Yohei OTANI 王谷洋平

… Alternative Names

王谷洋平オウタニヨウヘイ

OTANI Yohei 王谷洋平

Less

Researcher Number	40434485
Other IDs
Affiliation (Current)	2025: 公立諏訪東京理科大学, 工学部, 准教授
Affiliation (based on the past Project Information) *help	2014 – 2016: 諏訪東京理科大学, 工学部, 准教授 2012: 諏訪東京理科大学, システム工学部, 准教授 2010 – 2011: 諏訪東京理科大学, システム工学部, 講師 2007: Tokyo University of Science, Suwa, システム工学部, 助教 2006: 諏訪東京理科大学, システム工学部, 助手
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials Except Principal Investigator Electronic materials/Electric materials
Keywords	Principal Investigator 光スイッチ / 有機化学気相堆積法 / 薄膜 / セラミックス / 電子・電気材料 / 結晶成長 Except Principal Investigator MIS構造 / 誘電体物性 / MOS構造 / プラズマ酸化 … More / 超薄膜 / 表面・界面物性 / 誘電体薄膜 / ＭＩＳ構造 / ラジカル酸化 / ゲルマニウム / 金属ジャーマネイト / 原子層堆積法 / プラズマ成膜 / 原子層堆積 / 酸化アルミニウム / 酸化ハフニウム / 原子層堆積法 / MOS 構造 Less

Research on high-k germanates and their direct formations on germanium substrates at low-temperature
- Principal Investigator
  
  Fukuda Yukio
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo University of Science, Suwa
Low-temperature formation and defect control of high-k dielectrics by PA-ALD
- Principal Investigator
  
  FUKUDA Yukio
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo University of Science, Suwa
液体原料直接噴霧型有機金属化学気相堆積法の開発及び薄膜作製への応用Principal Investigator
- Principal Investigator
  
  王谷洋平
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Young Scientists (Start-up)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo University of Science, Suwa

All 2016 2015 2013 2012 2011 2010 2007 Other

All Journal Article Presentation

[Journal Article] Interface State Density Evaluation of p-Type and n-Type Ge/GeNx Structures by Conductance Technique2015
- Author(s)
  T. Iwasaki, T. Ono, Y. Otani, Y. Fukuda, and H. Okamoto
- Journal Title
  
  Electronics and Communications in Japan
  
  Volume: 98 Issue: 6 Pages: 8-15
- DOI
  10.1002/ecj.11655
- NAID
  210000188429
- Data Source
  KAKENHI-PROJECT-26420281
[Journal Article] SpontaneousformationofaluminumgermanateonGe(100)byatomiclayerdepositionwithtrimethylaluminumandmicrowave-generatedatomicoxygen2013
- Author(s)
  Y.Fukuda,H.Ishizaki,Y.Otani,C.Yamamoto,J.Yamanaka,T.Sato,T.Takamatsu,H.Okamoto,andH.Narita
- Journal Title
  
  Appl.Phys.Lett
  
  Volume: 102
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560307
[Journal Article] Thermal Improvement and Stability of Si_3N_4/GeN_x/p- and n-Ge Structures Prepared by Electron-Cyclotron-Resonance Plasma Nitridation and Sputtering at Room Temperature2012
- Author(s)
  Y.Fukuda,H.Okamoto,T.Iwasaki,K.Izumi,Y.Otani,H.Ishizaki,andT.Ono
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 51 Issue: 9R Pages: 090204-090204
- DOI
  10.1143/jjap.51.090204
- NAID
  40019424880
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560307
[Journal Article] TrapdensityofGeNx/Geinterfacefabricatedbyelectroncyclotronresonanceplasmanitridation2011
- Author(s)
  Y.Fukuda,Y.Otani,H.Toyota,andT.Ono
- Journal Title
  
  Appl.Phys.Lett.
  
