Hara Shinsuke 原紳介

… Alternative Names

原紳介ハラシンスケ

HARA Shinsuke 原紳介

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Researcher Number	30434038
Affiliation (Current)	2023: 国立研究開発法人情報通信研究機構, 未来ICT研究所小金井フロンティア研究センター, 主任研究員
Affiliation (based on the past Project Information) *help	2022: 国立研究開発法人情報通信研究機構, 未来ICT研究所小金井フロンティア研究センター, 主任研究員 2016: 国立研究開発法人情報通信研究機構, 未来ICT研究所フロンティア創造総合研究室, 主任研究員 2015: 国立研究開発法人情報通信研究機構, 未来ICT研究所超高周波ICT研究室, 主任研究員 2014: 独立行政法人情報通信研究機構, 未来ICT研究所超高周波ICT研究室, 主任研究員 2010 – 2012: 東京理科大学, 基礎工学部, 助教
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Electron device/Electronic equipment Except Principal Investigator Electron device/Electronic equipment / Transformative Research Areas, Section (IV)
Keywords	Principal Investigator 電子デバイス / ヘテロ構造 / 結晶成長 / エピタキシャル成長 Except Principal Investigator III-VMOSFET / III-V族化合物半導体 / 量子補正モンテカルロシミュレーション / バリスティック伝導 / 量子輸送 / CMOS ロードマップ … More / III－VMOSFET / III－V族化合物半導体 / 歪バンド構造 / CMOSロードマップ / MOSFET / InGaAs / InP / 集積回路 / 高速アナログ回路 / 光電融合 Less

超高速シリコンアナログ回路と超高速光回路の融合
- Principal Investigator
  
  笠松章史
- Project Period (FY)
  2022 – 2026
- Research Category
  
  Grant-in-Aid for Transformative Research Areas (A)
- Review Section
  
  Transformative Research Areas, Section (IV)
- Research Institution
  National Institute of Information and Communications Technology
Research and development of complimentary high electron mobility transistor for next-generation information and communication technologyPrincipal Investigator
- Principal Investigator
  
  Hara Shinsuke
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
  Electron device/Electronic equipment
- Research Institution
  National Institute of Information and Communications Technology
Quantum Corrected Simulation of III-V MOSFETs
- Principal Investigator
  
  FUJISHIRO Hiroki
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo University of Science

All 2015 2013 2012 2011 2010

All Journal Article Presentation

[Journal Article] Comparative Study on Frequency Limits of Nanoscale HEMTs with Various Channel Materials2013
- Author(s)
  Y. Nagai, S. Nagai, J. Sato, S. Hara, H. I. Fujishiro,A. Endoh, I. Watanabe, and A. Kasamatsu
- Journal Title
  
  Proceedings of 25th International Conference on Indium Phosphide and Related Materials (IPRM2013)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Comparative Study on III-V Nanoscale DG MOSFETs with Various Channel Materials2013
- Author(s)
  A. Nishida, R. Ohama, S. Hara, and H. I. Fujishiro
- Journal Title
  
  Abstracts of 40th International Symposium on Compound Semiconductors (ISCS2013)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Comparative Study on Nano-Scale III-V MOSFETs with Various Channel Materials Using Quantum-Corrected Monte Carlo Simulation2012
- Author(s)
  T. Homma, K. Hasegawa, H. Watanabe, S.Haraand H. I. Fujishiro
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 9 Pages: 346-349
- DOI
  10.1002/pssc.201100275
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Analysis of Performances of InSb HEMTs Using Quantum-Corrected Monte Carlo Simulation2012
- Author(s)
  J. Sato, Y. Nagai, S. Hara, H. I. Fujishiro, A. Endoh, and I. Watanabe
- Journal Title
  
  Proceedings of 24th International Conference on Indium Phosphide and Related Materials (IPRM2012)
  
  Pages: 237-240
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] 量子補正モンテカルロ法による歪みInSb HEMTの遅延時間解析2012
- Author(s)
  永井佑太郎, 佐藤純, 原紳介, 藤代博記, 遠藤聡, 渡邊一世
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 112 Pages: 37-42
- NAID
  110009626392
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Quantum-Corrected Monte Carlo Simulation of InSb HEMTs Considering Strain Effects2011
- Author(s)
  S. Hara, F. Machida, J. Sato, H. I.Fujishiro, A. Endo, Y. Yamashita and I. Watanabe
- Journal Title
  
  Abstracts of 9th Topical Workshop on Heterostructure Microelectronics (TWHM2011)
  
