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MASUOKA Fujio  桝岡 富士雄

ORCIDConnect your ORCID iD *help
Researcher Number 50270822
External Links
Affiliation (based on the past Project Information) *help 1996 – 1999: 東北大学, 電気通信研究所, 教授
1997: 東北大学, 電気通信研究, 教授
Review Section/Research Field
Principal Investigator
電子デバイス・機器工学 / Electronic materials/Electric materials
Except Principal Investigator
電子デバイス・機器工学
Keywords
Principal Investigator
SGT / M-SGT / Flash memory / 3次元MOSFET / Flashメモリ / SGT Flashメモリ / M-SGTM-SGT / Three-dimensional MOSFET / SGT Flash memory / シリコン酸化膜 … More / フラッシュメモリ / 構造解析 / Silicon dioxide / Structural analysis … More
Except Principal Investigator
MOSトランジスタ / 3次元MOSトランジスタ / SGT / 電圧電流特性 / しきい値 / モビリティー / MOSトランジスター / 3次元MOSトランジスター / MOS Transistor / 3-Demensional MOS Transistor / Voltage Current Characteristics / Threshold Voltage / Mobility / 3次元集積回路 / 3次元MOSFET / MOS transistor / Three dimensional MOS transistor / Three dimensional integrated circuit Less
  • Research Projects

    (4 results)
  • Co-Researchers

    (2 People)
  •  The Investigation of break down mechanisms in silicon dioxide films by a combination of electrical and structural analysis methodsPrincipal Investigator

    • Principal Investigator
      MASAOKA Fujio
    • Project Period (FY)
      1998 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      TOHOKU UNIVERSITY
  •  Investigation of high performance three-dimensional integrated circuits using three dimensional MOS devices

    • Principal Investigator
      ENDOH Tetsuo
    • Project Period (FY)
      1998 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      TOHOKU UNIVERSITY
  •  Investigation of nano meter scale MOS transistors for integrated circuitsPrincipal Investigator

    • Principal Investigator
      MASUOKA Fujio
    • Project Period (FY)
      1997 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      TOHOKU UNIVERSITY
  •  Research of 3 Dimensional (3D) MOSFET's operation mechanism for future LSI

    • Principal Investigator
      ENDOH Tetsuo
    • Project Period (FY)
      1996 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      TOHOKU UNIVERSITY
  • 1.  ENDOH Tetsuo (00271990)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 0 results
  • 2.  SAKURABA Hiroshi (60241527)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results

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