、此島志織、滝沢耕平、澤野憲太郎、野平博司
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15K04681
[Presentation] エピタキシャルGe上直接ALDによるAl2O3/Ge界面特性向上2017
- Author(s)
  池上和彦, 佐藤慶次郎, 澤田浩介, Maksym Myronov, 野平博司, 澤野憲太郎
- Organizer
  電子デバイス界面テクノロジー研究会
- Place of Presentation
  東レ研修センター（静岡県三島市）
- Year and Date
  2017-01-20
- Data Source
  KAKENHI-PROJECT-15K04681
[Presentation] AR-XPSによる4H-SiC (0001) on-Axis, 4° Off-Axis基板の初期酸化過程の解明2016
- Author(s)
  荒井仁、豊田涼馬、礒橋藍、佐野泰久、野平博司
- Organizer
  2016年第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学　大岡山キャンパス（東京都目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15K04681
[Presentation] AR-XPSによる4H-SiC (0001)の初期熱酸化過程の研究2016
- Author(s)
  荒井仁, 野平博司
- Organizer
  電子デバイス界面テクノロジー研究会（第21回）
- Place of Presentation
  東レ研修センター（静岡県三島市）
- Year and Date
  2016-01-22
- Data Source
  KAKENHI-PROJECT-15K04681
[Presentation] La2xA2(1-x)O3(A=Lu, Y)/La2O3/Ge(111) MIS構造におけるC-V特性の改善2016
- Author(s)
  金島岳、銭高真人、山本圭介、山城陸、只野純平、野平博司、中島寛、山田晋也、浜屋宏平
- Organizer
  2016年第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学　大岡山キャンパス（東京都目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15K04681
[Presentation] AR-XPSによる4H-SiC (0001)の初期酸化過程の解明2015
- Author(s)
  荒井仁、野平博司
- Organizer
  2015年第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15K04681
[Presentation] Initial Stage of SiO2/SiC Interface Formation on C-face 4H-SiC2015
- Author(s)
  Tomoya Sasago, Hitoshi Arai, Shunta Yamahori, Hiroshi Nohira
- Organizer
  2015 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES – SCIENCE AND TECHNOLOGY
- Place of Presentation
  Miraikan, National Museum of Emerging Science and Innovation（東京都江東区）
- Year and Date
  2015-11-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K04681
[Presentation] 結晶性La2O3/Ge(111)高品質界面のXPS分析2015
- Author(s)
  金島岳、野平博司、銭高真人、小林太朗、山城陸、山田晋也、浜屋宏平
- Organizer
  2015年第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15K04681
[Presentation] Evaluation of Dielectric Constant Deduced from Relaxation Energy at SiO2/Si interfaces2015
- Author(s)
  M. Moriya, Y. Amano, K. Umeda, D. Kobayashi, T. Yamamoto, H. Nohira, and K. Hirose
- Organizer
  2nd International Symposium on Computational Materials and Biological Sciences
- Place of Presentation
  名古屋大学
- Year and Date
  2015-09-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26390072
[Presentation] Angle-resolved Photoelectron Spectroscopy studies of initial stage of thermal oxidation on 4H-SiC (0001)2015
- Author(s)
  H. Arai, H. Nohira
- Organizer
  2015 International Conference on Solid State Devices and Materials
- Place of Presentation
  Sapporo Convention Center（北海道札幌市）
- Year and Date
  2015-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K04681
[Presentation] ドライ酸化プロセスの制御によるC関連欠陥の減少2015
- Author(s)
  笹子知弥、荒井仁、喜多浩之、室隆桂之、野平博司
- Organizer
  2015年第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15K04681
[Presentation] Study of Epitaxial La2O3 High-k/Ge(111) Interface by X-ray Photoelectron Spectroscopy2015
- Author(s)
  Takeshi Kanashima, Hiroshi Nohira, Masato Zenitaka, Taro Kobayashi, Riku Yamashiro, Shinya Yamada, Kohei Hamaya
- Organizer
  2015 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES – SCIENCE AND TECHNOLOGY
- Place of Presentation
  Miraikan, National Museum of Emerging Science and Innovation（東京都江東区）
- Year and Date
  2015-11-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K04681
[Presentation] XPSとXAFSを用いたZnO/CdS界面の化学結合状態評価2012
- Author(s)
  阿部泰宏, 小松新, 野平博司, 中西康次, 峯元高志, 太田俊明, 高倉秀行
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] 軟X線光電子分光法を用いたSi中Bの化学結合状態の熱処理温度依存性2012
- Author(s)
  宮田陽平, 金原潤, 秋田洸平, 筒井一生, 野平博司, 泉雄大, 室隆桂之, 木下豊彦, 角嶋邦之, アヘメトパールハット, 服部健雄, 岩井洋
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] 第一原理分子軌道計算を用いた欠陥を持つSiO_2の絶縁破壊電界の推定2012
- Author(s)
  関洋, 渋谷寧浩, 小林大輔, 野平博司, 泰岡顕治, 廣瀬和之
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会-材料・プロセス・評価の物理-」(第17回研究会)(旧「極薄シリコン酸化膜の形成・評価・信頼性」研究会)
- Place of Presentation
  東レ総合研修センター(静岡県)
- Year and Date
  2012-01-21
