KOIZUMI ATSUSHI 小泉淳

Researcher Number	30418735
Other IDs
Affiliation (based on the past Project Information) *help	2016: 大阪大学, 工学研究科, 助教 2012 – 2016: 大阪大学, 工学(系)研究科(研究院), 助教
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials Except Principal Investigator Electronic materials/Electric materials
Keywords	Principal Investigator 共添加 / DLTS / 半導体物性 / 赤色発光ダイオード / 有機金属気相エピタキシャル法 / ユウロピウム / 窒化物半導体 / 希土類添加半導体 Except Principal Investigator 希土類元素 / 電気・電子材料 … More / 光物性 / 結晶成長 / エネルギー輸送機構 / オプトロニクス / 局所構造 / エネルギー伝達機構 / 発光ダイオード / 発光機能制御 / 薄膜 Less

GaNに添加されたEuイオンのナノサイズ変調ドープによる高効率赤色発光素子の開発Principal Investigator
- Principal Investigator
  
  小泉淳
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka University
Fabrication of highly efficient luminescence of rare-earth doped nitride semiconductors by control of local structures around rare-earth ionsPrincipal Investigator
- Principal Investigator
  
  KOIZUMI ATSUSHI
- Project Period (FY)
  2014 – 2015
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka University
Development of bright red light-emitting devices by elucidation and control of light-emitting mechanism in rare-earth-doped nitride semiconductors
- Principal Investigator
  
  FUJIWARA Yasufumi
- Project Period (FY)
  2012 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka University
赤色発光を示す希土類添加窒化物半導体におけるエネルギー輸送機構の解明
- Principal Investigator
  
  藤原康文
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka University

All 2017 2016 2015 2014 2013 2012 Other

All Journal Article Presentation Book Patent

[Book] Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics2016
- Author(s)
  A. Koizumi, B. Mitchell, V. Dierolf, and Y. Fujiwara
- Total Pages
  22
- Publisher
  Woodhead Publishing
- Data Source
  KAKENHI-PROJECT-26820113
[Journal Article] Synthesis and Characterization of a Novel Liquid Eu Precursor EuCppm2 Allowing for the Control of the Eu Oxidation State Ratio in GaN Thin Films Grown by OMVPE2017
- Author(s)
  B. Mitchell, A. Koizumi, T. Nunokawa, Y. Kuboshima, T. Mogi, S. Higashi, K. Kikukawa, H. Ofuchi, T. Honma, and Y. Fujiwara
- Journal Title
  
  Materials Chemistry and Physics
  
  Volume: 193 Pages: 140-146
- DOI
  10.1016/j.matchemphys.2017.02.021
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24226009, KAKENHI-PROJECT-17H01264
[Journal Article] High-power Eu-doped GaN red LED based on a multilayer structure grown at lower temperatures by organometallic vapor phase epitaxy2017
- Author(s)
  W. Zhu, B. Mitchell, D. Timmerman, A. Koizumi, T. Gregorkiewicz, and Y. Fujiwara
- Journal Title
  
  MRS Advances
  
  Volume: 2 Issue: 3 Pages: 159-164
- DOI
  10.1557/adv.2017.67
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24226009, KAKENHI-PROJECT-17H01264
[Journal Article] Emission enhancement and its mechanism of Eu-doped GaN by strain engineering2017
- Author(s)
  T. Inaba, B. Mitchell, A. Koizumi, and Y. Fujiwara
- Journal Title
  
  Optical Materials Express
  
  Volume: 7 Issue: 4 Pages: 1381-1387
- DOI
  10.1364/ome.7.001381
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24226009, KAKENHI-PROJECT-17H01264
[Journal Article] Detection of In segregation in InGaN by using Eu as a probe2017
- Author(s)
  J. Takatsu, B. Mitchell, A. Koizumi, S. Yamanaka, M. Matsuda, T. Gregorkiewicz, T. Kojima, and Y. Fujiwara
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 470 Pages: 831-834
- DOI
  10.1016/j.jcrysgro.2016.12.101
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24226009, KAKENHI-PROJECT-17H01264
[Journal Article] Surface morphology and optical properties of Eu3+ ions incorporated into N-polar GaN grown by organometallic vapor phase epitaxy2017
- Author(s)
  R. Fuji, B. Mitchell, A. Koizumi, T. Inaba, and Y. Fujiwara
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 470 Pages: 862-865
- DOI
  10.1016/j.jcrysgro.2017.01.015
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24226009, KAKENHI-PROJECT-17H01264
[Journal Article] Control of GaN facet structures through Eu doping toward achieving semipolar {1-101} and {2-201} InGaN/GaN quantum wells2016
- Author(s)
  T. Kojima, S. Takano, R. Hasegawa, D. Timmerman, A. Koizumi, M. Funato, Y. Kawakami, and Y. Fujiwara
- Journal Title
  
  Applied Physics Letters
  
  Volume: 109 Issue: 18
- DOI
  10.1063/1.4965844
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24226009
[Journal Article] Optical and Electrical Study of Defects in GaN in situ doped with Eu3+ ion grown by OMVPE2016
- Author(s)
  J. Wang, A. Koizumi, Y. Fujiwara, and W. M. Jadwisienczak
- Journal Title
  
  Journal of Electronic Materials
  
  Volume: 45 Issue: 12 Pages: 6355-6362
- DOI
  10.1007/s11664-016-4983-6
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24226009
[Journal Article] Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity2016
- Author(s)
  T. Inaba, D. Lee, R. Wakamatsu, T. Kojima, B. Mitchell, A. Capretti, T. Gregorkiewicz, A.Koizumi, and Y. Fujiwara
- Journal Title
  
