Kurosawa Masashi 黒澤昌志

… Alternative Names

KUROSAWA Masashi 黒澤昌志

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Researcher Number	40715439
Other IDs	https://orcid.org/0000-0001-9151-0820
Affiliation (Current)	2024: 名古屋大学, 工学研究科, 准教授
Affiliation (based on the past Project Information) *help	2021 – 2024: 名古屋大学, 工学研究科, 准教授 2016 – 2022: 名古屋大学, 工学研究科, 講師 2015: 名古屋大学, 未来材料・システム研究所, 特任講師
Review Section/Research Field	Principal Investigator Transformative Research Areas, Section (II) / Medium-sized Section 21:Electrical and electronic engineering and related fields / Basic Section 21050:Electric and electronic materials-related / Science and Engineering / Electronic materials/Electric materials Except Principal Investigator Medium-sized Section 28:Nano/micro science and related fields / Thin film/Surface and interfacial physical properties / Medium-sized Section 29:Applied condensed matter physics and related fields / Electronic materials/Electric materials
Keywords	Principal Investigator 結晶成長 / IV族混晶 / ゲルマニウムスズ / 薄膜 / 14族ナノシート / 14族半導体 / シリコンスズ / 熱電変換 / フォノンドラッグ / 大気安定 … More / 絶縁膜上 / 新機能開拓 / デバイス応用 / 物性評価 / 薄膜合成 / 熱スイッチ / 水素吸着 / ゲルマネン / ナノシート / 熱電応用 / 熱安定性 / 大気安定性 / 二次元物質 / ゲルマニウム / 熱起電力 / ドーピング / フォノンドラッグ熱電能 / バンドエンジニアリング / 散乱機構 / 結晶粒界 / ボンドエンジニアリング / 薄膜成長 / その場観察 / 偏析溶融成長 / MOSFET / n型ドーピング … More Except Principal Investigator ゲルマニウム / シリコン / IV族半導体 / 結晶成長 / 電子状態 / 二次元結晶 / 分子線エピタキシー / フォノン / ナノ構造 / 熱電材料 / Ⅳ族半導体 / 集積回路 / エネルギーバンド / ゲルマニウム錫 / 表面・界面物性 / 結晶工学 / 半導体物性 / ゲルマネン / ゲルマネニウム / 電子物性 / ポストグラフェン / 表面偏析 / シリセン Less

Science on group-14 nanosheetsArea Organizer
- Area Organizer
  
  黒澤昌志
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Transformative Research Areas (B)
14族ナノシートに関する総括的研究Principal Investigator
- Principal Investigator
  
  黒澤昌志
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Transformative Research Areas (B)
- Review Section
  
  Transformative Research Areas, Section (II)
- Research Institution
  Nagoya University
14族ナノシートの合成Principal Investigator
- Principal Investigator
  
  黒澤昌志
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Transformative Research Areas (B)
- Review Section
  
  Transformative Research Areas, Section (II)
- Research Institution
  Nagoya University
14族混晶半導体におけるフォノンドラッグエンジニアリングPrincipal Investigator
- Principal Investigator
  
  黒澤昌志
- Project Period (FY)
  2024 – 2028
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Nagoya University
水素吸脱着によるゲルマネンの物性変化を活用した熱スイッチ材料の創製Principal Investigator
- Principal Investigator
  
  黒澤昌志
- Project Period (FY)
  2023 – 2024
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Nagoya University
大気・熱安定性に優れる14族2.5次元物質の創製と熱電応用への展開Principal Investigator
- Principal Investigator
  
  黒澤昌志
- Project Period (FY)
  2022 – 2023
- Research Category
  
  Grant-in-Aid for Transformative Research Areas (A)
- Review Section
  
  Transformative Research Areas, Section (II)
- Research Institution
  Nagoya University
IV族混晶バンドエンジニアリングを基軸とした巨大熱電能の制御とデバイス応用Principal Investigator
- Principal Investigator
  
  黒澤昌志
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Nagoya University
IV族混晶結晶粒界で生じる特異なキャリア・フォノン散乱の機構解明と制御Principal Investigator
- Principal Investigator
  
  黒澤昌志
- Project Period (FY)
  2020 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya University
A challenge of bond engineering for the creation of direct transition silicon tinPrincipal Investigator
- Principal Investigator
  
  Kurosawa Masashi
- Project Period (FY)
  2019 – 2020
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Nagoya University
Development of Si-based Dirac electron superlattice and its thermoelectric devices based on phonon and electron trapsport physics
- Principal Investigator
  
  中村芳明
- Project Period (FY)
  2019 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 28:Nano/micro science and related fields
- Research Institution
  Osaka University
Self-organized Formation of Ge-based Two-dimensional Crystals and Control of Crystalline Structure and Electronic State
- Principal Investigator
  
  Ohta Akio
- Project Period (FY)
  2018 – 2019
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 29:Applied condensed matter physics and related fields
- Research Institution
  Nagoya University
Fundamental research on germanium-tin narrow wires for high-speed/low-power MOSFETsPrincipal Investigator
- Principal Investigator
  
  KUROSAWA Masashi
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
Growth and Characterization of Silicon-based Two-Dimensional Materials
- Principal Investigator
  
  Ohta Akio
- Project Period (FY)
  2015 – 2016
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
Establishment of Fundamental Engineering of Sn-related Group-IV Semiconductor Materials for Multi-Functional and Low-Power Electronics
- Principal Investigator
  
  ZAIMA SHIGEAKI
- Project Period (FY)
  2014 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Nagoya University

All 2023 2022 2021 2020 2019 2018 2017 2016 2015 2014 Other

All Journal Article Presentation Book

[Book] 「共晶系で生じる析出現象を応用したIV族系ナノシート形成技術」、ポストグラフェン材料の創製と用途開発最前線 -二次元ナノシートの物性評価、構造解析、合成、成膜プロセス技術-2020
- Author(s)
  黒澤昌志, 大田晃生
- Total Pages
  10
- Publisher
  (株)エヌ・ティー・エス
- ISBN
- Data Source
  KAKENHI-PROJECT-18K19020
[Journal Article] Lattice-matched growth of high-Sn-content (x~0.1) Si1-xSnx layers on Si1-yGey buffers using molecular beam epitaxy2023
- Author(s)
  Fujimoto Kazuaki、Kurosawa Masashi、Shibayama Shigehisa、Sakashita Mitsuo、Nakatsuka Osamu
- Journal Title
  
  Applied Physics Express
  
  Volume: 16 Issue: 4 Pages: 045501-045501
- DOI
  10.35848/1882-0786/acc3da
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H01366
[Journal Article] Superior power generation capacity of GeSn over Si demonstrated in cavity-free thermoelectric device architecture2023
- Author(s)
  Mahfuz Md Mehdee Hasan、Katayama Kazuaki、Ito Yoshitsune、Fujimoto Kazuaki、Tomita Motohiro、Kurosawa Masashi、Matsuki Takeo、Watanabe Takanobu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: SC Pages: SC1058-SC1058
- DOI
  10.35848/1347-4065/acaed1
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21H01366, KAKENHI-PROJECT-23K22800
[Journal Article] Heteroepitaxial growth of CaGe2 films on high-resistivity Si(111) substrates and its application for germanane synthesizing2023
- Author(s)
  Okada Kazuya、Shibayama Shigehisa、Sakashita Mitsuo、Nakatsuka Osamu、Kurosawa Masashi
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 161 Pages: 107462-107462
- DOI
  10.1016/j.mssp.2023.107462
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-22H05456
[Journal Article] Solid-phase crystallization of ultra-thin amorphous Ge layers on insulators2022
- Author(s)
  Oishi Ryo、Asaka Koji、Bolotov Leonid、Uchida Noriyuki、Kurosawa Masashi、Nakatsuka Osamu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: SC Pages: SC1086-SC1086
- DOI
  10.35848/1347-4065/ac4686
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-20H05188
[Journal Article] Sn-incorporation effect on thermoelectric properties of Sb-doped Ge-rich Ge1-x-ySixSny epitaxial layers grown on GaAs(001)2022
- Author(s)
  Kurosawa Masashi、Nakata Masaya、Zhan Tianzhuo、Tomita Motohiro、Watanabe Takanobu、Nakatsuka Osamu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: 8 Pages: 085502-085502
- DOI
  10.35848/1347-4065/ac7bc7
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21H01366, KAKENHI-PROJECT-23K22800
[Journal Article] Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region2022
- Author(s)
  Ying Peng, Lei Miao,* Chengyan Liu, Haili Song, Masashi Kurosawa, Osamu Nakatsuka, Song Yi Back, Jong Soo Rhyee, Masayuki Murata, Sakae Tanemura, Takahiro Baba, Tetsuya Baba, Takahiro Ishizaki, and Takao Mori
- Journal Title
  
  Adv. Energy Mater.
  
  Volume: 12 Issue: 2 Pages: 2103191-2103191
- DOI
  10.1002/aenm.202103191
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K22486, KAKENHI-PUBLICLY-20H05188, KAKENHI-PROJECT-21H01366
[Journal Article] Investigation of Band Structure in Strained Single Crystalline Si1-xSnx2022
- Author(s)
  Sahara Keita、Yokogawa Ryo、Shibayama Yuki、Hibino Yusuke、Kurosawa Masashi、Ogura Atsushi
- Journal Title
  
  ECS Transactions
  
  Volume: 109 Issue: 4 Pages: 359-366
- DOI
  10.1149/10904.0359ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H01366
[Journal Article] Reinforcement of power factor in N-type multiphase thin film of Si1-x-yGexSny by mitigating the opposing behavior of Seebeck coefficient and electrical conductivity2021
- Author(s)
  Lai Huajun、Peng Ying、Gao Jie、Song Haili、Kurosawa Masashi、Nakatsuka Osamu、Takeuchi Tsunehiro、Miao Lei
- Journal Title
  
  Applied Physics Letters
  
  Volume: 119 Issue: 11 Pages: 113903-113903
- DOI
  10.1063/5.0062339
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-20H05188, KAKENHI-PROJECT-21H01366, KAKENHI-PROJECT-21H01628
[Journal Article] (Invited) Thermoelectric Properties of Tin-Incorporated Group-IV Thin Films2021
- Author(s)
  Kurosawa Masashi、Nakatsuka Osamu
- Journal Title
  
  ECS Transactions
  
  Volume: 104 Issue: 4 Pages: 183-189
- DOI
  10.1149/10404.0183ecst
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-20H05188, KAKENHI-PROJECT-21H01366
[Journal Article] 分子線エピタキシー法による Si1-xSnx 薄膜の形成2020
- Author(s)
  丹下龍志, 黒澤昌志, 中塚理
- Journal Title
  
