KE MENGNAN 柯夢南

… Alternative Names

Ke Mengnan 柯夢南

Less

Researcher Number	40849402
Other IDs	https://orcid.org/0000-0001-8235-9559
Affiliation (Current)	2024: 千葉大学, 大学院工学研究院, 助教
Affiliation (based on the past Project Information) *help	2021 – 2023: 千葉大学, 大学院工学研究院, 助教 2020: 東京理科大学, 工学部電気工学科, 助教
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related Except Principal Investigator Medium-sized Section 28:Nano/micro science and related fields
Keywords	Principal Investigator トランジスタ / 半導体デバイス / MOS界面 / Ge / 信頼性 / 界面準位 / 遅い準位 / MOSFET / ゲルマニウム Except Principal Investigator ヘテロ接合 … More / ２次元物質 / 電気伝導 / 非平衡ダイナミクス / ナノ秒パルス Less

Development and understanding of vertical Ge/TMDC TFETPrincipal Investigator
- Principal Investigator
  
  柯夢南
- Project Period (FY)
  2023 – 2024
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Chiba University
Nonequilibrium carrier dynamics in two-dimensional heterostructures developed by nanosecond pulse transport analysis
- Principal Investigator
  
  青木伸之
- Project Period (FY)
  2023 – 2026
- Research Category
  
  Fund for the Promotion of Joint International Research (International Collaborative Research)
- Review Section
  
  Medium-sized Section 28:Nano/micro science and related fields
- Research Institution
  Chiba University
Study of slow trap characteristics and reduction methods of its density in Ge MOS interfaces for future devices.Principal Investigator
- Principal Investigator
  
  Ke Mengnan
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Chiba University
  Tokyo University of Science

All 2021

All Presentation

[Presentation] C-V測定によるAl2O3/GeOx/p-Ge MOS界面の電子とホールの遅い準位密度の評価2021
- Author(s)
  柯夢南, 竹中充, 高木信一
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K14779

1. 青木伸之 (60312930)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
2. 音賢一 (30263198)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

KE MENGNAN 柯夢南

Ke Mengnan 柯夢南

Research Projects

Research Products

Co-Researchers

Development and understanding of vertical Ge/TMDC TFETPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Nonequilibrium carrier dynamics in two-dimensional heterostructures developed by nanosecond pulse transport analysis

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Study of slow trap characteristics and reduction methods of its density in Ge MOS interfaces for future devices.Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Presentation] C-V測定によるAl2O3/GeOx/p-Ge MOS界面の電子とホールの遅い準位密度の評価2021

Author(s)

Organizer

Data Source

KE MENGNAN 柯 夢南

Ke Mengnan 柯 夢南

Research Projects

Research Products

Co-Researchers

Development and understanding of vertical Ge/TMDC TFETPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Nonequilibrium carrier dynamics in two-dimensional heterostructures developed by nanosecond pulse transport analysis

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Study of slow trap characteristics and reduction methods of its density in Ge MOS interfaces for future devices.Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Presentation] C-V測定によるAl2O3/GeOx/p-Ge MOS界面の電子とホールの遅い準位密度の評価2021

Author(s)

Organizer

Data Source

KE MENGNAN 柯夢南

Ke Mengnan 柯夢南