Kanashima Takeshi 金島岳

… Alternative Names

KANASHIMA Takeshi 金島岳

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Researcher Number	30283732
Other IDs
Affiliation (Current)	2025: 近畿大学, 産業理工学部, 教授
Affiliation (based on the past Project Information) *help	2018 – 2021: 大阪大学, 基礎工学研究科, 准教授 2008 – 2011: Osaka University, 基礎工学研究科, 准教授 2009 – 2010: 大阪大学, 大学院・基礎工学研究科, 准教授 2000 – 2003: 大阪大学, 基礎工学研究科, 助手 2000 – 2002: 大阪大学, 大学院・基礎工学研究科, 助手
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related / Electronic materials/Electric materials / Electronic materials/Electric materials Except Principal Investigator 電子デバイス・機器工学 / Electronic materials/Electric materials / Science and Engineering
Keywords	Principal Investigator 分子軌道計算 / 界面 / エピタキシャル成長 / ゲルマニウム半導体 / high-k/Ge / 低温成長 / 界面準位密度 / パルスレーザ蒸着法 / エピタキシャルゲート絶縁膜 / 直接接合 … More / La2O2 / 基板欠陥 / エピタキシャル絶縁膜 / ラジカル処理 / 接触角 / 結晶転位 / 原子マッチング / La2O3 / Ge-MISFET / HCl / 作製・評価技術 / 硫化アンモニウム / 表面処理 / 表面反応 / High-k / 表面・界面物性 / Ge / 表面 / 量子化学計算 / 作成・評価技術 / 光誘起蒸発 / アブレーション / 軟X線 / 低温 / 表面酸化 / 放射光 … More Except Principal Investigator 強誘電体 / Sr_2(Ta_<1-x>,Nb_x)_2O_7(STN) / イオン化ポテンシャル / 界面特性 / 酸素アニール / 保持特性 / SrBi_2Ta_2O_9(SBT) / 不揮発性メモリ / MFIS構造 / 電子・電気材料 / Ionization potential / Interface / Memory retention / Sr_2 (Ta_<1-x>,Nb_x)_2O_7 (STN) / SrBi_2Ta_2O_g (SBT) / Non-volatile memory / MFIS structure / Ferroelectric / 誘電物性 / 磁性 / 結晶成長 / 物性実験 / 強磁性 / 強誘電性 / 磁場 / レーザアブレーション / 薄膜 / マルチフェロイック / 強磁性体 / メモリデバイス / 表面・界面物性 / 先端機能デバイス Less

High quality Ge-based transistor using epitaxially grown high-k gate insulatorsPrincipal Investigator
- Principal Investigator
  
  Kanashima Takeshi
- Project Period (FY)
  2018 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Osaka University
Preparation of Ferromagnetic and Ferroelectric Thin Films by Pulsed Laser Deposition and Their Characterization
- Principal Investigator
  
  OKUYAMA Masanori
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka University
Improvement of insulator/ Germanium interface by surface passivation for high-mobility Ge based transistor.Principal Investigator
- Principal Investigator
  
  KANASHIMA Takeshi
- Project Period (FY)
  2008 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka University
強誘電体薄膜の物性制御と次世代メモリデバイスへの応用
- Principal Investigator
  
  OKUYAMA Masanori
- Project Period (FY)
  2000 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Osaka University
放射光による低温での極薄酸化・窒化膜形成の理論的実験的解明Principal Investigator
- Principal Investigator
  
  金島岳
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka University
Improvement of ferroelectric and insulator layers in ferroelectric/insulator/semiconductor stacked gate structure
- Principal Investigator
  
  NODA Minoru
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Osaka University

All 2020 2018 2012 2011 2010 2009 2008

All Journal Article Presentation Book

[Book] Ferroelectrics Material Aspects, chapter 72011
- Author(s)
  Le Van Hai, Takeshi Kanashima, Masanori Okuyama
- Publisher
  Studies on Electrical and Retention Enhancement Properties of Metal-Ferroelectric-Insulator-Semiconductor with Radical Irradiation Treatments(電子ジャーナルも有)
- Data Source
  KAKENHI-PROJECT-21360150
[Journal Article] Passivation of Ge(100) and(111) Surfaces by Termination of Nonmetal Elements2012
- Author(s)
  D. Lee, K. Kubo, T. Kanashima and M. Okuyama
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 51
- NAID
  210000072099
- Data Source
  KAKENHI-PROJECT-20560300
[Journal Article] Preparation of BiFe_<0. 9> Co_<0. 1> O_3 Films by Pulsed Laser Deposition under Magnetic Field2011
- Author(s)
  J. M. Park, F. Gotoda, S. Nakashima, M. Sohgawa, T. Kanashima, M. Okuyama
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 50巻
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360150
[Journal Article] Improvement in the Electrical Characteristics of a Fluorinated HfO_2/ Ge Gate Stack by Using a Nitrogen Radical Treatment2011
- Author(s)
  D. Lee, H. Lee, H. Imajo, Y. Yoshioka, T. kanashima and M. Okuyama
- Journal Title
  
  J. Korean Phys. Soc
  
  Volume: 59 Pages: 2503-2508
- Data Source
  KAKENHI-PROJECT-20560300
[Journal Article] Preparation and Characterization of BiFeO_3 Thin Films on ITO Substrate by Pulsed Laser Deposition2011
- Author(s)
  J.M.Park, F.Gotoda, S.Nakashima, T.Kanashima, M.Okuyama
- Journal Title
  
