Sameshima Toshiyuki 鮫島俊之

… Alternative Names

Samesima Toshiyuki 鮫島俊之

SAMESHIMA Toshiyuki 鮫島俊之

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Researcher Number	30271597
Other IDs	https://orcid.org/0000-0003-2915-2385
Affiliation (Current)	2024: 東京農工大学, 工学(系)研究科(研究院), 産学官連携研究員
Affiliation (based on the past Project Information) *help	2020 – 2023: 東京農工大学, 工学(系)研究科(研究院), 産学官連携研究員 2017 – 2019: 東京農工大学, 工学(系)研究科(研究院), 教授 2012 – 2015: 東京農工大学, 工学(系)研究科(研究院), 教授 2014: 東京農工大学, 共生科学技術研究院, 教授 2013: 東京農工大学, 大学院工学研究院, 教授 … More 2010 – 2012: 東京農工大学, 大学院・工学研究院, 教授 2009 – 2011: 東京農工大学, 共生科学技術研究院, 教授 2008: 東京農工大学, 大学院・共生科学技術研究院, 教授 Less
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related / Electronic materials/Electric materials Except Principal Investigator Electronic materials/Electric materials / Electron device/Electronic equipment / Properties in chemical engineering process/Transfer operation/Unit operation / Science and Engineering
Keywords	Principal Investigator ソーラーセル / キャリヤライフタイム / パッシベーション / 加熱水 / 水蒸気熱処理 / キャリヤ拡散 / マイクロ波吸収 / 光誘起フリーキャリヤ / マイクロ波フリーキャリヤ吸収 / 評価技術 … More / 作製 / カットエッジ / 少数キャリヤ再結合欠陥 / 100℃ / 紫外線 / 純水 / 再結合速度 / ライフタイム / バイアス / 少数キャリヤ / 375 nm紫外レーザダイオード / 活性化 / イオン注入 / PN接合 / 再結合欠陥 / 光侵入長 / キャリヤ濃度 / 実効キャリヤライフタイム / 内蔵電位 / 効少数キャリヤライフタイム / シリコン / パッシベション膜 / 光誘起フリーキャリア / キャリアライフタイム / 低温プロセス技術 / パッシベーション膜 / キャリヤ再接合 / レーザ加熱 / キャリヤ再結合 / AlOx薄膜 / A10_x薄膜 / 酸素プラズマ酸化膜 / 高圧水蒸気熱処理 / 少数キャリヤ実効ライフタイム … More Except Principal Investigator 半導体物性 / マイクロ・ナノデバイス / 電子デバイス / 集積回路 / 不確定性原理 / SiCドット / 光物性 / ナノ材料 / 電子・電気材料 / Si酸化膜 / SiC量子ドット / Si系発光素子 / 量子閉じ込め効果 / ホットイオン注入 / PL発光 / 量子ドット / SiC / ライフタイム / マイクロ波吸収測定 / シリコン / 太陽電池 / マイクロ波吸収 / 少数キャリアライフタイム / 水蒸気熱処理 / ソーラーセル / ナノ界面間力設計 / エアロゾルプロセス / 積層型太陽電池 / 波長変換素子 / リチウム電池電極 / 離散要素法 / コロイド化学プロセス / 凝集分散制御 / ナノ界面設計 / 色素増感太陽電池 / ナノ配列設計 / 界面設計 / ナノ複合体 / ナノ粒子 Less

液体プロセスによる新規低温半導体表面及びカットエッジパッシベーションPrincipal Investigator
- Principal Investigator
  
  鮫島俊之
- Project Period (FY)
  2021 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Tokyo University of Agriculture and Technology
Research on behavior of the recombination defect of minority carriers depending on the internal built in potential in PN junctionsPrincipal Investigator
- Principal Investigator
  
  Samesima Toshiyuki
- Project Period (FY)
  2018 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Tokyo University of Agriculture and Technology
Experimental study on two-dimensional silicon-cabide using hot-carbon-ion implantation technique
- Principal Investigator
  
  Mizuno Tomohisa
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kanagawa University
study on high efficiency solar cell driven by metal workfunctionPrincipal Investigator
- Principal Investigator
  
  Sameshima Toshiyuki
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo University of Agriculture and Technology
Experimental study on two-dimensional silicon
- Principal Investigator
  
  MIZUNO Tomohisa
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Kanagawa University
Application of interface structure designed functional nanoparticles for solar cell devices
- Principal Investigator
  
  KAMIYA Hidehiro
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Properties in chemical engineering process/Transfer operation/Unit operation
- Research Institution
  Tokyo University of Agriculture and Technology
Improvement in Characteristics of Crystalline Silicon Solar Cells by High-Pressure Water Vapor Heat Treatment
- Principal Investigator
  
  HASUMI Masahiko
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo University of Agriculture and Technology
Observation of defects induced by non thermal equilibrium processes and their control used by microwave absorption of free carriersPrincipal Investigator
- Principal Investigator
  
  SAMESHIMA Toshiyuki
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo University of Agriculture and Technology
Study on relaxed/strained semiconductor layer heterostructures fabricated by ion implantation induced relaxation technique of strained semiconductors
- Principal Investigator
  
  MIZUNO Tomohisa
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Kanagawa University
ソースヘテロ構造を用いたバリスティック素子の基盤研究
- Principal Investigator
  
  MIZUNO Tomohisa
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Kanagawa University

[Journal Article] Passivation of cut edges and surfaces of crystalline silicon by heat treatment in liquid water2023
- Author(s)
  Masahiko Hasumi, Toshiyuki Sameshima, and Tomohisa Mizuno
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 62
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21K04134
[Journal Article] 無電極ランプを熱源とした加熱装置によるリンイオン注入300 mm径シリコン基板の活性化2023
- Author(s)
  宮崎智由、鮫島俊之、齋藤宗平、小野寺航、上原琢磨、有馬卓司、蓮見真彦、小林剛、芹澤和泉、久保若菜、上野智雄
- Journal Title
  
  電子情報通信学会論文誌エレクトロニクス
  
  Volume: J106-C Pages: 30-37
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21K04134
[Journal Article] Passivation of cut edges of crystalline silicon by heat treatment in liquid water2023
- Author(s)
  Masahiko Hasumi, Toshiyuki Sameshima and Tomohisa Mizuno
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: SK Pages: SK1022-SK1022
- DOI
  10.35848/1347-4065/acc666
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21K04134, KAKENHI-PROJECT-22K04180
[Journal Article] SiC quantum dot formation in SiO2 layer using double hot-Si+/C+-ion implantation technique2020
- Author(s)
  Mizuno Tomohisa、Kanazawa Rikito、Aoki Takashi、Sameshima Toshiyuki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: SG Pages: SGGH02-SGGH02
- DOI
  10.7567/1347-4065/ab5bc4
- NAID
  210000157669
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06359
[Journal Article] SiC Quantum Dots in Si-Oxide Layer Fabricated by Double Hot-Si+/C+-Ion Implantation Technique2019
- Author(s)
  T. Mizuno, R. Kanazawa, T. Aoki, and T. Sameshima
- Journal Title
  
  Extended Abst. of Solid State Devices and Materials
  
  Volume: - Pages: 887-888
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06359
[Journal Article] MICROWAVE RAPID HEATING SYSTEM USING CARBON HEATING TUBE2019
- Author(s)
  T. Sameshima, T. Kikuchi, T. Uehara, T. Arima, M. Hasumi, T. Miyazaki, G. Kobayashi, and I. Serizawa
- Journal Title
  
  AMPERE
  
  Volume: AMPERE 2019 Pages: 318-326
- DOI
  10.4995/ampere2019.2019.9756
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04225
[Journal Article] Si Surface Orientation Dependence of SiC Nano-Dot Formation in Hot-C+-Ion Implanted Bulk-Si Substrate2019
- Author(s)
  T. Mizuno, M. Yamamoto, T. Aoki, T. Sameshima
- Journal Title
  
  Abst. IEEE Silicon Nanoelectronics Workshop
  
  Volume: - Pages: 115-116
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06359
[Journal Article] SiC nanodot formation in amorphous-Si and poly-Si substrates using a hot-C+-ion implantation technique2019
- Author(s)
  Tomohisa Mizuno, Rikito Kanazawa, Takashi Aoki, and Toshiyuki Sameshima
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SB Pages: SBBJ01-SBBJ01
- DOI
  10.7567/1347-4065/aafb4e
- NAID
  210000135332
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06359
[Journal Article] SiC nano-dot formation in bulk-Si substrate using hot-C+-ion implantation process2019
- Author(s)
  Mizuno Tomohisa、Yamamoto Masaki、Nakada Shinji、Irie Sho、Aoki Takashi、Sameshima Toshiyuki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: 8 Pages: 081004-081004
- DOI
  10.7567/1347-4065/ab2ac9
- NAID
  210000156444
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06359
[Journal Article] SiC Nano-Dot Controlled by Hot-C+-Ion Implantation Conditions in Bulk-Si Substrate for Photonic Devices2018
- Author(s)
  T. Mizuno, S. Nakada, M. Yamamoto, S. Irie, T. Aoki, T. Sameshima
- Journal Title
  
