OGAWA Matsuto 小川真人

… Alternative Names

小川真人オカ゛ワマツト

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Researcher Number	40177142
Other IDs
Affiliation (based on the past Project Information) *help	2012 – 2016: 神戸大学, 工学(系)研究科(研究院), 教授 2012: 神戸大学, 大学院・工学研究科, 教授 2007 – 2011: Kobe University, 工学研究科, 教授 2008: Kobe University, 大学院工学研究科, 教授 2005 – 2006: Kobe University, Department of Engineering, Professor, 工学部, 教授 … More 2004: 神戸大学, 大学院・自然科学研究科, 教授 2001 – 2003: 神戸大学, 工学部, 教授 1997: 神戸大学, 工学部 1995 – 1996: 神戸大学, 工学部, 助教授 1990: 神戸大学, 工学部, 講師 1986 – 1987: 神戸大学, 工学部, 助手 Less
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / 電子デバイス・機器工学 Except Principal Investigator 計測・制御工学 / Electronic materials/Electric materials / 電子材料工学
Keywords	Principal Investigator 強束縛近似法 / 第一原理計算 / 非平衡グリーン関数法 / 非平衡Green関数法 / 非平衡グリーン関数 / 第一原理バンド構造計算 / Web Hub / 量子輸送 / 第一原理密度汎関数法 / 原子軌道展開 … More / ナノデバイス / 擬スペクトル法 / 量子輸送解析 / 量子デバイスシミュレーション / 量子力学的シミュレーション / Wigner関数 / バンド混合効果 / バンド構造 / 磁性半導体 / 半導体中のスピン制御 / Device Modeling / Quantum Transport Analysis / Ab-Initio Density Functional Calculation / Nano-Scale MOSFET / Tight-Binding Approximation / Non-Equilibrium Green's Function / 量子輸送デバイスモデリング / 量子輸送モデリング / 遺伝的アルゴリズム / 強束縛近似ハミルトニアン / デバイスモデリング / ナノ構造MOSFET / Wigner Distribution Function / Band Mixing Effect / Liouville Equation / Stark Effect / Band Structures / Diluted Magnetic Semiconductors / Spin Controll in Nano-Structures / 磁気光吸収効果 / シュテルン・ゲルラッハ効果 / スピントランジスタ / リューヴィル方程式 / シュタルク効果 / マルチスケールシミュレーション / 非平衡Green関数 / 電子構造計算 / ナノトランジスタシミュレーション / 強束縛近似モデル / ナノワイヤFET / 超並列化JD型固有値解法 / Gauss quadrature近似展開 / BPSM法 / Jacobi-Davidson 型固有値問題 / 超並列高速化グリーン関数ソルバー / 京コンピュータ / nano FET / NEGF法 / 強束縛近似 / 原子軌道法 / 第一原理電子状態解析 / 原子膜デバイス / 電界効果型トランジスタ / ナノデバイスシミュレーション / 有限差分法 / スペクトル法 / 多項式線形結合 / Gauss求積法 / 多項式線形結合法 / Jacobi-Davidson法 / ガウス求積法 / 並列化固有値解析 / 歪効果 / 微細化MOS / Si Nano-Wire (SNW) MOSFET / sp3sd5多バンド強束縛近似法 / ブリッジ関数擬スペクトル法(BPSM) / 非平衡グリーン関数(NEGF)法 / 複素バンド構造 / 多バンド強束縛近似 / グラーフェンナノリボン / III-V属/Siヘテロ構造 / 量子細線トンネルトランジスタ / ナノ構造トランジスタ / トンネルトランジスタ / 原子レベルシミュレーション / 第一原理分子動力学法 / 機能性ナノ分子の設計 / ポリチオフェン(PDT) / マイクロナノデバイス / 電子デバイス・機器 / ナノ材料 / 先端機能デバイス / ナノバイオ / 素子設計 / デバイス物理 / 分子デバイス / エバネッセントモード / sp^3s^ 強結合近似 … More Except Principal Investigator InAlAs / InGaAs / Deep traps / Capacitance-Voltage characteristics / Compound semiconductor hetero-jnention / Deep Level Transient Spectroscopy / インジウムガリウムリン / インジウムガリウムヒソリン / 格子ミスマッチ / 瞬時分光システム容量法 / 過渡容量分光法 / 欠陥準位 / 深い不純物〓位 / 容量・電位特性 / 化合物半導体ヘテロ接合 / 過度容量分光法 / distributed Bragg reflector / polarization stabilization / (775)B InP substrate / (775)B GaAs substrate / quantum wire / vertical cavity surface emitting laser / (775)B InP基盤 / (775)B GaAs基盤 / InGaAS / 分布型ブラッグ反射器 / 偏光制御 / (775)B InP基板 / (775)B GaAs基板 / 量子細線 / 面発光レーザ / 量子井戸 / δ(デルタ)ド-ピング / 正孔蓄積 / ヘテロ接合 / ウィグナ-関数 / 量子輸送 / 量子サイズ構造 / アバランシェホトダイオ-ド Less

Development of an Atomistic Device Simulatior by High Performance ComputerPrincipal Investigator
- Principal Investigator
  
  Ogawa Matsuto
- Project Period (FY)
  2013 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Kobe University
Development of a Device Simulator Based on an Atomistic Large Scale CalculationPrincipal Investigator
- Principal Investigator
  
  OGAWA Matsuto
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Kobe University
Design of New Structure and New Material Devices by a Quantum Transport Simulator in Ultimately Scaled VLSIsPrincipal Investigator
- Principal Investigator
  
  OGAWA Matsuto
- Project Period (FY)
  2009 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Kobe University
Study on the Optimal Design of Molecular Transistors in Next Generation Based on a Quantum Mechanical SimulationPrincipal Investigator
- Principal Investigator
  
  OGAWA Matsuto
- Project Period (FY)
  2005 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Kobe University
Fabrication of long-wavelength-range quantum wire lasers
- Principal Investigator
  
  HIYAMIZU Satoshi
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka University
Study on Web Hub System of Nano-Eledronic Device ModelingPrincipal Investigator
- Principal Investigator
  
  OGAWA Matsuto
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Kobe University
磁性半導体量子構造を用いたブロッホウォールメモリの研究Principal Investigator
- Principal Investigator
  
