Nakamura Jun 中村淳

… Alternative Names

JUN Nakamura 中村淳

NAKAMURA Jun 中村淳

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Researcher Number	50277836
Other IDs
Affiliation (Current)	2022: 電気通信大学, 大学院情報理工学研究科, 教授
Affiliation (based on the past Project Information) *help	2012: 電気通信大学, 情報理工学(系)研究科, 教授 2011 – 2012: 電気通信大学, 大学院・情報理工学研究科, 教授 2010: 電気通信大学, 大学院・情報理工学研究科, 准教授 2007 – 2009: The University of Electro-Communications, 電気通信学部, 准教授 2008: 電気通信学部, 電気通信大学, 准教授 2007: 電気通信大学, 准教授 2001 – 2003: 電気通信大学, 電気通信学部, 助手
Review Section/Research Field	Principal Investigator Thin film/Surface and interfacial physical properties / Science and Engineering Except Principal Investigator Science and Engineering / Condensed matter physics I / 固体物性Ⅰ(光物性・半導体・誘電体)
Keywords	Principal Investigator 第一原理計算 / ナノ材料 / 電子デバイス / 表面界面物性 / 超格子 / ヘテロ界面 / バンド不連続 / 局所誘電率 / ポリタイプ / III-V族化合物半導体表面 … More / 初期吸着構造 / 電子回折法 / 強磁性 / Ｍｎ原子ワイヤ / 走査トンネル顕微鏡 / Mn原子ワイヤ / GaAs表面 … More Except Principal Investigator 局所誘電特性 / SiO_2 / Si / ナノメータ・スケール素子 / 微細化限界 / 理論的アセスメント / シリコン集積回路 / ナノテクノロジー / 第一原理計算 / トランスポート / ナノメータ・スケール / 集積エレクトロニクス / ナノトライボロジー / 超潤滑 / 摩擦 / 摩擦力顕微鏡 / ナノコンタクト / Tomlinsonモデル / 高次スリップ運動 / スティックスリップ運動 / 計算物性 / 半導体超微細化 / .表面・界面物性 / 界面欠陥 / 表面・界面 / 欠陥 / 計算物理学 / high-k膜 / GeO2 / 価電子帯バンドオフセット / トンネル障壁 / ホール浸入長 / Si酸化膜 / valence band offset / tunneling barrier / hole penetration depth / silicon dioxide Less

ホモマテリアルヘテロ界面の周期配列制御によるメタマテリアルの創製Principal Investigator
- Principal Investigator
  
  中村淳
- Project Period (FY)
  2010 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Electro-Communications
Development of the novel ferromagnetic materials by the two-dimensional structure control and clarification of the mechanism of the ferromagnetism for Mn-GaAsPrincipal Investigator
- Principal Investigator
  
  NAKAMURA Jun
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  The University of Electro-Communications
ナノスケールSiO2/Si界面の局所誘電特性に及ぼす欠陥の影響
- Principal Investigator
  
  名取晃子
- Project Period (FY)
  2008 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Electro-Communications
ナノスケールSiO2/Si界面の電子状態と局所誘電特性に及ぼす欠陥の影響
- Principal Investigator
  
  名取晃子
- Project Period (FY)
  2007
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Electro-Communications
Atomic-scale dielectric properties at the interface between Si and La-based oxidesPrincipal Investigator
- Principal Investigator
  
  NAKAMURA Jun
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  The University of Electro-Communications
Mechanism of friction and superlubricity in nanometer-scale contacts
- Principal Investigator
  
  NATORI Akiko
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Condensed matter physics I
- Research Institution
  The University of Electro-Communications
ナノメータ・スケール集積エレクトロニクスの理論的構築
- Principal Investigator
  
  名取研二
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  University of Tsukuba
Atomistic tunnelig barrier of heteroepitaxial SiO_2/Si(001)
- Principal Investigator
  
  NATORI Akiko
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  固体物性Ⅰ(光物性・半導体・誘電体)
- Research Institution
  The University of Electro-Communications

