OHACHI Tadashi 大鉢忠

… Alternative Names

大鉢忠オオハチタダシ

OHACHI T. 大鉢忠

OHASHI Tadashi 大鉢忠

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Researcher Number	40066270
Other IDs
External Links
Affiliation (based on the past Project Information) *help	2008 – 2010: Doshisha University, 理工学部, 教授 1995 – 1996: 同志社大学, 工学部, 教授 1993: 同志社大, 工学部, 教授 1990 – 1992: 同志社大学, 工学部, 教授 1987: Department of Electrical Engineering, 工学部, 教授 1986: 同志社大, 工学部, 教授
Review Section/Research Field	Principal Investigator 結晶学 / Applied materials science/Crystal engineering Except Principal Investigator 固体物性
Keywords	Principal Investigator CuIn_<21>S_<32> / 空孔欠陥型スピネル / thermal equilibrium Ionic-electronic Mixed Superionic Conductors / <alpha>-Ag_2s / facet transition / Roughening transition / α-【Ag_2】S / 表面自由エネルギー密度 / 平衡形 / 電子・イオン混合超イオン導電体 … More / α-Ag_2S / ファセット転移 / ラフニング転移 / defect type spinel / Solid state Crystal growth / Solid state reaction / sulfide spinel compounds / 欠陥型スピネル / 固相結晶成長 / 固相反応 / 硫化物スピネル / 界面反応エピタキシャル法 / AlN / ヘテロエピタキシャル成長 / III族窒化物 / 窒化シリコン / AM-MEE成長法 / AlNダブルバッファー層 / 原子フラックス測定 / 半導体物性 / 電子・電気材料 / エピタキシャル / PA-MBE / 結晶成長 / CuIn_5S_8 / スピネルのイオン伝導 / パルスNMR / CuIn_<11>S_<17> / AgIn_<21>S_<32> / ベクトルネットワークアナライザ / マイクロ波イオン伝導 / CuIn_7S_<11> / AgIn_7S_<11> … More Except Principal Investigator 原子ステップ / MBE / 成長カイネティクス / 核形成 / Structure Analysis / Light Scattering / Lattice Dynamics / mixed Conductors / Lattice Vibration / Ionic Conduction / Solid Electrolytes / Superionic Conductors / 構造解析 / 光散乱 / 格子力学 / 電子・イオン混合伝導 / 格子振動 / イオン伝導 / 固体電解質 / 超イオン導電体 / ラマン分光法 / 荒れた面 / 巨大ステップ / 再蒸発 / 表面拡散 / Jacksonの理論 / 微斜面 / 過飽和度 / 表面拡散距離 Less

Growth and properties of metastable cubic group III nitride semiconductors by developing a surface structure control methodPrincipal Investigator
- Principal Investigator
  
  OHACHI Tadashi
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Doshisha University
空隙型スピネル構造のイオン移動経路における高速イオンのイオンダイナミクスPrincipal Investigator
- Principal Investigator
  
  大鉢忠
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Doshisha University
銀銅空孔欠陥型硫化物スピネル化合物のマイクロ波領域でのイオンダイナミクスPrincipal Investigator
- Principal Investigator
  
  大鉢忠
- Project Period (FY)
  1995
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Doshisha University
核形成・成長のカイネティクス
- Principal Investigator
  
  西永頌
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The University of Tokyo
核形成と成長のカイネティクス
- Principal Investigator
  
  西永頌
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The University of Tokyo
Study on Single Crystal Growth by Solid State Recrystallization using Defect Sulfide Spinel CompoundsPrincipal Investigator
- Principal Investigator
  
  OHACHI Tadashi
- Project Period (FY)
  1991 – 1992
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  結晶学
- Research Institution
  DOSHISHA UNIVERSITY
Structure and Dynamics of Superionic Conductors
- Principal Investigator
  
  ISHIGAME M.
- Project Period (FY)
  1989 – 1991
- Research Category
  
  Grant-in-Aid for Co-operative Research (A)
- Research Field
  
  固体物性
- Research Institution
  Tohoku University
Experimental Verification of Roughening Transition Transition by Ionicelectronic Mixed Superionic ConductorsPrincipal Investigator
- Principal Investigator
  
  OHASHI Tadashi
- Project Period (FY)
  1986 – 1987
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  結晶学
- Research Institution
  Doshisha University

