AO Jin-ping 敖金平

… Alternative Names

敖金平アオジンピン

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Researcher Number	40380109
Other IDs
Affiliation (based on the past Project Information) *help	2022: 徳島大学, 大学院社会産業理工学研究部(理工学域), 准教授 2018: 徳島大学, 大学院社会産業理工学研究部(理工学域), 准教授 2012: 徳島大学, ソシオテクノサイエンス研究部, 准教授 2010 – 2012: 徳島大学, 大学院・ソシオテクノサイエンス研究部, 准教授 2007: The University of Tokushima, Institute of Technology and Science, Associate Professor 2006: 徳島大学, 大学院ソシオテクノサイエンス研究部, 講師
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment Except Principal Investigator Basic Section 55050:Anesthesiology-related
Keywords	Principal Investigator GaN HFET / AlGaN / 高温動作 / Schottky contact / self-align gate / high-temperature operation / heat-resistant gate / refractory metal / ショットキー接触 / セルフアライゲート … More / 耐熱ゲート / 高融点金属 / 耐環境電極 / 細胞培養 / 耐環境 / AlGaN/GaNヘテロ構造 / AlGaN/GaN HFET / ｐHセンサ / 耐熱電極 / GaN MOSFET / AlGaN/GaN へテロ構造 / 窒化ガリウム / pHセンサ … More Except Principal Investigator マイクロ波送電 / オープンリング共振器 / 在宅医療 / 遠隔地・僻地医療 / 生体情報モニタリング / 医療機器 / 半導体 / 窒化ガリウム / 無線電力伝送 / ワイヤレス給電 Less

Efforts to implement wireless charging for medical devices.
- Principal Investigator
  
  FUJIWARA Shigeki
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 55050:Anesthesiology-related
- Research Institution
  The University of Tokushima
Development of GaN pH sensor for the surveillance of cell culturePrincipal Investigator
- Principal Investigator
  
  AO Jin-ping
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  The University of Tokushima
Investigation of Refractory Metal Gate on AlGaN/GaN HFETPrincipal Investigator
- Principal Investigator
  
  AO Jin-ping
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  The University of Tokushima

All 2013 2012 2011 2010 2008 2007

All Journal Article Presentation Book

[Book] Schottky Diodes: Properties, Preparation and Applications2008
- Author(s)
  Jin-Ping Ao 等
- Publisher
  Nova Science Publishers, Inc.(印刷中)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560337
[Journal Article] Thermally stable TiN Schottky contact on AlGaN/GaN heterostructure2013
- Author(s)
  Jin-Ping Ao, Yoshiki Naoi, Yasuo Ohno
- Journal Title
  
  Vacuum
  
  Volume: vol. 87, No. 1 Pages: 150-154
- DOI
  10.1016/j.vacuum.2012.02.038
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560332
[Journal Article] Influence of Dry Recess Process on Enhancement-Mode GaN Metal-Oxide-Semiconductor Field-Effect Transistors2013
- Author(s)
  Qingpeng Wang, Kentaro Tamai, Takahiro Miyashita, Shin-ichi Motoyama, Dejun Wang, Jin-Ping Ao, and Yasuo Ohno
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: vol. 52, No.1 Issue: 1S Pages: 1-5
- DOI
  10.7567/jjap.52.01ag02
- NAID
  210000141781
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560332
[Journal Article] Design Fabrication and Characterization of GaN MOSFET (in Chinese)2012
- Author(s)
  王青鵬, 江〓, 敖金平, 王徳君
- Journal Title
  
  Power Electronics
  
  Volume: vol. 46, No. 12 Pages: 81-83
- URL
  http://www.dldzjs.com/
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560332
[Journal Article] GaN MOSFET with a gate SiO_2 insulator deposited by silane-based plasma-enhanced chemical vapor deposition2011
- Author(s)
  Jin-Ping Ao, et al
- Journal Title
  
  Phys.Status Solidi C
  
  Volume: 8 Pages: 457-460
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560332
[Journal Article] GaN MOSFET with a gate SiO2insulator deposited by silane-basedplasma-enhanced chemical vapor deposition2011
- Author(s)
  Jin-Ping Ao, Katsutoshi Nakatani, Yuji Sogawa, Shiro Akamatsu, Young Hyun Kim, Takahiro Miyashita, Shin-ichi Motoyama, and Yasuo Ohno
- Journal Title
  
  Phys. Status Solidi C
  
  Volume: vol. 8, No. 2 Issue: 2 Pages: 457-460
- DOI
  10.1002/pssc.201000489
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560332
[Journal Article] Schottky Diodes : Properties, Preparation and Applications2008
- Author(s)
  Jin-Ping, Ao, Yasuo, Ohno, et. al.
- Journal Title
  
