Taguchi Hirohisa 田口博久

… Alternative Names

田口博久タグチヒロヒサ

TAGUCHI Hirohisa 田口博久

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Researcher Number	30453830
Other IDs
Affiliation (Current)	2023: 中京大学, 工学部, 教授
Affiliation (based on the past Project Information) *help	2019 – 2020: 中京大学, 工学部, 教授 2018: 中京大学, 工学部, 准教授 2011: 中京大学, 情報理工学部, 准教授 2009 – 2010: 東京理科大学, 基礎工学部, 助教
Review Section/Research Field	Except Principal Investigator Electron device/Electronic equipment / Basic Section 21060:Electron device and electronic equipment-related
Keywords	Except Principal Investigator 電子デバイス / 集積回路 / 光検出デバイス / III-V化合物半導体 / 超高速応答 / Auger再結合 / 液体金属 / 低温実装 / はんだ接合部 / パワーモジュール … More / 高機能半導体 / 接合部 / 半導体 / 熱疲労破壊 / はんだ接合 Less

Creation of a solder joint using a liquid metal, which can be assembled at a low temperature and does not have a thermal fatigue.
- Principal Investigator
  
  Yamanaka Kimihiro
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Chukyo University
Ultra-high speed opto-electronic devices
- Principal Investigator
  
  TAKANASHI Yoshifumi
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo University of Science

All 2020 2019 2018 2012 2011 2010 2009

All Journal Article Presentation

[Journal Article] Characteristics of PHEMTs and MSM photodetectors simultaneously fabricated on same epitaxial wafer with In0.75Ga0.25As/InGaAs channel layer2012
- Author(s)
  Yuta Koreeda, Yutaka Endo, Kouichi Sato, Kenya Yoshizawa, Yui Nishio, Hirohisa Taguchi, Tsutomu Iida and Yoshifumi Takanashi
- Journal Title
  
  PHYSICA STATUS SOLIDI(C)
  
  Volume: 9 Pages: 357-360
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560365
[Journal Article] Thermoelectric Behavior of Sb-and Al-Doped n-Type Mg2Si Device Under Large Temperature Differences2011
- Author(s)
  T. Sakamoto, T. Iida, S. Kurosaki, K. Yano, H. Taguchi, K. Nishio, and Y. Takanashi
- Journal Title
  
  JOURNAL OF ELECTRONIC MATERIALS
  
  Volume: 40 Pages: 629-634
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560365
[Journal Article] Ultrafast Optical Response of InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors2010
- Author(s)
  田口博久
- Journal Title
  
  JAPANESE JOURNAL OF APPLIED PHYSICS
  
  Volume: 6
- NAID
  210000068263
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560365
[Journal Article] Thermoelectric characteristics of commercialized Mg2Si source doped with Al, Bi, Ag and Cu2010
- Author(s)
  T. Sakamoto, T. Iida, J. Sato, A. Matsumoto, Y. Honda, T. Nemoto, J. Sato, T. Nakajima, H. Taguchi, and Y. Takanashi
- Journal Title
  
  JOURNAL OF ELECTRONIC MATERIALS
  
  Volume: 39 Pages: 1708-1713
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560365
[Journal Article] Direct thermal-to-electric energy conversion material of environmentally-benign Mg2Si synthesized using wasted Si sludge and recycled Mg alloy2010
- Author(s)
  Y. Honda, T. Iida, T. Sakamoto, S. Sakuragi, Y. Taguchi, Y. Mito, T. Nemoto, T. Nakajima, H. Taguchi, K. Nishio, and Y. Takanashi
- Journal Title
  
  Mater. Res. Soc. Proc.
  
  Volume: Vol.1218 Pages: 1218-1218
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560365
[Journal Article] Characteristics of a pin-fin structure thermal-to-electric uni-leg device using a commercial n-type Mg2Si source2010
- Author(s)
  T. Nemoto, T. Iida, J. Sato, Y. Oguni, A. Matsumoto, T. Miyata, T. Sakamoto, T. Nakajima, H. Taguchi, K. Nishio, and Y. Takanashi
- Journal Title
  
  JOURNAL OF ELECTRONIC MATERIALS
  
  Volume: 39 Pages: 1572-1578
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560365
[Journal Article] Dependence of Optical Response Time on Gate-to-Source Voltage for InAlAs/InAs/InGaAs Pseudomorphic High Electron2010
- Author(s)
  Takahisa Ando, Hirohisa Taguchi, Kazuya Uchimura, Miho Mochiduki, Tsutomu Iida and Yoshifumi Takanashi
- Journal Title
  
  Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials
  
  Pages: 856-857
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560365
[Journal Article] Ultrafast Optical Response of InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors2010
- Author(s)
  Hirohisa Taguchi, Yasuyuki Oishi, Takahisa Ando, Kazuya Uchimura, Miho Mochiduki, Mitsuhiro Enomoto, Tsutomu Iida, and Yoshifumi Takanashi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 49
- NAID
  210000068263
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560365
[Journal Article] Ultra-Fast Optical Response by InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors2009
- Author(s)
  Hirohisa Taguchi, Yasuyuki Oishi, Takahisa Ando, Kazuya Uchimura, Miho Mochiduki, Mitsuhiro Enomoto, Tsutomu Iida and Yoshifumi Takanashi
- Journal Title
  
  Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials
  
  Pages: 946-947
- NAID
  210000068263
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560365
[Journal Article] InAlAs/InAs/InGaAs pseudomorphic high electron mobility transistors exhibiting ultra-fast optical response2009
- Author(s)
  Hirohisa Taguchi, Nobuhito Wakimura, Yugo Nakagawa, Tsutomu Iida, and Yoshifumi Takanashi
- Journal Title
  
  Physica status solidi
  
  Volume: (c) 6 Pages: 1386-1389
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560365
[Journal Article] Thermoelectric properties of Sb-doped sintered Mg2Si fabricated using commercial polycrystalline sources2009
- Author(s)
  N. Fukushima, T. Iida, M. Akasaka, T. Nemoto, T. Sakamoto, R. Kobayashi, H. Taguchi, K. Nishio and Y. Takanashi
- Journal Title
  
  Res. Soc. Proc.
  
  Volume: 1166
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560365
[Journal Article] Materials Research Society Symposium Proceedings 11082009
- Author(s)
  Nobuhito Wakimura, Yugo Nakagawa, Hirohisa Taguchi, Tsutomu Iida, and Yoshifumi Takanashi
- Volume
  1108
- Pages
  2-8
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560365
[Journal Article] InAlAs/InAs/InGaAs pseudomorphic high electron mobility transistors exhibiting ultra-fast optical response2009
- Author(s)
  田口博久
- Journal Title
  
  Phisica stetus solidi(c) 6
  
  Pages: 1386-1389
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560365
[Journal Article] Ultra-Fast Optical Response by InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors2009
- Author(s)
  田口博久
- Journal Title
  
  Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials
  
  Pages: 946-947
- NAID
  210000068263
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560365
[Presentation] Al-Zn合金板とFe板との間に発生した微細Cuデンドライト結晶薄膜形成2020
- Author(s)
  田邉ほの香，重盛陽平，和田郁海，，山中公博、田口博久
- Organizer
  エレクトロニクス実装学会第30回マイクロエレクトロニクスシンポジウム
- Data Source
  KAKENHI-PROJECT-18K04272
[Presentation] 低温実装を実現する液体金属Gaの電気抵抗の温度特性2020
- Author(s)
  牧田和也，福澤拓郎，鈴木究，田口博久，山中公博
- Organizer
  スマートプロセス学会26th Symposium on Microjoining and Assembly Technology in Electronics
- Data Source
  KAKENHI-PROJECT-18K04272
[Presentation] 液体金属Gaによる低温接合について2020
- Author(s)
  鈴木究，田口博久，山中公博
- Organizer
  応用物理学会関西支部2019年度第3回講演会
- Data Source
  KAKENHI-PROJECT-18K04272
[Presentation] 低温接合を実現する液体金属Gaと電極材の界面反応2019
- Author(s)
  鈴木究，福澤拓郎，田口博久，山中公博
- Organizer
  エレクトロニクス実装学会第29回マイクロエレクトロニクスシンポジウム,（研究奨励賞）
- Data Source
  KAKENHI-PROJECT-18K04272
[Presentation] Formation of Cu microparticles and its application to printed electronics2018
- Author(s)
  Junya Kuroda, Risa Uda, Honoka Tanabe, Kimihiro Yamanaka, and Hirohisa Taguchi
- Organizer
  European Material Research Society, 2018 Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04272
[Presentation] 高純度Cuデンドライト結晶を利用したCuマイクロ粒子の生成と伝導性塗料の開発2018
- Author(s)
  田邉ほの香、黒田純也、宇田里紗、山中公博、田口博久
- Organizer
  エレクロニクス実装学会第28回マイクロエレクトロニクスシンポジウム
- Data Source
  KAKENHI-PROJECT-18K04272
[Presentation] Formation and Mechanism of Cu Dendrite Crystal Thin Films by an Electrochemical Metal Deposition Method2018
- Author(s)
  Risa Uda, Junya Kuroda, Kimihiro Yamanaka, and Hirohisa Taguchi
- Organizer
  European Material Research Society, 2018 Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04272
[Presentation] In0.75Ga0.25As/In0.53Ga0.47As同一基板上に作製したPHEMTの周波数特性2011
- Author(s)
  山崎陽一、是枝勇太、西尾結、遠藤裕、佐藤宏一、芳沢研哉、田口博久、高梨良文
- Organizer
  第72回応報物理学会学術講演会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-21560365
[Presentation] Characteristics of PHEMTs and MSM photodetectors simultaneously fabricated on the same epitaxial wafer with In0.75Ga0.25As/InGaAs channel layer2011
- Author(s)
  Hirohisa Taguchi, Yuta koreeda, Yutaka Endo, kouichi Sato, Kenya Yoshizawa, Yui Nishio, Tsutomu Iida and Yoshifumi Takanashi
- Organizer
  38th International Symposium on Compound Semiconductors-ISCS
- Place of Presentation
  Berlin
- Data Source
  KAKENHI-PROJECT-21560365
[Presentation] In0.75Ga0.25As/In0.53Ga0.47As同一基板上に作製したPMSM-PDの応答特性2011
- Author(s)
  西尾結、是枝勇太、山崎陽一、渡邉亮、田口博久、高梨良文
- Organizer
  第72回応報物理学会学術講演会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-21560365
[Presentation] Characteristics of PHEMTs and MSM photodetectors simultaneously fabricated on same epitaxial wafer with In0.75Ga0.25As/InGaAs2011
- Author(s)
  田口博久
- Organizer
  38th International Symposium on Compound Semiconductors-ISCS 2011
- Place of Presentation
  ベルリン(ドイツ)
- Year and Date
  2011-05-24
- Data Source
  KAKENHI-PROJECT-21560365
[Presentation] InAlAs/InAs/OnGaAs-PHEMTの直流及び高周波特性2010
- Author(s)
  遠藤裕、安藤貴寿、是枝勇太、佐藤宏一、吉澤研哉、田口博久、高梨良文
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Data Source
  KAKENHI-PROJECT-21560365
[Presentation] Dependence of Optical Response Time on Gate-to-Source Voltage for InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors2010
- Author(s)
  Takahisa Ando, Hirohisa Taguchi, Kazuya Uchimura, Miho Mochiduki, Tsutomu Iida and Yoshifumi Takanashi
- Organizer
  2010 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tokyo Univ.
- Data Source
  KAKENHI-PROJECT-21560365
[Presentation] InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistorsのゲートソース間電圧による光応答時間の依存性2010
- Author(s)
  是枝勇太、安藤貴寿、遠藤裕、佐藤宏一、吉澤研哉、田口博久、高梨良文
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Data Source
  KAKENHI-PROJECT-21560365
[Presentation] Ultra-Fast Optical Response by InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors2009
- Author(s)
  田口博久
- Organizer
  The 2009 International Conference on Solid State Devices and Materials
- Place of Presentation
  仙台国際ホテル
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-21560365