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] 第一原理計算を用いたSiO_2多形の静的誘電率推定2012
- Author(s)
  渋谷寧浩, 小林大輔, 野平博司, 廣瀬和之
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会-材料・プロセス・評価の物理-」(第17回研究会)(旧「極薄シリコン酸化膜の形成・評価・信頼性」研究会)
- Place of Presentation
  東レ総合研修センター(静岡県)
- Year and Date
  2012-01-20
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] 軟X線光電子分光法によるSi中の極浅高濃度Bドープ層におけるクラスター濃度分布解析2012
- Author(s)
  金原潤, 宮田陽平, 武井優典, 寺山一真, 筒井一生, 野平博司, 泉雄大, 室隆桂之, 木下豊彦, アヘメトパールハット, 角嶋邦之, 服部健雄, 岩井洋
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] Ce酸化物/Si(100)界面におけるCeの価数とCeシリケート2012
- Author(s)
  幸田みゆさ, Maimati Mamatrishat, 川那子高暢, 角嶋邦之, Ahmet Parhat, 野平博司, 片岡好則, 西山彰, 杉井信之, 筒井一生, 名取研二, 服部健雄, 岩井洋
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] Si-capによるHfO_2/歪みGe界面のHfジャーマネイト形成の抑制2012
- Author(s)
  小松新, 多田隼人, 渡邉将人, 那須賢太郎, 星祐介, 榑林徹, 澤野憲太郎, ミロノフマクシム, 白木靖寛, 野平博司
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-15
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] 種々の表面処理によるIn_<0.53>Ga_<0.47>As表面の化学結合状態の角度分解光電子分光法による評価2012
- Author(s)
  沼尻侑也, 山下晃司, 小松新, ザデダリューシュ, 角嶋邦之, 岩井洋, 野平博司
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会-材料・プロセス・評価の物理-」(第17回研究会)(旧「極薄シリコン酸化膜の形成・評価・信頼性」研究会)
- Place of Presentation
  東レ総合研修センター(静岡県)
- Year and Date
  2012-01-20
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] 第一原理計算を用いたSiO_2多形の静的誘電率推定2012
- Author(s)
  渋谷寧浩,小林大輔,野平博司,廣瀬和之
- Organizer
  第17回ゲートスタック研究会-材料・プロセス・評価の物理
- Place of Presentation
  三島
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] In_<0.53>Ga_<0.47>As表面の初期酸化過程のAR-XPSによる評価2012
- Author(s)
  沼尻侑也, 山下晃司, 小松新, Zade Darius, 角嶋邦之, 岩井洋, 野平博司
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-15
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] 第一原理分子軌道計算を用いた欠陥を持つSiO_2の絶縁破壊電界の推定2012
- Author(s)
  関洋,渋谷寧浩,野平博司,小林大輔,泰岡顕治,廣瀬和之
- Organizer
  第17回ゲートスタック研究会-材料・プロセス・評価の物理-
- Place of Presentation
  三島
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] SiO_2/SiC界面構造の角度分解光電子分光法による評価2012
- Author(s)
  岡田葉月, 小松新, 渡邊将人, 室隆桂之, 泉雄大, 野平博司
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] XPS Study on Chemical Bonding States of high-κ/high-μ Gate Stacks for Advanced CMOS2011
- Author(s)
  Hiroshi Nohira, Arata Komatsu, Koji Yamashita, Kuniyuki Kakushima, Hiroshi Iwai, Yusuke Hoshi, Kentarou Sawano, Yasuhiro Shiraki
- Organizer
  220th Meeting of The Electrochemical Society
- Place of Presentation
  Boston (USA)(招待講演)
- Year and Date
  2011-10-10
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] Estimation of breakdown electric-field strength while reflecting local structures of SiO_2 gate dielectrics using first-principles molecular orbital calculation technique2011
- Author(s)
  H. Seki, Y. Shibuya, D. Kobayashi, H. Nohira, K. Yasuoka, and K. Hirose
- Organizer
  2011 International Conference on Solid State Devices and Materials
- Place of Presentation
  Nagoya
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 第一原理分子軌道計算を用いたSiO_2の局所構造を反映した絶縁破壊電界の推定2011
- Author(s)
  関洋,渋谷寧浩,野平博司,小林大輔,泰岡顕治,廣瀬和之
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] XPS時間依存測定法によるSiO_2/Si界面の電荷トラップ密度の面方位依存性の評価2011
- Author(s)
  石原由梨,五十嵐智,小林大輔,野平博司,上野和良,廣瀬和之
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  厚木市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] AR-XPSによる種々の表面処理したIn_<0.53>Ga_<0.47>As表面の化学結合状態の評価2011
- Author(s)
  沼尻侑也, 山下晃司, 小松新, ザデダリューシュ, 角嶋邦之, 岩井洋, 野平博司
- Organizer
  電子情報通信学会技術研究会報告シリコン材料・デバイス
- Place of Presentation
  東北大学(宮城県)
- Year and Date
  2011-10-21
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] 第一原理計算を用いたSi化合物の静的誘電率推定2011
- Author(s)
  渋谷寧浩,小林大輔,野平博司,廣瀬和之
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 第一原理計算を用いたSi化合物の静的誘電率推定2011
- Author(s)
  渋谷寧浩, 小林大輔, 野平博司, 廣瀬和之
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理
- Place of Presentation
  東京都目黒区
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 角度分解硬X線光電子分光法によるHfO_2/Si/歪みGe/SiGe構造の評価2011
- Author(s)
  野平博司, 小松新, 那須賢太郎, 星裕介, 榑林徹, 澤野憲太郎, マクシムミロノフ, 白木靖寛
