Matsuzaki Kosuke 松崎功佑

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Kosuke Matsuzaki 松崎功佑

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Researcher Number	40571500
Affiliation (Current)	2025: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員
Affiliation (based on the past Project Information) *help	2021 – 2025: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員 2019 – 2020: 東京工業大学, 元素戦略研究センター, 特任助教 2014 – 2015: 東京工業大学, 元素戦略研究センター, 特任助教
Review Section/Research Field	Principal Investigator Medium-sized Section 36:Inorganic materials chemistry, energy-related chemistry, and related fields / Basic Section 36010:Inorganic compounds and inorganic materials chemistry-related / Basic Section 26020:Inorganic materials and properties-related / Thin film/Surface and interfacial physical properties Except Principal Investigator Basic Section 26010:Metallic material properties-related / Basic Section 21060:Electron device and electronic equipment-related
Keywords	Principal Investigator 太陽電池材料 / 太陽電池 / ドーピング / 窒化物半導体 / 窒化物 / 欠陥 / ハライド材料 / 溶液法 / 正孔輸送材料 / キャリアドーピング … More / 複合欠陥 / アンバイポーラトランジスタ / 両極性半導体 / トランジスタ / 薄膜成長 / 両極性ドーピング / 半導体 / アモノサーマル / 薄膜 / 窒化物合成 / 後熱処理 / 微細構造観察 / ハーフメタリック材料 / エピタキシャル薄膜 / 構造欠陥 / 価数制御 / マグネタイト … More Except Principal Investigator 機械学習 / 計算材料データベース / 点欠陥 / 高温超伝導 / 六方晶窒化ホウ素 / グラフェン / 電子放出源 Less

ユニバーサルな点欠陥形成エネルギーの高精度予測と材料探索への応用
- Principal Investigator
  
  熊谷悠
- Project Period (FY)
  2025 – 2027
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 26010:Metallic material properties-related
- Research Institution
  Tohoku University
Defect Control in Solar Cell Materials via Impurity DopingPrincipal Investigator
- Principal Investigator
  
  松崎功佑
- Project Period (FY)
  2025 – 2027
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 36010:Inorganic compounds and inorganic materials chemistry-related
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Development of super-coherent electron emission devices based on atomic layer materials/ high temperature superconductor stacking structures
- Principal Investigator
  
  村上勝久
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Development of High-Performance Hole Transport Materials by Isovalent ImpuritiesPrincipal Investigator
- Principal Investigator
  
  Matsuzaki Kosuke
- Project Period (FY)
  2022 – 2023
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 36:Inorganic materials chemistry, energy-related chemistry, and related fields
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Crystal growth of InN semiconductor for high performance pn junction diodesPrincipal Investigator
- Principal Investigator
  
  Matsuzaki Kosuke
- Project Period (FY)
  2019 – 2020
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 36:Inorganic materials chemistry, energy-related chemistry, and related fields
- Research Institution
  Tokyo Institute of Technology
Bipolar conduction control of nitride semiconductor thin film and its application to solar cellsPrincipal Investigator
- Principal Investigator
  
  Matsuzaki Kosuke
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 26020:Inorganic materials and properties-related
- Research Institution
  National Institute of Advanced Industrial Science and Technology
  Tokyo Institute of Technology
Novel functionality in stoichiometrically controlled Fe3O4 heterointerfacePrincipal Investigator
- Principal Investigator
  
  Kosuke Matsuzaki
- Project Period (FY)
  2014 – 2015
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Tokyo Institute of Technology

All 2023 2022 2020 2019 2016 2015 2014

All Journal Article Presentation

[Journal Article] Design, Synthesis, and Optoelectronic Properties of the High-Purity Phase in Layered AETMN2 (AE = Sr, Ba; TM = Ti, Zr, Hf) Semiconductors2022
- Author(s)
  Akihiro Shiraishi, Shigeru Kimura, Xinyi He, Naoto Watanabe, Takayoshi Katase, Keisuke Ide, Makoto Minohara, Kosuke Matsuzaki, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, and Toshio Kamiya
- Journal Title
  
  Inorg. Chem.
  
