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Katayama Ryuji  片山 竜二

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KATAYAMA Ryuji  片山 竜二

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Researcher Number 40343115
Other IDs
Affiliation (Current) 2025: 大阪大学, 大学院工学研究科, 教授
Affiliation (based on the past Project Information) *help 2022 – 2024: 大阪大学, 大学院工学研究科, 教授
2016 – 2021: 大阪大学, 工学研究科, 教授
2009 – 2015: 東北大学, 金属材料研究所, 准教授
2007 – 2008: 東京大学, 大学院・新領域創成科学研究科, 助教
2002 – 2005: The University of Tokyo, Graduate School of Frontier Sciences, Research Associate, 大学院・新領域創成科学研究科, 助手
Review Section/Research Field
Principal Investigator
Science and Engineering / Applied optics/Quantum optical engineering / Medium-sized Section 30:Applied physics and engineering and related fields / Applied physics and engineering and related fields / Optical engineering, Photon science / Crystal engineering
Except Principal Investigator
Applied materials science/Crystal engineering / Basic Section 30020:Optical engineering and photon science-related / Applied materials science/Crystal engineering / Science and Engineering
Keywords
Principal Investigator
第二高調波発生 / 非線形光学 / 窒化物半導体 / エピタキシャル成長 / 量子光学 / GaN / 光パラメトリック下方変換 / 波長変換素子 / 光導波路 / パルスレーザ堆積 … More / 反応性スパッタリング / パルススパッタ / 表面活性化接合 / MOVPE / 結晶面方位 / μLED / ウエハ接合 / 極性反転構造 / 表面活性化ウエハ接合 / モノリシック共振器 / モノリシック集積 / モノリシック微小共振器 / ワイドギャップ半導体 / 微小共振器 / モノリシック / 量子計算 / 強誘電体 / 自発パラメトリック下方変換 / パルスレーザー堆積 / 酸化ジルコニウム / 窒化アルミニウム / 周期的極性反転 / 擬似位相整合 / スパッタリング / 有機金属気相成長 / 分子線エピタキシー / 酸化チタン / 窒化ガリウム / RF-MBE / KOHエッチング / ケルビンフォース顕微鏡 / 格子極性反転構造 / AlN緩衝層 / 低温窒化 / RF-MBE法 / N極性 / Ga極性 … More
Except Principal Investigator
窒化物半導体 / MOVPE / RF-MBE / エピタキシャル成長 / GaAsN / 半導体物性 / InGaAsN / InGaPN / MBE / 立方晶窒化物半導体 / MBE、エピタキシャル / 応用光学・量子光工学 / 単一光子 / 光物性 / 結晶成長 / 結晶工学 / ジメチルヒドラジン / エピタキシャル / 有機金属気相成長 / 光量子コンピュータ / 光子対発生 / 単一モードレーザ / モノリシック光集積デバイス / 量子情報処理 / 非線形光学デバイス / 半導体レーザ / heterostructure / photoreflectance / cubic indium nitride / cubic gallium nitride / cubic nitride semiconductors / nitride semiconductors / 深い準位 / 立法晶AlGaN / 立法晶GaN / 選択成長 / GaAs / GaN / 立方晶AlGaN / 立方晶GaN / 窒化物混晶半導体 / ヘテロ構造 / フォトリフレクタンス / 立方晶窒化インジウム / 立方晶窒化ガリウム / huge bandgap bowing / slloy semiconductors / diluted nitride alloy / 巨大ボウイング / GaNAs / GaNP / 巨大バンドギャッブボウイング / InAsN / 巨大バンドギャップボウイング / 混晶半導体 / III-V-N型窒化物混晶 / 等電子トラップ / 原子層ドーピング / 励起子分子 / 応用光学・量子光光学 / 量子もつれ光子対 / 量子光学 / 半導体 / III族窒化物半導体 / 立方晶III族窒化物 / III-N半導体 / 立方晶III-N半導体 / MBE,エピタキシャル / 応用光学・量子光工学MBE / 窒化インジウム / 希薄窒化物 / 自己形成量子ドット / 量子ドット / 量子ナノ構造 / III-V-N混晶 / 希薄窒化物半導体 / 分離供給法 / アダクト / 成長 / InN Less
  • Research Projects

    (18 results)
  • Research Products

    (483 results)
  • Co-Researchers

    (21 People)
  •  光量子コンピューティング用窒化物半導体モノリシック光集積デバイスに関する研究

    • Principal Investigator
      上向井 正裕
    • Project Period (FY)
      2023 – 2026
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 30020:Optical engineering and photon science-related
    • Research Institution
      Osaka University
  •  Development of semiconductor laser pumped nitride semiconductor waveguide nonlinear optical devices for squeezed light generation

    • Principal Investigator
      Uemukai Masahiro
    • Project Period (FY)
      2019 – 2022
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 30020:Optical engineering and photon science-related
    • Research Institution
      Osaka University
  •  Development of High-Throughput Micro-LED Fabrication Process Utilizing Crystallographic Orientation Modulated TemplatesPrincipal Investigator

    • Principal Investigator
      Katayama Ryuji
    • Project Period (FY)
      2019 – 2020
    • Research Category
      Grant-in-Aid for Challenging Research (Exploratory)
    • Review Section
      Medium-sized Section 30:Applied physics and engineering and related fields
    • Research Institution
      Osaka University
  •  Exploration of Fabrication Technology, Design of Physical Property and Functionality of Polarity-Controlled Nitride Semiconductor Singular StructurePrincipal Investigator

    • Principal Investigator
      片山 竜二
    • Project Period (FY)
      2019 – 2020
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
    • Review Section
      Science and Engineering
    • Research Institution
      Osaka University
  •  Development of Quantum Computing System Based on Ferroelectric/Paraelectric Stacked WaveguidesPrincipal Investigator

    • Principal Investigator
      KATAYAMA RYUJI
    • Project Period (FY)
      2017 – 2021
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Optical engineering, Photon science
    • Research Institution
      Osaka University
  •  Development of monolithic cavity wavelength converter made of widegap semiconductorsPrincipal Investigator

    • Principal Investigator
      Katayama Ryuji
    • Project Period (FY)
      2017 – 2018
    • Research Category
      Grant-in-Aid for Challenging Research (Exploratory)
    • Research Field
      Applied physics and engineering and related fields
    • Research Institution
      Osaka University
  •  Nonlinear Optical Device Application of Polarity-Controlled Nitride Semiconductor Singular StructurePrincipal Investigator

    • Principal Investigator
      片山 竜二
    • Project Period (FY)
      2017 – 2018
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
    • Review Section
      Science and Engineering
    • Research Institution
      Osaka University
  •  Development of Compact Deep-UV Laser Based on Wavelength Converter Integrated with Blue Laser Light SourcesPrincipal Investigator

    • Principal Investigator
      Katayama Ryuji
    • Project Period (FY)
      2014 – 2016
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Crystal engineering
    • Research Institution
      Osaka University
      Tohoku University
  •  Generation and control of quantum correlated photons from atomic-layer doped semiconductors

    • Principal Investigator
      YAGUCHI Hiroyuki
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Saitama University
  •  Research on quantum optical application of novel polar widegap semiconductorsPrincipal Investigator

    • Principal Investigator
      KATAYAMA Ryuji
    • Project Period (FY)
      2011 – 2013
    • Research Category
      Grant-in-Aid for Young Scientists (A)
    • Research Field
      Applied optics/Quantum optical engineering
    • Research Institution
      Tohoku University
  •  Growth of high phase purity cubic III-nitride semiconductor thin films and application of their heterostructures

    • Principal Investigator
      ONABE Kentaro
    • Project Period (FY)
      2010 – 2012
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      The University of Tokyo
  •  有機N原料によるInNおよび関連混晶薄膜のMOVPE成長

    • Principal Investigator
      尾鍋 研太郎
    • Project Period (FY)
      2009 – 2010
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      The University of Tokyo
  •  Single Photon Generation from locally doped semiconductors

    • Principal Investigator
      YAGUCHI Hiroyuki
    • Project Period (FY)
      2009 – 2011
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Saitama University
  •  有機N原料によるInNのMOVPE成長

    • Principal Investigator
      ONABE Kentaro
    • Project Period (FY)
      2007 – 2008
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      The University of Tokyo
  •  Growth and material applications of narrow-bandgap III-V-N alloy semiconductor quantum nano-structures

    • Principal Investigator
      ONABE Kentaro
    • Project Period (FY)
      2007 – 2009
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      The University of Tokyo
  •  窒化物半導体格子極性反転へテロ構造の作製と非線形光学素子応用Principal Investigator

    • Principal Investigator
      片山 竜二
    • Project Period (FY)
      2004 – 2005
    • Research Category
      Grant-in-Aid for Young Scientists (B)
    • Research Field
      Applied optics/Quantum optical engineering
    • Research Institution
      The University of Tokyo
  •  Cubic Nitride Semiconductor Heterostructures and Their Application to Optical and Electronic Devices

    • Principal Investigator
      ONABE Kentaro
    • Project Period (FY)
      2000 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      The University of Tokyo
  •  Huge Bandgap-Bowing Effect in III-V-N Type Nitride Alloy Semiconductors and its Applications

    • Principal Investigator
      ONABE Kentaro
    • Project Period (FY)
      1999 – 2002
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      The University of Tokyo

All 2024 2023 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 Other

All Journal Article Presentation Patent

  • [Journal Article] Demonstration of violet-DFB laser with fairly small temperature dependence in current-light characteristics2024

    • Author(s)
      Fukamachi Toshihiko、Nishinaka Junichi、Naniwae Koichi、Usuda Shuichi、Fukai Haruki、Sugitani Akihiko、Uemukai Masahiro、Tanikawa Tomoyuki、Katayama Ryuji
    • Journal Title

      Applied Physics Express

      Volume: 17 Issue: 5 Pages: 052004-052004

    • DOI

      10.35848/1882-0786/ad40fb

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-23K26572
  • [Journal Article] Polarity Inversion of GaN via AlN Oxidation Interlayer Using Metal-Organic Vapor Phase Epitaxy2023

    • Author(s)
      Murata Tomotaka、Ikeda Kazuhisa、Yamasaki Jun、Uemukai Masahiro、Tanikawa Tomoyuki、Katayama Ryuji
    • Journal Title

      physica status solidi (b)

      Volume: 260 Issue: 8 Pages: 2200583-2200583

    • DOI

      10.1002/pssb.202200583

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19H02631, KAKENHI-PROJECT-20H02640
  • [Journal Article] GaN channel waveguide with vertically polarity inversion formed by surface activated bonding for wavelength conversion2022

    • Author(s)
      Yokoyama Naoki、Tanabe Ryo、Yasuda Yuma、Honda Hiroto、Ichikawa Shuhei、FUJIWARA Yasufumi、HIKOSAKA TOSHIKI、Uemukai Masahiro、TANIKAWA Tomoyuki、KATAYAMA Ryuji
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 61 Issue: 5 Pages: 050902-050902

    • DOI

      10.35848/1347-4065/ac57ab

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Journal Article] Second harmonic generation in GaN transverse quasi-phase-matched waveguide pumped with femtosecond laser2022

    • Author(s)
      Yokoyama Naoki、Morioka Yoshiki、Murata Tomotaka、Honda Hiroto、Serita Kazunori、Murakami Hironaru、Tonouchi Masayoshi、Tokita Shigeki、Ichikawa Shuhei、Fujiwara Yasufumi、Hikosaka Toshiki、Uemukai Masahiro、Tanikawa Tomoyuki、Katayama Ryuji
    • Journal Title

      Applied Physics Express

      Volume: 15 Issue: 11 Pages: 112002-112002

    • DOI

      10.35848/1882-0786/ac9511

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19H02631, KAKENHI-PROJECT-21H01845
  • [Journal Article] Fabrication and evaluation of rib-waveguide-type wavelength conversion devices using GaN-QPM crystals2022

    • Author(s)
      Ishihara Hiroki、Shimada Keiya、Umeda Soshi、Yokoyama Naoki、Honda Hiroto、Kurose Kazuhiro、Kawata Yoshimasa、Sugita Atsushi、Inoue Yoku、Uemukai Masahiro、Tanikawa Tomoyuki、Katayama Ryuji、Nakano Takayuki
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 61 Issue: SK Pages: SK1020-SK1020

    • DOI

      10.35848/1347-4065/ac727a

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Journal Article] Monolithic microcavity second harmonic generation device using low birefringence paraelectric material without polarity-inverted structure2021

    • Author(s)
      Nambu Tomoaki、Nagata Takumi、Umeda Soshi、Shiomi Keishi、Fujiwara Yasufumi、Hikosaka Toshiki、Mannan Abdul、Bagsican Filchito Renee G.、Serita Kazunori、Kawayama Iwao、Tonouchi Masayoshi、Uemukai Masahiro、Tanikawa Tomoyuki、Katayama Ryuji
    • Journal Title

      Applied Physics Express

      Volume: 14 Issue: 6 Pages: 061004-061004

    • DOI

      10.35848/1882-0786/abff9e

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Journal Article] Monolithic microcavity second harmonic generation device using low birefringence paraelectric material without polarity-inverted structure2021

    • Author(s)
      T. Nambu, T. Nagata,S. Umeda, K. Shiomi, Y. Fujiwara, T. Hikosaka, A. Mannan, D. Bagsican, K. Serita, I. Kawayama, M. Tonouchi, M. Uemukai, T. Tanikawa and R. Katayama
    • Journal Title

      Applied Physics Express

      Volume: -

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Journal Article] Polarity inversion of aluminum nitride by direct wafer bonding2018

    • Author(s)
      Hayashi, Y; Katayama, R; Akiyama, T; Ito, T; Miyake, H
    • Journal Title

      APPLIED PHYSICS EXPRESS

      Volume: 11 Issue: 3 Pages: 31003-31003

    • DOI

      10.7567/apex.11.031003

    • NAID

      210000136117

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06415, KAKENHI-PROJECT-17H01063, KAKENHI-PROJECT-17K19078, KAKENHI-PUBLICLY-17H05335, KAKENHI-PROJECT-17H06762
  • [Journal Article] Biexciton Emission From Single Quantum-Confined Structures in N-Polar (000-1) InGaN/GaN Multiple Quantum Wells2017

    • Author(s)
      Takamiya Kengo、Yagi Shuhei、Yaguchi Hiroyuki、Akiyama Hidefumi、Shojiki Kanako、Tanikawa Tomoyuki、Katayama Ryuji
    • Journal Title

      physica status solidi (b)

      Volume: 255 Issue: 5 Pages: 1700454-1700454

    • DOI

      10.1002/pssb.201700454

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H01063, KAKENHI-PROJECT-15H03968, KAKENHI-PUBLICLY-17H05335
  • [Journal Article] Absolute technique for measuring internal electric fields in InGaN/GaN light-emitting diodes by electroreflectance applicable to all crystal orientations2017

    • Author(s)
      Tomoyuki Tanikawa, Kanako Shojiki, Ryuji Katayama, Shigeyuki Kuboya, Takashi Matsuoka, Yoshio Honda, Hiroshi Amano
    • Journal Title

      Applied Physics Express

      Volume: 10 Issue: 8 Pages: 082101-082101

    • DOI

      10.7567/apex.10.082101

    • NAID

      210000135940

    • Peer Reviewed
    • Data Source
      KAKENHI-PUBLICLY-17H05325, KAKENHI-PROJECT-17H01063, KAKENHI-PROJECT-17K19078, KAKENHI-PUBLICLY-17H05335
  • [Journal Article] Effects of Mg/Ga and V/III source ratios on hole concentration of N-polar p-type GaN grown by metalorganic vapor phase epitaxy2016

    • Author(s)
      R. Nonoda, K. Shojiki, T. Tanikawa, S. Kuboya, R. Katayama, and T. Matsuoka
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55 (5S) Issue: 5S Pages: 05FE01-05FE01

    • DOI

      10.7567/jjap.55.05fe01

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Journal Article] Nanometer scale fabrication and optical response of InGaN/GaN quantum disks2016

    • Author(s)
      Yi-Chun Lai, Akio Higo, Takayuki Kiba, Cedric Thomas, Shula Chen, Chang Yong Lee, Tomoyuki Tanikawa, Shigeyuki Kuboya, Ryuji Katayama, Kanako Shojiki, Junichi Takayama, Ichiro Yamashita, Akihiro Murayama, Gou-Chung Chi, Peichen Yu, Seiji Samukawa
    • Journal Title

      Nanotechnology

      Volume: 27 Issue: 42 Pages: 425401-425401

    • DOI

      10.1088/0957-4484/27/42/425401

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06359, KAKENHI-PROJECT-26600082
  • [Journal Article] Polarity control of GaN grown on pulsed-laser-deposited AlN/GaN templates by metalorganic vapor phase epitaxy2016

    • Author(s)
      J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55 (5S) Issue: 5S Pages: 05FA04-05FA04

    • DOI

      10.7567/jjap.55.05fa04

    • NAID

      210000146483

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Journal Article] Large Stokes-like shift in N-polar (000-1) InGaN/GaN multiple-quantum-well light-emitting diodes2016

    • Author(s)
      T. Tanikawa, K. Shojiki, S .Kuboya, R. Katayama, and T. Matsuoka
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55 (5S) Issue: 5S Pages: 05FJ03-05FJ03

    • DOI

      10.7567/jjap.55.05fj03

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26600082, KAKENHI-PROJECT-13J10877, KAKENHI-PROJECT-16K18074
  • [Journal Article] Ga‐polar GaN film grown by MOVPE on cleaved ScAlMgO4 (0001) substrate with millimeter‐scale wide terraces2016

    • Author(s)
      Takuya Iwabuchi, Shigeyuki Kuboya, Tomoyuki Tanikawa, Takashi Hanada, Ryuji Katayama, Tsuguo Fukuda, Takashi Matsuoka
    • Journal Title

      physica status solidi (a)

      Volume: - Issue: 9 Pages: 1600754-1600754

    • DOI

      10.1002/pssa.201600754

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Journal Article] Homogeneity improvement of N-polar InGaN/GaN multiple quantum wells by using c-plane sapphire substrate with off-cut-angle toward a-sapphire plane2016

    • Author(s)
      Kanako Shojiki, Takashi Hanada, Tomoyuki Tanikawa, Yasuhiko Imai, Shigeru Kimura, Ryohei Nonoda, Shigeyuki Kuboya, Ryuji Katayama, Takashi Matsuoka
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 (5S) Issue: 5S Pages: 05FA09-05FA09

    • DOI

      10.7567/jjap.55.05fa09

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Journal Article] Suppression of metastable-phase inclusion in N-polar (000-1) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy2015

    • Author(s)
      K. Shojiki, J.H.Choi, T. Iwabuchi, N. Usami, T. Tanikawa, S. Kuboya,T. Hanada, R. Katayama, and T. Matsuoka
    • Journal Title

      Appl. Phys. Lett.

