SASA Shigehiko 佐々誠彦

Researcher Number	50278561
Other IDs
External Links
Affiliation (Current)	2022: 大阪工業大学, 工学部, 教授
Affiliation (based on the past Project Information) *help	2010 – 2021: 大阪工業大学, 工学部, 教授 2006 – 2008: 大阪工業大学, 工学部, 教授 1995 – 2001: 大阪工業大学, 工学部, 助教授
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / 電子デバイス・機器工学 / Basic Section 21060:Electron device and electronic equipment-related Except Principal Investigator Electron device/Electronic equipment / Measurement engineering
Keywords	Principal Investigator InAs / AlGaSb / マイクロ波 / SPIN-FET / spin-splitting / テラヘルツ放射 / GaSb/InAs / Terahertz radiation / 酸化亜鉛 / 遮断周波数 … More / ギガヘルツ / 量子効果デバイス / 原子間力顕微鏡(AFM) / AFM酸化 / 単一電子デバイス / タイプII / 原子間力顕微鏡 / 共鳴トンネル / バンド間トンネル / quantum effect devices / atomic force microscope / AFM oxidation / single electron devices / type-II heterostructure / Rashba効果 / spin-slitting / SPIN・FET / spin・splitting / Rashba effect / テラヘルツパルス光源 / インジウムヒ素 / ヘテロ構造 / テラヘルツ波 / ミリ波 / GaSb/InAsヘテロ接合 / フォトデンバー効果 / パルス光源 / terahertz radiation / photo-Dember effect / pulse laser source / pulse light source / GaSb/InAs ヘテロ構造 / heterostructure / Photo-Dember effect … More Except Principal Investigator InAs / インジウムヒ素 / 量子効果 / ヘテロ接合 / バリスティック / トランジスタ / AlGaSb / メゾスコピックデバイス / 擬1次元電子輸送 / インジウム砒素 / メゾスコピック構造 / 1次元電子 / 整流デバイス / AlGaSb ヘテロ構造 / 整流効果 / 量子細線 / 3分岐構造 / 磁気抵抗 / 回路応用 / AIGaSbヘテロ構造 / テラヘルツ波 / 量子ナノ構造 / High-k / 量子ポイントコンタクト / 整流特性 / 化合物半導体 / MOSFET / 半導体ヘテロ構造 / 高誘電率ゲート / 高速・低消費電力素子 / ヘテロ接合トランジスタ / III-V MOSFET / High-kゲート / セルフスイッチングダイオード / 高速・低消費電力 / InAsヘテロ構造 / High-kゲート絶縁膜 / 先端機能デバイス / 計測工学 / 電子デバイス・機器 / テラヘルツ / サブテラヘルツ / ダイオード / ヘテロ構造 / AIGaSb / 負性抵抗 / 検出感度 / AlSb / 量子井戸構造 / lnAs / 二乗検波 / terahertz / sub-terahertz / diode / heterostructure / negative resistance / curvature / ballistic Less

Development of an intense terahertz pulse source using semiconductor heterostructuresPrincipal Investigator
- Principal Investigator
  
  Sasa Shigehiko
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Osaka Institute of Technology
Development of an intense terahertz pulse source using high-quality InAs thin filmsPrincipal Investigator
- Principal Investigator
  
  Sasa Shigehiko
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Osaka Institute of Technology
Development of an ecological and economical urine sensing system for diabetic disease screening
- Principal Investigator
  
  Mitsuaki Yano
- Project Period (FY)
  2012 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Osaka Institute of Technology
Fabrication of new structure transistors using III-V Semiconductors/High-k materials on Si substrates
- Principal Investigator
  
  MAEMOTO TOSHIHIKO
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Osaka Institute of Technology
Development of ZnO-based transistors operated in gigahertzfrequency rangePrincipal Investigator
- Principal Investigator
  
  SASA Shigehiko
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Osaka Institute of Technology
High-sensitive Terahertz technology using semiconductor quantum nanostructures
- Principal Investigator
  
  MAEMOTO Toshihiko
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Osaka Institute of Technology
Fabrication of terahertz detectors based on InAs/AISb/AlGaSb/GaSb heterostructures
- Principal Investigator
  
  INOUE Masataka
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Measurement engineering
- Research Institution
  Osaka Institute of Technology
Developmert of spintronics devices using InAs-based heterostructuresPrincipal Investigator
- Principal Investigator
  
  SASA Shigehiko
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Osaka Institute of Technology
Development of InAs-based quantum-effect devices operative at room temperaturePrincipal Investigator
- Principal Investigator
  
  SASA Shigehiko
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Osaka Institute of Technology
InAs系ヘテロ極微構造における量子輸送現象とデバイス応用
- Principal Investigator
  
  井上正崇
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Osaka Institute of Technology
InAs系ヘテロ極微構造における量子輸送現象とデバイス応用
- Principal Investigator
  