  電子デバイス界面テクノロジー研究会（第25回）
  
  Volume: － Pages: 125-128
- Data Source
  KAKENHI-PROJECT-19K21971
[Journal Article] Formation of ultrathin segregated-Ge crystal on Al/Ge(111) surface2020
- Author(s)
  Kobayashi Masato、Ohta Akio、Kurosawa Masashi、Araidai Masaaki、Taoka Noriyuki、Simizu Tomohiro、Ikeda Mitsuhisa、Makihara Katsunori、Miyazaki Seiichi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: SG Pages: SGGK15-SGGK15
- DOI
  10.35848/1347-4065/ab69de
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K19020, KAKENHI-PROJECT-19H00762
[Journal Article] Evaluation of Strain-Shift Coefficients for SiSn by Raman Spectroscopy2020
- Author(s)
  Yokogawa Ryo、Kurosawa Masashi、Ogura Atsushi
- Journal Title
  
  ECS Transactions
  
  Volume: 98 Issue: 5 Pages: 291-300
- DOI
  10.1149/09805.0291ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K21971
[Journal Article] Synthesis of heavily Ga-doped Si1-xSnx/Si heterostructures and their valence-band-offset determination2019
- Author(s)
  M. Kurosawa, Y. Inaishi, R. Tange, M. Sakashita, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 58 Issue: SA Pages: SAAD02-SAAD02
- DOI
  10.7567/1347-4065/aaeb36
- NAID
  210000135207
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process2019
- Author(s)
  K. Takahashi, H. Ikenoue, M. Sakashita, O. Nakatsuka, S. Zaima, and M. Kurosawa
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 12 Issue: 5 Pages: 051016-051016
- DOI
  10.7567/1882-0786/ab1969
- NAID
  210000155747
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-26220605, KAKENHI-PROJECT-16J10846, KAKENHI-PROJECT-17H04919
[Journal Article] Crystal growth and electronic properties of germanium-tin group-IV alloy semiconductor thin films2019
- Author(s)
  中塚理、黒澤昌志
- Journal Title
  
  Oyo Buturi
  
  Volume: 88 Issue: 9 Pages: 597-603
- DOI
  10.11470/oubutsu.88.9_597
- NAID
  130007709590
- ISSN
  0369-8009, 2188-2290
- Year and Date
  2019-09-10
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K21971, KAKENHI-PROJECT-17H04919
[Journal Article] Ultra-thin germanium-tin on insulator structure through direct bonding technique2018
- Author(s)
  T. Maeda, W. H. Chang, T. Irisawa, H. Ishii, H. Oka, M. Kurosawa, Y. Imai, O. Nakatsuka and N. Uchida
- Journal Title
  
  Semiconductor Science and Technology
  
  Volume: 33 Issue: 12 Pages: 124002-124002
- DOI
  10.1088/1361-6641/aae620
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H06148, KAKENHI-PROJECT-17H04919
[Journal Article] A New Application of Ge1-xSnx: Thermoelectric Materials2018
- Author(s)
  M. Kurosawa, Y. Imai, T. Iwahashi, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima
- Journal Title
  
  ECS Trans. 2018
  
  Volume: 86 Issue: 7 Pages: 321-328
- DOI
  10.1149/08607.0321ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605, KAKENHI-PROJECT-17H04919
[Journal Article] エネルギーハーベスティング応用に向けたIV族混晶（Ge1-xSnx）薄膜の結晶成長2018
- Author(s)
  黒澤昌志
- Journal Title
  
  日本熱電学会学会誌
  
  Volume: 15 Pages: 26-31
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H04919
[Journal Article] High n-type Sb dopant activation in Ge-rich poly-Ge1-xSnx layers on SiO2 using pulsed laser annealing in flowing water2018
- Author(s)
  K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 112 Issue: 6 Pages: 062104-062104
- DOI
  10.1063/1.4997369
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605, KAKENHI-PROJECT-17H04919, KAKENHI-PROJECT-16J10846
[Journal Article] Dopant behavior in heavily doped polycrystalline Ge1-xSnx layers prepared with pulsed laser annealing in water2018
- Author(s)
  K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 57 Issue: 4S Pages: 04FJ02-04FJ02
- DOI
  10.7567/jjap.57.04fj02
- NAID
  210000148950
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605, KAKENHI-PROJECT-17H04919, KAKENHI-PROJECT-16J10846
[Journal Article] Optoelectronic properties of high-Si-content-Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructure2018
- Author(s)
  M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Semicond. Sci. Tech.
  
  Volume: 33 Issue: 12 Pages: 124018-124018
- DOI
  10.1088/1361-6641/aaebb5
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Formation and characterization of Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructures with strain-controlled Ge1-x-ySixSny layers2017
- Author(s)
  M. Fukuda, T. Yamaha, T. Asano, S. Fujinami, Y. Shimura, M. Kurosawa, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 70 Pages: 156-161
- DOI
  10.1016/j.mssp.2016.10.024
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Self-organized lattice-matched epitaxy of Si1-xSnx alloys on (001)-oriented Si, Ge, and InP substrates2017
- Author(s)
  M. Kurosawa, M. Kato, K. Takahashi, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 111 Issue: 19 Pages: 192106-192106
- DOI
  10.1063/1.4995812
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Control of Ge1-x-ySixSny layer lattice constant for energy band alignment in Ge1-xSnx/Ge1-x-ySixSny heterostructures2017
- Author(s)
  M. Fukuda, K. Watanabe, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Semicond. Sci. Tech.
  
  Volume: 32 Issue: 10 Pages: 104008-104008
- DOI
  10.1088/1361-6641/aa80ce
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Low-temperature crystallization of Ge-rich GeSn layers on Si3N4 substrate2017
- Author(s)
  I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 70 Pages: 151-155
- DOI
  10.1016/j.mssp.2016.12.038
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Growth and Applications of Si1-xSnx Thin Films2017
- Author(s)
  M. Kurosawa, O. Nakatsuka, and S. Zaima
- Journal Title
  
  ECS Trans. 2017
  
  Volume: 80 Issue: 4 Pages: 253-258
- DOI
  10.1149/08004.0253ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Ultrathin Si or Ge Films on Ag Formed by Metal-Induced Layer Exchange Method2016
- Author(s)
  黒澤昌志、大田晃生、洗平昌晃、財満鎭明
- Journal Title
  
  Hyomen Kagaku
  
  Volume: 37 Issue: 8 Pages: 374-379
- DOI
  10.1380/jsssj.37.374
- NAID
  130005405053
- ISSN
  0388-5321, 1881-4743
- Language
  Japanese
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K13943
[Journal Article] Surface-segregated Si and Ge ultrathin films formed by Ag-induced layer exchange process2016
- Author(s)
  M. Kurosawa, A. Ohta, M. Araidai, and S. Zaima
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 8S1 Pages: 08NB07-08NB07
- DOI
  10.7567/jjap.55.08nb07
- NAID
  210000146974
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K13943
[Journal Article] Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1-xSnx epitaxial layer2016
- Author(s)
  J. Jeon, T. Asano, Y. Shimura, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 Issue: 4S Pages: 04EB13-04EB13
- DOI
  10.7567/jjap.55.04eb13
- NAID
  120005898483
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26220605, KAKENHI-PROJECT-15H03565, KAKENHI-PROJECT-14J10698
[Journal Article] Density functional study for crystalline structures and electronic properties of Si1-xSnx binary alloys2016
- Author(s)
  Y. Nagae, M. Kurosawa, S. Shibayama, M. Araidai, M. Sakashita, O. Nakatsuka, K. Shiraishi, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 Issue: 8S2 Pages: 08PE04-08PE04
- DOI
  10.7567/jjap.55.08pe04
- NAID
  120005898481
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Low thermal budget n-type doping into Ge(001) surface using ultraviolet laser irradiation in phosphoric acid solution2016
- Author(s)
  K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 108 Issue: 5 Pages: 052104-052104
- DOI
  10.1063/1.4941236
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Sn系IV族半導体混晶薄膜の成長と物性評価2016
- Author(s)
  志村洋介, 竹内和歌奈, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明
- Journal Title
  
  信学技報 IEICE Technical Report
  
  Volume: 116 Pages: 447-459
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Si1-xSnx半導体のエネルギーバンド構造に関する理論的および実験的分析2016
- Author(s)
  長江祐樹, 柴山茂久, 黒澤昌志, 洗平昌晃, 中塚理, 白石賢二, 財満鎭明
- Journal Title
  
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会研究報告「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第21回）
  
  Volume: 21 Pages: 17-20
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] 界面エネルギー制御による絶縁膜上GeSn薄膜の低温結晶成長2016
- Author(s)
  吉川勲, 黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
- Journal Title
  
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会研究報告「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第21回）
  
  Volume: 21 Pages: 21-24
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Evaluation of energy band offset of Si1-xSnx semiconductors by numerical calculation using density functional theory2016
- Author(s)
  Y. Nagae, M. Kurosawa, M. Araidai, O. Nakatsuka, K. Shiraishi, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 56 Issue: 4S Pages: 04CR10-04CR10
- DOI
  10.7567/jjap.56.04cr10
- NAID
  210000147682
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Hydrogen-surfactant-mediated epitaxy of Ge1-xSnx layer and its effects on crystalline quality and photoluminescence property2016
- Author(s)
  O. Nakatsuka, S. Fujinami, T. Asano, T. Koyama, M. Kurosawa, M. Sakashita, H. Kishida, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 56 Issue: 1S Pages: 01AB05-01AB05
- DOI
  10.7567/jjap.56.01ab05
- NAID
  210000147365
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Defect and dislocation structures in low-temperature-grown Ge and Ge1-xSnx epitaxial layers on Si(110) substrates2016
- Author(s)
  S. Kidowaki, T. Asano, Y. Shimura, M. Kurosawa, N. Taoka, O. Nakatsuka, S. Zaima
- Journal Title
  
  Thin Solid Films
  
  Volume: 598 Pages: 72-81
- DOI
  10.1016/j.tsf.2015.11.048
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605, KAKENHI-PROJECT-14J10698
[Journal Article] Thermoelectric Properties of Ge-Rich GeSn Films Grown on Insulators2016
- Author(s)
  M. Kurosawa, K. Liu, M. Izawa, I. Tsunoda, and S. Zaima
- Journal Title
  
  ECS Trans.
  