      Volume: 106 (22) Issue: 22

    • DOI

      10.1063/1.4922131

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600082, KAKENHI-PROJECT-13J10877
  • [Journal Article] Red to blue wavelength emission of N-polar (000-1) InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy2015

    • Author(s)
      K. Shojiki, T. Tanikawa, J.H.Choi, S. Kuboya,T. Hanada, R. Katayama, and T. Matsuoka
    • Journal Title

      Appl. Phys. Express

      Volume: 8 (6) Issue: 6 Pages: 061005-061005

    • DOI

      10.7567/apex.8.061005

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600082, KAKENHI-PROJECT-13J10877
  • [Journal Article] Enhancement of surface migration by Mg doping in the metalorganic vapor phase epitaxy of N-polar (0001) GaN/sapphire2014

    • Author(s)
      T. Tanikawa, K. Shojiki, T. Aisaka, T. Kimura, S. Kuboya, T. Hanada, R. Katayama, T. Matsuoka
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 53 Issue: 5S1 Pages: 05FL05-05FL05

    • DOI

      10.7567/jjap.53.05fl05

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-13J10877, KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
  • [Journal Article] Effect of c-plane sapphire substrate miscut angle on indium content of MOVPE-grown N-polar InGaN2014

    • Author(s)
      K. Shojiki and R. Katayama(他6名)
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 53(5S1) Issue: 5S1 Pages: 05FL07-05FL07

    • DOI

      10.7567/jjap.53.05fl07

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
  • [Journal Article] Effect of Sapphire Nitridation and Group-III Source Flow Rate Ratio on In-Incorporation into InGaN Grown by MOVPE2014

    • Author(s)
      J. H. Choi, K. Shojiki, T. Tanikawa, T. Hanada, R. Katayama, T. Matsuoka
    • Journal Title

      Joumal of Nanoscience and Nanotechynology

      Volume: 14 Issue: 8 Pages: 6112-6115

    • DOI

      10.1166/jnn.2014.8306

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-13J10877, KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
  • [Journal Article] Key Factors for Metal Organic Chemical Vapor Deposition of InGaN Films with High InN Molar Fraction2013

    • Author(s)
      Yu Huai Liu, Fang Wang, Wei Zhang, Shou Yi Yang, Yuan Tao Zhang, Ryuji Katayama, Takashi Matsuoka
    • Journal Title

      Applied Mechanics and Materials

      Volume: 341 Pages: 204-207

    • DOI

      10.4028/www.scientific.net/amm.341-342.204

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Journal Article] RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN buffer layer2013

    • Author(s)
      M Kakuda, S Morikawa, S Kuboya, R Katayama, H Yaguchi, K Onabe
    • Journal Title

      Journal of Crystal Growth

      Volume: 378 Pages: 307-309

    • DOI

      10.1016/j.jcrysgro.2012.12.120

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Journal Article] RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN buffer2013

    • Author(s)
      M. Kakuda, S. Morikawa, S. Kuboya、R. Katayama, H. Yaguchi, K. Onabe
    • Journal Title

      Journal of Crystal Growth

      Volume: In Press

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360005
  • [Journal Article] Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy2013

    • Author(s)
      Yuantao Zhang, Takeshi Kimura, Kiattiwut Prasertusk, Takuya Iwabuchi, Suresh Kumar, Yuhuai Liu, Ryuji Katayama, Takashi Matsuoka
    • Journal Title

      Thin Solid Films

      Volume: 536 Pages: 152-155

    • DOI

      10.1016/j.tsf.2013.04.004

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
  • [Journal Article] Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates2013

    • Author(s)
      RG Jin, S Yagi, Y Hijikata, S Kuboya, K Onabe, R Katayama, H Yaguchi
    • Journal Title

      Journal of Crystal Growth

      Volume: 378 Pages: 85-87

    • DOI

      10.1016/j.jcrysgro.2012.12.043

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24360004
  • [Journal Article] RF-MBE growth of cubic AlN on MgO(001) substrates via 2-step c-GaN buffer2013

    • Author(s)
      M. Kakuda, S. Morikawa, S. Kuboya、R. Katayama, H. Yaguchi, K. Onabe,
    • Journal Title

      Journal of Crystal Growth

      Volume: (In Press)

    • URL

      http://www.sciencedirect.com/science/journal/00220248?oldURL=y

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360005
  • [Journal Article] Investigation of indium incorporation into InGaN by nitridation of sapphire substrate in MOVPE2013

    • Author(s)
      J. H. Choi and R. Katayama(他4名)
    • Journal Title

      phys. stat. sol. (c)

      Volume: 10(3) Issue: 3 Pages: 417-420

    • DOI

      10.1002/pssc.201200667

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
  • [Journal Article] Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs2013

    • Author(s)
      Kengo Takamiya, Toshiyuki Fukushima, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi
    • Journal Title

      THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012

      Volume: 1566 (1) Pages: 538-539

    • DOI

      10.1063/1.4848523

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24360004
  • [Journal Article] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2012

    • Author(s)
      K.Takamiya, Y.Endo, T.Fukushima, S.Yagi, Y.Hijikata, T.Mochizuki, M.Yoshita, H. Akiyama, S.Kuboya, K.Onabe, R.Katayama, H.Yaguchi
    • Journal Title

      Materials Science Forum

      Volume: 706-709 Pages: 2916-2921

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Journal Article] Optical properties of the periodic polarity-inverted GaN waveguides2012

    • Author(s)
      R. Katayama(他7名)
    • Journal Title

      Proc. of SPIE

      Volume: 8268 Pages: 826814-826913

    • DOI

      10.1117/12.909831

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Journal Article] Tilted domain and indium content of MOVPE-grown InGaN layer on m-plane GaN substrate2012

    • Author(s)
      K. Shojiki and R. Katayama(他4名)
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 51 Issue: 4S Pages: 04DH01-04DH01

    • DOI

      10.1143/jjap.51.04dh01

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
  • [Journal Article] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2012

    • Author(s)
      K. Takamiya, Y.Endo, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, H. Yaguchi
    • Journal Title

      Materials Science Forum

      Volume: Vol.706-709 Pages: 2916-2921

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Journal Article] Effect of Nitridation on Indium-composition of InGaN Films2012

    • Author(s)
      J. H. Choi, S. Kumar, S. Y. Ji, K. Shojiki, T. Hanada, R. Katayama and T. Matsuoka
    • Journal Title

      Key. Eng. Mater.

      Volume: 508 Pages: 193-198

    • DOI

      10.4028/www.scientific.net/kem.508.193

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
  • [Journal Article] Biexciton Luminescence from Individual Isoelectronic Traps in NitrogenDelta-DopedGaAs2012

    • Author(s)
      K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, and H. Yaguchi
    • Journal Title

      Appl. Phys. Express

      Volume: 5 Issue: 11 Pages: 111201-111201

    • DOI

      10.1143/apex.5.111201

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-20104004, KAKENHI-PROJECT-23360135, KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24360004
  • [Journal Article] Effect of Nitridation on Indium-composition of InGaN Films2012

    • Author(s)
      J. H. Choi and R. Katayama(他5名)
    • Journal Title

      Key. Eng. Mater

      Volume: 508 Pages: 193-198

    • URL

      http://www.scientific.net/KEM.508.193

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Journal Article] Photoluminescence from single is electronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A2010

    • Author(s)
      T. Fukushima, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Okano, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe
    • Journal Title

      Physica

      Volume: Vol.42, No10 Issue: 10 Pages: 2529-2531

    • DOI

      10.1016/j.physe.2009.12.011

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Journal Article] Photoluminescence from single isoelectronic traps in nitrogen delta-dopedGaAs grown on GaAs(111)A2010

    • Author(s)
      T.Fukushima, Y.Hijikata, H.Yaguchi, S.Yoshida, M.Okano, M.Yoshita, H.Akiyama, S.Kuboya, R.Katayama, K.Onabe
    • Journal Title

      Physica E(掲載確定)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Journal Article] Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A2010

    • Author(s)
      T.Fukushima, Y.Hijikata, H.Yaguchi, S.Yoshida, M.Okano, M.Yoshita, H.Akiyama, S.Kuboya, R.Katayama, K.Onabe
    • Journal Title

      Physica E

      Volume: 42 Pages: 2529-2531

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Journal Article] MOVPE growth of InN films using 1, 1-dimethylhydrazine as a nitrogen precursor2009

    • Author(s)
      Q. T. Thieu, Y. Seki, S. Kuboya, R. Katayama, K. Onabe
    • Journal Title

      Journal of Crystal Growth Vol. 311

      Pages: 2802-2805

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] MOVPE Growth of InN films Using 1, 1-Dimethylhydrazine as a Nitrogen Precursor Journal of Crystal Growth2009

    • Author(s)
      Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
    • Journal Title

      Journal of Crystal Growth (印刷中)(掲載確定)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19032002
  • [Journal Article] MOVPE Growth of InN films Using 1,1-Dimethylhydrazine as a Nitrogen2009

    • Author(s)
      Q.T.Thieu, Y.Seki, S.Kuboya, R.Katayama, K.Onabe
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2802-2805

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] Metastable cubic InN layers on GaAs(001)substrates grown by MBE : Growth condition and crystal structure2009

    • Author(s)
      S.Sanorpim, P.Jantawongrit, S.Kuntharin, C.Thanachayanont, T.Nakamura, R.Katayama, K.Onabe
    • Journal Title

      physica status solidi(c) 6

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] MOVPE Growth of InN films Using 1,1-Dimethylhydrazine as a Nitrogen Precursor2009

    • Author(s)
      Q.T.Thieu, Y.Seki, S.Kuboya, R.Katayama, K.Onabe
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2802-2805

    • Peer Reviewed
    • Data Source
      KAKENHI-PUBLICLY-21016003
  • [Journal Article] MOVPE growth and photoluminescence properties of InAsN QDs2008

    • Author(s)
      S. Kuboya, S. Takahashi, Q. T. Thieu, F. Nakajima, R. Katayama, K. Onabe
    • Journal Title

      physica status solidi (c) Vol. 5

      Pages: 1715-1718

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] Effect of substrate-surface orientation on the N incorporation in GaAsN films on GaAs grown by MOVPE2008

    • Author(s)
      P. Klangtakai, S. Sanorpim, S. Kuboya, R. Katayama, K. Onabe
    • Journal Title

      Advanced Materials Research Vol. 55-57

      Pages: 825-828

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] Incorporation of N in high N-content GaAsN films investigated by Raman scattering2008

    • Author(s)
      S. Sanorpim, P. Panpech, S. Vijarnwannaluk, F. Nakajima, S. Kuboya, R. Katayama, K. Onabe
    • Journal Title

      physica status solidi (c) Vol. 5

      Pages: 2923-2925

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] InAsN quantum dots grown on GaAs(001) substrates by MOVPE2007

    • Author(s)
      S. Kuboya, Q. T. Thieu, F. Nakajima, R. Katayama, K. Onabe
    • Journal Title

      physica status solidi (c) 4

      Pages: 2387-2390

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] Photoluminescence and photoluminescence-excitation spectro-scopy of InGaPN/GaP lattice-matched single quantum well structures grown by MOVPE2007

    • Author(s)
      D. Kaewket, S. Tungasmita, S. Sanorpim, F. Nakajima, N. Nakadan, T. Kimura, R. Katayama, K. Onabe
    • Journal Title

      Journal of Crystal Growth Vol. 298

      Pages: 531-535

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] Structural investigation of InGaAsN films grown on pseudo-lattice-matched InGaAs substrates by metalorganic vapor phase epitaxy2007

    • Author(s)
      P. Kongjaeng, S. Sanorpim, T. Yamamoto, W. Ono, F. Nakajima, R. Katayama, K. Onabe
    • Journal Title

      Journal of Crystal Growth Vol. 298

      Pages: 111-115

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] Photoluminescence and photoluminescence-excitation spectroscopy of InGaPN/GaP lattice-matched single quantum well structures grown by MOVPE2007

    • Author(s)
      D. Kaewket, S. Tungasmita, S. Sanorpim, F. Nakajima, N. Nakadan, T. Kimura, R. Katayama, K. Onabe
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 531-535

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] MOVPE and characterization of InAsN/GaAs multiple quantum wells2007

    • Author(s)
      S. Kuboya, Q. T. Thieu, W. Ono, F. Nakajima, R. Katayama, K. Onabe
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 544-547

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] MOVPE and characterization of InAsN/GaAs multiple quantum wells2007

    • Author(s)
      S. Kuboya, Q. T. Thieu, W. Ono, F. Nakajima, R. Katayama, K. Onabe
    • Journal Title

      Journal of Crystal Growth Vol. 298

      Pages: 544-547

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] Growth and post-growth rapid thermal annealing of InGaPN on GaP grown by metalorganic vapor phase epitaxy2007

    • Author(s)
      S. Sanorpim, F. Nakajima, N. Nakadan, T. Kimura, R. Katayama, K. Onabe
    • Journal Title

      Journal of Crystal Growth Vol. 298

      Pages: 150-153

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] Growth and post-growth rapid thermal annealing of InGaPN on GaP grown by metalorganic vapor phase epitaxy2007

    • Author(s)
      S. Sanorpim, F. Nakajima, N. Nakadan, T. Kimura, R. Katayama, K. Onabe
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 150-153

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] Structural investigation of InGaAsN films grown on pseudo-lattice-matched InGaAs substrates by metalorganic vapor phase epitaxy2007

    • Author(s)
      P. Kongjaeng, S. Sanorpim, T. Yamamoto, W. Ono, F. Nakajima, R. Katayama, K. Onabe
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 111-115

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] InAsN quantum dots grown on GaAs(001) substrates by MOVPE2007

    • Author(s)
      S. Kuboya, Q. T. Thieu, F. Nakajima, R. Katayama, K. Onabe
    • Journal Title

      physica status solidi (c) Vol. 4

      Pages: 2387-2390

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] Shutterless nitrogen flux modulation using a dual-mode rf-plasma operation during RF-MBE growth of GaN2006

    • Author(s)
      R.Katayama, H.Tsurusawa, T.Nakamura, H.Komaki, K.Onabe
    • Journal Title

      physica status solidi (出版中)

    • Data Source
      KAKENHI-PROJECT-16760032
  • [Journal Article] Buffer design for nitrogen polarity GaN on sapphire (0001) by RF-MBE and application to the nanostructure formation using KOH etching2006

    • Author(s)
      R.Katayama, K.Onabe
    • Journal Title

      Physica E (出版中)

    • Data Source
      KAKENHI-PROJECT-16760032
  • [Journal Article] Fabrication of cubic and hexagonal GaN microcrystals on GaAs(001) substrates with relatively-thin low temperature GaN buffer layer2005

    • Author(s)
      R.Katayama, K.Onabe
    • Journal Title

      Journal of Crystal Growth 278

      Pages: 431-436

    • Data Source
      KAKENHI-PROJECT-16760032
  • [Journal Article] Buffer design for nitrogen polarity GaN on sapphire (0001) by RF-MBE and application to the nanostructure formation using KOH etching2005

    • Author(s)
      R.Katayama, K.Onabe
    • Journal Title

      Physica E

    • Data Source
      KAKENHI-PROJECT-16760032
  • [Journal Article] Fabrication of cubic and hexagonal GaN micro-crystals on GaAs(001) substrates with relatively-thin low temperature GaN buffer layer2005

    • Author(s)
      R.Katayama, K.Onabe
    • Journal Title

      Journal of Crystal Growth 276(1-2)

    • Data Source
      KAKENHI-PROJECT-16760032
  • [Patent] 半導体レーザ素子および発光装置2024

    • Inventor(s)
      西中 淳一、深町 俊彦、上向井 正裕、片山 竜二、谷川 智之
    • Industrial Property Rights Holder
      ウシオ電機株式会社、国立大学法人大阪大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2024-044657
    • Filing Date
      2024
    • Data Source
      KAKENHI-PROJECT-23K26572
  • [Patent] 半導体レーザ素子およびその製造方法、発光装置2024

    • Inventor(s)
      西中 淳一、深町 俊彦、上向井 正裕、片山 竜二、谷川 智之
    • Industrial Property Rights Holder
      ウシオ電機株式会社、国立大学法人大阪大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2024-017482
    • Filing Date
      2024
    • Data Source
      KAKENHI-PROJECT-23K26572
  • [Patent] 半導体レーザ素子および発光装置2024

    • Inventor(s)
      西中 淳一、深町 俊彦、上向井 正裕、片山 竜二、谷川 智之
    • Industrial Property Rights Holder
      ウシオ電機株式会社、国立大学法人大阪大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2024-041407
    • Filing Date
      2024
    • Data Source
      KAKENHI-PROJECT-23K26572
  • [Patent] 窒化物半導体レーザ素子およびその製造方法、発光装置2023

    • Inventor(s)
      深町 俊彦、上向井 正裕、片山 竜二、谷川 智之
    • Industrial Property Rights Holder
      ウシオ電機株式会社、国立大学法人大阪大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2023-119337
    • Filing Date
      2023
    • Data Source
      KAKENHI-PROJECT-23K26572
  • [Patent] 窒化物半導体膜の形成方法2021

    • Inventor(s)
      高橋伸明、三浦仁嗣、根石浩司、片山竜二、森勇介、今西正幸
    • Industrial Property Rights Holder
      高橋伸明、三浦仁嗣、根石浩司、片山竜二、森勇介、今西正幸
    • Industrial Property Rights Type
      特許
    • Filing Date
      2021
    • Overseas
    • Data Source
      KAKENHI-PROJECT-19K22145
  • [Patent] 窒化物結晶、光学装置、半導体装置、窒化物結晶の製造方法2020

    • Inventor(s)
      彦坂年輝、布上真也、谷川智之、片山竜二、上向井正裕
    • Industrial Property Rights Holder
      株式会社東芝、大阪大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2020-032021
    • Filing Date
      2020
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Patent] 窒化物半導体基板、窒化物半導体基板の製造方法、窒化物半導体基板の製造装置及び窒化物半導体デバイス2017

    • Inventor(s)
      林 侑介、三宅 秀人、片山 竜二
    • Industrial Property Rights Holder
      林 侑介、三宅 秀人、片山 竜二
    • Industrial Property Rights Type
      特許
    • Filing Date
      2017
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] AlN/SiNx水平積層横型擬似位相整合導波路の設計と作製2024

    • Author(s)
      本田 啓人,上向井 正裕,谷川 智之,片山 竜二
    • Organizer
      第71回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K26572
  • [Presentation] 横型擬似位相整合4層極性反転AlN導波路による第二高調波発生の実証2024

    • Author(s)
      佐藤 栄希,本田 啓人,百崎 怜,玉野 智大,正直 花奈子,三宅 秀人,上向井 正裕,谷川 智之,片山 竜二
    • Organizer
      第71回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K26572
  • [Presentation] InGaN周期スロットレーザーのCW波長可変単一モード動作実証2024

    • Author(s)
      楠井 大晴,和田 拓巳,上向井 正裕,谷川 智之,片山 竜二
    • Organizer
      レーザー学会学術講演会第44回年次大会
    • Data Source
      KAKENHI-PROJECT-23K26572
  • [Presentation] Horizontally Stacked Transverse QPM Channel Waveguide for Squeezed Light Generation2023

    • Author(s)
      Hiroto Honda, Masahiro Uemukai, Tomoyuki Tanikawa, and Ryuji Katayama
    • Organizer
      第42回電子材料シンポジウム
    • Data Source
      KAKENHI-PROJECT-23K26572
  • [Presentation] グレーティング結合器集積化GaN横型擬似位相整合光子対発生デバイスの設計と作製2023

    • Author(s)
      古川 裕也、池田 和久、本田 啓人、村田 知駿、上向井 正裕、谷川 智之、片山 竜二
    • Organizer
      レーザー学会学術講演会第43回年次大会
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Fabrication of Transverse Quasi-Phase-Matched Channel Waveguide using 4-Layer Polarity Inverted AlN Structure for Second Harmonic Generation2023

    • Author(s)
      Eiki Sato, Hiroto Honda, Ryo Momosaki, Tomohiro Tamano, Kanako Shojiki, Hideto Miyake, Masahiro Uemukai, Tomoyuki Tanikawa, and Ryuji Katayama
    • Organizer
      第42回電子材料シンポジウム
    • Data Source
      KAKENHI-PROJECT-23K26572
  • [Presentation] Fabrication of Transverse Quasi-Phase-Matched Channel Waveguide using 4-Layer Polarity Inverted AlN Structure for Second Harmonic Generation2023

    • Author(s)
      Eiki Sato, Hiroto Honda, Ryo Momosaki, Tomohiro Tamano, Kanako Shojiki, Hideto Miyake, Masahiro Uemukai, Tomoyuki Tanikawa, and Ryuji Katayama
    • Organizer
      14th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K26572
  • [Presentation] Fabrication of InGaN Tunable Single-Mode Laser Using Periodically Slotted Structure2023

    • Author(s)
      Taisei Kusui, Masahiro Uemukai, Tomoyuki Tanikawa, and Ryuji Katayama
    • Organizer
      第42回電子材料シンポジウム
    • Data Source
      KAKENHI-PROJECT-23K26572
  • [Presentation] 2層極性反転AlN横型擬似位相整合チャネル導波路による遠紫外第二高調波発生2023

    • Author(s)
      本田 啓人、正直 花奈子、上杉 謙次郎、三宅 秀人、市川 修平、舘林 潤、藤原 康文、芹田 和則、村上 博成、斗内 政吉、上向井 正裕、谷川 智之、片山 竜二
    • Organizer
      レーザー学会学術講演会第43回年次大会
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] GaN横型擬似位相整合光子対発生デバイスに向けた高次導波モード励起グレーティング結合器2023

    • Author(s)
      古川 裕也,本田 啓人, 池田 和久, 上向井 正裕, 谷川 智之, 片山 竜二
    • Organizer
      第84回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K26572
  • [Presentation] High-Order Guided Mode Excitation Grating Coupler for GaN Transverse Quasi-Phase-Matched Photon Pair Generation Device2023

    • Author(s)
      Yuya Furukawa, Hiroto Honda, Kazuhisa Ikeda, Masahiro Uemukai, Tomoyuki Tanikawa, and Ryuji Katayama
    • Organizer
      第42回電子材料シンポジウム
    • Data Source
      KAKENHI-PROJECT-23K26572
  • [Presentation] マルチ・スパッタアニール法による多層極性反転AlN構造の作製2023

    • Author(s)
      玉野 智大、正直 花奈子、本田 啓人、上杉 謙次郎、肖 世玉、上向井 正裕、谷川 智之、片山 竜二、三宅 秀人
    • Organizer
      第70回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] 多層極性反転 AlN 構造を用いた横型 QPM 導波路の設計2023

    • Author(s)
      本田 啓人、百崎 怜、玉野 智大、正直 花奈子、三宅 秀人、上向井 正裕、谷川 智之、片山 竜二
    • Organizer
      第70回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Design of AlN/Ta2O5 Horizontally Stacked Transverse-QPM Channel Waveguide for Squeezed Light Generation2023