  Journal of the Korea Physical Society
  
  Volume: 59 Issue: 3(1) Pages: 2537-2541
- DOI
  10.3938/jkps.59.2537
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360150
[Journal Article] Preparation of BiFeO_3 Thin Films on SrRuO_3/SrTiO_3(001) Substrate by Dual Ion Beam Sputtering Process2011
- Author(s)
  S.Nakashima, H.Fujisawa, H.Suminaga, J.M.Park, H.Nishioka, M.Kobune, T.Kanashima, M.Okuyama, M.Shimizu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 50 Issue: 9S2 Pages: 09NB01-09NB01
- DOI
  10.1143/jjap.50.09nb01
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360150, KAKENHI-PROJECT-22656075, KAKENHI-PROJECT-23760290
[Journal Article] Studies on Electrical and Retention Enhancement Properties of Metal-Ferroelectric-Insulator-Semiconductor with Radical Irradiation Treatments2011
- Author(s)
  Le Van Hai, Takeshi Kanashima, Masanori Okuyama
- Journal Title
  
  INTECH
  
  Volume: (図書にも有)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360150
[Journal Article] Mutiferroic Properties of Polycrystalline Sr-substituted BiFeO_3 Thin Films Prepared by Pulsed Laser Deposition2011
- Author(s)
  J. M. Park, F. Gotoda, S. Nakashima, T. Kanashima, M. Okuyama
- Journal Title
  
  Ferroelectrics
  
  Volume: 416巻 Pages: 119-124
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360150
[Journal Article] Preparation and Characterization of BiFeO_3 Thin Films on ITO Substrate by Pulsed Laser Deposition2011
- Author(s)
  J. M. Park, F. Gotoda, S. Nakashima, T. Kanashima, M. Okuyama
- Journal Title
  
  Journal of the Korea Physical Society
  
  Volume: 59巻 Pages: 2011-2011
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360150
[Journal Article] Improvement in the Electrical Characteristics of a Fluorinated Hf_2O/Ge Gate Stack by Using a Nitrogen Radical Treatment2011
- Author(s)
  DongHun Lee, Hyun Lee, Hideto Imajo, Yuichi Yoshioka, Takeshi kanashima, Masanori Okuyama
- Journal Title
  
  J.Korean Phys.Soc.
  
  Volume: 59 Issue: 3(1) Pages: 2503-2508
- DOI
  10.3938/jkps.59.2503
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560300
[Journal Article] Multiferroic Properties of Polycrystalline Zn-substituted BiFeO_3 Thin Films Prepared by Pulsed Laser Deposition2011
- Author(s)
  J. M. Park, F. Gotoda, S. Nakashima, T. Kanashima, M. Okuyama
- Journal Title
  
  Current Applied Physics
  
  Volume: 11巻
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360150
[Journal Article] Multiferroic Properties of Epitaxial 0.7BiFeO_3 -0.3 BaTiO_3 Solid Solution Thin Filmson La-doped SrTiO_3 (001) Substrate2011
- Author(s)
  J.M.Park, T.Kanashima, M.Okuyam
- Journal Title
  
  Journal of the Korean Physical Society
  
  Volume: 58 Pages: 674-677
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360150
[Journal Article] Characterization of Epitaxial BiFeO_3 Thin Films Prepared by Ion Beam Sputtering2011
- Author(s)
  S.Nakashima, Y.Tsujita, S.Kayahara, H.Fujisawa, J.M.Park, T.Kanashima, M.Okuyama, M.Shimizu
- Journal Title
  
  Current Applied Physics
  
  Volume: 11 Issue: 3 Pages: 2556-2559
- DOI
  10.1016/j.cap.2010.11.066
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360150, KAKENHI-PROJECT-22656075
[Journal Article] Improvement in the Property of Field Effect Transistor Having the HfO_2/ Ge Structure Chemical Vapor Deposition with Fluorine Treatment Fabricated by Photoassisted Metal Organic2011
- Author(s)
  D. Lee, H. Imajo, T. Kanashima and M. Okuyama
- Journal Title
  
  Jpn. J. Appl
  
  Volume: 50
- Data Source
  KAKENHI-PROJECT-20560300
[Journal Article] Mutiferroic Properties of Polycrystalline Sr-substituted BiFeO_3 Thin Films Prepared by Pulsed Laser Deposition2011
- Author(s)
  J.M.Park, F.Gotoda, S.Nakashima, T.Kanashima, M.Okuyama
- Journal Title
  
  Ferroelectrics
  
  Volume: 416 Issue: 1 Pages: 119-124
- DOI
  10.1080/00150193.2011.577720
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360150
[Journal Article] Multiferroic Properties of Polycrystalline Zn-substituted BiFeO_3 Thin Films Prepared by Pulsed Laser Deposition2011
- Author(s)
  J.M.Park, F.Gotoda, S.Nakashima, T.Kanashima, M.Okuyama
- Journal Title
  