  Volume: 75 Issue: 8 Pages: 481-487
- DOI
  10.1149/07508.0481ecst
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Growth and applications of GeSn-related group-IV semiconductor materials2015
- Author(s)
  S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi and M. Sakashita
- Journal Title
  
  Science and Technology of Advanced Materials
  
  Volume: 16 Issue: 4 Pages: 043502-043502
- DOI
  10.1088/1468-6996/16/4/043502
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Near-infrared light absorption by polycrystalline SiSn alloys grown on insulating layers2015
- Author(s)
  M. Kurosawa, M. Kato, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 106 Issue: 17 Pages: 171908-171908
- DOI
  10.1063/1.4919451
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] 高Sn組成SiSnの形成とバンド構造－直接遷移構造化を目指して－2015
- Author(s)
  黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
- Journal Title
  
  信学技報 IEICE Technical Report
  
  Volume: 115 Pages: 35-37
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Mobility Behavior of Polycrystalline Si1-x-yGexSny Grown on Insulators2015
- Author(s)
 T. Ohmura, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima
- Journal Title
 
 Transactions of the Materials Research Society of Japan
 
 Volume: 40 Issue: 4 Pages: 351-354
- DOI
 10.14723/tmrsj.40.351
- NAID
 130005113361
- ISSN
 1382-3469, 2188-1650
- Language
 English
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-26220605, KAKENHI-PROJECT-15J11163
[Journal Article] Epitaxial growth and crystalline properties of Ge1-x-ySixSny on Ge(001) substrates2015
- Author(s)
  T. Asano, T. Terashima, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima
- Journal Title
  
  Solid-State Electronics
  
  Volume: 110 Pages: 49-53
- DOI
  10.1016/j.sse.2015.01.006
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits2015
- Author(s)
  S. Zaima, O. Nakatsuka, T. Yamaha, T. Asano, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi, and M. Sakashita
- Journal Title
  
  ECS Trans. 2015
  
  Volume: 69 Issue: 10 Pages: 89-98
- DOI
  10.1149/06910.0089ecst
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605, KAKENHI-PROJECT-15J11163, KAKENHI-PROJECT-14J10698, KAKENHI-PROJECT-14J10705
[Journal Article] High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization2015
- Author(s)
  W. Takeuchi, N. Taoka, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 107 Issue: 2 Pages: 022103-022103
- DOI
  10.1063/1.4926507
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26870261, KAKENHI-PROJECT-26220605
[Journal Article] Characterization of locally strained Ge1-xSnx/Ge fine structures by synchrotron X-ray microdiffraction2015
- Author(s)
  S. Ike, O. Nakatsuka, Y. Moriyama, M. Kurosawa, N. Taoka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 106 Issue: 18 Pages: 182104-182104
- DOI
  10.1063/1.4921010
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605, KAKENHI-PROJECT-14J10705
[Journal Article] Growth of Si1-x-ySnxCy ternary alloy layer on Si(001) substrate and characterization of its crystalline properties2015
- Author(s)
  T. Yamaha, M. Kurosawa, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 54 Issue: 8S1 Pages: 08KA11-08KA11
- DOI
  10.7567/jjap.54.08ka11
- NAID
  210000145540
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Effect of Sn on crystallinity and electronic property of low temperature grown polycrystalline-Si1-x-yGexSny layers on SiO22015
- Author(s)
  T. Yamaha, M. Kurosawa, T. Ohmura, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Solid State Electronics
  