  Abst. IEEE Silicon Nanoelectronics Workshop
  
  Volume: - Pages: 121122-121122
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06359
[Journal Article] SiC Dots in Amorphous-Si and Poly-Si Substrates Fabricated by Hot-C+ -Ion Implantation2018
- Author(s)
  T. Mizuno, R. Kanazawa, Y. Omata, T. Aoki, and T. Sameshima
- Journal Title
  
  Extended Abst. of Solid State Devices and Materials
  
  Volume: - Pages: 803804-803804
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06359
[Journal Article] SiC Nano-Dots in Bulk-Si Substrate Fabricated by Hot-C+-Ion Implantation Technique2017
- Author(s)
  T. Mizuno, S. Nakada, M. Yamamoto, S. Irie, Y. Omata, T. Aoki, and T. Sameshima
- Journal Title
  
  Extended Abst. of SSDM
  
  Volume: - Pages: 597-598
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06359
[Journal Article] Heat treatment in 110oC liquid water used for passivating siliconsurfaces2016
- Author(s)
  T. Nakamura, T. Motoki, J. Ubukata, T. Sameshima, M. Hasumi and T. Mizuno
- Journal Title
  
  Appl. Phys. A.
  
  Volume: 122 Issue: 4
- DOI
  10.1007/s00339-016-9976-z
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25420282
[Journal Article] Passivation of silicon surfaces by heat treatment in liquid water at 110oC2015
- Author(s)
  T. Nakamura, T. Sameshima, M. Hasumi, and T. Mizuno
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 54 Issue: 10 Pages: 106503-106503
- DOI
  10.7567/jjap.54.106503
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25420282
[Journal Article] Photoinduced carrier annihilation in silicon pn junction2015
- Author(s)
  T. Sameshima, T. Motoki, K. Yasuda, T. Nakamura, M. Hasumi, and T. Mizuno
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 54 Issue: 8 Pages: 081302-081302
- DOI
  10.7567/jjap.54.081302
- NAID
  210000145492
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25420282
[Journal Article] Behavior of Photo Induced Minority Carrier Lifetime in PN Junction with Different Bias Voltages2015
- Author(s)
  T. Sameshima and M. Hasumi
- Journal Title
  
  Energy Procedia
  
  Volume: 84 Pages: 110-117
- DOI
  10.1016/j.egypro.2015.12.303
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25420282
[Journal Article] Impurity doping effects on impurity band structure modulation2015
- Author(s)
  T. Mizuno, Y. Nagamine, Y. Suzuki, Y. Nakahara, Y. Nagata, T. Aoki, and T. Sameshima
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 54 Issue: 4S Pages: 04DC05-04DC05
- DOI
  10.7567/jjap.54.04dc05
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24560422
[Journal Article] Multi junction solar cells using band-gap induced cascaded light absorption2014
- Author(s)
  Toshiyuki Sameshima, Hitomi Nomura, Shinya Yoshidomi, and Masahiko Hasumi
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 53 Issue: 5S1 Pages: 05FV07-05FV07
- DOI
  10.7567/jjap.53.05fv07
- NAID
  210000143904
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560360
[Journal Article] Photo induced minority carrier annihilation at crystalline silicon surface in metal oxide semiconductor structure2014
- Author(s)
  Toshiyuki Sameshima, Jun Furukawa, Tomohiko Nakamura, Satoshi Shigeno, Tomohito Node, Shinya Yoshidomi, and Masahiko Hasumi
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 53 Issue: 3 Pages: 031301-031301
- DOI
  10.7567/jjap.53.031301
- NAID
  210000143406
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560360, KAKENHI-PROJECT-25420282
[Journal Article] Crystal direction dependence of quantum confinement effects of two-dimensional Si layers fabricated on silicon-on-quartz substrates: modulation of phonon spectra and energy-band structures2014
- Author(s)
  T. Mizuno, Y. Nagata, Y. Suzuki, Y. Nakahara, T. Aoki, and T. Sameshima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Issue: 4S Pages: 04EC09-04EC09
- DOI
  10.7567/jjap.53.04ec09
- NAID
  210000143563
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560422, KAKENHI-PROJECT-25420282
[Journal Article] Activation of silicon implanted with phosphorus and boron atoms by microwave annealing with carbon powder as a heat source2014
- Author(s)
  Masahiko Hasumi, Tomohiko Nakamura, Shinya Yoshidomi, and Toshiyuki Sameshima
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 53 Issue: 5S1 Pages: 05FV05-05FV05
- DOI
  10.7567/jjap.53.05fv05
- NAID
  210000143902
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560360
[Journal Article] n+/p+-Single Doping Effects on Impurity Band Structure Modulation2014
- Author(s)
  T. Mizuno, Y. Nakahara, Y. Nagamine, Y. Suzuki, Y. Nagata, T. Aoki, and T. Sameshima
- Journal Title
  
  Extended Abst. of SSDM
  
  Volume: なし Pages: 854-855
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24560422
[Journal Article] Activation of silicon implanted with phosphorus and boron atoms by microwave annealing with carbon powder as a heat source2014
- Author(s)
  M. Hasumi, T. Nakamura, S. Yoshidomi, and T. Sameshima
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 53
- NAID
  210000143902
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560360
[Journal Article] Quantum confinement effects in doped two-dimensional Si layers: novel device design for two-dimensional pn-junction structures2014
- Author(s)
  T. Mizuno, Y. Nakahara, Y. Nagata, Y. Suzuki, T. Aoki, and T. Sameshima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Issue: 4S Pages: 04EC08-04EC08
- DOI
  10.7567/jjap.53.04ec08
- NAID
  210000143562
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560422, KAKENHI-PROJECT-25420282
[Journal Article] Multi junction solar cells using band-gap induced cascaded light absorption2014
- Author(s)
  T. Sameshima, H. Nomura, S. Yoshidomi, and M. Hasumi
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 53
- NAID
  210000143904
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560360
[Journal Article] Photo induced minority carrier annihilation at crystalline silicon surface in metal oxide semiconductor structure2014
- Author(s)
  T. Sameshima, J. Furukawa, T. Nakamura, S. Shigeno, T. Node, S. Yoshidomi, and M. Hasumi
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 53
- NAID
  210000143406
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560360
[Journal Article] Experimental Study on Surface-Orientation/Strain Dependence of Phonon Confinement Effects and Band Structure Modulation in Two-Dimensional Si Layers2013
- Author(s)
  Tomohisa Mizuno, Takashi Aoki, Yuhsuke Nagata, Yuhta Nakahara, and Toshiyuki Sameshima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 52 Issue: 4S Pages: 04CC13-04CC13
- DOI
  10.7567/jjap.52.04cc13
- NAID
  210000142000
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560422
[Journal Article] Investigation of Silicon Surface Passivation by Microwave Annealing, Jpn2013
- Author(s)
  T. Sameshima
- Journal Title
  
  J. Appl. Phys
  
  Volume: Vol.52 Issue: 1R Pages: 11801-11801
- DOI
  10.7567/jjap.52.011801
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560292, KAKENHI-PROJECT-23560360
[Journal Article] Minority Carrier Annihilation in Lateral Direction Caused by Recombination Defects2013
- Author(s)
  T. Sameshima
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: Vol.52 Issue: 4R Pages: 41303-41303
- DOI
  10.7567/jjap.52.041303
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560292
[Journal Article] Anisotropic Phonon-Confinement-Effects/Band-Structure-Modulation of Two-Dimensional Si Layers Fabricated on Silicon-on-Quartz Substrates2013
- Author(s)
  T. Mizuno, Y. Nagata, Y. Suzuki, Y. Nakahara, T. Tanaka, T. Aoki and T. Sameshima
- Journal Title
  
  Extended Abst. of SSDM
  
  Volume: なし Pages: 96-97
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560422
[Journal Article] Physical Limitation of pn Junction in Two Dimensional Si Layers for Future CMOS2013
- Author(s)
  T. Mizuno, Y. Nakahara, Y. Nagata, Y. Suzuki, Y. Kubodera, Y. Shimizu, T. Aoki, and T. Sameshima
- Journal Title
  
