KE MENGNAN 柯夢南

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Ke Mengnan 柯夢南

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Researcher Number	40849402
Other IDs	https://orcid.org/0000-0001-8235-9559
Affiliation (Current)	2026: 横浜国立大学, 総合学術高等研究院, 准教授
Affiliation (based on the past Project Information) *help	2024: 横浜国立大学, 総合学術高等研究院, 准教授 2021 – 2024: 千葉大学, 大学院工学研究院, 助教 2020: 東京理科大学, 工学部電気工学科, 助教
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related Except Principal Investigator Medium-sized Section 28:Nano/micro science and related fields
Keywords	Principal Investigator トランジスタ / 半導体デバイス / ゲルマニウム / MOS界面 / 二次元材料 / トンネル効果 / Ge / 信頼性 / 界面トラップ / 電界効果トランジスタ … More / CMOS / 界面準位 / 遅い準位 / MOSFET … More Except Principal Investigator ヘテロ接合 / ２次元物質 / 電気伝導 / 非平衡ダイナミクス / ナノ秒パルス / トンネル型電界効果トランジスタ / ファンデルワールス積層 / トランスファー技術 / 遷移金属ダイカルコゲナイド / バレーホール効果 / 新奇電子デバイス / ２次元半導体物質 / 非平衡キャリア / ナノ秒パルス伝導 Less

Development and understanding of vertical Ge/TMDC TFETPrincipal Investigator
- Principal Investigator
  
  柯夢南
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Yokohama National University
  Chiba University
Nonequilibrium carrier dynamics in two-dimensional heterostructures developed by nanosecond pulse transport analysis
- Principal Investigator
  
  青木伸之
- Project Period (FY)
  2023 – 2026
- Research Category
  
  Fund for the Promotion of Joint International Research (International Collaborative Research)
- Review Section
  
  Medium-sized Section 28:Nano/micro science and related fields
- Research Institution
  Chiba University
Study of slow trap characteristics and reduction methods of its density in Ge MOS interfaces for future devices.Principal Investigator
- Principal Investigator
  
  Ke Mengnan
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Chiba University
  Tokyo University of Science

All 2025 2024 2023 2021

All Journal Article Presentation

[Journal Article] Effect of capping on the Dirac semimetal Cd3As2 on Si grown via molecular beam epitaxy2025
- Author(s)
  Lin Wei-Chen、Chuang Chiashain、Kuo Chun-Wei、Wu Meng-Ting、Lee Jie-Ying、Lee Hsin-Hsuan、Yang Cheng-Hsueh、Ci Ji-Wei、Xie Tian-Shun、Watanabe Kenji、Taniguchi Takashi、Aoki Nobuyuki、Wang Jyh-Shyang、Liang Chi-Te
- Journal Title
  
  Nanotechnology
  
  Volume: 36 Issue: 16 Pages: 165001-165001
- DOI
  10.1088/1361-6528/adbb74
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0090
[Journal Article] High-definition direct-print of metallic microdots with optical vortex induced forward transfer2024
- Author(s)
  Wei Rong, Kawaguchi Haruki, Sato Kaito, Kai Sayaka, Yamane Keisaku, Morita Ryuji, Yuyama Ken-ichi, Kawano Satoyuki, Miyamoto Katsuhiko, Aoki Nobuyuki, Omatsu Takashige
- Journal Title
  
  APL Photonics
  
  Volume: 9 Issue: 3 Pages: 036108-036108
- DOI
  10.1063/5.0187189
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23KK0090, KAKENHI-ORGANIZER-22H05131, KAKENHI-PLANNED-22H05138, KAKENHI-PROJECT-23H00270, KAKENHI-PROJECT-23K26566
[Journal Article] Machine learning methods for background potential estimation in 2DEGs2024
- Author(s)
  da Cunha Carlo、Aoki Nobuyuki、Ferry K. David、Vora Kevin、Zhang Yu
- Journal Title
  
  Physica E: Low-dimensional Systems and Nanostructures
  
  Volume: 162 Pages: 115987-115987
- DOI
  10.1016/j.physe.2024.115987
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0090
[Journal Article] Exploring Electrostatic Confinement Transport in MoS2/WSe2 Heterostructure via Triple‐Gated Point Contact Device2024
- Author(s)
  Phan Nhat Anh Nguyen、Uddin Inayat、Le Thi Hai Yen、Aoki Nobuyuki、Kim Hye Jung、Watanabe Kenji、Taniguchi Takashi、Kim Gil‐Ho
- Journal Title
  