  Current Applied Physics
  
  Volume: 11 Issue: 3 Pages: S270-S273
- DOI
  10.1016/j.cap.2011.03.032
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360150
[Journal Article] Preparation of BiFe_<0.9>Co_<0.1>O_3 Films by Pulsed Laser Deposition under Magnetic Field2011
- Author(s)
  J.M.Park, F.Gotoda, S.Nakashima, M.Sohgawa, T.Kanashima, M.Okuyama
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 50 Issue: 9S2 Pages: 09NB03-09NB03
- DOI
  10.1143/jjap.50.09nb03
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360150
[Journal Article] Improvement in the Property of Field Effect Transistor Having the HfO_2/Ge Structure Fabricated by Photoassisted Metal Organic Chemical Vap or Deposition with Fluorine Treatment2011
- Author(s)
  DongHun Lee, Hideto Imajo, Takeshi Kanashima, Masanori Okuyama
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 50 Issue: 4S Pages: 04DA11-04DA11
- DOI
  10.1143/jjap.50.04da11
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560300
[Journal Article] Theoretical Analysis of Fluorine-Passivated Germanium Surface for High-k/ Ge Gate Stack by Molecular Orbital Method2010
- Author(s)
  D. Lee, H. Lee, T. Kanashima and M. Okuyama
- Journal Title
  
  Appl. Surf. Sci
  
  Volume: 257 Pages: 917-920
- Data Source
  KAKENHI-PROJECT-20560300
[Journal Article] Theoretical Analysis of Fluorine-Passivated Germanium Surface for High-k/Ge Gate Stack by Molecular Orbital Method2010
- Author(s)
  D.H, Lee, H.Lee, T.Kanashima, M.Okuyama
- Journal Title
  
  Appl.Surf.Sci.
  
  Volume: 257 Pages: 917-920
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560300
[Journal Article] Leakage Current Reduction and Ferroelectric Property of BiFei_<1-x>Co_xO_3 Thin Films Prepared by Chemical Solution Deposition Using Iterative Rapid Thermal Annealing at Approximately 520℃2010
- Author(s)
  N.T.Tho, T.Kanashima, M.Okuyama
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 49
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360150
[Journal Article] Structural and ferroelectric properties of epitaxial Bi_5Ti_3FeO_<15> and natural-superlattice-structured Bi_4Ti_3O_<12>-Bi_5Ti_3FeO_<15> thin films2010
- Author(s)
  S.Nakashima, H.Fujisawa, S.Ichikawa, J.M.Park, T.Kanashima, M.Okuyama, M.Shimizu
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 108
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360150
[Journal Article] Theoretical Analysis of Fluorine-Passivated Germanium Surface for High-k/Ge Gate Stack by Molecular Orbital Method2010
- Author(s)
  D.Lee, H.Lee, T.Kanashima, M.Okuyama
- Journal Title
  
  Appl.Surf.Sci. 257
  
  Pages: 917-920
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560300
[Journal Article] Ferroelectric Properties of Bi_<1.1>Fe_<1-x>Co_xO_3 Thin Films Prepared by Chemical Solution Deposition Using Iterative Rapid Thermal Annealing in N_2 and O_22010
- Author(s)
  N.T.Tho, T.Kanashima, M.Sohgawa, D.Ricinschi, M.Noda, M.Okuyama
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 49
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360150
[Journal Article] Ferroelectric and structural properties of stress-constrained and stress-relaxed polycrystalline BiFeO_3 thin flms2009
- Author(s)
  S.Nakashima, D.Ricinschi, J.M.Park, T.Kanashima, H.Fujisawa, M.Shimizu, M.Okuyama
- Journal Title
  
  Jouranal of Applied Physics 105
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360150
[Journal Article] HfO2/Ge MIS構造のF2処理と窒素ラジカル処理による電気的特性の向上2009
- Author(s)
  今庄秀人, Hyun Lee, Dong-Hun Lee, 吉岡祐一, 金島岳, 奥山雅則
- Journal Title
  
  電子情報通信学会技術研究報告書 SDM2009
  
  Pages: 43-48
- Data Source
  KAKENHI-PROJECT-20560300
[Journal Article] Synergistic information encoding by combinatorial pulse operation of ferroelectrics2009
- Author(s)
  D.Ricinschi.D.Nicastro, T.Kanashima, M.Okuyama
- Journal Title
  
  Applied Physics Letters 95
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360150
[Journal Article] Characteristics improvement of HfO_2/ Ge gate stack structure by fluorine treatment of germanium surface2008
- Author(s)
  H. Lee, D. H. Lee, T. Kanashima and M. Okuyama
- Journal Title
  
  Appl. Surf. Sci
  
  Volume: 254 Pages: 6932-6936
- Data Source
  KAKENHI-PROJECT-20560300
[Journal Article] Fixed-Oxide-Charge Characterization by Photoreflectance Spectroscopy in HfO_2 on Ge Treated by Fluorine2008
- Author(s)
  T.Kanashima, H.Lee, Y.Mori, H.Imajo, M.Okuyama.
- Journal Title
  
  Proceedings of ECS Transactions(PRiME2008) Volume 16, Issue 10
  
  Pages: 699-705
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560300
[Journal Article] Characteristics improvement of HfO_2/Ge gate stack structure by fluorinetreatment of germanium surface2008
- Author(s)
  H. Lee, D. H. Lee, T. Kanashima, M. Okuyama
- Journal Title
  