  Volume: 61 Issue: 17 Pages: 6650-6659
- DOI
  10.1021/acs.inorgchem.2c00604
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K21075, KAKENHI-PROJECT-19H02425, KAKENHI-PROJECT-19H02427, KAKENHI-PROJECT-22K18881, KAKENHI-PROJECT-20KK0117, KAKENHI-PROJECT-21H04612, KAKENHI-PROJECT-22KJ1339, KAKENHI-PROJECT-16KK0107, KAKENHI-PROJECT-23K23034, KAKENHI-PROJECT-23K23216
[Journal Article] Hole-Doping to a Cu(I)-Based Semiconductor with an Isovalent Cation: Utilizing a Complex Defect as a Shallow Acceptor2022
- Author(s)
  Matsuzaki Kosuke、Tsunoda Naoki、Kumagai Yu、Tang Yalun、Nomura Kenji、Oba Fumiyasu、Hosono Hideo
- Journal Title
  
  Journal of the American Chemical Society
  
  Volume: 144 Issue: 36 Pages: 16572-16578
- DOI
  10.1021/jacs.2c06283
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22K19094, KAKENHI-PROJECT-20H00302
[Journal Article] Low Residual Carrier Density and High In-Grain Mobility in Polycrystalline Zn3N2 Films on a Glass Substrate2022
- Author(s)
  Kaiwen Li, Atsushi Shimizu, Xinyi He, Keisuke Ide*, Kota Hanzawa, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Qun Zhang*, and Toshio Kamiya
- Journal Title
  
  ACS Applied Electronic Materials
  
  Volume: 4 Issue: 4 Pages: 2026-2031
- DOI
  10.1021/acsaelm.2c00181
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02427, KAKENHI-PROJECT-20H02433, KAKENHI-PROJECT-21H04612, KAKENHI-PROJECT-21K18814
[Journal Article] Hydrogen-Defect Termination in SnO for p-Channel TFTs2020
- Author(s)
  Lee Alex W.、Le Dong、Matsuzaki Kosuke、Nomura Kenji
- Journal Title
  
  ACS Applied Electronic Materials
  
  Volume: 2 Issue: 4 Pages: 1162-1168
- DOI
  10.1021/acsaelm.0c00149
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02427, KAKENHI-PROJECT-19K22228
[Journal Article] Resistive switching memory effects in p-type hydrogen-treated CuO nanowire2020
- Author(s)
  Huang Chi-Hsin、Tang Yalun、Matsuzaki Kosuke、Nomura Kenji
- Journal Title
  
  Applied Physics Letters
  
  Volume: 117 Issue: 4 Pages: 043502-043502
- DOI
  10.1063/5.0010839
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02427, KAKENHI-PROJECT-19K22228
[Journal Article] Back-Channel Defect Termination by Sulfur for p-Channel Cu2O Thin-Film Transistors2020
- Author(s)
  Chang Hsuan、Huang Chi-Hsin、Matsuzaki Kosuke、Nomura Kenji
- Journal Title
  
  ACS Applied Materials & Interfaces
  
  Volume: 12 Issue: 46 Pages: 51581-51588
- DOI
  10.1021/acsami.0c11534
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02427, KAKENHI-PROJECT-19K22228
[Journal Article] Symmetric Ambipolar Thin-Film Transistors and High-Gain CMOS-like Inverters Using Environmentally Friendly Copper Nitride2019
- Author(s)
  Matsuzaki Kosuke、Katase Takayoshi、Kamiya Toshio、Hosono Hideo
- Journal Title
  
  ACS Applied Materials & Interfaces
  
  Volume: 11 Issue: 38 Pages: 35132-35137
- DOI
  10.1021/acsami.9b12068
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K22228, KAKENHI-PROJECT-19H02425, KAKENHI-PROJECT-19H02427
[Journal Article] Atomic and electronic structure of twin growth defects in magnetite2016
- Author(s)
  Daniel Gilks, Zlatko Nedelkoski, Leonardo Lari, Balati Kuerbanjiang, Kosuke Matsuzaki, Tomofumi Susaki, Demie Kepaptsoglou, Quentin Ramasse, Richard Evans, Keith McKenna, Vlado K. Lazarov
- Journal Title
  
  Scientific Reports
  
  Volume: 6:20943 Issue: 1 Pages: 20943-20943
- DOI
  10.1038/srep20943
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26870188, KAKENHI-PROJECT-25286056
[Journal Article] Atomic study of Fe3O4/SrTiO3 Interface2015
- Author(s)
  D. Gilks, D.M. Kepaptsoglou, K. McKenna, L. Lari, Q.M. Ramasse, K. Matsuzaki, T. Susaki, V.K. Lazarov
- Journal Title
  
  Microsc. Microanal.
  