  Advanced Materials Technologies
  
  Volume: 9 Issue: 12
- DOI
  10.1002/admt.202302200
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0090
[Journal Article] Realization of MoTe2 CMOS inverter by contact doping and channel encapsulation.2024
- Author(s)
  T. Xie, M. Ke, K. Ueno, K. Watanabe, T. Taniguchi, N. Aoki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 63
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23KK0090
[Journal Article] Contact Properties on a Semiconducting MoTe2 Crystal Using Polymorphic Structures2024
- Author(s)
  Xie Tianshun、Ke Mengnan、Kruger Peter、Ueno Keiji、Aoki Nobuyuki
- Journal Title
  
  ACS Applied Electronic Materials
  
  Volume: 6 Issue: 9 Pages: 7026-7034
- DOI
  10.1021/acsaelm.4c01369
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K13361, KAKENHI-PROJECT-23KK0090
[Journal Article] Realization of single MoTe2 crystal in-plane TFET by laser-induced doping technique2024
- Author(s)
  Xie Tianshun、Ke Mengnan、Ueno Keiji、Watanabe Kenji、Taniguchi Takashi、Aoki Nobuyuki
- Journal Title
  
  Applied Physics Letters
  
  Volume: 124 Issue: 21 Pages: 2119041-5
- DOI
  10.1063/5.0197172
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K13361, KAKENHI-PROJECT-23KK0090
[Journal Article] Enhancing optical characteristics of mediator-assisted wafer-scale MoS2 and WS2 on h-BN2023
- Author(s)
  Sheng-Kuei Chiu, Ming-Chi Li, Ji-Wei Ci, Yuan-Chih Hung, Dung-Sheng Tsai, Chien-Han Chen, Li-Hung Lin, Kenji Watanabe, Takashi Taniguchi, Nobuyuki Aoki, Ya-Ping Hsieh, Chiashain Chuang
- Journal Title
  
  Nanotechnology
  
  Volume: 34
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23KK0090
[Journal Article] Doping-Free High-Performance Photovoltaic Effect in a WSe<sub>2</sub> Lateral <i>p-n</i> Homojunction Formed by Contact Engineering2023
- Author(s)
  Le Thi Hai Yen, Ngo Tien Dat, Phan Nhat Anh Nguyen, Shin Hoseong, Uddin Inayat, Venkatesan A., Liang Chi-Te, Aoki Nobuyuki, Yoo Won Jong, Watanabe Kenji, Taniguchi Takashi, Kim Gil-Ho
- Journal Title
  