  AIP Advances
  
  Volume: 6 Issue: 4 Pages: 045105-045105
- DOI
  10.1063/1.4946849
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15J00887, KAKENHI-PROJECT-24226009
[Journal Article] Dimerization of emission centers in Eu-doped GaN red light-emitting diode: cooperative charge capturing using valence states coupling2016
- Author(s)
  M. Ishii, A. Koizumi, and Y. Fujiwara
- Journal Title
  
  Journal of Physics: Condensed Matter
  
  Volume: 29 Issue: 2 Pages: 025702-025702
- DOI
  10.1088/0953-8984/29/2/025702
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24226009, KAKENHI-PROJECT-26420287
[Journal Article] Trapping of injection charges in emission centers of GaN:Eu red LED characterized with 1/f noise involved in forward current2016
- Author(s)
  M. Ishii, A. Koizumi, and Y. Fujiwara
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: ５５ Issue: 1 Pages: 015801-015801
- DOI
  10.7567/jjap.55.015801
- NAID
  210000145898
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-26420287, KAKENHI-PROJECT-24226009
[Journal Article] Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications2016
- Author(s)
  B. Mitchell, D. Timmerman, J. Poplawsky, W. Zhu, D. Lee, R. Wakamatsu, J. Takatsu, M. Matsuda, W. Guo, K. Lorenz, E. Alves, A. Koizumi, V. Dierolf, and Y. Fujiwara
- Journal Title
  
  Scientific Reports
  
  Volume: 6 Issue: 1
- DOI
  10.1038/srep18808
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24226009, KAKENHI-PROJECT-26820113
[Journal Article] Study of defects in GaN in situ doped with Eu3+ ion grown by OMVPE2016
- Author(s)
  J. Wang, A. Koizumi, Y. Fujiwara, and W. M. Jadwisienczak
- Journal Title
  
  Journal of Electronic Materials
  
  Volume: 45 Issue: 4 Pages: 2001-2007
- DOI
  10.1007/s11664-016-4337-4
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24226009, KAKENHI-PROJECT-26820113
[Journal Article] Enhanced photo/electroluminescence properties of GaN:Eu through optimization of the growth conditions and defect environment2016
- Author(s)
  W. Zhu, B. Mitchell, D. Timmerman, A. Uedono, A. Koizumi, and Y. Fujiwara
- Journal Title
  
  APL Materials
  
  Volume: 4 Issue: 5
- DOI
  10.1063/1.4950826
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24226009
[Journal Article] Resonant energy transfer between Eu luminescent sites and their local geometry in GaN2015
- Author(s)
  D. Timmerman, R. Wakamatsu, K. Tanaka, D. Lee, A. Koizumi, and Y. Fujiwara
- Journal Title
  
  Applied Physics Letters
  
  Volume: 107 Issue: 15
- DOI
  10.1063/1.4933301
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24226009, KAKENHI-PROJECT-26630131
[Journal Article] In situ Eu doping into AlxGa1-xN grown by organometallic vapor phase epitaxy to improve luminescence properties2015
- Author(s)
  A. Koizumi, K. Kawabata, D. Lee, A. Nishikawa, Y. Terai, H. Ofuchi, T. Honma, and Y. Fujiwara
- Journal Title
  
  Optical Materials
  
  Volume: 41 Pages: 75-79
- DOI
  10.1016/j.optmat.2014.11.005
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24226009, KAKENHI-PROJECT-26820113
[Journal Article] Unique properties of photoluminescence excitation spectra in a Eu-doped GaN epitaxial film2015
- Author(s)
  M. Nakayama, S. Nakamura, H. Takeuchi, A. Koizumi, and Y. Fujiwara
- Journal Title
  
  Applied Physics Letters
  
  Volume: 106 Issue: 1
- DOI
  10.1063/1.4905309
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24226009
[Journal Article] Three-dimensional spectrum mapping of bright emission centers: investigating the brightness-limiting process in Er-doped GaN red LEDs2015
- Author(s)
  M. Ishii, A. Koizumi, and Y. Fujiwara
- Journal Title
  
  Applied Physics Letters
  
  Volume: 107 Issue: 8 Pages: 0821061-4
- DOI
  10.1063/1.4929531
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-26420287, KAKENHI-PROJECT-24226009
[Journal Article] Enhanced excitation efficiency of Eu ions in Eu-doped GaN/AlGaN multiple quantum well structures grown by organometallic vapor phase epitaxy2015
- Author(s)
  T. Arai, D. Timmerman, R. Wakamatsu, D. Lee, A. Koizumi, and Y. Fujiwara
- Journal Title
  
  Journal of Luminescence
  
  Volume: 158 Pages: 70-74
- DOI
  10.1016/j.jlumin.2014.09.036
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24226009
[Journal Article] Nanoscale determinant to brighten up GaN:Eu red light-emitting diode: Local potential of Eu-defect complexes2015
- Author(s)
  Masashi Ishii, Atsushi Koizumi, and Yasufumi Fujiwara
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 117 Issue: 15 Pages: 1553071-7
- DOI
  10.1063/1.4918662
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-26820113, KAKENHI-PROJECT-26420287, KAKENHI-PROJECT-24226009
[Journal Article] Afterglow of Eu-related emission in Eu-doped gallium nitride grown by organometallic vapor phase epitaxy2014
- Author(s)
  R. Wakamatsu, D. Timmerman, D. Lee, A. Koizumi, and Y. Fujiwara
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 116 Issue: 4
- DOI
  10.1063/1.4891232
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24226009
[Journal Article] The role of donor-acceptor pairs in the excitation mechanism of Eu-ions in GaN:Eu epitaxial layers2014
- Author(s)
  B. Mitchell, J. Poplawsky, D. Lee, A. Koizumi, Y. Fujiwara, and V. Dierolf
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 115 Issue: 20
- DOI
  10.1063/1.4879253
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24226009, KAKENHI-PROJECT-26820113
[Journal Article] 希土類添加GaNとLED応用2014
- Author(s)
  藤原康文、小泉淳
- Journal Title
  
