NAGASHIMA Ayato 長島礼人

Researcher Number	30277834
Other IDs
Affiliation (Current)	2025: 山梨大学, 大学院総合研究部, 准教授
Affiliation (based on the past Project Information) *help	2004 – 2006: 山梨大学, 教育人間科学部, 助教授 2001 – 2003: 東京工業大学, 大学院・理工学研究科, 助手 2002: 東京工業大学, 大学院・理工学研究科(物性物理学専攻), 助手
Review Section/Research Field	Principal Investigator Thin film/Surface and interfacial physical properties / 表面界面物性 Except Principal Investigator Science and Engineering / Applied materials science/Crystal engineering
Keywords	Principal Investigator 表面・界面物性 / 磁気輸送特性 / ナノコンタクト / 走査プローブ顕微鏡 / スピンエレクトロニクス / 磁気記録 / 磁性探針 / 電流注入 / 磁化制御 / 走査トンネル顕微鏡 / 磁性 / ナノ構造 … More Except Principal Investigator … More BEEM / GaMnAs / MnAs / GaAs(001)c(4x4) / 半導体 / BEES / scanning tunneling microscope / spin-dependent transport properties / tunneling magnetoresistance / magnetic semiconductors / semiconductor-magnetic materials nano-structures / スピントロニクス / III-V族希薄磁性半導体 / 磁性体ナノドット / スピン偏極電子 / スピン依存電気伝導 / GaAs(100) c(4x4) / 磁化誘起第2次高調波発生 / STM / スピン依存トンネル現象 / TMR構造 / 走査トンネル顕微鏡 / スピン依存輸送現象 / トンネル磁気抵抗 / 磁性半導体 / 磁性体ナノ構造 / magnetic-material heterostructures / Semiconductor / Ballistic electron emission microscopy / GaAs / Fe / LEED-IV解析 / GaAs(100) c(4x4)構造 / 半導体接合 / 強磁性金属 / 磁性体ヘテロ構造 / 弾道電子放出顕微鏡 Less

超高密度磁気記録を室温・大気環境で実現するための新規な記録方式の開発Principal Investigator
- Principal Investigator
  
  長島礼人
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  University of Yamanashi
磁性ナノ構造の形成と新機能創出Principal Investigator
- Principal Investigator
  
  長島礼人
- Project Period (FY)
  2002 – 2003
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  表面界面物性
- Research Institution
  Tokyo Institute of Technology
Extremely high-density doping of magnetic impurity in magnetic semiconductors and surface nano-structure preparation by controlling fundamental surface process during MBE growth
- Principal Investigator
  
  YOSHINO Junji
- Project Period (FY)
  2002 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Tokyo Institute of technology
Study on magneto-transport properties of semiconductor/magnetic-material heterostructures by ballistic electron emission microscopy
- Principal Investigator
  
  YOSHINO Junji
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo Institute of Technology

All 2004 2002

All Journal Article

[Journal Article] Surface structure of GaAs(001)-c(4x4) studied by LEED intensity analysis2004
- Author(s)
  A.Nagashima, A.Nishimura, T.Kawakami, J.Yoshino
- Journal Title
  
  Surface Science 564
  
  Pages: 218-224
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450009
[Journal Article] Surface structure of GaAs(001)-c(4x4) studied by LEED intensity analysis2004
- Author(s)
  A.Nagashima
- Journal Title
  
  Surface Science 564
  
  Pages: 218-224
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450009
[Journal Article] Surface structure of GaAs(001)-c(4x4) studied by LEED intensity analysis2004
- Author(s)
  A.Nagashima
- Journal Title
  
  Surface Science 564
  
  Pages: 218-224
- Data Source
  KAKENHI-PROJECT-14076211
[Journal Article] Surface structure of GaAs(001)-c(4x4) studied by LEED intensity analysis2004
- Author(s)
  A.Nagashima et al.
- Journal Title
  
  Sur. Sci. 564
  
  Pages: 218-224
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14076211
[Journal Article] Formation of iron silicide nanodots on Si(111)-Ag2002
- Author(s)
  Y.Takagi, A.Nishimura, A.Nagashima, J.Yoshino
- Journal Title
  
  Surface Science 514
  
  Pages: 167-171
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450009
[Journal Article] STM and RHEED studies on low-tempertature growth of GaAs(001)2002
- Author(s)
  A.Nagashima
- Journal Title
  
  Surface Science 514
  
  Pages: 350-355
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13450009
[Journal Article] STM and RHEED studies on low-temperature growth of GaAs(001)2002
- Author(s)
  A.Nagashima, M.Tazima, A.Nishimura, Y.Takagi, J.Yoshino
- Journal Title
  
  Surface Science 514
  
  Pages: 350-355
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13450009
[Journal Article] STM and RHEED studies on low-temperature growth of GaAs(001)2002
- Author(s)
  A.Nagashima et al.
- Journal Title
  
  Surf. Sci. 514
  
  Pages: 350-355
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14076211

1. YOSHINO Junji (90158486)

# of Collaborated Projects: 2 results

# of Collaborated Products: 3 results
2. FUJIO Minami (30200083)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. OGAWA Yoshihiro (50372462)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

NAGASHIMA Ayato 長島 礼人

Research Projects

Research Products

Co-Researchers

超高密度磁気記録を室温・大気環境で実現するための新規な記録方式の開発Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

磁性ナノ構造の形成と新機能創出Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Extremely high-density doping of magnetic impurity in magnetic semiconductors and surface nano-structure preparation by controlling fundamental surface process during MBE growth

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Study on magneto-transport properties of semiconductor/magnetic-material heterostructures by ballistic electron emission microscopy

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Surface structure of GaAs(001)-c(4x4) studied by LEED intensity analysis2004

Author(s)

Journal Title

Description

Data Source

[Journal Article] Surface structure of GaAs(001)-c(4x4) studied by LEED intensity analysis2004

Author(s)

Journal Title

Description

Data Source

[Journal Article] Surface structure of GaAs(001)-c(4x4) studied by LEED intensity analysis2004

Author(s)

Journal Title

Data Source

[Journal Article] Surface structure of GaAs(001)-c(4x4) studied by LEED intensity analysis2004

Author(s)

Journal Title

Description

Data Source

[Journal Article] Formation of iron silicide nanodots on Si(111)-Ag2002

Author(s)

Journal Title

Description

Data Source

[Journal Article] STM and RHEED studies on low-tempertature growth of GaAs(001)2002

Author(s)

Journal Title

Description

Data Source

[Journal Article] STM and RHEED studies on low-temperature growth of GaAs(001)2002

Author(s)

Journal Title

Description

Data Source

[Journal Article] STM and RHEED studies on low-temperature growth of GaAs(001)2002

Author(s)

Journal Title

Description

Data Source

NAGASHIMA Ayato 長島礼人