KE MENGNAN 柯夢南

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Ke Mengnan 柯夢南

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Researcher Number	40849402
Other IDs	https://orcid.org/0000-0001-8235-9559
Affiliation (Current)	2025: 横浜国立大学, 総合学術高等研究院, 准教授
Affiliation (based on the past Project Information) *help	2021 – 2023: 千葉大学, 大学院工学研究院, 助教 2020: 東京理科大学, 工学部電気工学科, 助教
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related Except Principal Investigator Medium-sized Section 28:Nano/micro science and related fields
Keywords	Principal Investigator トランジスタ / 半導体デバイス / ゲルマニウム / MOS界面 / 二次元材料 / トンネル効果 / Ge / 信頼性 / 界面準位 / 遅い準位 / MOSFET … More Except Principal Investigator … More ヘテロ接合 / ２次元物質 / 電気伝導 / 非平衡ダイナミクス / ナノ秒パルス / トンネル型電界効果トランジスタ / ファンデルワールス積層 / トランスファー技術 / バレーホール効果 / 遷移金属ダイカルコゲナイド / ナノ秒パルス伝導 Less

Development and understanding of vertical Ge/TMDC TFETPrincipal Investigator
- Principal Investigator
  
  柯夢南
- Project Period (FY)
  2023 – 2024
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Chiba University
Nonequilibrium carrier dynamics in two-dimensional heterostructures developed by nanosecond pulse transport analysis
- Principal Investigator
  
  青木伸之
- Project Period (FY)
  2023 – 2026
- Research Category
  
  Fund for the Promotion of Joint International Research (International Collaborative Research)
- Review Section
  
  Medium-sized Section 28:Nano/micro science and related fields
- Research Institution
  Chiba University
Study of slow trap characteristics and reduction methods of its density in Ge MOS interfaces for future devices.Principal Investigator
- Principal Investigator
  
  Ke Mengnan
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Chiba University
  Tokyo University of Science

All 2024 2023 2021

All Journal Article Presentation

[Journal Article] High-definition direct-print of metallic microdots with optical vortex induced forward transfer2024
- Author(s)
  Wei Rong, Kawaguchi Haruki, Sato Kaito, Kai Sayaka, Yamane Keisaku, Morita Ryuji, Yuyama Ken-ichi, Kawano Satoyuki, Miyamoto Katsuhiko, Aoki Nobuyuki, Omatsu Takashige
- Journal Title
  
  APL Photonics
  
  Volume: 9 Issue: 3 Pages: 036108-036108
- DOI
  10.1063/5.0187189
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23KK0090, KAKENHI-ORGANIZER-22H05131, KAKENHI-PLANNED-22H05138, KAKENHI-PROJECT-23H00270, KAKENHI-PROJECT-23K26566
[Journal Article] Realization of MoTe2 CMOS inverter by contact doping and channel encapsulation.2024
- Author(s)
  T. Xie, M. Ke, K. Ueno, K. Watanabe, T. Taniguchi, N. Aoki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 63
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23KK0090
[Journal Article] Enhancing optical characteristics of mediator-assisted wafer-scale MoS2 and WS2 on h-BN2023
- Author(s)
  Sheng-Kuei Chiu, Ming-Chi Li, Ji-Wei Ci, Yuan-Chih Hung, Dung-Sheng Tsai, Chien-Han Chen, Li-Hung Lin, Kenji Watanabe, Takashi Taniguchi, Nobuyuki Aoki, Ya-Ping Hsieh, Chiashain Chuang
- Journal Title
  
  Nanotechnology
  
  Volume: 34
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23KK0090
[Journal Article] Doping-Free High-Performance Photovoltaic Effect in a WSe<sub>2</sub> Lateral <i>p-n</i> Homojunction Formed by Contact Engineering2023
- Author(s)
  Le Thi Hai Yen, Ngo Tien Dat, Phan Nhat Anh Nguyen, Shin Hoseong, Uddin Inayat, Venkatesan A., Liang Chi-Te, Aoki Nobuyuki, Yoo Won Jong, Watanabe Kenji, Taniguchi Takashi, Kim Gil-Ho
- Journal Title
  