  Extended Abst. of SSDM
  
  Volume: なし Pages: 696-697
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560422
[Journal Article] Investigation of Silicon Surface Passivation by Microwave Annealing Using Multiple-Wavelength Light-Induced Carrier Lifetime Measurement2013
- Author(s)
  T. Sameshima, R. Ebina, K. Betsuin, Y. Takiguchi, and M. Hasumi
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 52
- NAID
  210000141723
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560360
[Journal Article] Heat treatment of amorphous silicon p-i-n solar cells with high-pressure H2O vapor2012
- Author(s)
  J. Takenezawa, M. Hasumi, T. Sameshima, T. Koida, T. Kaneko, M. Karasawa, and M. Kondo
- Journal Title
  
  J. Non-Cryst. Solids
  
  Volume: 358
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560360
[Journal Article] Experimental Study of Silicon Monolayers for Future Extremely Thin Silicon-on-Insulator Devices: Phonon/Band Structures Modulation Due to Quantum Confinement Effects2012
- Author(s)
  Tomohisa Mizuno, Keisuke Tobe, Yohichi Maruyama, and Toshiyuki Sameshima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 51 Issue: 2S Pages: 02BC03-02BC03
- DOI
  10.1143/jjap.51.02bc03
- NAID
  210000140201
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560422
[Journal Article] Laser Induced Formation of Buried Void Layer in Silicon2012
- Author(s)
  T. Sameshima, Y. Kanda , M. Hasumi, J. Tatemichi, Y. Inouchi, M. Naito
- Journal Title
  
  J. Laser Micro/Nanoengineering
  
  Volume: Vol.7 Issue: 1 Pages: 93-96
- DOI
  10.2961/jlmn.2012.01.0018
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560292
[Journal Article] Surface Passivation of Crystalline Silicon by Combination of Amorphous Silicon Deposition with High-Pressure H2O Vapor Heat Treatment2012
- Author(s)
  T. Sameshima, T. Nagao, M. Hasumi, A. Shuku, E. Takahashi, and Y. Andoh
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 51
- NAID
  210000140378
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560360
[Journal Article] Minority Carrier Lifetime Behavior in Crystalline Silicon in Rapid Laser Heating2012
- Author(s)
  T. Sameshima, K. Betsuin, T. Mizuno and N. Sano
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: Vol.51 Issue: 3S Pages: 03CA04-03CA04
- DOI
  10.1143/jjap.51.03ca04
- NAID
  210000140376
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560292
[Journal Article] Infrared semiconductor laser irradiation used for crystallization of silicon thin films2012
- Author(s)
  Toshiyuki Sameshima
- Journal Title
  
  Journal of Non-Crystalline Solids
  
  Volume: 358 Issue: 17 Pages: 2162-2165
- DOI
  10.1016/j.jnoncrysol.2011.12.030
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560292
[Journal Article] Surface Passivation of Crystalline Silicon by Combination of Amorphous Silicon Deposition with High-Pressure H_2O Vapor Heat Treatment2012
- Author(s)
  T. Sameshima, T. Nagao, M. Hasumi, A.Shuku, E.Takahashi
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: Vol.51 Issue: 3S Pages: 03CA06-03CA06
- DOI
  10.1143/jjap.51.03ca06
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560292, KAKENHI-PROJECT-23560360
[Journal Article] Heat Treatment of Amorphous Silicon p-i-n Solar Cells with High-Pressure H2O Vapor2012
- Author(s)
  J. Takenezawa
- Journal Title
  
  Journal of Non-Crystalline Solids
  
  Volume: 358 Issue: 17 Pages: 2285-2288
- DOI
  10.1016/j.jnoncrysol.2012.01.057
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560292, KAKENHI-PROJECT-23560360
[Journal Article] Characterization of Plasma-Irradiated SiO_2/Si Interface Properties by Photoinduced-Carrier Microwave Absorption Method2011
- Author(s)
  M. Hasumi, J. Takenezawa, T. Nagao, and T. Sameshima
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: Vol.50 Issue: 3S Pages: 03CA03-03CA03
- DOI
  10.1143/jjap.50.03ca03
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560292
[Journal Article] Characterization of Plasma-Irradiated SiO_2/Si Interface Properties by Photoinduced-Carrier Microwave Absorption Method2011
- Author(s)
  Masahiko Hasumi, Jun Takenezawa, Tomokazu Nagao, Toshiyuki Sameshima
- Journal Title
  
  Jpn.J.Appl.Phys
  
  Volume: Vol.50
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560292
[Journal Article] Fabrication of Aluminum Oxide Films by Aluminum Metal Evaporation in Oxygen Gas Atmosphere for Surface Passivation2011
- Author(s)
  M. Hasumi, Y. Kanda, S. Yoshidomi, and T. Sameshima
- Journal Title
  
  Technical Digest of the 24^<th> Int. Photovoltaic Solar Energy Conf
- Data Source
  KAKENHI-PROJECT-23560360
[Journal Article] Fabrication of Aluminum Oxide Films by Aluminum Metal Evaporation in Oxygen Gas Atmosphere for Surface Passivation2011
- Author(s)
  M. Hasumi, Y. Kanda, S. Yoshidomi, and T. Sameshima
- Journal Title
  
  Technical Digest of the 24th Int. Photovoltaic Solar Energy Conf.
  
  Volume: 1
- Data Source
  KAKENHI-PROJECT-23560360
[Journal Article] Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors2011
- Author(s)
  T. Mizuno, M. Hasegawa, and T. Sameshima
- Journal Title
  
  Key Engineering Materials
  
  Volume: 470 Pages: 72-78
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560371
[Journal Article] Minority Carrier Lifetime Measurements by Photo-Induced Carrier Microwave Absorption Method2011
- Author(s)
  T. Sameshima, T. Nagao, S. Yoshidomi, K. Kogure, and M. Hasumi
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: Vol.50 Issue: 3S Pages: 03CA02-03CA02
- DOI
  10.1143/jjap.50.03ca02
- NAID
  210000070162
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560292
[Journal Article] Infrared semiconductor laser irradiation used for crystallization of silicon thin films2011
- Author(s)
  T. Sameshima
- Journal Title
  
  Journal of Non-Crystalline Solids
  
  Volume: Vol.358 Pages: 2162-2165
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560292
[Journal Article] Minority Carrier Lifetime Measurements by Photo-Induced Carrier Microwave Absorption Method2011
- Author(s)
  Toshiyuki Sameshima, Tomokazu Nagao, Shinya Yoshidomi, Kazuya Kogure, Masahiko Hasumi
- Journal Title
  
  Jpn.J.Appl.Phys
  
  Volume: Vol.50
- NAID
  210000070162
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560292
[Journal Article] New Source Heterojunction Structures with Relaxed/Strainal Semiconductors for Quasi-Ballistic Complementary Metal-Oxide-Semiconductor Transistors : Relaxation Technique of Strained Substrates and Design of Sub-10nm Devices2010
- Author(s)
  Tomohisa Mizuno, Naoki Mizoguchi, Kotaio Tanimoto, Tomoaki Yamauchi, Mitsuo Hasegawa, Toshiyuki Sameshima, Tsutomu Tezuka
- Journal Title
  
  Jpn.J.Appl.Phys. 49
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035014
[Journal Article] Crystalline Silicon Solar Cells with Two Different Metals2010
- Author(s)
  T. SAMESHIMA, K. KOGURE, M. HASUMI
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: Vol.49 Issue: 11R Pages: 110205-110205
- DOI
  10.1143/jjap.49.110205
- NAID
  40017377249
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560292
[Journal Article] New Source Heterojunction Structures with Relaxed-/Strained-Semiconductors for Quasi-Ballistic Complementary-Metal-Oxide-Semiconductor(CMOS) Transistors : Relaxation Technique of Strained-Substrates and Design of Sub-10nm Devices2010
- Author(s)
  Yamauchi, M. Hasegawa, T. Sameshima, and T. Tezuka
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 49 Pages: 4-13
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560371
[Journal Article] New Source Heterojunction Structures with Relaxed/Strained Semiconductors for Quasi-Ballistic Complementary Metal-Oxide-Semiconductor Transistors : Relaxation Technique of Strained Substrates and Design of Sub-10nm Devices2010
- Author(s)
  Tomohisa Mizuno, Naoki Mizoguchi, Kotaro Tanimoto, Tomoaki Yamauchi, Mitsuo Hasegawa, Toshiyuki Sameshima, Tsutomu Tezuka
- Journal Title
  