  Applied Surface Sciencet 254
  
  Pages: 6932-6936
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560300
[Journal Article] Preparation and Characterization of Hafnium Silicate Dielectric Layers by Photo-Assisted MOCVD Using Mixed Precursor of Hf(O-t-C_4H_9)_4 and Si(O-t-C_4H_9)_42008
- Author(s)
  H.Lee, T.Kanashima, M.Okuyama
- Journal Title
  
  Integrated Ferroelectrics 97
  
  Pages: 103-110
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560300
[Journal Article] Preparation and Characterization of Hafnium Silicate Dielectric Layers by Photo-Assisted MOCVD Using Mixed Precursor of Hf(O-t-C_4H_9)_4 and Si(O-t-C_4H_9)_42008
- Author(s)
  H. Lee, T. Kanashima and M. Okuyama
- Journal Title
  
  Integrated Ferroelectrics
  
  Volume: 97 Pages: 103-110
- Data Source
  KAKENHI-PROJECT-20560300
[Journal Article] Preparation and Characterization of Hafnium Silicate Dielectric Layers by Photo-Assisted MOCVD Using Mixed Precursor of Hf(O-t-C_4H_9)_4 and Si(O-t-C_4H_9)_42008
- Author(s)
  H. Lee, T. Kanashima, M. Okuyama
- Journal Title
  