  Volume: 110 Pages: 54-58
- DOI
  10.1016/j.sse.2015.01.005
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J04434, KAKENHI-PROJECT-26220605
[Presentation] Potential of Silicon-Germanium-Tin Thin Films for Future Thermoelectric Device Applications2023
- Author(s)
  M. Kurosawa, S. Shibayama, M. Sakashita, and O. Nakatsuka
- Organizer
  ISPlasma2023/IC-PLANTS2023
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01366
[Presentation] 固相成長法による Si(001)基板上の伸長歪み Ge1-xSnx薄膜の形成2023
- Author(s)
  平出達磨, 大岩樹, 柴山茂久, 坂下満男, 中塚理, 黒澤昌志
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01366
[Presentation] 半絶縁性基板上Ge1-xSnx薄膜の低温熱電物性2023
- Author(s)
  今井志明, 中田壮哉, 木村公俊, 片瀬貴義, 神谷利夫, 柴山茂久, 坂下満男, 中塚理, 黒澤昌志
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01366
[Presentation] Investigating the superiority of the cavity-free architectural GeSn and Si wires-based thermoelectric generators2023
- Author(s)
  M. M. H. Mahfuz, M. Tomita, M. Kurosawa, T. Matsuki, and T. Watanabe
- Organizer
  第28回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-21H01366
[Presentation] 高濃度n型ドープSi1-xSnx薄膜で観測された巨大熱電能2023
- Author(s)
  大岩樹, 柴山茂久, 坂下満男, 中塚理, 片瀬貴義, 黒澤昌志
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01366
[Presentation] 高抵抗Si(111)基板上における多層シリカンナノシートの形成2022
- Author(s)
  伊藤善常, 柴山茂久, 坂下満男, 中塚理, 黒澤昌志
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PUBLICLY-22H05456
[Presentation] Si1－xGexバッファ上におけるSi1－xSnx薄膜の結晶成長2022
- Author(s)
  藤本一彰, 黒澤昌志, 中塚理
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PUBLICLY-20H05188
[Presentation] シリコン系マイクロ熱電発電デバイスの開発2022
- Author(s)
  渡邉孝信, 富田基裕, ハサンマフス, 黒澤昌志, 松木武雄, シルビアチュン, 王海東
- Organizer
  M&M2022 材料力学カンファレンス
- Invited
- Data Source
  KAKENHI-PROJECT-21H01366
[Presentation] 単結晶歪Si1-xSnxのバンド構造評価2022
- Author(s)
  佐原敬太, 横川凌, 柴山裕貴, 日比野祐介, 黒澤昌志, 小椋厚志
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01366
[Presentation] 14 族半導体ナノシートの結晶成長とデバイス応用2022
- Author(s)
  黒澤昌志
- Organizer
  2022年度東海NFRW・若手チャプタージョイントワークショップ
- Invited
- Data Source
  KAKENHI-PROJECT-21H01366
[Presentation] Synthesis of multilayer two-dimensional group-IV flakes and nanosheets2022
- Author(s)
  M. Kurosawa, M. Itoh, Y. Ito, K. Okada, A. Ohta, M. Araidai, K. O. Hara, Y. Ando, S. Yamada, S. Shibayama, M. Sakashita, O. Nakatsuka
- Organizer
  33rd International Photovoltaic Science and Engineering Conference (PVSEC-33)
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-22H05456
[Presentation] 14 族半導体ナノシートの結晶成長とデバイス応用2022
- Author(s)
  黒澤昌志
- Organizer
  2022年度東海NFRW・若手チャプタージョイントワークショップ
- Invited
- Data Source
  KAKENHI-PUBLICLY-22H05456
[Presentation] Study on doping by ion implantation to Si1-xSnx epitaxial layers2022
- Author(s)
  T. Oiwa, S. Shibayama, M. Sakashita, M. Kurosawa, and O. Nakatsuka
- Organizer
  International Conference on Solid State Devices and Materials 2022 (SSDM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01366
[Presentation] Investigation of Band Structure in Strained Single Crystalline Si1-xSnx2022
- Author(s)
  K. Sahara, R. Yokogawa, Y. Shibayama, Y. Hibino, M. Kurosawa, and A. Ogura
- Organizer
  242nd ECS Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01366
[Presentation] Si1－xGexバッファ上におけるSi1－xSnx薄膜の結晶成長2022
- Author(s)
  藤本一彰, 黒澤昌志, 中塚理
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01366
[Presentation] Comparative Thermoelectric Performance Demonstration Between Cavity-free GeSn and Si Thermoelectric Generators2022
- Author(s)
  M. M. H. Mahfuz, K. Katayama, Y. Ito, K. Fujimoto, M. Tomita, M. Kurosawa, T. Matsuki, and T. Watanabe
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PUBLICLY-20H05188
[Presentation] Experimental Demonstration of The Cavity-Free GeSn and Si Wire Thermoelectric Generators2022
- Author(s)
  M. M. H. Mahfuz, K. Katayama, Y. Ito, K. Fujimoto, M. Tomita, M. Kurosawa, T. Matsuki, and T. Watanabe
- Organizer
  International Conference on Solid State Devices and Materials 2022 (SSDM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01366
[Presentation] Molecular beam epitaxy of CaGe2 layers on Si(111) substrate2022
- Author(s)
  K. Okada, S. Shibayama, O. Nakatsuka, and M. Kurosawa
- Organizer
  9th International Symposium on Control of Semiconductor Interfaces (ISCSI-IX)
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-22H05456
[Presentation] Comparative Thermoelectric Performance Demonstration Between Cavity-free GeSn and Si Thermoelectric Generators2022
- Author(s)
  M. M. H. Mahfuz, K. Katayama, Y. Ito, K. Fujimoto, M. Tomita, M. Kurosawa, T. Matsuki, and T. Watanabe
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01366
[Presentation] 固相エピタキシャル成長法によるPドープSi1-xSnx薄膜の形成2022
- Author(s)
  大岩樹, 黒澤昌志, 中塚理
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01366
[Presentation] Molecular beam epitaxy of Si1－xSnx layers with 10%-Sn content on Si1－yGey buffers2022
- Author(s)
  K. Fujimoto, S. Shibayama, M. Sakashita, M. Kurosawa, and O. Nakatsuka
- Organizer
  International Conference on Solid State Devices and Materials 2022 (SSDM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01366
[Presentation] Silicon Thermoelectric Energy Harvester Compatible with CMOS Technology2022
- Author(s)
  T. Watanabe, M. Tomita, M. M. H. Mahfuz, M. Kurosawa, and T. Matsuki
- Organizer
  2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01366
[Presentation] Determination superiority of the cavity-free thermoelectric generators consisting of GeSn and Si wires2022
- Author(s)
  M. M. H. Mahfuz, M. Tomita, M. Kurosawa, T. Matsuki, and T. Watanabe
- Organizer
  Integrated Nanocomposites for Thermal and Kinetic Energy Harvesting (INTAKE) Seminar 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01366
[Presentation] Thermoelectric properties of tin-incorporated group-IV thin films2021
- Author(s)
  M. Kurosawa and O. Nakatsuka
- Organizer
  240th ECS Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01366
[Presentation] Group-IV materials grown on insulator for advanced thin-film thermoelectric applications2021
- Author(s)
  M. Kurosawa and O. Nakatsuka
- Organizer
  International Conference on Solid State Devices and Materials 2021 (SSDM2021)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01366
[Presentation] Thermoelectric properties of tin-incorporated group-IV thin films2021
- Author(s)
  M. Kurosawa and O. Nakatsuka
- Organizer
  240th ECS Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-20H05188
[Presentation] Demonstration of Cavity-free GeSn Thermoelectric Generator2021
- Author(s)
  K. Katayama, M. M. H. Mahfuz, M. Nakata, Y. Ito, K. Fujimoto, M. Tomita, M. Kurosawa, T. Matsuki, and T. Watanabe
- Organizer
  2021 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (2021 IWDTF)
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-20H05188
[Presentation] GaAs基板上におけるSi1－xSnx薄膜の結晶成長2021
- Author(s)
  藤本一彰, 黒澤昌志, 中塚理
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PUBLICLY-20H05188
[Presentation] Demonstration of Cavity-free GeSn Thermoelectric Generator2021
- Author(s)
  K. Katayama, M. M. H. Mahfuz, M. Nakata, Y. Ito, K. Fujimoto, M. Tomita, M. Kurosawa, T. Matsuki, and T. Watanabe
- Organizer
  2021 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (2021 IWDTF)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01366
[Presentation] Group-IV materials grown on insulator for advanced thin-film thermoelectric applications2021
- Author(s)
  M. Kurosawa and O. Nakatsuka
- Organizer
  International Conference on Solid State Devices and Materials 2021 (SSDM2021)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-20H05188
[Presentation] GaAs基板上におけるSi1－xSnx薄膜の結晶成長2021
- Author(s)
  藤本一彰, 黒澤昌志, 中塚理
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01366
[Presentation] Solid-phase crystallization of ultra-thin amorphous Ge layers on insulators2021
- Author(s)
  R. Oishi, M. Kurosawa, and O. Nakatsuka
- Organizer
  International Conference on Solid State Devices and Materials 2021 (SSDM2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-20H05188
[Presentation] UVラマン分光法による単結晶Si1-xSnxの歪換算係数導出2020
- Author(s)
  横川凌, 丹下龍志, 黒澤昌志, 小椋厚志
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K21971
[Presentation] 絶縁膜上における極薄Ge薄膜の固相成長2020
- Author(s)
  大石遼, 黒澤昌志, 中塚理
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PUBLICLY-20H05188
[Presentation] Ge1－xSnx細線の偏析溶融成長：冷却速度の影響2020
- Author(s)
  中尾天哉, 西嶋泰樹, 清水智, 角田功, 中塚理, 黒澤昌志
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H04919
[Presentation] GaAs(001)基板上におけるGe1－x－ySixSny薄膜のエピタキシャル成長2020
- Author(s)
  中田壮哉, 詹天卓, 富田基裕, 渡邉孝信, 中塚理, 黒澤昌志
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PUBLICLY-20H05188
[Presentation] Si(001)基板上におけるSi1－xSnx薄膜のエピタキシャル成長2020
- Author(s)
  黒澤昌志, 丹下龍志, 中塚理
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K21971
[Presentation] Ge1-xSnx溶融成長時に生じる偏析現象の理解2020
- Author(s)
  中尾天哉, 西島泰樹, 清水智, 角田功, 中塚理, 黒澤昌志
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PUBLICLY-20H05188
[Presentation] 分子線エピタキシー法による Si1-xSnx 薄膜の形成2020
- Author(s)
  丹下龍志, 黒澤昌志, 中塚理
- Organizer
  電子デバイス界面テクノロジー研究会（第25回）
- Data Source
  KAKENHI-PROJECT-19K21971
[Presentation] GaドープSi1-xSnx薄膜で観測した巨大ゼーベック熱電能の理解2020
- Author(s)
  佐藤啓, 洗平昌晃, 中塚理, 黒澤昌志
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K21971
[Presentation] 絶縁膜上における極薄Ge1－xSnx薄膜の固相成長2020
- Author(s)
  大石遼, 中塚理, 黒澤昌志
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H04919
[Presentation] 熱処理によるAl/Ge(111)上の極薄Ge層形成2019
- Author(s)
  小林征登、大田晃生、黒澤昌志、洗平昌晃、田岡紀之、池田弥央、牧原克典、宮﨑誠一
- Organizer
  電気通信情報学会(SDM) [シリコン材料・デバイス] シリコンテクノロジー分科会 6月度合同研究会
- Data Source
  KAKENHI-PROJECT-18K19020
[Presentation] 高Si組成Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny二重ヘテロ構造のエネルギーバンド構造および光電特性評価2019
- Author(s)
  福田雅大, 坂下満男, 柴山茂久, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第24回）
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] First-Principles Study on Formation of Freestanding Silicene and Germanene2019
- Author(s)
  M. Araidai, M. Kurosawa, A. Ohta, and K. Shiraishi
- Organizer
  2019 International Conference of Solid State of Device and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K19020
[Presentation] ヘテロエピタキシャルAl/Ge(111)上に偏析した極薄Geの化学分析2019
- Author(s)
  小林征登、大田晃生、黒澤昌志、洗平昌晃、田岡紀之、池田弥央、牧原克典、宮﨑誠一
- Organizer
  2019年第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K19020
[Presentation] Preparation of Ge1-xSnx-based Uni-leg Thermoelectric Generator2019
- Author(s)
  M. Kurosawa, M. Tomita, and T. Watanabe
- Organizer
  The 4th International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-4)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H04919
[Presentation] GaSb(001)基板上に形成したSi1-xSnx薄膜の結晶構造評価2019
- Author(s)
  丹下龍志, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第24回）
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Theoretical Investigation of Self-organization Behavior of Si0.5Sn0.5 Nano-particles2019
- Author(s)
  Y. Nagae, M. Kurosawa, and O. Nakatsuka
- Organizer
  International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21971
[Presentation] Temperature dependence of thermoelectric properties of Ge1－xSnx layers grown by molecular beam epitaxy2019
- Author(s)
  M. Kurosawa, M. Nakata, K. Ide, T. Katase, and T. Kamiya
- Organizer
  The 4th International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-4)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H04919
[Presentation] Growth of Hetero-epitaxial Al on Ge(111) and Segregation of Ge Crystal by Annealing2019
- Author(s)
  M. Kobayashi, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, N. Taoka, T. Shimizu, K. Makihara, and S. Miyazaki
- Organizer
  32th International Microprocesses and Nanotechnology Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K19020
[Presentation] 偏析溶融成長法により形成した絶縁膜上Ge1-xSnx細線の電気特性評価2019
- Author(s)
  中尾天哉, 西嶋泰樹, 清水智, 角田功, 中塚理, 黒澤昌志
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H04919
[Presentation] Influence of Dopant on Thermoelectric Properties of Si-rich Poly-Si1-xSnx Layers Grown on Insulators2019
- Author(s)
  K. Sato, O. Nakatsuka, and M. Kurosawa
- Organizer
  International Conference on Solid State Devices and Materials 2019 (SSDM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K21971
[Presentation] Growth of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface2019
- Author(s)
  M. Kobayashi, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, N. Taoka, T. Shimizu, K. Makihara, and S. Miyazaki
- Organizer
  2019 International Conference of Solid State of Device and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K19020
[Presentation] スマートウォッチを支える熱電デバイスについて考える2018
- Author(s)
  黒澤昌志
- Organizer
  第79回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-17H04919
[Presentation] Heavily p-type Doping to Si1-xSnx Layers Grown on SOI Substrates2018
- Author(s)
  Y. Inaishi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  10th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials/11th International Conference on Plasma-Nano Technology and Science (ISPlasma2018/IC-PLANTS2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 溶融成長法によるGe1-xSnx細線の形成と電気特性評価2018
- Author(s)
  高橋恒太, 今井祐太, 西嶋泰樹, 清水智, 黒澤昌志, 角田功, 中塚理, 財満鎭明
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] ドーパント種が水中パルスレーザアニールによるGe1-xSnx薄膜への高濃度ドーピングに及ぼす効果2018
- Author(s)
  髙橋恒太, 黒澤昌志, 池上浩, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H04919
[Presentation] Optoelectronic Characterization of Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double-Heterostructure with High-Si-Content Ge1-x-ySixSny Layer2018
- Author(s)
  M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima
- Organizer