  INOUE Masataka
- Project Period (FY)
  1995
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Osaka Institute of Technology

[Book] 高周波半導体材料・デバイスの新展開(第11編, 第1章 2.InAs系ヘテロ接合デバイスとMBE成長技術)2006
- Author(s)
  佐々誠彦, 井上正崇
- Total Pages
  12
- Publisher
  シーエムシー出版
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Book] 高周波半導体材料・デバイスの新展開2006
- Author(s)
  佐々誠彦, 井上正崇
- Total Pages
  12
- Publisher
  シーエムシー出版
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Development of terahertz optical sources for an excitation wavelength of 1.56 μm2021
- Author(s)
  Daichi Shimada; Ryota Ohashi; Masatoshi Koyama; Toshihiko Maemoto; Shigehiko Sasa; Kosuke Okada; Hironaru Murakami; Masayoshi Tonouchi
- Journal Title
  
  2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
  
  Volume: -
- DOI
  10.1109/irmmw-thz46771.2020.9370373
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K04540, KAKENHI-PROJECT-20K04506, KAKENHI-PROJECT-17K14673
[Journal Article] Impact of optical absorption for THz radiation in GaSb/InAs heterostructures2021
- Author(s)
  R. Ohashi; D. Shimada; M. Koyama; T. Maemoto; S. Sasa; F. Murakami; H. Murakami; M. Tonouchi
- Journal Title
  
  2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
  
  Volume: -
- DOI
  10.1109/irmmw-thz46771.2020.9371009
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K04540, KAKENHI-PROJECT-20K04506, KAKENHI-PROJECT-17K14673
[Journal Article] Study for Enhancement of Terahertz Radiation Using GaSb/InAs Heterostructures2017
- Author(s)
  S. Sasa, Y. Kinoshita, M. Tatsumi, M. Koyama, T. Maemoto, S. Hamauchi, I. Kawayama, and M. Tonouchi
- Journal Title
  
  IOP Conf. Series: J. Phys.
  
  Volume: 906 Pages: 012015-012015
- DOI
  10.1088/1742-6596/906/1/012015
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06326, KAKENHI-PROJECT-16K06327
[Journal Article] Non-destructive carrier concentration determination in InAs thin films for THz radiation generating devices using fast differential reflectance spectroscopy2016
- Author(s)
  Michal, A. Kozub, Marcin Motyka, Mateusz Dyksik, Grzegorz Sek, Jan Misiewicz, Kazuichi Nishisaka, Toshihiko Maemoto, higehiko Sasa
- Journal Title
  
  Optical and Quantum Electronics
  
  Volume: 48
- DOI
  10.1007/s11082-016-0653-4
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06326
[Journal Article] A potentiometric glucose sensing by an enzyme-modified Ta2O5/ZnO/Zn0.6Mg0.4O solution-gate field effect transistor2015
- Author(s)
  K. Iketani, K. Koike, Y. Hirofuji, T. Maemoto, S. Sasa, M. Yano
- Journal Title
  
  IEEE Explore
  
  Volume: IMFEDK2015 Pages: 40-41
- DOI
  10.1109/imfedk.2015.7158539
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24360141
[Journal Article] Characteristics of P-type Semiconducting MgCr2O4-TiO2 Ceramics for Gas Sensing Devices2015
- Author(s)
 矢野満明、平原陽介、寺田二郎、佐々誠彦、大松繁
- Journal Title
 
 IEEJ Trans. SM
 
 Volume: 135 Issue: 8 Pages: 317-322
- DOI
 10.1541/ieejsmas.135.317
- NAID
 130005090448
- ISSN
 1341-8939, 1347-5525
- Language
 Japanese
- Peer Reviewed / Acknowledgement Compliant
- Data Source
 KAKENHI-PROJECT-24360141
[Journal Article] Characteristics of P-type (Zn1-xMgx)Cr2O4-TiO2 Ceramics for Gas-sensing Applications2014
- Author(s)
 寺田二郎、平原陽介、大松繁、佐々誠彦、矢野満明
- Journal Title
 
 IEEJ Trans. SM
 
 Volume: 134巻9号 Issue: 9 Pages: 308-313
- DOI
 10.1541/ieejsmas.134.308
- NAID
 130004684899
- ISSN
 1341-8939, 1347-5525
- Language
 Japanese
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
 KAKENHI-PROJECT-23360175, KAKENHI-PROJECT-24360141
[Journal Article] MgCr2O4-TiO2系P型半導体セラミックスのガス検出特性2014
- Author(s)
  平原陽介，寺田二郎，大松繁，佐々誠彦，矢野満明
- Journal Title
  