  Jpn.J.Appl.Phys. 49
- NAID
  210000068211
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560371
[Journal Article] Crystalline Silicon Solar Cells with Two Different Metals2010
- Author(s)
  Toshiyuki SAMESHIMA, Kazuya KOGURE, Masahiko HASUMI
- Journal Title
  
  Jpn.J.Appl.Phys
  
  Volume: Vol.49 Pages: 110205-110205
- NAID
  40017377249
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560292
[Journal Article] Source Heterojunction with Relaxed/Strained-Layers for Quasi-Ballistic CMOS Transistors2010
- Author(s)
  T.Mizuno, M.Hasegawa, T.Sameshima
- Journal Title
  
  Extend.Abst.ISTESNE
  
  Pages: 66-66
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560371
[Journal Article] Source Heterojunction with Relaxed/Strained-Layers for Quasi-Ballistic CMOS Transistors2010
- Author(s)
  T. Mizuno, M. Hasegawa, and T. Sameshima
- Journal Title
  
  ISTESNE
  
  Pages: 66-66
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560371
[Journal Article] Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors using Ion Implantation Induced Relaxation Technique of Strained-Substrates2009
- Author(s)
  T.Mizuno, N.Mizoguchi, K..Tanimoto, T.Yamauchi, T.Tezuka, T.Sameshima
- Journal Title
  
  Ext.Ahstr.SSDM
  
  Pages: 769-770
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035014
[Journal Article] Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors using Ion Implantation Induced Relaxation Technique of Strained-Substrates2009
- Author(s)
  T. Mizuno, N. Mizoguchi, K. Tanimoto, T. Yamauchi, T. Tezuka, and T. Sameshima
- Journal Title
  
  Extended Abst. of SSDM
  
  Pages: 769-769
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560371
[Journal Article] Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors using Ion Implantation Induced Relaxation Technique of Strained-Substrates2009
- Author(s)
  T.Mizuno, N.Mizoguchi, K.Tanimoto, T.Yamauchi, T.Tezuka, T.Sameshima
- Journal Title
  