All 2011 2010 2009 2008

All Journal Article Presentation Patent

[Journal Article] Improvement of Plasma-Assisted Molecular Beam Epitaxial Growth of Group III Nitrides on Si Controlling Radio Frequency Discharge Modes and Exposure of Nitrogen Flux2011
- Author(s)
  Tadashi Ohachia, Nobuhiko Yamabea, Motoi Wada, Osamu Ariyada
- Journal Title
  
  Jpn.J.Appl.Phys. 50
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360011
[Journal Article] Improvement of Plasma-Assisted Molecular Beam Epitaxial Growth of Group III Nitrides on Si Controlling Radio Frequency Discharge Modes and Exposure of Nitrogen Flux2011
- Author(s)
  Tadashi Ohachia, Nobuhiko Yamabea, Motoi Wada, Osamu Ariyada
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 50
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360011
[Journal Article] Interface roughness of double buffer layer of GaN film grown on Si(111) substrate using GIXR analysis2011
- Author(s)
  Yuka Yamamoto, Nobuhiko Yamabe, Tadashi Ohachi
- Journal Title
  
  J.Cryst.Growth
  
  Volume: 318 Pages: 474-478
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360011
[Journal Article] Control of active nitrogen species using by RF-MBE nitrides growth on Si2011
- Author(s)
  Tadashi Ohachi, Nobuhiko Yamabe, Yuka Yamamoto, Motoi Wada, Osamu Ariyada
- Journal Title
  
  J.Cryst.Growth 318
  
  Pages: 468-473
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360011
[Journal Article] Control of active nitrogen species using by RF-MBE nitrides growth on Si2011
- Author(s)
  Tadashi Ohachi, Nobuhiko Yamabe, Yuka Yamamoto, Motoi Wada, Osamu Ariyad
- Journal Title
  
  J.Cryst.Growth
  
  Volume: 318 Pages: 468-473
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360011
[Journal Article] Epitaxial growth of β-Si_3N_4 by the nitridation of Si with adsorbed N atoms for interface reaction epitaxy of double buffer AlN(0001)/β-Si_3N_4/Si(111)2011
- Author(s)
  Nobuhiko Yamabe, Yuka Yamamoto, Tadashi Ohachi
- Journal Title
  
  Phys.stat.sol. C8
  
  Pages: 1552-1555
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360011
[Journal Article] Epitaxial growth of β-Si_3N_4 by the nitridation of Si with adsorbed N atoms for interface reaction epitaxy of double buffer AlN (0001)/β-Si_3N_4/Si(111)2011
- Author(s)
  Nobuhiko Yamabe, Yuka Yamamoto, Tadashi Ohachi
- Journal Title
  
  Phys.stat.sol.
  
  Volume: C8 Pages: 1552-1555
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360011
[Journal Article] Interface roughness of double buffer layer of GaN film grown on Si(111) substrate using GIXR analysis2011
- Author(s)
  Yuka Yamamoto, Nobuhiko Yamabe, Tadashi Ohachi
- Journal Title
  
  J.Cryst.Growth 318
  
  Pages: 474-478
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360011
[Journal Article] in-situ measurement of adsorbed nitrogen atoms for PA-MBE growth of group III nitrides on Si2011
- Author(s)
  Tadashi Ohachi, Nobuhiko Yamabe, Yuka Yamamoto, Motoi Wada, Osamu Ariyad
- Journal Title
  
  Phys.stat.sol.
  
  Volume: C8 Pages: 1491-1494
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360011
[Journal Article] in-situ measurement of adsorbed nitrogen atoms for PA-MBE growth of group III nitrides on Si2011
- Author(s)
  Tadashi Ohachi, Nobuhiko Yamabe, Yuka Yamamoto, Motoi Wada, Osamu Ariyada
- Journal Title
  
  Phys.stat.sol. C8
  
  Pages: 1491-1494
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360011
[Journal Article] Measurement of nitrogen atomic flux for RF-MBE growth of GaN and AlN on Si substrates2009
- Author(s)
  T.Ohachi
- Journal Title
  
  J.Crystal Growth 311
  
  Pages: 2987-2991
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360011
[Journal Article] Measurement of nitrogen atomic flux for RF-MBE growth of GaN and AlN on Si substrates2009
- Author(s)
  T.Ohachi, H.Shimomura, T.Shimamura, O.Ariyada, M.Wada
- Journal Title
  