All 2013 2012 2011 2010 2009 2008 2007 2006

All Journal Article Presentation

[Journal Article] Controlled incorporation of Mn in GaAs: Role ofsurface reconstructions2013
- Author(s)
  Akihiro Ohtake, Atsushi Hagiwara, and Jun Nakamura
- Journal Title
  
  Physical Review B
  
  Volume: B 87
- DOI
  10.1103/physrevb.87.165301
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360020
[Journal Article] Magnetic properties of a single molecular layer of MnAs on GaAs(110)2013
- Author(s)
  Motoi Hirayama, Akiko Natori, and JunNakamura
- Journal Title
  
  Physical Review
  
  Volume: B 87
- DOI
  10.1103/physrevb.87.075428
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360020
[Journal Article] First-principles calculations of the dielectric constant for the GeO2 films2011
- Author(s)
  M.Tamura, J.Nakamura, A.Natori
- Journal Title
  
  Key Eng.Mat.
  
  Volume: 470 Pages: 60-65
- DOI
  10.4028/www.scientific.net/kem.470.60
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-22013006
[Journal Article] n-plane strain effects on dielectric properties of the HfO2 thin film2009
- Author(s)
  S. Wakui, J. Nakamura, A. Natori
- Journal Title
  
  J. Vac. Sci. Technol. B 27
  
  Pages: 2020-2020
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560020
[Journal Article] Ballistic thermal conductance of electrons in graphene ribbons2009
- Author(s)
  E.Watanabe, S.Yamaguchi, J.Nakamura, A.Natori
- Journal Title
  
  Phys.Rev.B 80
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035005
[Journal Article] Band bending effects on scanning tunneling microscope images of subsurface dopants2009
- Author(s)
  M.Hirayama, J.Nakamura, A.Natori
- Journal Title
  
  J.Appl.Phys. 105
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035005
[Journal Article] In-plane strain effect on dielectric properties of the HfO2 thin films2009
- Author(s)
  S.Wakui, J.Nakamura, A.Natori
- Journal Title
  
  J.Vac Sci.Technol.B 27
  
  Pages: 2020-2023
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035005
[Journal Article] Negative donors in bulk Si and Si/SiO2 quantum wells in a magnetic field2009
- Author(s)
  J. Inoue, T. Chiba, A. Natori, J. Nakamura
- Journal Title
  
  Phys. Rev. B 79
  
  Pages: 305206-305206
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560020
[Journal Article] Anisotropic half-metallic ground state of Mn atomic wire on GaAs(110)2009
- Author(s)
  M.Hirayama, J.Nakamura, A.Natori
- Journal Title
  
  J.Vac.Sci.Technol.B 27
  
  Pages: 2062-2065
- NAID
  10025620814
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035005
[Journal Article] Size effects in friction of multiatomic sliding contacts2008
- Author(s)
  M. Igarashi, J. Nakamura, A. Natori
- Journal Title
  
  Phys. Rev. B 78
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18540313
[Journal Article] Atomic scale dielectric constant near the SiO2/Si(001) interface2008
- Author(s)
  S. Wakui, J. Nakamura, A. Natori
- Journal Title
  
  J. Vac. Sci. Technol. B 26
  
  Pages: 1579-1579
- Data Source
  KAKENHI-PROJECT-19560020
[Journal Article] Atomic scale dielectric constant near the SiO2/Si(001)interface2008
- Author(s)
  S. Wakui, J. Nakamura, A. Natori
- Journal Title
  
  J. Vac. Sci. Technol. B 26
  
  Pages: 1579-1584
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035005
[Journal Article] Size effects in friction of multiatomic sliding contacts2008
- Author(s)
  M.Igarashi, J.Nakamura, A.Natori
- Journal Title
  
  Phys. Rev. B 78
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18540313
[Journal Article] Nano-Scale Profile of the Dielectric Constant Near the Si/oxide Interface: A First-Principles Approach2007
- Author(s)
  J. Nakamura, S. Wakui, S. Eguchi, R. Yanai, A. Natori
- Journal Title
  