  1st Joint Conference ICSI / ISTDM 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] IV族混晶薄膜の結晶成長と熱電デバイスへの応用2018
- Author(s)
  黒澤昌志
- Organizer
  第68回フロンティア材料研究所学術講演会「革新的エナジーハーベスティングに向けた創エネルギー材料とデバイスの研究開発」
- Invited
- Data Source
  KAKENHI-PROJECT-17H04919
[Presentation] SiO2上に形成したGe1-xSnx多結晶薄膜の熱電特性評価2018
- Author(s)
  今井志明, 高橋恒太, 中塚理, 財満鎭明, 黒澤昌志
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Growth and electronic properties of GeSn-related group-IV alloy semicondcutor thin films2018
- Author(s)
  O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima
- Organizer
  2018 International Conference on Solid State Devices and Materials (SSDM 2018)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Formation of laterally graded SixGe1-x stripes for thermoelectric generator2018
- Author(s)
  M. Nakata, K. Takahashi, T. Nishijima, S. Shimizu, I. Tsunoda, O. Nakatsuka, S. Zaima, T. Watanabe, and M. Kurosawa
- Organizer
  The 3rd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-3)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Formation and Optoelectronic Characterization of Strain-relaxed Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double-heterostructure2018
- Author(s)
  M. Fukuda, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima
- Organizer
  14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14) in conjunction with 26th International Colloquium on Scanning Probe Microscopy (ICSPM26)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator2018
- Author(s)
  K. Takahashi, H. Ikenoue, M. Sakashita, O. Nakatsuka, S. Zaima, and M. Kurosawa
- Organizer
  2018 IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H04919
[Presentation] Domain size effects on thermoelectric properties of p-type Ge0.95Sn0.05 layers grown on GaAs and Si substrates2018
- Author(s)
  Y. Imai, K. Takahashi, N. Uchida, T. Maeda, O. Nakatsuka, S. Zaima, and M. Kurosawa
- Organizer
  2018 IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H04919
[Presentation] Thin film growth and characterization of group-IV alloy semiconductors for future nanoelectronic applications2018
- Author(s)
  O. Nakatsuka, M. Kurosawa, and S. Zaima
- Organizer
  9th International Conference on Physics and Its Applications (ICOPIA)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H04919
[Presentation] Engineering electronic properties of GeSn-related group-IV thin films for nanoelectronic applications2018
- Author(s)
  O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima
- Organizer
  European Materials Research Society (2018 E-MRS Spring Meeting)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] GeSn-based thin film thermoelectric generators2018
- Author(s)
  M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  International Conference on Processing & Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications (THERMEC'2018)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H04919
[Presentation] Thin Film Growth and Characterization of Group-IV Alloy Semiconductors for Future Nanoelectronic Applications2018
- Author(s)
  O. Nakatsuka, M. Kurosawa, and S. Zaima
- Organizer
  The 9th International Conference on Physics and Its Applications (ICOPIA)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 高Si組成歪緩和Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny二重ヘテロ構造の形成および光電特性評価2018
- Author(s)
  福田雅大, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 真空蒸着によるGe(111)上のAlヘテロエピタキシャル成長2018
- Author(s)
  小林征登、大田晃生、黒澤昌志、洗平昌晃、池田弥央、牧原克典、宮﨑誠一
- Organizer
  2018年第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K19020
[Presentation] Composition and Strain Engineering of New Group-IV Thermoelectric Materials2018
- Author(s)
  M. Kurosawa, Y. Imai, T. Iwahashi, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  AiMES 2018 Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H04919
[Presentation] Ultra-thin GeSn on Insulator structure through the direct bonding technique2018
- Author(s)
  T. Maeda, W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, M. Kurosawa, Y. Imai, O. Nakatsuka, and N. Uchida
- Organizer
  1st Joint ISTDM/ICSI 2018 Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H04919
[Presentation] 多結晶Ge1-xSnx薄膜熱電素子の低温形成2018
- Author(s)
  髙橋恒太, 池上浩, 坂下満男, 中塚理, 財満鎭明, 黒澤昌志
- Organizer
  第2回フォノンエンジニアリング研究グループ研究会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Ge 2D Crystal Growth on Hetero-epitaxial Ag/Ge(111) by N2 Annealing2018
- Author(s)
  A. Ohta K. Ito, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki
- Organizer
  49th IEEE Semiconductor Interface Specialists Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K19020
[Presentation] Why chose a diffusion method towards creation of silicene & germanene2018
- Author(s)
  黒澤昌志
- Organizer
  第2回「ポストグラフェン材料のデバイス開発研究会」
- Invited
- Data Source
  KAKENHI-PROJECT-18K19020
[Presentation] Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator2018
- Author(s)
  K. Takahashi, H. Ikenoue, M. Sakashita, O. Nakatsuka, S. Zaima, and M. Kurosawa
- Organizer
  The 2nd Electron Devices Technology and Manufacturing (EDTM 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 熱電特性評価に向けた組成傾斜SixGe1-x細線の形成2018
- Author(s)
  中田壮哉, 高橋恒太, 西嶋泰樹, 清水智, 角田功, 中塚理, 財満鎭明, 渡邉孝信, 黒澤昌志
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Engineering optoelectronic properties of high-Sn-content GeSn, GeSiSn, and SiSn thin films2018
- Author(s)
  O. Nakatsuka, M. Kurosawa, M. Fukuda, M. Sakashita, W. Takeuchi, and S. Zaima
- Organizer
  IEEE Photonics Society Summer Topical Meeting Series 2018
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] エピタキシャルAl/Ge(111)の形成と真空中熱処理による表面平坦化およびGe析出2018
- Author(s)
  小林征登、大田晃生、黒澤昌志、洗平昌晃、田岡紀之、池田弥央、牧原克典、宮崎誠一
- Organizer
  応用物理学会SC東海地区学術講演会2018
- Data Source
  KAKENHI-PROJECT-18K19020
[Presentation] First-Principles Study on Hydrogen Adsorption and Desorption of Silicene and Germanene2018
- Author(s)
  M. Araidai, M. Kurosawa, A. Ohta, and K. Shiraishi
- Organizer
  14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14) in conjunction with 26th International Colloquium on Scanning Probe Microscopy (ICSPM26)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K19020
[Presentation] GaSb基板上におけるSi1-xSnx薄膜の結晶成長2018
- Author(s)
  丹下龍志, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 革新的多機能センサモジュール実現に向けた新しいIV族混晶熱電物質の創製　～ド素人が熱電の分野に飛び込んで～2018
- Author(s)
  黒澤昌志
- Organizer
  日本熱電学会第23回研究会「注目の熱電プロジェクト」
- Invited
- Data Source
  KAKENHI-PROJECT-17H04919
[Presentation] Composition and Strain Engineering of New Group-IV Thermoelectric Materials2018
- Author(s)
  M. Kurosawa, Y. Imai, T. Iwahashi, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  AiMES 2018 Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 単結晶p型Ge0.95Sn0.05薄膜の熱電特性におけるドメインサイズの効果2018
- Author(s)
  今井志明, 高橋恒太, 内田紀行, 前田辰郎, 中塚理, 財満鎭明, 黒澤昌志
- Organizer
  第2回フォノンエンジニアリング研究グループ研究会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Thermoelectric Performance of Polycrystalline Si1-x-yGexSny Ternary Alloy Layer Prepared with Ion Implantation2018
- Author(s)
  Y. Peng, M. Kurosawa, O. Nakatsuka, L. Miao, J. Gao, and S. Zaima
- Organizer
  14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14) in conjunction with 26th International Colloquium on Scanning Probe Microscopy (ICSPM26)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] GeSn-based thin film thermoelectric generators2018
- Author(s)
  M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  International Conference on Processing & Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications (THERMEC'2018)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] GeSn-related group-IV semiconductor heterostructures for electronic and optoelectronic applications2018
- Author(s)
  O. Nakatsuka, M. Fukuda, M. Kurosawa, M. Sakashita, and S. Zaima
- Organizer
  12th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 単結晶p型Ge0.95Sn0.05薄膜の熱電特性におけるドメインサイズの効果2018
- Author(s)
  今井志明, 髙橋恒太, 内田紀行, 前田辰郎, 中塚理, 財満鎭明, 黒澤昌志
- Organizer
  第2回フォノンエンジニアリング研究グループ研究会
- Data Source
  KAKENHI-PROJECT-17H04919
[Presentation] ドーパント種が水中パルスレーザアニールによるGe1-xSnx薄膜への高濃度ドーピングに及ぼす効果2018
- Author(s)
  髙橋恒太, 黒澤昌志, 池上浩, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 多結晶Ge1-xSnx薄膜熱電素子の低温形成2018
- Author(s)
  髙橋恒太, 池上浩, 坂下満男, 中塚理, 財満鎭明, 黒澤昌志
- Organizer
  第2回フォノンエンジニアリング研究グループ研究会
- Data Source
  KAKENHI-PROJECT-17H04919
[Presentation] 溶融成長法によるGe1-xSnx細線の形成と電気特性評価2018
- Author(s)
  髙橋恒太, 今井祐太, 西嶋泰樹, 清水智, 黒澤昌志, 角田功, 中塚理, 財満鎭明
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H04919
[Presentation] 次世代半導体デバイスに向けたIV族混晶薄膜の形成と物性制御2018
- Author(s)
  高橋恒太, 黒澤昌志, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第10回半導体材料・デバイスフォーラム
- Data Source
  KAKENHI-PROJECT-17H04919
[Presentation] Heterostructure Engineering of GeSn and SiGeSn Group-IV Alloy Semiconductor Layers2018
- Author(s)
  O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima
- Organizer
  11th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny二重ヘテロ構造の光電特性評価2018
- Author(s)
  福田雅大, Rainko Denis, 坂下満男, 黒澤昌志, Buca Dan, 中塚理, 財満鎭明
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Dopants behavior in polycrystallization of heavily doped Ge1-xSnx layer using pulsed laser annealing in water2017
- Author(s)
  K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  2017 International Conference on Solid State Devices and Materials (SSDM 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Development of GeSn and related semiconductor thin films for next generation optoelectronic applications2017
- Author(s)
  O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima
- Organizer
  2017 Global Conference on Polymer and Composite Materials (PCM 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Crystal growth of GeSn-based materials and its application for thin-film thermoelectric generators2017
- Author(s)
  M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  2017 Global Research Efforts on Energy and Nanomaterials (GREEN 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H04919
[Presentation] 水中パルスレーザアニールを用いた多結晶Ge1-xSnxへの高濃度ドーピング2017
- Author(s)
  高橋恒太, 黒澤昌志, 池上浩, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 熱電材料応用を目指した新しい IV 族混晶(Ge1-xSnx, Si1-xSnx)の開発2017
- Author(s)
  黒澤昌志, 中塚理, 財満鎭明
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H04919
[Presentation] Numerical calculation of energy band offset of Si1-xSnx by density functional calculation2017
- Author(s)
  Y. Nagae, M. Kurosawa, M. Araidai, O. Nakatsuka, K. Shiraishi, and S. Zaima
- Organizer
  The 2nd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-2)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 絶縁基板上におけるIV族半導体薄膜の結晶方位制御技術：二次元物質への展開2017
- Author(s)
  黒澤昌志、大田晃生、洗平昌晃、財満鎭明
- Organizer
  第3回「次世代デバイス実現に向けた先端二次元物質の物理と化学」研究会
- Place of Presentation
  科学技術交流財団研究交流センター, 愛知
- Year and Date
  2017-02-13
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] 絶縁膜上のIV族系二次元結晶に関する第一原理計算2017
- Author(s)
  洗平昌晃、黒澤昌志、大田晃生、白石賢二
- Organizer
  第3回「次世代デバイス実現に向けた先端二次元物質の物理と化学」研究会
- Place of Presentation
  科学技術交流財団研究交流センター, 愛知
- Year and Date
  2017-01-25
- Invited
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] Dopants behavior in polycrystallization of heavily doped Ge1-xSnx layer using pulsed laser annealing in water2017
- Author(s)
  K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  International Conference on Solid State Devices and Materials 2017 (SSDM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H04919
[Presentation] Impact of Thermal Annealing on Mophology and Chemical Bonding Features at Epitaxial Ag(111) Surface Grown on Ge(111)2017
- Author(s)
  K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki
- Organizer
  8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 9th International Conference on Plasma-Nano Technology & Science
- Place of Presentation
  Chubu University, Aichi
- Year and Date
  2017-03-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] Crystal growth of GeSn-based materials and its application for thin-film thermoelectric generators2017
- Author(s)
  M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  The 2017 Global Research Efforts on Energy and Nanomaterials (GREEN 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 低温MBE法により形成したp型単結晶Ge1-xSnx薄膜の熱電特性2017
- Author(s)
  今井志明, 髙橋恒太, 中塚理, 財満鎭明, 黒澤昌志
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H04919
[Presentation] Solid phase crystallization of Ge0.98Sn0.02 layers on various insulating substrates2017
- Author(s)
  I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar Atomically Controlled Processing for Ultralarge Scale Integration
- Place of Presentation
  Sendai, Japan
- Year and Date
  2017-02-13
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Heavy n- and p-type doping for polycrystalline Ge1-xSnx layers using pulsed laser annealing in water2017
- Author(s)
  K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  The 2nd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-2)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Sb-doping effect on thermal and electrical properties of Ge-rich Ge1-xSnx layers2017
- Author(s)
  T. Iwahashi, M. Kurosawa, N. Uchida, Y. Ohishi, T. Maeda, O. Nakatsuka, and S. Zaima
- Organizer
  International Conference on Solid State Devices and Materials 2017 (SSDM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H04919
[Presentation] Heavy n- and p-type doping for polycrystalline Ge1-xSnx layers using pulsed laser annealing in water2017
- Author(s)
  K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  The 2nd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-2)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H04919