    • Author(s)
      Hiroto Honda, Masahiro Uemukai, Tomoyuki Tanikawa, and Ryuji Katayama
    • Organizer
      14th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K26572
  • [Presentation] 高効率スクイーズド光発生に向けた MgO:CLN/GaN横型擬似位相整合導波路波長変換デバイスの作製2023

    • Author(s)
      野呂 諒介、上向井 正裕、谷川 智之、片山 竜二
    • Organizer
      レーザー学会学術講演会第43回年次大会
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] GaN-QPM結晶を用いた波長変換デバイスの作製および諸特性評価2023

    • Author(s)
      嶋田 慶也、石原 弘基、梅田 颯志、横山 尚生、本田 啓人、井上 翼、上向井 正裕、谷川 智之、片山 竜二、中野 貴之
    • Organizer
      レーザー学会学術講演会第43回年次大会
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Polarity Inversion of GaN via AlN Oxidation Interlayer using Metalorganic Vapor Phase Epitaxy2022

    • Author(s)
      T. Murata, K. Ikeda, J. Yamazaki, T. Tanikawa, M. Uemukai and R. Katayama
    • Organizer
      International Workshop on Nitride Semiconductors 2022
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Second Harmonic Generation of 230 nm DUV Light from Transverse Quasi-Phase-Matched -c-AlN/+c-AlN Channel Waveguide2022

    • Author(s)
      H. Honda, S. Umeda, K. Shojiki, H. Miyake, S. Ichikawa, J. Tatebayashi, Y. Fujiwara, K. Serita, H. Murakami, M. Tonouchi, M. Uemukai, T. Tanikawa and R. Katayama
    • Organizer
      International Workshop on Nitride Semiconductors 2022
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Design of Transverse Quasi-Phase-Matched Non-Polar/AlN Waveguides for 230-nm Far-UV Second Harmonic Generation2022

    • Author(s)
      H. Honda, S. Umeda, K. Shojiki, H. Miyake, M. Kushimoto, Y. Fujiwara, M. Uemukai, T. Tanikawa and R. Katayama
    • Organizer
      2022 Materials Research Society Spring Meeting
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] 高効率スクイーズド光発生に向けたLiNbO3/GaN横型擬似位相整合波長変換デバイスの設計2022

    • Author(s)
      野呂 諒介、上向井 正裕、谷川 智之、片山 竜二
    • Organizer
      第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Design and Fabrication of Transverse Quasi-Phase-Matched HfO2/AlN Channel Waveguide for 230-nm Far-UV Second Harmonic Generation2022

    • Author(s)
      H. Honda, K. Shujiki, H. Miyake, S. Ichikawa, Y. Fuijiwara, M. Uemukai, T. Tanikawa, R. Katayama
    • Organizer
      International Conference on Light-Emitting Devices and Their Industrial Applications 2022
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] MOVPEエピタキシャル極性反転技術を用いたGaN横型擬似位相整合光子対発生デバイスの作製2022

    • Author(s)
      池田 和久、村田 知駿、市川 修平、藤原 康文、上向井 正裕、谷川 智之、片山 竜二
    • Organizer
      第83回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] HfO2/AlN横型擬似位相整合チャネル導波路を用いた230 nm遠紫外第二高調波発生2022

    • Author(s)
      本田 啓人、正直 花奈子、上杉 謙次郎、三宅 秀人、芹田 和則、村上 博成、斗内 政吉、上向井 正裕、谷川 智之、片山 竜二
    • Organizer
      第83回応用物理学会秋季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] 2層極性反転AlN横型擬似位相整合チャネル導波路を用いた230 nm遠紫外第二高調波発生2022

    • Author(s)
      本田 啓人、正直 花奈子、上杉 謙次郎、三宅 秀人、芹田 和則、村上 博成、斗内 政吉、上向井 正裕、谷川 智之、片山 竜二
    • Organizer
      第83回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] 230 nm遠紫外第二高調波発生に向けたHfO2/AlN横型擬似位相整合チャネル導波路の作製2022

    • Author(s)
      本田 啓人、俵 悠弥、藤原 康文、正直 花奈子、三宅 秀人、上向井 正裕、谷川 智之、片山 竜二
    • Organizer
      第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Demonstration of 230-nm Far-UV Second Harmonic Generation from HfO2/AlN Transverse Quasi-Phase Matched Channel Waveguide2022

    • Author(s)
      Y. Furukawa, H. Honda, K. Shojiki, K. Uesugi, H. Miyake, K. Serita, H. Murakami, M. Tonouchi, M. Uemukai, T. Tanikawa and R. Katayama
    • Organizer
      第41回電子材料シンポジウム
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Fabrication of GaN Transverse Quasi Phase Matching Photon Pair Generation Device using MOVPE-Based Epitaxial Polarity Inversion Technology2022

    • Author(s)
      K. Ikeda, T. Murata, S. Ichikawa, Y. Fujiwara, M. Uemukai, T. Tanikawa, and R. Katayama
    • Organizer
      第41回電子材料シンポジウム
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] 230 nm深紫外光発生に向けた2層極性反転AlN導波路の設計と作製2021

    • Author(s)
      本田啓人、永田拓実、市川修平、藤原康文、正直花奈子、三宅秀人、上向井正裕、谷川智之、片山竜二
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] 有機金属気相成長法を用いたGaNエピタキシャル極性反転技術の開発2021

    • Author(s)
      村田知駿、谷川智之、上向井正裕、片山竜二
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Novel Method of Short-Wavelength Emission from Polarity-Inverted Nitride Semiconductor Waveguides2021

    • Author(s)
      R. Katayama, M. Uemukai, and T. Tanikawa
    • Organizer
      The 8th Asian Conference on Crystal Growth and Crystal Technology
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] 表面活性化接合を用いた面方位変調GaNテンプレートの作製と組成変調InGaN量子井戸の有機金属気相成長2021

    • Author(s)
      田辺 凌、吉田 新、安田悠馬、上向井正裕、谷川智之、片山竜二
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Novel Method of Short-Wavelength Emission from Polarity-Inverted Nitride Semiconductor Waveguides2021

    • Author(s)
      R. Katayama, M. Uemukai, and T. Tanikawa
    • Organizer
      第8回結晶成長と結晶技術に関するアジア会議 (CGCT-8)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K22145
  • [Presentation] AlN微小二重共振器型面発光DUV第二高調波発生デバイスの検討2021

    • Author(s)
      南部誠明、矢野岳人、永田拓実、田辺 凌、梅田颯志、市川修平、藤原康文、上向井正裕、谷川智之、片山竜二
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Improved Fabrication of Transverse Quasi-Phase-Matched Double-Layer Polarity Inverted AlN Waveguide for 230-nm Second Harmonic Generation2021

    • Author(s)
      S. Umeda, H. Honda, T. Nambu, S. Ichikawa, Y. Fujiwara, K. Shojiki, H. Miyake, M. Uemukai, T. Tanikawa, and R. Katayama
    • Organizer
      第40回電子材料シンポジウム
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] 広帯域光子対発生に向けたGaN導波路型微小共振器デバイスの作製2021

    • Author(s)
      永田拓実、梅田颯志、隈部岳瑠、安藤悠人、出来真斗、本田善央、天野 浩、トーマスポージン、山田和輝、岩谷素顕、上向井正裕、谷川智之、片山竜二
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] 230 nm遠紫外第二高調波発生に向けた横型擬似位相整合2層極性反転AlN導波路の作製2021

    • Author(s)
      梅田颯志、本田啓人、南部誠明、市川修平、藤原康文、正直花奈子、三宅秀人、上向井正裕、谷川智之、片山竜二
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Novel wavelength converters made of nitride semiconductors: transverse QPM waveguides and monolithic microcavities2021

    • Author(s)
      R. Katayama, M. Uemukai, and T. Tanikawa
    • Organizer
      SPIE Photonics West 2021
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Novel wavelength converters made of nitride semiconductors: transverse QPM waveguides and monolithic microcavities2021

    • Author(s)
      R. Katayama, M. Uemukai, and T. Tanikawa
    • Organizer
      SPIE Photonics West 2021
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K22145
  • [Presentation] InGaN高次結合ディープエッチDBRレーザ2021

    • Author(s)
      樋口晃大、松下就哉、上向井正裕、谷川智之、片山竜二
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Novel Method of Short-Wavelength Emission from Polarity-Inverted Nitride Semiconductor Waveguides2021

    • Author(s)
      R. Katayama, M. Uemukai, and T. Tanikawa
    • Organizer
      第8回結晶成長と結晶技術に関するアジア会議 (CGCT-8)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Fabrication of GaN Polarity Inverted Structure via Ultrathin AlN Oxidation Interlayer using Metalorganic Vapor Phase Epitaxy2021

    • Author(s)
      T. Murata, T. Tanikawa, M. Uemukai and R. Katayama
    • Organizer
      第40回電子材料シンポジウム
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Novel wavelength converters made of nitride semiconductors: transverse QPM waveguides and monolithic microcavities2021

    • Author(s)
      R. Katayama, M. Uemukai, and T. Tanikawa
    • Organizer
      SPIE Photonics West 2021
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] GaN横型擬似位相整合第二高調波発生デバイスの効率評価2021

    • Author(s)
      横山尚生、村田知駿、本田啓人、市川修平、藤原康文、上向井正裕、谷川智之、片山竜二
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] 230 nm遠紫外第二高調波発生に向けた横型擬似位相整合HfO2/AlN導波路の設計2021

    • Author(s)
      本田啓人、梅田颯志、正直花奈子、三宅秀人、上向井正裕、谷川智之、片山竜二
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] GaN横型擬似位相整合第二高調波発生デバイスの効率評価2021

    • Author(s)
      横山尚生、村田知駿、本田啓人、市川修平、藤原康文、上向井正裕、谷川智之、片山竜二
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Design of Non-Polar/AlN Transverse Quasi-Phase Matched Channel Waveguides for 230-nm Far-UV Second Harmonic Generation2021

    • Author(s)
      H. Honda, K. Shojiki, H. Miyake, M. Uemukai, T. Tanikawa and R. Katayama
    • Organizer
      第40回電子材料シンポジウム
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] 230 nm深紫外光発生に向けた2層極性反転AlN導波路の設計と作製2021

    • Author(s)
      本田啓人、永田拓実、市川修平、藤原康文、正直花奈子、三宅秀人、上向井正裕、谷川智之、片山竜二
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] 窒化物半導体極性制御特異構造の形成技術の深化と物性・機能の制御2021

    • Author(s)
      片山 竜二
    • Organizer
      新学術領域研究 特異構造の結晶科学 オンライン成果報告・連絡会
    • Data Source
      KAKENHI-PROJECT-19K22145
  • [Presentation] 表面活性化接合を用いた面方位変調GaNテンプレートの作製と組成変調InGaN量子井戸の有機金属気相成長2021

    • Author(s)
      田辺 凌、吉田 新、安田悠馬、上向井正裕、谷川智之、片山竜二
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K22145
  • [Presentation] 窒化物半導体極性制御特異構造の形成技術の深化と物性・機能の制御2021

    • Author(s)
      片山 竜二
    • Organizer
      新学術領域研究 特異構造の結晶科学 オンライン成果報告・連絡会
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] AlN微小二重共振器型面発光DUV第二高調波発生デバイスの検討2021

    • Author(s)
      南部誠明、矢野岳人、永田拓実、田辺 凌、梅田颯志、市川修平、藤原康文、上向井正裕、谷川智之、片山竜二
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] 広帯域光子対発生に向けたGaN導波路型微小共振器デバイスの作製2021

    • Author(s)
      永田拓実、梅田颯志、隈部岳瑠、安藤悠人、出来真斗、本田善央、天野 浩、トーマスポージン、山田和輝、岩谷素顕、上向井正裕、谷川智之、片山竜二
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Efficiency Evaluation of GaN Transverse Quasi-Phase-Matched Wavelength Conversion Device under Femtosecond Laser Excitation2021

    • Author(s)
      N. Yokoyama, H. Honda, T. Murata, K. Serita, H. Murakami, M. Tonouchi*, S. Tokita, S. Ichikawa, Y. Fujiwara, M. Uemukai, T. Tanikawa and R. Katayama
    • Organizer
      第40回電子材料シンポジウム
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Experimental Determination of Wavelength Conversion Efficiency in Transverse Quasi-Phase-Matched GaN SHG Waveguide Excited with Femtosecond Laser2021

    • Author(s)
      N. Yokoyama, Y. Morioka, T. Murata, H. Honda, F. R. G. Bagsican, K. Serita, H. Murakami, M. Tonouchi, S. Ichikawa, Y. Fujiwara, M. Uemukai, T. Tanikawa, R. Katayama
    • Organizer
      2021 International Conference on Solid State Devices and Materials
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] ワイドギャップ窒化物半導体波長変換デバイスによる紫外光発生2020

    • Author(s)
      片山竜二、上向井正裕、谷川智之
    • Organizer
      応用物理学会 応用電子物性分科会 研究例会
    • Invited
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Design of Ttransverse Quasi-Phase-Matched Double-Layer AlN Waveguide for 230-nm DUV Second Harmonic Generation2020

    • Author(s)
      Hiroto Honda, Naoki Yokoyama, Asahi Yamauchi, Tenta Komatsu, Kanako Shojiki, Hideto Miyake, Masahiro Uemukai, Tomoyuki Tanikawa and Ryuji Katayama
    • Organizer
      第39回 電子材料シンポジウム EMS39
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] 広帯域光子対発生に向けたGaN導波路型微小共振器デバイスの設計2020

    • Author(s)
      永田 拓実,梅田 颯志,上向井 正裕,谷川 智之,片山 竜二
    • Organizer
      第81回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Design of Waveguide Directional Coupler for Electric-Field Driven GaN Mach-Zehnder Interferometer2020

    • Author(s)
      Y. Hisada, A. Tomibayashi, M. Uemukai, T. Tanikawa, and R. Katayama
    • Organizer
      第39回電子材料シンポジウム
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Transverse Quasi-Phase-Matched Second Harmonic Generation using Polarity-Inverted GaN Channel Waveguide with Input Grating Coupler2020

    • Author(s)
      Tomotaka Murata, Naoki Yokoyama, Tenta Komatsu, Yoshiki Morioka, Masahiro Uemukai, Tomoyuki Tanikawa and Ryuji Katayama
    • Organizer
      第39回 電子材料シンポジウム EMS39
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Design and Fabrication of AlN Waveguide Microcavity SHG Device2020

    • Author(s)
      S. Umeda, T. Nagata, M. Uemukai, T. Tanikawa, and R. Katayama
    • Organizer
      第39回電子材料シンポジウム
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Fabrication of GaN Polarity-Inverted Structure by Inductively Coupled Plasma Reactive Ion Etching and Surface Activated Bonding2020

    • Author(s)
      Naoki Yokoyama, Ryo Tanabe, Shuhei Ichikawa, Yasufumi Fujiwara, Masahiro Uemukai, Tomoyuki Tanikawa and Ryuji Katayama
    • Organizer
      第39回 電子材料シンポジウム EMS39
    • Data Source
      KAKENHI-PROJECT-19K22145
  • [Presentation] 表面活性化接合に必要な表面平坦性を維持するGaNのエッチング2020

    • Author(s)
      横山 尚生,田辺 凌,森川 隆哉,藤原 康文,上向井 正裕,谷川 智之,片山 竜二
    • Organizer
      第67回 応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] ワイドギャップ半導体の分極制御と量子光学応用:遠UVC全固体光源2020

    • Author(s)
      片山 竜二,上向井 正裕,谷川 智之
    • Organizer
      第81回 応用物理学会秋季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-19K22145
  • [Presentation] 横型擬似位相整合 GaN 導波路型波長変換デバイスの開発2020

    • Author(s)
      小松 天太,彦坂 年輝,布上 真也,上向井 正裕,谷川 智之,片山 竜二
    • Organizer
      第67回 応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Design of Ttransverse Quasi-Phase-Matched Double-Layer AlN Waveguide for 230-nm DUV Second Harmonic Generation2020

    • Author(s)
      H. Honda, N. Yokoyama, A. Yamauchi, T. Komatsu, K. Shojiki, H. Miyake, M. Uemukai, T. Tanikawa and R. Katayama
    • Organizer
      第39回電子材料シンポジウム
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] AlN 導波路型微小二重共振器第二高調波発生デバイスの設計2020

    • Author(s)
      梅田 颯志,永田 拓実,彦坂 年輝,布上 真也,上向井 正裕,谷川 智之,片山 竜二
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] 表面活性化接合に必要な表面平坦性を維持するGaNのエッチング2020

    • Author(s)
      横山 尚生,田辺 凌,森川 隆哉,藤原 康文,上向井 正裕,谷川 智之,片山 竜二
    • Organizer
      第67回 応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K22145
  • [Presentation] Design of GaN Waveguide Microcavity Device for Broadband Photon Pair Generation2020

    • Author(s)
      Takumi Nagata*, Soshi Umeda, Masahiro Uemukai, Tomoyuki Tanikawa, and Ryuji Katayama
    • Organizer
      第39回 電子材料シンポジウム EMS39
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] ワイドギャップ窒化物半導体波長変換デバイスによる紫外光発生2020

    • Author(s)
      片山 竜二
    • Organizer
      応用電子物性分科会研究例会
    • Invited
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Inductively coupled plasma reactive ion etching of GaN films maintaining surface flatness for surface activated bonding2020

    • Author(s)
      N. Yokoyama, R. Tanabe, T. Morikawa, Y. Fujiwara, M. Uemukai, T. Tanikawa, R. Katayama
    • Organizer
      第8回 発光素子とその産業応用に関する国際学会 LEDIA'20
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Design of Waveguide Directional Coupler for Electric-Field Driven GaN Mach-Zehnder Interferometer2020

    • Author(s)
      Y. Hisada, A. Tomibayashi, M. Uemukai, T. Tanikawa and R. Katayama
    • Organizer
      第39回 電子材料シンポジウム EMS39
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] ワイドギャップ半導体の分極制御と量子光学応用:遠UVC全固体光源2020

    • Author(s)
      片山 竜二,上向井 正裕,谷川 智之
    • Organizer
      第81回 応用物理学会秋季学術講演会
    • Invited
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] AlN導波路型微小二重共振器第二高調波発生デバイスの設計2020

    • Author(s)
      梅田 颯志,永田 拓実,彦坂 年輝,布上 真也,上向井 正裕,谷川 智之,片山 竜二
    • Organizer
      第67回 応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] グレーティング結合器集積GaN横型擬似位相整合第二高調波発生デバイス2020

    • Author(s)
      横山 尚生,森岡 佳紀,森川 隆哉,藤原 康文,上向井 正裕,谷川 智之,片山 竜二
    • Organizer
      第81回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Second harmonic generation devices with transverse quasi-phase-matched polarity-inverted stacked AlN waveguide2020

    • Author(s)
      A. Yamauchi,T. Komatsu,K. Ikeda,K. Uesugi,K. Shojiki,H. Miyake,T. Hikosaka,S. Nunoue,T. Morikawa,Y. Fujiwara,M. Uemukai,T. Tanikawa and R. Katayama
    • Organizer
      SPIE Photonics West 2020
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Second harmonic generation devices with transverse quasi-phase-matched polarity-inverted stacked AlN waveguide2020

    • Author(s)
      A. Yamauchi, T. Komatsu, K. Ikeda, K. Uesugi, K. Shojiki, H. Miyake, T. Hikosaka, S. Nunoue, T. Morikawa, Y. Fujiwara, M. Uemukai, T. Tanikawa and R. Katayama
    • Organizer
      SPIE Photonics West 2020
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Inductively coupled plasma reactive ion etching of GaN films maintaining surface flatness for surface activated bonding2020

    • Author(s)
      N. Yokoyama, R. Tanabe, T. Morikawa, Y. Fujiwara, M. Uemukai, T. Tanikawa, R. Katayama
    • Organizer
      第8回 発光素子とその産業応用に関する国際学会 LEDIA'20
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K22145
  • [Presentation] Design of GaN Waveguide Microcavity Device for Broadband Photon Pair Generation2020

    • Author(s)
      T. Nagata, S. Umeda, M. Uemukai, T. Tanikawa, and R. Katayama
    • Organizer
      第39回電子材料シンポジウム
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Transverse Quasi-Phase-Matched Second Harmonic Generation using Polarity-Inverted GaN Channel Waveguide with Input Grating Coupler2020

    • Author(s)
      T. Murata, N. Yokoyama, T. Komatsu, Y. Morioka, M. Uemukai, T. Tanikawa, and R. Katayama
    • Organizer
      第39回電子材料シンポジウム
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Fabrication of GaN Polarity-Inverted Structure by Inductively Coupled Plasma Reactive Ion Etching and Surface Activated Bonding2020