  レーザー研究
  
  Volume: 42 Pages: 211-215
- NAID
  130007897579
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24226009
[Journal Article] 希土類添加GaNとLED応用2014
- Author(s)
  藤原康文, 小泉淳
- Journal Title
  
  レーザー研究
  
  Volume: 42 Pages: 211-215
- NAID
  130007897579
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26820113
[Journal Article] Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode2014
- Author(s)
  Y. Kashiwagi, A. Koizumi, Y. Takemura, S. Furuta, M. Yamamoto, M. Saitoh, M. Takahashi, T. Ohno, Y. Fujiwara, K. Murahashi, K. Ohtsuka, and M. Nakamoto
- Journal Title
  
  Applied Physics Letters
  
  Volume: 105 Issue: 22 Pages: 223509-223509
- DOI
  10.1063/1.4903234
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24226009
[Journal Article] Enhancement in light efficiency of a GaN:Eu red light-emitting diode by pulse-controlled injected charges2014
- Author(s)
  M. Ishii, A. Koizumi, and Y. Fujiwara
- Journal Title
  
  Applied Physics Letters
  
  Volume: 105 Issue: 17
- DOI
  10.1063/1.4900840
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24226009, KAKENHI-PROJECT-26420287, KAKENHI-PROJECT-26820113
[Journal Article] Control of Eu luminescence centers by codoping of Mg and Si in Eu-doped GaN2013
- Author(s)
  D. Lee, R. Wakamatsu, A. Koizumi, Y. Terai, and Y. Fujiwara
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 8S Pages: 08JM01-08JM01
- DOI
  10.7567/jjap.52.08jm01
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24226009
[Journal Article] Luminescence properties of Eu-doped GaN under resonant excitation and quantitative evaluation of luminescent sites2013
- Author(s)
  R. Wakamatsu, D. Lee, A. Koizumi, V. Dierolf, and Y. Fujiwara
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 114 Issue: 4
- DOI
  10.1063/1.4816088
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24226009
[Journal Article] 希土類添加半導体の精密制御成長と発光機能2013
- Author(s)
  小泉淳、藤原康文
- Journal Title
  
  スマートプロセス学会誌
  
  Volume: 2 Pages: 213-218
- NAID
  10031200067
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24226009
[Journal Article] Electron-beam-induced migration of hydrogen in Mg-doped GaN using Eu as a probe2013
- Author(s)
  B. Mitchell, D. Lee, D. Lee, A. Koizumi, J. Poplawsky, Y. Fujiwara, and V. Dierolf
- Journal Title
  
  Physical Review B
  
  Volume: 88 Issue: 12
- DOI
  10.1103/physrevb.88.121202
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24226009
[Journal Article] Effect of annealing on Eu-Mg-H complex optical center in Eu,Mg-codoped GaN grown by organometallic vapor phase epitaxy2013
- Author(s)
  D. Lee, R. Wakamatsu, A. Koizumi, Y. Terai, J. D. Poplawsky, V. Dierolf, and Y. Fujiwara
- Journal Title
  