  ACS Applied Materials & Interfaces
  
  Volume: 15 Issue: 29 Pages: 35342-35349
- DOI
  10.1021/acsami.3c05451
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] Study of Al2O3/Ge MOS interfaces utilizing O3 pre-oxidation and post-oxidation2025
- Author(s)
  高橋大輝，Xiao Yu, 青木伸之, 柯夢南
- Organizer
  第30回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-23K13361
[Presentation] Establishment of Water Transfer Method for CVD Crystals and Residue Evaluation2025
- Author(s)
  Yusuke Nakamura, Yusuke Nakayama, Kensyo Matsuda, Yuto Noguchi, Naohiko Endo, Yasumitsu Miyata, Mengnan Ke, Nobuyuki Aoki
- Organizer
  The 68th Fullerenes-Nanotubes-Graphene General Symposium
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] Quantization of Valley Current via Spit Gate Structure2025
- Author(s)
  Yusuke Nakayama, Kei Takahashi, Yusuke Nakamura, Mengnan Ke, David K. Ferry, Jonathan P. Bird, Nobuyuki Aoki
- Organizer
  The 68th Fullerenes-Nanotubes-Graphene General Symposium
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] オゾンを用いたプリ酸化及びポスト酸化によるA12O3/Ge MOS界面の研究2025
- Author(s)
  髙橋大輝，Xiao Yu, 青木伸之，柯梦南
- Organizer
  第30回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] F6-TCNNQ単分子層成膜によるWSe2上へのALD成膜評価2025
- Author(s)
  松田健生, 小島拓也, 野口裕士, 柯梦南, 熊谷翔平, 岡本敏宏, 青木伸之
- Organizer
  第30回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] CVD単層MoS2を用いたMISキャパシタにおけるCV特性評価2025
- Author(s)
  中村志穂，鶴岡大樹，遠藤尚彦, 宮田耕充, 青木伸之，柯梦南
- Organizer
  第30回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] WSe2上のALD実現に向けたUV-O3暴露と真空アニールによる最表面へのSe欠陥導入2025
- Author(s)
  小島拓也, 堀場大輔, 松田健生, 柯梦南, 青木伸之
- Organizer
  第30回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] WSe2上へのF6-TCNNQ単層膜を介した原子層堆積法の確立とデュアルゲート型FET動作の実現2025
- Author(s)
  松田健生, 小島拓也, 野口裕士, 柯梦南, 熊谷翔平, 岡本敏宏, 青木伸之
- Organizer
  2025年第72回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] 一次元チャネルを通るバレー流の量子化現象：再現性と普遍性の確認2025
- Author(s)
  中山祐輔, 高橋慶, 中村優友, 柯梦南, 渡邊賢司, 谷口尚, ジョナサンバード, デイビットフェリー, 青木伸之
- Organizer
  2025年第72回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] 極薄ゲート金属層利用に向けたグラフェン上へのALDによるアルミナ膜形成2025
- Author(s)
  野口裕士, 松田健生, 小島拓也, 柯梦南, 熊谷翔平, 岡敏宏, 青木伸之
- Organizer
  2025年第72回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] Analysis of Capacitance-voltage Characteristics in MIS Capacitors Using CVD Monolayer MoS22025
- Author(s)
  中村志穂，鶴岡大樹，遠藤尚彦, 宮田耕充, 青木伸之, 柯夢南
- Organizer
  第30回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-23K13361
[Presentation] WSe2上におけるF6-TCNNQ単分子層形成評価2024
- Author(s)
  松田健生, 小島拓也, 野口裕士, 柯梦南, 熊谷翔平, 岡本敏宏, 青木伸之
- Organizer
  2024年第85回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] Long Range Transfer and Temperature Dependence of Valley Hall Effect in MoS2 Narrow Hall Bar2024
- Author(s)
  Y. Nakayama, K. Takahashi, M. Ke, D. K. Ferry, J. P. Bird, N. Aoki
- Organizer
  International School and Symposium on Nanodevices and quanTum Technologies
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] 2層MoS2 /h -BN MISキャパシタでの界面準位密度の測定2024
- Author(s)
  鶴岡大樹、柯梦南、青木伸之
- Organizer
  第29回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] LD実現に向けたUV-O3暴露と真空アニールによる最表面へのSe欠陥導入2024
- Author(s)
  小島拓也, 堀場大輔, 柯梦南, 青木伸之
- Organizer
  2024年第85回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] Ge MOSFET実用化への信頼性課題と期待2024
- Author(s)
  柯夢南
- Organizer
  東京都市大学２２５回総研セミナー
- Invited
- Data Source
  KAKENHI-PROJECT-23K13361
[Presentation] Analysis of Interface Properties in Few-Layer MoS2 Edge Capacitors Using the Conductance Method2024
- Author(s)
  D. Tsuruoka, Z. Lin, T. Endo, Y. Miyata, N. Aoki and M. Ke
- Organizer
  37th International Microprocesses and Nanotechnology Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K13361
[Presentation] One Dimensional Control of Valley Current via Split Gate Structure2024
- Author(s)
  K. Takahashi, Y. Nakayama, M. Ke, D. K. Ferry, J. P. Bird, N. Aoki
- Organizer
  International School and Symposium on Nanodevices and quanTum Technologies
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] Development of vertical TFET using ambipolar MoTe2/Ge and MoTe2/Si heterostructures2024
- Author(s)
  Mengnan Ke, Yuga Nakamura, Koya Kudo, Xueyang Han, Nobuyuki Aoki
- Organizer
  The 66th Fullerenes-Nanotubes-Graphene General Symposium
- Data Source
  KAKENHI-PROJECT-23K13361
[Presentation] ALDの実現に向けたオゾン処理と真空アニールによる WSe2表面へのSe欠陥導入2024
- Author(s)
  小島拓也、堀場大輔、柯梦南、青木伸之
- Organizer
  第29回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] Deposition of Organic Monolayer Film on TMDC-FET for Doping and Atomic Layer Deposition2024
- Author(s)
  Kensho Matsuda, Daisuke Horiba, Takuya Kojima, Kohei Sakanashi, Mengnan Ke, Shohei Kumagai, Toshihiro Okamoto, Nobuyuki Aoki
- Organizer
  6th International Conference on the Physics of Semiconductors (ICPS) 2024
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] MoTe2/p-Ge、およびMoTe2/p++-Siヘテロ構造を用いた縦型TFETの研究2024
- Author(s)
  工藤晃哉、中村宥雅、青木伸之、柯夢南
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] オゾン酸化によるAl2O3/Ge MOS界面についての研究2024
- Author(s)
  高橋大輝，青木伸之, 柯夢南
- Organizer
