Inagaki Koji 稲垣耕司

… Alternative Names

Inagaki Kouji 稲垣耕司

INAGAKI Koji 稲垣耕司

稲垣耕司イナガキコウジ

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Researcher Number	50273579
Other IDs
External Links
Affiliation (Current)	2022: 大阪大学, 大学院工学研究科, 助教
Affiliation (based on the past Project Information) *help	2016 – 2017: 大阪大学, 工学研究科, 助教 2015: 大阪大学, 工学(系)研究科(研究院), 助教 2012: 大阪大学, 工学(系)研究科(研究院), 助教 2010 – 2012: 大阪大学, 大学院・工学研究科, 助教 2009 – 2010: 大阪大学, 工学研究科, 助教 … More 2007 – 2008: 大阪大学, 大学院・工学研究科, 助教 2006: 大阪大学, 大学院工学研究科, 助手 2004 – 2005: 大阪大学, 大学院・工学研究科, 助手 2003 – 2005: 大阪大学, 工学研究科, 助手 1998 – 1999: 大阪大学, 大学院・工学研究科, 助手 Less
Review Section/Research Field	Principal Investigator 機械工作・生産工学 / Production engineering/Processing studies / Material processing/Microstructural control engineering Except Principal Investigator Science and Engineering / Production engineering/Processing studies / Engineering / Microdevices/Nanodevices / 計算科学
Keywords	Principal Investigator 超精密加工 / 第一原理計算 / 触媒援用加工法 / SiC / GaN / エッチング / 解離吸着 / Pt / HF / 光反射率スペクトル … More / 表面準位 / 表面電子状態 / Siウエハ / 加工表面評価 / ワイドバンドギャップ半導体 / 触媒援用加工 / 触媒 / 反応バリア / 触媒援用化学エッチング / CARE / 第一原理分子動力学シミュレーション / 活性化エネルギー / NEB法 / シリコンカーバイド / 窒化ガリウム / 水分子 / メタダイナミックス / 触媒反応 / NEB / H2O … More Except Principal Investigator X線ミラー / X線顕微鏡 / X線集光 / 超精密加工 / 第一原理電子状態計算 / 電気伝導特性 / ナノストラクチャー / 超精密形状計測 / 放射光 / コヒーレントX線 / 非球面ミラー / 数値制御加工 / X線光学 / 波面光学 / ナノ集光 / X線自由電子レーザー / X線自由電子レーザ / X 線光学 / 時間依存密度汎関数法 / 実空間差分法 / 鈴木トロッター公式 / レールウェイアルゴリズム / 電子デバイス / エネルギー回生 / 微細トランス / 第一原理電気伝導計算 / 量子化コンダクタンス / First-principles electronic structure calculation / Electron-conduction property / nanostructures Less

Analysis of reaction process in Catalyst-refered etching by means of first-principles calculationsPrincipal Investigator
- Principal Investigator
  
  Inagaki Kouji
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Material processing/Microstructural control engineering
- Research Institution
  Osaka University
Analysis of CAtalyst-Referred etching by means of first-principles calculationsPrincipal Investigator
- Principal Investigator
  
  INAGAKI Kouji
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Production engineering/Processing studies
- Research Institution
  Osaka University
Development of Nano-device simulator and application to low-power circuit
- Principal Investigator
  
  HIROSE Kikuji
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Microdevices/Nanodevices
- Research Institution
  Osaka University
Sub-10nm hard X-ray focusing and application to nanoscopy/spectroscopy
- Principal Investigator
  
  YAMAUCHI Kazuto
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Specially Promoted Research
- Review Section
  
  Science and Engineering
  Engineering
- Research Institution
  Osaka University
Development & Application of Design Method for Electron-Transport Properties of Nanostructures
- Principal Investigator
  
  HIROSE Kikuji
- Project Period (FY)
  2005 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Osaka University
Development of first-principles calculation program for electron-conduction properties of nanostructures
- Principal Investigator
  
  HIROSE Kikuji
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  計算科学
- Research Institution
  Osaka University
超高精度X線ミラー作製による高分解能硬X線顕微鏡の開発
- Principal Investigator
  
  YAMAUCHI Kazuto
- Project Period (FY)
  2003 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Production engineering/Processing studies
- Research Institution
  Osaka University
光反射率スペクトルの計測および第一原理解析による超精密加工表面の表面準位評価Principal Investigator
- Principal Investigator
  