1. TAKANASHI Yoshifumi (30318224)

# of Collaborated Projects: 1 results

# of Collaborated Products: 17 results
2. Yamanaka Kimihiro (50609229)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results

Taguchi Hirohisa 田口 博久

田口 博久 タグチ ヒロヒサ

TAGUCHI Hirohisa 田口 博久

Research Projects

Research Products

Co-Researchers

Creation of a solder joint using a liquid metal, which can be assembled at a low temperature and does not have a thermal fatigue.

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Ultra-high speed opto-electronic devices

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Characteristics of PHEMTs and MSM photodetectors simultaneously fabricated on same epitaxial wafer with In0.75Ga0.25As/InGaAs channel layer2012

Author(s)

Journal Title

Data Source

[Journal Article] Thermoelectric Behavior of Sb-and Al-Doped n-Type Mg2Si Device Under Large Temperature Differences2011

Author(s)

Journal Title

Data Source

[Journal Article] Ultrafast Optical Response of InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors2010

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Thermoelectric characteristics of commercialized Mg2Si source doped with Al, Bi, Ag and Cu2010

Author(s)

Journal Title

Data Source

[Journal Article] Direct thermal-to-electric energy conversion material of environmentally-benign Mg2Si synthesized using wasted Si sludge and recycled Mg alloy2010

Author(s)

Journal Title

Data Source

[Journal Article] Characteristics of a pin-fin structure thermal-to-electric uni-leg device using a commercial n-type Mg2Si source2010

Author(s)

Journal Title

Data Source

[Journal Article] Dependence of Optical Response Time on Gate-to-Source Voltage for InAlAs/InAs/InGaAs Pseudomorphic High Electron2010

Author(s)

Journal Title

Data Source

[Journal Article] Ultrafast Optical Response of InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors2010

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Ultra-Fast Optical Response by InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors2009

Author(s)

Journal Title

NAID

Data Source

[Journal Article] InAlAs/InAs/InGaAs pseudomorphic high electron mobility transistors exhibiting ultra-fast optical response2009

Author(s)

Journal Title

Data Source

[Journal Article] Thermoelectric properties of Sb-doped sintered Mg2Si fabricated using commercial polycrystalline sources2009

Author(s)

Journal Title

Data Source

[Journal Article] Materials Research Society Symposium Proceedings 11082009

Author(s)

Volume

Pages

Data Source

[Journal Article] InAlAs/InAs/InGaAs pseudomorphic high electron mobility transistors exhibiting ultra-fast optical response2009

Author(s)

Journal Title

Data Source

[Journal Article] Ultra-Fast Optical Response by InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors2009

Author(s)

Journal Title

NAID

Data Source

[Presentation] Al-Zn合金板とFe板との間に発生した微細Cuデンドライト結晶薄膜形成2020

Taguchi Hirohisa 田口博久

田口博久タグチヒロヒサ

TAGUCHI Hirohisa 田口博久