  ECS Trans. 11
  
  Pages: 273-273
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560020
[Journal Article] Dielectric properties of the interface between Si and SiO22007
- Author(s)
  S.Wakui, J.Nakamura, A.Natori
- Journal Title
  
  Jpn.J.Appl.Phys. 46
  
  Pages: 3261-3264
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026004
[Journal Article] Dielectric properties of the interface between Si and SiO22007
- Author(s)
  S. Wakui, J. Nakamura, A. Natori
- Journal Title
  
  Jpn. J. Appl. Phys. 46
  
  Pages: 3261-3261
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560020
[Journal Article] Dielectric discontinuity at a twin boundary in Si (111)2007
- Author(s)
  J. Nakamura, A. Natori
- Journal Title
  
  Proc. of the 28th International Conference on the Physics of Semiconductors, J. Menendez and C. G. van de Walle (Eds.)(AIP Proceedings) 893
  
  Pages: 5-6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560020
[Journal Article] Nano-Scale Profile of the Dielectric Constant Near the Si/oxide Interface: A First-Principles Approach2007
- Author(s)
  J. Nakamura, S. Wakui, S. Eguchi, R. Yanai, A. Natori
- Journal Title
  
  ECS-Trans. 11
  
  Pages: 173-182
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560020
[Journal Article] Mechanism of velocity saturation of atomic friction force and dynamic superlubricity at torsional resonance2007
- Author(s)
  M.Igarashi, J.Nakamura, A.Natori
- Journal Title
  
  Jpn. J. Appl. Phys.
- Data Source
  KAKENHI-PROJECT-18540313
[Journal Article] Nano-scale profile of the dielectric constant near the Si/oxide interface:A first-principles approach2007
- Author(s)
  J.Nakamura, S.Wakui, S.Eguchi, R.Yanai, A.Natori
- Journal Title
  
  ECS Trans. 11
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026004
[Journal Article] Mechanism of velocity saturation of atomic friction and the dynamic superlubricity at torsional resonance2007
- Author(s)
  M. Igarashi, J. Nakamura, A. N Atori
- Journal Title
  
  Jpn. J. Appl. Phys. 46
  
  Pages: 5591-5594
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18540313
[Journal Article] Dielectric discontinuity at a twin boundary in Si(111)2007
- Author(s)
  J. Nakamura, A. Natori
- Journal Title
  
  Proc. 28th Int. Conf. Semi. Phys. 893
  
  Pages: 5-5
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560020
[Journal Article] Mechanism of velocity saturation of atomic friction2007
- Author(s)
  M.Igarashi, J.Nakamura, A.Natori
- Journal Title
  