- Organizer
  電子情報通信学会技術研究会報告シリコン材料・デバイス
- Place of Presentation
  東北大学(宮城県)
- Year and Date
  2011-10-21
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] 第一原理計算を用いたSiO_2多形の静的誘電率推定2011
- Author(s)
  渋谷寧浩,小林大輔,野平博司,廣瀬和之
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 軟X線光電子分光法を用いたFin構造中の不純物化学結合状態分析2011
- Author(s)
  宮田陽平, 金原潤, 難波覚, 三角元力, 筒井一生, 野平博司, 室隆桂之, 木下豊彦, 角嶋邦之, アヘメトパールハット, 服部健雄, 岩井洋
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形県)
- Year and Date
  2011-09-01
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] 第一原理計算を用いたSiO_2/Si界面近傍中間酸化物の静的誘電率推定2011
- Author(s)
  渋谷寧浩, 小林大輔, 野平博司, 廣瀬和之
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形県)
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] XPS時間依存測定法によるSiO_2/Si界面の電荷トラップ密度の面方位依存性の評価2011
- Author(s)
  石原由梨, 五十嵐智, 小林大輔, 野平博司, 上野和良, 廣瀬和之
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川県厚木市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 第一原理分子軌道計算を用いたSiO_2の局所構造を反映した絶縁破壊電界の推定2011
- Author(s)
  関洋, 渋谷寧浩, 小林大輔, 野平博司, 泰岡顕治, 廣瀬和之
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形県)
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] 角度分解硬X線光電子分光法によるHfO_2/Si/歪みGe/SiGe構造の評価2011
- Author(s)
  野平博司, 小松新, 那須賢太郎, 星裕介, 博林徹, 澤野憲太郎, マクシムミロノフ, 白木靖寛
- Organizer
  電子情報通信学会技術研究会報告シリコン材料・デバイス
- Place of Presentation
  東北大学(宮城県)(招待講演)
- Year and Date
  2011-10-21
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] XPS時間依存測定法によるSiO_2/Si界面の電荷トラップ密度の面方位依存性の評価2011
- Author(s)
  石原由梨, 渋谷寧浩, 五十嵐智, 小林大輔, 野平博司, 上野和良, 廣瀬和之
- Organizer
  応用物理学会シリコンテクノロジー分科会137回研究集会(共催:電子情報通信学会SDM研究会)
- Place of Presentation
  名古屋大学(愛知県)
- Year and Date
  2011-07-04
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] XPS Study on Chemical Bonding States of high-kappa/high-k Gate Stacks for Advanced CMOS2011
- Author(s)
  Hiroshi Nohira, Arata Komatsu, Koji Yamashita, Kuniyuki Kakushima, Hiroshi Iwai, Yusuke Hoshi, Kentarou Sawano, Yasuhiro Shiraki
- Organizer
  220th Meeting of The Electrochemical Society
- Place of Presentation
  Boston, MA, USA(招待講演)
- Year and Date
  2011-10-11
- Data Source
  KAKENHI-PROJECT-21246003
[Presentation] XPS Study on Chemical Bonding States of high-kappa/high-k Gate Stacks for Advanced CMOS2011
- Author(s)
  Hiroshi Nohira
- Organizer
  Invited220th Meeting of The ElectrochemicalSociety
- Place of Presentation
  Boston, USA
- Year and Date
  2011-10-11
- Data Source
  KAKENHI-PROJECT-21246003
[Presentation] 第一原理計算を用いたSi化合物の静的誘電率推定2011
- Author(s)
  澁谷寧浩, 小林大輔, 野平博司, 廣瀬和之
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川県厚木市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 角度分解X線光電子分光法によるHfO_2/Si/歪みGe/SiGe構造の評価2011
- Author(s)
  小松新, 那須賢太郎, 星裕介, 榑林徹, 澤野憲太郎, マクシムミロノフ, 野平博司, 白木靖寛
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会-材料・プロセス・評価の物理-」(第16回研究会)(旧「極薄シリコン酸化膜の形成・評価・信頼性」研究会)
- Place of Presentation
  東京工業大学(東京都)
- Year and Date
  2011-01-22
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] AR-XPSによる(NH_4)_2S処理したIn_<0.53>Ga_<0.47>As表面の化学結合状態の評価2011
- Author(s)
  沼尻侑也, 山下晃司, 小松新, ダリューシュザデ, 角嶋邦之, 岩井洋, 野平博司
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形県)
- Year and Date
  2011-09-01
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] Si中にドープされたAsの軟X線光電子分光による化学結合状態の検出とその深さ方向分布2011
- Author(s)
  金原潤, 宮田陽平, 秋田洸平, 筒井一生, 野平博司, 室隆桂之, 木下豊彦, アヘメトパールハット, 角嶋邦之, 服部健雄, 岩井洋
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形県)
- Year and Date
  2011-09-01
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] Effect of Various Surface Treatments on Chemical Bonding State at La_2O_3/In_<0.53>Ga_<0.47>As and on In_<0.53>Ga_<0.47>As Surfaceat2011
- Author(s)
  Koji Yamashita, Arata Komatsu, Masato Watanabe, Yuuya Numajiri, Darius Zade, Kuniyuki Kakushima, Hiroshi Iwai, Hiroshi Nohira
- Organizer
  220th Meeting of The Electrochemical Society
- Place of Presentation
  Boston (USA)
- Year and Date
  2011-10-11
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] 第一原理分子軌道計算を用いたSi(Al)化合物の局所絶縁破壊電解の推定2011