[Presentation] Growth and Applications of Si1-xSnx Thin Films2017
- Author(s)
  M. Kurosawa, O. Nakatsuka, and S. Zaima
- Organizer
  232nd Electrochemical Society Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H04919
[Presentation] 新しいIV族混晶熱電材料:Ge1-xSnx2017
- Author(s)
  黒澤昌志, 今井志明, 岩橋泰正, 髙橋恒太, 中塚理, 財満鎭明
- Organizer
  第14回日本熱電学会学術講演会
- Data Source
  KAKENHI-PROJECT-17H04919
[Presentation] 水中パルスレーザアニール法により形成した高濃度ドープp型/n型多結晶Ge1-xSnx薄膜の熱電特性2017
- Author(s)
  髙橋恒太, 池上浩, 坂下満男, 中塚理, 財満鎭明, 黒澤昌志
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H04919
[Presentation] Characterization of Crystallinity and Energy Band Alignment of Ge1-xSnx/Ge1-x-ySixSny Heterostructure2017
- Author(s)
  M. Fukuda, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima
- Organizer
  International Conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 歪SOI基板上に形成したSi1-xSnx薄膜への高濃度p型ドーピング2017
- Author(s)
  稲石優, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 水中パルスレーザアニールを用いた多結晶Ge1-xSnx層中Sbの高活性化2017
- Author(s)
  高橋恒太, 黒澤昌志, 池上浩, 坂下満男, 中塚理, 財満鎭明
- Organizer
  薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」
- Place of Presentation
  東レ研修センター
- Year and Date
  2017-01-21
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 新しいIV族多元混晶薄膜の結晶成長とデバイス応用2017
- Author(s)
  黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
- Organizer
  2017年真空・表面科学合同講演会(公益社団法人日本表面科学会第37回表面科学学術講演会ならびに一般社団法人日本真空学会第58回真空に関する連合講演会)
- Invited
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Formation of heavily Sb and Ga doped poly-Ge1-xSnx layers on insulator using pulsed laser annealing in water2017
- Author(s)
  K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Ge上にエピタキシャル成長したAg(111)表面の平坦化および化学構造評価2017
- Author(s)
  伊藤公一、大田晃生、黒澤昌志、洗平昌晃、池田弥央、牧原克典、宮崎誠一
- Organizer
  2017年第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜, 神奈川
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] 混晶組成および歪制御によるGe1-xSnx/Ge1-x-ySixSnyヘテロ構造のエネルギーバンド構造制御2017
- Author(s)
  福田雅大, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 新しいIV族多元混晶薄膜の結晶成長とデバイス応用2017
- Author(s)
  黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
- Organizer
  2017年真空・表面科学合同講演会
- Invited
- Data Source
  KAKENHI-PROJECT-17H04919
[Presentation] Control of lattice constant of Ge1-x-ySixSny layer for energy band engineering in Ge1-xSnx/Ge1-x-ySixSny heterostructure2017
- Author(s)
  M. Fukuda, K. Watanabe, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima
- Organizer
  The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Geバッファ層導入によるSi(001)基板上への歪緩和Ge1-x-ySixSny層の形成2017
- Author(s)
  渡邉千皓, 福田雅大, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Characterization of energy band structure of Si1-x-ySnxCy ternary alloy layers prepared with solid-phase crystallization2017
- Author(s)
  S. Yano, O. Nakatsuka, C. Lim, M. Sakashita, M. Kurosawa, and S. Zaima
- Organizer
  29th International Conference on Defects in Semiconductors (ICDS 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] GeSn and related group-IV alloy thin films for future Si nanoelectronics2017
- Author(s)
  O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita and S. Zaima
- Organizer
  The Tenth International Conference on High-Performance Ceramics (CICC-10)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Research and development of GeSn-related thin-film semiconductors for nanoelectronic and optoelectronic applications2017
- Author(s)
  O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima
- Organizer
  Frontiers in Materials Processing Applications, Research and Technology (FiMPART 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] アモルファス絶縁膜上におけるIV族二次元結晶の電子状態2017
- Author(s)
  洗平昌晃、黒澤昌志、大田晃生、白石賢二
- Organizer
  日本物理学会第72回年次大会
- Place of Presentation
  大阪大学, 大阪
- Year and Date
  2017-03-17
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] GaドープSi1-xSnx薄膜の結晶成長と電気特性評価2017
- Author(s)
  稲石優, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Solid phase epitaxy of Si1-xSnx layers on various substrates2017
- Author(s)
  M. Kurosawa, M. Kato, K. Takahashi, O. Nakatsuka, and S. Zaima
- Organizer
  The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Chemical Analysis of Epitaxial Ag(111) Surface formed on Group-IV Semiconductors2017
- Author(s)
  K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki
- Organizer
  10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Tohoku University, Miyagi
- Year and Date
  2017-02-13
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] 水中パルスレーザアニール法により形成した高濃度ドープp型/n型多結晶Ge1-xSnx薄膜の熱電特性2017
- Author(s)
  高橋恒太, 池上浩, 坂下満男, 中塚理, 財満鎭明, 黒澤昌志
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Development of GeSn-Related Group-IV Semiconductor Thin Films for Future Si Nanoelectronic Applications2017
- Author(s)
  S. Zaima, O. Nakatsuka, M. Kurosawa, W. Takeuchi, and M. Sakashita
- Organizer
  the 4th International Symposium on Hybrid Materials and Processing (HyMaP 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Formation of GeSn layer sandwiched with strain-controlled GeSiSn layers2016
- Author(s)
  M. Fukuda, T. Yamaha, T. Asano, S. Fujinami, Y. Shimura, M. Kurosawa, O. Nakatsuka and S. Zaima
- Organizer
  9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Sendai, Japan
- Year and Date
  2016-01-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Low Temperature Crystallization of SiSn Binary Alloys2016
- Author(s)
  M. Kurosawa, M. Kato, O. Nakatsuka, and S. Zaima
- Organizer
  The 1st International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-1)
- Place of Presentation
  Osaka, Japan
- Year and Date
  2016-10-17
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Characterization of Chemical Bonding Features of Ultrathin Ge Layer Grown by Ag-Induced Layer-Exchange Method2016
- Author(s)
  A. Ohta, M. Kurosawa, M. Araidai, and S. Miyazaki
- Organizer
  8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016)
- Place of Presentation
  Nagoya, Aichi, Japan
- Year and Date
  2016-03-06
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] First-Principles Study on Germanene and Stanene on a-Alumina2016
- Author(s)
  M. Araidai, M. Kurosawa, A. Ohta, and K. Shiraishi
- Organizer
  24rd International Colloquium on Scanning Probe Microscopy
- Place of Presentation
  Hawaii Convention Center, Hawai
- Year and Date
  2016-12-14
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] Electronic States of two-dimensional crystals of group IV element on a-Al2O3(0001) surfaces2016
- Author(s)
  M. Araidai, M. Kurosawa, A. Ohta, and K. Shiraishi
- Organizer
  13th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
- Place of Presentation
  Rome, Italy
- Year and Date
  2016-10-09
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] 水中パルスレーザアニールを用いた多結晶GeSnへの高濃度n型ドーピング2016
- Author(s)
  高橋恒太, 黒澤昌志, 池上浩, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  新潟朱鷺メッセ
- Year and Date
  2016-09-06
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Development of GeSn thin film technology for electronic and optoelectronic applications2016
- Author(s)
  O. Nakatsuka, M. Kurosawa, W. Takeuchi, Y. Shimura, M. Sakashita, and S. Zaima
- Organizer
  2016 Energy Materials Nanotechnology (EMN) Summer Meeting and Photodetectors Meeting
- Place of Presentation
  Mexico
- Year and Date
  2016-06-07
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] GeSiSn/GeSn/GeSiSn積層構造の形成および結晶物性の評価2016
- Author(s)
  福田雅大, 山羽隆, 浅野孝典, 藤浪俊介, 志村洋介, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  第16回日本表面科学会中部支部学術講演会
- Place of Presentation
  名古屋大学
- Year and Date
  2016-12-17
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Si1-xSnx半導体のエネルギーバンド構造に関する理論的および実験的分析2016
- Author(s)
  長江祐樹, 柴山茂久, 黒澤昌志, 洗平昌晃, 中塚理, 白石賢二, 財満鎭明
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第21回）
- Place of Presentation
  東レ研修センター
- Year and Date
  2016-01-22
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] IV 族半導体上に蒸着したAg 薄膜の化学構造評価と反応制御2016
- Author(s)
  伊藤公一、大田晃生、黒澤昌志、洗平昌晃、池田弥央、牧原克典、宮崎誠一
- Organizer
  2016 年真空・表面科学合同講演会 (第36 回表面科学学術講演会、第57 回真空に関する連合講演会)
- Place of Presentation
  名古屋国際会議場, 愛知
- Year and Date
  2016-11-29
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] Growth of Si1-xSnx heteroepitaxial layers with very high Sn contents on InP(001) substrates2016
- Author(s)
  M. Kurosawa, M. Kato, O. Nakatsuka, and S. Zaima
- Organizer
  JSPS Meeting 2016 : Workshop on Atomically Controlled Processing for Ultra-large Scale Integration
- Place of Presentation
  Forschungszentrum Jülich, Germany
- Year and Date
  2016-11-24
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Phosphorus doping into Ge with low electrical damage by liquid immersion laser doping2016
- Author(s)
  K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima
- Organizer
  9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Sendai, Japan
- Year and Date
  2016-01-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] GeSn系IV族半導体薄膜におけるSn導入の制御と効果2016
- Author(s)
  志村洋介, 池進一, Gencarelli Federica, 竹内和歌奈, 坂下満男, 黒澤昌志, Loo Roger, 中塚理, 財満鎭明
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  新潟朱鷺メッセ
- Year and Date
  2016-09-14
- Invited
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] GeSiSn/GeSn/GeSiSn二重ヘテロ構造の結晶性に対するGeSiSn層の歪の影響2016
- Author(s)
  福田雅大, 山羽隆, 浅野孝典, 藤浪俊介, 志村洋介, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] アルミナ表面上のゲルマネンおよびスタネンの電子状態2016
- Author(s)
  洗平昌晃、黒澤昌志、大田晃生、白石賢二
- Organizer
  日本物理学会 2016年秋季大会
- Place of Presentation
  金沢大学, 石川
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] Challenges in Engineering Materials Properties for GeSn Nanoelectronics2016
- Author(s)
  S. Zaima, O. Nakatsuka, M. Kurosawa, W. Takeuchi, and M. Sakashita
- Organizer
  The 2016 European Materials Research Society (E-MRS) Fall Meeting
- Place of Presentation
  Warsaw, Poland
- Year and Date
  2016-09-19
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Formation of heavily Sb doped poly-Ge1-xSnx layer using pulsed laser annealing in water2016
- Author(s)
  K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  JSPS Meeting 2016: Workshop on Atomically Controlled Processing for Ultra-large Scale Integration
- Place of Presentation
  Forschungszentrum Jülich, Germany
- Year and Date
  2016-11-25
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Formation and Characterization of GeSiSn/GeSn/GeSiSn Double-Heterostructure with Strain-controlled GeSiSn layer2016
- Author(s)
  M. Fukuda, T. Yamaha, T. Asano, S. Fujinami, Y. Shimura, M. Kurosawa, O. Nakatsuka, and S. Zaima
- Organizer
  7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting (ISTDM 2016)
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2016-06-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 界面エネルギー制御による絶縁膜上GeSn薄膜の低温結晶成長2016
- Author(s)
  吉川勲, 黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第21回）
- Place of Presentation
  東レ研修センター
- Year and Date
  2016-01-22
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Interfacial Energy Control for Low-Temperature Crystallization of Ge-rich GeSn Layers on Insulating Substrate2016
- Author(s)
  I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting (ISTDM 2016)
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2016-06-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Heavy Sb-doping for poly-GeSn on insulator using pulsed laser annealing in water2016
- Author(s)
  K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  2016 International Conference on Solid State Devices and Materials (SSDM 2016)
- Place of Presentation
  Tsukuba, Japan
- Year and Date
  2016-09-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] SiおよびSiGe上に形成したAg表面の化学分析2016
- Author(s)
  伊藤公一、大田晃生、黒澤昌志、洗平昌晃、池田弥央、牧原克典、宮崎誠一
- Organizer
  応用物理学会SC東海地区学術講演会2016
- Place of Presentation
  名古屋大学, 愛知
- Year and Date
  2016-10-29
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] Impact of Atomic Hydrogen Irradiation on Epitaxial Growth of Ge1-xSnx and its Crystalline Property2016
- Author(s)
  S. Fujinami, T. Asano, T. Koyama, M. Kurosawa, M. Sakashita, O. Nakatsuka, H. Kishida, S. Zaima
- Organizer
  ISPlasma 2016 / IC-PLANTS 2016
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2016-03-06
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Crystalline and Electrical Properties of in-situ Sb-Doped Ge1-xSnx Epitaxial Layers2016
- Author(s)
  J. Jeon, T. Asano, Y. Shimura, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka and S. Zaima
- Organizer
  9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Sendai, Japan
- Year and Date
  2016-01-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] GeSiSn/GeSn/GeSiSn二重ヘテロ構造形成およびGeSiSn層の歪が結晶性へ与える影響2016
- Author(s)
  福田雅大, 山羽隆, 浅野孝典, 藤浪俊介, 志村洋介, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  第4回応用物理学会スチューデントチャプター東海地区学術講演会
- Place of Presentation
  名古屋大学
- Year and Date
  2016-10-29
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Growth and applications of GeSn-related group-IV semiconductor materials2016
- Author(s)
  S. Zaima, O. Nakatsuka, T. Asano, T. Yamaha, S. Ike, A. Suzuki, K. Takahashi, Y. Nagae, M. Kurosawa, W. Takeuchi, Y. Shimura, and M. Sakashita
- Organizer
  IEEE 2016 Summer Topicals Meeting Series
- Place of Presentation
  California, USA
- Year and Date
  2016-07-11
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Investigation of effects of inner stress with Sn incorporation on energy band of Si1-xSnx using density functional theory and photoelectron spectroscopy2016
- Author(s)