  第85回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K13361
[Presentation] CVD-monolayer MoS2 MISキャパシタにおける接触電極の形状依存性2024
- Author(s)
  鶴岡大樹、遠藤尚彦、宮田耕充，青木伸之, 柯夢南
- Organizer
  第85回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K13361
[Presentation] Charge Transport in Split-gated Point Contact based on MoS2/WSe2 Heterostructure2024
- Author(s)
  Nguyen Nhat Anh Phan, Inayat Uddin, Hai Yen Le Thi, Nobuyuki Aoki, Kenji Watanabe, Takashi Taniguchi, Gil-Ho Kim
- Organizer
  6th International Conference on the Physics of Semiconductors (ICPS) 2024
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] 2層MoS2/h -BN MISキャパシタでの界面準位密度の測定2024
- Author(s)
  鶴岡大樹，青木伸之，柯夢南
- Organizer
  第29回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-23K13361
[Presentation] 単層MoS2におけるバレーホール効果の観測とスプリットゲート制御2024
- Author(s)
  高橋慶, 中山祐輔, 柯夢南, D.K. Ferry, J.P. Bird, 青木伸之
- Organizer
  日本物理学会第79回年次大会
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] Propagation and Quantization of Valley Current through One Dimensional Channel2024
- Author(s)
  Kei Takahashi, Yusuke Nakayama, David K. Ferry, Jonathan P. Bird, Nobuyuki Aoki
- Organizer
  6th International Conference on the Physics of Semiconductors (ICPS) 2024
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] ALDの実現に向けたオゾン処理と真空アニールによるWSe2への表面改質の評価2024
- Author(s)
  小島拓也、堀場大輔、柯梦南、青木伸之
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] CVD-monolayer MoS2 MISキャパシタにおける接触電極の形状依存性2024
- Author(s)
  鶴岡大樹, 遠藤尚彦, 宮田耕充, 青木伸之, 柯梦南
- Organizer
  2024年第85回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] スプリットゲート構造によるバレー流の量子化現象の観測2024
- Author(s)
  高橋慶、中山祐輔、バードジョナサン、渡邊賢治、谷口尚、柯梦南、青木伸之
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] Development of vertical TFET using ambipolar MoTe2/Ge and MoTe2/Si heterostructures2024
- Author(s)
  Mengnan Ke, Yuga Nakamura, Koya Kudo, Xueyang Han, Nobuyuki Aoki
- Organizer
  The 66th Fullerenes-Nanotubes-Graphene General Symposium
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] オゾン酸化によるAl2O3/Ge MOS界面についての研究2024
- Author(s)
  高橋大輝, 青木伸之, 柯梦南
- Organizer
  2024年第85回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] 単層MoS2におけるバレー流の局所ゲート制御2023
- Author(s)
  高橋慶、福田和紀、渡邊賢治、谷口尚、柯夢南、青木伸之
- Organizer
  2023年第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] プラズマ酸化によるn-Ge ゲートスタックにおける遅い準位の特性2023
- Author(s)
  柯夢南, 李宗恩, トープラサートポンカシディット, 竹中充, 高木信一
- Organizer
  第28回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-20K14779
[Presentation] 2層MoS2 MISキャパシタでのコンダクタンス法による界面準位密度の測定と評価2023
- Author(s)
  鶴岡大樹，青木伸之，柯夢南
- Organizer
  EEE Transdisciplinary-Oriented Workshop for Emerging Researchers 2023
- Data Source
  KAKENHI-PROJECT-23K13361
[Presentation] h-BN層の挿入によるSiO2/h-BN/MoS2 n-FETのId-Vg ヒステリシスの制御2023
- Author(s)
  柯夢南，馮家泉，鶴岡大樹，謝天順，青木伸之
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K13361
[Presentation] Study on vertical TFET with MoTe2/p-Ge and MoTe2/p ++ -Si hetero structure2023
- Author(s)
  工藤晃哉，中村宥雅，青木伸之，柯夢南
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K13361
[Presentation] h-BN層の挿入によるSiO2/h-BN/MoS2 n-FETのId-Vg ヒステリシスの制御2023
- Author(s)
  柯夢南、馮家泉、鶴岡大樹、謝天順、青木伸之
- Organizer
  2023年第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] Realization of vertical n- and p- TFET with ambipolar MoTe2 using MoTe2/p-Ge and MoTe2/n-Si heterostructures2023
- Author(s)
  Y. Nakamura, X. Han , N. Aoki and M. Ke
- Organizer
  36th International Microprocesses and Nanotechnology Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K13361
[Presentation] 高電界におけるAl2O3/GeOx/Ge nMOS界面中の異なるトラップの分離2023
- Author(s)
  柯夢南, 李宗恩, トープラサートポンカシディット, 竹中充, 高木信一
- Organizer
  第28回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-20K14779
[Presentation] 2層 MoS2 MIS キャパシタでのコンダクタンス法による界面準位密度の測定と評価2023
- Author(s)
  鶴岡大樹、柯梦南、青木伸之
- Organizer
  The 20th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] High-performance CMOS inverter based on MoTe2-FETsachieved by contact doping and channel encapsulation2023
- Author(s)
  Tianshun Xie, Mengnan Ke, Nobuyuki Aoki
- Organizer
  2023 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] Charge Transfer Doping for P-Type 2D-FETs by Self Assembled Organic Monolayer Deposition and Use as Seed Layer in ALD Process2023
- Author(s)
  Daisuke Horiba, Takuya Kojima, Kohei Sakanashi, Mengnan Ke and Nobuyuki Aoki
- Organizer
  International Microprocesses and Nanotechnology Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] Realization of vertical n- and p- TFET with ambipolar MoTe2 using MoTe2/p-Ge and MoTe2/n-Si heterostructures2023
- Author(s)
  Yuga Nakamura, Xueyang Han, Nobuyuki Aoki and Mengnan Ke
- Organizer
  36th International Microprocesses and Nanotechnology Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] ALDに向けた有機／無機アクセプター成膜によるWSe2-FETへの電荷移動ドーピングの評価2023
- Author(s)
  堀場大輔、坂梨昂平、柯梦南、青木伸之
- Organizer
  2023年第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23KK0090
[Presentation] C-V測定によるAl2O3/GeOx/p-Ge MOS界面の電子とホールの遅い準位密度の評価2021
- Author(s)
  柯夢南, 竹中充, 高木信一
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K14779