  Jpn. J. Appl. Phys 46
  
  Pages: 5591-5594
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18540313
[Presentation] STM測定と第一原理計算によるGaAs-c(4×4)α,βの電子構造解析2013
- Author(s)
  加来滋、中村淳、吉野淳二
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  厚木
- Year and Date
  2013-03-29
- Data Source
  KAKENHI-PROJECT-22360020
[Presentation] Atomic Arrangements and structural stability of the Mn adsorbed GaAs(001) surfaces2012
- Author(s)
  Atsushi Hagiwara, Akihiro Ohtake, and Jun Nakamura
- Organizer
  American Vacuum Society 59th International Symposium & Exhibition (AVS-59)
- Place of Presentation
  Tampa, USA
- Year and Date
  2012-10-30
- Data Source
  KAKENHI-PROJECT-22360020
[Presentation] Structural stability and electronic states of Cr or Mn on GaAs(001)-c(4x4)2012
- Author(s)
  Kazuya Okukita and Jun Nakamura
- Organizer
  The 17th International Conference on Molecular Beam Epitaxy (MBE2012)
- Place of Presentation
  Nara
- Year and Date
  2012-09-27
- Data Source
  KAKENHI-PROJECT-22360020
[Presentation] Mn-induced surface reconstructions on GaAs(001)2011
- Author(s)
  A.Ohtake, M.Hirayama, Y.Kanno, J.Nakamura
- Organizer
  38th International Symposiutm on Compound Semiconductors
- Place of Presentation
  Berlin, Germany
- Year and Date
  2011-05-03
- Data Source
  KAKENHI-PROJECT-22360020
[Presentation] Mn吸着(2x2)-GaAs(001)表面構造および電子状態2011
- Author(s)
  菅野雄介、大竹晃浩、中村淳
- Organizer
  日本物理学会第67回年次大会
- Place of Presentation
  西宮
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-22360020
[Presentation] First-principles evaluation of the local dielectric properties of GeO2 ultrathin films2011
- Author(s)
  J.Nakamura
- Organizer
  15th International Conference on Thin Films (ICTF-15)
- Place of Presentation
  Kyoto, Japan(招待講演)
- Year and Date
  2011-11-10
- Data Source
  KAKENHI-PUBLICLY-22013006
[Presentation] GaAs(001)-(2x2)Mn表面の原子配列と電子状態評価2011
- Author(s)
  菅野雄介、大竹晃浩、平山基、中村淳
- Organizer
  日本物理学会2011年秋季大会
- Place of Presentation
  富山
- Year and Date
  2011-09-23
- Data Source
  KAKENHI-PROJECT-22360020
[Presentation] Local Profile of the Dielectric Constant Near the Oxygen Vacancy in the GeO2 Films2011
- Author(s)
  J.Nakamura, M.Tamura
- Organizer
  American Vacuum Society 58th International Symposium & Exhibition (AVS-58)
- Place of Presentation
  Nashville, USA
- Year and Date
  2011-11-01
- Data Source
  KAKENHI-PUBLICLY-22013006
[Presentation] Mn-induced surface reconstructions on GaAs(001)2011
- Author(s)
  Akihiro Ohtake, Motoi Hirayama, Yusuke Kanno, and Jun Nakamura
- Organizer
  38th International Symposium on Compound Semiconductors (ISCS-38)
- Place of Presentation
  Berlin, Germany
- Year and Date
  2011-05-03
- Data Source
  KAKENHI-PROJECT-22360020
[Presentation] Evaluation of the local dielectric constant near the oxygen vacancy for the defective HfO2 and SiO2 films2010
- Author(s)
  J.Nakamura
- Organizer
  The 37th International Symposium on Compound Semiconductors
- Place of Presentation
  高松シンボルタワー(香川県)
- Year and Date
  2010-06-01
- Data Source
  KAKENHI-PUBLICLY-22013006
[Presentation] Mn吸着GaAs(001)表面の原子配列2010
- Author(s)
  大竹晃浩、萩原敦、中村淳
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  松山
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-22360020
[Presentation] Ge酸化物超薄膜の誘電特性2009
- Author(s)
  田村雅大、涌井貞一、中村淳、名取晃子
- Organizer
  第29回表面科学学術講演会
- Place of Presentation
  タワーホール船堀
- Year and Date
  2009-10-27
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] In-plane strain effects on dielectric properties of the HfO2 thin film2009
- Author(s)
  S. Wakui, J. Nakamura, A. Natori
- Organizer
  36th Conference on the Physics and Chemistry of Surfaces and Interfaces(PCSI-36)
- Place of Presentation
  Santa Barbara, CA, 米国
- Year and Date
  2009-01-12
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] Nano-scale profile of the dielectric constant near surfaces and interfaces2009
- Author(s)
  中村淳
- Organizer
  2^<nd> Int.Workshop on epitaxial growth and fundamental properties of semiconductor nanostructures
- Place of Presentation
  阿南
- Year and Date
  2009-08-11
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] Dielectric constant profiles of the thin-films : Alpha- and Beta-quartz phase of(Si or Ge)dioxide2009
- Author(s)
  中村淳, 涌井貞一, 田村雅大, 名取晃子
- Organizer
  12^<th> Conf.on the Formation of Semiconductor Interfaces
- Place of Presentation
  Weimer、ドイツ