  ACS Applied Materials & Interfaces
  
  Volume: 15 Issue: 29 Pages: 35342-35349
- DOI
  10.1021/acsami.3c05451
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] 2層MoS2 /h -BN MISキャパシタでの界面準位密度の測定2024
- Author(s)
  鶴岡大樹、柯梦南、青木伸之
- Organizer
  第29回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] Development of vertical TFET using ambipolar MoTe2/Ge and MoTe2/Si heterostructures2024
- Author(s)
  Mengnan Ke, Yuga Nakamura, Koya Kudo, Xueyang Han, Nobuyuki Aoki
- Organizer
  The 66th Fullerenes-Nanotubes-Graphene General Symposium
- Data Source
  KAKENHI-PROJECT-23K13361
[Presentation] ALDの実現に向けたオゾン処理と真空アニールによる WSe2表面へのSe欠陥導入2024
- Author(s)
  小島拓也、堀場大輔、柯梦南、青木伸之
- Organizer
  第29回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] MoTe2/p-Ge、およびMoTe2/p++-Siヘテロ構造を用いた縦型TFETの研究2024
- Author(s)
  工藤晃哉、中村宥雅、青木伸之、柯夢南
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] 2層MoS2/h -BN MISキャパシタでの界面準位密度の測定2024
- Author(s)
  鶴岡大樹，青木伸之，柯夢南
- Organizer
  第29回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-23K13361
[Presentation] ALDの実現に向けたオゾン処理と真空アニールによるWSe2への表面改質の評価2024
- Author(s)
  小島拓也、堀場大輔、柯梦南、青木伸之
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] スプリットゲート構造によるバレー流の量子化現象の観測2024
- Author(s)
  高橋慶、中山祐輔、バードジョナサン、渡邊賢治、谷口尚、柯梦南、青木伸之
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] Development of vertical TFET using ambipolar MoTe2/Ge and MoTe2/Si heterostructures2024
- Author(s)
  Mengnan Ke, Yuga Nakamura, Koya Kudo, Xueyang Han, Nobuyuki Aoki
- Organizer
  The 66th Fullerenes-Nanotubes-Graphene General Symposium
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] 単層MoS2におけるバレー流の局所ゲート制御2023
- Author(s)
  高橋慶、福田和紀、渡邊賢治、谷口尚、柯夢南、青木伸之
- Organizer
  2023年第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] 2層MoS2 MISキャパシタでのコンダクタンス法による界面準位密度の測定と評価2023
- Author(s)
  鶴岡大樹，青木伸之，柯夢南
- Organizer
  EEE Transdisciplinary-Oriented Workshop for Emerging Researchers 2023
- Data Source
  KAKENHI-PROJECT-23K13361
[Presentation] h-BN層の挿入によるSiO2/h-BN/MoS2 n-FETのId-Vg ヒステリシスの制御2023
- Author(s)
  柯夢南，馮家泉，鶴岡大樹，謝天順，青木伸之
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K13361
[Presentation] Study on vertical TFET with MoTe2/p-Ge and MoTe2/p ++ -Si hetero structure2023
- Author(s)
  工藤晃哉，中村宥雅，青木伸之，柯夢南
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K13361
[Presentation] h-BN層の挿入によるSiO2/h-BN/MoS2 n-FETのId-Vg ヒステリシスの制御2023
- Author(s)
  柯夢南、馮家泉、鶴岡大樹、謝天順、青木伸之
- Organizer
  2023年第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] Realization of vertical n- and p- TFET with ambipolar MoTe2 using MoTe2/p-Ge and MoTe2/n-Si heterostructures2023
- Author(s)
  Y. Nakamura, X. Han , N. Aoki and M. Ke
- Organizer
  36th International Microprocesses and Nanotechnology Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K13361
[Presentation] 2層 MoS2 MIS キャパシタでのコンダクタンス法による界面準位密度の測定と評価2023
- Author(s)
  鶴岡大樹、柯梦南、青木伸之
- Organizer
  The 20th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] High-performance CMOS inverter based on MoTe2-FETsachieved by contact doping and channel encapsulation2023
- Author(s)
  Tianshun Xie, Mengnan Ke, Nobuyuki Aoki
- Organizer
  2023 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] Charge Transfer Doping for P-Type 2D-FETs by Self Assembled Organic Monolayer Deposition and Use as Seed Layer in ALD Process2023
- Author(s)
  Daisuke Horiba, Takuya Kojima, Kohei Sakanashi, Mengnan Ke and Nobuyuki Aoki
- Organizer
  International Microprocesses and Nanotechnology Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] Realization of vertical n- and p- TFET with ambipolar MoTe2 using MoTe2/p-Ge and MoTe2/n-Si heterostructures2023
- Author(s)
  Yuga Nakamura, Xueyang Han, Nobuyuki Aoki and Mengnan Ke
- Organizer
  36th International Microprocesses and Nanotechnology Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] ALDに向けた有機／無機アクセプター成膜によるWSe2-FETへの電荷移動ドーピングの評価2023
- Author(s)
  堀場大輔、坂梨昂平、柯梦南、青木伸之
- Organizer
  2023年第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] C-V測定によるAl2O3/GeOx/p-Ge MOS界面の電子とホールの遅い準位密度の評価2021
- Author(s)
  柯夢南, 竹中充, 高木信一
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K14779