  Applied Physics Letters
  
  Volume: 102 Issue: 14
- DOI
  10.1063/1.4800447
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24226009
[Journal Article] Luminescence properties of Eu-doped GaN grown on GaN substrate2013
- Author(s)
  R. Wakamatsu, D. Lee, A. Koizumi, V. Dierolf, Y. Terai, and Y. Fujiwara
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 8S Pages: 08JM03-08JM03
- DOI
  10.7567/jjap.52.08jm03
- NAID
  210000142745
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24226009
[Patent] 窒化物半導体基板とその製造方法および半導体デバイス2016
- Inventor(s)
  藤原康文、朱婉新、小泉淳、他2名
- Industrial Property Rights Holder
  藤原康文、朱婉新、小泉淳、他2名
- Industrial Property Rights Type
  特許
- Filing Date
  2016-11-25
- Data Source
  KAKENHI-PROJECT-24226009
[Patent] 赤色発光半導体素子とその製造方法2013
- Inventor(s)
  藤原康文、小泉淳
- Industrial Property Rights Holder
  藤原康文、小泉淳
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-047022
- Filing Date
  2013-03-08
- Data Source
  KAKENHI-PROJECT-24226009
[Patent] 赤色発光半導体素子とその製造方法、および窒化物半導体素子用基板とその製造方法2012
- Inventor(s)
  藤原康文、小泉淳、寺井慶和
- Industrial Property Rights Holder
  藤原康文、小泉淳、寺井慶和
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2012-184347
- Filing Date
  2012-08-23
- Data Source
  KAKENHI-PROJECT-24226009
[Presentation] Current understanding of Eu emission centers in Eu-doped GaN grown by organometallic vapor-phase epitaxy2016
- Author(s)
  A. Koizumi and Y. Fujiwara
- Organizer
  9th Pacific Rim International Conference on Advanced Materials and Processing
- Place of Presentation
  国立京都国際会館（京都府・京都市）
- Year and Date
  2016-08-01
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Towards highly efficient wavelength-stable red light-emitting diodes using Eu-doped GaN2016
- Author(s)
  Y. Fujiwara, T. Inaba, B. Mitchell, T. Kojima, and A. Koizumi
- Organizer
  International Conference on Processing & Manufacturing of Advanced Materials; Processing, Fabrication, Properties, Applications (THERMEC’2016)
- Place of Presentation
  Graz, Austria
- Year and Date
  2016-05-29
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24226009
[Presentation] Eu添加GaNにおける2価Euイオンの出現とその制御2016
- Author(s)
  布川拓未, 小泉淳, 松田将明, 朱婉新, 藤原康文
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス（東京都・目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Valence state control of Eu ions in Eu-doped GaN grown by organometallic vapor phase epitaxy2016
- Author(s)
  Y. Fujiwara, T. Nunokawa, M. Matsuda, W. Zhu, T. Kojima, and A. Koizumi
- Organizer
  Workshop on Computational Nano-Materials Design and Realization for Energy-Saving and Energy-Creation Materials
- Place of Presentation
  大阪大学（大阪府・吹田市）
- Year and Date
  2016-03-25
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Current understanding of Eu emission centers in Eu-doped GaN grown by organometallic vapor phase epitaxy2016
- Author(s)
  A. Koizumi and Y. Fujiwara
- Organizer
  9th Pacific Rim International Conference on Advanced Materials and Processing (PRICM9)
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2016-08-01
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24226009
[Presentation] The Influence of Local and Extended Defect Environments on the Optical and Material Properties of GaN:Eu2016
- Author(s)
  B. B.Mitchell, W. Zhu, J. Poplawsky, A. Koizumi, V. Dierolf, and Y. Fujiwara
- Organizer
  2016 MRS Fall Meeting, Symposium EM2: Rare-Earths in Advanced Photonics and Spintronics
- Place of Presentation
  Boston, USA
- Year and Date
  2016-11-27
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24226009
[Presentation] Eu添加GaNにおけるEuイオンの価数制御2016
- Author(s)
  布川拓未, 小泉淳, 松田将明, 朱婉新, 藤原康文
- Organizer
  平成27年度第4回半導体エレクトロニクス部門委員会第1回講演会・見学会
- Place of Presentation
  福井大学（福井県・福井市）
- Year and Date
  2016-01-30
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Valence state control of Eu ions in Eu-doped GaN grown by organometallic vapor phase epitaxy2016
- Author(s)
  Y. Fujiwara, T. Nunokawa, M. Matsuda, W. Zhu, T. Kojima, and A. Koizumi
- Organizer
  Workshop on Computational Nano-Materials Design and Realization for Energy-Saving and Energy-Creation Materials
- Place of Presentation
  Osaka University, Japan
- Year and Date
  2016-03-25
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24226009
[Presentation] Enhanced Red Photo/electroluminescence from Eu-doped GaN through Optimization of Defect Environment2016
- Author(s)
  Y. Fujiwara, W. Zhu, B. Mitchell, D. Timmerman, A. Uedono, and A. Koizumi
- Organizer
  4th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA’16)
- Place of Presentation
  Pacifico-Yokohama, Yokohama, Japan
- Year and Date
  2016-05-18
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24226009
[Presentation] Relationship between electrical and luminescence properties of GaN/Eu-doped GaN multiple-nanolayer structures investigated with impedance spectroscopy2016
- Author(s)
  W. Zhu, M. Ishii, A. Koizumi, Y. Fujiwara
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス（東京都・目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Enhanced red emission from Eu ions embedded in a GaN resonant optical microcavity2016
- Author(s)
  Y. Fujiwara, T. Inaba, T. Kojima, B. Mitchell, A. Capretti, T. Gregorkiewicz, and A. Koizumi
- Organizer
  Collaborative Conference on 3D and Materials Research 2016 (CC3DMR2016)
- Place of Presentation
  Incheon, Seoul, Korea
- Year and Date
  2016-06-20
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24226009
[Presentation] Towards highly efficient wavelength-stable red light-emitting diodes using Eu-doped GaN as an active layer2015
- Author(s)
  Y. Fujiwara, T. Kojima, and A. Koizumi
- Organizer
  Workshop on Frontier Photonic and Electronic Materials and Devices - 2015 German-Japanese-Spanish Joint Workshop -
- Place of Presentation
  芝蘭会館（京都府・京都市）
- Year and Date
  2015-07-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Characterization of GaN/Eu-doped GaN multiple-nanolayer structures grown by low-temperature organometallic vapor phase epitaxy2015
- Author(s)
  W. Zhu, D. Timmerman, B. Mitchell, A. Koizumi, T. Gregorkiewicz, and Y. Fujiwara
- Organizer
  11th International Conference on Nitride Semiconductors
- Place of Presentation
  Beijing, China
- Year and Date
  2015-08-30