    • Author(s)
      Naoki Yokoyama, Ryo Tanabe, Shuhei Ichikawa, Yasufumi Fujiwara, Masahiro Uemukai, Tomoyuki Tanikawa and Ryuji Katayama
    • Organizer
      第39回 電子材料シンポジウム EMS39
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Design and Fabrication of AlN Waveguide Microcavity SHG Device2020

    • Author(s)
      Soshi Umeda*, Takumi Nagata, Masahiro Uemukai, Tomoyuki Tanikawa, and Ryuji Katayama
    • Organizer
      第39回 電子材料シンポジウム EMS39
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] ワイドギャップ窒化物半導体波長変換デバイスによる紫外光発生2020

    • Author(s)
      片山 竜二
    • Organizer
      応用電子物性分科会研究例会
    • Invited
    • Data Source
      KAKENHI-PROJECT-19K22145
  • [Presentation] Fabrication process of InGaN high-order deeply etched DBR laser2020

    • Author(s)
      A. Higuchi, D. Tazuke, M. Uemukai, T. Tanikawa, R. Katayama
    • Organizer
      The 8th International Conference on Light-Emitting Devices and Their Industrial Applications
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] グレーティング結合器集積GaN横型擬似位相整合第二高調波発生デバイス2020

    • Author(s)
      横山尚生、森岡佳紀、森川隆哉、藤原康文、上向井正裕、谷川智之、片山竜二
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] 周期的スロット構造を用いたInGaN波長可変単一モードレーザ2020

    • Author(s)
      樋口晃大、上向井正裕、谷川智之、片山竜二
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Electrical and Optical Characteristics of ITO Electrode for Electrically-Tunable Waveguide Phase Shifter2020

    • Author(s)
      A. Tomibayashi, Y. Hisada, M. Uemukai, T. Tanikawa, and R. Katayama
    • Organizer
      第39回 電子材料シンポジウム EMS39
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Design of AlN doubly-resonant waveguide microcavity SHG device2020

    • Author(s)
      S. Umeda, T. Nagata, M. Uemukai, T. Tanikawa, R. Katayama
    • Organizer
      The 8th International Conference on Light-Emitting Devices and Their Industrial Applications
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] ワイドギャップ半導体の分極制御と量子光学応用:遠UVC全固体光源2020

    • Author(s)
      片山竜二、上向井正裕、谷川智之
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] 横型擬似位相整合GaN 導波路型波長変換デバイスの開発2020

    • Author(s)
      小松 天太,彦坂 年輝,布上 真也,上向井 正裕,谷川 智之,片山 竜二
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] First Demonstration of Tunable Single-Mode InGaN Laser with Periodically Slotted Structure2020

    • Author(s)
      A. Higuchi, M. Uemukai, T. Tanikawa, and R. Katayama
    • Organizer
      第39回電子材料シンポジウム
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Design of AlN doubly-resonant waveguide microcavity SHG device2020

    • Author(s)
      S. Umeda, T. Nagata, M. Uemukai, T. Tanikawa, R. Katayama
    • Organizer
      第8回 発光素子とその産業応用に関する国際学会 LEDIA'20
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] AlN導波路第二高調波発生デバイスのための集光グレーティング結合器2019

    • Author(s)
      森岡 佳紀,上向井 正裕,上杉 謙次郎,正直 花奈子,三宅 秀人,森川 隆哉,藤原 康文,谷川 智之,片山 竜二
    • Organizer
      第80回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Fabrication of GaN doubly resonant waveguide microcavity SHG device2019

    • Author(s)
      T. Nagata,S. Umeda,T. Hikosaka,S. Nunoue,T. Morikawa,Y. Fujiwara,M. Uemukai,T. Tanikawa and R. Katayama
    • Organizer
      38th Electronic Materials Symposium
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] ワイドギャップ半導体を用いた新規波長変換デバイスの開発ー極性反転導波路と微小共振器ー2019

    • Author(s)
      片山 竜二,上向井 正裕,谷川 智之
    • Organizer
      第80回 応用物理学会秋季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-19K22145
  • [Presentation] Input Focusing Grating Coupler for AlN Deep UV Waveguide SHG Device2019

    • Author(s)
      Y. Morioka, M. Uemukai, T. Tanikawa, K. Uesugi, K. Shojiki, H. Miyake, T. Morikawa, Y. Fujiwara and R. Katayama
    • Organizer
      第7回 半導体ナノ構造のエピタキシャル成長と基礎物性に関する国際ワークショップ SEMICONNANO2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Bonding Strength of Polarity-Inverted GaN/GaN Structure Fabricated by Surface-Activated Bonding2019

    • Author(s)
      R. Tanabe, N. Yokoyama, M. Uemukai, T. Tanikawa and R. Katayama
    • Organizer
      APWS2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Fabrication of +c/-c AlN Structure toward IR Wavelength Conversion2019

    • Author(s)
      Y. Hayashi, K. Uesugi, K. Shojiki, R. Katayama, A. Sakai and H. Miyake
    • Organizer
      International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Design and Fabrication of GaN Doubly-Resonant Waveguide Microcavity SHG Device2019

    • Author(s)
      Takumi Nagata,Masahiro Uemukai,Toshiki Hikosaka,Shinya Nunoue,Takaya Morikawa,Yasufumi Fujiwara,Tomoyuki Tanikawa and Ryuji Katayama
    • Organizer
      9th Asia-Pacific Workshop on Widegap Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Bonding Strength Optimization of Polarity-Inverted GaN/GaN Structure Fabricated by Surface-Activated Bonding2019

    • Author(s)
      N. Yokoyama, R. Tanabe, M. Uemukai, T. Tanikawa and R. Katayama
    • Organizer
      第38回 電子材料シンポジウム EMS38
    • Data Source
      KAKENHI-PROJECT-19K22145
  • [Presentation] Demonstration of Transverse Quasi-Phase-Matched AlN Waveguide SHG Device Fabricated by Surface-Activated Bonding and Silicon Removal2019

    • Author(s)
      S. Yamaguchi, A. Yamauchi, T. Onodera, M. Uemukai, Y. Hayashi, H. Miyake, T. Hikosaka, S. Nunoue, K. Shiomi, Y. Fujiwara and R. Katayama
    • Organizer
      窒化物半導体国際会議 ICNS2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] ワイドギャップ半導体を用いた新規波長変換デバイスの開発ー極性反転導波路と微小共振器ー2019

    • Author(s)
      片山 竜二,上向井 正裕,谷川 智之
    • Organizer
      第80回 応用物理学会秋季学術講演会
    • Invited
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Si台座構造上 GaNモノリシック微小二重共振器型第二高調波発生デバイスの作製2019

    • Author(s)
      南部 誠明,永田 拓実,塩見 圭史,藤原 康文,大西 一生,谷川 智之,上向井 正裕,片山 竜二
    • Organizer
      第66回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] Quantum Optical Application of Nitride Semiconductor: DUV Laser and Quantum Computer2019

    • Author(s)
      R. Katayama, M. Uemukai and T. Tanikawa
    • Organizer
      紫外発光材料及びデバイスに関する国際ワークショップ IWUMD2019
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K22145
  • [Presentation] Design of GaN doubly resonant waveguide microcavity SHG device2019

    • Author(s)
      S. Umeda,T. Nagata,T. Hikosaka,S. Nuoue,T. Morikawa,Y. Fujiwara,M. Uemukai,T. Tanikawa and R. Katayama
    • Organizer
      38th Electronic Materials Symposium
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] 表面活性化接合により作製したGaN分極反転積層構造の接合強度評価2019

    • Author(s)
      田辺 凌,横山 尚生,上向井 正裕,谷川 智之,片山 竜二
    • Organizer
      第80回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] 波長変換デバイスに向けたスパッタ成膜AlNの極性制御2019

    • Author(s)
      林 侑介, 上杉 謙次郎, 正直 花奈子, 片山 竜二, 三宅 秀人
    • Organizer
      第66回 応用物理学会 春季学術講演会
    • Invited
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] 横型擬似位相整合AlN導波路による第二高調波発生の原理実証2019

    • Author(s)
      山内 あさひ,山口 修平,小野寺 卓也,林 侑介, 三宅 秀人,彦坂 年輝,布上 真也,塩見 圭史,藤原 康文,芹田 和則,川山 巌,斗内 政吉,上向井 正裕,片山 竜二
    • Organizer
      第80回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Design and Fabrication of GaN Doubly-Resonant Waveguide Microcavity SHG Device2019

    • Author(s)
      T. Nagata, M. Uemukai, , T. Hikosaka, S. Nunoue , T. Morikawa, Y. Fujiwara, T. Tanikawa and R. Katayama
    • Organizer
      APWS2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] 表面活性化接合により作製したGaN分極反転積層構造の接合強度評価2019

    • Author(s)
      田辺 凌,横山 尚生,上向井 正裕,谷川 智之,片山 竜二
    • Organizer
      第80回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K22145
  • [Presentation] GaN waveguide directional coupler and wavelength filter for optical quantum application2019

    • Author(s)
      M. Maeda, T. Komatsu, M. Kihira, T. Hikosaka, S. Nunoue, M. Uemukai, T. Tanikawa and R. Katayama
    • Organizer
      第38回 電子材料シンポジウム EMS38
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Optimization of annealing temperature to reduce contact resistance on p GaN toward fabrication of InGaN single mode laser2019

    • Author(s)
      A. Higuchi,D. Tazuke,T. Hikosaka, T. Oka,S. Nunoue,M. Uemukai,T. Tanikawa and R. Katayama
    • Organizer
      38th Electronic Materials Symposium
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Raman Scattering Investigation of Strain Evolution during Surface-Activated Bonding of GaN and Removal of Si Substrate2019

    • Author(s)
      R. Tanabe, T. Onodera, M. Uemukai, T. Hikosaka, S. Nunoue, K. Shojiki, H. Miyake, M. Kushimoto, H.J. Cheong, Y. Honda, H. Amano and R. Katayama
    • Organizer
      第7回 発光素子とその産業応用に関する国際学会 LEDIA'19
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Input Focusing Grating Coupler for Deep UV AlN Waveguide SHG Device2019

    • Author(s)
      Y. Morioka, M. Uemukai, K. Uesugi, K. Shojiki, H. Miyake, T. Morikawa, Y. Fujiwara, T. Tanikawa and R. Katayama
    • Organizer
      第38回 電子材料シンポジウム EMS38
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Focusing Grating Coupler for AlN Deep UV Waveguide SHG Device2019

    • Author(s)
      Y. Morioka, S. Yamaguchi, K. Shojiki, Y. Hayashi, H. Miyake, K. Shiomi, Y. Fujiwara, M. Uemukai and R. Katayama
    • Organizer
      第7回 発光素子とその産業応用に関する国際学会 LEDIA'19
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] AlN導波路第二高調波発生デバイスのための集光グレーティング結合器2019

    • Author(s)
      森岡 佳紀、上向井 正裕、上杉 謙次郎、正直 花奈子、三宅 秀人、森川 隆哉、藤原 康文、谷川 智之、片山 竜二
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] AlN光導波路型波長変換デバイスのための入力グレーティング結合器2019

    • Author(s)
      森岡 佳紀, 山口 修平, 正直 花奈子, 林 侑介, 三宅 秀人, 塩見 圭史, 藤原 康文, 上向井 正裕, 片山 竜二
    • Organizer
      第66回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] Design and Evaluation of Electrical and Optical Characteristics of ITO Electrode for Electric-Field Driven Optical Waveguide Devices2019

    • Author(s)
      A. Tomibayashi, M. Kihira, T. Komatsu, M. Uemukai, T. Tanikawa and R. Katayama
    • Organizer
      第38回 電子材料シンポジウム EMS38
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] GaN導波路型微小二重共振器第二高調波発生デバイスの設計と試作2019

    • Author(s)
      永田 拓実,森川 隆哉,藤原 康文 ,上向井 正裕,谷川 智之,片山 竜二
    • Organizer
      第80回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Nonlinear Optical Application of Nitride Semiconductors: Polarity-Inverted Waveguides and Microcavities2019

    • Author(s)
      R. Katayama, M. Uemukai and T. Tanikawa
    • Organizer
      固体素子と材料に関する国際会議 SSDM2019
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K22145
  • [Presentation] Bonding Strength of Polarity-Inverted GaN Structure Fabricated by Surface-Activated Bonding2019

    • Author(s)
      Ryo Tanabe,Naoki Yokoyama,Masahiro Uemukai,Tomoyuki Tanikawa and Ryuji Katayama
    • Organizer
      9th Asia-Pacific Workshop on Widegap Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Design of Deep Ultraviolet Second Harmonic Generation Device with Double-Layer Polarity-Inverted AlN Waveguide2019

    • Author(s)
      A. Yamauchi, T. Komatsu, K. Ikeda, K. Uesugi, K. Shojiki, H. Miyake, T. Hikosaka, S. Nunoue, T. Morikawa, Y. Fujiwara, M. Uemukai, T. Tanikawa and R. Katayama
    • Organizer
      APWS2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Raman Scattering Evaluation of Strain Evolution During Surface-Activated Bonding of GaN and Removal of Si Substrate2019

    • Author(s)
      R. Tanabe, N. Yokoyama, M. Uemukai, T. Hikosaka, S. Nunoue, K. Shojiki, H. Miyake, M. Kushimoto, H. Cheong, Y. Honda, H. Amano and R. Katayama
    • Organizer
      第38回 電子材料シンポジウム EMS38
    • Data Source
      KAKENHI-PROJECT-19K22145
  • [Presentation] 量子コンピュータ開発と結晶技術2019

    • Author(s)
      片山 竜二
    • Organizer
      日本学術振興会 第161委員会 第109回研究会
    • Invited
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] Benchmark of Nonlinear Optical Crystals for Single-Path Waveguide Optical Parametric Amplifier2019

    • Author(s)
      T. Komatsu, R. Noro, M. Uemukai, T. Tanikawa and R. Katayama
    • Organizer
      第38回 電子材料シンポジウム EMS38
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] 窒化物半導体波長変換デバイスの開発ー極性反転導波路と微小共振器ー2019

    • Author(s)
      片山 竜二,上向井 正裕,谷川 智之
    • Organizer
      第11回 日本結晶成長学会 ナノ構造・エピタキシャル成長講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-19K22145
  • [Presentation] 表面活性化接合により作製した GaN分極反転積層構造の接合強度評価2019

    • Author(s)
      田辺 凌、横山 尚生、上向井 正裕、谷川 智之、片山 竜二
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Benchmark of nonlinear optical crystals for single path waveguide optical parametric amplifier2019

    • Author(s)
      T. Komatsu,R. Noro,M. Uemukai,T. Tanikawa and R. Katayama
    • Organizer
      38th Electronic Materials Symposium
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Demonstration of GaN Monolithic Doubly-Resonant Microcavity SHG Device2019

    • Author(s)
      M. Uemukai, T. Nambu, T. Nagata, T. Hikosaka, S. Nunoue, K. Shiomi, Y. Fujiwara, K. Ohnishi, T. Tanikawa and R. Katayama
    • Organizer
      窒化物半導体国際会議 ICNS2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Nonlinear Optical Application of Nitride Semiconductors: Polarity-Inverted Waveguides and Microcavities2019

    • Author(s)
      R. Katayama
    • Organizer
      Workshop on Nitride Semiconductor Lasers
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] 近赤外波長変換に向けた+c AlN/-c AlN構造の作製2019

    • Author(s)
      林 侑介,上杉 謙次郎,正直 花奈子,片山 竜二,酒井 朗,三宅 秀人
    • Organizer
      第80回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] 窒化物半導体波長変換デバイスの開発ー極性反転導波路と微小共振器ー2019

    • Author(s)
      片山 竜二,上向井 正裕,谷川 智之
    • Organizer
      第11回 日本結晶成長学会 ナノ構造・エピタキシャル成長講演会
    • Invited
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Fabrication of Transverse Quasi-Phase-Matched Polarity-Inverted Stacked AlN Waveguide by Surface-Activated Bonding and Silicon Removal2019

    • Author(s)
      A. Yamauchi, S. Yamaguchi, T. Onodera, Y. Hayashi, H. Miyake, K. Shiomi, Y. Fujiwara, T. Hikosaka, S. Nunoue, M. Uemukai and R. Katayama
    • Organizer
      第7回 発光素子とその産業応用に関する国際学会 LEDIA'19
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Bonding Strength of Polarity-Inverted GaN/GaN Structure Fabricated by Surface-Activated Bonding2019

    • Author(s)
      R. Tanabe, N. Yokoyama, M. Uemukai, T. Tanikawa and R. Katayama
    • Organizer
      APWS2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K22145
  • [Presentation] Quantum Optical Application of Nitride Semiconductor2019

    • Author(s)
      R. Katayama, M. Uemukai and T. Tanikawa
    • Organizer
      International Workshop on Creation of Singularity Structures
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Design and fabrication of InGaN single mode laser with periodically slotted structure2019

    • Author(s)
      D. Tazuke,A. Higuchi,T. Hikosaka,T. Oka,S. Nunoue,M. Uemukai,T .Tanikawa and R. Katayama
    • Organizer
      38th Electronic Materials Symposium
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] 2層極性反転積層AlN光導波路を用いた深紫外域波長変換デバイスの設計2019

    • Author(s)
      山内 あさひ,小松 天太,上杉 謙次郎,正直 花奈子,三宅 秀人,彦坂 年輝,布上 真也,森川 隆哉,藤原 康文,上向井 正裕,谷川 智之,片山 竜二
    • Organizer
      第80回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] 近赤外波長変換に向けた+c/-c AlN構造の作製2019

    • Author(s)
      林 侑介,上杉 謙次郎,正直 花奈子,片山 竜二,藤平 哲也,酒井 朗,三宅 秀人
    • Organizer
      応用物理学会関西支部 2019年度第2回 支部講演会
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Input Focusing Grating Coupler for AlN Deep UV Waveguide SHG Device2019

    • Author(s)
      Y. Morioka,M. Uemukai,T. Tanikawa,K. Uesugi,K. Shojiki,H. Miyake2,T. Morikawa,Y. Fujiwara and R. Katayama
    • Organizer
      7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Fabrication of GaN doubly-resonant waveguide microcavity SHG device2019

    • Author(s)
      T. Nagata, S. Umeda, T. Hikosaka, S. Nunoue, T. Morikawa, Y. Fujiwara, M. Uemukai, T. Tanikawa and R. Katayama
    • Organizer
      第38回 電子材料シンポジウム EMS38
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Design of GaN Doubly-Resonant Waveguide Microcavity SHG Device2019

    • Author(s)
      S. Umeda, T. Nagata, T. Hikosaka, S. Nuoue, T. Morikawa, Y. Fujiwara, M. Uemukai, T. Tanikawa and R. Katayama
    • Organizer
      第38回 電子材料シンポジウム EMS38
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Bonding Strength Optimization of Polarity-Inverted GaN/GaN Structure Fabricated by Surface-Activated Bonding2019

    • Author(s)
      N. Yokoyama, R. Tanabe, M. Uemukai, T. Tanikawa and R. Katayama
    • Organizer
      第38回 電子材料シンポジウム EMS38
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] 量子光学応用のためのGaN 光導波路型波長フィルタの開発2019

    • Author(s)
      小松 天太,紀平 将史,上向井 正裕,谷川 智之,彦坂 年輝,布上 真也,片山 竜二
    • Organizer
      第80回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] First Demonstration of GaN Monolithic Doubly-Resonant Microcavity SHG Device on Si Pedestal Structure2019

    • Author(s)
      M. Uemukai, T. Nambu, T. Nagata, T. Hikosaka, S. Nunoue, K. Shiomi, Y. Fujiwara, K. Ohnishi, T. Tanikawa and R. Katayama
    • Organizer
      第7回 発光素子とその産業応用に関する国際学会 LEDIA'19
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Design of deep ultraviolet second harmonic generation device with double layer polarity inverted AlN waveguide2019

    • Author(s)
      A. Yamauchi,T. Komatsu,K. Ikeda,K. Uesugi,K. Shojiki,H. Miyake,T. Hikosaka,S. Nunoue,T. Morikawa,Y. Fujiwara,M. Uemukai,T. Tanikawa and R. Katayama
    • Organizer
      38th Electronic Materials Symposium
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] InGaN Laser Pumped Nitride Semiconductor Transverse Quasi-Phase-Matched Waveguide Second Harmonic Generation Devices2019

    • Author(s)
      M. Uemukai , S. Yamaguchi, A. Yamauchi, D. Tazuke, A. Higuchi, R. Tanabe, T. Tanikawa, T. Hikosaka, S. Nunoue, Y. Hayashi, H. Miyake, Y. Fujiwara and R. Katayama
    • Organizer
      第7回 半導体ナノ構造のエピタキシャル成長と基礎物性に関する国際ワークショップ SEMICONNANO2019
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Design of Deep Ultraviolet Second Harmonic Generation Device with Double-Layer PolarityInverted AlN Waveguide2019