  Pages: 41-42
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Impact of Electron Rebound from Drain on Drive Current in Nano-Scale InGaAs MOSFETs2011
- Author(s)
  H. I. Fujishiro, H. Watanabe, T. Homma and S. Hara
- Journal Title
  
  Proc. International Conference on Solid-State and Integrated Circuit Technology (ICSICT2010)
  
  Volume: 2 Pages: 1350-1352
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] 量子補正モンテカルロ法による歪みInAs HEMTの解析2011
- Author(s)
  佐藤純, 町田史晴, 原紳介, 藤代博記
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 111 Pages: 79-84
- NAID
  110008800765
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Comparative Study on Nano-Scale III-V MOSFETs with Various Channel Materials Using Quantum-Corrected Monte Carlo Simulation2011
- Author(s)
  T. Homma, K. Hasegawa, H. Watanabe, S.Haraand H. I. Fujishiro
- Journal Title
  
  Abstracts of 38th International Symposium on Compound Semiconductors (ISCS2011)
  
  Pages: 469-470
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Strain Effects on Performances in InAs HEMTs2011
- Author(s)
  F. Machida, H. Nishino, J. Sato, H. Watanabe, S. Haraand H. I. Fujishiro
- Journal Title
  
  Proceedings of 23rd International Conference on Indium Phosphide and Related Materials (IPRM2011)
  
  Pages: 437-440
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Monte Carlo Study of Strain Effect on High Field Electron Transport in InAs and InSb2011
- Author(s)
  H. Nishino, I. Kawahira, F. Machida, S. Haraand H. I. Fujishiro
- Journal Title
  
  Proceedings of 22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)
  
  Pages: 156-159
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Quantum-Corrected Monte Carlo Simulation of InSb HEMTs Considering Strain Effects2011
- Author(s)
  S.Hara, F.Machida, J.Sato, H.I.Fujishiro, A.Endo, Y.Yamashita, I.Watanabe
- Journal Title
  
  Abstracts of 9th Topical Workshop on Heterostructure Microelectronics (TWHM2011)
  
  Pages: 41-42
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Quantum-Corrected Monte Carlo Study of Nano-Scale InGaAs MOSFETs2011
- Author(s)
  H. Watanabe, T. Homma, T. Takegishi, Y. Hirasawa, Y. Hirata, S. Haraand H. I. Fujishiro
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 8 Pages: 306-309
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Comparative Study on Nano-Scale III-V MOSFETs with Various Channel Materials Using Quantum-Corrected Monte Carlo Simulation2011
- Author(s)
  T.Homma, K.Hasegawa, H. Watanabe, S.Hara, H.I.Fujishiro
- Journal Title
  
  Abstracts of 38th International Symposium on Compound Semiconductors (ISCS2011)
  
  Pages: 469-470
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Strain Effects on Performances in InAs HEMTs2011
- Author(s)
  F.Machida, H.Nishino, J.Sato, H.Watanabe, S. Hara, H. I. Fujishiro
- Journal Title
  
  Proceedings of 23rd International Conference on Indium Phosphide and Related Materials (IPRM2011)
  
  Pages: 437-440
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] InGaAs-ChannelMOSFETのキャリア輸送に関する理論的解析2011
- Author(s)
  本間嵩広,渡邉久巨,原紳介,藤代博記
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 110 Pages: 47-52
- NAID
  110007890036
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Impact of Electron Rebound from Drain on Drive Current in Nano-Scale InGaAs MOSFETs2010
- Author(s)
  H.I.Fujishiro, H.Watanabe, T.Homma, S.Hara
- Journal Title
  
  Proc.International Conference on Solid-State and Integrated Circuit Technology (ICSICT2010)
  
  Volume: 2 Pages: 1350-1352
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] InGaAs-Channel MOSFETのキャリア輸送に関する理論的解析2010
- Author(s)
  本間嵩広, 渡邉久巨, 原紳介, 藤代博記
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 110 Pages: 47-52
- NAID
  110007890036
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Monte Carlo Study of Strain Effect on High Field Electron Transport in InAs and InSb2010
- Author(s)
  H.Nishino, I.Kawahira, F.Machida, S.Hara, H.I.Fujishiro
- Journal Title
  
  Proceedings of 22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)
  