- Author(s)
  関洋, 澁谷寧浩, 小林大輔, 野平博司, 泰岡顕治, 廣瀬和之
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川県厚木市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 第一原理分子軌道計算を用いたSi(Al)化合物の局所絶縁破壊電解の推定2011
- Author(s)
  関洋,澁谷寧浩,小林大輔,野平博司,泰岡顕治,廣瀬和之
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  厚木市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 第一原理分子軌道計算を用いたSi(Al)化合物の局所的な絶縁破壊電界の推定法2011
- Author(s)
  関洋,渋谷寧浩,野平博司,小林大輔,泰岡顕治,廣瀬和之
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 第一原理計算を用いたSi化合物の静的誘電率推定2011
- Author(s)
  澁谷寧浩,小林大輔,野平博司,廣瀬和之
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  厚木市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 第一原理計算を用いたSiO_2/Si界面の誘電率推定2011
- Author(s)
  五十嵐智,小林大輔,野平博司,廣瀬和之
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-第15回研究会
- Place of Presentation
  三島市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 第一原理分子軌道計算を用いたSi(Al)化合物の局所的な絶縁破壊電界の推定法2011
- Author(s)
  関洋, 渋谷寧浩, 野平博司, 小林大輔, 泰岡顕治, 廣瀬和之
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] XPS時間依存測定法によるSiO_2/Si界面の電荷トラップ密度の面方位依存性の評価2011
- Author(s)
  石原由梨,五十嵐智,小林大輔,野平博司,上野和良,廣瀬和之
- Organizer
  シリコンテクノロジー研究会
- Place of Presentation
  名古屋市
- Year and Date
  2011-07-04
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 角度分解X線光電子分光法によるHfO_2/Si/歪みGe/SiGe構造の評価2011
- Author(s)
  小松新, 那須賢太郎, 星裕介, 榑林徹, 澤野憲太郎, マクシムミロノフ, 野平博司, 白木靖寛
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会-材料・プロセス・評価の物理-」(第16回研究会)(旧「極薄シリコン酸化膜の形成・評価・信頼性」研究会)
- Place of Presentation
  東京工業大学(東京都)
- Year and Date
  2011-01-22
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] Pr系酸化膜を用いたヘテロ積層構造トンネル膜の電気特性シミュレーションと作製及び評価2010
- Author(s)
  小林大助, 栗原智之, 小寺哲夫, 内田建, 野平博司, 小田俊理
- Organizer
  2010年秋季第71回応用物理学会学術講演会, 予稿集, 17a-ZE-2
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-17
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] Estimation technique for optical dielectric constant of polymorphous SiO_2 through first-principles molecular orbital calculation2010
- Author(s)
  K.Hirose, D.Kobayashi, S.Igarashi, H.Nohira
- Organizer
  12th International Conference on Modern Materials and Technologies
- Place of Presentation
  Montecatini Terme, Italy
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 第一原理計算を用いたSiO_2/Si界面の誘電率推定2010
- Author(s)
  五十嵐智, 小林大輔, 野平博司, 廣瀬和之
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-第15回研究会
- Place of Presentation
  三島
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] XPS Study on Chemical Bonding States of High-k Gate Stacks for Advanced CMOS2010
- Author(s)
  Hiroshi Nohira
- Organizer
  217th Meeting of The Electrochemical Society
- Place of Presentation
  Vancouver, Canada(招待講演)
- Year and Date
  2010-04-27
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] 第一原理分子軌道計算を用いたSi・Al化合物の絶縁破壊電界の推定2010
- Author(s)
  関洋,澁谷寧浩,野平博司,小林大輔,泰岡顕治,廣瀬和之
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] Study on Chemical Bonding States at high-κ/Si and high-κ/Ge Interfaces by XPS2010
- Author(s)
  Hiroshi Nohira
- Organizer
  2010 10th IEEE International Conference on Solid-State and Integrated Circuit
- Place of Presentation
  上海(中国)
- Year and Date
  2010-11-03
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] 実験室硬X線光電子分光装置の開発とその半導体への応用2010
- Author(s)
  小林啓介(野平博司)
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学・湘南キヤンパス
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] Estimation technique f or optical dielectric constant of polym orphous SiO_2 through first-principles mo lecular orbital calculation2010
- Author(s)
  K. Hirose, D. Kobayashi, S. Igarashi, and H. Nohira
- Organizer
  12th International Conference on Modern Materials and Technologies
- Place of Presentation
  Mon tecatini Terme
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] SrO/La_2O_3/CeO_2/Si(100)構造の深さ方向組成分布および化学結合状態に及ぼす熱処理の影響2010
- Author(s)
  野平博司
- Organizer
  応用物理学会薄膜・表面物理分科会、シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会-材料・プロセス・評価の物理-」(第15回研究会)
- Place of Presentation