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Energy migration between Eu luminescent sites in Eu-doped GaN2015
- Author(s)
  Y. Fujiwara, R. Wakamatsu, D. Timmerman, and A. Koizumi
- Organizer
  7th Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  Seoul, Korea
- Year and Date
  2015-05-17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Present understanding of Eu luminescent centers in Eu-doped GaN2015
- Author(s)
  Y. Fujiwara, R. Wakamatsu, A. Koizumi, and V. Dierolf
- Organizer
  Collaborative Conference on 3D and Materials Research 2015
- Place of Presentation
  Busan, Korea
- Year and Date
  2015-06-15
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] OMVPE 法によるEu 添加InxGa1-xNの作製とEu発光特性評価2015
- Author(s)
  高津潤一, 山中柊平, 松田将明, 小泉淳, 児島貴徳, 藤原康文
- Organizer
  第76回応用物理学会春季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県・名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Separation of Eu-related trap levels in Eu-doped GaN by Laplace deep level transient spectroscopy2015
- Author(s)
  T. Shigemune, A. Koizumi, and Y. Fujiwara
- Organizer
  19th SANKEN International, The 14th SANKEN Nanotechnology Symposium, 3rd KANSAI Nanoscience and Nanotechnology, 11th Handai Nanoscience and Nanotechnology International Symposium
- Place of Presentation
  大阪大学（大阪府・吹田市）
- Year and Date
  2015-12-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] GaN/Eu添加GaNナノ構造によるEu発光効率の著しい増大2015
- Author(s)
  朱婉新, B. Mitchell, D. Timmerman, 小泉淳, T. Gregorkiewicz, 藤原康文
- Organizer
  平成27年度第2回半導体エレクトロニクス部門委員会第1回研究会
- Place of Presentation
  大阪工業大学うめきたナレッジセンター（大阪府・大阪市）
- Year and Date
  2015-07-11
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Present understanding of Eu luminescent centers in Eu-doped GaN2015
- Author(s)
  Y. Fujiwara, R. Wakamatsu, A. Koizumi, and V. Dierolf
- Organizer
  Collaborative Conference on 3D and Materials Research 2015 (CC3DMR2015)
- Place of Presentation
  BEXCO, Busan, Korea
- Year and Date
  2015-06-15
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24226009
[Presentation] Eu添加InxGa1-xNにおけるEu発光特性評価とその応用2015
- Author(s)
  高津潤一, 小泉淳, 山中柊平, 松田将明, 児島貴徳, 藤原康文
- Organizer
  平成27年度第3回半導体エレクトロニクス部門委員会第2回研究会
- Place of Presentation
  京都大学桂キャンパス（京都府・京都市）
- Year and Date
  2015-11-21
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Towards highly efficient wavelength-stable red light-emitting diodes using Eu-doped GaN as an active layer2015
- Author(s)
  Y. Fujiwara, T. Kojima, and A. Koizumi
- Organizer
  Workshop on Frontier Photonic and Electronic Materials and Devices -2015 German-Japanese-Spanish Joint Workshop-
- Place of Presentation
  Shiran-Kaikan, Kyoto University, Kyoto, Japan
- Year and Date
  2015-07-11
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24226009
[Presentation] Electrical properties of trapping level related to the excitation of Eu luminescent center in Eu-doped GaN investigated by thermally stimulated current2015
- Author(s)
  A. Koizumi, Y. Maruyama, K. Okada, T. Shigemune, T. Kojima, and Y. Fujiwara
- Organizer
  6th International Symposium on Growth of III-Nitrides
- Place of Presentation
  アクトシティ浜松（静岡県・浜松市）
- Year and Date
  2015-11-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Towards highly efficient wavelength-stable red light-emitting diodes with Eu-doped GaN: effects of in-plane strain on Eu emission-2015
- Author(s)
  Y. Fujiwara, T. Inaba, T. Kojima, and A. Koizumi
- Organizer
  5th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2015)
- Place of Presentation
  Lakeshore Hotel, Hsinchu, Taiwan
- Year and Date
  2015-09-06
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24226009
[Presentation] Valence control of Eu ions in Eu-doped GaN grown by organometallic vapor phase epitaxy2015
- Author(s)
  Y. Fujiwara, M. Matsuda, W. Zhu, T. Kojima, and A. Koizumi
- Organizer
  SPIE Nanoscience + Engineering
- Place of Presentation
  San Diego, USA
- Year and Date
  2015-08-09
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24226009
[Presentation] プラスDLTS測定によるEu添加GaNにおけるEu関連トラップ準位の分離2015
- Author(s)
  重宗翼, 小泉淳, 藤原康文
- Organizer
  平成27年度第3回半導体エレクトロニクス部門委員会第2回研究会
- Place of Presentation
  京都大学桂キャンパス（京都府・京都市）
- Year and Date
  2015-11-21
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Luminescence properties of Eu-doped InxGa1-xN and their application to the detection of In segregation2015
- Author(s)
  J. Takatsu, A. Koizumi, S. Yamanaka, M. Matsuda, T. Kojima, and Y. Fujiwara
- Organizer
  19th SANKEN International, The 14th SANKEN Nanotechnology Symposium, 3rd KANSAI Nanoscience and Nanotechnology, 11th Handai Nanoscience and Nanotechnology International Symposium
- Place of Presentation
  大阪大学（大阪府・吹田市）
- Year and Date
  2015-12-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Drastic enhancement of Eu emission from red light-emitting Eu-doped GaN in a microcavity2015
- Author(s)
  Y. Fujiwara, T. Inaba, T. Kojima, and A. Koizumi
- Organizer
  11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR 2015)
- Place of Presentation
  BEXCO, Busan, Korea
- Year and Date
  2015-08-24
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24226009
[Presentation] Valence control of Eu ions in Eu-doped GaN grown by organometallic vapor phase epitaxy2015
- Author(s)
  Y. Fujiwara, M. Matsuda, W. Zhu, T. Kojima, and A. Koizumi
- Organizer
  SPIE Nanoscience + Engineering
- Place of Presentation
  San Diego, USA
- Year and Date
  2015-08-09
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Eu,O 共添加GaN におけるDLTS 法を用いたトラップ準位の測定2015
- Author(s)
  重宗翼、小泉淳、児島貴徳、藤原康文
- Organizer
  平成26年度第4回半導体エレクトロニクス部門委員会第1回講演会
- Place of Presentation
  広島大学学士会館レセプションホール（東広島市）
- Year and Date
  2015-01-24
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Towards highly efficient wavelength-stable red light-emitting diodes using Eu-doped GaN2015
- Author(s)
  Y. Fujiwara, T. Inaba, B. Mitchell, T. Kojima, and A. Koizumi
- Organizer
  2nd International Workshop on Luminescent Materials 2015
- Place of Presentation
  京都大学（京都府・京都市）
- Year and Date
  2015-12-12
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Towards highly efficient wavelength-stable red light-emitting diodes using Eu-doped GaN2015
- Author(s)
  Y. Fujiwara, T. Inaba, B. Mitchell, T. Kojima, and A. Koizumi