  Integrated Ferroelectrics 97
  
  Pages: 103-110
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560300
[Presentation] Ge基板のヨウ素溶液処理による表面エッチング2020
- Author(s)
  森悠, 濱地威明, 阿保智, 酒井朗, 金島岳
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04235
[Presentation] Ge基板表面処理における接触角とMIS電気特性2020
- Author(s)
  高山祐太郎、森悠、金島岳
- Organizer
  応用物理学会春期学術講演会
- Data Source
  KAKENHI-PROJECT-18K04235
[Presentation] 溶液処理による結晶Lu-Doped La2O3/Ge(111) MIS界面特性改善2018
- Author(s)
  古荘仁久, 高山恭一, 山本圭介, 中島寛, 野平博司, 金島岳
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04235
[Presentation] Improvement of Interface Properties of Ge-MISFET with Crystalline La2O3 High-k/Ge(111) Gate Stacks by Wet Treatment2018
- Author(s)
  T. Kanashima, H. Furusho, K. Takayama, H. Nohira, K. Yamamoto, H. Nakashima
- Organizer
  International Conference on Solid State Devices and Materials (SSDM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04235
[Presentation] 磁場中PLD法によるエピタキシャルBiFeO_3薄膜の作製と評価2012
- Author(s)
  朴正敏、中嶋誠二、寒川雅之、金島岳、奥山雅則
- Organizer
  応用物理学会
- Place of Presentation
  東京,早稲田大学
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] 磁場中PLD法によるエピタキシャルBiFeO_3薄膜の作製と評価2012
- Author(s)
  朴正敏、中嶋誠二、寒川雅之、金島岳、奥山雅則
- Organizer
  応用物理学会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] RFプレーナマグネトロンスパッタ法を用いたエピタキシャルBiFeO_3薄膜の作製2012
- Author(s)
  高田祐介、中川文、中嶋誠二、藤沢浩訓、小舟正文、朴正敏、金島岳、奥山雅則、清水勝
- Organizer
  応用物理学会
- Place of Presentation
  東京,早稲田大学
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] デュアルイオンビームスパッタ法を用いたBiFeO_3薄膜の作製2011
- Author(s)
  中嶋誠二, 辻田陽介, 中嶋誠二, 藤沢浩訓, 朴正敏, 金島岳, 奥山雅則, 清水勝
- Organizer
  応用物理学会
- Place of Presentation
  厚木
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] Preparation of BiFeO_3 Films by Using Magnetic Field Assisted PLD andDual Ion Beam Sputtering Methods and Their Characterization2011
- Author(s)
  J. M. Park, S. Nakashima, M. Sohgawa, T. Kanashima, M. Okuyama
- Organizer
  ICAE 2011
- Place of Presentation
  Jeju, Korea
- Year and Date
  2011-11-07
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] Structural and Ferroelectric Properties of BiFeO_3 Thin Films Prepared by Dual Ion Beam Sputtering Process2011
- Author(s)
  S.Nakashima, H.Suminaga, Y.Tsujita, H.Fujisawa, M.Kobune, H.Nishioka, J.M.Park, T.Kanashima, M.Okuyama, M.Shimizu
- Organizer
  The 20th IEEE ISIF 2011
- Place of Presentation
  Vancouver, Canada
- Year and Date
  2011-07-24
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] Ferroelectric and Piezoelectric Properties of Polycrystalline BiFeO_3 Thin Films PreparedPulsed Laser Deposition under Magnetic Field2011
- Author(s)
  J. M. Park, S. Nakashima, T. Kanashima, M. Okuyama
- Organizer
  The 20th IEEE ISIF 2011
- Place of Presentation
  Vancouver, Canada
- Year and Date
  2011-07-24
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] Ferroelectric and Piezoelectric Properties of Polycrystalline BiFeO_3 Thin Films Prepared Pulsed Laser Deposition under Magnetic Field2011
- Author(s)
  J.M.Park, S.Nakashima, T.Kanashima, M.Okuyama
- Organizer
  The 20th IEEE ISIF 2011
- Place of Presentation
  Vancouver, Canada
- Year and Date
  2011-07-24
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] Passivation of Ge(100) and (111) Surfaces by Termination of Nonmetal Elements2011
- Author(s)
  D.H.Lee, K.Kubo, T.Kanashima, M.Okuyama
- Organizer
  2011 International Conference on Solid State Devices and Materials
- Place of Presentation
  愛知県産業労働センターウインクあいち(愛知県)
- Data Source
  KAKENHI-PROJECT-20560300
[Presentation] 磁場中PLD法によるBi_<1. 1>(Fe_<0. 9> Co_<0. 1>) O_3薄膜の作製と評価2011
- Author(s)
  後藤田文也、朴正敏、中嶋誠二、金島岳、奥山雅則
- Organizer
  FMA 2011
- Place of Presentation
  コープイン京都
- Year and Date
  2011-05-27
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] デュアルイオンビームスパタを用いるSrRuO_3/SrTiO_3基板上のBiFeO_3薄膜の作製2011
- Author(s)
  中嶋誠二、住永寛幸、辻田陽介、朴正敏、金島岳、奥山雅則、藤沢浩訓、小舟正文、清水勝
- Organizer
  FMA 2011
- Place of Presentation
  京都,コープイン京都
- Year and Date
  2011-05-27
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] 磁場中PLD法によるBi_<1.1>(Fe_<0.9>Co_<0.1>)O_3薄膜の作製と評価2011
- Author(s)
  後藤田文也、朴正敏、中嶋誠二、金島岳、奥山雅則
- Organizer
  FMA 2011
- Place of Presentation
  京都,コープイン京都
- Year and Date
  2011-05-27
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] HfO_2/Ge MIS構造のHCl表面処理による電気的特性の向上2011
- Author(s)
  久保和樹, Dong Hun Lee, 金島岳
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学(神奈川県)
- Year and Date
  2011-03-27
- Data Source
  KAKENHI-PROJECT-20560300
[Presentation] Passivation of Ge(100) and(111) Surfaces by Termination of Nonmetal Elements2011
- Author(s)
  D. H. Lee, K. Kubo, T. Kanashima and M. Okuyama
- Organizer
  2011 International Conference on Solid State Devices and Materials
- Place of Presentation
  Nagoya, Japan
- Data Source
  KAKENHI-PROJECT-20560300
[Presentation] Preparation of BiFeO_3 Films by Using Magnetic Field Assisted PLD and Dual Ion Beam Sputtering Methods and Their Characterization2011
- Author(s)
  J.M.Park, S.Nakashima, M.Sohgawa, T.Kanashima, M.Okuyama
- Organizer
  ICAE 2011
- Place of Presentation
  Jeju, Korea
- Year and Date
  2011-11-07
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] 磁場中PLD法によるBiFeO_3薄膜の微細構造と強誘電特性2011
- Author(s)
  朴正敏、中嶋誠二、寒川雅之、金島岳、奥山雅則
- Organizer
  応用物理学会
- Place of Presentation
  山形,山形大学
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] 磁場中PLD法のよるBiFeO_3薄膜の作製2011
- Author(s)
  朴正敏、後藤田文也、中嶋誠二、金島岳、奥山雅則
- Organizer
  応用物理学会
- Place of Presentation
  厚木
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] 磁場中PLD法によるBiFeO_3薄膜の微細構造と強誘電特性2011
- Author(s)
  朴正敏、中嶋誠二、寒川雅之、金島岳、奥山雅則
- Organizer
  応用物理学会
- Place of Presentation
  山形大学
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] デュアルイオンビームスパタを用いるBiFeO_3薄膜の作製(II)2011
- Author(s)
  辻田陽介、中嶋誠二、藤沢浩訓、西岡洋、小舟正文、朴正敏、金島岳、奥山雅則、清水勝
- Organizer
  応用物理学会
- Place of Presentation
  山形,山形大学