  小川真人
- Project Period (FY)
  1997
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Kobe University
Basic Research of a Spin Transistor Based on the Quantum Transport in an Inhomogeneous Magnetic FieldPrincipal Investigator
- Principal Investigator
  
  OGAWA Matsuto
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Kobe University
量子トンネル効果を利用した超高速受光素子に関する研究
- Principal Investigator
  
  三好旦六
- Project Period (FY)
  1990
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  電子材料工学
- Research Institution
  Kobe University
Research on Instantaneous Electrical and Optical Characterization systems for Alloy Semiconductors
- Principal Investigator
  
  HONGO Shozo
- Project Period (FY)
  1986 – 1987
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  計測・制御工学
- Research Institution
  KOBE UNIVERSITY

[Book] ナノエレクトロニクスの基礎2007
- Author(s)
  三好旦六, 小川真人, 土屋英昭
- Total Pages
  261
- Publisher
  培風館
- Data Source
  KAKENHI-PROJECT-17360163
[Book] 電子材料ハンドブック2006
- Author(s)
  小川真人(木村忠正, 八尾隆文, 奥村次徳, 豊田太郎編応用物理学会編)
- Total Pages
  20
- Publisher
  朝倉書店
- Data Source
  KAKENHI-PROJECT-17360163
[Journal Article] Modulations of thermal properties of graphene by strain-induced phonon engineering2017
- Author(s)
  Kento Tada, Takashi Funatani, Satoru Konabe, Kenji Sasaoka, Matsuto Ogawa, Satofumi Souma and Takahiro Yamamoto
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 56 Issue: 2 Pages: 025102-025102
- DOI
  10.7567/jjap.56.025102
- NAID
  210000147435
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03523, KAKENHI-PROJECT-25289102, KAKENHI-PROJECT-26390007
[Journal Article] Computational Study of effects of surface roughness and impurity scattering in Si junctionless transistors2015
- Author(s)
  M. Ichii, R. Ishida, H. Tsuchiya, Y. Kamakura, N. Mori, M. Ogawa
- Journal Title
  
  IEEE Trans. on Electron Devices,
  
  Volume: 62 Pages: 1255-1261
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289102
[Journal Article] 歪みグラフェンを用いたディラック電子エンジニアリング素子のシミュレーション2015
- Author(s)
  相馬聡文，田中未来，市原圭祐，迫田翔太郎，笹岡健二，小川真人
- Journal Title
  
  信学技法 IEICE Techincal Report
  
  Volume: SMD2015-89 Pages: 29-34
- Data Source
  KAKENHI-PROJECT-25289102
[Journal Article] Channel length scaling limits of III-V channel MOSFETs governed by source-drain direct tunneling2014
- Author(s)
  Shunsuke Koba, Masaki Ohmori, Yosuke Maegawa, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, Matsuto Ogawa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289102
[Journal Article] Channel Length Scaling Limits of III-V Channel MOSFETs Voverned by Source-Drain Direct Tunneling2014
- Author(s)
  S. Koba, M. Ohmori, Y. Maegawa, H. Tsuchiya, Y. Kamakura, N. Mori, and M. Ogawa
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656235
[Journal Article] Theoretical Performance Estimation of Silicen, Germanene, and Graphen Nanoribbon Field-Effect Transistors under Ballistic Transport2014
- Author(s)
  S. Kaneko, H. Tsuchiya, Y. Kamakura, N. Mori, and M. Ogawa
- Journal Title
  
  Applied Phys. Express
  
  Volume: 7 Pages: 35102-35102
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289102
[Journal Article] Pure spin current induced by adiabatic quantum pumping in zigzag-edged graphene nanoribbons2014
- Author(s)
  S. Souma and M. Ogawa
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 104 Pages: 1831031-4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289102
[Journal Article] Proposal of simplified model for absorption coefficients in quantum dot array based intermediate band solar cell structure,2014
- Author(s)
  A. Mehdipour, K. Sasaoka, M. Ogawa, and S. Souma
- Journal Title
  
  IEICE Electronics Express
  
  Volume: 11 Pages: 20140548-20140548
- NAID
  130004678218
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25289102
[Journal Article] Theoretical performance estimation of silicene, germanene, and graphene nanoribbon fieldeffect transistors under ballistic transport2014
- Author(s)
  Shiro Kaneko, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, Matsuto Ogawa
- Journal Title
  
  Applied Physics Express,
  
  Volume: 7 Pages: 35102-35102
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289102
[Journal Article] Effect of lateral strain on gate induced control of electrical conduction in single layer graphene device2014
- Author(s)
  Y. Ohmori, S. Souma, and M. Ogawa
- Journal Title
  
  J. Computational Electron.
  
  Volume: 12 Pages: 170-174
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656235
[Journal Article] Simulation-based design of a strained graphene field effect transistor incorporating the pseudo magnetic field effect,2014
- Author(s)
  S. Souma, M. Ueyama, and M. Ogawa
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 104 Pages: 213505-213505
- Data Source
  KAKENHI-PROJECT-24656235
[Journal Article] Pure spin current induced by adiabatic quantum pumping in zigzag-edged graphene nanoribbons,2014
- Author(s)
  S. Souma and M. Ogawa
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 104 Pages: 1831031-4
- Data Source
  KAKENHI-PROJECT-24656235
[Journal Article] Strain-induced modulation of anisotropic photoconductivity in graphene,2014
- Author(s)
  A. Mehdipour, K. Sasaoka, M. Ogawa, and S. Souma,
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Pages: 115103-115103
- NAID
  210000144581
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25289102
[Journal Article] Theoretical Performance Estimation of Silicen, Germanene, and Graphen Nanoribbon Field-Effect Transistors under Ballistic Transport2014
- Author(s)
  S. Kaneko, H. Tsuchiya, Y. Kamakura, N. Mori, and M. Ogawa
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 7 Pages: 35102-35102
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656235
[Journal Article] Proposal of simplified model for absorption coefficients in quantum dot array based intermediate band solar cell structure,2014
- Author(s)
  A. Mehdipour, K. Sasaoka, M. Ogawa, and S. Souma,
- Journal Title
  