  稲垣耕司
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  機械工作・生産工学
- Research Institution
  Osaka University

All 2018 2016 2015 2013 2012 2011 2010 2009 2008 Other

All Journal Article Presentation

[Journal Article] Platinum-catalyzed hydrolysis etching of SiC in water: A density functional theory study2018
- Author(s)
  Pho Van Bui, Daisetsu Toh, Ai Isohashi, Satoshi Matsuyama, Kouji Inagaki, Yasuhisa Sano, Kazuto Yamauchi and Yoshitada Morikawa
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 57 Issue: 5 Pages: 055703-055703
- DOI
  10.7567/jjap.57.055703
- NAID
  210000149060
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16J06391, KAKENHI-PROJECT-15K06505, KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105010, KAKENHI-INTERNATIONAL-15K21719
[Journal Article] Study on the mechanism of platinum-assisted hydrofluoric acid etching of SiC using density functional theory calculations2015
- Author(s)
  .V. Bui, A. Isohashi, H. Kizaki, Y. Sano, K. Yamauchi, Y. Morikawa, and K. Inagaki
- Journal Title
  
  Applied Physics Letters
  
  Volume: 107
- DOI
  10.1063/1.4935832
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-15K06505, KAKENHI-PROJECT-26410014, KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105010
[Journal Article] First-principles theoretical study of hydrolysis of stepped and kinked Ga-terminated GaN surfaces2013
- Author(s)
  M. Oue K. Inagaki K. Yamauchi Y. Morikawa
- Journal Title
  
  Nanoscale Research Letters
  
  Volume: 8 Pages: 232-232
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560110
[Journal Article] First-principles Analysis of Dissociative Absorption of HF Molecule at SiC Surface Step Edge2012
- Author(s)
  K. Inagaki, B. V. Pho, K. Yamauchi and Y. Morikawa
- Journal Title
  
  Materials Science Forum
  
  Volume: 717-720 Pages: 581-584
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560110
[Journal Article] First-Principles Study of Reaction Process of SiC and HF Molecules in Catalyst-Referred Etching2012
- Author(s)
  P.V. Bui, K. Inagaki, Y. Sano, K. Yamauchi, Y. Morikawa
- Journal Title
  
  Engineering Materials
  
  Volume: 523-524 Pages: 173-177
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560110
[Journal Article] One-dimensional sub-10-nm hard X-ray focusing using laterally graded multilayer mirror2011
- Author(s)
  H.Mimura, S.Handa, T.Kimura, H.Yumoto, D.Yamakawa, H.Yokoyama, S.Matsuyama, K.Inagaki, K.Yamamura, Y.Sano, K.Tamasaku, Y.Nishino, M.Yabashi,T.Ishikawa, K.Yamauchi
- Journal Title
  
  Nucl.Instrum.Meth.A 616
- Data Source
  KAKENHI-PROJECT-18002009
[Journal Article] An atomically controlled Si film formation process at low temperatures using atmospheric-pressure VHF plasma2011
- Author(s)
  K. Yasutake, H. Kakiuchi, H. Ohmi, K. Inagaki, Y. Oshikane and M. Nakano
- Journal Title
  
  Journal of Physics-Condensed Matter
  
  Volume: vol.23 Pages: 1-22
- DOI
  10.1088/0953-8984/23/39/394205
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246017, KAKENHI-PROJECT-22560110
[Journal Article] Single-nanometer focusing of hard x-rays by Kirkpatrick-Baez mirrors2011
- Author(s)
  K.Yamauchi, et al.
- Journal Title
  
  Journal of Physics: Condensed Matter
  
  Volume: 23 Pages: 394206-394206
- DOI
  10.1088/0953-8984/23/39/394206
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22310075, KAKENHI-PROJECT-22560110, KAKENHI-PROJECT-23651126, KAKENHI-PROJECT-23860001
[Journal Article] First-Principles Molecular-Dynamics Calculations on Chemical Reactions and Atomic Structures Induced by H Radical Impinging onto Si(001)2 x 1:H Surface2011
- Author(s)
  Kouji Inagaki, Ryota Kanai, Kikuji Hirose, Kiyoshi Yasutake
- Journal Title
  
  JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
  
  Volume: 11 Pages: 2952-2955
- DOI
  10.1166/jnn.2011.3905
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21510133
[Journal Article] Breaking the 10 nm barrier in hard-X-ray focusing2010
- Author(s)
  H.Mimura, (6名略), K.Inagaki, (5名略)T.Ishikawa, K.Yamauchi
- Journal Title
  
  NATURE PHYSICS
  
  Volume: 2 Pages: 122-125
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560110
[Journal Article] Breaking the 10 nm barrier in hard-X-ray focusing2010
- Author(s)
  H.Mimura, S.Handa, T.Kimura, H.Yumoto, D.Yamakawa, H.Yokoyama, S.Matsuyama, K.Inagaki, K.Yamamura, Y.Sano, K.Tamasaku, Y.Nishino, M.Yabashi,T.Ishikawa, K.Yamauchi
- Journal Title
  
  Nature Physics 6
  
  Pages: 122-125
- Data Source
  KAKENHI-PROJECT-18002009
[Journal Article] Breaking the 10nm barrier in hard-X-ray focusing2010
- Author(s)
  H.Mimura, (6名略), K.Inagaki, (5名略) T.Ishikawa, K.Yamauchi
- Journal Title
  
  NATURE PHYSICS
  
  Volume: 2 Pages: 122-125
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21510133
[Journal Article] First-principles analysis of He and H atom incidence onto hydrogen-terminated Si(001)2AE surface2008
- Author(s)
  Kouji Inagaki, Kikuji Hirose, Kiyoshi Yasutake
- Journal Title
  
  Surface and Interface Analysis 40
  
  Pages: 1088-1091
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17064012
[Journal Article] First-principles calculations of dielectric constants of C_<20> bulk using Wannier functions
- Author(s)
  Jun Otsuka, Tomoya Ono, Kouji Inagaki, Kikuji Hirose
- Journal Title
  