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] Improvement of Ferroelectric Properties of Bi_1.1Fe_<1-x>Co_xO_3 Thin Films Plrepared by Chemical Solution Deposition Using Iterative Rapid Thermal Annealing2010
- Author(s)
  Nguyen Truong Tho, T.Kanashima, M.Okuyama M.Noda, K.Saito
- Organizer
  第27回強誘電体応用会議
- Place of Presentation
  京都
- Year and Date
  2010-05-27
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] Synergistic Information Encoding by Combinatorial Pulse Operation of Ferroelectric Ceramic Capacitors2010
- Author(s)
  D.Ricinschi, T.Kanashima, M.Okuyama
- Organizer
  12^<th> International Ceramics Congress
- Place of Presentation
  Montecatini Terme, Italy
- Year and Date
  2010-06-10
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] PZT強誘電体キャパシタにおける多値メモリの安定性2010
- Author(s)
  Damian Nicastro, Dan Ricinschi, 金島岳、奥山雅則
- Organizer
  応用物理学会
- Place of Presentation
  平塚
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] F_2添加光MOCVD法により作製したHfO_2/Ge FETの特性向上2010
- Author(s)
  Donghun Lee, 今庄秀人, 吉岡裕一, 金島岳, 奥山雅則
- Organizer
  第57回応用物理学会学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-20560300
[Presentation] Characterization of Polycrystalline Sr-Substituted BiFeO_3 Thin Films Prepared by Pulsed Laser Deposition2010
- Author(s)
  J.M.Park, F.Gotoda, S.Nakashima, T.Kanashima, M.Okuyama
- Organizer
  The 10th Russia/CIS/Baltic/Japan Symposium on Ferroelectricity
- Place of Presentation
  横浜
- Year and Date
  2010-06-13
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] Synchrotron Radiation Diffraction Study of Electric-field-induced Strain BiFeO_3 Thin Films2010
- Author(s)
  M.Okuyama, S.Nakashima, W.Shimizu, O.Sakata, T.Kanashima, H.Funakubo
- Organizer
  2010 Villa Conference on Complex Oxide Heterostructrure
- Place of Presentation
  Santrini, Greece
- Year and Date
  2010-06-15
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] Large Ferroelectric and Magnetic Hystereses coexisting in BiFeO_3 Thin Films2010
- Author(s)
  M.Okuyama, J.M.Park, T.Kanashima
- Organizer
  12^<th> International Ceramics Congress
- Place of Presentation
  Montecatini Terme, Italy
- Year and Date
  2010-06-08
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] イオンビームスパッタ法を用いたBiFeO3薄膜の作製とその評価2010
- Author(s)
  辻田陽介、茅原智志、中嶋誠二、藤澤浩訓、朴正敏、金島岳、奥山雅則、清水勝
- Organizer
  応用物理学会
- Place of Presentation
  平塚
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] Post nitridation of fluorinated HfO2/Ge gate stack by nitrogen radical treatment2010
- Author(s)
  D.H.Lee, H.Lee, H.Imajo, Y.Yoshioka, T.Kanashima, M.Okuyama
- Organizer
  The 8th Japan-Korea Conference on Ferroelectrics(JKC-FE08)P1-026.
- Place of Presentation
  Himeji, Japan
- Data Source
  KAKENHI-PROJECT-20560300
[Presentation] Characterization of Interface States of HfO_2/Ge with Fluorine Treatment by Using DLTS/ICTS2010
- Author(s)
  T.Kanashima, Y.Yoshioka, D.Lee, M.Okuyama
- Organizer
  218th ECS Meeting
- Place of Presentation
  Las Vegas ; NV, USA
- Year and Date
  2010-10-10
- Data Source
  KAKENHI-PROJECT-20560300
[Presentation] Post nitridation of fluorinated HfO_2/ Ge gate stack by nitrogen radical treatment2010
- Author(s)
  D. H. Lee, H. Lee, H. Imajo, Y. Yoshioka, T. Kanashima and M. Okuyama
- Organizer
  The 8th Japan-Korea Conference on Ferroelectrics
- Place of Presentation
  Himeji, Japan,
- Data Source
  KAKENHI-PROJECT-20560300
[Presentation] Current Suppression and Magnetic Enhancement by Zn-Substitution in BiFeO_3 Thin Film Prepared by Pulsed Laser Deposition2010
- Author(s)
  J.M.Park, F.Gotoda, S.Nakashima, T, Kanashima, M.Okuyama
- Organizer
  The 7^<th>Asian Meeting on Ferroelectricity and the 7^<th> Asian Meeting on Electroceramics
- Place of Presentation
  Jeju, Korea
- Year and Date
  2010-07-01
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] Characterization of Interface States of HfO_2/ Ge with Fluorine Treatment by Using DLTS/ ICTS2010
- Author(s)
  T. Kanashima, Y. Yoshioka, D. H. Lee and M. Okuyama
- Organizer
  ECS Transactions
- Data Source
  KAKENHI-PROJECT-20560300
[Presentation] PLD法によるITO基板上薄膜の作製と評価2010
- Author(s)
  朴正敏、後藤田文也、中嶋誠二、金島岳、奥山雅則
- Organizer
  応用物理学会
- Place of Presentation
  平塚
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] Preparation and Characterization of BiFeO_3 Thin Film on ITO substrate by Pulsed Laser Deposition2010
- Author(s)
  J.M.Park, F.Gotoda, S.Nakashima, T, Kanashima, M.Okuyama
- Organizer
  The 8^<th> Japan-Korea Conference on Ferroelectrics
- Place of Presentation
  姫路、日本
- Year and Date
  2010-08-05
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] An Electric-field-induced Strain in Polycrystalline BiFeO_3 Thin Films at Low Temperature Studied by Synchrotron Radiation2010
- Author(s)
  S.Nakashima, O.Sakata, J.M.Park, H.Fujisawa, T.Yamada, H.Funakubo, T, Kanashima, M.Okuyama, M.Shimizu
- Organizer
  The 8^<th> Japan-Korea Conference on Ferroelectrics
- Place of Presentation
  姫路、日本
- Year and Date
  2010-08-04
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] Improvement of The Property of FET Having The HfO_2/ Ge Structure Fabricated by Photo-Assisted MOCVD with Fluorine Treatment2010
- Author(s)
  D. Lee, H. Imajo, T. Kanashima and M. Okuyama
- Organizer
  2010 International Conference on SOLID STATE DEVICES AND MATERIALS
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-20560300
[Presentation] Post nitridation of fluorinated HfO_2/Ge gate stack by nitrogen radical treatment2010
- Author(s)
  D.H, Lee, H.Lee, H.Imajo, Y.Yoshioka, T.Kanashima, M.Okuyama
- Organizer
  The 8th Japan-Korea Conference on Ferroelectrics (JKC-FE08)
- Place of Presentation
  Himeji, Japan
- Year and Date
  2010-08-03
- Data Source
  KAKENHI-PROJECT-20560300
[Presentation] Ferroelectric Properties of Epitaxial BiFeO_3 Thin Films Deposited by Ion Beam Sputtering2010
- Author(s)
  Y.Tsujita, S.Nakashima, H.Fujisawa, J.M.Park, T.Kanashima, M.Okuyama, M.Shimizu