  J.Crystal Growth 311
  
  Pages: 2987-2991
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360011
[Patent] 原子フラックス測定装置2010
- Inventor(s)
  大鉢忠、和田元、有屋田修、山邊信彦
- Industrial Property Rights Holder
  大鉢忠、和田元、有屋田修、山邊信彦
- Industrial Property Number
  2010-287599
- Filing Date
  2010-12-24
- Data Source
  KAKENHI-PROJECT-20360011
[Patent] 原子フラックス測定装置2010
- Inventor(s)
  大鉢忠、和田元、有屋田修、山邊信彦
- Industrial Property Rights Holder
  大鉢忠、和田元、有屋田修、山邊信彦
- Industrial Property Number
  2010-152658
- Filing Date
  2010-07-05
- Data Source
  KAKENHI-PROJECT-20360011
[Patent] シリコン基板上にSi_3N_4へテロエピタキシャルバッファ層を有する窒化シリコン基板の作製方法および装置2009
- Inventor(s)
  大鉢忠、和田元、有屋田修、山邊信彦
- Industrial Property Rights Holder
  大鉢忠、和田元、有屋田修、山邊信彦
- Industrial Property Number
  2009-079062
- Filing Date
  2009-03-27
- Data Source
  KAKENHI-PROJECT-20360011
[Patent] 原子フラックス測定装置2009
- Inventor(s)
  大鉢忠、和田元、有屋田修
- Industrial Property Rights Holder
  大鉢忠、和田元、有屋田修
- Patent Publication Number
  2009-146755
- Filing Date
  2009-07-02
- Data Source
  KAKENHI-PROJECT-20360011
[Patent] 特許願2009
- Inventor(s)
  大鉢忠, 他3名
- Industrial Property Rights Holder
  大鉢忠, 他3名
- Industrial Property Number
  2009-079602
- Filing Date
  2009-03-27
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Crack in HVPE grown 2H-AlN films on AlN templatesprepared by PA-MBE using AM-MEE2011
- Author(s)
  T.Ohachi, N.Yamabe, Y.Yamamoto, H.Murakami, Y.Kumagai, A.Koukitu
- Organizer
  7th International Workshop on Nitride Semiconductors (IWBNS7)
- Place of Presentation
  Koyasan University, Japan
- Year and Date
  2011-03-18
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Crack in HVPE grown 2H-AlN films on AlN templatesprepa red by PA-MBE using AM-MEE2011
- Author(s)
  T.Ohachi, N.Yamabe, Y.Yamamoto, H.Murakami, Y.Kumagai, A.Koukitu
- Organizer
  7th International Workshop on Nitride Semiconductors (IWBNS7)
- Place of Presentation
  高野山大学
- Year and Date
  2011-03-18
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Parallel mesh electrode to monitor nitrogen atoms for PA-MBE2011
- Author(s)
  Tadashi Ohachi, Nobuhiko Yamabe, Motoi Wada, Osamu Ariyada
- Organizer
  ISPlasma2011
- Place of Presentation
  名古屋工業大学
- Year and Date
  2011-03-07
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] RF-MBEプラズマ窒素源の窒素原子フラックスその場計測2010
- Author(s)
  大鉢忠
- Organizer
  第65回応用物理学関係連合講演会
- Place of Presentation
  東海大学湘南学舎(平塚市)
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Si(111)上の吸着窒素原子によるβ-Si3N4成長とAl照射による界面反応エピタキシーAlN成長2010
- Author(s)
  山邊信彦, 山本由香, 大鉢忠
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] in-situ measurement of adsorbed nitrogen atoms for RF-MBE growth of group III nitrides on Si2010
- Author(s)
  Tadashi Ohachi, Nobuhiko Yamabe, Yuka Yamamoto, Motoi Wada, Osamu Ariyada
- Organizer
  The third International Symposium on Growth of III-Nitrides
- Place of Presentation
  Montpellier, France
- Year and Date
  2010-07-05
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Nitridation of Si and activity modulation of nitrogen atoms for growth of group III nitrides on Si using PA-MBE2010
- Author(s)
  Tadashi Ohachi, Nobuhiko Yamabe, Yuka Yamamoto, Motoi Wada, Osamu Ariyada
- Organizer
  The 14th International Summer School on Crystal Growth (ISSCG-14)
- Place of Presentation
  Dalian International Finance Conference Center, Dalian, China
- Year and Date
  2010-08-01
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] RF-MBEプラズマ窒素源の窒素原子フラックスその場計測2010
- Author(s)
  大鉢忠
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学(津市)
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Epitaxial growth of β-Si3N4 by the nitridation of Si by adsorbed N atoms or interface reaction epitaxy of double buffer AlN(0001)/β-Si3N4/Si(111) structure2010
- Author(s)
  Nobuhiko Yamabe, Yuka Yamamoto, Tadashi Ohachi
- Organizer
  The third International Symposium on Growth of III-Nitrides
- Place of Presentation
  Montpellier, France
- Year and Date
  2010-07-05
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Control of active nitrogen species using by RF-MBE nitrides growth on Si2010