  Physica B (印刷中)
- Data Source
  KAKENHI-PROJECT-17064012
[Presentation] 自由エネルギー表面計算を高速化するための新しいメタダイナミクス法の開発2018
- Author(s)
  和田一真, 稲垣耕司, 森川良忠
- Organizer
  第65回応用物理学会春季学術講演会18p-P2-9
- Data Source
  KAKENHI-PROJECT-15K06505
[Presentation] Pt触媒を用いたGaN表面CARE加工の第一原理計算による解析 -Ga面のキンク部における反応解析-2018
- Author(s)
  稲垣耕司, Pho Bui Van, 長谷川未貴, 山内和人, 森川良忠
- Organizer
  2018年精密工学会春季大会学術講演会G80
- Data Source
  KAKENHI-PROJECT-15K06505
[Presentation] 水とPt触媒によるSiC/GaN表面エッチングの反応初期過程の第一原理シミュレーション2016
- Author(s)
  稲垣耕司
- Organizer
  関西薄膜・表面セミナー
- Place of Presentation
  神戸セミナーハウス、兵庫県神戸市
- Data Source
  KAKENHI-PROJECT-15K06505
[Presentation] First-Principles Simulations of Platinum-Assisted Water Etching of SiC2016
- Author(s)
  P. V. Bui, A. Isohashi, K. Inagaki, Y. Sano, K. Yamauchi, and Y. Morikawa
- Organizer
  ECOSS32 - European Conference on Surface Science
- Place of Presentation
  Grenoble, France
- Year and Date
  2016-08-28
- Data Source
  KAKENHI-PROJECT-15K06505
[Presentation] aN表面CARE加工の反応メカニズムの第一原理計算による解析II -表面キンクサイト周辺のH2O終端構造-2016
- Author(s)
  稲垣耕司、森川良忠、山内和人
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス、東京都目黒区
- Year and Date
  2016-03-20
- Data Source
  KAKENHI-PROJECT-15K06505
[Presentation] First‐Principles Simulations of Initial Etching Process of SiC with Water Assisted by Platinum Catalyst2015
- Author(s)
  P. V. Bui, K. Inagaki, H. Kizaki, Y. Sano, K. Yamauchi and Y. Morikawa
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2015
- Place of Presentation
  Giardini Naxos, Italy
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K06505
[Presentation] GaN表面CARE加工の反応メカニズムの第一原理計算による解析ステップ/キンク部における水分子の解離吸着2015
- Author(s)
  稲垣耕司、森川良忠、山内和人
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場、愛知県名古屋市
- Year and Date
  2015-09-14
- Data Source
  KAKENHI-PROJECT-15K06505
[Presentation] First-Principles Simulations of Catalyst Assisted Wet-etching Processes at Semiconductor Surfaces2012
- Author(s)
  K. Inagaki
- Organizer
  Fifth International Symposium on Atomically Controlled Fabrication Technology
- Place of Presentation
  Osaka Japan
- Data Source
  KAKENHI-PROJECT-22560110
[Presentation] 第一原理計算によるHF水溶液のアニーリング2012
- Author(s)
  弘瀬大地, 稲垣耕司, 森川良忠
- Organizer
  日本物理学会第67回年次大会
- Place of Presentation
  兵庫県西宮市
- Year and Date
  2012-03-26
- Data Source
  KAKENHI-PROJECT-22560110
[Presentation] HラジカルによるSi表面プラズマェッチングにおける表面H拡散の役割2012
- Author(s)
  稲垣耕司, 森川良忠, 安武潔
- Organizer
  応用物理学会2012年度春季大会
- Place of Presentation
  東京都新宿区
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-22560110
[Presentation] First- Principles Simulations of Catalyst Assisted Wet-etching Processes at Semiconductor Surfaces2012
- Author(s)
  K. Inagaki,M. Oue,B.V. Pho,D. Hirose,K. Yamauchi , and Y. Morikawa
- Organizer
  Fifth International Symposium on Atomically Controlled Fabrication Technology
- Place of Presentation
  Osaka
- Data Source
  KAKENHI-PROJECT-22560110
[Presentation] 第一原理計算による HF 水溶液のアニーリング2012
- Author(s)
  弘瀬大地,稲垣耕司,森川良忠
- Organizer
  日本物理学会第67回年次大会
- Place of Presentation
  関西学院大学
- Data Source
  KAKENHI-PROJECT-22560110
[Presentation] Pt触媒を用いた水分子によるGaN表面エッチング現象初期過程の第一原理計算による解明2012
- Author(s)
  大上まり, 稲垣耕司, 山内和人, 森川良忠
- Organizer
  応用物理学会2012年度春季大会
- Place of Presentation
  東京都新宿区
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-22560110
[Presentation] 第一原理計算による GaN 表面エッチング現象初期過程の解明2012
- Author(s)
  大上まり、稲垣耕司、山内和人、森川良忠
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学
- Data Source
  KAKENHI-PROJECT-22560110
[Presentation] HによるSi表面エッチングにおけるH終端Si(001)表面上でのH拡散の寄与2011
- Author(s)
  稲垣耕司, 広瀬喜久治, 森川良忠, 安武潔
- Organizer
  日本物理学会2011年年次大会
- Place of Presentation
  新潟市
- Data Source
  KAKENHI-PROJECT-21510133
[Presentation] 第一原理計算によるGaN(0001)表面の終端原子構造の解析2011
- Author(s)
  大上まり, 稲垣耕司, 森川良忠
- Organizer