  IEICE Electronics Express
  
  Volume: 11 Pages: 20140548-20140548
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24656235
[Journal Article] Strain-induced modulation of anisotropic photoconductivity in graphene,2014
- Author(s)
  A. Mehdipour, K. Sasaoka, M. Ogawa, and S. Souma,
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Pages: 115103-115103
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24656235
[Journal Article] Theoretical performance estimation of silicene, germanene, and graphene nanoribbon fieldeffect transistors under ballistic transport2014
- Author(s)
  Shiro Kaneko, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, Matsuto Ogawa
- Journal Title
  
  Applied Physics Express,
  
  Volume: 7 Pages: 35102-35102
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24656235
[Journal Article] Channel length scaling limits of III-V channel MOSFETs governed by source-drain direct tunneling2014
- Author(s)
  Shunsuke Koba, Masaki Ohmori, Yosuke Maegawa, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, Matsuto Ogawa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24656235
[Journal Article] Simulation-based design of a strained graphene field effect transistor incorporating the pseudo magnetic field effect,2014
- Author(s)
  S. Souma, M. Ueyama, and M. Ogawa
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 104 Pages: 213505-213505
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25289102
[Journal Article] Effect of lateral strain on gate induced control of electrical conduction in single layer graphene device2014
- Author(s)
  Y. Ohmai, S. Souma, and M. Ogawa
- Journal Title
  
  J. Computational Electon.
  
  Volume: 12 Pages: 170-174
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289102
[Journal Article] Computational Study on Band Structure Engineering using Graphene Nanomeshes2013
- Author(s)
  R. Sako, N. Hasegawa, H. Tsuchiya, and M. Ogawa
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 113 Pages: 143702-143702
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289102
[Journal Article] Computational Study on Band Structure Engineering using Graphene Nanomeshes2013
- Author(s)
  R. Sako, N. Hasegawa, H,. Tsuchiya, and M. Ogawa
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 113 Pages: 143702-143702
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656235
[Journal Article] Increased Subthreshold Current due to Source-Drain Direct Tunneling in Ultrashort Channel III-V Metal-Oxide-Semiconductor Field-Effet Transistors2013
- Author(s)
  S. Koba, M. Ohmori, Y. Maegawa, H. Tsuchiya, Y. Kamakura, N. Mori, and M. Ogawa
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 6 Pages: 64301-64301
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656235
[Journal Article] Atomistic Modeling of Electron-Phonon Interaction and Electron Mobility in Si nanowires2012
- Author(s)
  Y. Yamada, H. Tsuchiya, M. Ogawa
- Journal Title
  
  Journal of Applied Physics
  
  Volume: Vol. 111, No. 6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360171
[Journal Article] Performance Analysis of Junctionless Transistors Based on Monte Carlo Simulation2012
- Author(s)
  J. Choi,K. Nagai,H. Tsuchiya, M. Ogawa
- Journal Title
  
  Applied Physics Express
  
  Volume: V .lo 5 Pages: 54301-54301
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360171
[Journal Article] Theory of finite temperature Josephson transport through a ferromagnetic insulator2012
- Author(s)
  S. Nakamura, M. Ogawa, S. Souma
- Journal Title
  
  Physics Procedia
  
  Volume: Vol.27 Pages: 308-311
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360171
[Journal Article] Comparisons of Performance Potentials of Si and InAs Nanowire MOSFETs under Ballistic Transport2012
- Author(s)
  N. Takiguchi, S. Koba, H. Tsuchiya, M. Ogawa
- Journal Title
  
  IEEE Trans. on Electron Devices
  
  Volume: Vol. 59, No. 1 Pages: 206-211
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360171
[Journal Article] Fast Perturbative Treatment for Efficient Nano-Scale Device Simulation Based on Bridge-Function Pseudo-Spectral Method2012
- Author(s)
  Y. Saito, H. Fujikawa, S. Souma, M. Ogawa
- Journal Title
  
  Proc. of SISPAD 2012
  
  Pages: 384-387
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360171
[Journal Article] Comparisons of Performance Potentials of Si and InAs Nanowire MOSFETs Under Ballistic Transport2012
- Author(s)
  Naoya Takiguchi, Shunuske Koba, Hideaki Tsuchiya, Matsuto Ogawa
- Journal Title
  
  IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL.59, NO.1, JANUARY 2012
  
  Volume: 59 Pages: 206-211
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360171
[Journal Article] Comparisons of Performance Potentials of Si and InAs Nanowire MOSFETs under Ballistic Transport2012
- Author(s)
  TAKIGUCHI Naoya+;KOBA Shunsuke+;TSUCHIYA Hideaki;OGAWA Matsuto
- Journal Title
  
  IEEE Trans. on Electron Devices,
  
  Volume: Vol. 59, No. 1 Pages: 206-211
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656235
[Journal Article] Atomistic Modeling of Electron-Phonon Interaction and Electron Mobility in Si Nanowires2012
- Author(s)
  YAMADA Yoshihiro+;TSUCHIYA Hideaki;OGAWA Matsuto
- Journal Title
  
  Journal of Applied Physics,
  
  Volume: Vol. 111, No. 6,
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360171
[Journal Article] Atomistic Modeling of Electron-Phonon Interaction and Electron Mobility in Si Nanowires2012
- Author(s)
  YAMADA Yoshihiro+;TSUCHIYA Hideaki;OGAWA Matsuto
- Journal Title
  
  Journal of Applied Physics
  
  Volume: Vol. 111, No. 6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656235
[Journal Article] Analysis of tunneling characteristics through hetero interface of InAs/Si nanowire tunneling field effect transistors2012
- Author(s)
  Y. Miyoshi, M. Ogawa, S. Souma
- Journal Title
  
  Proc. of SISPAD 2012
  
  Pages: 368-371
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360171
[Journal Article] Comparisons of Performance Potentials of Si and InAs Nanowire MOSFETs under Ballistic Transport2012
- Author(s)
  TAKIGUCHI Naoya+;KOBA Shunsuke+;TSUCHIYA Hideaki;OGAWA Matsuto
- Journal Title
  
  IEEE Trans. on Electron Devices,
  
  Volume: Vol. 59, No. 1, Pages: 206-211
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360171
[Journal Article] Influence of Source/Drain Parasitic Resistance on Device Performance of Ultrathin Body III-V Channel Metal-Oxide-Semiconductor Field-Effct Transistors2011
- Author(s)
  Y. Maegawa, S. Koba, H. Tsuchiya, M. Ogawa
- Journal Title
  