1. 青木伸之 (60312930)

# of Collaborated Projects: 1 results

# of Collaborated Products: 17 results
2. 音賢一 (30263198)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results

KE MENGNAN 柯 夢南

Ke Mengnan 柯 夢南

Research Projects

Research Products

Co-Researchers

Development and understanding of vertical Ge/TMDC TFETPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Nonequilibrium carrier dynamics in two-dimensional heterostructures developed by nanosecond pulse transport analysis

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Study of slow trap characteristics and reduction methods of its density in Ge MOS interfaces for future devices.Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Journal Article] High-definition direct-print of metallic microdots with optical vortex induced forward transfer2024

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Realization of MoTe2 CMOS inverter by contact doping and channel encapsulation.2024

Author(s)

Journal Title

Data Source

[Journal Article] Enhancing optical characteristics of mediator-assisted wafer-scale MoS2 and WS2 on h-BN2023

Author(s)

Journal Title

Data Source

[Journal Article] Doping-Free High-Performance Photovoltaic Effect in a WSe<sub>2</sub> Lateral <i>p-n</i> Homojunction Formed by Contact Engineering2023

Author(s)

Journal Title

DOI

Data Source

[Presentation] 2層MoS2 /h -BN MISキャパシタでの界面準位密度の測定2024

Author(s)

Organizer

Data Source

[Presentation] Development of vertical TFET using ambipolar MoTe2/Ge and MoTe2/Si heterostructures2024

Author(s)

Organizer

Data Source

[Presentation] ALDの実現に向けたオゾン処理と真空アニールによる WSe2表面へのSe欠陥導入2024

Author(s)

Organizer

Data Source

[Presentation] MoTe2/p-Ge、およびMoTe2/p++-Siヘテロ構造を用いた縦型TFETの研究2024

Author(s)

Organizer

Data Source

[Presentation] 2層MoS2/h -BN MISキャパシタでの界面準位密度の測定2024

Author(s)

Organizer

Data Source

[Presentation] ALDの実現に向けたオゾン処理と真空アニールによるWSe2への表面改質の評価2024

Author(s)

Organizer

Data Source

[Presentation] スプリットゲート構造によるバレー流の量子化現象の観測2024

Author(s)

Organizer

Data Source

[Presentation] Development of vertical TFET using ambipolar MoTe2/Ge and MoTe2/Si heterostructures2024

Author(s)

Organizer

Data Source

[Presentation] 単層MoS2におけるバレー流の局所ゲート制御2023

Author(s)

Organizer

Data Source

[Presentation] 2層MoS2 MISキャパシタでのコンダクタンス法による界面準位密度の測定と評価2023

Author(s)

Organizer

KE MENGNAN 柯夢南

Ke Mengnan 柯夢南