- Organizer
  The 8^<th> Japan-Korea Conference on Ferroelectrics
- Place of Presentation
  姫路、日本
- Year and Date
  2010-08-05
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] Characterization of of BiFeO_3 Thin Film with Large c/a Axis Ratio on SrRuO_3/SrTiO_32010
- Author(s)
  S.Nakashima, Y.Tsujita, H.Fujisawa, J.M.Park, T, Kanashima, M.Okuyama, M.Shimizu
- Organizer
  The 20^<th> MRS-J Symposium
- Place of Presentation
  横浜
- Year and Date
  2010-12-20
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] Structural and Ferroelctric Properties of BiFeO_3 Thin Films Prepared by Ion Beam Sputtering Process2010
- Author(s)
  S.Nakashima, Y.Tsujita, S.Kayahara, H.Fujisawa, J.M.Park, T, Kanashima, M.Okuyama, M.Shimizu
- Organizer
  The 7^<th> Asian Meeting on Ferroelectricity and the 7^<th> Asian Meeting on Electroceramics
- Place of Presentation
  Jeju, Korea
- Year and Date
  2010-06-30
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] Characterization of Interface States of HfO_2/Ge with Fluorine Treatment by Using DLTS/ICTS2010
- Author(s)
  T.Kanashima, Y.Yoshioka, D.Lee, M.Okuyama
- Organizer
  218th ECS Meeting, p.1879.
- Place of Presentation
  Las Vegas, NV
- Data Source
  KAKENHI-PROJECT-20560300
[Presentation] Improvement of The Property of FET having The HfO_2/Ge Structure Fabricated by Photo-Assisted MOCVD with Fluorine Treatment2010
- Author(s)
  D.H.Lee, H.Imajo, T.Kanashima, M.Okuyama
- Organizer
  2010 International Conference on SOLID STATE DEVICES AND MATERIALS (SSDM2010)
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-20560300
[Presentation] イオンビームスパッタ法を用いたBiFeO_3薄膜の作製とその評価(II)2010
- Author(s)
  辻田陽介, 中嶋誠二, 藤沢浩訓, 朴正敏, 金島岳, 奥山雅則, 清水勝
- Organizer
  応用物理学会
- Place of Presentation
  長崎
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] Improvement of The Property of FET Having The HfO_2/Ge Structure Fabricated by Photo-Assisted MOCVD with Fluorine Treatment2010
- Author(s)
  D.Lee, H.Imajo, T.Kanashima, M.Okuyama
- Organizer
  2010 International Conference on SOLID STATE DEVICES AND MATERIALS, P-1-12.
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-20560300
[Presentation] Ge(100)表面と元素の反応の分子軌道解析と結合の安定性2009
- Author(s)
  Donghun Lee, 金島岳, 奥山雅則
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-20560300
[Presentation] RTAによるBiFe_<1-x>Co_xO_3薄膜の作製とその評価2009
- Author(s)
  NguyenTruong Tho, 金島岳、奥山雅則
- Organizer
  応用物理学会
- Place of Presentation
  富山
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] BiFeO_3膜におけるリーク電流の面内マッピング2009
- Author(s)
  中嶋誠二、藤澤浩訓、朴正敏、比企透雄、長副亮、金島岳、奥山雅則、清水勝
- Organizer
  応用物理学会
- Place of Presentation
  富山
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] Zn-doped BiFeO_3薄膜のPLDによる作製とその評価2009
- Author(s)
  朴正敏、中嶋誠二、後藤田文也、金島岳、奥山雅則
- Organizer
  応用物理学会
- Place of Presentation
  富山
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] DLTSおよびICTS法によるHfO□/GeのMIS構造の界面状態評価2009
- Author(s)
  吉岡祐一, Donghun Lee, 今庄秀人, 金島岳, 奥山雅則
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-20560300
[Presentation] HfO_2/ Ge MIS構造のF_2処理と窒素ラジカル処理による電気的特性の向上2009
- Author(s)
  今庄秀人, H. Lee, D.-H. Lee, 吉岡祐一, 金島岳, 奥山雅則
- Organizer
  シリコンテクノロジー(共催:電子情報通信学会シリコン材料・デバイス研究会(SDM))
- Place of Presentation
  応用物理学会分科会,東京大学
- Data Source
  KAKENHI-PROJECT-20560300
[Presentation] Leakage Current Reduction and Ferroelectric Property of Bil-xCoxO_3 Thin Films Prepared by Chemical solution Deposition Using Rapid Thermal Annealing2009
- Author(s)
  N.Nguen, T.Kanashima M.Okuyama
- Organizer
  Fall Meeting of Material Research Society
- Place of Presentation
  ボストン、米国
- Year and Date
  2009-12-01
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] (Invited) Recent Study about BiFeO3 Thin Films as FeRAM Capacitor and Improved Ferroelectric Gate Structure2009
- Author(s)
  M.Okuyama, S.Nakashima T.Kanashima
- Organizer
  Spring Meeting of Material Research Society
- Place of Presentation
  San Francisco. USA
- Year and Date
  2009-04-15
- Data Source
  KAKENHI-PROJECT-21360150
[Presentation] Fixed-Oxide-Charge Characterization by Photoreflectance Spectroscopy in HfO_2 on Ge Treated by Fluorine2008
- Author(s)
  T. Kanashima, H. Lee, Y. Mori, H. Imajo and M. Okuyama
- Organizer
  Proceedings of ECS Transactions(PRiME2008)
- Data Source
  KAKENHI-PROJECT-20560300
[Presentation] F_2表面処理したHfO_2/ Ge MIS構造の電気的特性評価2008
- Author(s)
  今庄秀人, H. Lee, 吉岡祐一, 金島岳, 奥山雅則
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会(SDM)
- Place of Presentation
  京都大学,桂キャンパス,
- Data Source
  KAKENHI-PROJECT-20560300
[Presentation] Theoretical analysis of fluorine-passivated germanium surface for high-k/Ge gate stack by molecular orbital method2008
- Author(s)
  H. Lee, D. H. Lee, T. Kanashima, M. Okuyama
- Organizer
  The 7th Korea-Japan Conference on Ferroelectric-ity
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-20560300
[Presentation] Fixed-Oxide-Charge Characterization by Photoreflectance Spectroscopy in HfO_2 on Ge Treated by Fluorine2008
- Author(s)
  T.Kanashima, H.Lee, Y.Mori, H.Imajo, M.Okuyama.
- Organizer
  Pacific Rim Meeting on Electrochemical and Solid-State Science, PRiME2008, p.2451.
- Place of Presentation
  Honolulu
- Data Source
  KAKENHI-PROJECT-20560300
[Presentation] Theoretical analysis of fluorine-passivated germanium surface for high-k/Ge gate stack by molecular orbital method2008
- Author(s)
  H.Lee, D.H.Lee, T.Kanashima, M.Okuyama
- Organizer
  The 7th Korea-Japan Conference on Ferroelectricity(KJC-FE07)P-08-27.
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-20560300
[Presentation] Theoretical analysis of fluorine-passivated germanium surface for high-k/ Ge gate stack by molecular orbital method2008
- Author(s)
  H. Lee, D. H. Lee, T. Kanashima and M. Okuyama
- Organizer
  The 7th Korea-Japan Conference on Ferroelectricity
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-20560300