  Pages: 156-159
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InGaSbヘテロエピタキシャル薄膜の膜質評価2015
- Author(s)
  原紳介,渡邊一世,竹鶴達哉,辻大介,藤川紗千恵,藤代博記,赤羽浩一,笠松章史
- Organizer
  第76回秋季応用物理学会学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県・名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26870910
[Presentation] Comparative Study on Frequency Limits of Nanoscale HEMTs with Various Channel Materials2013
- Author(s)
  Y. Nagai, S. Nagai, J. Sato, S. Hara, H. I. Fujishiro,A. Endoh, I. Watanabe,and A. Kasamatsu
- Organizer
  25th International Conference on Indium Phosphide and Related Materials (IPRM2013)
- Place of Presentation
  神戸
- Year and Date
  2013-05-23
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Comparative Study on III-V Nanoscale DG MOSFETs with Various Channel Materials2013
- Author(s)
  A. Nishida, R. Ohama, S. Hara, and H. I. Fujishiro
- Organizer
  40th International Symposium on Compound Semiconductors (ISCS2013)
- Place of Presentation
  神戸
- Year and Date
  2013-05-20
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] III-V DG-MOSFET の駆動電流に及ぼすソース/ドレイン形状の影響に関する理論的解析2012
- Author(s)
  長谷川慶,西田明央,原紳介,藤代博記
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学
- Year and Date
  2012-09-11
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InGaAs DG-MOSFETの駆動電流に及ぼすソース/ドレイン拡張領域の影響の解析2012
- Author(s)
  西田明央,長谷川慶,原紳介,藤代博記
- Organizer
  電子情報通信学会ソサイエティ大会
- Place of Presentation
  富山大学
- Year and Date
  2012-09-11
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InSb HEMT のデバイス特性に及ぼすラフネス散乱の影響2012
- Author(s)
  佐藤純,荒井敦志,町田史晴,原紳介,藤代博記,遠藤聡,渡邊一世
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 量子補正モンテカルロ法による歪み InSb HEMT の遅延時間解析2012
- Author(s)
  永井佑太郎, 佐藤純, 原紳介, 藤代博記, 遠藤聡, 渡邊一世
- Organizer
  電子情報通信学会 ED 研究会
- Place of Presentation
  福井大学
- Year and Date
  2012-07-26
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Analysis of Performances of InSb HEMTs Using Quantum-Corrected Monte Carlo Simulation2012
- Author(s)
  J. Sato, Y. Nagai, S. Hara, H. I. Fujishiro, A. Endoh, and I. Watanabe
- Organizer
  24th International Conference on Indium Phosphide and Related Materials (IPRM2012)
- Place of Presentation
  University of California Santa Barbara, USA.
- Year and Date
  2012-08-27
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InSb HEMTのデバイス特性に及ぼすラフネス散乱の影響2012
- Author(s)
  佐藤純, 荒井敦志, 町田史晴, 原紳介, 藤代博記, 遠藤聡, 渡邊一世
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 歪みInSb HEMTのモンテカルロ解析2011
- Author(s)
  町田史晴,佐藤純,原紳介,藤代博記,遠藤聡,渡邊一世
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Year and Date
  2011-08-29
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Comparative Study on Nano-Scale III-V MOSFETs witn Various Channel Materials Using Quantum-Corrected Monte Carlo Simulation2011
- Author(s)
  T.Homma, K.Hasegawa, H.Watanabe, S.Hara, H.I.Fujishiro
- Organizer
  38th International Symposium on Compound Semiconductors (ISCS2011)
- Place of Presentation
  Maritim proArte Hotel, Berlin, Geriany
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Quantum-Corrected Monte Carlo Simulation of InSb HEMTs Considering Strain Effects2011
- Author(s)
  S. Hara, F. Machida, J. Sato, H. I.Fujishiro, A. Endo, Y. Yamashita and I. Watanabe
- Organizer
  9th Topical Workshop on Heterostructure Microelectronics (TWHM2011)
- Place of Presentation
  Nagaragawa Convention Center, Gifu.
- Year and Date
  2011-08-28
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InAs HEMTの歪効果に関する理論的研究2011
- Author(s)
  佐藤純, 町田史晴, 西野啓之, 原紳介, 藤代博記
- Organizer
  電子情報通信学会総合大会
- Place of Presentation
  東京都市大学(但し震災によりDVDのみによる発表)
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InAs HEMTの歪効果に関するモンテカルロ解析2011
- Author(s)
  町田史晴, 佐藤純, 西野啓之, 原紳介, 藤代博記
- Organizer
  応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大(但し震災によりDVDのみによる発表)
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 量子補正モンテカルロ法による歪みInAs HEMTの解析2011
- Author(s)
  佐藤純, 町田史晴, 原紳介, 藤代博記
- Organizer
  電子情報通信学会ED研究会
- Place of Presentation
  長岡技術科学大学
- Year and Date
  2011-07-29
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Comparative Study on Nano-Scale III-V MOSFETs with Various Channel Materials Using Quantum-Corrected Monte Carlo Simulation2011
- Author(s)
  T. Homma, K. Hasegawa, H. Watanabe, S.Haraand H. I. Fujishiro
- Organizer
  38th International Symposium on Compound Semiconductors (ISCS2011)
- Place of Presentation
  Berlin, Germany
- Year and Date
  2011-05-22
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 量子補正モンテカルロ法による歪みInAs HEMTの解析2011
- Author(s)
  佐藤純, 町田史晴, 原紳介, 藤代博記
- Organizer
  電子情報通信学会ED研究会
- Place of Presentation
  長岡技術科学大学マルチメディアシステムセンター
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 各種チャネル材料を用いた微細III-V MOSFETの特性比較2011
- Author(s)
  長谷川慶,本間嵩広,原紳介,藤代博記
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学.
- Year and Date
  2011-08-29
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InAs HEMTの歪効果に関する理論的研究2011
- Author(s)
  佐藤純,町田史晴,西野啓之,原紳介,藤代博記
- Organizer
  電子情報通信学会総合大会
