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furuta jun  古田 潤

ORCIDConnect your ORCID iD *help
Researcher Number 30735767
Affiliation *help 2016 – 2017 : 京都工芸繊維大学, 電気電子工学系, 助教
2015 : 京都工芸繊維大学, グリーンイノベーションセンター, 特任助教
2014 – 2015 : 京都工芸繊維大学, 学内共同利用施設等, 助教
2014 : 京都工芸繊維大学, 電気電子工学系, 助教
Review Section/Research Field
Principal Investigator
Electron device/Electronic equipment
Except Principal Investigator
Computer system
Keywords
Principal Investigator
フリップフロップ / ソフトエラー / 中性子 / 低電力 / FD-SOI / 完全空乏型トランジスタ / 重イオン
Except Principal Investigator
経年劣化 / ランダムテレグラフノイズ / パワエレ … More / IoT / 一時故障 / スタックトランジスタ / ソフトエラー / FDSOI / BTI / バルク / 永久故障 Less
  • Research Projects

    (3results)
  • Research Products

    (15results)
  • Co-Researchers

    (4People)
  •  低電力スーパーコンピュータの高信頼性設計法の提案Principal InvestigatorOngoing

    • Principal Investigator
      古田 潤
    • Project Period (FY)
      2017 – 2019
    • Research Category
      Grant-in-Aid for Young Scientists (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Kyoto Institute of Technology
  •  高効率かつ高信頼で長時間動作可能な「もの」のインターネット機器の実現Ongoing

    • Principal Investigator
      小林 和淑
    • Project Period (FY)
      2015 – 2018
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Computer system
    • Research Institution
      Kyoto Institute of Technology
  •  Low Power/delay Radiation-hardended Flip-flop in a FD-SOI proessPrincipal Investigator

    • Principal Investigator
      furuta jun
    • Project Period (FY)
      2014 – 2015
    • Research Category
      Grant-in-Aid for Research Activity start-up
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Kyoto Institute of Technology

All 2016 2015

All Journal Article Presentation

  • [Journal Article] A Radiation-Hardened Non-redundant Flip-Flop, Stacked Leveling Critical Charge Flip-Flop in a 65 nm Thin BOX FD-SOI Process2016

    • Author(s)
      Jun Furuta, Junki Yamaguchi, Kazutoshi Kobayashi
    • Journal Title

      IEEE Transactions on Neuclear Science

      Volume : 1 Pages : 1-1

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26889037
  • [Journal Article] A Radiation-Hardened Non-Redundant Flip-Flop, Stacked Leveling Critical Charge Flip-Flop in a 65 nm Thin BOX FD-SOI Process2016

    • Author(s)
      J. Furuta, J. Yamaguchi, and K. Kobayashi
    • Journal Title

      IEEE Trans. on Nuclear Science

      Volume : 63 Pages : 2080-2086

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H02677
  • [Journal Article] Impact of Cell Distance and Well-contact Density on Neutron-induced Multiple Cell Upsets2015

    • Author(s)
      古田, 小林, 小野寺
    • Journal Title

      IEICE Trans. on Electronics

      Volume : E98-C Pages : 1745-1353

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H02677
  • [Presentation] A Non-Redundant Low-Power Flip Flop with Stacked Transistors in a 65 nm Thin BOX FDSOI Process2016

    • Author(s)
      H. Maruoka, M. Hifumi, J. Furuta, and K. Kobayashi
    • Organizer
      The conference on Radiation and its Effects on Components and Systems
    • Place of Presentation
      Bremen, Germany
    • Year and Date
      2016-09-19
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02677
  • [Presentation] A Radiation-hard Layout Structure to Control Back-Gate Biases in a 65 nm Thin-BOX FDSOI Process2016

    • Author(s)
      J. Yamaguchi, J. Furuta, and K. Kobayashi
    • Organizer
      SOI-3D-Subthreshold Microelectronics Technology Unified Conference
    • Place of Presentation
      Burlingame, CA, USA
    • Year and Date
      2016-10-10
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02677
  • [Presentation] 28 nm UTBB FD-SOIプロセスにおけるα線照射による低電圧動作時のFFのソフトエラー耐性評価2015

    • Author(s)
      一二三潤, 曽根崎詠二, 山口潤己, 古田潤, 小林和淑
    • Organizer
      DAシンポジウム
    • Place of Presentation
      石川県加賀市
    • Year and Date
      2015-08-26
    • Data Source
      KAKENHI-PROJECT-26889037
  • [Presentation] 65nmFD-SOIプロセスにおける非冗長化耐ソフトエラーフリップフロップのエラー耐性評価2015