  Ext.Abstr.SSDM
  
  Pages: 769-770
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560371
[Patent] 光誘起キャリヤライフタイム測定方法及び光誘起キャリヤライフタイム測定装置2016
- Inventor(s)
  鮫島俊之
- Industrial Property Rights Holder
  鮫島俊之
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-025808
- Filing Date
  2016-02-15
- Data Source
  KAKENHI-PROJECT-25420282
[Patent] 半導体基板の処理方法2012
- Inventor(s)
  鮫島俊之
- Industrial Property Rights Holder
  国立大学法人東京農工大学
- Industrial Property Number
  2012-034288
- Filing Date
  2012-02-20
- Data Source
  KAKENHI-PROJECT-22560292
[Patent] 光誘起キャリヤライフタイム測定装置及び光誘起キャリヤライフタイム測定方法2011
- Inventor(s)
  鮫島俊之
- Industrial Property Rights Holder
  国立大学法人東京農工大学
- Industrial Property Number
  2011-276215
- Filing Date
  2011-12-16
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] Nondestructive Investigation of Impurity Activation using Microwave Transmission Measurement2023
- Author(s)
  Masahiko Hasumi, Toshiyuki Sameshima, and Tomohisa Mizuno
- Organizer
  20th Thin Film Materials & Devices Meeting, Kyoto, 12a-A27-6, 2023
- Data Source
  KAKENHI-PROJECT-21K04134
[Presentation] Properties of complete absorption of 2.45 GHz microwave and heating by the two conductive plate system2023
- Author(s)
  Toshiyuki Sameshima, Tomoyoshi Miyazaki, Masahiko Hasumi, Wakana Kubo, Tomo Ueno, and Tomohisa Mizuno
- Organizer
  20th Thin Film Materials & Devices Meeting, Kyoto, 10p-P36, 2023.
- Data Source
  KAKENHI-PROJECT-21K04134
[Presentation] Passivation of cut edges of crystalline silicon by heat treatment in liquid water2022
- Author(s)
  Masahiko Hasumi, Toshiyuki Sameshima, and Tomohisa Mizuno
- Organizer
  33th International Photovoltaic Science and Engineering Conference (PVSEC33)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04134
[Presentation] 935 GHz マイクロ波透過測定を用いたシリコンの電気特性評価2021
- Author(s)
  蓮見真彦、鮫島俊之、水野智久
- Organizer
  薄膜材料デバイス研究会
- Data Source
  KAKENHI-PROJECT-18K04225
[Presentation] Non-Destructive 9.35 GHz Microwave Sensing System for Investigating Electrical Properties of Silicon2020
- Author(s)
  T. Sameshima, M. Hasumi, T. Mizuno
- Organizer
  2020 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04225
[Presentation] 多結晶SiとアモルファスSi基板へのホットC＋イオン注入法によるSiCナノドットの形成(Ⅱ):C+ドーズ依存性2019
- Author(s)
  金澤力斗, 青木孝，鮫島俊之，水野智久
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] Si Surface Orientation Dependence of SiC Nano-Dot Formation in Hot-C+-Ion Implanted Bulk-Si Substrate2019
- Author(s)
  T. Mizuno, M. Yamamoto, T. Aoki, T. Sameshima
- Organizer
  IEEE Silicon Nanoelectronics Workshop
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] バルクSi基板へのホットC＋イオン注入法によるSiCナノドット形成 (Ⅳ)：面方位依存性2019
- Author(s)
  山本将輝，青木孝，鮫島俊之，水野智久
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] ホット-ダブルSi+/C＋イオン注入法を用いた酸化膜中のSiC量子ドットの形成2019
- Author(s)
  金澤力斗, 青木孝，鮫島俊之，水野智久
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] SiC Quantum Dots in Si-Oxide Layer Fabricated by Double Hot-Si+/C+-Ion Implantation Technique2019
- Author(s)
  T. Mizuno, R. Kanazawa, T. Aoki, and T. Sameshima
- Organizer
  International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] バルクSi基板へのホットC＋注入法によるSiCナノドット形成　(III)：Cドーズ量依存性2018
- Author(s)
  入江翔, 山本将輝, 中田真史，小又祐介，青木孝，鮫島俊之，水野智久
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] PHOTO-INDUCED MINORITY CARRIER ANNIHILATION FOR SILICON SAMPLES WITH METAL INSULATOR SEMICONDUCTOR STRUCTURE2018
- Author(s)
  Toshiyuki Sameshima
- Organizer
  GRAND RENEWABLE ENERGY 2018 International Conference and Exhibition
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04225
[Presentation] SiC Dots in Amorphous-Si and Poly-Si Substrates Fabricated by Hot-C+ -Ion Implantation2018
- Author(s)
  T. Mizuno, R. Kanazawa, Y. Omata, T. Aoki, and T. Sameshima
- Organizer
  International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] REDUCTION IN CONNECTING RESISTIVITY OF INTERMEDIATE ADHESIVE LAYER FOR MECHANICALLY STACKED MULTI-JUNCTION SOLAR CELLS2018
- Author(s)
  Toshiyuki Sameshima
- Organizer
  GRAND RENEWABLE ENERGY 2018 International Conference and Exhibition
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04225
[Presentation] Surface Passivation of Crystalline Silicon by Heat Treatment in Liquid Water and Its Application to Improve the Interface Properties of Metal-Oxide-Semiconductor Structures2018
- Author(s)
  Toshiyuki Sameshima
- Organizer
  THE 25th INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04225
[Presentation] 多結晶SiへのホットC＋イオン注入法によるSiCナノドットの形成2018
- Author(s)
  金澤力斗，小又祐介，井口裕輔，青木孝，鮫島俊之，水野智久
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] バルクSi基板へのホットC＋イオン注入法によるSiCナノドットの形成(Ⅱ) :イオン注入温度依存性2018
- Author(s)
  中田真史，山本将輝，入江翔，小又祐介，青木孝，鮫島俊之，水野智久
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] バルクSi基板中のSiCナノドットサイズのプロセス依存性2018
- Author(s)
  山本将輝，青木孝，鮫島俊之，水野智久
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] 多結晶SiとアモルファスSi基板へのホットC＋イオン注入法によるSiCナノドットの形成2018
- Author(s)
  金澤力斗, 青木孝，鮫島俊之，水野智久
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] SiC Nano-Dot Controlled by Hot-C+-Ion Implantation Conditions in Bulk-Si Substrate for Photonic Devices2018
- Author(s)
  T. Mizuno, S. Nakada, M. Yamamoto, S. Irie, T. Aoki, T. Sameshima
- Organizer
  IEEE Silicon Nanoelectronics Workshop
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] バルク Si 基板へのホット C＋イオン注入法による SiC ナノドットの形成2017
- Author(s)
  中田真史，山本将暉，入江翔，小又祐介，青木孝，鮫島俊之，水野智久
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] SiC Nano-Dots in Bulk-Si Substrate Fabricated by Hot-C+-Ion Implantation Technique2017
- Author(s)
  T. Mizuno, S. Nakada, M. Yamamoto, S. Irie, Y. Omata, T. Aoki, and T. Sameshima
- Organizer
  International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] ＰＮ接合の電圧印加による光誘起少数キャリヤライフタイム挙動の研究2015
- Author(s)
  鮫島俊之, 中村友彦, 蓮見真彦
- Organizer
  Thin Film Materials & Devices Meeting
- Place of Presentation
  龍谷大学アバンティ響都ホール(京都府京都市)
- Year and Date
  2015-10-30
- Data Source
  KAKENHI-PROJECT-25420282
[Presentation] Laser Induced Minority Carrier Lifetime in PN Junction2015
- Author(s)
  T. Sameshima, T. Nakamura, S. Yoshidomi, M. Hasumi
- Organizer
  Symposium on Laser Precision Microfabrication
- Place of Presentation
  北九州国際会議場(福岡県北九州市)
- Year and Date
  2015-05-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420282
[Presentation] Behavior of Photo Induced Minority Carrier Lifetime in PN Junction with Different Bias Voltages2015
- Author(s)
  T. Sameshima, M. Hasumi
- Organizer
  E-Mater. Res. Soc. Symp．
- Place of Presentation
  France, Lille
- Year and Date
  2015-05-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420282
[Presentation] Annihilation Properties of Photo-Induced Carrier in Silicon PN Junction2015
- Author(s)
  M. Hasumi, T. Sameshima, T. Motoki, T. Nakamura and T. Mizuno
- Organizer
  Active Matrix Flat Panel Displays
- Place of Presentation
  龍谷大学アバンティ響都ホール(京都府京都市)
- Year and Date
  2015-07-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420282
[Presentation] マイクロ波急速加熱によるシリコンの活性化とドーピングの検討2015
- Author(s)
  太田康介, 木村駿介, 蓮見真彦, 鈴木歩太, 牛島満, 鮫島俊之
- Organizer
  Thin Film Materials & Devices Meeting
- Place of Presentation
  龍谷大学アバンティ響都ホール(京都府京都市)
- Year and Date
  2015-10-30
- Data Source
  KAKENHI-PROJECT-25420282
[Presentation] Passivation of Silicon Surfaces by Treatment in Water at 110oC2015
- Author(s)
  T. Nakamura, T. Sameshima, M. Hasumi, T. Mizuno
- Organizer
  Mater. Res. Soc. Symp. Proc.
- Place of Presentation
  USA, San Francisco
- Year and Date
  2015-04-06
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420282
[Presentation] Microwave-Induced Rapid Heating Used to Crystallize Thin Silicon Films2015
- Author(s)
  S. Kimura, K. Ohta, T. Nakamura, M. Hasumi, A. Suzuki, M. Ushijima, T. Sameshima
- Organizer
  第76回応用物理学会学術講演会
- Place of Presentation
  名古屋国際会議場(愛知県名古屋市)
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25420282
[Presentation] Heat treatment in 110oC liquid water used for Passivating silicon surfaces2015
- Author(s)
  T. Nakamura, T. Sameshima, M. Hasumi, T. Mizuno
- Organizer
  Active Matrix Flat Panel Displays
- Place of Presentation
  龍谷大学アバンティ響都ホール(京都府京都市)
- Year and Date
  2015-07-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420282
[Presentation] n+/p+-Single Doping Effects on Impurity Band Structure Modulation2014
- Author(s)
  T. Mizuno, Y. Nakahara, Y. Nagamine, Y. Suzuki, Y. Nagata, T. Aoki, and T. Sameshima
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  Tsukuba International Congress Center
- Year and Date
  2014-09-10
- Data Source
  KAKENHI-PROJECT-24560422
[Presentation] 数nm-COMOS素子用二次元Si層の検討（Ⅸ）：量子閉じ込め効果の結晶方位依存性へのドーパントの影響2014
- Author(s)
  長嶺由騎,　鈴木佑弥，青木孝，鮫島俊之，水野智久
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-18
- Data Source
  KAKENHI-PROJECT-24560422
[Presentation] Crystallization of Amorphous Silicon Thin Films by Microwave Heating2014
- Author(s)
  中村友彦, 吉冨真也, 蓮見真彦, 鮫島俊之
- Organizer
  応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Year and Date
  2014-03-19
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] Activation of Silicon Implanted with Phosphorus Atoms by Microwave Heating2013
- Author(s)
  S. Yoshidomi, C. Akiyama, J. Furukawa, M. Hsumi, T. Ishii, T. Sameshima, Y. Inouchi, and M. Naito
- Organizer
  Active-Matrix Flatpanel Displays and Devices
- Place of Presentation
  龍谷大学アバンティ響都ホール
- Data Source
  KAKENHI-PROJECT-25420282
[Presentation] Passivation of Silicon Surface by Laser Rapid Heating2013
- Author(s)
  T. Sameshima, H. Abe, M. Hasumi, T. Mizuno, and N. Sano
- Organizer
  レーザー先端材料加工国際会議
- Place of Presentation
  朱鷺メッセ新潟コンベンションセンター
- Data Source
  KAKENHI-PROJECT-25420282
[Presentation] Multi-Connected Solar Cells Using Band-Gap Induced Cascaded Light Absorption2013
- Author(s)
  T. Sameshima, S. Yoshidomi, and M. Hasumi
- Organizer
  JSAP-MRS Joint Symposia
- Place of Presentation
  Doshisha Univ
- Year and Date
  2013-09-16
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] Passivation of Silicon Surface by Laser Rapid Heating2013
- Author(s)
  T. Sameshima
- Organizer
  Laser Precision Microfabrication
- Place of Presentation
  朱鷺メッセ新潟コンベンションセンター(新潟)
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] Activation of Silicon Implanted with Phosphorus Atoms by Microwave Heating2013
- Author(s)
  S. Yoshidomi, C. Akiyama, J. Furukawa, M. Hasumi, T. Ishii, T. Sameshima, Y. Inouchi, and M. Nait
- Organizer
  International Workshop on Active-Matrix Flatpanel Displays and Devices
- Place of Presentation
  Ryukoku Univ
- Year and Date
  2013-07-04
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] MOS構造における結晶シリコン表面の少数キャリア再結合2013
- Author(s)
  古川潤, 吉冨真也, 蓮見真彦, 鮫島俊之
- Organizer
  応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2013-03-28
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] Passivation of Silicon Surface by Laser Rapid Heating2013
- Author(s)
  T. Sameshima
- Organizer
  Laser Precision Microfabrication
- Place of Presentation
