Kato Kimihiko 加藤公彦

Researcher Number	30815486
Other IDs
Affiliation (Current)	2025: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員
Affiliation (based on the past Project Information) *help	2022 – 2024: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員 2020 – 2021: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究員
Review Section/Research Field	Principal Investigator Basic Section 21060:Electron device and electronic equipment-related
Keywords	Principal Investigator 集積回路 / 急峻スイッチング / 低消費電力 / シリコン / トンネルFET / 共鳴トンネル / 量子井戸 / オン電流 / TFET

Si tunnel transistor with high on-state current assited by resonant state in quantum wellPrincipal Investigator
- Principal Investigator
  
  加藤公彦
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Development of tunnel field-effect transistor with steep switching based on dimensional control of density-of-statePrincipal Investigator
- Principal Investigator
  
  Kato Kimihiko
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  National Institute of Advanced Industrial Science and Technology

All 2023 2022 2021

All Journal Article Presentation

[Journal Article] Single-electron transistor operation of a physically defined silicon quantum dot device fabricated by electron beam lithography employing a negative-tone resist2023
- Author(s)
  Shimpei Nishiyama, Kimihiko Kato, Yongxun Liu, Raisei Mizokuchi, Jun Yoneda, Tetsuo Kodera, and Takahiro Mori
- Journal Title
  
  The Institute of Electronics, Information and Communication Engineers (IEICE) Transactions
  
  Volume: -
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K14797
[Journal Article] Electron beam lithography with negative tone resist for highly integrated silicon quantum bits2021
- Author(s)
  Kato Kimihiko、Liu Yongxun、Murakami Shigenori、Morita Yukinori、Mori Takahiro
- Journal Title
  
  Nanotechnology
  
  Volume: 32 Issue: 48 Pages: 485301-485301
- DOI
  10.1088/1361-6528/ac201b
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K14797
[Journal Article] Si bilayer tunnel field-effect transistor structure realized using tilted ion-implantation technique2021
- Author(s)
  Kato Kimihiko、Asai Hidehiro、Fukuda Koichi、Mori Takahiro、Morita Yukinori
- Journal Title
  
  Solid-State Electronics
  
  Volume: 180 Pages: 107993-107993
- DOI
  10.1016/j.sse.2021.107993
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K14797
[Presentation] Single electron transport and electron spin qubit operation in Si tunnel FETs with an isoelectronic trap impurity of beryllium2022
- Author(s)
  Yoshisuke Ban, Kimihiko Kato, Shota Iizuka, Koji Ishibashi, Satoshi Moriyama, Takahiro Mori, and Keiji Ono
- Organizer
  2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K14797
[Presentation] Single-Electron Transistor Operation of a Physically Defined Silicon Quantum Dot Device Fabricated by Electron Beam Lithography Employing Negative-tone Resist2022
- Author(s)
  Shimpei Nishiyama, Kimihiko Kato, Yongxun Liu, Raisei Mizokuchi, Jun Yoneda, Tetsuo Kodera, and Takahiro Mori
- Organizer
  2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K14797
[Presentation] Introduction of deep impurity levels of S and Zn and high temperature single-electron transport in Si tunnel FETs2022
- Author(s)
  Yoshisuke Ban, Kimihiko Kato, Shota Iizuka, Shigenori Murakami, Koji Ishibashi, Satoshi Moriyama, Takahiro Mori, and Keiji Ono
- Organizer
  2022 International Conference on Solid State Devices and Materials (SSDM 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K14797
[Presentation] シリコン量子ビット作製と大規模集積化に向けた電子線リソグラフィ技術2022
- Author(s)
  加藤公彦
- Organizer
  NPF合同セミナー
- Invited
- Data Source
  KAKENHI-PROJECT-20K14797
[Presentation] 集積シリコン量子ビット作製に向けた電子線リソグラフィ技術の開発2022
- Author(s)
  加藤公彦
- Organizer
  次世代リソグラフィ技術研究会（応用物理学会次世代リソグラフィ技術分科会）
- Invited
- Data Source
  KAKENHI-PROJECT-20K14797
[Presentation] Development of electron beam lithography technique for fabrication of integrated silicon quantum bits2021
- Author(s)
  加藤公彦、柳永勛、村上重則、森田行則、森貴洋
- Organizer
  34th International Microprocesses and Nanotechnology Conference (MNC 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K14797
[Presentation] Electron Beam Lithography for Future Highly-Integrated Si Quantum Bits2021
- Author(s)
  加藤公彦
- Organizer
  BEAMeeting E-Beam Workshop (jointed with Micro and Nano Engineering Conference)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K14797
[Presentation] 集積シリコン量子素子に向けたネガレジスト電子線リソグラフィ技術の構築2021
- Author(s)
  加藤公彦, 柳永勛, 森田行則, 森貴洋
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K14797

1. 飯塚将太 (30814545)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Kato Kimihiko 加藤 公彦

Research Projects

Research Products

Co-Researchers

Si tunnel transistor with high on-state current assited by resonant state in quantum wellPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of tunnel field-effect transistor with steep switching based on dimensional control of density-of-statePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Journal Article] Single-electron transistor operation of a physically defined silicon quantum dot device fabricated by electron beam lithography employing a negative-tone resist2023

Author(s)

Journal Title

Data Source

[Journal Article] Electron beam lithography with negative tone resist for highly integrated silicon quantum bits2021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Si bilayer tunnel field-effect transistor structure realized using tilted ion-implantation technique2021

Author(s)

Journal Title

DOI

Data Source

[Presentation] Single electron transport and electron spin qubit operation in Si tunnel FETs with an isoelectronic trap impurity of beryllium2022

Author(s)

Organizer

Data Source

[Presentation] Single-Electron Transistor Operation of a Physically Defined Silicon Quantum Dot Device Fabricated by Electron Beam Lithography Employing Negative-tone Resist2022

Author(s)

Organizer

Data Source

[Presentation] Introduction of deep impurity levels of S and Zn and high temperature single-electron transport in Si tunnel FETs2022

Author(s)

Organizer

Data Source

[Presentation] シリコン量子ビット作製と大規模集積化に向けた電子線リソグラフィ技術2022

Author(s)

Organizer

Data Source

[Presentation] 集積シリコン量子ビット作製に向けた電子線リソグラフィ技術の開発2022

Author(s)

Organizer

Data Source

[Presentation] Development of electron beam lithography technique for fabrication of integrated silicon quantum bits2021

Author(s)

Organizer

Data Source

[Presentation] Electron Beam Lithography for Future Highly-Integrated Si Quantum Bits2021

Author(s)

Organizer

Data Source

[Presentation] 集積シリコン量子素子に向けたネガレジスト電子線リソグラフィ技術の構築2021

Author(s)

Organizer

Data Source

Kato Kimihiko 加藤公彦