  東レ総合研修センター(静岡県三島市)
- Year and Date
  2010-01-22
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] 角度分解X線光電子分光法によるHfO_2/Si/歪Ge/SiGe構造の評価II2010
- Author(s)
  小松新, 那須賢太郎, 星裕介, 榑林徹, 澤野憲太郎, ミロノフマクシム, 野平博司, 白木靖寛
- Organizer
  2010年秋季<第71回>応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-21246003
[Presentation] SiO_2/Si界面の誘電率のSi面方位依存性についての考察2010
- Author(s)
  五十嵐智,小林大輔,野平博司,廣瀬和之
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  平塚市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 角度分解X線光電子分光法によるHfO_2/Si/歪Ge/SiGe構造の評価II2010
- Author(s)
  小松新, 那須賢太郎, 星裕介, 榑林徹, 澤野憲太郎, ミロノフマクシム, 野平博司, 白木靖寛
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] 角度分解X線光電子分光法によるHfO_2/Si/歪Ge/SiGe構造の評価2010
- Author(s)
  小松新, 那須賢太郎, 星裕介, 榑林徹, 澤野憲太郎, マクシムミロノフ, 野平博司, 白木靖寛
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学・湘南キャンパス
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] 第一原理分子軌道計算を用いたSi・Al化合物の絶縁破壊電界の推定2010
- Author(s)
  関洋, 澁谷寧浩, 野平博司, 小林大輔, 泰岡顕治, 廣瀬和之
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎県長崎市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] Study on Chemical Bonding States at high-κ/Si and high-κ/Ge Interfaces by XPS2010
- Author(s)
  Hiroshi Nohira
- Organizer
  2010 10th IEEE International Conference on Solid-State and Integrated Circuit
- Place of Presentation
  上海(中国)(招待講演)
- Year and Date
  2010-11-03
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] 格子分極起因の誘電率推定法についての考察2010
- Author(s)
  澁谷寧浩,小林大輔,野平博司,廣瀬和之
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] Study of HfO2/Si/Strained-Ge/SiGe Using Angle Resolved X-ray Photoelectron2010
- Author(s)
  Arata Komatsu, Kentarou Nasu, Yusuke Hoshi, Toru Kurebayashi, Kentarou Sawano, Maksym Myronov, Hiroshi Nohira, Yasuhiro Shiraki
- Organizer
  218th Meeting of The Electrochemical Society
- Place of Presentation
  Las Vegas (USA)
- Year and Date
  2010-10-12
- Data Source
  KAKENHI-PROJECT-21246003
[Presentation] XPS Study on Chemical Bonding States of High-k Gate Stacks for Advanced CMOS2010
- Author(s)
  Hiroshi Nohira
- Organizer
  217th Meeting of The Electrochemical Society
- Place of Presentation
  Vancouver, Canada
- Year and Date
  2010-04-27
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] 格子分極起因の誘電率推定法についての考察2010
- Author(s)
  澁谷寧浩, 小林大輔, 野平博司, 廣瀬和之
- Organizer
  2010年秋季第71画応用物理学会学術講演会
- Place of Presentation
  長崎県長崎市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] Study of HfO_2/Si/Strained-Ge/SiGe Using Angle Resolved X-ray Photoelectron Spectroscopy2010
- Author(s)
  Arata Komatsu, Kentarou Nasu, Yusuke Hoshi, Toru Kurebayashi, Kentarou Sawano, Maksym Myronov, Hiroshi Nohira, and Yasuhiro Shiraki
- Organizer
  218th Meeting of The Electrochemical Society
- Place of Presentation
  Las Vegas, NV, USA
- Year and Date
  2010-10-13
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] 角度分解X線光電子分光法によるHfO_2/Si/歪Ge/SiGe構造の評価II2010
- Author(s)
  小松新, 那須賢太郎, 星裕介, 榑林徹, 澤野憲太郎, ミロノフマクシム, 野平博司, 白木靖寛
- Organizer
  2010年秋季第71回応用物理学会学術講演会,予稿集, 15p-ZA-12
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] Estimation technique f or optical dielectric constant of Si an d Al compounds2009
- Author(s)
  K. Hirose, S. Igarashi, D. Kobayashi, and H. Nohira
- Organizer
  11th International Conference on Electronic Spectroscopy & Structure(ICESS-11)
- Place of Presentation
  Nara
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] CeO2/La2O3/Si(100)構造の熱安定性(2)2009
- Author(s)
  野平博司,今陽一郎,北村幸司,幸田みゆき,角嶋邦之,岩井洋
- Organizer
  第56回応用物理学関係連合会講演会
- Place of Presentation
  茨城県つくば市
- Year and Date
  2009-04-02
- Data Source
  KAKENHI-PROJECT-19560026
[Presentation] Estimation technique for optical dielectric constant of Si and Al compounds2009
- Author(s)
  廣瀬和之, 五十嵐智, 小林大輔, 野平博司
- Organizer
  11th International Conference on Electronic Spectroscopy & Structure(ICESS-11)
- Place of Presentation
  Nara
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 第一原理計算を用いたSiO_2/Si界面の誘電率推定2009
- Author(s)
  五十嵐智,小林大輔,野平博司,廣瀬和之
- Organizer