  Volume: 99 Issue: 2
- DOI
  10.1063/1.3611581
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560307
[Journal Article] Effects of postdeposition annealing ambient on hysteresis in an Al2O3/GeO2 gate-dielectric stack on Ge2011
- Author(s)
  Y.Fukuda,Y.Otani,T.Sato,H.Toyota,001100203040andT.Ono
- Journal Title
  
  J.Appl.Phys
  
  Volume: 110 Issue: 2 Pages: 110026108-110026108
- DOI
  10.1063/1.3610796
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560307
[Journal Article] Surface passivation of p-type Ge substrate with high-quality GeN_x layer formed by electron cyclotron resonance plasmanitridation at low temperature2011
- Author(s)
  Y.Fukuda,H.Okamoto,T.Iwasaki,Y.Otani,andT.Ono
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: 99 Issue: 13
- DOI
  10.1063/1.3647621
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560307
[Journal Article] Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition2010
- Author(s)
  H. Ishizaki, Y. Otani, Y. Fukuda, T.Sato, T. Takamatsu, and T. Ono
- Journal Title
  
  ECS Trans
  
  Volume: 33 Pages: 227-233
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560307
[Journal Article] Formation of Al_2O_3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique2010
- Author(s)
  H.Ishizaki, M.Iida, Y.Otani, Y.Fukuda, T.Sato, T.Takamatsu, T.Ono
- Journal Title
  
  Electrochemical Society Transactions
  
  Volume: 33(6) Pages: 227-233
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560307
[Journal Article] Fabrication of Ferroelectric Pb(Zr,Ti)O_3 Thin Films by Spray Metalorganic Chemical Vapor Deposition2007
- Author(s)
  Yohei Otani
- Journal Title
  