  Applied Physics Express
  
  Volume: Vol. 4 Pages: 84301-84301
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360171
[Journal Article] Parity induced edge-current saturation and currentdistribution in zigzag-edged graphene nano-ribbon devices2011
- Author(s)
  S. Souma, M. Ogawa, T. Yamamoto, K. Watanabe
- Journal Title
  
  Journal of Computational Electronics
  
  Volume: Vol.10, No. 1-2 Pages: 35-43
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360171
[Journal Article] Analysis of geometrical structure and transport property in InAs/Si heterojunction nanowire tunneling field effect transistors2011
- Author(s)
  Yasuaki Miyoshi, Matsuto Ogawa, Satofumi Souma, Hajime Nakamura
- Journal Title
  
  Proc.Int.Conf.SISPAD 2011
  
  Pages: 227-230
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360171
[Journal Article] Influence of Band-Gap Opening on Ballistic Electron Transport in Bilayer Graphene and Graphene Nanoribbon FETs2011
- Author(s)
  R. Sako, H. Tsuchiya, M. Ogawa
- Journal Title
  
  IEEE Trans. on Electron Devices
  
  Volume: Vol. 58, No. 10 Pages: 3300-3306
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360171
[Journal Article] Bridge-Function Pseudospectral Method for Quantum Mechanical Simulatio of Nano-Scaled Devices2011
- Author(s)
  Yuta Saito, Takeshi Nakamori, Satofumi Souma, Matsuto Ogawa
- Journal Title
  
  Proc.Int.Conf.SISPAD 2011
  
  Pages: 311-314
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360171
[Journal Article] Impact of native interface asymmetry and electric field on spin-splitting in narrow gap semiconductor heterostructures2011
- Author(s)
  S. Souma, M. Ogawa
- Journal Title
  
  J. Korean Phys. Soc.
  
  Volume: Vol. 58, No.51 Pages: 1251-1255
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360171
[Journal Article] Effect of interface structure on current spin-polarization in narrow gapsemiconductor heterostructures2010
- Author(s)
  S.Souma M.Ogawa
- Journal Title
  
  Physica E : Low-dimensional Systems and Nanostructures
  
  Volume: 42 Pages: 2718-2721
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360171
[Journal Article] グラフェンナノエレクトロニクス素子開発に向けて素子シミュレーションと素子作成・物性評価-2010
- Author(s)
  相馬聡文, 小川真人, 山本貴博, 渡辺一之, 長汐晃輔
- Journal Title
  
  固体物理
  
  Volume: Vol. 45 No. 1 Pages: 63-76
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360171
[Journal Article] Effect of interface structure on current spin-polarization in narrow gap semiconductor heterostructures2010
- Author(s)
  S. Souma, M. Ogawa
- Journal Title
  
  Physica E.
  
  Volume: vol. 42, Issue 10 Pages: 2718-2721
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360171
[Journal Article] グラフェンナノエレクトロニクス素子開発に向けて-素子シミュレーションと素子作成・物性評価-2010
- Author(s)
  相馬聡文・小川真人・山本貴博・渡辺一之・長汐晃輔
- Journal Title
  
  固体物理
  
  Volume: 45 Pages: 63-76
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360171
[Journal Article] Comparisons of Performance Potentials of Silicon Nanowire and Graphene Nanoribbon MOSFETs Considering First-Principles Bandstructure Effects2010
- Author(s)
  H. Tsuchiya, H. Ando, S. Sawamoto, T. Maegawa, T. Hara, H. Yao, M. Ogawa
- Journal Title
  
  IEEE Trans. on Electron Devices
  
  Volume: Vol. 57, No. 2 Pages: 406-414
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360171
[Journal Article] Spin-polarization in InAs/AlSb double barrier resonant tunneling structures : influence of barrier material and interface structure2010
- Author(s)
  S.Souma M.Ogawa
- Journal Title
  
  Physics Procedia
  
  Volume: 3 Pages: 1287-1290
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360171
[Journal Article] Comparisons of Performance Potentials of Silicon Nanowire and Graphene Nanoribbon MOSFETs Considering First-Principles Bandstructure Effects2010
- Author(s)
  H.Tsuchiya, H.Ando, S.Sawamoto, T.Maegawa, T.Hara, H.Yao, M.Ogawa
- Journal Title
  
  IEEE Trans.on Electron Devices
  
  Volume: 57 Pages: 406-414
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360171
[Journal Article] Spin-polarization in InAs/AlSb double barrier resonant tunneling structures: influence of barrier material and interface structure2010
- Author(s)
  S. Souma, M. Ogawa
- Journal Title
  
  Physics Procedia
  
  Volume: Vol.3 Issue 2 Pages: 1287-1290
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360171
[Journal Article] Quantum Transport Simulation of Silicon Nanowire Transistors Based on Direct Solution Approach of the Wigner Transport Equation2009
- Author(s)
  Yoshihiro Yamada, Hideaki Tsuchiya, Matsuto Ogawa
- Journal Title
  
  IEEE Trans.on Electron Devices 56
  
  Pages: 1391-1401
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360171
[Journal Article] A First Principles Study on Tunneling Current Through Si/SiO2/Si Structures2009
- Author(s)
  Yoshihiro Yamada, Hideaki Tsuchiya, Matsuto Ogawa
- Journal Title
  
  J.Appl.Phys 105
  
  Pages: 83702-83702
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360171
[Journal Article] Enhancement of Ballistic Efficiency due to Source to Channel Heterojunction Barrier in Si Metal Oxide Semiconductor Field Effect Transistors2009
- Author(s)
  Wei Wang, H. Tsuchiya,M. Ogawa
- Journal Title
  
  J. Appl. Phys.
  
  Volume: Vol. 106, No. 2 Pages: 24515-24515
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360171
[Journal Article] Strain Effects on Electronic Band Structures in Nanoscaled Silicon : From Bulk to Nanowire2009
- Author(s)
  T.Maegawa, T.Yamauchi, T.Hara, H.Tsuchiya, M.Ogawa
- Journal Title
  
  IEEE Trans.On Electron Devices 56
  
  Pages: 553-559
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360171
[Journal Article] Device Physics and Simulation Techniques for Nanoscale SOI-MOSFETs2009
- Author(s)
  Wei Wang, Hideaki Tsuchiya, Matsuto Ogawa
- Journal Title
  