  日本物理学会2011年年次大会
- Place of Presentation
  新潟市
- Data Source
  KAKENHI-PROJECT-22560110
[Presentation] カーボンアロイ触媒によるCO酸化反応の第一原理シミュレーション2011
- Author(s)
  井関信太郎, 稲垣耕司, 森川良忠
- Organizer
  日本物理学会2011年年次大会
- Place of Presentation
  新潟市
- Data Source
  KAKENHI-PROJECT-21510133
[Presentation] 第一原理計算によるGaN(0001)表面の終端原子構造の解析2011
- Author(s)
  大上まり, 稲垣耕司, 森川良忠
- Organizer
  日本物理学会2011年年次大会
- Place of Presentation
  新潟市
- Data Source
  KAKENHI-PROJECT-21510133
[Presentation] カーボンアロイ触媒によるCO酸化反応の第一原理シミュレーション2011
- Author(s)
  井関信太郎, 稲垣耕司, 森川良忠
- Organizer
  日本物理学会2011年年次大会
- Place of Presentation
  新潟市
- Data Source
  KAKENHI-PROJECT-22560110
[Presentation] First-Principles Analysis on Si(001) Etching with Hydrogen Radicals2011
- Author(s)
  K. Inagaki, K. Hirose, Y. Morikawa, and K. Yasutake
- Organizer
  Fourth International Symposium on Atomically Controlled Fabrication Technology
- Place of Presentation
  Osaka
- Data Source
  KAKENHI-PROJECT-21510133
[Presentation] HによるSi表面エッチングにおけるH終端Si(001)表面上でのH拡散の寄与2011
- Author(s)
  稲垣耕司, 広瀬喜久治, 森川良忠, 安武潔
- Organizer
  日本物理学会2011年年次大会
- Place of Presentation
  新潟市
- Data Source
  KAKENHI-PROJECT-22560110
[Presentation] First-principles Analysis Silicon Etching by Hydrogen Radical-Diffusion of Absorbed Hydrogen Atom on Si(001)2x1 Surface-2010
- Author(s)
  K.Inagaki K.Hirose Y.Morikawa, K.Yasutake
- Organizer
  Third International Symposium on Atomically Controlled Fabrication Technology
- Place of Presentation
  Suita, Japan
- Year and Date
  2010-11-24
- Data Source
  KAKENHI-PROJECT-22560110
[Presentation] First-Principles study of electron transfer from 4H-SiC(0001) to Pt2010
- Author(s)
  S.Iseki, K.Inagaki, K.Yamauchi, Y.Morikawa
- Organizer
  International Conference on Core Research and Engineering Science of Advanced Materials
- Place of Presentation
  Osaka, Japan
- Data Source
  KAKENHI-PROJECT-21510133
[Presentation] H終端2x1Si(001)表面に過剰吸着したH原子の拡散過程2010
- Author(s)
  稲垣耕司、広瀬喜久治、安武潔
- Organizer
  日本物理学会2010年秋季大会
- Place of Presentation
  長崎市
- Data Source
  KAKENHI-PROJECT-22560110
[Presentation] 第一原理分子動力学シミュレーションによる固体表面現象の解析2010
- Author(s)
  稲垣耕司
- Organizer
  第1回表面物理若手勉強会
- Place of Presentation
  吹田市
- Year and Date
  2010-11-07
- Data Source
  KAKENHI-PROJECT-21510133
[Presentation] First-Principles Study of CO Oxidation on Carbon Alloy Catalysts2010
- Author(s)
  S.Iseki, K.Inagaki, Y.Morikawa
- Organizer
  Third International Symposium on Atomically Controlled Fabrication Technology
- Place of Presentation
  Suita, Japan
- Year and Date
  2010-11-24
- Data Source
  KAKENHI-PROJECT-22560110
[Presentation] カーボンアロイ触媒によるCO酸化反応の第一原理シミュレーション2010
- Author(s)
  井関信太郎、稲垣耕司、森川良忠
- Organizer
  第4回分子科学討論会2010大阪
- Place of Presentation
  大阪府豊中市
- Data Source
  KAKENHI-PROJECT-22560110
[Presentation] First-Principles study of electron transfer from 4H-SiC(0001) to Pt2010
- Author(s)
  S.Iseki, K.Inagaki, K.Yamauchi, Y.Morikawa
- Organizer
  International Conference on Core Research and Engineering Science of Advanced Materials
- Place of Presentation
  Osaka, Japan
- Data Source
  KAKENHI-PROJECT-22560110
[Presentation] カーボンアロイ触媒によるCO酸化反応の第一原理シミュレーション2010
- Author(s)
  井関信太郎、稲垣耕司、森川良忠
- Organizer
  第4回分子科学討論会2010大阪
- Place of Presentation
  大阪府豊中市
- Data Source
  KAKENHI-PROJECT-21510133
[Presentation] First-principles Analysis Silicon Etching by Hydrogen Radical-Diffusion of Absorbed Hydrogen Atom on Si(001)2x1 Surface-2010
- Author(s)
  K.Inagaki, K. Hirose, Y. Morikawa, K.Yasutake
- Organizer
  Third International Symposium on Atomically Controlled Fabrication Technology
- Place of Presentation
  Suita, Japan
- Year and Date
  2010-11-24
- Data Source
  KAKENHI-PROJECT-21510133
[Presentation] H終端2x1Si(001)表面に過剰吸着したH原子の拡散過程2010
- Author(s)
  稲垣耕司、広瀬喜久治、安武潔
- Organizer