    • Author(s)
      Asahi Yamauchi,Tenta Komatsu,Kazuhisa Ikeda,Kenjiro Uesugi,Kanako Syojiki,Hideto Miyake,Toshiki Hikosaka,Sinya Nunoue,Takaya Morikawa,Yasufumi Fujiwara,Masahiro Uemukai,Tomoyuki Tanikawa and Ryuji Katayama
    • Organizer
      9th Asia-Pacific Workshop on Widegap Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Fabrication of GaN monolithic doubly-resonant microcavity SHG device on Si trapezoidal structure2019

    • Author(s)
      T. Nambu, T. Komatsu, M. Uemukai, K. Shiomi, Y. Fujiwara and R. Katayama
    • Organizer
      SPIE Photonics West 2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] 2層極性反転積層 AlN導波路を用いた深紫外第二高調波発生デバイスの設計2019

    • Author(s)
      山内 あさひ、小松 天太、池田 和久、上杉 謙二郎、正直 花奈子、三宅 秀人、彦坂 年輝、布上 真也、森川 隆哉、藤原 康文、上向井 正裕、谷川 智之、片山 竜二
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Nonlinear Optical Application of Nitride Semiconductors: Polarity-Inverted Waveguides and Microcavities2019

    • Author(s)
      R. Katayama, M. Uemukai and T. Tanikawa
    • Organizer
      固体素子と材料に関する国際会議 SSDM2019
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Raman Scattering Evaluation of Strain Evolution During Surface-Activated Bonding of GaN and Removal of Si Substrate2019

    • Author(s)
      R. Tanabe, N. Yokoyama, M. Uemukai, T. Hikosaka, S. Nunoue, K. Shojiki, H. Miyake, M. Kushimoto, H. Cheong, Y. Honda, H. Amano and R. Katayama
    • Organizer
      第38回 電子材料シンポジウム EMS38
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Design of Deep Ultraviolet Second Harmonic Generation Device with Double-Layer Polarity-Inverted AlN Waveguide2019

    • Author(s)
      A. Yamauchi, T. Komatsu, K. Ikeda, K. Uesugi, K. Shojiki, H. Miyake, T. Hikosaka, S. Nunoue, T. Morikawa, Y. Fujiwara, M. Uemukai, T. Tanikawa and R. Katayama
    • Organizer
      第38回 電子材料シンポジウム EMS38
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Quantum Optical Application of Nitride Semiconductor2019

    • Author(s)
      R. Katayama, M. Uemukai and T. Tanikawa
    • Organizer
      International Workshop on Creation of Singularity Structures
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K22145
  • [Presentation] Design of GaN-waveguide-based Mach-Zehnder Interferometer Compatible to the Optical Waveguide-based Quantum Computer2019

    • Author(s)
      T. Komatsu, M. Kihira, A. Tomibayashi, M. Uemukai and R. Katayama
    • Organizer
      第7回 発光素子とその産業応用に関する国際学会 LEDIA'19
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] InGaN Laser Pumped Nitride Semiconductor Transverse Quasi-Phase-Matched Waveguide Second Harmonic Generation Devices2019

    • Author(s)
      M. Uemukai,S. Yamaguchi,A. Yamauchi,D. Tazuke,A. Higuchi,R. Tanabe,T. Tanikawa,T. Hikosaka,S. Nunoue,Y. Hayashi,H. Miyake,Y. Fujiwara and R. Katayama
    • Organizer
      7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] Nonlinear Optical Application of Nitride Semiconductors: Polarity-Inverted Waveguides and Microcavities2019

    • Author(s)
      R. Katayama
    • Organizer
      Workshop on Nitride Semiconductor Lasers
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K22145
  • [Presentation] ラマン散乱による表面活性化接合前後のGaN薄膜中の歪変化の評価2019

    • Author(s)
      田辺 凌, 小野寺 卓也,上向井 正裕, 彦坂 年輝, 布上 真也,正直 花奈子,三宅 秀人,久志本 真希,鄭 惠貞,本田 善央,天野 浩,片山 竜二
    • Organizer
      第66回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] Quantum Optical Application of Nitride Semiconductor: DUV Laser and Quantum Computer2019

    • Author(s)
      R. Katayama, M. Uemukai and T. Tanikawa
    • Organizer
      紫外発光材料及びデバイスに関する国際ワークショップ IWUMD2019
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Development of GaN Waveguide Wavelength Filter for Quantum Optical Application2019

    • Author(s)
      T. Komatsu, M. Kihira, T. Hikosaka, S. Nunoue, M. Uemukai, T. Tanikawa and R. Katayama
    • Organizer
      APWS2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-19H04543
  • [Presentation] Raman Scattering Investigation of Strain Evolution during Surface-Activated Bonding of GaN and Removal of Si Substrate2019

    • Author(s)
      R. Tanabe, T. Onodera, M. Uemukai, T. Hikosaka, S. Nunoue, K. Shojiki, H. Miyake, M. Kushimoto, H.J. Cheong, Y. Honda, H. Amano and R. Katayama
    • Organizer
      第7回 発光素子とその産業応用に関する国際学会 LEDIA'19
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K22145
  • [Presentation] Input grating coupler for AlN channel waveguide wavelength conversion device2019

    • Author(s)
      Y. Morioka,M. Uemukai,K. Uesugi,K. Shojiki,H. Miyake,T. Morikawa,Y. Fujiwara,T. Tanikawa and R. Katayama
    • Organizer
      38th Electronic Materials Symposium
    • Data Source
      KAKENHI-PROJECT-19H02631
  • [Presentation] GaNモノリシック微小二重共振器型第二高調波発生デバイスの作製2018

    • Author(s)
      南部 誠明,上向井 正裕,藤 諒健,山田 智也,藤原 康文,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] GaNモノリシック微小二重共振器型第二高調波発生デバイスの作製2018

    • Author(s)
      南部 誠明,上向井 正裕,藤 諒健,山田 智也,藤原 康文,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] Fabrication of GaN Monolithic Doubly-Resonant Microcavity SHG Device2018

    • Author(s)
      T. Nambu, T. Komatsu, K. Shiomi, Y. Fujiwara, M. Uemukai and R. Katayama
    • Organizer
      第37回 電子材料シンポジウム EMS37
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] 深溝周期構造を用いたGaAsP量子井戸波長可変単一モードレーザー2018

    • Author(s)
      上向井 正裕,片山 竜二
    • Organizer
      第38回 レーザー学会 学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] 横型疑似位相整合極性反転AlN導波路を用いた深紫外光源2018

    • Author(s)
      片山 竜二,山口 修平,小野寺 卓也,山内 あさひ,上向井 正裕,林 侑介,三宅 秀人
    • Organizer
      電子情報通信学会 2018年ソサイエティ大会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] Fabrication of Transverse Quasi-Phase-Matched Polarity-Inverted Stacked AlN Waveguide by Surface-Activated Bonding and Silicon Removal2018

    • Author(s)
      S. Yamaguchi, T. Onodera, Y. Hayashi, H. Miyake, K. Shiomi, Y. Fujiwara, T. Hikosaka, S. Nunoue, M. Uemukai and R. Katayama
    • Organizer
      第37回 電子材料シンポジウム EMS37
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] 深溝周期構造を用いたGaAsP量子井戸波長可変単一モードレーザー2018

    • Author(s)
      上向井 正裕,片山 竜二
    • Organizer
      第38回 レーザー学会 学術講演会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] Fabrication of GaN Monolithic Doubly-Resonant Microcavity SHG Device on Si Substrate2018

    • Author(s)
      T. Nambu, T. Komatsu, M. Uemukai, K. Shiomi, Y. Fujiwara, J. Tajima, T. Hikosaka, S. Nunoue and R. Katayama
    • Organizer
      窒化物半導体国際ワークショップ IWN2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] Area Expansion of Surface-Activated Wafer Bonding using GaN Samples with Improved Surface Smoothness and Reduced Curvature2018

    • Author(s)
      T. Onodera, R. Tanabe, M. Uemukai, T. Hikosaka, S. Nunoue, M. Kushimoto, H.J. Cheong, Y. Honda, H. Amano and R. Katayama
    • Organizer
      窒化物半導体国際ワークショップ IWN2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] 深紫外SHGに向けたウェハ接合型AlN極性反転構造2018

    • Author(s)
      林 侑介, 片山 竜二, 三宅 秀人
    • Organizer
      第10回 日本結晶成長学会 ナノ構造・エピタキシャル成長講演会
    • Invited
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] Fabrication of GaN Monolithic Doubly-Resonant Microcavity SHG Device2018

    • Author(s)
      T. Nambu, T. Komatsu, K. Shiomi, Y. Fujiwara, M. Uemukai and R. Katayama
    • Organizer
      第37回 電子材料シンポジウム EMS37
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] 窒化物半導体極性制御特異構造の非線形光学素子応用2018

    • Author(s)
      片山竜二
    • Organizer
      科学研究費補助金 新学術領域研究 領域報告会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] ZnO系ワイドギャップ半導体微小共振器を用いた量子相関光子対発生素子の設計2018

    • Author(s)
      矢野 岳人,上向井 正裕,片山 竜二
    • Organizer
      第10回 日本結晶成長学会 ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] Si台座構造上 GaNモノリシック微小二重共振器型第二高調波発生デバイスの作製2018

    • Author(s)
      南部 誠明,永田 拓実,塩見 圭史,藤原 康文,大西 一生,谷川 智之,上向井 正裕,片山 竜二
    • Organizer
      第66回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] 量子光学応用のための光導波路型マッハツェンダ干渉計の開発:GaNストリップ導波路型方向性結合器の設計2018

    • Author(s)
      紀平 将史,三輪 純也,上向井 正裕,藤 諒健,藤原 康文,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] ZrO2 /AlN積層導波路を用いた深紫外第二高調波発生デバイスの設計2018

    • Author(s)
      山口 修平,上向井 正裕,髙橋 一矢,岩谷 素顕,赤﨑 勇,林 侑介,三宅 秀人,山田 智也,藤原 康文,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] 横型疑似位相整合極性反転AlN導波路を用いた深紫外光源2018

    • Author(s)
      片山 竜二,山口 修平,小野寺 卓也,山内 あさひ,上向井 正裕,林 侑介,三宅 秀人
    • Organizer
      電子情報通信学会 2018年ソサイエティ大会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] 表面活性化接合とSi基板剥離によるGaN極性反転構造の作製2018

    • Author(s)
      小野寺 卓也,上向井 正裕,髙橋 一矢,岩谷 素顕,赤﨑 勇,林 侑介,三宅 秀人,久志本 真希,鄭 惠貞,本田 善央,天野 浩,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] 周期的スロット構造を用いたGaAsP波長可変単一モードレーザ2018

    • Author(s)
      楠本 壮,上向井 正裕,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] Second harmonic generation from polarity-inverted GaN waveguide2018

    • Author(s)
      R. Katayama
    • Organizer
      SPIE Photonics West 2018
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] Design of Transverse Quasi-Phase-Matched AlN Tapered Waveguide SHG Device for Broadening Wavelength Acceptance Bandwidth2018

    • Author(s)
      A. Yamauchi, S. Yamaguchi, Y. Hayashi, H. Miyake, K. Shiomi, Y. Fujiwara, M. Uemukai and R. Katayama
    • Organizer
      IEEE Photonics Society Kansai Chapter 第4回フォトニクス英語発表会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] 周期的スロット構造を用いたGaAsP波長可変単一モードレーザ2018

    • Author(s)
      楠本 壮,上向井 正裕,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] ZrO2 /AlN積層導波路を用いた深紫外第二高調波発生デバイスの設計2018

    • Author(s)
      山口 修平,上向井 正裕,髙橋 一矢,岩谷 素顕,赤﨑 勇,林 侑介,三宅 秀人,山田 智也,藤原 康文,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] Input Grating Coupler for AlN Channel Waveguide Wavelength Conversion Device2018

    • Author(s)
      Y. Morioka, S. Yamaguchi, Y. Hayashi, H. Miyake,K. Shiomi, Y. Fujiwara, M. Uemukai and R. Katayama
    • Organizer
      第37回 電子材料シンポジウム EMS37
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] 量子コンピュータ開発と結晶技術2018

    • Author(s)
      片山 竜二
    • Organizer
      日本学術振興会 第161委員会 第109回研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] 表面活性化接合とSi基板剥離によるGaN極性反転構造の作製2018

    • Author(s)
      小野寺 卓也,上向井 正裕,髙橋 一矢,岩谷 素顕,赤﨑 勇,林 侑介,三宅 秀人,久志本 真希,鄭 惠貞,本田 善央,天野 浩,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] Second harmonic generation from polarity-inverted GaN waveguide2018

    • Author(s)
      R. Katayama
    • Organizer
      SPIE Photonics West 2018
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] Design and Fabrication of GaN Monolithic Doubly-Resonant Microcavity SHG Device2018

    • Author(s)
      T. Nambu, M. Uemukai, R. Fuji, T. Yamada, Y. Fujiwara and R. Katayama
    • Organizer
      第19回 有機金属気相成長法に関する国際会議 ICMOVPE-XIX
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] 量子光学応用のための光導波路型マッハツェンダ干渉計の開発:GaNリブ導波路型方向性結合器の特性評価2018

    • Author(s)
      三輪 純也,紀平 将史,上向井 正裕,藤 諒健,藤原 康文,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] 窒化物半導体極性制御特異構造の非線形光学素子応用2018

    • Author(s)
      片山竜二
    • Organizer
      科学研究費補助金 新学術領域研究 領域報告会
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] 波長許容幅拡大を目指した横型擬似位相整合AlNテーパ導波路SHGデバイスの設計2018

    • Author(s)
      山口 修平,山内 あさひ,上向井 正裕,林 侑介,三宅 秀人,塩見 圭史,藤原 康文,片山 竜二
    • Organizer
      第79回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] Design and Fabrication of GaN Monolithic Doubly-Resonant Microcavity SHG Device2018

    • Author(s)
      T. Nambu, M. Uemukai, R. Fuji, T. Yamada, Y. Fujiwara and R. Katayama
    • Organizer
      第19回 有機金属気相成長法に関する国際会議 ICMOVPE-XIX
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] Design of Transverse Quasi-Phase-Matched AlN Waveguide for Deep UV Second Harmonic Generation2018

    • Author(s)
      S. Yamaguchi, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake, T. Yamada, Y. Fujiwara and R. Katayama
    • Organizer
      第6回 発光素子とその産業応用に関する国際学会 LEDIA'18
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] GaNモノリシック微小二重共振器型第二高調波発生デバイスの作製2018

    • Author(s)
      南部 誠明,上向井 正裕,藤 諒健,山田 智也,藤原 康文,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] Area Expansion of Surface-Activated Wafer Bonding using GaN Samples with Improved Surface Smoothness and Reduced Curvature2018

    • Author(s)
      T. Onodera, R. Tanabe, T. Hikosaka, S. Nunoue, M. Kushimoto, H.J. Cheong, Y. Honda, H. Amano, M. Uemukai and R. Katayama
    • Organizer
      第37回 電子材料シンポジウム EMS37
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] Fabrication of GaN Monolithic Doubly-Resonant Microcavity SHG Device on Si Substrate2018

    • Author(s)
      T. Nambu, T. Komatsu, M. Uemukai, K. Shiomi, Y. Fujiwara, J. Tajima, T. Hikosaka, S. Nunoue and R. Katayama
    • Organizer
      窒化物半導体国際ワークショップ IWN2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] Design of ZnO-Based Microcavities with SiO2/ZrO2 Distributed Bragg Reflectors for Entangled Photon Pair Generation2018

    • Author(s)
      Y. Matsui, T. Yano, M. Uemukai and R. Katayama
    • Organizer
      第37回 電子材料シンポジウム EMS37
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] ZrO2 /AlN積層導波路を用いた深紫外第二高調波発生デバイスの設計2018

    • Author(s)
      山口 修平,上向井 正裕,髙橋 一矢,岩谷 素顕,赤﨑 勇,林 侑介,三宅 秀人,山田 智也,藤原 康文,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] Fabrication of Polarity-Inverted GaN Heterostructure by Surface-Activated Wafer Bonding and Silicon Removal2018

    • Author(s)
      T. Onodera, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake, M. Kushimoto, H. Cheong, Y. Honda, H. Amano and R. Katayama
    • Organizer
      第6回 発光素子とその産業応用に関する国際学会 LEDIA'18
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] 表面活性化接合とSi基板除去によるGaN極性反転構造の作製2018

    • Author(s)
      小野寺 卓也,上向井 正裕,髙橋 一矢,岩谷 素顕,赤﨑 勇,林 侑介,三宅 秀人,久志本 真希,鄭 惠貞,本田 善央,天野 浩,片山 竜二
    • Organizer
      第10回 日本結晶成長学会 ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] 表面活性化接合とSi基板剥離によるGaN極性反転構造の作製2018

    • Author(s)
      小野寺 卓也,上向井 正裕,髙橋 一矢,岩谷 素顕,赤﨑 勇,林 侑介,三宅 秀人,久志本 真希,鄭 惠貞,本田 善央,天野 浩,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] 深溝周期構造を用いたGaAsP量子井戸波長可変単一モードレーザー2018

    • Author(s)
      上向井 正裕,片山 竜二
    • Organizer
      第38回 レーザー学会 学術講演会
    • Invited
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] 量子光学応用のための光導波路型マッハツェンダ干渉計の開発:GaNストリップ導波路型方向性結合器の設計2018

    • Author(s)
      紀平 将史,三輪 純也,上向井 正裕,藤 諒健,藤原 康文,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] 量子光学応用のための光導波路型マッハツェンダ干渉計の開発:GaNリブ導波路型方向性結合器の特性評価2018

    • Author(s)
      三輪 純也,紀平 将史,上向井 正裕,藤 諒健,藤原 康文,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] 量子相関光子対発生に向けたZnO/ZnMgO多重量子井戸微小共振器の設計2018

    • Author(s)
      矢野 岳人,松井 裕輝,上向井 正裕,片山 竜二
    • Organizer
      第66回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] 窒化物半導体極性制御特異構造の非線形光学素子応用2018

    • Author(s)
      片山竜二
    • Organizer
      科学研究費補助金 新学術領域研究 領域報告会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] 表面活性化接合を用いた大面積GaN極性反転構造の作製2018

    • Author(s)
      小野寺 卓也,上向井 正裕,髙橋 一矢 ,岩谷 素顕,赤﨑 勇,林 侑介, 三宅 秀人,久志本 真希,鄭 惠貞,本田 善央,天野 浩,片山 竜二
    • Organizer
      第79回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] Fabrication of GaN monolithic doubly-resonant microcavity SHG device on Si trapezoidal structure2018

    • Author(s)
      T. Nambu, T. Komatsu, M. Uemukai, K. Shiomi, Y. Fujiwara and R. Katayama
    • Organizer
      SPIE Photonics West 2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] Design of Transverse Quasi-Phase-Matched AlN Tapered Waveguide SHG Device for Broadening Wavelength Acceptance Bandwidth2018

    • Author(s)
      A. Yamauchi, S. Yamaguchi, Y. Hayashi, H. Miyake,K. Shiomi, Y. Fujiwara, M. Uemukai and R. Katayama
    • Organizer
      第37回 電子材料シンポジウム EMS37
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] Second harmonic generation from polarity-inverted GaN waveguide2018

    • Author(s)
      R. Katayama
    • Organizer
      SPIE Photonics West 2018
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] 周期的スロット構造を用いたGaAsP波長可変単一モードレーザ2018

    • Author(s)
      楠本 壮,上向井 正裕,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] 量子光学応用のための光導波路型マッハツェンダ干渉計の開発:GaNストリップ導波路型方向性結合器の設計2018

    • Author(s)
      紀平 将史,三輪 純也,上向井 正裕,藤 諒健,藤原 康文,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] 量子光学応用のための光導波路型マッハツェンダ干渉計の開発:GaNリブ導波路型方向性結合器の特性評価2018

    • Author(s)
      三輪 純也,紀平 将史,上向井 正裕,藤 諒健,藤原 康文,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] 高次結合ディープエッチDBRレーザの作製と単一モード発振2017

    • Author(s)
      山下 諒大、上向井 正裕、片山 竜二
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] GaNモノリシック微小二重共振器型第二高調波発生デバイスの設計2017

    • Author(s)
      南部 誠明,上向井 正裕,藤 諒健,山田 智也,藤原 康文,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] 窒化物半導体極性制御特異構造の非線形光学素子応用2017

    • Author(s)
      片山 竜二
    • Organizer
      科学研究費補助金 新学術領域研究 領域報告会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] Design of polarity-inverted multilayer AlN waveguide for deep UV second harmonic generation2017

    • Author(s)
      S. Yamaguchi, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake, T. Yamada, Y. Fujiwara and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] Design of polarity-inverted multilayer AlN waveguide for deep UV second harmonic generation2017