  Nova Science Publishers, Inc
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560337
[Presentation] Synthesis and Application of Metal Nitrides as Schottky Electrodes for Gallium Nitride Electron Devices2012
- Author(s)
  Jin-Ping Ao
- Organizer
  the first international conference on emerging advanced nanomaterials
- Place of Presentation
  Mercure Hotel, Brisbane(Ａｕｓｔｒaｌｉａ）
- Invited
- Data Source
  KAKENHI-PROJECT-22560332
[Presentation] Synthesis and Application of Metal Nitrides as Schottky Electrodes for Gallium Nitride Electron Devices2012
- Author(s)
  Jin-Ping Ao
- Organizer
  the first international conference on emerging advanced nanomaterials
- Place of Presentation
  Mercure Hotel, Brisbane (Australia)
- Year and Date
  2012-10-22
- Data Source
  KAKENHI-PROJECT-22560332
[Presentation] Thermally Stable TiN Schottky Contact on AlGaN/GaN Heterostructure2011
- Author(s)
  Jin-Ping Ao, et al
- Organizer
  The 11th International Symposium on Sputtering & Plasma Processes
- Place of Presentation
  京都リサーチパーク(京都府)
- Year and Date
  2011-07-08
- Data Source
  KAKENHI-PROJECT-22560332
[Presentation] Thermally Stable TiN Schottky Contact on AlGaN/GaN Heterostructure2011
- Author(s)
  Jin-Ping Ao
- Organizer
  The 11thInternational Symposium on Sputtering and Plasma Processes
- Place of Presentation
  京都リサーチパーク(京都府)
- Year and Date
  2011-07-08
- Data Source
  KAKENHI-PROJECT-22560332
[Presentation] Thermally Stable TiN Schottky Contact on AlGaN/GaN Heterostructure2010
- Author(s)
  Jin-Ping Ao, et al.
- Organizer
  The 11^<th> International Symposium on Sputtering and Plasma Processes
- Place of Presentation
  Kyoto Research Park, Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-22560332
[Presentation] Evaluation of TiN Gate AlGaN/GaN HFET2007
- Author(s)
  J P. Ao, et. al.
- Organizer
  68th Autumn Meeting of the Japan Society of Applied Physics
- Place of Presentation
  Hokkaido, Japan
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560337
[Presentation] TiNゲートAlGaN/GaN HFETの特性評価2007
- Author(s)
  敖金平等
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-06
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560337

1. FUJIWARA Shigeki (90434505)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
2. 大浦邦彦 (40277819)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. 北畑洋 (60161486)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. 立原敬一 (90570903)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

AO Jin-ping 敖 金平

敖 金平 アオ ジンピン

Research Projects

Research Products

Co-Researchers

Efforts to implement wireless charging for medical devices.

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of GaN pH sensor for the surveillance of cell culturePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Investigation of Refractory Metal Gate on AlGaN/GaN HFETPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Book] Schottky Diodes: Properties, Preparation and Applications2008

Author(s)

Publisher

Description

Data Source

[Journal Article] Thermally stable TiN Schottky contact on AlGaN/GaN heterostructure2013

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Influence of Dry Recess Process on Enhancement-Mode GaN Metal-Oxide-Semiconductor Field-Effect Transistors2013

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Design Fabrication and Characterization of GaN MOSFET (in Chinese)2012

Author(s)

Journal Title

URL

Data Source

[Journal Article] GaN MOSFET with a gate SiO_2 insulator deposited by silane-based plasma-enhanced chemical vapor deposition2011

Author(s)

Journal Title

Data Source

[Journal Article] GaN MOSFET with a gate SiO2insulator deposited by silane-basedplasma-enhanced chemical vapor deposition2011

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Schottky Diodes : Properties, Preparation and Applications2008

Author(s)

Journal Title

Description

Data Source

[Presentation] Synthesis and Application of Metal Nitrides as Schottky Electrodes for Gallium Nitride Electron Devices2012

Author(s)

Organizer

Place of Presentation

Data Source

[Presentation] Synthesis and Application of Metal Nitrides as Schottky Electrodes for Gallium Nitride Electron Devices2012

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Thermally Stable TiN Schottky Contact on AlGaN/GaN Heterostructure2011

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Thermally Stable TiN Schottky Contact on AlGaN/GaN Heterostructure2011

Author(s)

Organizer

Place of Presentation

Year and Date

AO Jin-ping 敖金平

敖金平アオジンピン