  日本物理学会2010年秋季大会
- Place of Presentation
  長崎市
- Data Source
  KAKENHI-PROJECT-21510133
[Presentation] First-Principles Study of CO Oxidation on Carbon Alloy Catalysts2010
- Author(s)
  S.Iseki, K.Inagaki, Y.Morikawa
- Organizer
  Third International Symposium on Atomically Controlled Fabrication Technology
- Place of Presentation
  Suita, Japan
- Year and Date
  2010-11-24
- Data Source
  KAKENHI-PROJECT-21510133
[Presentation] 水素終端化Si(001)2x1表面に過剰吸着したHの拡散2010
- Author(s)
  稲垣耕司、広瀬喜久治、安武潔
- Organizer
  日本物理学会2010年秋季大会
- Place of Presentation
  大阪市
- Data Source
  KAKENHI-PROJECT-21510133
[Presentation] 水素終端化Si(001)2x1表面に過剰吸着したHの拡散2010
- Author(s)
  稲垣耕司、広瀬喜久治、安武潔
- Organizer
  日本物理学会2010年秋季大会
- Place of Presentation
  大阪市
- Data Source
  KAKENHI-PROJECT-22560110
[Presentation] First-principles molecular-dynamics simulation of reaction in CVD Si epitaxial thin film growth process-hydrogen coverage dependence on incident radical temperature-2009
- Author(s)
  K. Inagaki, R. Kasai, K. Hirose and K. Yasutake
- Organizer
  Second International Symposium on Atomically Controlled Fabrication Technology
- Place of Presentation
  Osaka
- Data Source
  KAKENHI-PROJECT-21510133
[Presentation] 第一原理計算による色素増感型太陽電池の新色素設計手法のためのプログラム開発2009
- Author(s)
  古山健介, 稲垣耕司, 広瀬喜久治, 後藤英和
- Organizer
  日本物理学会2009年秋季大会
- Place of Presentation
  熊本大学 (熊本市)
- Year and Date
  2009-09-28
- Data Source
  KAKENHI-PROJECT-21510133
[Presentation] First-principles molecular-dynamics analysis on hydrogen coverage in chemical vapor deposition of silicon thin film2009
- Author(s)
  Kouji Inagaki, Ryota Kanai, Kikuji Hirose, and Kiyoshi Yasutake
- Organizer
  The 12th Asian Workshop on First-Principles Electronic Structure Calculations
- Place of Presentation
  Beijing, China
- Data Source
  KAKENHI-PROJECT-21510133
[Presentation] First-principles molecular-dynamics simulation of reaction in CVD Siepitaxial thin film growth process -hydrogen coverage dependence on incident radical temperature-2009
- Author(s)
  K.Inagaki, R.Kasai, K.Hirose, K.Yasutake
- Organizer
  Second International Symposium on Atomically Controlled Fabrication Technology
- Place of Presentation
  Osaka University Nakanoshima Center, Osaka
- Year and Date
  2009-11-25
- Data Source
  KAKENHI-PROJECT-21510133
[Presentation] 第一原理計算による色素増感型太陽電池の新色素設計手法のためのプログラム開発2009
- Author(s)
  古山健介、稲垣耕司、広瀬喜久治、後藤英和
- Organizer
  日本物理学会2009年秋季大会
- Place of Presentation
  熊本市
- Data Source
  KAKENHI-PROJECT-21510133
[Presentation] First-Principles Molecular-Dynamics Analysis of Sueface Reaction in Low-Temperature Si Thin Film Growth-Adsorption of Reactive Precursors onto H-Terminated Si Surface-2009
- Author(s)
  K Inagaki, R. Kanai, K. Hirose, and K. Yasutake
- Organizer
  First International Symposium on Atomically Controlled Fabrication Technology Surface and Thin Film Processing, Osaka, February 16-17, 2009
- Place of Presentation
  Osaka, Japan
- Year and Date
  2009-02-16
- Data Source
  KAKENHI-PROJECT-17064012
[Presentation] Time evolving Self-Consistent calculation based on Real-Space Finite-Difference Method2008
- Author(s)
  Kensuke Koyama, Kouji Inagaki, Kikuji Hirose, and Hidekazu Goto
- Organizer
  The 11th Asian Workshop On First-Principles Electronic Structure Calculations, November 3-5, 2008
- Place of Presentation
  Kaohsiung, Taiwan
- Year and Date
  2008-11-01
- Data Source
  KAKENHI-PROJECT-17064012
[Presentation] The development of TDDFT Self-Consistent calculation program based on Real-Space Finite-Difference Method2008
- Author(s)
  K. Koyama, K. Inagaki, K. Hirose and H. Goto
- Organizer
  International Conference on Quantum Simulators and Design 2008, May 31-June 3, 2008
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2008-06-01
- Data Source
  KAKENHI-PROJECT-17064012