  ECS Transactions 19
  
  Pages: 345-350
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360171
[Journal Article] Enhancement of Ballistic Efficiency due to Source to Channel Heterojunction Barrier in Si Metal Oxide Semiconductor Field Effect Transistors2009
- Author(s)
  Wei Wang, Hideaki Tsuchiya, Matsuto Ogawa
- Journal Title
  
  J.Appl.Phys 106
  
  Pages: 24515-24515
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360171
[Journal Article] Non-equilibrium Green's function method for modeling quantum electron transport in nano-scale devices with anisotropic multiband structure2008
- Author(s)
  H. Fitriawan, M. Ogawa S. Souma, T. Miyoshi
- Journal Title
  
  J. Mat. Sci. : Materials in Electronics
  
  Pages: 107-110
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17360163
[Journal Article] Numerical simulation of electronic transport in zigzag-edged graphenenano-ribbon devices2008
- Author(s)
  S. Souma, M. Ogawa, T. Yamamoto, K. Watanabe
- Journal Title
  
  J. Comp. Electron. 7
  
  Pages: 390-393
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17360163
[Journal Article] Full-band simulation of nano-scale MOSFETs based on a non-equili-rium Green's function method2008
- Author(s)
  H. Fitriawan, M. Ogawa
- Journal Title
  
  IEICE Transactions on Electronics E91-C
  
  Pages: 105-109
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17360163
[Journal Article] Fullband simulation of nano-scale MOSFETs based on anon-equilibrium Green's function method2008
- Author(s)
  H. Fitriawan, M. Ogawa
- Journal Title
  
  IEICE Transactions on Electronics E91-C
  
  Pages: 105-109
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17360163
[Journal Article] Non-equilibrium Green's function method for modeling quantum electron transport in nano-scale devices with anisotropic multiband structure2008
- Author(s)
  H. Fitriawan, M. Ogawa
- Journal Title
  
  J. Mat. Sci.: Materials in Electronics 19
  
  Pages: 107-110
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17360163
[Journal Article] Quantum electron transport modeling in double-gated MOS FETs based on multiband non-equilibrium Green's function method2007
- Author(s)
  H. Fitriawan, M. Ogawa
- Journal Title
  
  Physica E 42
  
  Pages: 245-248
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17360163
[Journal Article] Non-Equilibrium Green's Function Method for Modelling Quantum Electron Transport in Nano-Scale Devices with Anisotropic Multiband Structure2006
- Author(s)
  H.Fitriawan, M.Ogawa, T.Miyoshi
- Journal Title
  
  Proc. 6^<th> International Conference on Materials for Microelectronics and Nanoengineering
  
  Pages: 32-34
- Data Source
  KAKENHI-PROJECT-17360163
[Journal Article] Atomistic Quantum Simulation of Nano-Scale Devices Based on Non-Equilibrium Green's Function2006
- Author(s)
  H.Fitriawan, M.Ogawa, T.Miyoshi
- Journal Title
  
  Proceedings of the 2006 International Meeting for Future of Electron Devices
  
  Pages: 23-24
- Data Source
  KAKENHI-PROJECT-17360163
[Journal Article] Investigation of Electronic Transport in Carbon Nanotubes Using Green's-Function Method2006
- Author(s)
  T.Umegaki, M.Ogawa, T.Miyoshi
- Journal Title
  
  J. Appl. Phys. 99・4
- Data Source
  KAKENHI-PROJECT-17360163
[Journal Article] Investigation of Electronic Transport in Carbon Nanotubes Using Green's Function Method2006
- Author(s)
  T.Umegaki, M.Ogawa, T.Miyoshi
- Journal Title
  
  J.Appl.Phys. 99・2
- Data Source
  KAKENHI-PROJECT-17360163
[Journal Article] Analysis of Band-Pass Filter Characteristics in a Ferrite Device with Carbon Nanotube Electrodes2005
- Author(s)
  T.Umegaki, M.Ogawa, T.Miyoshi
- Journal Title
  
