Kanegae Kazutaka 鐘ケ江一孝

… Alternative Names

鐘ヶ江一孝カネガエカズタカ

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Researcher Number	30962435
Other IDs	https://orcid.org/0000-0002-3801-0138
Affiliation (Current)	2026: 京都工芸繊維大学, 電気電子工学系, 助教
Affiliation (based on the past Project Information) *help	2022 – 2024: 京都工芸繊維大学, 電気電子工学系, 助教
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related / 0302:Electrical and electronic engineering and related fields
Keywords	Principal Investigator 欠陥準位 / 半導体パワーデバイス / 酸化ガリウム / MIS構造 / 容量過渡分光法 / 過渡容量分光法 / 点欠陥

Research Projects
(3 results)
Research Products
(4 results)

電子デバイス応用に向けた絶縁体/酸化ガリウム界面欠陥の定量と制御Principal Investigator
- Principal Investigator
  
  鐘ケ江一孝
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Kyoto Institute of Technology
電子デバイス応用に向けた絶縁体/酸化ガリウム界面欠陥の定量と制御Principal Investigator
- Principal Investigator
  
  鐘ヶ江一孝
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Kyoto Institute of Technology
Deep levels in gallium oxide homoepitaxial layersPrincipal Investigator
- Principal Investigator
  
  Kanegae Kazutaka
- Project Period (FY)
  2022 – 2023
- Research Category
  
  Grant-in-Aid for Research Activity Start-up
- Review Section
  
  0302:Electrical and electronic engineering and related fields
- Research Institution
  Kyoto Institute of Technology

All 2025 2024

All Journal Article Presentation

[Journal Article] Ni/rutile GeO2 vertical Schottky barrier diode on Nb-doped TiO2 substrate using Sb-doped graded GeySn1-yO2 buffer layers2025
- Author(s)
  Kanegae Kazutaka、Shimazoe Kazuki、Seike Ichiro、Nishinaka Hiroyuki
- Journal Title
  
  Applied Physics Express
  
  Volume: 18 Issue: 4 Pages: 041001-041001
- DOI
  10.35848/1882-0786/adc3e8
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23KJ1404, KAKENHI-PROJECT-24K17308
[Presentation] ワイドバンドギャップ半導体の点欠陥の定量2024
- Author(s)
  鐘ケ江一孝, 堀田昌宏, 西中浩之, 木本恒暢, 須田淳
- Organizer
  第16回ナノ構造エピタキシャル成長講演会
- Invited
- Data Source
  KAKENHI-PROJECT-22K20428
[Presentation] ホモエピタキシャル成長n 型β-酸化ガリウム層中の点欠陥評価2024
- Author(s)
  鐘ケ江一孝, 幡山英仁, 西中浩之
- Organizer
  202４年度第3 回半導体エレクトロニクス部門委員会第2 回研究会
- Data Source
  KAKENHI-PROJECT-24K17308
[Presentation] ワイドバンドギャップ半導体の点欠陥の定量2024
- Author(s)
  鐘ケ江一孝, 堀田昌宏, 西中浩之, 木本恒暢, 須田淳
- Organizer
  ナノ構造・エピタキシャル成長講演会
- Invited
- Data Source
  KAKENHI-PROJECT-24K17308

Kanegae Kazutaka 鐘ケ江 一孝

鐘ヶ江 一孝 カネガエ カズタカ

Research Projects

Research Products

電子デバイス応用に向けた絶縁体/酸化ガリウム界面欠陥の定量と制御Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

電子デバイス応用に向けた絶縁体/酸化ガリウム界面欠陥の定量と制御Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Deep levels in gallium oxide homoepitaxial layersPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Journal Article] Ni/rutile GeO2 vertical Schottky barrier diode on Nb-doped TiO2 substrate using Sb-doped graded GeySn1-yO2 buffer layers2025

Author(s)

Journal Title

DOI

Data Source

[Presentation] ワイドバンドギャップ半導体の点欠陥の定量2024

Author(s)

Organizer

Data Source

[Presentation] ホモエピタキシャル成長n 型β-酸化ガリウム層中の点欠陥評価2024

Author(s)

Organizer

Data Source

[Presentation] ワイドバンドギャップ半導体の点欠陥の定量2024

Author(s)

Organizer

Data Source

Kanegae Kazutaka 鐘ケ江一孝

鐘ヶ江一孝カネガエカズタカ