1. 青木伸之 (60312930)

# of Collaborated Projects: 1 results

# of Collaborated Products: 39 results
2. 音賢一 (30263198)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
3. 川嶋大介 (10813785)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

KE MENGNAN 柯 夢南

Ke Mengnan 柯 夢南

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Development and understanding of vertical Ge/TMDC TFETPrincipal Investigator

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Nonequilibrium carrier dynamics in two-dimensional heterostructures developed by nanosecond pulse transport analysis

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Study of slow trap characteristics and reduction methods of its density in Ge MOS interfaces for future devices.Principal Investigator

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[Journal Article] Effect of capping on the Dirac semimetal Cd3As2 on Si grown via molecular beam epitaxy2025

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[Journal Article] High-definition direct-print of metallic microdots with optical vortex induced forward transfer2024

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[Journal Article] Machine learning methods for background potential estimation in 2DEGs2024

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[Journal Article] Exploring Electrostatic Confinement Transport in MoS2/WSe2 Heterostructure via Triple‐Gated Point Contact Device2024

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[Journal Article] Realization of MoTe2 CMOS inverter by contact doping and channel encapsulation.2024

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[Journal Article] Contact Properties on a Semiconducting MoTe2 Crystal Using Polymorphic Structures2024

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[Journal Article] Realization of single MoTe2 crystal in-plane TFET by laser-induced doping technique2024

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[Journal Article] Enhancing optical characteristics of mediator-assisted wafer-scale MoS2 and WS2 on h-BN2023

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[Journal Article] Doping-Free High-Performance Photovoltaic Effect in a WSe<sub>2</sub> Lateral <i>p-n</i> Homojunction Formed by Contact Engineering2023

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[Presentation] Study of Al2O3/Ge MOS interfaces utilizing O3 pre-oxidation and post-oxidation2025

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[Presentation] Establishment of Water Transfer Method for CVD Crystals and Residue Evaluation2025

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[Presentation] Quantization of Valley Current via Spit Gate Structure2025

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[Presentation] オゾンを用いたプリ酸化及びポスト酸化によるA12O3/Ge MOS界面の研究2025

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KE MENGNAN 柯夢南

Ke Mengnan 柯夢南