  Japanese Journal of Applied Physics 46
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18860075
[Presentation] ラジカル援用原子層堆積法で形成したAl2O3/GeO2/p-Ge基板上のゲート電極金属が電気的特性に及ぼす影響2016
- Author(s)
  山田大地、王谷洋平、山本千綾、山中淳二、佐藤哲也、岡本浩、福田幸夫
- Organizer
  応用物理学会北陸・信越支部第3回有機・無機エレクトロニクスシンポジウム
- Place of Presentation
  石川県政記念しいのき迎賓館
- Year and Date
  2016-07-15
- Data Source
  KAKENHI-PROJECT-26420281
[Presentation] Effects of gate-electrode metals and postdeposition treatments on the electrical properties of Al2O3/GeO2 gate stack grown on Ge substrate by radical-enhanced atomic layer deposition2016
- Author(s)
  Yukio Fukuda, Daichi Yamada, Yohei Otani, Chiaya Yamamoto, Junji Yamanaka, Tetsuya Sato, Hiroshi Okamoto
- Organizer
  ALD 2016 Ireland
- Place of Presentation
  Dublin Convention Center, Dublin
- Year and Date
  2016-07-24
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26420281
[Presentation] Effects of postdeposition treatments on the electrical properties of Al2O3/GeO2 gate stack grown on Ge substrate by radical enhanced atomic layer deposition2016
- Author(s)
  H. Okamoto, D. Yamada, H. Narita, Y. Otani, C. Yamamoto, J. Yamanaka, T. Sato, and Y. Fukuda
- Organizer
  9th International Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Tohoku University
- Year and Date
  2016-01-11
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26420281
[Presentation] REALD形成Al2O3/GeO2/p-GeMOSキャパシターの電気的特性に及ぼすゲート電極金属の影響2016
- Author(s)
  山田大地、王谷洋平、山本千綾、山中淳二、佐藤哲也、岡本浩、福田幸夫
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  新潟市・朱鷺メッセ
- Data Source
  KAKENHI-PROJECT-26420281
[Presentation] RE-ALD形成Al2O3/GeO2/p-Geの電気的特性に及ぼす熱処理と酸素ラジカル照射の効果2015
- Author(s)
  梁池昂生、横平知也、山田大地、王谷洋平、柳炳學、関渓太、佐藤哲也、福田幸夫
- Organizer
  応用物理学会第20回ゲートスタック研究会
- Place of Presentation
  三島
- Year and Date
  2015-01-30
- Data Source
  KAKENHI-PROJECT-26420281
[Presentation] InsituformationofhafniumsilicateonSisubstratebyatomiclayerdepositionwithtetrakis(dimethylamino)hafniumandmicrowave-generatedatomicoxygen2013
- Author(s)
  H.Ishizaki,Y.Otani,C.Yamamoto,J.Yamanaka,T.Sato,T.Takamatsu,andY.Fukuda
- Organizer
  the8thInternationalConferenceonSiliconEpitaxyandHeterostructures
- Place of Presentation
  Fukuoka(Japan)
- Data Source
  KAKENHI-PROJECT-22560307
[Presentation] Insituformationofaluminumgermanateinterlayerforhigh-k/Gemetal-oxide-semiconductorstructuresbyatomiclayerdepositionwithtrimethylaluminumandmicrowave-generatedatomicoxygen2013
- Author(s)
  T.Hanada,K.Yanachi,H.Ishizaki,Y.Otani,C.Yamamoto,J.Yamanaka,T.Sato,T.Takamatsu,andY.Fukuda
- Organizer
  the12thInternationalSymposiumonSputtering&PlasmaProcesses
- Place of Presentation
  Kyoto(Japan),tobepresented
- Data Source
  KAKENHI-PROJECT-22560307
[Presentation] 極薄TiOx層を挿入したAl/n-Ge(100)接触特性のPMA処理温度依存性2012
- Author(s)
  和光賢司、花田毅広、石崎博基、王谷洋平、佐藤哲也、岡本浩、小野俊郎、福田幸夫
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-22560307
[Presentation] FormationandCharacterizationofElectronCyclotronResonancePlasma-derivedGermaniumNitrideforGe-basedCMOSapplications2012
- Author(s)
  Y.Fukuda,Y.Otani,T.Sato,H.Okamoto,andT.Ono
- Organizer
  BIT'sAnnualWorldCongressofAdvancedMaterials-2012
- Place of Presentation
  Beijing(China)
- Data Source
  KAKENHI-PROJECT-22560307
[Presentation] マイクロ波生成リモートプラズマ支援ALD法によるSi基板上へのHfSixOy薄膜の低温形成2012
- Author(s)
  石崎博基、飯田真正、王谷洋平、山本千綾、山中淳二、佐藤哲也、福田幸夫
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-15
- Data Source
  KAKENHI-PROJECT-22560307
[Presentation] マイクロ波生成プラズマ支援ALD法によるSi基板上HfO_2薄膜の形成2011
- Author(s)
  飯田真正、石崎博樹、王谷洋平、森田直樹、佐藤哲也、岡本浩、小野俊郎、福田幸夫
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-25
- Data Source
  KAKENHI-PROJECT-22560307
[Presentation] Interface properties of GeNx/Ge fabricated by electron-cyclotron-resonance plasma nitridation2011
- Author(s)
  Y.Otani, Y.Fukuda, T.Sato, H.Toyota, H.Okamoto, T.Ono
- Organizer
  Materials Research Society-2011 MRS Spring Meeting and Exhibit
- Place of Presentation
  San Francisco
- Data Source
  KAKENHI-PROJECT-22560307
[Presentation] InterfacepropertiesofGeNx/Gefabricatedbyelectroncyclotronresonanceplasmanitridation2011
- Author(s)
  Y.Otani,Y.Fukuda,T.Sato,H.Toyota,H.Okamoto,andT.Ono
- Organizer
  MaterialsResearchSocietySpringMeetingandExhibit
- Place of Presentation
  SanFrancisco(USA)
- Data Source
  KAKENHI-PROJECT-22560307
[Presentation] Formation of Al_2O_3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique2010
- Author(s)
  H.Ishizaki, M.Iida, Y.Otani, Y.Fukuda, T.Sato, T.Takamatsu, T.Ono
- Organizer
  218^<th> Electrochemical Society Meeting
- Place of Presentation
  Las Vegas, USA
- Year and Date
  2010-10-15
- Data Source
  KAKENHI-PROJECT-22560307
[Presentation] FormationofAl2O3FilmonSiSubstratebyMicrowaveGeneratedRemotePlasmaAssistedAtomicLayerDepositionTechnique2010
- Author(s)
  H.Ishizaki,YOtani,Y.Fukuda,T.Sato,T.Takamatsu,andT.Ono
- Organizer
  218thElectrochemicalSocietyMeeting
- Place of Presentation
  LasVegas(USA)
- Year and Date
  2010-10-15
- Data Source
  KAKENHI-PROJECT-22560307
[Presentation] マイクロ波リモートプラズマを用いた原子層堆積法によるSi基板上へのAl_2O_3薄膜の形成2010
- Author(s)
  石崎博基、飯田真正、王谷洋平、福田幸夫、佐藤哲也、高松利行、小野俊郎
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-22560307
[Presentation] スプレーMOCVD法による微量置換元素供給法の検討2007
- Author(s)
  王谷洋平
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道札幌市北海道工業大学
- Year and Date
  2007-09-15
- Data Source
  KAKENHI-PROJECT-18860075
[Presentation] Fabrication of Lead-based Ferroelectric Thin Films by Spray-MOCVD2007
- Author(s)
  Yohei Otani
- Organizer
  13th US-Japan Seminar on Dielectric and Piezoelectric Ceramics
- Place of Presentation
  Awaji Island, Japan
- Year and Date
  2007-11-06
- Data Source
  KAKENHI-PROJECT-18860075
[Presentation] Formation of Metal Germanate Interlayer for High-k/Ge Metal-Oxide-Semiconductor Structures by Atomic Layer Deposition Assisted by Microwave-generated Atomic Oxygen
- Author(s)
  Y. Otani, K. Yanachi, H. Ishizaki, Y. Fukuda, C. Yamamoto, J. Yamanaka, and T.Sato
- Organizer
  The 14th International Conference on Atomic Layer Deposition
- Place of Presentation
  Kyoto
- Year and Date
  2014-06-15 – 2014-06-18
- Data Source
  KAKENHI-PROJECT-26420281
[Presentation] ALD形成Al2O3/GeO2/p-Geの電気的特性に及ぼす熱処理効果の検討
- Author(s)
  梁池昂生、横平知也、山田大地、王谷洋平、関渓太、佐藤哲也、福田幸夫
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-26420281
[Presentation] Al2O3/GeO2/p-Geの電気的特性に及ぼす酸素ラジカル照射の効果
- Author(s)
  王谷洋平、梁池昂生、横平知也、山田大地、関渓太、佐藤哲也、福田幸夫
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-26420281