- Year and Date
  2009-07-07
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] Nano-scale profile of the dielectric constant near surfaces and interfaces: A first-principles approach2009
- Author(s)
  J. Nakamura
- Organizer
  2nd International Workshop on Epitaxial growth and Fundamental Properties of Semiconductor Nanostructures
- Place of Presentation
  SemiconNano 2009(招待講演)
- Year and Date
  2009-08-12
- Data Source
  KAKENHI-PROJECT-19560020
[Presentation] HfO2超薄膜の誘電特性:結晶構造依存性2009
- Author(s)
  涌井貞一、中村淳、名取晃子
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] 歪みHfO2薄膜の誘電特性2009
- Author(s)
  涌井貞一、中村淳、名取晃子
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] Dielectric constant profiles of the thin-films : alpha- and beta-quartz phases of(Si or Ge)dioxides2009
- Author(s)
  J.Nakamura
- Organizer
  12th International Conference on the Formation of Semiconductor Interfaces(ICFSI-12)
- Place of Presentation
  Weimar, Germany
- Year and Date
  2009-07-07
- Data Source
  KAKENHI-PROJECT-19560020
[Presentation] 第一原理計算によるSi(001)/La2O3(01-10)界面のバンドオフセット2009
- Author(s)
  谷内亮介、中村淳、名取晃子
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] Nano-scale profile of the dielectric constant near surfaces and interfaces : A first-principles approach(招待講演)2009
- Author(s)
  J.Nakamura
- Organizer
  2nd International Workshop on Epitaxial growth and Fundamental Properties of Semiconductor Nanostructures(SemiconNano 2009)
- Place of Presentation
  Anan, Tokushima, Japan
- Year and Date
  2009-08-12
- Data Source
  KAKENHI-PROJECT-19560020
[Presentation] Dielectric properties of the Interface between Si and SiO22008
- Author(s)
  S. Wakui, J. Nakamura, A. Natori
- Organizer
  35th Conference on the Physics and Chemistry of Semiconductor Interfaces
- Place of Presentation
  Santa Fe, NM, USA
- Data Source
  KAKENHI-PROJECT-19560020
[Presentation] HfO2超薄膜の局所誘電率プロファイル2008
- Author(s)
  涌井貞一, 中村淳, 名取晃子
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] Poly type dependence of permittivity of SiC films2008
- Author(s)
  J. Nakamura
- Organizer
  14th International Conference on Solid Films and Surfaces (ICSFS-14)
- Place of Presentation
  Dublin, Ir eland
- Year and Date
  2008-07-04
- Data Source
  KAKENHI-PROJECT-19560020
[Presentation] Anomalous enhancement of the local dielectric constant near defects in SiO22008
- Author(s)
  S. Wakui, J. Nakamura, A. Natori
- Organizer
  14th International Conference on Solid Films and Surface(ICSFS-14)
- Place of Presentation
  ダブリン,アイルランド
- Year and Date
  2008-07-01
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] SiO2薄膜中の欠陥近傍における局所誘電率の異常増大2008
- Author(s)
  涌井貞一、中村淳、名取晃子
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  船橋(千葉)
- Data Source
  KAKENHI-PROJECT-19560020
[Presentation] Polytype dependence on permittivity of SiC2008
- Author(s)
  J. Nakamura, Y. Iwasaki, S. Wakui, A. Natori
- Organizer
  ICSFS-14
- Place of Presentation
  ダブリン,アイルランド
- Year and Date
  2008-07-03
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] HfO2超薄膜の誘電特性2008
- Author(s)
  涌井貞一, 中村淳, 名取晃子
- Organizer
  第28回表面科学学術講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2008-11-15
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] ナノスケールの摩擦機構:ティップサイズ効果2008
- Author(s)
  五十嵐正典、中村淳、名取晃子
- Organizer
  日本物理学会第63回年次大会
- Place of Presentation
  近畿大学
- Data Source
  KAKENHI-PROJECT-18540313
[Presentation] Atomic-scale friction of nanometer-sized cantacts2008
- Author(s)
  M. Igarashi, J. Nakamura, A. Natori
- Organizer
  14^<th> Int. Conf. on Solid Films and Surfaces
- Place of Presentation
  Dublin
- Year and Date
  2008-06-30
- Data Source
  KAKENHI-PROJECT-18540313
[Presentation] ナノスケールの摩擦機構 : ティップサイズ効果2008
- Author(s)
  五十嵐正典、中村淳、名取晃子
- Organizer
  日本物理学会2008年春季大会
- Place of Presentation
  近畿大学
- Year and Date
  2008-03-25
- Data Source
  KAKENHI-PROJECT-18540313
[Presentation] First- principles evaluation of the polytype-dependence of the local dielectric constant for SiC2008
- Author(s)
  K. Sato, Y. Iwasaki, S. Wakui, J. Nakamura, A. Natori
- Organizer
  ISSS-5
- Place of Presentation
  早稲田大学
- Year and Date
  2008-11-12
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] Dielectric discontinuity at surfaces and interfaces : a first-principles approach2008
- Author(s)
  J. Nakamura
- Organizer
  International Conference on Nano Science and Technology (ICN+T 2008)