- Author(s)
  Tadashi Ohachi, Nobuhiko Yamabe, Yuka Yamamoto, Motoi Wada, Osamu Ariyada
- Organizer
  The 16th International Conference on Crystal Groqwth( ICCG-16)
- Place of Presentation
  Beijing International Convention Center, Beijing, China
- Year and Date
  2010-08-09
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Control of active nitrogen species using by RF-MBE nitrides growth on Si2010
- Author(s)
  Tadashi Ohachi, Nobuhiko Yamabe, Yuka Yamamoto, Motoi Wada, Osamu Ariyada
- Organizer
  The16th International Conference on Crystal Groqwth (ICCG-16)
- Place of Presentation
  Beijing International Convention Center, Beijing, China
- Year and Date
  2010-08-09
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Si(111)上の吸着窒素原子によるβ-Si3N4成長とAl照射による界面反応エピタキシーAlN成長2010
- Author(s)
  大鉢忠
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学(津市)
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Nitridation of Si and activity modulation of nitrogen atoms_ for growth of group III nitrides on Si using PA-MBE2010
- Author(s)
  大鉢忠, Nobuhiko Yamabe, Yuka Yamamoto, Motoi Wada, Osamu Ariyada
- Organizer
  The 14th International Summer School on Crystal Growth (ISSCG-14)
- Place of Presentation
  Dalian International Finance Conference Center, Dalian, China
- Year and Date
  2010-08-01
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] RF nitrogen source for MBE growth of group III nitrides on Si and its application for AM-MEE2010
- Author(s)
  T.Ohachi
- Organizer
  Interntional Symposium of Plasma 2010
- Place of Presentation
  名城大学(名古屋市)
- Year and Date
  2010-03-09
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] RF-MBE成長用2H-AlN/β-Si3N4/Si(111)の界面反応エピタキシー2010
- Author(s)
  大鉢忠
- Organizer
  第65回応用物理学関係連合講演会
- Place of Presentation
  東海大学湘南学舎(平塚市)
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Polarity of AlN and GaN films grown by RF-MBE on double buffer AlN(0001)/β-Si3N4/Si(111)2010
- Author(s)
  Nobuhiko Yamabe, Yuka Yamamoto, Tadashi Ohachi
- Organizer
  The 16th International Conference on Crystal Groqwth( ICCG-16)
- Place of Presentation
  Beijing International Convention Center, Beijing, China
- Year and Date
  2010-08-09
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Interface roughness of double buffer layer of GaN film grown on Si(111) substrate using GIXR analysis2010
- Author(s)
  Yuka Yamamoto, Nobuhiko Yamabe, Tadashi Ohachi
- Organizer
  The 16th International Conference on Crystal Groqwth( ICCG-16)
- Place of Presentation
  Beijing International Convention Center, Beijing, China
- Year and Date
  2010-08-09
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] RF-MBEプラズマ窒素源の窒素原子フラックスその場計測2010
- Author(s)
  大鉢忠,山邊信彦,山本由香,和田元,有屋田修
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] PA-MBEによるSi上へのAlN、GaN膜ヘテロエピタキシャル成長 -窒素原子源、界面反応エピタキシー、活性度変調マイグレーションエンハンストエピタキシー-2010
- Author(s)
  大鉢忠
- Organizer
  「結晶成長の数理」第5回研究会
- Place of Presentation
  学習院大学(招待講演)
- Year and Date
  2010-12-24
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] RF-MBE法によるSi(111)基板上の組成連続変化AlGaN層を用いた六方晶GaNの活性度変調MEE成長2009
- Author(s)
  大鉢忠
- Organizer
  第38回結晶成長国内会議
- Place of Presentation
  名城大学(名古屋市)
- Year and Date
  2009-09-13
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Si(111)基板上β-Si3N4へのAl照射による2H-AlN(0001)テンプレート作製とAlN表面構造2009
- Author(s)
  大鉢忠
- Organizer
  第53回マテリアルズ・テーラリング研究会
- Place of Presentation
  加藤科学振興会軽井沢研修所
- Year and Date
  2009-07-31
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Growth of 2H-AlN films on Si(111)grown by RF-MBE using an interface reaction epitaxy and AM-MEE for HVPE growth2009
- Author(s)
  T.Ohachi
- Organizer
  The 6^<th> International Workshop of Bulk Nitride(IWBNS-VI)
- Place of Presentation
  Galindia Mazurski Eden, Poland
- Year and Date
  2009-08-27
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] RF-MBEプラズマ窒素源の活性度変調と窒素原子フラックス計測2009
- Author(s)
  大鉢忠
- Organizer
  第39回結晶成長国内会議
- Place of Presentation
  名城大学(名古屋市)
- Year and Date
  2009-09-13