  Volume: 21 (Suppl 3) Issue: S3 Pages: 1299-1300
- DOI
  10.1017/s143192761500728x
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26870188, KAKENHI-PROJECT-25286056
[Journal Article] A STEM study of twin defects in Fe3O4(111)/YZO(111)2014
- Author(s)
  D Gilks, L Lari, K Matsuzaki, R Evans, K McKenna, T Susaki, V K Lazarov
- Journal Title
  
  Journal of Physics: Conference Series
  
  Volume: 522 Pages: 012036-012036
- DOI
  10.1088/1742-6596/522/1/012036
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26870188
[Journal Article] Structural study of Fe3O4(111) thin films with bulk like magnetic and magnetotransport behaviour2014
- Author(s)
  D. Gilks, L. Lari, K. Matsuzaki, H. Hosono, T. Susaki, and V. K. Lazarov
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 115 Issue: 17 Pages: 17C107-17C107
- DOI
  10.1063/1.4862524
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26870188
[Presentation] Pd0価ドーピングによる窒化銅半導体のバンド構造制御と熱電特性2023
- Author(s)
  松崎功佑, 片瀬貴義, 熊谷悠, 角田直樹, 原田航, 大場史康, 細野秀雄
- Organizer
  日本セラミックス協会第36回秋季シンポジウム,
- Data Source
  KAKENHI-PROJECT-22K19094
[Presentation] 複合欠陥を用いたCu(I)半導体材料への p型ドーピング法の開発2023
- Author(s)
  松崎功佑,熊谷悠, 大場史康, 細野秀雄
- Organizer
  第84回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-22K19094

1. 熊谷悠 (00722464)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
2. 村上勝久 (20403123)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. 若家冨士男 (60240454)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. 清原慎 (20971881)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. 反保衆志 (20392631)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. 片瀬貴義

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Matsuzaki Kosuke 松崎 功佑

Kosuke Matsuzaki 松崎 功佑

Research Projects

Research Products

Co-Researchers

ユニバーサルな点欠陥形成エネルギーの高精度予測と材料探索への応用

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Defect Control in Solar Cell Materials via Impurity DopingPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of super-coherent electron emission devices based on atomic layer materials/ high temperature superconductor stacking structures

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of High-Performance Hole Transport Materials by Isovalent ImpuritiesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Crystal growth of InN semiconductor for high performance pn junction diodesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Bipolar conduction control of nitride semiconductor thin film and its application to solar cellsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Novel functionality in stoichiometrically controlled Fe3O4 heterointerfacePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Design, Synthesis, and Optoelectronic Properties of the High-Purity Phase in Layered AETMN2 (AE = Sr, Ba; TM = Ti, Zr, Hf) Semiconductors2022

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Hole-Doping to a Cu(I)-Based Semiconductor with an Isovalent Cation: Utilizing a Complex Defect as a Shallow Acceptor2022

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Low Residual Carrier Density and High In-Grain Mobility in Polycrystalline Zn3N2 Films on a Glass Substrate2022

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Hydrogen-Defect Termination in SnO for p-Channel TFTs2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Resistive switching memory effects in p-type hydrogen-treated CuO nanowire2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Back-Channel Defect Termination by Sulfur for p-Channel Cu2O Thin-Film Transistors2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Symmetric Ambipolar Thin-Film Transistors and High-Gain CMOS-like Inverters Using Environmentally Friendly Copper Nitride2019

Author(s)

Journal Title

Matsuzaki Kosuke 松崎功佑

Kosuke Matsuzaki 松崎功佑