1. OKUYAMA Masanori (60029569)

# of Collaborated Projects: 3 results

# of Collaborated Products: 53 results
2. NODA Minoru (20294168)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
3. SOHGAWA Masayuki (70403128)

# of Collaborated Projects: 1 results

# of Collaborated Products: 9 results
4. RICINSCHI Dan (60403127)

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results
5. 山下馨 (40263230)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. 上野智雄 (90223487)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. 舟窪浩 (90219080)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. KIJIMA Takeshi

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Kanashima Takeshi 金島 岳

KANASHIMA Takeshi 金島 岳

Research Projects

Research Products

Co-Researchers

High quality Ge-based transistor using epitaxially grown high-k gate insulatorsPrincipal Investigator

Principal Investigator

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Review Section

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Preparation of Ferromagnetic and Ferroelectric Thin Films by Pulsed Laser Deposition and Their Characterization

Principal Investigator

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Research Institution

Improvement of insulator/ Germanium interface by surface passivation for high-mobility Ge based transistor.Principal Investigator

Principal Investigator

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Research Institution

強誘電体薄膜の物性制御と次世代メモリデバイスへの応用

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

放射光による低温での極薄酸化・窒化膜形成の理論的実験的解明Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Improvement of ferroelectric and insulator layers in ferroelectric/insulator/semiconductor stacked gate structure

Principal Investigator

Project Period (FY)

Research Category

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Research Institution

[Book] Ferroelectrics Material Aspects, chapter 72011

Author(s)

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Data Source

[Journal Article] Passivation of Ge(100) and(111) Surfaces by Termination of Nonmetal Elements2012

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Preparation of BiFe_<0. 9> Co_<0. 1> O_3 Films by Pulsed Laser Deposition under Magnetic Field2011

Author(s)

Journal Title

Data Source

[Journal Article] Improvement in the Electrical Characteristics of a Fluorinated HfO_2/ Ge Gate Stack by Using a Nitrogen Radical Treatment2011

Author(s)

Journal Title

Data Source

[Journal Article] Preparation and Characterization of BiFeO_3 Thin Films on ITO Substrate by Pulsed Laser Deposition2011

Author(s)

Journal Title

DOI

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[Journal Article] Preparation of BiFeO_3 Thin Films on SrRuO_3/SrTiO_3(001) Substrate by Dual Ion Beam Sputtering Process2011

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[Journal Article] Studies on Electrical and Retention Enhancement Properties of Metal-Ferroelectric-Insulator-Semiconductor with Radical Irradiation Treatments2011

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[Journal Article] Mutiferroic Properties of Polycrystalline Sr-substituted BiFeO_3 Thin Films Prepared by Pulsed Laser Deposition2011

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[Journal Article] Preparation and Characterization of BiFeO_3 Thin Films on ITO Substrate by Pulsed Laser Deposition2011

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Kanashima Takeshi 金島岳

KANASHIMA Takeshi 金島岳