- Place of Presentation
  東京都市大
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InAs HEMTの歪効果に関するモンテカルロ解析2011
- Author(s)
  町田史晴,佐藤純,西野啓之,原紳介,藤代博記
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Quantum-Corrected Monte Carlo Simulation of InSb HEMTs Considering Strain Effects2011
- Author(s)
  S.Hara, F.Machida, J Sato, H.I.Fujishiro, H.Endo, Y.Yamashita, I.Watanabe
- Organizer
  9th Topical Workshop on Heterostructure Microelectronics (TWHM2011)
- Place of Presentation
  Nagaragawa Convention Center, Gifu, Japan
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Strain Effects on Performances in InAs HEMTs2011
- Author(s)
  F.Machida, H.Nishino, J.Sato, H.Watanabe, S.Hara, H.I.Fujishiro
- Organizer
  23rd International Conference on Indium Phosphide and Related Materials (IPRM2011)
- Place of Presentation
  Maritim proArte Hotel, Berlin, Germany
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Strain Effects on Performances in InAs HEMTs2011
- Author(s)
  F. Machida, H. Nishino, J. Sato. H. Watanabe, S. Haraand H. I. Fujishiro
- Organizer
  23rd International Conference on Indium Phosphide and Related Materials (IPRM2011)
- Place of Presentation
  Berlin, Germany.
- Year and Date
  2011-05-22
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 各種チャネル材料を用いた微細III-V MOSFETの特性比較2011
- Author(s)
  長谷川慶, 本間嵩広, 原紳介, 藤代博記
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 歪みInSb HEMTのモンテカルロ解析2011
- Author(s)
  町田史晴, 佐藤純, 原紳介, 藤代博記, 遠藤聡, 渡邊一世
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InGaAs MOSFETの駆動電流に及ぼす電子後方散乱の影響の解析2010
- Author(s)
  本間嵩広, 渡邉久巨, 原紳介, 藤代博記
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Monte Carlo Study of Strain Effect on High Field Electron Transport in InAs and InSb2010
- Author(s)
  H.Nishino, I.Kawahira, F.Machida, S.Hara, H.I.Fujishira
- Organizer
  22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)
- Place of Presentation
  Takamatsu Symbol Tower, Kagawa, Japan
- Year and Date
  2010-06-02
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InGaAs MOSFETの駆動電流に及ぼす電子後方散乱の影響の解析2010
- Author(s)
  本間嵩広,渡邉久巨,原紳介,藤代博記
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学.
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Impact of Electron Rebound from Drain on Drive Current in Nano-Scale InGaAs MOSFETs2010
- Author(s)
  H. I. Fujishiro, H. Watanabe, T. Homma and S. Hara
- Organizer
  International Conference on Solid-State and Integrated Circuit Technology (ICSICT2010)
- Place of Presentation
  Shanghai, China.
- Year and Date
  2010-11-03
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InGaAs-ChannelMOSFETのキャリア輸送に関する理論的解析2010
- Author(s)
  本間嵩広,渡邉久巨,原紳介,藤代博記
- Organizer
  電子情報通信学会ED研究会
- Place of Presentation
  北陸先端科学技術大学院大学.
- Year and Date
  2010-06-18
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InGaAs-Channel MOSFETのキャリア輸送に関する理論的解析2010
- Author(s)
  本間嵩広, 渡邉久巨, 原紳介, 藤代博記
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  北陸先端科学技術大学院大学
- Year and Date
  2010-06-18
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 格子整合系歪みInAs HEMTのモンテカルロ解析2010
- Author(s)
  町田史晴, 西野啓之, 原紳介, 藤代博記
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InGaAs MOSFETの駆動電流に及ぼす電子後方散乱の理論的解析2010
- Author(s)
  渡邉久巨,本間嵩広,原紳介,藤代博記
- Organizer
  電子情報通信学会ソサイエティ大会
- Place of Presentation
  大阪府立大学
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Quantum-Corrected Monte Carlo Study of Nano-Scale InGaAs MOSFETs2010
- Author(s)
  H.Watanabe, T.Homma, T.Takegishi, Y.Hirasawa, Y.Hirata, S.Hara, H.I.Fujishiro
- Organizer
  37th International Symposium on Compound Semiconductors (ISCS2010)
- Place of Presentation
  Takamatsu Symbol Tower, Kagawa, Japan
- Year and Date
  2010-06-01
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Monte Carlo Study of Strain Effect on High Field Electron Transport in InAs and InSb2010
- Author(s)
  H. Nishino, I. Kawahira, F. Machida, S. Haraand H. I. Fujishiro
- Organizer
  22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)
- Place of Presentation
  Kagawa.
- Year and Date
  2010-06-02
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 格子整合系歪みInAs HEMTのモンテカルロ解析2010
- Author(s)
  町田史晴,西野啓之,原紳介,藤代博記
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Impact of Electron Rebound from Drain on Drive Current in Nano-Scale InGaAs MOSFETs2010
- Author(s)
  H.I.Fujishiro, H.Watanabe, T.Homma, S.Hara
- Organizer
  International Conference on Solid-State and Integrated Circuit Technology (ICSICT2010)
- Place of Presentation
  InterContinental Hotel, Shanghai, China
- Year and Date
  2010-11-03
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Quantum-Corrected Monte Carlo Study of Nano-Scale InGaAs MOSFETs2010
- Author(s)
  H. Watanabe, T. Homma, T. Takegishi, Y. Hirasawa, Y. Hirata, S. Haraand H. I. Fujishiro
- Organizer
  37th International Symposium on Compound Semiconductors (ISCS2010)
- Place of Presentation
  Kagawa.
- Year and Date
  2010-06-01
- Data Source
  KAKENHI-PROJECT-22560346

