Matsuki Nobuyuki 松木伸行

… Alternative Names

松木伸行マツキノブユキ

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Researcher Number	30373450
Other IDs	https://orcid.org/0000-0001-9727-6262
Affiliation (Current)	2024: 神奈川大学, 工学部, 准教授
Affiliation (based on the past Project Information) *help	2015 – 2017: 神奈川大学, 工学部, 准教授 2006: 神奈川科技アカデミー, 研究員
Review Section/Research Field	Principal Investigator Crystal engineering / Electronic materials/Electric materials
Keywords	Principal Investigator 新評価手法確立 / 分光偏光解析 / 界面微視的構造 / ヘテロ接合太陽電池 / 結晶シリコン / Siヘテロ接合太陽電池 / 分光エリプソメトリー / a-Si:H/c-Siヘテロ接合 / 陽電子消滅 / 新規評価手法 / ボイド / 水素化アモルファスシリコン / a-Si:H/c-Siヘテロ接合太陽電池

Elucidation of void structure near the interface of a-Si:H/c-Si heterojunctionsPrincipal Investigator
- Principal Investigator
  
  Matsuki Nobuyuki
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Crystal engineering
- Research Institution
  Kanagawa University
ファンデルワールスエピタキシーを用いたフレキシブル半導体デバイスの創製Principal Investigator
- Principal Investigator
  
  松木伸行
- Project Period (FY)
  2006
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kanagawa Academy of Science and Technology

All 2018 2017 2015

All Presentation

[Presentation] a-Si:H/c-Siヘテロ界面近傍ボイド構造の高速評価－ボイドサイズと光学パラメータの相関普遍性に関する考察－2018
- Author(s)
  松木伸行、松井卓矢、満汐孝治、オロークブライアン、大島永康、上殿明良
- Organizer
  第65回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15K04663
[Presentation] a-Si:H/c-Siヘテロ界面近傍ボイド構造の高速評価－ボイドサイズ・水素結合・Si結合角ゆらぎの相互相関－2017
- Author(s)
  松木伸行、オロークブライアン、大島永康、上殿明良
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15K04663
[Presentation] Fast optical determination of microvoid size in hydrogenated amorpshous silicon layers based on data obtained from positron annihilation spectroscopy2017
- Author(s)
  N. Matsuki, N. Oshima, B. O’Rourke, A. Uedono
- Organizer
  27th International Photovoltaic Science and Engineering Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K04663
[Presentation] a-Si:H/c-Siヘテロ界面構造評価：陽電子消滅データに基づく分光エリプソメトリー解析の適用2015
- Author(s)
  松木伸行
- Organizer
  第61回　CVD研究会
- Place of Presentation
  ユースパルいしかわ、金沢市、石川県
- Year and Date
  2015-08-28
- Data Source
  KAKENHI-PROJECT-15K04663
[Presentation] Characterization of microvoid structure in a-Si:H/c-Si heterojunctions via positron annihilation and spectroscopic ellipsometry2015
- Author(s)
  N. Matsuki
- Organizer
  The 5th Asia-Africa Sustainable Energy Forum Jointly with 7th International Workshop on Sahara Solar Breeder
- Place of Presentation
  University of Tsukuba, Tsukuba, Japan
- Year and Date
  2015-05-12
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K04663

1. 大島永康 (00391889)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
2. 上殿明良 (20213374)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
3. ORourke Brian (60586551)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. BRIAN O rourke

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results

Matsuki Nobuyuki 松木 伸行

松木 伸行 マツキ ノブユキ

Research Projects

Research Products

Co-Researchers

Elucidation of void structure near the interface of a-Si:H/c-Si heterojunctionsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

ファンデルワールスエピタキシーを用いたフレキシブル半導体デバイスの創製Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Presentation] a-Si:H/c-Siヘテロ界面近傍ボイド構造の高速評価 －ボイドサイズと光学パラメータの相関普遍性に関する考察－2018

Author(s)

Organizer

Data Source

[Presentation] a-Si:H/c-Siヘテロ界面近傍ボイド構造の高速評価 －ボイドサイズ・水素結合・Si結合角ゆらぎの相互相関－2017

Author(s)

Organizer

Data Source

[Presentation] Fast optical determination of microvoid size in hydrogenated amorpshous silicon layers based on data obtained from positron annihilation spectroscopy2017

Author(s)

Organizer

Data Source

[Presentation] a-Si:H/c-Siヘテロ界面構造評価：陽電子消滅データに基づく分光エリプソメトリー解析の適用2015

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Characterization of microvoid structure in a-Si:H/c-Si heterojunctions via positron annihilation and spectroscopic ellipsometry2015

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

Matsuki Nobuyuki 松木伸行

松木伸行マツキノブユキ

[Presentation] a-Si:H/c-Siヘテロ界面近傍ボイド構造の高速評価－ボイドサイズと光学パラメータの相関普遍性に関する考察－2018

[Presentation] a-Si:H/c-Siヘテロ界面近傍ボイド構造の高速評価－ボイドサイズ・水素結合・Si結合角ゆらぎの相互相関－2017