  Y. Nagae, M. Kurosawa, M. Araidai, O. Nakatsuka, K. Shiraishi, and S. Zaima
- Organizer
  2016 International Conference on Solid State Devices and Materials (SSDM 2016)
- Place of Presentation
  Tsukuba, Japan
- Year and Date
  2016-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Sn系IV族半導体混晶薄膜の成長と物性評価2016
- Author(s)
  志村洋介, 竹内和歌奈, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会（SDM）有機エレクトロニクス研究会（OME）共催
- Place of Presentation
  沖縄県立博物館・美術館
- Year and Date
  2016-04-08
- Invited
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 絶縁膜上にあるIV族系二次元結晶の電子状態解析2016
- Author(s)
  洗平昌晃、黒澤昌志、大田晃生、白石賢二
- Organizer
  日本物理学会第71回年次大会
- Place of Presentation
  仙台市, 宮城県
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] Si1-xSnx 価電子帯端オフセットの第一原理計算2016
- Author(s)
  長江祐樹, 黒澤昌志, 洗平昌晃, 中塚理, 白石賢二, 財満鎭明
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  新潟朱鷺メッセ
- Year and Date
  2016-09-16
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Si(001)基板上におけるSi1-xSnx薄膜の固相エピタキシャル成長2016
- Author(s)
  稲石優, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  2016年真空・表面科学合同講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2016-11-30
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] X-ray Microdiffraction Characterization of Local Strain Distribution in GeSn/Ge Nanostructures2015
- Author(s)
  S. Ike, O. Nakatsuka, Y. Moriyama, M. Kurosawa, N. Taoka, Y. Imai, S. Kimura, T. Tezuka and S. Zaima
- Organizer
  International Symposium on EcoTopia Science 2015 (ISETS '15)
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2015-11-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Development of polycrystalline Sn-related group-IV semiconductor thin films - Aiming for 3D-IC2015
- Author(s)
  M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015)
- Place of Presentation
  Jeju island, Korea
- Year and Date
  2015-06-29
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Thermophysical characterizations of Ge1-xSnx epitaxial layers aiming for thermoelectric devices2015
- Author(s)
  M. Kurosawa, M. Fukuda, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  The 9th International Conference On Silicon Epitaxy And Heterostructures (ICSI-9)
- Place of Presentation
  Montreal, Canada
- Year and Date
  2015-05-17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 密度汎関数法によるSi1-xSnx価電子帯端準位の理論予測および実験的妥当性2015
- Author(s)
  長江祐樹, 柴山茂久, 黒澤昌志, 洗平昌晃, 中塚理, 白石賢二, 財満鎭明
- Organizer
  応用物理学会SC東海地区学術講演会2015(JSAP SCTS 2015)
- Place of Presentation
  名古屋大学
- Year and Date
  2015-11-14
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] InP(001)基板上における高Sn組成Si1-xSnx層の固相エピタキシャル成長2015
- Author(s)
  加藤元太, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  第15回日本表面科学会中部支部学術講演会
- Place of Presentation
  名古屋工業大学
- Year and Date
  2015-12-19
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Si1-x-ySnxCy三元混晶薄膜のエピタキシャル成長および結晶性評価2015
- Author(s)
  山羽隆, 矢野翔太, 髙橋恒太, 黒澤昌志, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Ag誘起層交換成長法によるSi極薄膜の形成2015
- Author(s)
  黒澤昌志、大田晃生、洗平昌晃、財満鎭明
- Organizer
  第35回表面科学学術講演会
- Place of Presentation
  つくば市, 茨城県
- Year and Date
  2015-12-01
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] 絶縁膜上のIV族系二次元結晶に関する第一原理計算2015
- Author(s)
  洗平昌晃、黒澤昌志、大田晃生、白石賢二
- Organizer
  第35回表面科学学術講演会
- Place of Presentation
  仙台市, 宮城県
- Year and Date
  2015-12-01
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] Crystal Growth of GeSn-related Group-IV Thin Films for Integrating on Si Nanoelectronics Platform2015
- Author(s)
  S. Zaima, O. Nakatsuka, T. Asano, T. Yamaha, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi and M. Sakashita
- Organizer
  2015 International Conference on Solid State Devices and Materials (SSDM 2015)
- Place of Presentation
  Sapporo, Japan
- Year and Date
  2015-09-27
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Influence of in-situ Sb-Doping on Crystalline and Electrical Characteristics of n-type Ge1-xSnx Epitaxial Layer2015
- Author(s)
  J. Jeon, T. Asano, W. Takeuchi, M. Kurosawa, O. Nakatsuka and S. Zaima
- Organizer
  2015 International Conference on Solid State Devices and Materials (SSDM 2015)
- Place of Presentation
  Sapporo, Japan
- Year and Date
  2015-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Electrical Characteristics of Ge pn-junction Diodes Prepared by Using Liquid Immersion Laser Doping2015
- Author(s)
  K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Organizer
  International Symposium on EcoTopia Science 2015 (ISETS '15)
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2015-11-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Si1-xSnx薄膜の固相エピタキシャル成長に与えるSn組成の効果2015
- Author(s)
  加藤元太, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Evaluation of Energy Band Structure of Si1-xSnx by Density Functional Theory Calculation and Photoelectron Spectroscopy2015
- Author(s)
  Y. Nagae, S. Shibayama, M. Kurosawa, M. Araidai, M. Sakashita, O. Nakatsuka, K. Shiraishi, S. Zaima
- Organizer
  2015 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY - (2015 IWDTF)
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2015-11-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Crystal growth and energy band engineering of group-IV semiconductor thin films for nanoelectronic applications2015
- Author(s)
  O. Nakatsuka, M. Kurosawa, W. Takeuchi, Y. Shimura, M. Sakashita, and S. Zaima
- Organizer
  International Workshop on Advanced Nanomaterials for Future Electron Devices 2015 (IWAN 2015)
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2015-11-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Crystalline and Electrical Properties of Ge1-xSnx Epitaxial Layers with in-situ Sb-Doping2015
- Author(s)
  全智禧, 浅野孝典, 志村洋介, 竹内和歌奈, 黒澤昌志, 坂下満男, 中塚理, 財満鎭明
- Organizer
  応用物理学会SC東海地区学術講演会2015(JSAP SCTS 2015)
- Place of Presentation
  名古屋大学
- Year and Date
  2015-11-14
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Formation of Ge pn-junction diode by phosphorus doping with liquid immersion laser irradiation2015
- Author(s)
  K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, S. Zaima
- Organizer
  15th International Workshop on Junction Technology 2015 (IWJT 2015)
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2015-06-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Solid Phase Epitaxy of High Sn Content Si1-xSnx layer (x>0.2) on Ge Substrates for Optical Communication Applications2015
- Author(s)
  M. Kato, M. Kurosawa, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  The 9th International Conference On Silicon Epitaxy And Heterostructures (ICSI-9)
- Place of Presentation
  Montreal, Canada
- Year and Date
  2015-05-17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] GeSn多結晶膜の移動度に与える下地絶縁膜の効果2015
- Author(s)
  吉川勲, 黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Si and Ge Ultrathin Films by Ag-Induced Layer-Exchange Growth2015
- Author(s)
  M. Kurosawa, A. Ohta, M. Araidai, and S. Zaima
- Organizer
  23rd International Colloquium on Scanning Probe Microscopy (ICSPM23)
- Place of Presentation
  Niseko, Hokkaido, Japan
- Year and Date
  2015-12-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits2015
- Author(s)
  S. Zaima, O. Nakatsuka, T. Yamaha, T. Asano, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi, and M. Sakashita
- Organizer
  The 228th Electrochemical Society Meeting
- Place of Presentation
  Phoenix, USA
- Year and Date
  2015-10-11
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Recent Progress of Silicon Tin Alloys for Advanced Semiconductor Devices2015
- Author(s)
  M. Kurosawa, O. Nakatsuka, and S. Zaima
- Organizer
  International Workshop on Advanced Nanomaterials for Future Electron Devices 2015 (IWAN 2015)
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2015-11-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] First-principles study on two-dimensional crystals of group IV element on insulating film2015
- Author(s)
  M. Araidai, M. Kurosawa, A. Ohta, and K. Shiraishi
- Organizer
  23rd International Colloquium on Scanning Probe Microscopy (ICSPM23)
- Place of Presentation
  Niseko, Hokkaido, Japan
- Year and Date
  2015-12-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13943
[Presentation] Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny二重ヘテロ接合の形成および結晶性評価2015
- Author(s)
  福田雅大, 山羽隆, 浅野孝典, 藤浪俊介, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Calculation of Si1-xSnx Energy Band Structures by using Density Functional Theory Considering Atomic Configuration2015
- Author(s)
  Y. Nagae, M. Kurosawa, S. Shibayama, O. Nakatsuka, S. Zaima
- Organizer
  International Symposium on EcoTopia Science 2015 (ISETS '15)
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2015-11-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 高Sn組成SiSnの形成とバンド構造～直接遷移構造化を目指して～2015
- Author(s)
  黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
- Organizer
  電子情報通信学会有機エレクトロニクス研究会(OME), シリコン材料・デバイス研究会(SDM) 共催
- Place of Presentation
  大濱信泉記念館多目的ホール(沖縄)
- Year and Date
  2015-04-29
- Invited
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] リン酸溶液中レーザドーピングにより低温形成したGe pnダイオードの電気的特性2014
- Author(s)
  高橋恒太, 黒澤昌志, 池上浩, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  応用物理学会SC東海地区学術講演会2014(JSAP SCTS 2014)
- Place of Presentation
  名古屋大学
- Year and Date
  2014-11-08
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 固相エピタキシャル成長法を用いた高Sn組成SiSn層の形成2014
- Author(s)
  加藤元太, 黒澤昌志, 山羽隆, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  応用物理学会SC東海地区学術講演会2014(JSAP SCTS 2014)
- Place of Presentation
  名古屋大学
- Year and Date
  2014-11-08
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Sn/Ge界面の結晶構造およびショットキー障壁高さのGe面方位依存性2014
- Author(s)
  鈴木陽洋, Y. Deng, 柴山茂久, 黒澤昌志, 坂下満男, 中塚理, 財満鎭明
- Organizer
  応用物理学会SC東海地区学術講演会2014(JSAP SCTS 2014)
- Place of Presentation
  名古屋大学
- Year and Date
  2014-11-08
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Poly & Epitaxial Crystallization of Silicon-tin Binary Alloys for Future Optoelectronics
- Author(s)
  M. Kurosawa, M. Kato, K. Takahashi, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  16th International Conference on Thin Films (ICTF16)
- Place of Presentation
  Croatia
- Year and Date
  2014-10-13 – 2014-10-16
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Study of Local Strain Distribution in Ge1-xSnx/Ge Fine Structure by using Synchrotron X-ray
- Author(s)
  S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima
- Organizer
  JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Belgium
- Year and Date
  2014-11-13 – 2014-11-14
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 高Sn濃度SiSnの形成とバンド構造　～直接遷移構造化を目指して～
- Author(s)
  黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
- Organizer
  電子情報通信学会　有機エレクトロニクス研究会(OME), シリコン材料・デバイス研究会(SDM) 共催
- Place of Presentation
  大濱信泉記念館多目的ホール(沖縄)
- Year and Date
  2015-04-29 – 2015-04-30
- Invited
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Low Schottky barrier height contacts with Sn electrode for various orientation n-Ge substrates
- Author(s)
  A. Suzuki, D. Yunsheng, S. Shibayama, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  Advanced Metallization Conference 2014: 24th Asian Session （ADMETA Plus 2014）
- Place of Presentation
  Tokyo
- Year and Date
  2014-10-22 – 2014-10-24
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Crystal growth of Si1-xSnx alloys with high Sn contents
- Author(s)
  M. Kurosawa, M. Kato, Y. Nagae, T. Yamaha, O. Nakatsuka and S. Zaima
- Organizer
  8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Sendai
- Year and Date
  2015-01-29 – 2015-01-30
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 熱電素子応用を目指したGeSn単結晶薄膜の熱物性評価
- Author(s)
  黒澤昌志, 福田雅大, 高橋恒太, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Development of metal/Ge contacts for engineering Schottky barriers
- Author(s)
  O. Nakatsuka, Y. Deng, A. Suzuki, S. Shibayama, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, and S. Zaima
- Organizer
  JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Belgium
- Year and Date
  2014-11-13 – 2014-11-14
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] GGA+U法によるSi1-xSnx材料物性の精密予測
- Author(s)
  長江祐樹, 黒澤昌志, 加藤元太, 柴山茂久, 中塚理, 財満鎭明
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Epitaxial Growth of GeSn Layers on (001), (110), and (111) Si and Ge Substrates
- Author(s)
  O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, W. Takeuchi, and S. Zaima
- Organizer
  226th ECS Meeting and SMEQ Joint International Meeting
- Place of Presentation
  Mexico
- Year and Date
  2014-10-05 – 2014-10-09
- Invited
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Formation of strain-free Si1-x-yGexSny layers on Ge surfaces by using solid-liquid coexisting
- Author(s)
  M. Kato, M. Kurosawa, T. Yamaha, N. Taoka, O. Nakatsuka and S. Zaima
- Organizer
  8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Sendai
- Year and Date
  2015-01-29 – 2015-01-30
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] リン酸溶液中レーザドーピングにおけるGe基板面方位の効果
- Author(s)
  高橋恒太, 黒澤昌志, 池上浩, 柴山茂久, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Sn/Geコンタクトにおけるフェルミレベルピニングの軽減およびショットキー障壁高さの低減
- Author(s)
  鈴木陽洋, 柴山茂久, 黒澤昌志, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  応用物理学会薄膜・表面物理分科会、シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会 ―材料・プロセス・評価の物理―」（第20回記念研究会）
- Place of Presentation
  東レ研修センター
- Year and Date
  2015-01-30 – 2015-01-31
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] GeSn多結晶薄膜の進展〜3D-ICを目指して〜
- Author(s)
  黒澤昌志, 池上浩, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-14
- Invited
- Data Source
  KAKENHI-PROJECT-26220605