- Organizer
  2nd International Workshop on Luminescent Materials 2015 (LumiMat’15)
- Place of Presentation
  Kyoto University, Kyoto, Japan
- Year and Date
  2015-12-12
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24226009
[Presentation] Luminescence properties of Eu-doped InxGa1-xN grown by organometallic vapor-phase epitaxy2015
- Author(s)
  A. Koizumi, S. Yamanaka, M. Matsuda, and Y. Fujiwara
- Organizer
  34nd Electronic Materials Symposium
- Place of Presentation
  ラフォーレ琵琶湖（滋賀県・守山市）
- Year and Date
  2015-07-15
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Eu添加GaN赤色LEDの高輝度化に向けて2015
- Author(s)
  藤原康文、稲葉智宏，朱婉新，児島貴徳，小泉淳
- Organizer
  日本学術振興会　ワイドギャップ半導体光・電子デバイス第162委員会第96回研究会
- Place of Presentation
  湯田温泉ホテルかめ福、山口市
- Year and Date
  2015-12-11
- Invited
- Data Source
  KAKENHI-PROJECT-24226009
[Presentation] Eu添加GaNに及ぼすO共添加の効果2014
- Author(s)
  松田将明，李東建，高津潤一，児島貴徳，小泉淳，藤原康文
- Organizer
  平成26年度日本材料学会第2回半導体エレクトロニクス部門委員会第1回研究会
- Place of Presentation
  大阪大学吹田キャンパス（吹田市）
- Year and Date
  2014-07-26
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Eu添加GaNにおける赤色発光効率のEuイオン局所構造依存性2014
- Author(s)
  藤原康文、若松龍太、小泉淳
- Organizer
  第353回蛍光体同学会講演会
- Place of Presentation
  化学会館ホール（東京都千代田区）
- Year and Date
  2014-06-06
- Invited
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] 二波長励起PL測定によるEu添加GaNのエネルギー輸送機構の解明2014
- Author(s)
  岡田浩平，若松龍太，Dolf Timmerman，児島貴徳，小泉淳，藤原康文
- Organizer
  平成26年度日本材料学会第2回半導体エレクトロニクス部門委員会第1回研究会
- Place of Presentation
  大阪大学吹田キャンパス（吹田市）
- Year and Date
  2014-07-26
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Eu添加GaNにおける赤色発光効率のEuイオン局所構造依存性2014
- Author(s)
  藤原康文、若松龍太、小泉淳
- Organizer
  第353回蛍光体同学会講演会
- Place of Presentation
  化学会館ホール（東京都千代田区）
- Year and Date
  2014-06-06
- Invited
- Data Source
  KAKENHI-PROJECT-24226009
[Presentation] Development of properties and functionalities by precise control of rare earth doping2013
- Author(s)
  Y. Fujiwara and A. Koizumi
- Organizer
  17th International Conference on Crystal Growth and Epitaxy (ICCGE-17)
- Place of Presentation
  Warsaw, Poland
- Invited
- Data Source
  KAKENHI-PROJECT-24226009
[Presentation] Local-structure dependent energy transfer from the host to Eu ions in Eu-doped GaN2013
- Author(s)
  Y. Fujiwara, R. Wakamatsu, D. Lee, V. Dierolf, and A. Koizumi
- Organizer
  International Workshop on Luminescent Materials 2013 (LumiMat’13)
- Place of Presentation
  Kyoto, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-24226009
[Presentation] Recent progress in GaN-based red light-emitting diodes using Eu by organometallic vapor phase epitaxy2013
- Author(s)
  Y. Fujiwara, D. Lee, R. Wakamatsu, and A. Koizumi
- Organizer
  International Conference on Processing and Manufacturing of Advanced Materials (THERMEC’2013)
- Place of Presentation
  Las Vegas, USA
- Invited
- Data Source
  KAKENHI-PROJECT-24226009
[Presentation] 希土類元素を極める～希土類添加窒化物半導体から何が見えてくるか～2013
- Author(s)
  藤原康文、小泉淳
- Organizer
  第5回窒化物半導体結晶成長講演会
- Place of Presentation
  大阪大学吹田キャンパス、大阪府吹田市
- Invited
- Data Source
  KAKENHI-PROJECT-24226009
[Presentation] Eu-doped GaN and its application to nitride-based red light-emitting diodes2013
- Author(s)
  Y. Fujiwara and A. Koizumi
- Organizer
  Collaborative Conference on 3D & Materials Research (CC3DMR) 2013
- Place of Presentation
  Jeju, Korea
- Invited
- Data Source
  KAKENHI-PROJECT-24226009
[Presentation] Europium-doped gallium nitride and its application to environmentally-friendly red light-emitters
- Author(s)
  Y. Fujiwara, D. Timmerman, T. Kojima, and A. Koizumi
- Organizer
  1st International Symposium on Interactive Materials Science Cadet Program
- Place of Presentation
  Hotel Hankyu Expo Park, Osaka, Japan
- Year and Date
  2014-11-16 – 2014-11-19
- Invited
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] 希土類元素の精密ドーピングによる半導体光機能性の制御
- Author(s)
  藤原康文、Dolf Timmerman、児島貴徳、小泉淳
- Organizer
  第25回光物性研究会
- Place of Presentation
  神戸大学百年記念会館（神戸市）
- Year and Date
  2014-12-12 – 2014-12-13
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Optical and electrical properties of Eu,Si-codoped GaN grown by organometallic vapor-phase epitaxy
- Author(s)
  A. Koizumi, S. Kuwata, and Y. Fujiwara
- Organizer
  Energy Materials Nanotechnology Meeting, A31
- Place of Presentation
  Chengdu, China
- Year and Date
  2014-09-22 – 2014-09-25
- Invited
- Data Source
  KAKENHI-PROJECT-24226009
[Presentation] Low-temperature growth of Eu-doped GaN by organometallic vapor phase epitaxy
- Author(s)
  W. Zhu, D. Timmerman, B. Mitchell, A. Koizumi, and Y. Fujiwara
- Organizer
  2014 MRS Fall Meeting, Symposium T: Wide-Bandgap Materials for Solid-State Lighting and Power Electronics
- Place of Presentation
  Boston, USA
- Year and Date
  2014-11-30 – 2014-12-05
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] 希土類元素を極める ―希土類添加半導体から何が見えてくるのか―
- Author(s)
  藤原康文、児島孝徳、Dolf Timmerman、小泉淳
- Organizer
  日本金属学会2014年秋期講演大会
- Place of Presentation
  名古屋大学東山キャンパス（名古屋市千種区）
- Year and Date
  2014-09-24 – 2014-09-26
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Optical and electrical properties of Eu,Si-codoped GaN grown by organometallic vapor-phase epitaxy
- Author(s)
  A. Koizumi, S. Kuwata, and Y. Fujiwara
- Organizer
  Energy Materials Nanotechnology Open Access Week
- Place of Presentation
  Chengdu, China
- Year and Date
  2014-09-22 – 2014-09-25
- Invited
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Investigation of Energy Transfer Process in Eu-Doped GaN by Two-Wavelength Excited Photoluminescence
- Author(s)
  Kohei Okada, Ryuta Wakamatsu, Dolf Timmerman, Takanori Kojima, Atsushi Koizumi, and Yasufumi Fujiwara
- Organizer
  7th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials
- Place of Presentation
  Nagoya University, Nagoya, Japan
- Year and Date
  2015-03-26 – 2015-03-31
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Effects of impurity codoping on luminescence properties in Eu-doped GaN
- Author(s)
  Y. Fujiwara, D. Lee, A. Koizumi, B. Mitchell, and V. Dierolf
- Organizer
  5th International Workshop on Photoluminescence Rare Earths (PRE’14): Photonic Materials and Devices, I-2
- Place of Presentation
  San Sebastian, Spain
- Year and Date
  2014-05-14 – 2014-05-16
- Invited
- Data Source