  2009年秋期第70回応用物理学会学術講演会
- Place of Presentation
  富山市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 第一原理計算を用いたSiO_2多形間の誘電率の違いについての検討2009
- Author(s)
  五十嵐智、小林大輔、野平博司、廣瀬和之
- Organizer
  第55回応用物理学会関係連合講演会
- Place of Presentation
  つくば
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-18360026
[Presentation] Influence of Post Deposition Annealing on Compositional Depth Profile and Chemical Structures of CeO2/La2O3/Si(100)2009
- Author(s)
  野平博司, 今陽一郎, 北村幸司, 幸田みゆき, 角嶋邦之, 岩井洋
- Organizer
  応用物理学会薄膜・表面物理分科会/シリコンテクノロジー分科会共催ゲートスタック研究会-材料・プロセス・評価の物理-(第14回研究会)
- Place of Presentation
  三島
- Year and Date
  2009-01-23
- Data Source
  KAKENHI-PROJECT-19560026
[Presentation] Influence of Post Deposition Annealing on Compositional Depth Profile and Chemical Structures of CeO_2/La_2O_3/Si(100)2009
- Author(s)
  野平博司
- Organizer
  応用物理学会薄膜・表面物理分科会/シリコンテクノロジー分科会共催ゲートスタック研究会-材料・プロセス・評価の物理-(第14回研究会)
- Place of Presentation
  三島
- Year and Date
  2009-01-23
- Data Source
  KAKENHI-PROJECT-19560026
[Presentation] SrO/La_2O_3/CeO_2/Si(100)構造の熱安定性2009
- Author(s)
  野平博司
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学五福キャンパス
- Year and Date
  2009-09-08
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] Annealing-temperature Dependence of Compositional Depth Profiles and Chemical Bonding States of CeOx/LaOx/Si and LaOx/CeOx/Si Structure2009
- Author(s)
  野平博司
- Organizer
  Electrochemical Society Inc.
- Place of Presentation
  ウィーン、オーストリア
- Year and Date
  2009-10-06
- Data Source
  KAKENHI-PROJECT-21560035
[Presentation] 第一原理計算を用いた絶縁膜の誘電率推定2009
- Author(s)
  五十嵐智、小林大輔、野平博司、廣瀬和之
- Organizer
  ゲートスタック研究会 -材料・プロセス・評価の物理- 第14回
- Place of Presentation
  三島
- Year and Date
  2009-01-13
- Data Source
  KAKENHI-PROJECT-18360026
[Presentation] 第一原理計算を用いたSiO_2/Si界面の誘電率推定2009
- Author(s)
  五十嵐智, 小林大輔, 野平博司, 廣瀬和之
- Organizer
  2009年秋期第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] Study on Compositional Tran-sition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron2009
- Author(s)
  T. Suwa, T. Aratani, M. Higuchi, S. Sugawa, E. Ikenaga, J. Ushio, H. Nohira, A. Teramoto, T. Ohmi, T. Hattori
- Organizer
  Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2009)
- Place of Presentation
  Busan, Korea
- Year and Date
  2009-06-25
- Data Source
  KAKENHI-PROJECT-19360014
[Presentation] CeO_2/La_2O_3/Si(100)構造の熱安定性(2)2009
- Author(s)
  野平博司
- Organizer
  第56回応用物理学関係連合会講演会
- Place of Presentation
  茨城県つくば市
- Year and Date
  2009-04-02
- Data Source
  KAKENHI-PROJECT-19560026
[Presentation] LaOx/ScOx/Si界面組成遷移層の化学結合状態の熱処理温度依存性2008
- Author(s)
  竹永祥則,松田徹,野平博司,椎野泰洋,角嶋邦之,パールハットアハメト,筒井一生,岩井洋
- Organizer
  応用物理学会薄膜・表面物理分科会/シリコンテクノロジー分科会共催ゲートスタック研究会 -材料・プロセス・評価の物理-(第13回研究会)
- Place of Presentation
  三島.
- Year and Date
  2008-01-14
- Data Source
  KAKENHI-PROJECT-19560026
[Presentation] CeO2/La2O3/Si(100)構造の熱安定性2008
- Author(s)
  野平博司,今陽一郎,北村幸司,幸田みゆき,角嶋邦之,岩井洋
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  愛知県春日井市・中部大学
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PROJECT-19560026
[Presentation] Annealing-temperature Dependence of Compositional Depth Profile and Chemical Structures of LaOx/ScOx/Si and ScOx/LaOx/Si Interfacial Transition Layer2008
- Author(s)
  Hiroshi Nohira, Yoshinori Takenaga, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui and Hiroshi Iwai
- Organizer
  Electrochemical Society
- Place of Presentation
  Hawai
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PROJECT-19560026
[Presentation] Relationship between the dipole moment induced in photoemission process and the optical dielectric constant2008
- Author(s)
  K. Hirose, D. Kobayashi, H. Suzuki, S. Igarashi, H. Nohira
- Organizer
  Dielectric Thin Films for Future ULSI Devices : Science and Technology
- Place of Presentation
  Ookayama
- Year and Date
  2008-11-05
- Data Source
  KAKENHI-PROJECT-18360026
[Presentation] CeO_2/La_2O_3/Si(100)構造の熱安定性2008
- Author(s)
  野平博司
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  愛知県春日井市・中部大学