- Place of Presentation
  Colorado, USA
- Year and Date
  2008-07-22
- Data Source
  KAKENHI-PROJECT-19560020
[Presentation] SiO2薄膜中の欠陥近傍における局所誘電率の異常増大2008
- Author(s)
  涌井貞一、中村淳、名取晃子
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日大船橋
- Data Source
  KAKENHI-PROJECT-19026004
[Presentation] Atomic scale friction of nanometer-sized contacts2008
- Author(s)
  M.Igarashi, J.Nakamura, A.Natori
- Organizer
  14^<th> Int. Conf. on Solid Films and Surfaces
- Place of Presentation
  Dublin
- Year and Date
  2008-06-30
- Data Source
  KAKENHI-PROJECT-18540313
[Presentation] SiC結晶多形の誘電率 ; 第一原理計算による積層構造依存性評価2008
- Author(s)
  佐藤耕平, 岩崎雄一, 中村淳, 名取晃子
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大
- Year and Date
  2008-11-15
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] Dielectric properties of the ultra-thin La2O3(0001) film2008
- Author(s)
  Y. Ryosuke, J. Nakamura, A. Natori
- Organizer
  5th International Symposium on Surface Science and Nanotechnology(ISSS-5)
- Place of Presentation
  早稲田大学
- Year and Date
  2008-11-11
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] SiO2/Si(001)界面におけるナノスケール誘電特性の第一原理計算2008
- Author(s)
  涌井貞一、中村淳、名取晃子
- Organizer
  日本物理学会第63回年次大会
- Place of Presentation
  東大阪(大阪)
- Data Source
  KAKENHI-PROJECT-19560020
[Presentation] La2O3(0001)超薄膜の誘電特性2008
- Author(s)
  谷内良亮, 中村淳, 名取晃子
- Organizer
  第28回表面科学学術講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2008-11-15
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] SiO2/Si(001)界面におけるナノスケール誘電特性の第一原理計算2008
- Author(s)
  涌井貞一、中村淳、名取晃子
- Organizer
  物理学会第63回年次大会
- Place of Presentation
  近畿大学
- Data Source
  KAKENHI-PROJECT-19026004
[Presentation] La2O3(0001)超薄膜の誘電特性2008
- Author(s)
  谷内良亮, 中村淳, 名取晃子
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] Dielectric properties of the interface between Si and SiO22008
- Author(s)
  S.Wakui, J.Nakamura, A.Natori
- Organizer
  35th Conf. on the Physics and Semiconductor Interface
- Place of Presentation
  Santa Fe
- Data Source
  KAKENHI-PROJECT-19026004
[Presentation] Dielectric properties of the Interface between Si and SiO22007
- Author(s)
  S. Wakui, J. Nakamura, A. Natori
- Organizer
  5th International Symposium on Control of Semiconductor Interfaces (ISCSI-5)
- Place of Presentation
  八王子(東京)
- Data Source
  KAKENHI-PROJECT-19560020
[Presentation] Nano-scale profile of the dielectric constant near the Si/oxide interface:A first-principles approach2007
- Author(s)
  J.Nakamura, S.Wakui, S.Eguchi, R.Yanai, A.Natori
- Organizer
  212th ECS
- Place of Presentation
  Washington DC
- Data Source
  KAKENHI-PROJECT-19026004
[Presentation] Nano-scale profile of the dielectric constant near the Si/Oxide interface: A first-principles approach2007
- Author(s)
  J. Nakamura, S. Wakui, S. Eguchi, R. Yanai, A. Natori
- Organizer
  212th Electrochemical society (ECS-212)
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-19560020
[Presentation] Mechanism of velocity saturation and lateral resonance in atomic-scale friction2007
- Author(s)
  M.Igarashi, J.Nakamura, A.Natori
- Organizer
  IVC-17/ICSS-13 and ICN+T
- Place of Presentation
  Stockholm
- Year and Date
  2007-07-04
- Data Source
  KAKENHI-PROJECT-18540313
[Presentation] Dielectric properties of the interface between Si and SiO22007
- Author(s)
  S.Wakui, J.Nakamura, A.Natori
- Organizer
  5th Int.Sympo.on Control ofSemiconductor Inter faces
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-19026004
[Presentation] Nano-scale profile of the dielectric constant near the Si/Oxide interface: A first-principles approach2007
- Author(s)
  J. Nakamura, S. Wakui, S. Eguchi, R. Yanai, A. Natori
- Organizer
  212th Electrochemical society (ECS-212)
- Place of Presentation
  Washington D.C., USA
- Year and Date
  2007-10-09
- Data Source
  KAKENHI-PROJECT-19560020
[Presentation] 原子スケール摩擦力の速度飽和機構2006
- Author(s)
  五十嵐正典、中村淳、名取晃子
- Organizer
  日本物理学会2006年秋季大会
- Place of Presentation
  千葉大学
- Year and Date
  2006-09-23
- Data Source
  KAKENHI-PROJECT-18540313
[Presentation] Mechanism of velocity saturation of atomic friction and the dynamical superlubricity at torsional resonance2006
- Author(s)
  M.Igarashi, J.Nakamura, A.Natori
- Organizer
  14^<th> Int. Colloqui. on Scanning Probe Microscopy
- Place of Presentation
  Atagawa
- Year and Date
  2006-12-07
- Data Source
  KAKENHI-PROJECT-18540313

