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瀬奈 ハディ  セナ ハディ

Researcher Number 40784674
Other IDs
  • ORCIDhttps://orcid.org/0000-0002-4344-9612
Affiliation (based on the past Project Information) *help 2021: 名古屋大学, 未来材料・システム研究所, 研究員
Review Section/Research Field
Principal Investigator
Basic Section 21050:Electric and electronic materials-related
Keywords
Principal Investigator
m-plane AlGaN / m-plane GaN / 2D hole gas (2DHG) / light hole / m-plane GaN device / GaN HEMT / 窒化ガリウム(GaN)
  • Research Projects

    (1 results)
  •  m-plane GaN epitaxial growth and lattice strain enable high-speed 2D hole gas transistorPrincipal Investigator

    • Principal Investigator
      瀬奈 ハディ
    • Project Period (FY)
      2021
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 21050:Electric and electronic materials-related
    • Research Institution
      Nagoya University

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