  KAKENHI-PROJECT-24226009
[Presentation] Effects of impurity codoping on luminescence properties in Eu-doped GaN
- Author(s)
  Y. Fujiwara, D. Lee, A. Koizumi, B. Mitchell, and V. Dierolf
- Organizer
  5th International Workshop on Photoluminescence Rare Earths
- Place of Presentation
  San Sebastian, Spain
- Year and Date
  2014-05-14 – 2014-05-16
- Invited
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Growth and characterization of Eu-doped GaN by low-temperature organometallic vapor phase epitaxy
- Author(s)
  朱婉新、Timmerman Dolf、小泉淳、藤原康文
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス（札幌市）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Europium-doped gallium nitride and its application to environmentally-friendly red light-emitters
- Author(s)
  Y. Fujiwara, D. Timmerman, T. Kojima, and A. Koizumi
- Organizer
  1st International Symposium on Interactive Materials Science Cadet Program, IL7
- Place of Presentation
  Hotel Hankyu Expo Park, Osaka, Japan
- Year and Date
  2014-11-16 – 2014-11-19
- Invited
- Data Source
  KAKENHI-PROJECT-24226009
[Presentation] Eu site-dependent energy transfer in red light emitter of Eu-doped GaN
- Author(s)
  Y. Fujiwara, R. Wakamatsu, D. Lee, B. Mitchell, A. Koizumi, and V. Dierolf
- Organizer
  2014 MRS Fall Meeting, Symposium T: Wide-Bandgap Materials for Solid-State Lighting and Power Electronics, T4.05
- Place of Presentation
  Boston, USA
- Year and Date
  2014-11-30 – 2014-12-05
- Invited
- Data Source
  KAKENHI-PROJECT-24226009
[Presentation] 二波長励起PL測定によるEu添加GaNのエネルギー輸送効率の評価
- Author(s)
  岡田浩平、若松龍太、Dolf Timmerman、児島貴徳、小泉敦、藤原康文
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス（札幌市）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Eu,O共添加GaNにおけるトラップ準位のDLTS評価
- Author(s)
  重宗翼, 小泉淳, 児島貴徳, 藤原康文
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス（平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Eu-doped GaN and its application to environmentally-friendly red light-emitting diodes
- Author(s)
  Y. Fujiwara, D. Timmerman, T. Kojima, and A. Koizumi
- Organizer
  The second International Conference on Advanced Materials and Nanotechnology
- Place of Presentation
  Hanoi, Vietnam
- Year and Date
  2014-10-29 – 2014-11-01
- Invited
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] GaN:Eu赤色LEDの発光効率改善法：パルス駆動による注入電荷共振
- Author(s)
  石井真史, 小泉淳, 藤原康文
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス（平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] 希土類元素の精密ドーピングによる半導体光機能性の制御
- Author(s)
  藤原康文、Dolf Timmerman、児島貴徳、小泉淳
- Organizer
  第25回光物性研究会
- Place of Presentation
  神戸大学百年記念会館（神戸市）
- Year and Date
  2014-12-12 – 2014-12-13
- Invited
- Data Source
  KAKENHI-PROJECT-24226009
[Presentation] 希土類元素を極める ―希土類添加半導体から何が見えてくるのか―
- Author(s)
  藤原康文、児島孝徳、Dolf Timmerman、小泉淳
- Organizer
  日本金属学会2014年秋期講演大会公募シンポジウム「S3 エレクトロニクス薄膜材料の科学と技術 Ⅱ」、S3-8
- Place of Presentation
  名古屋大学東山キャンパス（名古屋市千種区）
- Year and Date
  2014-09-24 – 2014-09-26
- Invited
- Data Source
  KAKENHI-PROJECT-24226009
[Presentation] Formation of efficient Eu luminescent centers in Eu-doped GaN by low-temperature organometallic vapor phase epitaxy
- Author(s)
  W. Zhu, D. Timmerman, B. Mitchell, A. Koizumi, and Y. Fujiwara
- Organizer
  1st International Symposium on Interactive Materials Science Cadet Program
- Place of Presentation
  Hotel Hankyu Expo Park, Osaka, Japan
- Year and Date
  2014-11-16 – 2014-11-19
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Eu添加GaNにおけるZn,O共添加による新たなEu発光中心の形成
- Author(s)
  松田将明、朱婉新、児島貴徳、小泉淳、藤原康文
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス（札幌市）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Temperature dependence of photoconductivity in Eu-doped GaN
- Author(s)
  A. Koizumi, K. Okada, T. Shigemune, T. Kojima, and Y. Fujiwara
- Organizer
  2nd KANSAI Nanoscience and Nanotechnology
- Place of Presentation
  The Congres Convention Center, Osaka, Japan
- Year and Date
  2014-12-10 – 2014-12-11
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Eu-doped GaN and its application to environmentally-friendly red light-emitting diodes
- Author(s)
  Y. Fujiwara, D. Timmerman, T. Kojima, and A. Koizumi
- Organizer
  The second International Conference on Advanced Materials and Nanotechnology (ICAMN2014), IN04
- Place of Presentation
  Hanoi, Vietnam
- Year and Date
  2014-10-29 – 2014-11-01
- Invited
- Data Source
  KAKENHI-PROJECT-24226009
[Presentation] Strain-dependent energy transfer from GaN host to Eu ions in Eu-doped GaN
- Author(s)
  Y. Fujiwara, R. Wakamatsu, and A. Koizumi
- Organizer
  16th International Conference on High Pressure in Semiconductor Physics, Inv-8
- Place of Presentation
  Mexico City, Mexico
- Year and Date
  2014-08-06 – 2014-08-08
- Invited
- Data Source
  KAKENHI-PROJECT-24226009
[Presentation] Effects of oxygen codoping on Eu luminescence properties in Eu-doped GaN
- Author(s)
  J. Takatsu, M. Matsuda, T. Kojima, A. Koizumi, and Y. Fujiwara
- Organizer
  1st International Symposium on Interactive Materials Science Cadet Program
- Place of Presentation
  Hotel Hankyu Expo Park, Osaka, Japan
- Year and Date
  2014-11-16 – 2014-11-19
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] 希土類元素を極める　～Eu添加GaNから何が見えてきたか～
- Author(s)
  藤原康文，小泉淳，大渕博宣，本間徹生
- Organizer
  第17回XAFS討論会、2I-01
- Place of Presentation
  徳島大学総合科学部（徳島市）
- Year and Date
  2014-09-01 – 2014-09-03
- Invited
- Data Source
  KAKENHI-PROJECT-24226009
[Presentation] Eu site-dependent energy transfer in red light emitter of Eu-doped GaN
- Author(s)
  Y. Fujiwara, R. Wakamatsu, D. Lee, B. Mitchell, A. Koizumi, and V. Dierolf
- Organizer
  2014 MRS Fall Meeting, Symposium T: Wide-Bandgap Materials for Solid-State Lighting and Power Electronics
- Place of Presentation
  Boston, USA
- Year and Date
  2014-11-30 – 2014-12-05
- Data Source
  KAKENHI-PROJECT-26820113
[Presentation] Formation of a New Eu Luminescent Center by Zn,O-Codoping in Eu-Doped GaN
- Author(s)
  Masaaki Matsuda, Atsushi Koizumi, Takanori Kojima, Dolf Timmerman, Yasufumi Fujiwara
- Organizer
  7th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials
- Place of Presentation
  Nagoya University, Nagoya, Japan
- Year and Date
  2015-03-26 – 2015-03-31
- Data Source
  KAKENHI-PROJECT-26820113