1. NATORI Akiko (50143368)

# of Collaborated Projects: 4 results

# of Collaborated Products: 38 results
2. OHTAKE Akihiro (30267398)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
3. 名取研二 (20241789)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. 佐野伸行 (90282334)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. 山部紀久夫 (10272171)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Nakamura Jun 中村 淳

JUN Nakamura 中村 淳

NAKAMURA Jun 中村 淳

Research Projects

Research Products

Co-Researchers

ホモマテリアルヘテロ界面の周期配列制御によるメタマテリアルの創製Principal Investigator

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Development of the novel ferromagnetic materials by the two-dimensional structure control and clarification of the mechanism of the ferromagnetism for Mn-GaAsPrincipal Investigator

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ナノスケールSiO2/Si界面の局所誘電特性に及ぼす欠陥の影響

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ナノスケールSiO2/Si界面の電子状態と局所誘電特性に及ぼす欠陥の影響

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Atomic-scale dielectric properties at the interface between Si and La-based oxidesPrincipal Investigator

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Mechanism of friction and superlubricity in nanometer-scale contacts

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ナノメータ・スケール集積エレクトロニクスの理論的構築

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Atomistic tunnelig barrier of heteroepitaxial SiO_2/Si(001)

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[Journal Article] Controlled incorporation of Mn in GaAs: Role ofsurface reconstructions2013

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[Journal Article] Magnetic properties of a single molecular layer of MnAs on GaAs(110)2013

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DOI

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[Journal Article] First-principles calculations of the dielectric constant for the GeO2 films2011

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DOI

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[Journal Article] n-plane strain effects on dielectric properties of the HfO2 thin film2009

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[Journal Article] Ballistic thermal conductance of electrons in graphene ribbons2009

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[Journal Article] Band bending effects on scanning tunneling microscope images of subsurface dopants2009

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Nakamura Jun 中村淳

JUN Nakamura 中村淳

NAKAMURA Jun 中村淳