    • Author(s)
      S. Yamaguchi, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake, T. Yamada, Y. Fujiwara and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] Development of Surface-Activated Wafer Bonding Method of AlN, GaN and LiNbO32017

    • Author(s)
      T. Onodera, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake and R. Katayama
    • Organizer
      紫外発光材料及びデバイスに関する国際ワークショップ IWUMD2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] Polarity inversion of AlN fabricated by wafer bonding and its atomic arrangement models2017

    • Author(s)
      Y. Hayashi, H. Miyake,K. Hiramatsu, T. Akiyama, T. Ito and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] Development of Surface-Activated Wafer Bonding Method of AlN, GaN and LiNbO32017

    • Author(s)
      T. Onodera, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake and R. Katayama
    • Organizer
      紫外発光材料及びデバイスに関する国際ワークショップ IWUMD2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] GaN rib waveguide directional coupler for optical quantum information processing systems2017

    • Author(s)
      J. Miwa, M. Kihira, M. Uemukai, R. Fuji, Y. Fujiwara and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] AlN・GaN・LiNbO3の表面活性化ウエハ接合技術の開発2017

    • Author(s)
      小野寺 卓也,上向井 正裕,髙橋 一矢,岩谷 素顕,赤﨑 勇,林 侑介,三宅 秀人,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] GaAsP quantum well tunable single-mode semiconductor lasers with deeply etched periodic structures2017

    • Author(s)
      M. Uemukai, A. Yamashita, S. Kusumoto, R. Katayama
    • Organizer
      発光素子とその産業応用に関する国際学会 LEDIA'17
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] GaN rib waveguide directional coupler for optical quantum information processing systems2017

    • Author(s)
      J. Miwa, M. Kihira, M. Uemukai, R. Fuji, Y. Fujiwara and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] 量子光学応用のための光導波路型マッハツェンダ干渉計の開発:GaNリブ導波路型方向性結合器の作製2017

    • Author(s)
      三輪 純也,上向井 正裕,藤 諒健,藤原 康文,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] GaN rib waveguide directional coupler for optical quantum information processing systems2017

    • Author(s)
      J. Miwa, M. Kihira, M. Uemukai, R. Fuji, Y. Fujiwara and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] AlN・GaN・LiNbO3の表面活性化ウエハ接合技術の開発2017

    • Author(s)
      小野寺 卓也,上向井 正裕,髙橋 一矢,岩谷 素顕,赤﨑 勇,林 侑介,三宅 秀人,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] GaAsP quantum well single-mode semiconductor laser with periodically slotted structure2017

    • Author(s)
      S. Kusumoto, M. Uemukai and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] ワイドギャップ窒化物半導体による量子情報処理システム開発2017

    • Author(s)
      片山竜二
    • Organizer
      日本学術振興会 第162委員会 第106回研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] ワイドギャップ半導体の量子光学素子応用2017

    • Author(s)
      片山竜二
    • Organizer
      第64回応用物理学会春季学術講演会 シンポジウム 金属酸化物の結晶物性に迫る
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Invited
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] 量子光学応用のための光導波路型マッハツェンダ干渉計の開発:GaNリブ導波路型方向性結合器の作製2017

    • Author(s)
      三輪 純也,上向井 正裕,藤 諒健,藤原 康文,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] 極性反転積層AlN光導波路を用いた波長変換デバイスの設計2017

    • Author(s)
      山口 修平,上向井 正裕,髙橋 一矢,岩谷 素顕,赤﨑 勇,林 侑介,三宅 秀人,山田 智也,藤原 康文,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] Abrupt Polarity Inversion of AlN for Second Harmonic Generation in DUV Region2017

    • Author(s)
      Y. Hayashi, H. Miyake,K. Hiramatsu, T. Akiyama, T. Ito and R. Katayama
    • Organizer
      紫外発光材料及びデバイスに関する国際ワークショップ IWUMD2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] GaAsP quantum well single-mode semiconductor laser with periodically slotted structure2017

    • Author(s)
      S. Kusumoto, M. Uemukai and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] Development of Surface-Activated Wafer Bonding Method of AlN, GaN and LiNbO32017

    • Author(s)
      T. Onodera, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] GaAsP quantum well single-mode semiconductor laser with periodically slotted structure2017

    • Author(s)
      S. Kusumoto, M. Uemukai and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] 窒化物半導体極性制御特異構造の非線形光学素子応用2017

    • Author(s)
      片山 竜二
    • Organizer
      科学研究費補助金 新学術領域研究 領域報告会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] GaAsP quantum well tunable single-mode semiconductor lasers with deeply etched periodic structures2017

    • Author(s)
      M. Uemukai, A. Yamashita, S. Kusumoto, R. Katayama
    • Organizer
      発光素子とその産業応用に関する国際学会 LEDIA'17
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] Polarity inversion of AlN fabricated by wafer bonding and its atomic arrangement models2017

    • Author(s)
      Y. Hayashi, H. Miyake,K. Hiramatsu, T. Akiyama, T. Ito and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] AlN・GaN・LiNbO3の表面活性化ウエハ接合技術の開発2017

    • Author(s)
      小野寺 卓也,上向井 正裕,髙橋 一矢,岩谷 素顕,赤﨑 勇,林 侑介,三宅 秀人,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] 極性反転積層AlN光導波路を用いた波長変換デバイスの設計2017

    • Author(s)
      山口 修平,上向井 正裕,髙橋 一矢,岩谷 素顕,赤﨑 勇,林 侑介,三宅 秀人,山田 智也,藤原 康文,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] Design of GaN monolithic doubly-resonant microcavity SHG device2017

    • Author(s)
      T. Nambu, M. Uemukai, R. Fuji, T. Yamada, Y. Fujiwara and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] Face to FaceアニールによるAlN分極反転構造の作製と評価2017

    • Author(s)
      林 侑介,三宅 秀人,平松 和政,片山 竜二
    • Organizer
      第9回 ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] Development of Surface-Activated Wafer Bonding Method of AlN, GaN and LiNbO32017

    • Author(s)
      T. Onodera, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] Design of GaN monolithic doubly-resonant microcavity SHG device2017

    • Author(s)
      T. Nambu, M. Uemukai, R. Fuji, T. Yamada, Y. Fujiwara and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] Polarity inversion of AlN fabricated by wafer bonding and its atomic arrangement models2017

    • Author(s)
      Y. Hayashi, H. Miyake,K. Hiramatsu, T. Akiyama, T. Ito and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] GaNモノリシック微小二重共振器型第二高調波発生デバイスの設計2017

    • Author(s)
      南部 誠明,上向井 正裕,藤 諒健,山田 智也,藤原 康文,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] GaNモノリシック微小二重共振器型第二高調波発生デバイスの設計2017

    • Author(s)
      南部 誠明,上向井 正裕,藤 諒健,山田 智也,藤原 康文,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] 疑似位相整合SHGに向けたFace to FaceアニールによるAlN分極反転構造の作製2017

    • Author(s)
      林 侑介,三宅 秀人,平松 和政,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] 疑似位相整合SHGに向けたFace to FaceアニールによるAlN分極反転構造の作製2017

    • Author(s)
      林 侑介,三宅 秀人,平松 和政,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] 窒化物半導体極性制御特異構造の非線形光学素子応用2017

    • Author(s)
      片山 竜二
    • Organizer
      科学研究費補助金 新学術領域研究 領域報告会
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] Development of Surface-Activated Wafer Bonding Method of AlN, GaN and LiNbO32017

    • Author(s)
      T. Onodera, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] Design of GaN monolithic doubly-resonant microcavity SHG device2017

    • Author(s)
      T. Nambu, M. Uemukai, R. Fuji, T. Yamada, Y. Fujiwara and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] GaAsP quantum well tunable single-mode semiconductor lasers with deeply etched periodic structures2017

    • Author(s)
      M. Uemukai, A. Yamashita, S. Kusumoto, R. Katayama
    • Organizer
      発光素子とその産業応用に関する国際学会 LEDIA'17
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] Design of polarity-inverted multilayer AlN waveguide for deep UV second harmonic generation2017

    • Author(s)
      S. Yamaguchi, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake, T. Yamada, Y. Fujiwara and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] Development of Surface-Activated Wafer Bonding Method of AlN, GaN and LiNbO32017

    • Author(s)
      T. Onodera, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake and R. Katayama
    • Organizer
      紫外発光材料及びデバイスに関する国際ワークショップ IWUMD2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] 疑似位相整合SHGに向けたFace to FaceアニールによるAlN分極反転構造の作製2017

    • Author(s)
      林 侑介,三宅 秀人,平松 和政,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] 極性ワイドギャップ半導体の量子光学応用2017

    • Author(s)
      片山竜二
    • Organizer
      IEEE Photonics Society Kansai Chapter 講演会
    • Place of Presentation
      伊勢市観光文化会館(三重県・伊勢市)
    • Year and Date
      2017-01-18
    • Invited
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] 極性反転積層AlN光導波路を用いた波長変換デバイスの設計2017

    • Author(s)
      山口 修平,上向井 正裕,髙橋 一矢,岩谷 素顕,赤﨑 勇,林 侑介,三宅 秀人,山田 智也,藤原 康文,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] ワイドギャップ窒化物半導体による量子情報処理システム開発2017

    • Author(s)
      片山竜二
    • Organizer
      日本学術振興会 第162委員会 第106回研究会
    • Invited
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] ワイドギャップ窒化物半導体による量子情報処理システム開発2017

    • Author(s)
      片山竜二
    • Organizer
      日本学術振興会 第162委員会 第106回研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] AlN系窒化物半導体のウェハ接合技術の検討2017

    • Author(s)
      高橋 一矢、篠田 涼二、岩谷 素顕、竹内 哲也、上山 智、服部 友一、赤崎 勇、片山 竜二、上向井 正裕
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] 量子光学応用のための光導波路型マッハツェンダ干渉計の開発:GaNリブ導波路型方向性結合器の作製2017

    • Author(s)
      三輪 純也,上向井 正裕,藤 諒健,藤原 康文,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] ワイドギャップ半導体研究の新展開 量子光学デバイス・システム開発2016

    • Author(s)
      片山竜二
    • Organizer
      第1回 電子材料若手研究会
    • Place of Presentation
      広島大学(広島県・東広島市)
    • Invited
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] ワイドギャップ半導体の 量子光学応用2016

    • Author(s)
      片山竜二
    • Organizer
      第9回 窒化物半導体の成長・評価に関する夏期セミナー
    • Place of Presentation
      立命館大学(滋賀県・草津市)
    • Year and Date
      2016-08-29
    • Invited
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] 窒化物半導体極性制御特異構造の非線形光学素子応用2016

    • Author(s)
      片山竜二
    • Organizer
      第77回応用物理学会秋季学術講演会 シンポジウム 窒化物半導体特異構造の科学 ~新機能の発現と理解~
    • Place of Presentation
      朱鷺メッセ(新潟県・新潟市)
    • Year and Date
      2016-09-13
    • Invited
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] Polarity-controlled MOVPE growth of GaN on PLD-AlN templates2015

    • Author(s)
      J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama and T. Matsuoka
    • Organizer
      The 34th Electronic Materials Symposium
    • Place of Presentation
      ラフォーレ琵琶湖、滋賀県守山市
    • Year and Date
      2015-07-15
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] Polarity control of MOVPE-grown GaN on AlN/GaN templates2015

    • Author(s)
      J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama and T. Matsuoka
    • Organizer
      日本結晶成長学会 ナノ構造エピタキシャル成長分科会 第7回 窒化物半導体研究会
    • Place of Presentation
      東北大学 片平さくらホール、宮城県仙台市
    • Year and Date
      2015-05-07
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] 横型疑似位相整合AlN導波路を用いた深紫外第二高調波発生素子の設計2015

    • Author(s)
      三谷 悠貴,片山 竜二,劉 陳燁,正直 花奈子,谷川 智之,窪谷 茂幸,松岡 隆志
    • Organizer
      日本結晶成長学会 ナノ構造エピタキシャル成長分科会 第7回 窒化物半導体研究会
    • Place of Presentation
      東北大学 片平さくらホール、宮城県仙台市
    • Year and Date
      2015-05-07
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] Realization of p-Type Conduction in Mg-Doped N-Polar (000-1) GaN Grown by Metalorganic Vapor Phase Epitaxy2014

    • Author(s)
      T. Tanikawa, J. H. Choi, K. Shojiki, S. Kuboya, R. Katayama, and T. Matsuoka
    • Organizer
      Conference on LED and it’s industrial application ‘14
    • Place of Presentation
      Yokohama, Japan
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Suppression of Metastable-Phase Inclusion in MOVPE-Grown N-Polar (000-1) InGaN/GaN Multiple Quantum Wells2014

    • Author(s)
      K. Shojiki, J. H. Choi, T. Iwabuchi, N. Usami, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka
    • Organizer
      Conference on LED and it’s industrial application ‘14
    • Place of Presentation
      Yokohama, Japan
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] MOVPE成長 -c面InGaN/GaN多重量子井戸構造における準安定相混在の抑制2014

    • Author(s)
      正直花奈子,崔正焄,岩渕拓也,宇佐美徳隆,谷川智之,窪谷茂幸,花田貴,片山竜二,松岡隆志
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学淵野辺キャンパス
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] c面Al2O3基板上にMOVPE成長したGaNの異常分散X線回折による極性判定2014

    • Author(s)
      花田貴,稲葉克彦,正直花奈子,崔正焄,片山竜二,谷川智之,窪谷茂幸,松岡隆志
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学淵野辺キャンパス
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Observation of Indium Content Distribution on m-plane InGaN Film with Hilloks2014

    • Author(s)
      K. Shojiki, T. Hanada, J. H. Choi, Y. Imai, S. Kimura, T. Shimada, T. Tanikawa, R. Katayama, T. Matsuoka
    • Organizer
      2013 Annual Meeting of Excellent Graduate School for "Materials Integration Center" and "Materials Science Center" & International Workshop on Advanced Materials Synthesis Process and Nanostructure
    • Place of Presentation
      Sendai, Japan
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Crystallographic Polarity Dependence of Surface Morphology Evolution during MOVPE Growth of GaN/Sapphire2013

    • Author(s)
      N. Yoshinogawa, T. Iwabuchi, K. Shojiki, T. Kimura, T. Tanikawa, R. Katayama and T. Matsuoka
    • Organizer
      第32回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Effect of c-plane Sapphire Substrate Miscut-angle on Indium Content of MOVPE-grown N-polar InGaN2013

    • Author(s)
      K. Shojiki, J.-H. Choi, H. Shindo, T. Kimura, T. Tanikawa, T. Hanada, R. Katayama, and T. Matsuoka
    • Organizer
      2013 JSAP-MRS Joint Symposia
    • Place of Presentation
      Kyoto, Japan
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Inサーファクタントによる(0001)GaNのMOVPE成長におけるステップフロー成長の促進2013

    • Author(s)
      逢坂崇,谷川智之,正直花奈子,木村健司,岩渕拓也,花田貴,片山竜二,松岡隆志
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] mprovement of Surface Morphology in (000-1) GaN/Sapphire Grown by MOVPE with Indium Surfactant2013

    • Author(s)
      T. Aisaka, T. Tanikawa, T. Kimura, T. Iwabuchi, K. Shojiki, R. Katayama, T. Hanada, and T. Matsuoka
    • Organizer
      40th Intern. Symp. on Comp. Semcond. (ISCS2013)
    • Place of Presentation
      Kobe, Japan
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Enhancement of Surface Migration by Mg Doping in the Metalorganic Vapor Phase Epitaxy of (000-1) GaN/sapphire2013

    • Author(s)
      T. Tanikawa, T. Aisaka, T. Kimura, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka
    • Organizer
      2013 JSAP-MRS Joint Symposia
    • Place of Presentation
      Kyoto, Japan
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] 窒化物半導体フォトニックナノ構造の量子光学応用2013

    • Author(s)
      片山竜二(他7名)
    • Organizer
      第5回窒化物半導体結晶成長講演会
    • Place of Presentation
      大阪
    • Year and Date
      2013-07-11
    • Invited
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Crystallographic Polarity Dependence of Surface Morphology Evolution during MOVPE Growth of GaN/Sapphire2013

    • Author(s)
      N. Yoshinogawa and R. Katayama(他5名、6番)
    • Organizer
      The 32nd Electron. Mater. Symp
    • Place of Presentation
      Shiga
    • Year and Date
      2013-07-11
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] ヒロック形成にともなうm面InGaN薄膜のIn組成分布観察2013

    • Author(s)
      正直花奈子,花田貴,崔正焄,島田貴章,今井康彦,木村滋,谷川智之,片山竜二,松岡隆志
    • Organizer
      第74回応用物理学会学術講演会
    • Place of Presentation
      社大学田辺キャンパス
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Effect of indium surfactant on MOVPE growth of N-polar GaN2013

    • Author(s)
      T. Aisaka, T. Tanikawa, T. Kimura, T. Iwabuchi, K. Shojiki, R. Katayama, T. Hanada and T. Matsuoka
    • Organizer
      第32回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] サファイア基板上GaN薄膜の有機金属気相成長挙動の格子極性依存性2013

    • Author(s)
      吉野川伸雄,片山竜二(他5名、6番)
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川
    • Year and Date
      2013-03-28
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Observation of Phase Separation on m-plane InGaN Films with Micro-vicinal surface by Micro-beam XRD2013

    • Author(s)
      K. Shojiki, T. Hanada, J. H. Choi, Y. Imai, S. Kimura, T. Shimada, T. Tanikawa, R. Katayama and T. Matsuoka
    • Organizer
      第32回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Investigation and Suppression of Metastable-phase Inclusion in MOVPE-grown –c-plane InGaN/GaN Multiple Quantum Wells2013

    • Author(s)
      K. Shojiki, J. H. Choi, T. Iwabuchi1, N. Usami, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka
    • Organizer
      KINKEN-WAKATE 2013 10th Materials Science School for Young Scientists
    • Place of Presentation
      Sendai, Japan
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Nonlinear Optical Application of Periodic Polarity-inverted GaN Waveguide2013

    • Author(s)
      R. Katayama, N. Yoshinogawa, S. Kurokawa, T. Tanikawa, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe, and T. Matsuoka
    • Organizer
      2013 JSAP-MRS Joint Symposia
    • Place of Presentation
      Kyoto, Japan
    • Invited
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] 窒素δドープGaAs中の単一等電子トラップによる励起子分子発光の時間分解フォトルミネッセンス測定2013

    • Author(s)
      高宮健吾,八木修平,土方泰斗,望月敏光,吉田正裕,秋山英文,窪谷茂幸,片山竜二,尾鍋研太郎,矢口裕之
    • Organizer
      第74回応用物理学会学術講演会
    • Place of Presentation
      同志社大学田辺キャンパス
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] MOVPE成長N極性InGaNにおけるIn組成のc面サファイア基板微傾斜角依存性2013

    • Author(s)
      正直花奈,崔正焄,進藤裕文,木村健司,谷川智之,花田貴,片山竜二,松岡隆志
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Influence of Mg-Doping on the Surface Morphology of (000-1) GaN/Sapphire Grown by Metalorganic Vapor Phase Epitaxy2013

    • Author(s)
      T. Tanikawa, T. Aisaka, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka
    • Organizer
      10th Int. Conf. on Nitride Semicond. (ICNS-10)
    • Place of Presentation
      Washington DC, USA
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Evaluation and Solution of Metastable-Phase Inclusion in MOVPE-grown -c-plane InGaN/GaN Multiple Quantum Wells2013

    • Author(s)
      K. Shojiki, J. H. Choi, T. Iwabuchi, N. Usami, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama, T. Matsuoka
    • Organizer
      10th Int. Conf. on Nitride Semicond. (ICNS-10)
    • Place of Presentation
      Washington DC, USA
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Improvement of surface morphology in (000-1) GaN/Sapphire grown by MOVPE with indium surfactant2013

    • Author(s)
      T. Tanikawa, T. Aisaka, T. Kimura, T. Iwabuchi, K. Shojiki, R. Katayama, T. Hanada and T. Matsuoka
    • Organizer
      Conference on LED and its industrial application '13 (LEDIA '13)
    • Place of Presentation
      Yokohama, Japan
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Nonlinear Optical Application of Periodic Polarity-inverted GaN Waveguide2013

    • Author(s)
      R. Katayama(他8名)
    • Organizer
      2013 JSAP-MRS Joint Symposia
    • Place of Presentation
      Kyoto
    • Year and Date
      2013-09-18
    • Invited
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] サファイア基板上GaN薄膜のMOVPE成長挙動の格子極性依存性2013

    • Author(s)
      吉野川伸雄,岩渕拓也,正直花奈子,木村健司,谷川智之,片山竜二,松岡隆志
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Y立方晶AlNおよび高Al濃度立方晶AlGaNのRF-MBE成長2013