  Niigata, 朱鷺メッセ新潟コンベンションセンター
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] Microwave Annealing of Phosphorus Implanted ptype Silicon2013
- Author(s)
  M. Hasumi , S. Yoshidomi and T. Sameshima
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-25420282
[Presentation] Annihilation of Photo-Induced Minority Carrier Caused by Ion Implantation and Rapid Thermal Annealing2013
- Author(s)
  T. Sameshima and S. Shibata
- Organizer
  Active-Matrix Flatpanel Displays and Devices
- Place of Presentation
  龍谷大学アバンティ響都ホール
- Data Source
  KAKENHI-PROJECT-25420282
[Presentation] Minority Carrier Annihilation at Crystalline Silicon Surface in MOS Structure2013
- Author(s)
  J. Furukawa, S. Yoshidomi, M. Hasumi, and T. Sameshima
- Organizer
  International Workshop on Active-Matrix Flatpanel Displays and Devices
- Place of Presentation
  Ryukoku Univ
- Year and Date
  2013-07-04
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] Silicon Surface oxidation and Passivation by Remote Induction-Coupled Oxygen Plasma2013
- Author(s)
  鮫島俊之，蓮見真彦，吉冨真也，中村友彦，滋野聖
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス
- Data Source
  KAKENHI-PROJECT-25420282
[Presentation] Activation of Silicon Implanted with Dopant Atoms by Microwave Heating2013
- Author(s)
  T. Sameshima, T. Nakamura, S. Yoshidomi, M. Hasumi, T. Ishii, Y. Inouchi, M. Naito and T. Mizuno
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  Hilton Fukuoka Sea Hawk
- Year and Date
  2013-09-26
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] Minority Carrier Annihilation at Crystalline Silicon Surface in MOS Structure2013
- Author(s)
  J. Furukawa, S. Yoshidomi, M. Hasumi, and T. Sameshima
- Organizer
  Active-Matrix Flatpanel Displays and Devices
- Place of Presentation
  龍谷大学アバンティ響都ホール
- Data Source
  KAKENHI-PROJECT-25420282
[Presentation] Silicon Surface Oxidation and Passivation by Remote Induction-Coupled Oxygen Plasma2013
- Author(s)
  鮫島俊之, 蓮見真彦, 吉冨真也, 中村友彦, 滋野聖
- Organizer
  応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学
- Year and Date
  2013-09-17
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] Microwave Annealing of Phosphorus Implanted p-type Silicon2013
- Author(s)
  M. Hasumi, S. Yoshidomi, and T. Sameshima
- Organizer
  JSAP-MRS Joint Symposia
- Place of Presentation
  Doshisha Univ
- Year and Date
  2013-09-16
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] Activation of Silicon Implanted with Dopant Atoms by Microwave Heating2013
- Author(s)
  T. Sameshima, T. Nakamura, S. Yoshidomi, M. Hasumi, T. Ishii, Y. Inouchi, M. Naito and T. Mizuno
- Organizer
  Solid State Devices and Materials 2013
- Place of Presentation
  ヒルトン福岡シーホーク
- Data Source
  KAKENHI-PROJECT-25420282
[Presentation] Increase in Minority Carrier Lifetime Measured by Microwave Irradiation Method2012
- Author(s)
  T. Sameshima, K. Betsuin, T. Nagao, M. Hasumi
- Organizer
  THE 19TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES
- Place of Presentation
  Ryukoku University
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] シリコン表面における光誘起少数キャリヤ再結合消滅挙動2012
- Author(s)
  古川　潤，滝口裕太，永尾友一，蓮見真彦，鮫島俊之
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] 多波長光照射によるマイクロ波フリーキャリヤ吸収を用いた半導体少数キャリヤ消滅特性の調査2012
- Author(s)
  滝口裕太，永尾友一，蓮見真彦，鮫島俊之
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] リモート酸素プラズマ処理と高圧水蒸気熱処理によるシリコン表面パッシベーション2012
- Author(s)
  永冨佳将, 蓮見真彦, 鮫島俊之
- Organizer
  応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] 多波長光照射によるマイクロ波フリーキャリヤ吸収を用いた半導体少数キャリヤ消滅特性の調査2012
- Author(s)
  滝口裕太, 永尾友一, 蓮見真彦, 鮫島俊之
- Organizer
  応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] Decrease in Minority Carrier Lifetime of Crystalline Silicon Caused by Rapid Heating2012
- Author(s)
  T. Sameshima
- Organizer
  Materials Research Society
- Place of Presentation
  San Francisco, USA, モスコーニウエストコンベンションセンター
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] Increase in Minority Carrier Lifetime Measured by Microwave Irradiation Method2012
- Author(s)
  T. Sameshima
- Organizer
  Active Matrix Flat Panel Displays
- Place of Presentation
  龍谷大学アバンティ響都ホール(京都市)
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] Increase in Minority Carrier Lifetime Measured by Microwave Irradiation Method2012
- Author(s)
  T. Sameshima, K. Betsuin, T. Nagao, and M. Hasumi
- Organizer
  International Workshop on Active-Matrix Flatpanel Displays and Devices
- Place of Presentation
  Ryukoku Univ
- Year and Date
  2012-07-04
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] Increase in Minority Carrier Lifetime Measured by Microwave Irradiation Method2012
- Author(s)
  T. Sameshima
- Organizer
  Active Matrix Flat Panel Displays
- Place of Presentation
  Kyoto, 龍谷大学アバンティ響都ホール
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] Decrease in Minority Carrier Lifetime of Crystalline Silicon Caused by Rapid Heating2012
- Author(s)
  T. Sameshima
- Organizer
  Materials Research Society
- Place of Presentation
  San Francisco, モスコーニウエストコンベンションセンター(USA)
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] リモート酸素プラズマ処理と高圧水蒸気熱処理によるシリコン表面パッシベーション2012
- Author(s)
  永冨佳将，蓮見真彦，鮫島俊之
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] Minority Carrier Lifetime Measurements by Multiple Wavelength Light Induced Carrier Microwave Absorption Method2012
- Author(s)
  T. Sameshima, Y. Takiguchi, T. Nagao, and M. Hasumi
- Organizer
  International Workshop on Active-Matrix Flatpanel Displays and Devices
- Place of Presentation
  Ryukoku Univ
- Year and Date
  2012-07-04
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] Minority Carrier Lifetime Measurements by Multiple Wavelength Light Induced Carrier Microwave Absorption Method2012
- Author(s)
  T. Sameshima, Y. Takiguchi, T. Ngao, M. Hasumi
- Organizer
  THE 19TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES
- Place of Presentation
  Ryukoku University
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] Minority Carrier Lifetime Measurements by Multiple Wavelength Light Induced Carrier Microwave Absorption Method2012
- Author(s)
  T. Sameshima
- Organizer
  Active Matrix Flat Panel Displays
- Place of Presentation
  龍谷大学アバンティ響都ホール(京都市)
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] Minority Carrier Lifetime Measurements by Multiple Wavelength Light Induced Carrier Microwave Absorption Method2012
- Author(s)
  T. Sameshima
- Organizer
  Active Matrix Flat Panel Displays
- Place of Presentation
  Kyoto, 龍谷大学アバンティ響都ホール
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] Heat Treatment of Amorphous Silicon p-i-n Solar Cells with High-Pressure H2O Vapor2011
- Author(s)
  M. Hasumi, J. Takenezawa, T. Sameshima, T. Koida, T. Kaneko, M. Karasawa, and M. Kondo
- Organizer
  International Conference on Amorphous and Nanocrystalline Semiconductors
- Place of Presentation
  Nara Prefectural New Public Hall
- Year and Date
  2011-08-23
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] Surface Passivation of Crystalline Silicon by Micro Crystalline Silicon Deposition Followed by High-Pressure H2O Vapor Heat Treatment2011
- Author(s)
  T.Nagao, T.Sameshima, Y.Andoh, A Shuku, E.Takahashi
- Organizer
  8th Thin Film Materials & Devices Meeting
- Place of Presentation
  龍谷大学アバンティ響都ホール(京都市)
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] Surface Passivation of Crystalline Silicon by Micro Crystalline Silicon Deposition Followed by High-Pressure H_2O Vapor Heat Treatment2011
- Author(s)
  T. Nagao, T. Sameshima, Y. Andoh, A. Shuku and E. Takahashi
- Organizer
  8_th Thin Film Materials & Devices Meeting
- Place of Presentation
  龍谷大学アバンティ響都ホール(京都市)
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] High-Pressure H2O Vapor Heat Treatment Used to Improve Polycrystalline Silicon Soar Cell Characteristics2011
- Author(s)
  J. Takenezawa, M. Hasumi, and T. Sameshima
- Organizer
  International Workshop on Active-Matrix Flatpanel Displays and Devices
- Place of Presentation
  Ryukoku Univ
- Year and Date
  2011-07-12
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] Laser Induced Formation of Buried Void Layer in Silicon2011
- Author(s)
  Y. Kanda, T. Sameshima, M. Hasumi, J. Tatemichi, Y. Inouchi, and M. Naito
- Organizer
  The 12_th International Symposium on Laser Precision Microfabrication
- Place of Presentation
  かがわ国際会議場・サンポート高松(高松市)
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] High-Pressure H_2O Vapor Heat Treatment Used to Improve Polycrystalline Solar Cell Characteristics2011
- Author(s)
  J. Takenezawa, M. Hasumi, and T. Sameshima
- Organizer
  The Eighteenth International Workshop on Active-Matrix Flatpanel Displays and Devices
- Place of Presentation
  龍谷大学アバンティ響都ホール(京都市)
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] Laser Induced Formation of Buried Void Layer in Silicon2011
- Author(s)
  Y.Kanda, T.Sameshima, M.Hasumi, J.Tatemichi, Y.Inouchi
- Organizer
  The 12th International Symposium on Laser Precision Microfabrication
- Place of Presentation
  かがわ国際会議場・サンポート高松(高松市)
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] Change in Minority Carrier Lifetime Caused by Rapid Laser Heating2011
- Author(s)
  K. Betsuin, Y. Kanda, W. Kato, S.Yoshidomi, M. Hasumi T. Sameshima, N. Sano, and T. Mizuno
- Organizer
  The Eighteenth International Workshop on Active-Matrix Flatpanel Displays and Devices
- Place of Presentation
  龍谷大学アバンティ響都ホール(京都市)
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] シリコンの少数キャリヤライフタイムの種々の外部刺激による変化2011
- Author(s)
  鮫島俊之、別院公一、蓮見真彦
- Organizer
  第８回薄膜材料デバイス研究会
- Place of Presentation
  龍谷大学
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] Surface Passivation of Crystalline Silicon by Amorphous Silicon Deposition Followed by High-Pressure H_2O Vapor Heat Treatment2011
- Author(s)
  T. Nagao, M. Hasumi, T. Sameshima, and Y. Andoh
- Organizer
  The Eighteenth International Workshop on Active-Matrix Flatpanel Displays and Devices
- Place of Presentation
  龍谷大学アバンティ響都ホール(京都市)
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] Oxygen Plasma Followed by High-Pressure H_2O Vapor Heat Treatment Used for Passivation of Silicon Surfaces2010
- Author(s)
  S. Yoshidomi, M. Hasumi and T. Sameshima
- Organizer
  Proc in 7^<th> Thin Film Materials & Devices Meeting
- Place of Presentation
  百年会館(奈良)
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] Polycrystalline Silicon Thin Film Transistors2010
- Author(s)
  Toshiyuki Sameshima
- Organizer
  218^<th> Electrochemical Society Meeting
- Place of Presentation
  Riviera Hotel, Las Vegas (USA) 招待講演
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] HIGH PRESSURE H_2O VAPOR HEAT TREATMENT FOR IMPROVEMENT IN PASSIVATION LAYERS OF CRYSTALLINE SILICON SOLAR CELLS2010
- Author(s)
  M. Hasumi, J. Takenezawa, T. Nagao, Y. Kanda and T. Sameshima
- Organizer
  RENEWABLE ENERGY 2010
- Place of Presentation
  パシフィコ横浜(神奈川)