1. FUKUDA Yukio (50367546)

# of Collaborated Projects: 2 results

# of Collaborated Products: 27 results
2. ISHIZAKI Hiroki (20383507)

# of Collaborated Projects: 1 results

# of Collaborated Products: 12 results
3. 岡本浩 (00513342)

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results
4. 佐藤哲也 (60252011)

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results

Yohei OTANI 王谷 洋平

王谷 洋平 オウタニ ヨウヘイ

OTANI Yohei 王谷 洋平

Research Projects

Research Products

Co-Researchers

Research on high-k germanates and their direct formations on germanium substrates at low-temperature

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Low-temperature formation and defect control of high-k dielectrics by PA-ALD

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

液体原料直接噴霧型有機金属化学気相堆積法の開発及び薄膜作製への応用Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Interface State Density Evaluation of p-Type and n-Type Ge/GeNx Structures by Conductance Technique2015

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] SpontaneousformationofaluminumgermanateonGe(100)byatomiclayerdepositionwithtrimethylaluminumandmicrowave-generatedatomicoxygen2013

Author(s)

Journal Title

Data Source

[Journal Article] Thermal Improvement and Stability of Si_3N_4/GeN_x/p- and n-Ge Structures Prepared by Electron-Cyclotron-Resonance Plasma Nitridation and Sputtering at Room Temperature2012

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] TrapdensityofGeNx/Geinterfacefabricatedbyelectroncyclotronresonanceplasmanitridation2011

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Effects of postdeposition annealing ambient on hysteresis in an Al2O3/GeO2 gate-dielectric stack on Ge2011

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Surface passivation of p-type Ge substrate with high-quality GeN_x layer formed by electron cyclotron resonance plasmanitridation at low temperature2011

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition2010

Author(s)

Journal Title

Data Source

[Journal Article] Formation of Al_2O_3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique2010

Author(s)

Journal Title

Data Source

[Journal Article] Fabrication of Ferroelectric Pb(Zr,Ti)O_3 Thin Films by Spray Metalorganic Chemical Vapor Deposition2007

Author(s)

Journal Title

Data Source

[Presentation] ラジカル援用原子層堆積法で形成したAl2O3/GeO2/p-Ge基板上のゲート電極金属が電気的特性に及ぼす影響2016

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Effects of gate-electrode metals and postdeposition treatments on the electrical properties of Al2O3/GeO2 gate stack grown on Ge substrate by radical-enhanced atomic layer deposition2016

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Effects of postdeposition treatments on the electrical properties of Al2O3/GeO2 gate stack grown on Ge substrate by radical enhanced atomic layer deposition2016

Yohei OTANI 王谷洋平

王谷洋平オウタニヨウヘイ

OTANI Yohei 王谷洋平