  ACES Journal 20・3
  
  Pages: 221-230
- Data Source
  KAKENHI-PROJECT-17360163
[Patent] 特許2013
- Inventor(s)
  喜多隆、小川真人
- Industrial Property Rights Holder
  喜多隆、小川真人
- Industrial Property Rights Type
  特許
- Filing Date
  2013-07-27
- Acquisition Date
  2014-03-20
- Data Source
  KAKENHI-PROJECT-25289102
[Patent] 特許2012
- Inventor(s)
  喜多隆，小川真人
- Industrial Property Rights Holder
  喜多隆，小川真人
- Industrial Property Rights Type
  特許
- Filing Date
  2012-07-27
- Acquisition Date
  2014-03-20
- Data Source
  KAKENHI-PROJECT-24656235
[Presentation] 二次元原子膜を用いた光検出器に関する理論解析2017
- Author(s)
  土井信行、福富惇一朗、笹岡健二、小川真人、相馬聡文
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  神奈川県横浜市・パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-25289102
[Presentation] 引張によるグラフェンの熱特性変調2017
- Author(s)
  小鍋哲, 多田健人, 船谷宜嗣, 笹岡健二, 小川真人, 相馬聡文, 山本貴博
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  神奈川県横浜市・パシフィコ横浜
- Year and Date
  2017-03-15
- Data Source
  KAKENHI-PROJECT-25289102
[Presentation] グラフェン状物質の面内ヘテロ構造を用いたFETの性能予測シミュレーション2016
- Author(s)
  橋本悠希、市原圭祐、田中未来、笹岡健二、小川真人、相馬聡文
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  新潟市・朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-25289102
[Presentation] 任意の方向に歪みが印加されたグラフェンの量子ダイナミクスシミュレーション2016
- Author(s)
  名村太希、迫田翔太郎、笹岡健二、小川真人、相馬聡文
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  新潟市・朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-25289102
[Presentation] 歪印加されたグラフェンナノリボンの過渡電気伝導現象の数値解析2016
- Author(s)
  加藤大喜，笹岡健二，小川真人，相馬聡文
- Organizer
  第６３回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス(東京都・大田区)
- Year and Date
  2016-03-21
- Data Source
  KAKENHI-PROJECT-25289102
[Presentation] サブ10nmゲート長III-VnMOSFETにおけるソース・ドレイントンネル電流のチャネル電子有効質量依存性2016
- Author(s)
  片木慎也，大森正規，土屋英昭，小川真人
- Organizer
  第６３回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス(東京都・大田区)
- Year and Date
  2016-03-21
- Data Source
  KAKENHI-PROJECT-25289102
[Presentation] 知りケインおよびゲルマナンをチャネルとするCMOSトランジスタのバリスティック性能解析2016
- Author(s)
  金子志郎，岡直左，土屋英昭，小川真人
- Organizer
  第６３回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス(東京都・大田区)
- Year and Date
  2016-03-21
- Data Source
  KAKENHI-PROJECT-25289102
[Presentation] サブ10nmチャネル長SiナノワイヤMOSFETの量子輸送シミュレーション2016
- Author(s)
  平井佑昴，土屋英昭，小川真人
- Organizer
  第６３回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス(東京都・大田区)
- Year and Date
  2016-03-21
- Data Source
  KAKENHI-PROJECT-25289102
[Presentation] 六方晶系BN基板上グラフェンの電子輸送特性2016
- Author(s)
  外田祐也、平井秀樹、相馬聡文、小川真人
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  新潟市・朱鷺メッセ
- Year and Date
  2016-09-16
- Data Source
  KAKENHI-PROJECT-25289102
[Presentation] グラフェンナノリボンの電子輸送特性に現れる過渡振動現象に関する理論的研究2016
- Author(s)
  中井雄紀、石橋純、加藤大喜、笹岡健二、小川真人、相馬聡文
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  新潟市・朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-25289102
[Presentation] グラフェンの歪み/無歪み繊維領域におけるガウス波束の伝搬に関する量子ダイナミクスシミュレーション2016
- Author(s)
  迫田翔太郎，笹岡健二，小川真人，相馬聡文
- Organizer
  第６３回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス(東京都・大田区)
- Year and Date
  2016-03-21
- Data Source
  KAKENHI-PROJECT-25289102
[Presentation] 歪グラフェンp-n接合の整流特性に関する量子輸送シミュレーション2016
- Author(s)
  市原圭祐，笹岡健二，小川真人，相馬聡文
- Organizer
  第６３回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス(東京都・大田区)
- Year and Date
  2016-03-21
- Data Source
  KAKENHI-PROJECT-25289102
[Presentation] Computational study on the performance of locally strained graphene devices: transport and wave packet dynamics simulations2016
- Author(s)
  Satofumi Souma, Kenji Sasaoka, Keisuke Ichihara, Shotaro Sakoda, Yuuki Hashimoto, Taiki Namura and Matsuto Ogawa
- Organizer
  19th International Conference on Superlattices, Nanostructures and Nanodevices
- Place of Presentation
  City University of Hong Kong, Hong Kong
- Year and Date
  2016-07-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289102
[Presentation] シリケイン及びゲルマナンMOSFETのバリスティック輸送特性の結晶方位依存性2016
- Author(s)
  岡直左、兼古志郎、相馬聡文、小川真人
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  新潟市・朱鷺メッセ
- Year and Date
  2016-09-14
- Data Source
  KAKENHI-PROJECT-25289102
[Presentation] Siナノワイヤ型ジャンクションレストランジスタの準バリスティック輸送特性の解析2016
- Author(s)
  清水良馬、一居雅人、相馬聡文、小川真人
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  新潟市・朱鷺メッセ
- Year and Date
  2016-09-14
- Data Source
  KAKENHI-PROJECT-25289102
[Presentation] ディラック電子をキャリアとする電界効果トランジスタのスイッチング性能に関する理論解析2016
- Author(s)
  田中未来，笹岡健二，小川真人，相馬聡文
- Organizer
  応用物理学会関西支部平成２７年度第３回講演会
- Place of Presentation
  大阪府立大学中百舌鳥キャンパス（大阪府・大阪市）
- Year and Date
  2016-03-20
- Data Source
  KAKENHI-PROJECT-25289102
[Presentation] 解放系シュレーディンガー方程式を用いた歪アームチェア型グラフェンナノリボンの時間依存電気伝導特製の解析2015
- Author(s)
  加藤大喜，笹岡健二，小川真人，相馬聡文
- Organizer
  第７６回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場(愛知県・名古屋市)
- Year and Date
  2015-09-15
- Data Source
  KAKENHI-PROJECT-25289102
[Presentation] 歪グラフェンp-n接合の電気伝導特性に関する量子輸送シミュレーション2015
- Author(s)
  市原圭祐，笹岡健二，小川真人，相馬聡文
- Organizer
  第７６回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場(愛知県・名古屋市)
- Year and Date
  2015-09-15
- Data Source
  KAKENHI-PROJECT-25289102
[Presentation] 時間依存波束伝搬法を用いた歪グラフェンの量子ダイナミクスシミュレーション2015
- Author(s)
  迫田翔太郎，笹岡健二，小川真人，相馬聡文
- Organizer
  第７６回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場(愛知県・名古屋市)
- Year and Date
  2015-09-15
- Data Source
  KAKENHI-PROJECT-25289102
[Presentation] 絶縁基板上グラフェンの高電界電子輸送特性2015
- Author(s)
  平井秀樹，土屋英昭，小川真人
- Organizer
  第７６回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場(愛知県・名古屋市)
- Year and Date
  2015-09-15
- Data Source
  KAKENHI-PROJECT-25289102
[Presentation] モンテカルロ法を用いたSiダブルゲート構造MOSFETの準バリスティック輸送係数の抽出2014
- Author(s)
  土屋　英昭, 石田　良馬, 鎌倉　良成, 森　伸也, 宇野　重康, 小川　真人
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会
- Place of Presentation
  機会振興会館、東京
- Year and Date
  2014-11-12
- Data Source
  KAKENHI-PROJECT-25289102
[Presentation] モンテカルロシミュレーションによるSiマルチゲート構造MOSFETの準バリスティック輸送特性解析2014
- Author(s)
  石田　良馬, 木場　隼介, 土屋　英昭, 鎌倉　良成, 森　伸也, 宇野　重康, 小川　真人
- Organizer
  応用物理学会関西支部平成26年度第2回講演会
- Place of Presentation
  神戸大学、神戸市
- Year and Date
  2014-11-12
- Data Source
  KAKENHI-PROJECT-24656235
[Presentation] Quantum Dynamical Simulation of Photo-Induced Graphene Switch2013
- Author(s)
  T. Akiyama, M. Ueyama, E. Nishimura, M. Ogawa, and S. Souma
- Organizer
  International Workshop on Computational Eelctronics 2013
- Place of Presentation
  奈良公会堂
- Data Source
  KAKENHI-PROJECT-25289102
[Presentation] Quantu mDynamical Simulation of Photo-Induced Graphene Switch2013
- Author(s)
  T. Akiyama, M. Ueyama, E. Nishimura, M. Ogawa, and S. Souma
- Organizer
  Int'l Workshop on Compt. Electron. 2013
- Place of Presentation
  奈良公会堂
- Data Source
  KAKENHI-PROJECT-24656235
[Presentation] Effect　of Axial Strain on Switching Behavior of Carbon Nanotube Tunneling Field Effect Transistors2013
- Author(s)
  T. Nakano, H. Nagai, S. Souma, and M. Ogawa
- Organizer
  International Workshop on Computational Eelctronics 2013
- Place of Presentation
  奈良公会堂
- Data Source
  KAKENHI-PROJECT-25289102
[Presentation] Effect of lateral strain on electronic transport in graphene: interplay between band gap formation and pseudo magnetic field effect2013
- Author(s)
  M. Ueyama, M. Ogawa, and S. Souma
- Organizer
  5th Int'l Conf. on Recent Progress in Graphene Research 2013
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-25289102
[Presentation] Effect of Axial Strain on Switching Behavior of Carbon Nanotube Tunneling Field Effect Transistors2013
- Author(s)
  Ｔ. Nakano, H. Nagai, M. Ogawa, and S. Souma
- Organizer
  Int'l Workshop on Compt. Electron. 2013
- Place of Presentation