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] Minority Carrier Lifetime Measurement by Photo-Induced Carrier Microwave Absorption Method2010
- Author(s)
  T. Nagao, S. Yoshidomi, M. Hasumi, T. Sameshima and T. Mizuno
- Organizer
  Proc in 7^<th> Thin Film Materials & Devices Meeting
- Place of Presentation
  百年会館(奈良)
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] Stacked Solar Cells using Transparent and Conductive Adhesive2010
- Author(s)
  J. Takenezawa, M. Hasumi, T. Sameshima, T. Koida, T. Kaneko, M. Karasawa and M. Kondo
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  東京大学本郷キャンパス(東京)
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] Characterization of Plasma Irradiated Properties by Photo Induced Carrier Microwave Absorption Method2010
- Author(s)
  M. Hasumi, J. Takenezawa, T. Nagao and T. Sameshima
- Organizer
  2010 The Seventeenth International Workshop on Active Matrix Flat Panel Displays
- Place of Presentation
  東京工業大学ディジタル多目的ホール(東京)
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] Stacked Solar Cells using Transparent and Conductive Adhesive2010
- Author(s)
  J.Takenezawa, M.Hasumi, T.Sameshima, T.Koida, T.Kaneko, M.Karasawa, M.Kondo
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  東京大学本郷キャンバス(東京)
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] Minority Carrier Lifetime Measurements by Microwave Photo-Induced Carrier Absorption Method2010
- Author(s)
  T.Nagao, J.Takenezawa, M.Shimokawa, M.Hasumi, T.Sameshima
- Organizer
  2010 The Seventeenth International Workshop on Active Matrix Flat Panel Displays
- Place of Presentation
  東京工業大学ディジタル多目的ホール(東京)
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] Source Heterojunction with Relaxed/Strained-Layers for Quasi-Ballistic CMOS Transistors2010
- Author(s)
  T.Mizuno, M.Hasegawa, T.Sameshima
- Organizer
  ISTESNE
- Place of Presentation
  Tokyo
- Year and Date
  2010-06-04
- Data Source
  KAKENHI-PROJECT-21560371
[Presentation] Crystalline Silicon Solar Cells Used with Al and Au Metals2010
- Author(s)
  T. Sameshima, K. Kogure and M. Hasumi
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  東京大学本郷キャンパス(東京)
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] Crystalline Silicon Solar Cells With Two Different Metals2010
- Author(s)
  T. Sameshima, K. Kogure, and M. Hasumi
- Organizer
  Proc in 7_th Thin Film Materials & Devices Meeting
- Place of Presentation
  百年会館(奈良)
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] 巣一半導体を用いた新ソースヘテロ構造の検討(II):CMOS川緩和/歪半導体構造2010
- Author(s)
  水野智久, 長谷川光央, 鮫島俊之
- Organizer
  応用物理学会
- Place of Presentation
  東海大学
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-20035014
[Presentation] HIGH PRESSURE H2O VAPOR HEAT TREATMENT FOR IMPROVEMENT IN PASSIVATION LAYERS OF CRYSTALLINE SILICON SOLAR CELLS2010
- Author(s)
  Masahiko Hasumi, Jun Takenezawa, Tomokazu Nagao, Yasushi Kanda, Toshiyuki Sameshima
- Organizer
  RENEWABLE ENERGY 2010
- Place of Presentation
  パシフィコ横浜(神奈川)
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] 単一半導体を用いた新ソースヘテロ構造の検討(II):CMOS用緩和/歪半導体構造2010
- Author(s)
  水野智久, 長谷川光央, 鮫島俊之
- Organizer
  応用物理学会
- Place of Presentation
  東海大学
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21560371
[Presentation] Oxygen Plasma Followed by High-Pressure H2O Vapor Heat Treatment Used for Passivation of Silicon Surfaces2010
- Author(s)
  S.Yoshidomi, M.Hasumi, T.Sameshima
- Organizer
  Proc in 7^<th> Thin Film Materials & Devices Meeting
- Place of Presentation
  百年会館(奈良)
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] Polycrystalline Silicon Thin Film Transistors2010
- Author(s)
  T. Sameshima
- Organizer
  218^<th> Electrochemical Society Meeting
- Place of Presentation
  Riviera Hotel, Las Vegas (USA)
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] Crystalline Silicon Solar Cells With Two Different Metals2010
- Author(s)
  Toshiyuki Sameshima, Kazuya Kogure, Masahiko Hasumi
- Organizer
  Proc in 7^<th> Thin Film Materials & Devices Meeting
- Place of Presentation
  百年会館(奈良)
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors using Ion Implantation Induced Relaxation Technique of Strained-Substrates2009
- Author(s)
  T.Mizuno, N.Mizoguchi, K.Tanimoto, T.Yamauchi, T.Tezuka, T.Sameshima
- Organizer
  SSDM
- Place of Presentation
  Sendai
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-20035014
[Presentation] 単一半導体を用いた新ソースヘテロ構造の検討:(I)緩和Si/歪Siヘテロ構造2009
- Author(s)
  水野智久, 溝口直樹, 谷本光太郎, 山内知明, 鮫島俊之
- Organizer
  応用物理学会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21560371
[Presentation] 単一半導体を用いた新ソースヘテロ構造の検討:(I)緩和Si/歪Siヘテロ構造2009
- Author(s)
  水野智久, 溝口直樹, 谷本光太郎, 山内知明, 鮫島俊之
- Organizer
  応用物理学会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-20035014
[Presentation] Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors using Ion Implantation Induced Relaxation Technique of Strained-Substrates2009
- Author(s)
  T.Mizuno, N.Mizoguchi, K.Tanimoto, T.Yamauchi, T.Tezuka, T.Sameshima
- Organizer
  SSDM
- Place of Presentation
  Sendai
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-21560371
[Presentation] 数nm-CMOS 素子用二次元Si 層の検討（VI）：閉じ込め効果の異方性のSi 膜厚依
- Author(s)
  永田祐介，中原雄太，青木孝，鮫島俊之，水野智久
- Organizer
  応用物理学会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-24560422
[Presentation] Activation of Silicon Implanted with Phosphorus Atoms by Microwave Heating
- Author(s)
  S. Yoshidomi, C. Akiyama, J.Furukawa, M. Hsumi, T. Ishii, T. Sameshima, Y. Inouchi, M. Naito
- Organizer
  THE TWENTIETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES
- Place of Presentation
  Ryukoku University Avanti Kyoto Hall, Kyoto
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] Physical Limitation of pn Junction in Two Dimensional Si Layers for Future CMOS
- Author(s)
  T. Mizuno, Y. Nakahara, Y. Nagata, Y. Suzuki, Y. Kubodera, Y. Shimizu, T. Aoki, and T. Sameshima
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  福岡ヒルトンホテル
- Data Source
  KAKENHI-PROJECT-24560422
[Presentation] Anisotropic Phonon-Confinement-Effects/Band-Structure-Modulation of Two-Dimensional Si Layers Fabricated on Silicon-on-Quartz Substrates
- Author(s)
  T. Mizuno, Y. Nagata, Y. Suzuki, Y. Nakahara, T. Tanaka, T. Aoki and T. Sameshima
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  福岡ヒルトンホテル
- Data Source
  KAKENHI-PROJECT-24560422
[Presentation] Passivation of silicon surface by laser rapid heating
- Author(s)
  Toshiyuki Sameshima, Hiroshi Abe, Masahiko Hasumi, Tomohisa Mizuno, Naoki Sano
- Organizer
  LPM2013
- Place of Presentation
  Toki Messe, Niigata
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] 数nm-CMOS素子用2次元Si層の検討（I）：フォノン閉じ込め効果の面方位/歪み依存性
- Author(s)
  中原雄太，永田祐介，青木孝，鮫島俊之，水野智久
- Organizer
  応用物理学会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24560422
[Presentation] MOS 構造における結晶シリコン表面の少数キャリヤ再結合
- Author(s)
  古川潤，吉冨真也，蓮見真彦，鮫島俊之
- Organizer
  第 60 回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] 数nm-CMOS素子用二次元Si層の検討(III):量子的閉じ込め効果の異方性
- Author(s)
  永田祐介，中原雄太，青木孝，鮫島俊之，水野智久
- Organizer
  応用物理学会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-24560422
[Presentation] Minority Carrier Annihilation at Crystalline SiliconSurface in MOS Structure
- Author(s)
  J. Furukawa, S. Yoshidomi, M. Hasumi, T. Sameshima
- Organizer
  THE TWENTIETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES
- Place of Presentation
  Ryukoku University Avanti Kyoto Hall, Kyoto
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] Activation of Silicon Implanted with Dopant Atoms by Microwave Heating
- Author(s)
  中村友彦，滋野聖，吉冨真也，蓮見真彦，石井寿子，鮫島俊之，井内裕，内藤勝男，水野智久
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] Passivation of Silicon Surfaces by Oxygen Radical followed by High Pressure H2O Vapor
- Author(s)
  Toshiyuki Sameshima, Shinya Yoshidomi, Tomohiko Nakamura, Satoshi Shigeno, and Masahiko Hasumi
- Organizer
  2014 Workshop on Active Matrix Flat Panel Displays
- Place of Presentation
  京都府京都市、龍谷大学アバンティ響都ホール
- Year and Date
  2014-07-02 – 2014-07-04
- Data Source
  KAKENHI-PROJECT-25420282
[Presentation] Microwave Annealing of Phosphorus Implanted p-type Silicon
- Author(s)
  Masahiko Hasumi, Shinya Yoshidomi and Toshiyuki Sameshima
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  Doshisha University, Kyoto
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] 酸素プラズマ処理によるシリコン表面パッシベーション
- Author(s)
  野手智仁，吉冨真也，古川潤，阿部博史，蓮見真彦，鮫島俊之
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] 数nm-CMOS 素子用二次元Si 層の検討（IV）：光学特性の変調効果
- Author(s)
  鈴木佑弥，中原雄太，永田祐介，青木孝，鮫島俊之，水野智久
- Organizer
  応用物理学会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-24560422
[Presentation] 数nm-CMOS素子用2次元Si層の検討（II）：バンド構造の変調効果
- Author(s)
  永田祐介，中原雄太，青木孝，鮫島俊之，水野智久
- Organizer
  応用物理学会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24560422
[Presentation] Multi-Connected Solar Cells Using Band-Gap Induced Cascaded Light Absorption
- Author(s)
  TOSHIYUKI SAMESHIMA, SHINYA YOSHIDOMI and MASAHIKO HASUMI
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  Doshisha University, Kyoto
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] 数nm-CMOS素子用Si単原子層の検討（II）：フォトルミネッセンス特性
- Author(s)
  水野智久，戸部圭亮，丸山洋一，鮫島俊之
- Organizer
  応用物理学会
- Place of Presentation
  愛媛大学
- Data Source
  KAKENHI-PROJECT-24560422
[Presentation] Oxygen Radical Treatment used for Fabricating Metal-Insulator-Semiconductor Solar Cells
- Author(s)
  滋野聖，吉冨真也，蓮見真彦，鮫島俊之
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] 数nm-CMOS素子用二次元Si層の検討(V):高濃度不純物原子のバンド変調/フォノン閉じ込め効果への影響
- Author(s)
  中原雄太，永田祐介，鈴木佑弥，青木孝，鮫島俊之，水野智久
- Organizer
  応用物理学会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-24560422
[Presentation] Passivation of Silicon Surfaces by Heat Treatment in Boiled Water and its Application of
- Author(s)
  Tomohiko Nakamura, Shinya Yoshidomi, Masahiko Hasumi, and Toshiyuki Sameshima
- Organizer
  2014 Workshop on Active Matrix Flat Panel Displays
- Place of Presentation
  京都府京都市、龍谷大学アバンティ響都ホール
- Year and Date
  2014-07-02 – 2014-07-04
- Data Source
  KAKENHI-PROJECT-25420282
[Presentation] Crystallization of Amorphous Silicon Thin Films by Microwave Heating
- Author(s)
  中村友彦，吉冨真也，蓮見真彦，鮫島俊之
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Data Source
  KAKENHI-PROJECT-23560360
[Presentation] Surface-Orientation/Strain Dependence of Quantum Confinement Effects　in Si Monolayers for Future CMOS Devices
- Author(s)
  T.Mizuno, K.Higa, Y.Nakajima, D.Urata, Y.Abe, H.Akamatsu,Y.Nagata, Y.Nakahara, Y.Sato, J.Takehi and T.Sameshima
- Organizer
  国際固体素子材料学会
- Place of Presentation
  京都国際会館
- Data Source
  KAKENHI-PROJECT-24560422
[Presentation] 数nm-CMOS素子用二次元Si層の検討(VII):量子的閉じ込め効果のドナー/アクセプター濃度依存性
- Author(s)
  中原雄太，永田祐介，鈴木佑弥，青木孝，鮫島俊之，水野智久
- Organizer
  応用物理学会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-24560422
[Presentation] Silicon Surface oxidation and Passivation by Remote Induction-Coupled Oxygen Plasma
- Author(s)
  鮫島俊之，蓮見真彦，吉冨真也，中村友彦，滋野聖
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス
- Data Source
  KAKENHI-PROJECT-23560360