    • Author(s)
      角田雅弘,森川生,窪谷茂幸,片山竜二,矢口裕之,尾鍋研太郎
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学(神奈川)
    • Year and Date
      2013-03-28
    • Data Source
      KAKENHI-PROJECT-22360005
  • [Presentation] MOVPE成長–c面InGaN/GaN多重量子井戸構造における準安定相混在の抑制2013

    • Author(s)
      正直花奈子, 崔正焄, 岩渕拓也, 宇佐美徳隆, 谷川智之, 窪谷茂幸, 花田貴, 片山 竜二, 松岡 隆志
    • Organizer
      第68回応用物理学会東北支部学術講演会
    • Place of Presentation
      山形大学米沢キャンパス
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] The improvement of N-polar GaN surface during MOVPE growth with indium surfactant2013

    • Author(s)
      T. Aisaka, T. Tanikawa, T. Kimura, K. Shojiki, T. Iwabuchi, T. Hanada, R. Katayama, and T. Matsuoka
    • Organizer
      2013 JSAP-MRS Joint Symposia
    • Place of Presentation
      Kyoto, Japan
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] 窒化物半導体フォトニックナノ構造の量子光学応用2013

    • Author(s)
      片山竜二、黒川周斉、吉野川伸雄、谷川智之、福原裕次郎、窪谷茂幸、尾鍋研太郎、松岡隆志
    • Organizer
      第5回 窒化物半導体結晶成長講演会
    • Place of Presentation
      大阪大学吹田キャンパス
    • Invited
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Influence of Sapphire Substrate Miscut Angle on Indium Content of MOVPE-grown InGaN Films2012

    • Author(s)
      K. Shojiki, H. Shindo, S. Y. Ji, V. S. Kumar, J. H. Choi, Y. H. Liu, T. Hanada, R. Katayama, and T. Matsuoka
    • Organizer
      4th Intern. Symp.on Growth of III- nitrides (ISGN-4)
    • Place of Presentation
      St. Petersburg, Russia
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Enhancement of violet second harmonic generation in periodic polarity-inverted GaN waveguides2012

    • Author(s)
      R. Katayama, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe and T. Matsuoka
    • Organizer
      17th Int. Conf. Molecular Beam Epitaxy
    • Place of Presentation
      Nara, Japan
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] 窒素δドープGaAs中の単一等電子トラップからの発光のフォトルミネッセンス励起分光測定2012

    • Author(s)
      高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学(愛媛県)
    • Year and Date
      2012-09-12
    • Data Source
      KAKENHI-PROJECT-24360004
  • [Presentation] Comparison of crystalline quality in InGaN grown on (0001) and (0001) GaN/Sapphire by metal-organic vapor phase epitaxy2012

    • Author(s)
      T. Tanikawa, R. Katayama and T. Matsuoka
    • Organizer
      Int. Workshop on Nitride Semiconductors (IWN2012)
    • Place of Presentation
      Sapporo, Japan
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] マイクロファセットができたm面InGaN薄膜のIn濃度分布観察2012

    • Author(s)
      花田貴,崔正焄,正直花奈子,今井康彦,木村 滋,島田貴章,片山竜二,松岡隆志
    • Organizer
      プレIWN2012
    • Place of Presentation
      東京大学
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] 窒素δドープGaAsにおける単一等電子トラップからの励起子分子発光2012

    • Author(s)
      高宮健吾, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学(東京)
    • Year and Date
      2012-03-17
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] Violet-colored enhanced second harmonic generation from periodic polarity-inverted GaN waveguide2012

    • Author(s)
      R. Katayama(他8名)
    • Organizer
      The 31st Electron. Mater. Symp
    • Place of Presentation
      Shizuoka
    • Year and Date
      2012-07-13
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Optical properties of the periodic polarity-inverted GaN waveguides2012

    • Author(s)
      R. Katayama(他7名)
    • Organizer
      SPIE Photonics WEST 2012
    • Place of Presentation
      San Francisco, USA
    • Year and Date
      2012-01-23
    • Invited
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Enhanced second harmonic generation from periodic polarity-inverted GaN waveguide2012

    • Author(s)
      R. Katayama, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe, and T. Matsuoka
    • Organizer
      Int. Conf. on Superlattices, Nanostructures, and Nanodevices (ICSNN2012)
    • Place of Presentation
      Dresden, Germany
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Biexciton Emission from Single Isoelectronic Traps Formed by Nitrogen-Nitrogen Pairs in GaAs2012

    • Author(s)
      K. Takamiya, T. Fukushima. S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe. R. Katayama, and H. Yaguchi
    • Organizer
      31st International Conference on the Physics of Semiconductors
    • Place of Presentation
      スイス連邦工科大学チューリッヒ校(スイス)
    • Year and Date
      2012-08-02
    • Data Source
      KAKENHI-PROJECT-24360004
  • [Presentation] Linear and nonlinear optical investigations of periodic polarity- inverted GaN waveguides2012

    • Author(s)
      R. Katayama(他5名)
    • Organizer
      4th Intern. Symp. on Growth of III-nitrides
    • Place of Presentation
      St. Petersburg, Russia
    • Year and Date
      2012-07-19
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Growth of Cubic AlN Films on MgO substrates by MBE2012

    • Author(s)
      M. Kakuda, S. Morikawa, S. Kuboya,R. Katayama, H. Yaguchi, K. Onabe,
    • Organizer
      GCOE International Sympsium on Physical Sciences Frontier
    • Place of Presentation
      東京
    • Year and Date
      2012-12-09
    • Data Source
      KAKENHI-PROJECT-22360005
  • [Presentation] Enhancement of In-incorporation into InGaN by nitridation of sapphire substrate in MOVPE2012

    • Author(s)
      J. H. Choi, S. Kumar, K. Shojiki, T. Hanada, R. Katayama andT. Matsuoka
    • Organizer
      4th Intern. Symp.on Growth of III- nitrides (ISGN-4)
    • Place of Presentation
      St. Petersburg, Russia
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Enhancement of violet second harmonic generation in periodic polarity-inverted GaN waveguides2012

    • Author(s)
      R. Katayama(他5名)
    • Organizer
      Int. Conf. on Molecular Beam Epitaxy
    • Place of Presentation
      Nara
    • Year and Date
      2012-09-25
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation]2012

    • Author(s)
      角田雅弘,森川生,窪谷茂幸,片山竜二,尾鍋研太郎
    • Organizer
      第4回窒化物半導体結晶成長講演会
    • Place of Presentation
      東京大学(東京)
    • Year and Date
      2012-04-27
    • Data Source
      KAKENHI-PROJECT-22360005
  • [Presentation] Optical properties of the periodic polarity-inverted GaN waveguides2012

    • Author(s)
      Ryuji Katayama, Yujiro Fukuhara, Masahiro Kakuda, Shigeyuki Kuboya, Kentaro Onabe, Syusai Kurokawa, Naoto Fujii, Takashi Matsuoka
    • Organizer
      SPIE Photonics WEST 2012
    • Place of Presentation
      米国・サンフランシスコ(招待講演)
    • Year and Date
      2012-01-23
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] (0001)面、(000-1)面GaN上へMOVPE成長したInGaNの表面モフォロジーとIn取り込み2012

    • Author(s)
      谷川智之,正直花奈子,崔正焄,片山竜二,松岡隆志
    • Organizer
      第67回応用物理学会東北支部学術講演会
    • Place of Presentation
      東北大学
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Violet second harmonic generation from polarity inverted GaN waveguides2012

    • Author(s)
      R. Katayama(他8名)
    • Organizer
      Int. Workshop on Nitride Semiconductors
    • Place of Presentation
      Sapporo
    • Year and Date
      2012-10-18
    • Invited
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] 極性ワイドギャップ半導体フォトニックナノ構造の新規光機能2012

    • Author(s)
      片山竜二, 松岡隆志, 福原裕次郎, 角田雅弘, 窪谷茂幸, 尾鍋研太郎
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      東京・早稲田(招待講演)
    • Year and Date
      2012-03-15
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates2012

    • Author(s)
      R. G. Jin, S. Yagi, Y. Hijikata, S. Kuboya, K. Onabe, R. Katayama and H. Yaguchi
    • Organizer
      17th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      奈良県新公会堂(奈良県)
    • Year and Date
      2012-09-24
    • Data Source
      KAKENHI-PROJECT-24360004
  • [Presentation] Growth of cubic AlN films on MgO substrate via2-step cubic GaN buffer layer by RF-MBE2012

    • Author(s)
      M. Kakuda, S. Morikawa, S. Kuboya,R. Katayama, K. Onabe
    • Organizer
      31th Electronic Materials Symposium (EMS-31)
    • Place of Presentation
      伊豆(静岡)
    • Year and Date
      2012-07-11
    • Data Source
      KAKENHI-PROJECT-22360005
  • [Presentation] MBE法によるGaAs(001)基板上へのErGaAs混晶の成長2012

    • Author(s)
      金日国, 八木修平, 土方泰斗, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学(愛媛県)
    • Year and Date
      2012-09-12
    • Data Source
      KAKENHI-PROJECT-24360004
  • [Presentation] Linear and nonlinear optical investigations of periodic polarity- inverted GaN waveguides2012

    • Author(s)
      R. Katayama(他5名)
    • Organizer
      Int. Conf. on Superlattices, nanostructures, and Nanodevices
    • Place of Presentation
      Dresden, Germany
    • Year and Date
      2012-07-26
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] 極性ワイドギャップ半導体フォトニックナノ構造の新規光機能2012

    • Author(s)
      片山竜二(他5名)
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      東京
    • Year and Date
      2012-03-15
    • Invited
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] MOVPE成長(0001) GaNのステップフロー成長の促進2012

    • Author(s)
      逢坂崇,正直花奈子,岩渕拓也,木村健司,谷川智之,花田貴,片山竜二,松岡隆志
    • Organizer
      第67回応用物理学会東北支部学術講演会
    • Place of Presentation
      東北大学
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Linear and nonlinear optical investigations of periodic polarity-inverted GaN waveguides2012

    • Author(s)
      R. Katayama, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe, and T. Matsuoka
    • Organizer
      4th Intern. Symp.on Growth of III- nitrides (ISGN-4)
    • Place of Presentation
      St. Petersburg, Russia
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Violet-colored enhanced second harmonic generation from periodic polarity- inverted GaN waveguide2012

    • Author(s)
      R. Katayama, S. Kurokawa, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe, T. Tanikawa, T. Hanada and T.Matsuoka
    • Organizer
      The 31st Electronic Materials Symposium (EMS-31)
    • Place of Presentation
      Shuzenji, Japan
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] (0001)および(000-1)面GaN上へMOVPE成長したInGaNの結晶品質比較2012

    • Author(s)
      谷川智之,片山竜二,松岡隆志
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] サファイア基板上GaN薄膜の有機金属気相成長初期過程における表面モフォロジーの格子極性依存性2012

    • Author(s)
      吉野川伸雄,岩渕拓也,正直花奈子,木村健司,谷川智之,片山竜二,松岡隆志
    • Organizer
      第67回応用物理学会東北支部学術講演会
    • Place of Presentation
      東北大学
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] MOVPE成長N極性InGaNにおけるIn組成のc面サファイア基板微傾斜角依存性2012

    • Author(s)
      正直花奈子,崔正焄,進藤裕文,木村健司,谷川智之,花田貴,片山竜ニ,松岡隆志
    • Organizer
      第67回応用物理学会東北支部学術講演会
    • Place of Presentation
      東北大学
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Influence of sapphire substrate miscut angle on Indium content of MOVPE-grown InGaN films2012

    • Author(s)
      K. Shojiki, J. H. Choi, H. Shindo, S. Y. Ji, V. S. Kumar, Y. H. Liu, T. Hanada, R. Katayama and T. Matsuoka
    • Organizer
      The 31st Electronic Materials Symposium (EMS-31)
    • Place of Presentation
      Shuzenji, Japan
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Violet second harmonic generation from polarity inverted GaN waveguides2012

    • Author(s)
      R. Katayama, S. Kurokawa, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe, T. Tanikawa, T. Hanada and T. Matsuoka
    • Organizer
      Int. Workshop on Nitride Semiconductors (IWN2012)
    • Place of Presentation
      Sapporo, Japan
    • Invited
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Study of In-composition of InGaN islands on m-plane GaN substrate using high-resolution microbeam XRD2012

    • Author(s)
      J.H. Choi, K. Shojiki, T. Shimada, T. Tanikawa, T. Hanada, R. Katayama, T. Matsuoka, Y. Imai and S. Kimura
    • Organizer
      Int. Workshop on Nitride Semiconductors (IWN2012)
    • Place of Presentation
      Sapporo, Japan
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] RF-MBEGrowth of cubic AlN on MgO(001) substrates via 2-step c-GaN buffer layer2012

    • Author(s)
      M. Kakuda, S. Morikawa, S. Kuboya, R. Katayama, K. Onabe
    • Organizer
      17th International Conference on Molecular Beam Epitaxy (MBE2012)
    • Place of Presentation
      奈良(奈良)
    • Year and Date
      2012-09-24
    • Data Source
      KAKENHI-PROJECT-22360005
  • [Presentation] Biexciton Emission from Single Is oelectronic Traps in Nitrogen Atomic-Layey-Doped GaAs2011

    • Author(s)
      K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, H. Yaguchi
    • Organizer
      The 3rd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    • Place of Presentation
      International Academy Traunkirchen (Traunkirchen, Austria)
    • Year and Date
      2011-09-12
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] Cubic III-nitrides: potential photonic materials (Invited)2011

    • Author(s)
      K. Onabe, S.Sanorpim, H. Kato, M.Kakuda, T. Nakamura, K. Nakamura, S.Kuboya, R. Katayama
    • Organizer
      SPIE Photonic West 2011
    • Place of Presentation
      San Francisco, CA,USA.
    • Year and Date
      2011-01-24
    • Data Source
      KAKENHI-PROJECT-22360005
  • [Presentation] Cubic III-nitrides : potential photonic materials2011

    • Author(s)
      K.Onabe, S.Sanorpim, H.Kato, M.Kakuda, T.Nakamura, K.Nakamura, S.Kuboya, R.Katayama
    • Organizer
      SPIE Photonic West 2011
    • Place of Presentation
      San Francisco, CA, USA(Invited)
    • Year and Date
      2011-01-24
    • Data Source
      KAKENHI-PROJECT-22360005
  • [Presentation] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2011

    • Author(s)
      K.Takamiya, Y.Endo, T.Fukushima, S.Yagi, Y.Hijikata, T.Mochizuki, M.Yoshita, H.Akiyama, S.Kuboya, K.Onabe, R.Katayama, H.Yaguchi
    • Organizer
      7th International Conference on Processing & Manufacturing of Advanced Materials
    • Place of Presentation
      Quebec City Convention Centre (Quebec, Canada)(招待講演)
    • Year and Date
      2011-08-03
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] GaAs(110)基板上に作製した窒素δドープGaAsにおける等電子トラップからの発光特性評価2011

    • Author(s)
      高宮健吾, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(神奈川県)
    • Year and Date
      2011-03-25
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2011

    • Author(s)
      K. Takamiya, Y. Endo, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, H.Yaguchi
    • Organizer
      The 7th International Conference on Processing & Manufacturing of Advanced Materials
    • Place of Presentation
      Quebec City Convention Centre (Quebec,Canada)
    • Year and Date
      2011-08-03
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] 窒素δドープGaAs(110)中の単一等電子トラップからの発光の偏光特性2011

    • Author(s)
      高宮健吾, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学(山形県)
    • Year and Date
      2011-08-30
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] Biexciton Emission from Single Isoelectronic Traps in Nitrogen Atomic-Layey-Doped GaAs2011

    • Author(s)
      K.Takamiya, T.Fukushima, S.Yagi, Y.Hijikata, T.Mochizuki, M.Yoshita, H.Akiyama, S.Kuboya, K.Onabe, R.Katayama, H.Yaguchi
    • Organizer
      3rd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    • Place of Presentation
      International Academy Traunkirchen (Traunkirchen, Austria)
    • Year and Date
      2011-09-12
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] 窒素δドープGaAs/AlGaAsヘテロ構造における等電子トラップからの発光特性評価2010

    • Author(s)
      高宮健吾, 遠藤雄太, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, サノーピンサクンタム, 矢口裕之
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎県)
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] 極低窒素濃度GaAsNのフォトリフレクタンススペクトル2010

    • Author(s)
      大久保航, 石川輝, 八木修平, 土方泰斗, 吉田貞史, 片山竜二, 尾鍋研太郎, 矢口裕之
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎県)
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] 様々な面方位基板上に作製した窒素δドープGaAs中の等電子トラップからの発光(III)2010

    • Author(s)
      福島俊之, 高宮健吾, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学(神奈川県)
    • Year and Date
      2010-03-18
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] 極低窒素濃度GaAsN中の等電子トラップからの発光に対する一軸応力の影響2010

    • Author(s)
      新井佑也, 遠藤雄太, 八木修平, 土方泰斗, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎)
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] 極低窒素濃度GaAsN中の等電子トラップからの発光に対する一軸応力の影響2010

    • Author(s)
      新井佑也, 遠藤雄太, 八木修平, 土方泰斗, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎県)
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] 窒素δドープGaAs/AlGaAsヘテロ構造における等電子トラップからの発光特性評価2010

    • Author(s)
      高宮健吾, 遠藤雄太, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, サノーピンサクンタム, 矢口裕之, サノーピンサクンタム, 矢口裕之
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎)
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] RF-MBE法によるYSZ(001)基板上立方晶InN及びInGaNの結晶成長2010

    • Author(s)
      中村桂土, 角田雅弘, 石田崇, 窪谷茂幸, 片山竜二, 尾鍋研太郎
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学 (神奈川)
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] RF-MBE法によるYSZ(001)基板上立方晶InN及びInGaNの結晶成長2010

    • Author(s)
      中村桂土、角田雅弘、石田崇、窪谷茂幸、片山竜二、尾鍋研太郎
    • Organizer
      2010年春季第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] 窒素δドープGaAs中の等電子トラップを形成する窒素原子対配列に関する研究2010

    • Author(s)
      星野真也, 遠藤雄太, 福島俊之, 高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎県)
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] 極低窒素濃度GaAsNにおける窒素ペアからの発光の窒素濃度依存性2010

    • Author(s)
      石川輝, 八木修平, 土方泰斗, 吉田貞史, 岡野真人, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎県)
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] Photoluminescence from single is oelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A2009

    • Author(s)
      T. Fukushima, M. Ito, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Okano, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe
    • Organizer
      The 14th International Conference on Modulated Semiconductor Structures
    • Place of Presentation
      神戸国際会議場 (兵庫県)
    • Year and Date
      2009-07-21
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] MOVPE growth of InN films by separate supply of TMIn and DMHy2009

    • Author(s)
      Q.T.Thieu, T.Nakagawa, Y.Seki, S.Kuboya, R.Katayama, K.Onabe
    • Organizer
      28th Electronic Materials Symposium(EMS28)
    • Place of Presentation
      Biwako, Japan
    • Year and Date
      2009-07-08
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] 窒素δドープGaAs/AlGaAsヘテロ構造における等電子トラップからの発光2009

    • Author(s)
      高宮健吾, 遠藤雄太, 福島俊之, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山県・富山大学
    • Year and Date
      2009-09-09
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] MOVPE Growth of High Optical Quality InGaPN Layers on GaAs(001)Substrates2009

    • Author(s)
      D.Kaewket, S.Sanorpim, S.Tungasmita, R.Katayama, K.Onabe
    • Organizer
      8th International Conference on Nitride Semiconductors(ICNS-8)
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2009-10-22
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] 様々な面方位基板上に作製した窒素δドープGaAs中の等電子トラップからの発光(III)2009

    • Author(s)
      福島俊之, 高宮健吾, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山県・富山大学
    • Year and Date
      2009-09-09
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] Photoluminescence from single isoelectronic traps in nitrogen delta-dopedGaAs grown on GaAs(111)A2009

    • Author(s)
      福島俊之, M.Ito, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, S.Kuboys, 片山竜二, 尾鍋研太郎
    • Organizer
      The 14th International Conference on Modulated Semiconductor Structures
    • Place of Presentation
      兵庫県・神戸国際会議場
    • Year and Date
      2009-07-21
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] InP(001)基板上へのInPN薄膜のMOVPE成長2009

    • Author(s)
      関裕紀, 窪谷茂幸, ティユクァントゥ, 片山竜二, 矢口裕之, 尾鍋研太郎
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学 (茨城)
    • Year and Date
      2009-03-31
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] MOVPE growth of InN films by separate supply of TMIn and DMHy2009

    • Author(s)
      ティユクァントウ、中川隆、関裕紀、窪谷茂幸、片山竜二、尾鍋研太郎
    • Organizer
      28th Electronic Materials Symposium(EMS28)
    • Place of Presentation
      Biwako, Japan
    • Year and Date
      2009-07-08
    • Data Source
      KAKENHI-PUBLICLY-21016003
  • [Presentation] 極低窒素濃度GaAsNのフォトルミネッセンス励起分光測定2009