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PROJECT-19560026
[Presentation] HfO2/SiO2/Si 構造で観察されるHf 光電子スペクトルのブロードニング2008
- Author(s)
  阿部泰宏, 宮田典幸, 池永英司, 鈴木治彦, 北村幸司, 五十嵐智, 野平博司
- Organizer
  第55 回応用物理学関係連合講演会
- Place of Presentation
  日本大学理工学部(船橋)
- Data Source
  KAKENHI-PROJECT-19360149
[Presentation] First-principles calculation of the Slater transition state for estimating optical dielectric constants of Si and Al dielectric compounds2008
- Author(s)
  K. Hirose, D. Kobayashi, H. Suzuki, S. Igarashi, H. Nohira
- Organizer
  Solid State Device and Materials
- Place of Presentation
  Tsukuba
- Year and Date
  2008-09-23
- Data Source
  KAKENHI-PROJECT-18360026
[Presentation] 第一原理計算を用いた絶縁膜の誘電率推定2008
- Author(s)
  五十嵐智、鈴木治彦、小林大輔、野平博司、廣瀬和之
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  春日井市
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-18360026
[Presentation] Annealing-temperature Dependence of Compositional Depth Profile and Chemical Structures of LaOx/SCOx/Si and ScOx/LaOx/Si Interfacial Transition Layer2008
- Author(s)
  野平博司
- Organizer
  Electrochemical Society
- Place of Presentation
  Washington
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PROJECT-19560026
[Presentation] First-principles calculation of the Slater transition state for estimating optical dielectric constants of Si and Al dielectric compounds2008
- Author(s)
  K. Hirose, H. Suzuki, D. Kobayashi, H. Nohira
- Organizer
  SiO_2 2008
- Place of Presentation
  Saint-Etienne
- Year and Date
  2008-06-30
- Data Source
  KAKENHI-PROJECT-18360026
[Presentation] Angle-Resolved Photoelectron Spectroscopy Study on Ultrathin Gate Dielectrics2007
- Author(s)
  野平博司
- Organizer
  Electrochemical Society
- Place of Presentation
  Washington
- Year and Date
  2007-10-09
- Data Source
  KAKENHI-PROJECT-19560026
[Presentation] Relationship between optical dielectric constant and XPS relative chemical shift of 1s and 2p levels for dielectric compounds2007
- Author(s)
  K. Hirose, H. Suzuki, H. Nohira, E. Ikenaga, D. Kobayashi, T. Hattroi
- Organizer
  13^<th> International Conference on Surface Science
- Place of Presentation
  Stockholm
- Year and Date
  2007-07-05
- Data Source
  KAKENHI-PROJECT-18360026
[Presentation] Angle-Resolved Photoelectron Spectroscopy Study on Ultrathin Gate Dielectrics2007
- Author(s)
  Hiroshi Nohira, Takeo Hattori
- Organizer
  Electrochemical Society
- Place of Presentation
  Washington.
- Year and Date
  2007-10-09
- Data Source
  KAKENHI-PROJECT-19560026
[Presentation] Al酸化物・窒化物における相対ケミカルシフトと誘電率の関係の検証2006
- Author(s)
  鈴木治彦、松田徹、野平博司、高田恭考、池永英司、小林大輔、小林啓介、服部健雄、廣瀬和之
- Organizer
  第67回応用物理学会学術講演会
- Place of Presentation
  草津
- Year and Date
  2006-08-30
- Data Source
  KAKENHI-PROJECT-18360026
[Presentation] X-ray photoelectron spectroscopy study on dielectric properties of AlN/Al_2O_3 Films2006
- Author(s)
  K. Hirose, H. Suzuki, T. Matsuda, Y. Takenaga, H. Nohira, E. Ikenaga, D. Kobayashi, T. Hattori
- Organizer
  2006 Int. Workshop on Dielectric Thin Films for Future ULSI Device -Science and Technology-
- Place of Presentation
  Kawasaki
- Year and Date
  2006-11-08
- Data Source
  KAKENHI-PROJECT-18360026
[Presentation] X-ray photoelectron spectroscopy study on dielectric properties at gate insulator film/Si interface2006
- Author(s)
  K. Hirose, H. Nohira, D. Kobayashi, T. Hattori
- Organizer
  IEEE 2006 Int. Conf. Solid-State and Integrated Circuit Technology
- Place of Presentation
  Shanghai
- Year and Date
  2006-10-25
- Data Source
  KAKENHI-PROJECT-18360026
[Presentation] XPSを用いたAu/極薄SiO_2界面のバリアハイトの測定2006
- Author(s)
  鈴木治彦、長谷川覚、野平博司、服部健雄、山脇師之、鈴木伸子、小林大輔、廣瀬和之
- Organizer
  応用物理学会分科会シリコンテクノロジー研究会
- Place of Presentation
  広島
- Year and Date
  2006-06-22
- Data Source
  KAKENHI-PROJECT-18360026
[Presentation] Zr Lα線源を用いたAESによるSiO2/Si界面構造の評価
- Author(s)
  天野裕司, 小林大輔, 野平博司, 廣瀬和之
- Organizer
  2015年第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26390072