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] β-Si3N4へのAl照射による反応性エピタキシャルAlNテンプレート成長とAM-MEE法による2H-AlN膜成長2009
- Author(s)
  大鉢忠
- Organizer
  日本結晶成長学会ナノエピ分科会第一回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大学(小金井市)
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] 2H-AlN/β-Si3N4/Si(111)の界面反応エピタキシーとSi(111)上III族窒化物MBE成長2009
- Author(s)
  大鉢忠
- Organizer
  第39回結晶成長国内会議
- Place of Presentation
  名城大学(名古屋市)
- Year and Date
  2009-09-13
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] RF-MBEにおけるSi (111)上2H-AIN (0001)用β-Si3N4窒化膜成長2009
- Author(s)
  大鉢忠
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  つくば市
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] RF-MBE growth of group III nitrides on Si using activity modulation migration enhanced epitaxy2009
- Author(s)
  T.Ohachi
- Organizer
  The 15th Chinese Conference on Crystal Growth(CCCG-15)
- Place of Presentation
  寧波大学(中国)
- Year and Date
  2009-11-17
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] RF-MBE法により成長させたSi基板上の立方晶と六方晶GaNの混在比評価2009
- Author(s)
  大鉢忠
- Organizer
  日本結晶成長学会ナノエピ分科会第一回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大学(小金井市)
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Si(111)基板上β-Si3N4へのA1照射による2H-A1N(0001)テンプレート作製とAIN表面構造2009
- Author(s)
  大鉢忠
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  つくば市
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] RF-MBE growth of group III nitrides on Si2009
- Author(s)
  T.Ohachi
- Organizer
  2009 Japan-China Crystal Grows and Crystal Technology Symposium
- Place of Presentation
  大阪大学銀杏会館(吹田市)
- Year and Date
  2009-07-22
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Activity Modulation Migration Enhanced MBE to grow GaN and AlN on Si substrates2008
- Author(s)
  T. Ohachi
- Organizer
  The 4th Asian Conference on Crystal Growth and Crystal Technology
- Place of Presentation
  Sendai
- Year and Date
  2008-05-21
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] 窒素活性度変調(Activity Modulation, AM)法によるSi窒化とSi上のIII族窒化物MBE成長2008
- Author(s)
  大鉢忠
- Organizer
  第38回結晶成長国内会議
- Place of Presentation
  仙台市
- Year and Date
  2008-09-11
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] RF-MBE法によるSi (lll)基板上の組成連続変化AlGaN層を用いた六方晶GaNの活性度変調MEE成長2008
- Author(s)
  大鉢忠
- Organizer
  第38回結晶成長国内会議
- Place of Presentation
  仙台市
- Year and Date
  2008-09-11
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Measurement of nitrogen atomic flux for RF-MBE growth of GaN and AlN on Si substrates2008
- Author(s)
  T. Ohachi
- Organizer
  The second International Symposium of Growth of Nitrides
- Place of Presentation
  Izu
- Year and Date
  2008-07-06
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] RF-MBE法による窒素活性度変調窒化法を用いたSi (111)窒化膜上のAIN膜成長2008
- Author(s)
  大鉢忠
- Organizer
  第38回結晶成長国内会議
- Place of Presentation
  仙台市
- Year and Date
  2008-09-11
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] RF-MBE法により成長させたSi基板上の立方晶と六方晶GaNの混在比評価2008
- Author(s)
  大鉢忠
- Organizer
  第38回結晶成長国内会議
- Place of Presentation
  仙台市
- Year and Date
  2008-09-11
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] AlN and GaN hetero epitaxy on Si substrate using activity modulation migration enhanced MBE2008
- Author(s)
  T. Ohachi
- Organizer
  UCr2008 "21st Congress and General Assembly of the International Union of Crystallography
- Place of Presentation
  Osaka
- Year and Date
  2008-08-23
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Measurement of nitrogen atomic flux for RF-MBE growth of GaN and AlN on Si substrates2008
- Author(s)
  T. Ohachi
- Organizer
  5th Int. Symp. of Electrochemical Processing of Tailored Materials (EPTM2008)
- Place of Presentation
  Nagoya
- Year and Date
  2008-12-10
- Data Source
  KAKENHI-PROJECT-20360011
[Presentation] Nitrdation of Si(lll) for growth of 2H-AlN(0001)/β-Si3N4/Si (lll) structure2008
- Author(s)
  T. Ohachi
- Organizer
  The second International Symposium of Growth of Nitrides
- Place of Presentation
  Izu
- Year and Date
  2008-07-06
- Data Source
  KAKENHI-PROJECT-20360011