  奈良公会堂
- Data Source
  KAKENHI-PROJECT-24656235
[Presentation] Performance projections of III-V channel nanowire nMOSFETs in the ballistic transport limit2013
- Author(s)
  K. Shimoida, H. Tsuchiya, Y. Kamakura, N. Mori, and M. Ogawa
- Organizer
  Int'l Conf. on Solid St. Device and Materials (SSDM2013)
- Place of Presentation
  福岡
- Data Source
  KAKENHI-PROJECT-24656235
[Presentation] Effect of lateral strain on wlwctronic transport in graphene: interplay between band gap formation and pseudo magnetic field effet2013
- Author(s)
  M. Ueyama, M. Ogawa, and S. Souma
- Organizer
  5th Int'l Conf. on Recent Progress in Graphene Research 2013
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-24656235
[Presentation] Performance projections of III-V channel nanowire nMOSFETs in the ballistic transport limit2013
- Author(s)
  K. Shimoida, H. Tsuchiya, Y. Kamakura, N. Mori, and M. Ogawa
- Organizer
  Int'l Conf on Solid State Devices and Materials (SSDM2013)
- Place of Presentation
  福岡
- Data Source
  KAKENHI-PROJECT-25289102
[Presentation] Analysis of Tunneling Characteristics through Hetero Interface of InAs/Si Nanowire Tunneling Field Effect Transistors2012
- Author(s)
  Y. Miyoshi, M. Ogawa, S. Souma, H. Nakamura
- Organizer
  SISPAD2012
- Place of Presentation
  Denver Co.
- Data Source
  KAKENHI-PROJECT-24656235
[Presentation] Analysis of Tunneling Characteristics through Hetero Interface of InAs/Si Nanowire Tunneling Field Effect Transistors2012
- Author(s)
  Y. Miyoshi, M. Ogawa, S. Souma, H. Nakamura*
- Organizer
  SISPAD 2012
- Place of Presentation
  Denver Co.
- Data Source
  KAKENHI-PROJECT-21360171
[Presentation] Fast Perturbative Treatment for Efficient Nano-Scale Device Simulation Based on Bridge-Function Pseudo-Spectral Method2012
- Author(s)
  Y. Saito, S. Souma, M. Ogawa
- Organizer
  SISPAD 2012
- Place of Presentation
  Denver Co.
- Data Source
  KAKENHI-PROJECT-24656235
[Presentation] Fast Perturbative Treatment for Efficient Nano-Scale Device Simulation Based on Bridge-Function Pseudo-Spectral Method2012
- Author(s)
  Y. Saito, S. Souma, M. Ogawa
- Organizer
  SISPAD 2012
- Place of Presentation
  Denver Co.
- Data Source
  KAKENHI-PROJECT-21360171
[Presentation] Influence of electromagnetic field on the real-time electronic dynamics in graphene2010
- Author(s)
  K.Saeki, M.Ogawa, S.Souma
- Organizer
  2010 International Meeting for Future Electronic Devices in Kansai
- Place of Presentation
  Osaka
- Year and Date
  2010-05-13
- Data Source
  KAKENHI-PROJECT-21360171
[Presentation] 擬スペクトル法を用いたシュレディンガー・ポアソン方程式の高精度・高効率解法2010
- Author(s)
  中森剛史, 相馬聡文, 小川真人
- Organizer
  日本物理学会
- Place of Presentation
  大阪府立大学中百舌鳥
- Year and Date
  2010-09-24
- Data Source
  KAKENHI-PROJECT-21360171
[Presentation] 2D Quantum Mechanical Simulation of Gate-Leakage Current in Double-Gate n-MOSFETs2009
- Author(s)
  S.Muraoka, R.Mukai, S.Souma, M.Ogawa
- Organizer
  International Conference on Simulation of Semiconductor Processes and Devices
- Place of Presentation
  San Diego, USA
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21360171
[Presentation] 第一原理バリスティックシミュレーションによるSiナノワイヤトランジスタの性能予測2009
- Author(s)
  澤本俊, 前川忠志, 原孟史, 土屋英昭, 小川真人
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-08
- Data Source
  KAKENHI-PROJECT-21360171
[Presentation] 第一原理バリスティックシミュレーションによる Si ナノワイヤトランジスタの性能予測2009
- Author(s)
  澤本俊,前川忠志,原孟史土屋英昭,小川真人
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-08-09
- Data Source
  KAKENHI-PROJECT-21360171
[Presentation] Analysis of direct tunneling current from quasi-bound states in n-MOSFET based on non-equilibrium Green's function2008
- Author(s)
  S. Muraoka, S. Souma, andM. Ogawa
- Organizer
  2008 Int. Conf. Simulation of Semicon. Process and Devices
- Place of Presentation
  神奈川県箱根町
- Year and Date
  2008-09-10
- Data Source
  KAKENHI-PROJECT-17360163
[Presentation] Numerical simulation of the electronic transport in graphene nano-ribbon devices2007
- Author(s)
  S. Souma, M. Ogawa
- Organizer
  12th Int. Workshop on Computational Electronics
- Place of Presentation
  USA
- Data Source
  KAKENHI-PROJECT-17360163
[Presentation] Photoconductivity-based strain sensing in graphene
- Author(s)
  Amir Mehdipour, Kenji Sasaoka, Matsuto Ogawa, and Satofumi Souma
- Organizer
  International Symposium on Recent Progress of Photonic Devices and Materials
- Place of Presentation
  Kobe University (Kobe)
- Year and Date
  2014-11-13 – 2014-11-14
- Data Source
  KAKENHI-PROJECT-24656235
[Presentation] ジャンクションレストランジスタの表面ラフネス散乱及び不純物散乱の影響
- Author(s)
  一居　雅人, 土屋　英昭, 鎌倉　良成, 森　伸也, 小川　真人
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス札幌市
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25289102
[Presentation] Numerical simulation of current noise caused by potential fluctuation in nanowire FET with an oxide trap
- Author(s)
  Yuki Furubayashi, Matsuto Ogawa, Satofumi Souma
- Organizer
  2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD2014)
- Place of Presentation
  Mielparque Yokohama, Yokohama, Japan
- Year and Date
  2014-09-09 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-25289102
[Presentation] Extraction of Quasi-Ballistic Transport Parameters in Si Double-Gate MOSFETs Based on Monte Carlo Method
- Author(s)
  Ryoma Ishida, Shunsuke Koba, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, Shigeyasu Uno, Matsuto Ogawa
- Organizer
  2014 International Conference on Simulation of Semiconductor Processes and Devices
- Place of Presentation
  Mielparque Yokohama, Yokohama, Japan
- Year and Date
  2014-09-09 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-24656235
[Presentation] 強結合分子動力学方を用いたグラフェンナノリボンの機械的変形と電子状態に関するシミュレーション
- Author(s)
  貝野昭造、相馬聡文、小川真人
- Organizer
  電子情報通信学会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-25289102
[Presentation] 今日結合分子動力学法を用いたグラフェンナノリボンの機械的変形と電子状態に関するシミュレーション
- Author(s)
  貝野昭造、相馬聡文、小川真人
- Organizer
  電子情報通信学会
- Place of Presentation
  東京機械振興会館
- Data Source
  KAKENHI-PROJECT-24656235
[Presentation] モンテカルロ法を用いたSiダブルゲート構造MOSFETの準バリスティック輸送係数の抽出
- Author(s)
  土屋　英昭, 石田　良馬, 鎌倉　良成, 森　伸也, 宇野　重康, 小川　真人
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会
- Place of Presentation
  機会振興会館、東京
- Year and Date
  2014-11-06 – 2014-11-07
- Data Source
  KAKENHI-PROJECT-24656235
[Presentation] Photoconductivity-based strain sensing in graphene
- Author(s)
  Amir Mehdipour, Kenji Sasaoka, Matsuto Ogawa, and Satofumi Souma
- Organizer
  International Symposium on Recent Progress of Photonic Devices and Materials
- Place of Presentation
  Kobe University (Kobe)
- Year and Date
  2014-11-13 – 2014-11-14
- Data Source
  KAKENHI-PROJECT-25289102
[Presentation] Numerical simulation of current noise caused by potential fluctuation in nanowire FET with an oxide trap
- Author(s)
  Yuki Furubayashi, Matsuto Ogawa, Satofumi Souma
- Organizer
  2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD2014)
- Place of Presentation
  Mielparque Yokohama, Yokohama, Japan
- Year and Date
  2014-09-09 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-24656235
[Presentation] Extraction of Quasi-Ballistic Transport Parameters in Si Double-Gate MOSFETs Based on Monte Carlo Method
- Author(s)
  Ryoma Ishida, Shunsuke Koba, Hideaki Tsuchiya, Yoshinari Kamakura, Nobuya Mori, Shigeyasu Uno, Matsuto Ogawa
- Organizer
  2014 International Conference on Simulation of Semiconductor Processes and Devices 2014/09/09-11
- Place of Presentation
  Mielparque Yokohama, Yokohama, Japan
- Year and Date
  2014-09-09 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-25289102

