KAZUSADA Shigaki 紫垣一貞

… Alternative Names

柴垣一貞シガキカズサダ

紫垣一貞シガキカズサダ

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Researcher Number	50044722
Other IDs
Affiliation (based on the past Project Information) *help	2007: Kumamoto National College of Technology, Department of Electronics Engineering, Associated Professor 2005 – 2006: 熊本電波工業高等専門学校, 電子工学科, 助教授 2004: Kumamoto National College of Technology, Department of Electronic Engineering, Associate Professor, 電子工学科, 助教授 2004: 独立行政法人国立高等専門学校機構熊本電波工業高等専門学校, 電子工学科, 助教授 2002 – 2003: 熊本電波工業高等専門学校, 電子工学科, 助教授 1999 – 2001: 熊本電波工業高等専門学校, 情報通信工学科, 助教授
Review Section/Research Field	Principal Investigator Engineering fundamentals / Physical properties of metals / Structural/Functional materials Except Principal Investigator Inorganic materials/Physical properties
Keywords	Principal Investigator 格子欠陥 / 照射損傷 / 半導体デバイス / Recovery by annealing / Induced lattice defects / Degradation / Electron / High energy particle / Radiation damage / 回復 … More / 熱処理 / 劣化 / 宇宙空間 / 高エネルギー粒子 / recovery / induced lattice defect / SOI transisor / SiC transistor / proton / electron / radiation damage / MOSFET / 歪Si / GaN LED / 高温照射 / 電子線 / 陽子線 / SiGe / 特性劣化 / 宇宙環境 / 放射線 / SOI MOS / InGaAs photodiode / 高工ネルギー粒子 / AlGaAs HEMT / InGaAs HEMT / InGaAsデバイス … More Except Principal Investigator SiGe / MOSFET / radiation damage / proton / SiC / 高温照射 / 電子線 / 歪Si / 照射損傷 / 陽子線 Less

Radiation damage mechanism of advanced semiconductor materials and devicesPrincipal Investigator
- Principal Investigator
  
  SHIGAKI Kazuasda
- Project Period (FY)
  2005 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Engineering fundamentals
- Research Institution
  Kumamoto National College of Technology
Irradiation temperature dependence of advanced semiconductor devices
- Principal Investigator
  
  KUDOU Tomohiro
- Project Period (FY)
  2005 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Inorganic materials/Physical properties
- Research Institution
  Kumamoto National College of Technology
Study on radiation damages of semiconductor devices for high and low temperaturePrincipal Investigator
- Principal Investigator
  
  SHIGAKI Kazusada
- Project Period (FY)
  2002 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Physical properties of metals
- Research Institution
  Kumamoto National College of Technology
Radiation damage of InGaAs device and its decrease methodPrincipal Investigator
- Principal Investigator
  
  KAZUSADA Shigaki
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Structural/Functional materials
- Research Institution
  Kumamoto National College of Technology

All 2003

All Journal Article

[Journal Article] Irradiation temperature dependence of radiation damage in STI diodes2003
- Author(s)
  H.Ohyama, K.Hayama, K.Takakura, T.Miura, K.Shigaki, T.Jono, E.Simoen, A.Poyai, C.Claeys
- Journal Title
  
  Microelectronic Engineering 66
  
  Pages: 517-521
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Influence of irradiation temperature on electron-irradiated STI diodes2003
- Author(s)
  H.Ohyama, K.Hayama, K.Takakura, T.Miura, K.Shigaki, T.Jono, E.Simoen, A.Poyai, C.Claeys
- Journal Title
  
  Journal of Materials Science 14
  
  Pages: 451-454
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660
[Journal Article] Radiation damage of Si photodides by high-temperature irradiation2003
- Author(s)
  H.Ohyama, K.Takakura, K.Shigaki, T.Jono, E.Simoen, C.Claeys, J.Uemura, T.Kishikawa
- Journal Title
  
  Microelectronic Engineering 66
  
  Pages: 536-541
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550660

1. KUDOU Tomohiro (90225160)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
2. HAYAMA Kiyoteru (00238148)

# of Collaborated Projects: 4 results

# of Collaborated Products: 2 results
3. OHYAMA Hidenori (80152271)

# of Collaborated Projects: 4 results

# of Collaborated Products: 3 results
4. HAKATA Tetusya (60237899)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
5. TAKAKURA Kenichirou (70353349)

# of Collaborated Projects: 3 results

# of Collaborated Products: 3 results

KAZUSADA Shigaki 紫垣 一貞

柴垣 一貞 シガキ カズサダ

紫垣 一貞 シガキ カズサダ

Research Projects

Research Products

Co-Researchers

Radiation damage mechanism of advanced semiconductor materials and devicesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Irradiation temperature dependence of advanced semiconductor devices

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Study on radiation damages of semiconductor devices for high and low temperaturePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Radiation damage of InGaAs device and its decrease methodPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Irradiation temperature dependence of radiation damage in STI diodes2003

Author(s)

Journal Title

Description

Data Source

[Journal Article] Influence of irradiation temperature on electron-irradiated STI diodes2003

Author(s)

Journal Title

Description

Data Source

[Journal Article] Radiation damage of Si photodides by high-temperature irradiation2003

Author(s)

Journal Title

Description

Data Source

KAZUSADA Shigaki 紫垣一貞

柴垣一貞シガキカズサダ

紫垣一貞シガキカズサダ