1. YAMAUCHI Kazuto (10174575)

# of Collaborated Projects: 4 results

# of Collaborated Products: 18 results
2. YAMAMURA Kazuya (60240074)

# of Collaborated Projects: 3 results

# of Collaborated Products: 2 results
3. SANO Yasuhisa (40252598)

# of Collaborated Projects: 3 results

# of Collaborated Products: 2 results
4. HIROSE Kikuji (10073892)

# of Collaborated Projects: 3 results

# of Collaborated Products: 16 results
5. GOTO Hidekazu (80170463)

# of Collaborated Projects: 3 results

# of Collaborated Products: 4 results
6. MIMURA Hidekazu (30362651)

# of Collaborated Projects: 2 results

# of Collaborated Products: 2 results
7. ONO Tomoya (80335372)

# of Collaborated Projects: 2 results

# of Collaborated Products: 1 results
8. MORIKAWA Yoshitada (80358184)

# of Collaborated Projects: 2 results

# of Collaborated Products: 24 results
9. EGAMI Yoshiyuki (20397631)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. TAKAHASHI Yukio (00415217)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. MATSUYAMA Satoshi (10423196)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
12. 森勇藏 (00029125)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. KIZAKI Hidetoshi

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
14. 大参宏昌

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
15. 安武潔

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
16. 垣内弘章

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
17. 木村隆志

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Inagaki Koji 稲垣 耕司

Inagaki Kouji 稲垣 耕司

INAGAKI Koji 稲垣 耕司

稲垣 耕司 イナガキ コウジ

Research Projects

Research Products

Co-Researchers

Analysis of reaction process in Catalyst-refered etching by means of first-principles calculationsPrincipal Investigator

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Analysis of CAtalyst-Referred etching by means of first-principles calculationsPrincipal Investigator

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Development of Nano-device simulator and application to low-power circuit

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Sub-10nm hard X-ray focusing and application to nanoscopy/spectroscopy

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Development & Application of Design Method for Electron-Transport Properties of Nanostructures

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Development of first-principles calculation program for electron-conduction properties of nanostructures

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超高精度X線ミラー作製による高分解能硬X線顕微鏡の開発

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光反射率スペクトルの計測および第一原理解析による超精密加工表面の表面準位評価Principal Investigator

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Project Period (FY)

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[Journal Article] Platinum-catalyzed hydrolysis etching of SiC in water: A density functional theory study2018

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[Journal Article] Study on the mechanism of platinum-assisted hydrofluoric acid etching of SiC using density functional theory calculations2015

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[Journal Article] First-principles theoretical study of hydrolysis of stepped and kinked Ga-terminated GaN surfaces2013

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[Journal Article] First-principles Analysis of Dissociative Absorption of HF Molecule at SiC Surface Step Edge2012

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[Journal Article] First-Principles Study of Reaction Process of SiC and HF Molecules in Catalyst-Referred Etching2012

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[Journal Article] One-dimensional sub-10-nm hard X-ray focusing using laterally graded multilayer mirror2011

Inagaki Koji 稲垣耕司

Inagaki Kouji 稲垣耕司

INAGAKI Koji 稲垣耕司

稲垣耕司イナガキコウジ

[Presentation] 自由エネルギー表面計算を高速化するための新しいメタダイナミクス法の開発2018

[Presentation] 水とPt触媒によるSiC/GaN表面エッチングの反応初期過程の第一原理シミュレーション2016

[Presentation] GaN表面CARE加工の反応メカニズムの第一原理計算による解析ステップ/キンク部における水分子の解離吸着2015