1. SOUMA Satofumi (20432560)

# of Collaborated Projects: 3 results

# of Collaborated Products: 51 results
2. HIYAMIZU Satoshi (50201728)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. SHIMOMURA Satoshi (30201560)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. KITADA Takahiro (90283738)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. OGURA Mutsuo (90356717)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. SUGAYA Takeyoshi (60357259)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. HONGO Shozo (00029232)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 三好旦六 (20031114)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. YAMAMOTO Takahiro

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
10. KONABE Satoru

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
11. SASAOKA Kenji

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

OGAWA Matsuto 小川 真人

小川 真人 オカ゛ワ マツト

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Development of an Atomistic Device Simulatior by High Performance ComputerPrincipal Investigator

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Development of a Device Simulator Based on an Atomistic Large Scale CalculationPrincipal Investigator

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Design of New Structure and New Material Devices by a Quantum Transport Simulator in Ultimately Scaled VLSIsPrincipal Investigator

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Study on the Optimal Design of Molecular Transistors in Next Generation Based on a Quantum Mechanical SimulationPrincipal Investigator

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Fabrication of long-wavelength-range quantum wire lasers

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Study on Web Hub System of Nano-Eledronic Device ModelingPrincipal Investigator

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磁性半導体量子構造を用いたブロッホウォールメモリの研究Principal Investigator

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Basic Research of a Spin Transistor Based on the Quantum Transport in an Inhomogeneous Magnetic FieldPrincipal Investigator

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量子トンネル効果を利用した超高速受光素子に関する研究

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Research on Instantaneous Electrical and Optical Characterization systems for Alloy Semiconductors

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[Book] ナノエレクトロニクスの基礎2007

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[Book] 電子材料ハンドブック2006

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[Journal Article] Modulations of thermal properties of graphene by strain-induced phonon engineering2017

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OGAWA Matsuto 小川真人

小川真人オカ゛ワマツト