1. FUJISHIRO Hiroki (60339132)

# of Collaborated Projects: 1 results

# of Collaborated Products: 55 results
2. 笠松章史 (30296884)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. 関根かをり (40282834)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Hara Shinsuke 原 紳介

原 紳介 ハラ シンスケ

HARA Shinsuke 原 紳介

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超高速シリコンアナログ回路と超高速光回路の融合

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Research and development of complimentary high electron mobility transistor for next-generation information and communication technologyPrincipal Investigator

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Quantum Corrected Simulation of III-V MOSFETs

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[Journal Article] Comparative Study on Frequency Limits of Nanoscale HEMTs with Various Channel Materials2013

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[Journal Article] Comparative Study on III-V Nanoscale DG MOSFETs with Various Channel Materials2013

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[Journal Article] Comparative Study on Nano-Scale III-V MOSFETs with Various Channel Materials Using Quantum-Corrected Monte Carlo Simulation2012

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[Journal Article] Analysis of Performances of InSb HEMTs Using Quantum-Corrected Monte Carlo Simulation2012

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[Journal Article] 量子補正モンテカルロ法による歪みInSb HEMTの遅延時間解析2012

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NAID

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[Journal Article] Quantum-Corrected Monte Carlo Simulation of InSb HEMTs Considering Strain Effects2011

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[Journal Article] Impact of Electron Rebound from Drain on Drive Current in Nano-Scale InGaAs MOSFETs2011

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[Journal Article] 量子補正モンテカルロ法による歪みInAs HEMTの解析2011

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NAID

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[Journal Article] Comparative Study on Nano-Scale III-V MOSFETs with Various Channel Materials Using Quantum-Corrected Monte Carlo Simulation2011

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[Journal Article] Strain Effects on Performances in InAs HEMTs2011

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[Journal Article] Monte Carlo Study of Strain Effect on High Field Electron Transport in InAs and InSb2011

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[Journal Article] Quantum-Corrected Monte Carlo Simulation of InSb HEMTs Considering Strain Effects2011

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[Journal Article] Quantum-Corrected Monte Carlo Study of Nano-Scale InGaAs MOSFETs2011

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[Journal Article] Comparative Study on Nano-Scale III-V MOSFETs with Various Channel Materials Using Quantum-Corrected Monte Carlo Simulation2011

Hara Shinsuke 原紳介

原紳介ハラシンスケ

HARA Shinsuke 原紳介