1. MIZUNO Tomohisa (60386810)

# of Collaborated Projects: 8 results

# of Collaborated Products: 76 results
2. HASUMI Masahiko (60261153)

# of Collaborated Projects: 3 results

# of Collaborated Products: 85 results
3. KAMIYA Hidehiro (20183783)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. WULED Lenggoro (10304403)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. IHARA Manabu (90270884)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. FUSHIMI Chihiro (50451886)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. IIJIMA Motoyuki (70513745)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. SAKAI Mikio (00391342)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. INAZAWA Susumu (30466776)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Sameshima Toshiyuki 鮫島 俊之

Samesima Toshiyuki 鮫島 俊之

SAMESHIMA Toshiyuki 鮫島 俊之

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液体プロセスによる新規低温半導体表面及びカットエッジパッシベーションPrincipal Investigator

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Research on behavior of the recombination defect of minority carriers depending on the internal built in potential in PN junctionsPrincipal Investigator

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Experimental study on two-dimensional silicon-cabide using hot-carbon-ion implantation technique

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study on high efficiency solar cell driven by metal workfunctionPrincipal Investigator

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Experimental study on two-dimensional silicon

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Application of interface structure designed functional nanoparticles for solar cell devices

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Improvement in Characteristics of Crystalline Silicon Solar Cells by High-Pressure Water Vapor Heat Treatment

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Observation of defects induced by non thermal equilibrium processes and their control used by microwave absorption of free carriersPrincipal Investigator

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Study on relaxed/strained semiconductor layer heterostructures fabricated by ion implantation induced relaxation technique of strained semiconductors

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ソースヘテロ構造を用いたバリスティック素子の基盤研究

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[Journal Article] Passivation of cut edges and surfaces of crystalline silicon by heat treatment in liquid water2023

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[Journal Article] 無電極ランプを熱源とした加熱装置によるリンイオン注入300 mm径シリコン基板の活性化2023

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[Journal Article] Passivation of cut edges of crystalline silicon by heat treatment in liquid water2023

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[Journal Article] SiC quantum dot formation in SiO2 layer using double hot-Si+/C+-ion implantation technique2020

Sameshima Toshiyuki 鮫島俊之

Samesima Toshiyuki 鮫島俊之

SAMESHIMA Toshiyuki 鮫島俊之