    • Author(s)
      山口潤己, 古田潤, 小林和淑
    • Organizer
      DAシンポジウム
    • Place of Presentation
      石川県加賀市
    • Year and Date
      2015-08-26
    • Data Source
      KAKENHI-PROJECT-26889037
  • [Presentation] 65nm薄膜FD-SOIとバルクプロセスにおけるアンテナダイオード起因ソフトエラーの実測と評価2015

    • Author(s)
      曽根崎詠二, 古田潤, 小林和淑
    • Organizer
      DAシンポジウム
    • Place of Presentation
      石川県加賀市
    • Year and Date
      2015-08-26
    • Data Source
      KAKENHI-PROJECT-26889037
  • [Presentation] 28 nm UTBB FD-SOIプロセスにおけるデバイスシミュレーションによるのソフトエラー耐性の評価2015

    • Author(s)
      梅原成宏, 張魁元, 一二三潤, 古田潤, 小林和淑
    • Organizer
      DAシンポジウム
    • Place of Presentation
      石川県加賀市
    • Year and Date
      2015-08-26
    • Data Source
      KAKENHI-PROJECT-26889037
  • [Presentation] PHITS-TCADシミュレーションによる完全空乏型SOIプロセスにおけるBOX層の厚さと基板バイアスによるソフトエラー耐性の評価2015

    • Author(s)
      張魁元, 神田翔平, 山口潤己, 古田潤, 小林和淑
    • Organizer
      DAシンポジウム
    • Place of Presentation
      石川県加賀市
    • Year and Date
      2015-08-26
    • Data Source
      KAKENHI-PROJECT-26889037
  • [Presentation] Analysis of the Soft Error Rates on 65-nm SOTB and 28-nm UTBB FD-SOI Structures by a PHITS- TCAD Based Simulation Tool2015

    • Author(s)
      張, 神田, 山口, 古田, 小林
    • Organizer
      International Conference on Simulation of Semiconductor Processes and Devices
    • Place of Presentation
      Washington DC, USA
    • Year and Date
      2015-09-10
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02677
  • [Presentation] Anasysis of BOX Layer Thickness on SERs of 65 and 28nm FD-SOI Processes by a Monte-Carlo Based Simulation Tool2015

    • Author(s)
      張, 神田, 山口, 古田
    • Organizer
      International Conference on Solid State Devices and Materials
    • Place of Presentation
      Moscow, Russia
    • Year and Date
      2015-09-30
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02677
  • [Presentation] A Radiation-Hardened Non-redundant Flip-Flop, Stacked Leveling Critical Charge Flip-Flop in a 65 nm Thin BOX FD-SOI Process2015

    • Author(s)
      山口, 古田, 小林
    • Organizer
      The conference on Radiation and its Effects on Components and Systems
    • Place of Presentation
      Moscow, Russia
    • Year and Date
      2015-09-10
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H02677
  • [Presentation] Radiation Hardness Evaluations of FFs on 28nm and 65nm Thin BOX FD-SOI Processes by Heavy-Ion Irradiation2015

    • Author(s)
      M. Hifumi, E. Sonezaki, J. Furuta, and K. Kobayashi
    • Organizer
      International Workshop on Radiation Effects on Semiconductor Devices for Space Applications
    • Place of Presentation
      Gunma, Japan
    • Year and Date
      2015-11-11
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26889037
  • [Presentation] A Radiation-Hardened Non-redundant Flip-Flop, Stacked Leveling Critical Charge Flip-Flop in a 65 nm Thin BOX FD-SOI Process2015

    • Author(s)
      J. Yamaguchi, J. Furuta, and K. Kobayashi
    • Organizer
      The conference on Radiation and its Effects on Components and Systems
    • Place of Presentation
      Moscow, Russia
    • Year and Date
      2015-09-14
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26889037
  • 1.  小林 和淑 (70252476)
    # of Collaborated Projects : 1results
    # of Collaborated Products : 6results
  • 2.  松本 高士 (70417369)
    # of Collaborated Projects : 1results
    # of Collaborated Products : 0results
  • 3.  西澤 真一 (40757522)
    # of Collaborated Projects : 1results
    # of Collaborated Products : 0results
  • 4.  吉河 武文 (60636702)
    # of Collaborated Projects : 1results
    # of Collaborated Products : 0results

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