1. FUJIWARA Yasufumi (10181421)

# of Collaborated Projects: 2 results

# of Collaborated Products: 56 results
2. 寺井慶和 (90360049)

# of Collaborated Projects: 2 results

# of Collaborated Products: 4 results
3. 吉田博 (30133929)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. 児島貴徳 (70725100)

# of Collaborated Projects: 1 results

# of Collaborated Products: 15 results
5. 石井真史

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results

KOIZUMI ATSUSHI 小泉 淳

Research Projects

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Co-Researchers

GaNに添加されたEuイオンのナノサイズ変調ドープによる高効率赤色発光素子の開発Principal Investigator

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Fabrication of highly efficient luminescence of rare-earth doped nitride semiconductors by control of local structures around rare-earth ionsPrincipal Investigator

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Development of bright red light-emitting devices by elucidation and control of light-emitting mechanism in rare-earth-doped nitride semiconductors

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赤色発光を示す希土類添加窒化物半導体におけるエネルギー輸送機構の解明

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[Book] Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics2016

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[Journal Article] Synthesis and Characterization of a Novel Liquid Eu Precursor EuCppm2 Allowing for the Control of the Eu Oxidation State Ratio in GaN Thin Films Grown by OMVPE2017

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[Journal Article] High-power Eu-doped GaN red LED based on a multilayer structure grown at lower temperatures by organometallic vapor phase epitaxy2017

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[Journal Article] Emission enhancement and its mechanism of Eu-doped GaN by strain engineering2017

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[Journal Article] Detection of In segregation in InGaN by using Eu as a probe2017

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[Journal Article] Surface morphology and optical properties of Eu3+ ions incorporated into N-polar GaN grown by organometallic vapor phase epitaxy2017

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[Journal Article] Control of GaN facet structures through Eu doping toward achieving semipolar {1-101} and {2-201} InGaN/GaN quantum wells2016

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[Journal Article] Optical and Electrical Study of Defects in GaN in situ doped with Eu3+ ion grown by OMVPE2016

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[Journal Article] Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity2016

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[Journal Article] Dimerization of emission centers in Eu-doped GaN red light-emitting diode: cooperative charge capturing using valence states coupling2016

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[Journal Article] Trapping of injection charges in emission centers of GaN:Eu red LED characterized with 1/f noise involved in forward current2016

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KOIZUMI ATSUSHI 小泉淳