    • Author(s)
      石川輝, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学(富山県)
    • Year and Date
      2009-09-09
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] Movpe Growth and Optical Characterization of InGaAsN T-shaped Quantum Wires Lattice-Matched to GaAs2009

    • Author(s)
      P.Klangtakail, S.Sanorpim, R.Katayama, K.Onabe
    • Organizer
      8th International Conference on Nitride Semiconductors(ICNS-8)
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2009-10-20
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] ジメチルヒドラジンを窒素原料としたInNのMOVPE成長(3)2009

    • Author(s)
      ティユクァントウ、中川隆、関裕紀、窪谷茂幸、片山竜二、尾鍋研太郎
    • Organizer
      2009年秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] 極低窒素濃度GaAsNのフォトルミネッセンス励起分光測定2009

    • Author(s)
      石川輝, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山県・富山大学
    • Year and Date
      2009-09-09
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] MOVPE growth of InN films by separate supply of TMIn and DMHy2009

    • Author(s)
      ティユクァントウ、中川隆、関裕紀、窪谷茂幸、片山竜二、尾鍋研太郎
    • Organizer
      8th International Conference on Nitride Semiconductors(ICNS-8)
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2009-10-20
    • Data Source
      KAKENHI-PUBLICLY-21016003
  • [Presentation] MOVPE growth of InN films by separate supply of TMIn and DMHy2009

    • Author(s)
      Q.T.Thieu, T.Nakagawa, Y.Seki, S.Kuboya, R.Katayama, K.Onabe
    • Organizer
      8th International Conference on Nitride Semiconductors(ICNS-8)
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2009-10-20
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] Movpe Growth and Optical Characterization of InGaAsN T-shaped Quantum Wires Lattice-Matched to GaAs2009

    • Author(s)
      P. Klangtakai, S. Sanorpim, R. Katayama, K. Onabe
    • Organizer
      8th International Conference on Nitride Semiconductors (ICNS-8)
    • Place of Presentation
      Jeju, Korea.
    • Year and Date
      2009-10-20
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] InP(001)板上へのInPN薄膜のMOVPE成長2009

    • Author(s)
      関裕紀,窪谷茂幸,ティユクァントゥ,片山竜二,矢口裕之,尾鍋研太郎
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-03-31
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] ジメチルヒドラジンを窒素原料としたInNのMOVPE成長 (3)2009

    • Author(s)
      テイユクァントウ, 中川隆, 関裕紀, 窪谷茂幸, 片山竜二, 尾鍋研太郎
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学 (富山)
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] MOVPE growth of InN films by separate supply of TMIn and DMHy2009

    • Author(s)
      Q. T. Thieu, T. Nakagawa, Y. Seki, S. Kuboya, R. Katayama, K. Onabe
    • Organizer
      8th International Conference on Nitride Semiconductors (ICNS-8)
    • Place of Presentation
      Jeju, Korea.
    • Year and Date
      2009-10-20
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] MOVPE Growth of InN Films Using 1,1-dimethylhydrazine as a Nitrogen Precursor(Invited)2009

    • Author(s)
      ティユクァントウ、中川隆、関裕紀、窪谷茂幸、片山竜二、尾鍋研太郎
    • Organizer
      Asia-Pacific Workshop on Widegap Semiconductors(APWS2009)
    • Place of Presentation
      Zhang Jia Jie, Hunan, China
    • Year and Date
      2009-05-25
    • Data Source
      KAKENHI-PUBLICLY-21016003
  • [Presentation] MOVPE Growth of High Optical Quality InGaPN Layers on GaAs (001) Substrates2009

    • Author(s)
      D. Kaewket, S. Sanorpim, S. Tungasmita, R. Katayama, K. Onabe
    • Organizer
      8th International Conference on Nitride Semiconductors (ICNS-8)
    • Place of Presentation
      Jeju, Korea.
    • Year and Date
      2009-10-22
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] MOVPE growth of InN films by separate supply of TMIn and DMHy2009

    • Author(s)
      Q. T. Thieu, T. Nakagawa, Y. Seki, S. Kuboya, R. Katayama, K. Onabe
    • Organizer
      28th Electronic Materials Symposium (EMS28)
    • Place of Presentation
      Biwako, Japan.
    • Year and Date
      2009-07-08
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] ジメチルヒドラジンを窒素原料としたInNのMOVPE成長(3)2009

    • Author(s)
      ティユクァントウ、中川隆、関裕紀、窪谷茂幸、片山竜二、尾鍋研太郎
    • Organizer
      2009年秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PUBLICLY-21016003
  • [Presentation] ジメチルヒドラジンを窒素原料としたInNのMOVPE成長(2)2008

    • Author(s)
      ティュクァントウ、関裕紀、窪谷茂幸、片山竜二、尾鍋研太郎
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部工業大学
    • Year and Date
      2008-09-03
    • Data Source
      KAKENHI-PROJECT-19032002
  • [Presentation] InAsN薄膜の光学的特性2008

    • Author(s)
      窪谷茂幸,黒田正行,西尾晋,ティユクァントゥ,片山竜二,尾鍋研太郎
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部工業大学
    • Year and Date
      2008-09-03
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] ラマン分光を用いたGaInAsN混晶の発光効率の変化に関する研究2008

    • Author(s)
      谷岡健太郎, 堀口歩, 土方泰斗, 矢口裕之, 吉田貞史, 片山竜二, 尾鍋研太郎, 吉田正裕, 秋山英文
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学 (千葉)
    • Year and Date
      2008-03-29
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] MOVPE growth properties of high quality InAsN films2008

    • Author(s)
      S. Kuboya, Q. T. Thieu, H. Kato, F. Nakajima, R. Katayama, K. Onabe
    • Organizer
      14th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIV)
    • Place of Presentation
      Metz, France
    • Year and Date
      2008-06-04
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] MOVPE growth of InN films avoiding parasitic reactions of precursors, trimethylindium and 1, 1-dimethylhydrazine2008

    • Author(s)
      Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
    • Organizer
      International Workshop on Nitiride Semiconductors (IWN 2008)
    • Place of Presentation
      Montreux, Switzerland
    • Year and Date
      2008-10-06
    • Data Source
      KAKENHI-PROJECT-19032002
  • [Presentation] MOVPE growth of InN films using 1,1-dimethylhydrazine as the nitrogen source2008

    • Author(s)
      Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
    • Organizer
      14th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIV)
    • Place of Presentation
      Metz, France
    • Year and Date
      2008-06-03
    • Data Source
      KAKENHI-PROJECT-19032002
  • [Presentation] MOVPE growth of InN films using 1,1-dimethylhydrazine as a nitrogen precursor2008

    • Author(s)
      Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
    • Organizer
      Second International Symposium on Growth of III-Nitrides
    • Place of Presentation
      修善寺(静岡)
    • Year and Date
      2008-07-07
    • Data Source
      KAKENHI-PROJECT-19032002
  • [Presentation] MOVPE Growth of InN films Using 1, 1-Dimethylhydrazine as a Nitrogen Precursor2008

    • Author(s)
      Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
    • Organizer
      2nd International Symposium on Growth of HI-Nitride (ISGN-2)
    • Place of Presentation
      Shuzenji, Japan
    • Year and Date
      2008-07-07
    • Data Source
      KAKENHI-PROJECT-19032002
  • [Presentation] GaAsN及びInAsN薄膜の水素・窒素混合キャリアガスを用いたMOVPE成長2008

    • Author(s)
      窪谷茂幸, 加藤宏盟, ティユクァントゥ, 片山竜二, 尾鍋研太郎
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学 (千葉)
    • Year and Date
      2008-03-29
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] MOVPE growth of GaAsN and InAsN films by using N_2 carrier gas2008

    • Author(s)
      S. Kuboya, H. Kato, Q. T. Thieu, R. Katayama, K. Onabe
    • Organizer
      27th Electronic Materials Symposium (EMS-27)
    • Place of Presentation
      修善寺(静岡)
    • Year and Date
      2008-07-10
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] MOVPE growth properties of high quahty InAsN films2008

    • Author(s)
      S. Kuboya, Q. T. Thieu, H. Kato, F. Nakajhna, R. Katayama, K. Onabe
    • Organizer
      14th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE・XIV)
    • Place of Presentation
      Metz, France
    • Year and Date
      2008-06-04
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] ラマン分光を用いたGaInAsN混晶の発光効率の変化に関する研究2008

    • Author(s)
      谷岡健太郎, 堀口歩, 土方泰斗, 矢口裕之, 吉田貞史, 片山竜二, 尾鍋研太郎, 吉田正裕, 秋山英文
    • Organizer
      2008年春季 第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学(千葉)
    • Year and Date
      2008-03-29
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] Composition pulling effect in MOVPE growth of InGaAsN films on bulk InGaAs substrate2008

    • Author(s)
      S. Sanorpim, R. Katayama, S. Kuboya, K. Onabe
    • Organizer
      14th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE・XIV)
    • Place of Presentation
      Metz, France
    • Year and Date
      2008-06-04
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] InAsN薄膜の光学的特性2008

    • Author(s)
      窪谷茂幸, 黒田正行, 西尾晋, ティユクァントゥ, 片山竜二, 尾鍋研太郎
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部工業大学 (愛知)
    • Year and Date
      2008-09-03
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] MOVPE growth of GaAsN and InAsN films by using N2 carrier gas2008

    • Author(s)
      S. Kuboya, H. Kato, Q. T. Thieu, R. Katayama and K. Onabe
    • Organizer
      28th Electronic Materials Symposium (EMS28)
    • Place of Presentation
      Shuzenji, Japan
    • Year and Date
      2008-07-10
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] MOVPE growth of InN films using TMIn and DMHy as the precursors2008

    • Author(s)
      Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
    • Organizer
      27th Electronic Materials Symposium (EMS-27)
    • Place of Presentation
      修善寺(静岡)
    • Year and Date
      2008-07-10
    • Data Source
      KAKENHI-PROJECT-19032002
  • [Presentation] MOVPE growth of InN films using 1, 1-dimethylhydrazine as the nitrogen source2008

    • Author(s)
      Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
    • Organizer
      14th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIV)
    • Place of Presentation
      Metz, France
    • Year and Date
      2008-06-03
    • Data Source
      KAKENHI-PROJECT-19032002
  • [Presentation] Compositional pulling effect in MOVPE growth of InGaAsN films on bulk InGaAs substrate2008

    • Author(s)
      S. Sanorpim, R. Katayama, S. Kuboya, K. Onabe
    • Organizer
      14th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIV)
    • Place of Presentation
      Metz, France
    • Year and Date
      2008-06-04
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] InAsN quantum dots grown by MOVPE2008

    • Author(s)
      S. Kuboya, Q. T. Thieu, S. Takahashi, F. Nakajima, R. Katayama, K. Onabe
    • Organizer
      Workshop on Frontier Optoelectronic Materials and Devices
    • Place of Presentation
      箱根(神奈川)
    • Year and Date
      2008-03-05
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] MOVPE growth of InN films using TMIn and DMHy as the precursors2008

    • Author(s)
      Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
    • Organizer
      28th Electronic Materials Symposium (EMS28)
    • Place of Presentation
      Shuzenji, Japan
    • Year and Date
      2008-07-10
    • Data Source
      KAKENHI-PROJECT-19032002
  • [Presentation] ジメチルヒドラジンを窒素原料としたInNのMOVPE成長2008

    • Author(s)
      ティユ クァン トウ、関 裕紀、窪谷 茂幸、片山 竜二、尾鍋 研太郎
    • Organizer
      2008年春季 第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学(千葉)
    • Year and Date
      2008-03-27
    • Data Source
      KAKENHI-PROJECT-19032002
  • [Presentation] MOVPE growth properties of high quality InAsN films2008

    • Author(s)
      S. Kuboya, Q. T. Thieu, H. Kato, F. Nakajima, R. Katayama, K. Onabe
    • Organizer
      14th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIV)
    • Place of Presentation
      Metz, France.
    • Year and Date
      2008-06-04
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] 光照射によるGaInAsN混晶の発光効率向上に関する研究2007

    • Author(s)
      谷岡健太郎, 遠藤雄太, 伊藤正俊, 土方泰斗, 矢口裕之, 吉田貞史, 片山竜二, 尾鍋研太郎, 吉田正裕, 秋山英文
    • Organizer
      2007年秋季第68回応用物理学学術講演会
    • Place of Presentation
      北海道工業大学 (北海道)
    • Year and Date
      2007-09-07
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] MOVPE growth and photoluminescence properties of InAsN quantum dots2007

    • Author(s)
      S. Kuboya, S. Takahashi, Q. T. Thieu, F. Nakajima, R. Katayama, K. Onabe
    • Organizer
      7th International Conference on Nitride Semiconductors (ICNS-7)
    • Place of Presentation
      Las Vegas, USA
    • Year and Date
      2007-09-19
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] Photoluminescence properties of InAsN QDs grown by MOVPE2007

    • Author(s)
      S. Kuboya, Q. T. Thieu, S. Takahashi, F. Nakajima, R. Katayama, K. Onabe
    • Organizer
      26th Electronic Materials Symposium (EMS-26)
    • Place of Presentation
      琵琶湖(滋賀)
    • Year and Date
      2007-07-04
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] Photoluminescence properties of InAsN QDs grown by MOVPE2007

    • Author(s)
      S. Kuboya, Q. T. Thieu, S. Takahashi, F. Nakajima, R. Katayama, K. Onabe
    • Organizer
      26th Electronic Materials Symposium (EMS-26)
    • Place of Presentation
      琵琶湖 (滋賀)
    • Year and Date
      2007-07-04
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] MOVPE growth and photoluminescence properties of InAsN quantum dots2007

    • Author(s)
      S. Kuboya, S. Takahashi, Q. T. Thieu, F. Nakajima, R. Katayama, K. Onabe
    • Organizer
      7th International Conference on Nitride Semiconductors (ICNS-7)
    • Place of Presentation
      Las Vegas, USA.
    • Year and Date
      2007-09-19
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] 光照射によるGaInAsN混晶の発光効率向上に関する研究2007

    • Author(s)
      谷岡健太郎, 遠藤雄太, 伊藤正俊, 土方泰斗, 矢口裕之, 吉田貞史, 片山竜二, 尾鍋研太郎, 吉田正裕, 秋山英文
    • Organizer
      2007年秋季 第68回応用物理学学術講演会
    • Place of Presentation
      北海道工業大学(北海道)
    • Year and Date
      2007-09-07
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] 窒素δドープGaAs中の単一等電子トラップによる励起子分子発光の時間分解フォトルミネッセンス測定

    • Author(s)
      高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学(京都府)
    • Data Source
      KAKENHI-PROJECT-24360004
  • [Presentation] RF-MBE Growth of cubic AlN on MgO(001) substrates via 2-step c-GaN buffer layer

    • Author(s)
      M. Kakuda, S. Morikawa, S. Kuboya, R. Katayama, K. Onabe
    • Organizer
      17th International Conference on Molecular Beam Epitaxy (MBE2012)
    • Place of Presentation
      Nara, Japan
    • Data Source
      KAKENHI-PROJECT-22360005
  • [Presentation] 横型擬似位相整合AlN導波路を用いた深紫外第二高調波発生素子の設計

    • Author(s)
      三谷悠貴, 片山竜二, 劉陳燁, 正直花奈子, 谷川智之, 窪谷茂幸, 松岡隆志
    • Organizer
      日本結晶成長学会ナノ構造・エピタキシャル成長分科会 第7回窒化物半導体結晶成長講演会
    • Place of Presentation
      東北大学片平さくらホール(宮城県仙台市)
    • Year and Date
      2015-05-07 – 2015-05-08
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] Growth of cubic AlN films on MgO substrate via 2-step cubic GaN buffer layer by RF-MBE

    • Author(s)
      M. Kakuda, S. Morikawa, S. Kuboya, R. Katayama, K. Onabe
    • Organizer
      31th Electronic Materials Symposium (EMS-31)
    • Place of Presentation
      Izu, Japan
    • Data Source
      KAKENHI-PROJECT-22360005
  • [Presentation] Accurate Determination of Modal Dispersion in Nonlinear Optical TiOx/GaN Waveguide by Spectroscopic m-line Technique

    • Author(s)
      R. Katayama, N. Yoshinogawa, K. Shojiki, T. Tanikawa, S. Kuboya and T. Matsuoka
    • Organizer
      International Workshop on Nitride Semiconductors (IWN2014)
    • Place of Presentation
      Wrocław Congress Center, Wroclaw, Poland
    • Year and Date
      2014-08-24 – 2014-08-29
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] RF-MBE法による立方晶AlNの結晶成長

    • Author(s)
      角田雅弘、森川生、窪谷茂幸、片山竜二、尾鍋研太郎
    • Organizer
      第4回窒化物半導体結晶成長講演会
    • Place of Presentation
      東京大学(東京都目黒区)
    • Data Source
      KAKENHI-PROJECT-22360005
  • [Presentation] Polarity control of MOVPE-grown GaN on AlN/GaN templates

    • Author(s)
      J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama and T. Matsuoka
    • Organizer
      日本結晶成長学会ナノ構造・エピタキシャル成長分科会 第7回窒化物半導体結晶成長講演会
    • Place of Presentation
      東北大学片平さくらホール(宮城県仙台市)
    • Year and Date
      2015-05-07 – 2015-05-08
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] 立方晶AlNおよび高Al濃度立方晶AlGaNのRF-MBE成長

    • Author(s)
      角田雅弘、森川生、窪谷茂幸、片山竜二、矢口裕之、尾鍋研太郎
    • Organizer
      2013年第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学(厚木市)
    • Data Source
      KAKENHI-PROJECT-22360005
  • [Presentation] MOVPE Growth of GaN onto PLD-Grown AlN Interlayer on GaN Templates

    • Author(s)
      J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama and T. Matsuoka
    • Organizer
      The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA ’15)
    • Place of Presentation
      Pacifico Yokohama, Kanagawa, Japan
    • Year and Date
      2015-04-22 – 2015-04-23
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] Design of the Transverse Quasi-Phase Matched AlN Waveguides for Deep-UV Second Harmonic Generation

    • Author(s)
      Y. Mitani, R. Katayama, J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya and T. Matsuoka
    • Organizer
      The 34th Electronic Materials Symposium
    • Place of Presentation
      La-Foret Biwako, Shiga, Japan
    • Year and Date
      2015-07-15 – 2015-07-17
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] Investigation of Modal Dispersion in Nonlinear Optical TiOx/GaN Waveguide by m-line Spectroscopy

    • Author(s)
      N. Yoshinogawa, R. Katayama, K. Shojiki, T. Tanikawa, S. Kuboya and T. Matsuoka
    • Organizer
      The 33rd Electronic Materials Symposium
    • Place of Presentation
      La-Foret Shuzenji, Shizuoka, Japan
    • Year and Date
      2014-07-09 – 2014-07-11
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] Growth of Cubic AlN Films on MgO substrates by MBE

    • Author(s)
      M. Kakuda, S. Morikawa, S. Kuboya, R. Katayama, H. Yaguchi, K. Onabe
    • Organizer
      GCOE International Sympsium on Physical Sciences Frontier
    • Place of Presentation
      Tokyo, Japan
    • Data Source
      KAKENHI-PROJECT-22360005
  • [Presentation] Excitation power dependence of the emission from various N-N pairs in N δ-doped GaAs

    • Author(s)
      K. Takamiya, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe, and H. Yaguchi
    • Organizer
      4th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    • Place of Presentation
      UCLAコンファレンス・センター(アメリカ合衆国)
    • Data Source
      KAKENHI-PROJECT-24360004
  • 1.  ONABE Kentaro (50204227)
    # of Collaborated Projects: 8 results
    # of Collaborated Products: 110 results
  • 2.  YAGUCHI Hiroyuki (50239737)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 44 results
  • 3.  Uemukai Masahiro (80362672)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 140 results
  • 4.  KUBOYA Shigeyuki (70583615)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 60 results
  • 5.  谷川 智之 (90633537)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 29 results
  • 6.  HIJIKATA Yasuto (70322021)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 32 results
  • 7.  YAGI Shuhei (30421415)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 22 results
  • 8.  AKIYAMA Hidefumi (40251491)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 28 results
  • 9.  KOH Shinji (50323663)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 10.  SHIRAKI Yasuhiro (00206286)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 11.  呉 軍 (80313005)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 12.  YAMAMOTO Takahisa (20220478)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 2 results
  • 13.  横山 弘之 (60344727)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 14.  宇佐美 徳隆 (20262107)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 15.  岩谷 素顕 (40367735)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 7 results
  • 16.  宮嶋 孝夫 (50734836)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 17.  川原村 敏幸 (00512021)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 18.  SAKUNTAM Sanorpim
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 19.  寒川 誠二
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 20.  村山 明宏
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results
  • 21.  三宅 秀人
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results

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