1. HATTORI Takeo (10061516)

# of Collaborated Projects: 9 results

# of Collaborated Products: 34 results
2. HIROSE Kazuyuki (00280553)

# of Collaborated Projects: 4 results

# of Collaborated Products: 58 results
3. KOBAYASHI Daisuke (90415894)

# of Collaborated Projects: 4 results

# of Collaborated Products: 57 results
4. MIYATA Noriyuki (40358130)

# of Collaborated Projects: 4 results

# of Collaborated Products: 12 results
5. SAWANO Kentarou (90409376)

# of Collaborated Projects: 2 results

# of Collaborated Products: 18 results
6. AKIYA Masahiro (60231833)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
7. KIMURA Kenji (50127073)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. NAKAJIMA Kaoru (80293885)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. TERAMOTO Akinobu (80359554)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
10. SUWA Tomoyuki (70431541)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
11. KINOSHITA Toyohiko (60202040)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. SHIRAKI Yasuhiro (00206286)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
13. MARUIZUMI Takuya (00398893)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. SETO Kenshu (10420241)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. XU Xuejun (80593334)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. XIA Jinsong (00434184)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. NAKAGAWA Kitokazu (40324181)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. MATSUI Toshiaki (20358922)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
19. USAMI Noritaka (20262107)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. IWAI Hiroshi (40313358)

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results
21. OHMI Shun-ichiro (30282859)

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
22. KOBAYASHI Keisuke (50372149)

# of Collaborated Projects: 1 results

# of Collaborated Products: 10 results
23. TAKATA Yasutaka (90261122)

# of Collaborated Projects: 1 results

# of Collaborated Products: 12 results
24. Yamazaki Satoshi (80358241)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
25. Takeuchi Daisuke (10357402)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
26. 奈良純 (30354145)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
27. ABE Yasuhiro

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
28. YAMASAKI takahiro

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
29. SUMITA kyoko

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results

NOHIRA Hiroshi 野平 博司

野平 博司 ノヒラ ヒロシ

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Study of terminal structure and electronic band structure of diamond surface by angle-resolved photoelectron spectroscopyPrincipal Investigator

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Study of high-κ/strained-Ge channel and high-κ/strained-Si channel using X-ray Photoelectron SpectroscopyPrincipal Investigator

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Characterization of high-k gate insulators / Ge channel interface using X-ray photoelectron spectroscopyPrincipal Investigator

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Formation of High-Quality High-κ Dielectrics/Si Interface by Atomic Scale ControlPrincipal Investigator

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Depth Profile of high-κ dielectrics/Si structure using AR-XPSPrincipal Investigator

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NOHIRA Hiroshi 野平博司

野平博司ノヒラヒロシ