1. 西永頌 (10023128)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
2. 岸清 (90087354)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
3. 墻内千尋 (80027812)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
4. 七里公毅 (80046987)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
5. 権田武彦 (50084455)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. 後藤芳彦 (90005942)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. KANGAWA Yoshihiro (90327320)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. ISHIGAME M. (40006143)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. KOBAYASHI M. (20018881)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. ISHII T. (90033240)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. HOSHINO S. (40013453)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. MATSUBARA T. (60025202)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. 池沢幹彦 (10004334)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. 上田顕 (20025852)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

OHACHI Tadashi 大鉢 忠

大鉢 忠 オオハチ タダシ

OHACHI T. 大鉢 忠

OHASHI Tadashi 大鉢 忠

Research Projects

Research Products

Co-Researchers

Growth and properties of metastable cubic group III nitride semiconductors by developing a surface structure control methodPrincipal Investigator

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空隙型スピネル構造のイオン移動経路における高速イオンのイオンダイナミクスPrincipal Investigator

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銀銅空孔欠陥型硫化物スピネル化合物のマイクロ波領域でのイオンダイナミクスPrincipal Investigator

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核形成・成長のカイネティクス

Principal Investigator

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核形成と成長のカイネティクス

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Study on Single Crystal Growth by Solid State Recrystallization using Defect Sulfide Spinel CompoundsPrincipal Investigator

Principal Investigator

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Structure and Dynamics of Superionic Conductors

Principal Investigator

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Experimental Verification of Roughening Transition Transition by Ionicelectronic Mixed Superionic ConductorsPrincipal Investigator

Principal Investigator

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[Journal Article] Improvement of Plasma-Assisted Molecular Beam Epitaxial Growth of Group III Nitrides on Si Controlling Radio Frequency Discharge Modes and Exposure of Nitrogen Flux2011

Author(s)

Journal Title

Data Source

[Journal Article] Improvement of Plasma-Assisted Molecular Beam Epitaxial Growth of Group III Nitrides on Si Controlling Radio Frequency Discharge Modes and Exposure of Nitrogen Flux2011

Author(s)

Journal Title

Data Source

[Journal Article] Interface roughness of double buffer layer of GaN film grown on Si(111) substrate using GIXR analysis2011

Author(s)

Journal Title

Data Source

[Journal Article] Control of active nitrogen species using by RF-MBE nitrides growth on Si2011

Author(s)

Journal Title

Data Source

[Journal Article] Control of active nitrogen species using by RF-MBE nitrides growth on Si2011

Author(s)

Journal Title

Data Source

[Journal Article] Epitaxial growth of β-Si_3N_4 by the nitridation of Si with adsorbed N atoms for interface reaction epitaxy of double buffer AlN(0001)/β-Si_3N_4/Si(111)2011

Author(s)

Journal Title

Data Source

[Journal Article] Epitaxial growth of β-Si_3N_4 by the nitridation of Si with adsorbed N atoms for interface reaction epitaxy of double buffer AlN (0001)/β-Si_3N_4/Si(111)2011

Author(s)

Journal Title

Data Source

[Journal Article] Interface roughness of double buffer layer of GaN film grown on Si(111) substrate using GIXR analysis2011

OHACHI Tadashi 大鉢忠

大鉢忠オオハチタダシ

OHACHI T. 大鉢忠

OHASHI Tadashi 大鉢忠