1. Ohta Akio (10553620)

# of Collaborated Projects: 3 results

# of Collaborated Products: 29 results
2. 洗平昌晃 (20537427)

# of Collaborated Projects: 3 results

# of Collaborated Products: 28 results
3. 片瀬貴義 (90648388)

# of Collaborated Projects: 2 results

# of Collaborated Products: 2 results
4. ZAIMA SHIGEAKI (70158947)

# of Collaborated Projects: 1 results

# of Collaborated Products: 136 results
5. NAKATSUKA Osamu (20334998)

# of Collaborated Projects: 1 results

# of Collaborated Products: 135 results
6. 竹中充 (20451792)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. 齋藤晃 (50292280)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 中村芳明 (60345105)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 森伸也 (70239614)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 藤田武志 (90363382)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. 澤野憲太郎 (90409376)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 安藤裕一郎 (50618361)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. 川那子高暢 (30726633)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. MAEDA Tatsuro

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
15. TAKEUCHI Wakana

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
16. MIAO Lei

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
17. 入沢寿史

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Kurosawa Masashi 黒澤 昌志

KUROSAWA Masashi 黒澤 昌志

Research Projects

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Co-Researchers

Science on group-14 nanosheetsArea Organizer

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14族ナノシートに関する総括的研究Principal Investigator

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14族ナノシートの合成Principal Investigator

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14族混晶半導体におけるフォノンドラッグエンジニアリングPrincipal Investigator

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水素吸脱着によるゲルマネンの物性変化を活用した熱スイッチ材料の創製Principal Investigator

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大気・熱安定性に優れる14族2.5次元物質の創製と熱電応用への展開Principal Investigator

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IV族混晶バンドエンジニアリングを基軸とした巨大熱電能の制御とデバイス応用Principal Investigator

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IV族混晶結晶粒界で生じる特異なキャリア・フォノン散乱の機構解明と制御Principal Investigator

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A challenge of bond engineering for the creation of direct transition silicon tinPrincipal Investigator

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Development of Si-based Dirac electron superlattice and its thermoelectric devices based on phonon and electron trapsport physics

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Self-organized Formation of Ge-based Two-dimensional Crystals and Control of Crystalline Structure and Electronic State

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Fundamental research on germanium-tin narrow wires for high-speed/low-power MOSFETsPrincipal Investigator

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Growth and Characterization of Silicon-based Two-Dimensional Materials

Principal Investigator

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Kurosawa Masashi 黒澤昌志

KUROSAWA Masashi 黒澤昌志

[Book] 「共晶系で生じる析出現象を応用したIV族系ナノシート形成技術」、ポストグラフェン材料の創製と用途開発最前線 -二次元ナノシートの物性評価、構造解析、合成、成膜プロセス技術-2020