  第31回センサ・マイクロマシンと応用システムシンポジウム講演論文集
  
  Volume: なし
- NAID
  130005090448
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24360141
[Journal Article] Zinc Oxide Ion-Sensitive Field-Effect Transistors and Biosensors2014
- Author(s)
  Mitsuaki Yano, Kazuto Koike, Kazuya Mukai, Takayuki Onaka, Yuichi Hirofuji, Kenichi Ogata, Sigeru Omatu, Toshihiko Maemoto, Shiegehiko Sasa
- Journal Title
  
  Physica Status Solidi　（招待論文）
  
  Volume: A211 Pages: 2098-2104
- DOI
  10.1002/pssa.201300589
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-23360175, KAKENHI-PROJECT-24360141
[Journal Article] Characteristics of MoO3 films grown by molecular beam epitaxy2014
- Author(s)
 K. Koike, R. Wada, S. Yagi, Y. Harada, S. Sasa, M. Yano
- Journal Title
 
 Jpn. J. Appl. Phys.
 
 Volume: 53 Issue: 5S1 Pages: 05FJ02-05FJ02
- DOI
 10.7567/jjap.53.05fj02
- NAID
 210000143849
- ISSN
 0021-4922, 1347-4065
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
 KAKENHI-PROJECT-24360141, KAKENHI-PROJECT-25390033
[Journal Article] A potentiometric immunosensor based on a ZnO field-effect transistor2014
- Author(s)
  K. Koike, K. Mukai, T. Onaka, T. Maemoto, S. Sasa, M. Yano
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Issue: 5S1 Pages: 05FF04-05FF04
- DOI
  10.7567/jjap.53.05ff04
- NAID
  210000143833
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24360141
[Journal Article] A reflection layer for enhanced THz radiation from InAs thin films2012
- Author(s)
  K. Nishisaka, T. Maemoto, S. Sasa, K. Takayama, and M. Tonouchi
- Journal Title
  
  Proceedings of the 2012 International Meeting for Future of Electron Devices
  
  Volume: 1 Pages: 116-117
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560422
[Journal Article] 高性能酸化亜鉛系FETと酸化物デバイス用の広がり2012
- Author(s)
  佐々, 矢野, 前元, 小池, 尾形
- Journal Title
  
  電子情報通信学会誌
  
  Volume: 95 (4) Pages: 289-293
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360141
[Journal Article] 高性能酸化亜鉛系FETと酸化物デバイス応用の広がり2012
- Author(s)
  佐々誠彦，矢野満明，前元利彦，小池一歩，尾形健一
- Journal Title
  
  電子情報通信学会誌
  
  Volume: 95-4 Pages: 289-293
- NAID
  110009437460
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560422
[Journal Article] 酸化亜鉛薄膜の放射線耐性2012
- Author(s)
  矢野、小池、佐々、権田、石神、久米,
- Journal Title
  
  機能材料
  
  Volume: 32 (12)(依頼論文) Pages: 4-11
- Data Source
  KAKENHI-PROJECT-24360141
[Journal Article] 室温プロセスによるフレキシブル基板上酸化亜鉛薄膜トランジスタの作製2012
- Author(s)
  木村祐太，日垣友宏，前元利彦，佐々誠彦
- Journal Title
  
  材料
  
  Volume: 61-9 Pages: 760-765
- NAID
  130002084924
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560422
[Journal Article] Rectification effects in ZnO-based transparent self-switching nano-diodes2012
- Author(s)
  Y. Kimura, T. Kiso, T. Higaki, Y. Sun, T. Maemoto, S. Sasa, and M. Inoue
- Journal Title
  
  Proceedings of the 2012 International Meeting for Future of Electron Devices
  
  Volume: 1 Pages: 114-115
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560422
[Journal Article] 室温プロセスによるフレキシブル基板上酸化亜鉛薄膜トランジスタの作製2012
- Author(s)
  木村祐太, 日垣友宏, 前元利彦, 佐々誠彦
- Journal Title
  
  材料
  
  Volume: 61巻9号 Pages: 760-765
- NAID
  130002084924
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560422
[Journal Article] 高性能酸化亜鉛系FETと酸化物デバイス応用の広がり2012
- Author(s)
  佐々誠彦, 矢野満明, 前元利彦, 小池一歩, 尾形健一
- Journal Title
  
  電子情報通信学会誌
  
  Volume: 95巻4号 Pages: 289-293
- NAID
  110009437460
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560422
[Journal Article] Rectification effects in ZnO-based transparent self-switching nano -diodes2012
- Author(s)
  Y. Kimura, T. Kiso, T. Higaki, Y. Sun, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Proceedings of the 2012 International Meeting for Future of Electron Devices Kansai
  
  Volume: 1巻 Pages: 114-115
- Data Source
  KAKENHI-PROJECT-23560422
[Journal Article] A reflection layer for enhanced THz radiation from InAs thin films2012
- Author(s)
  K. Nishisaka, T. Maemoto, S. Sasa, K. Takayama, M. Tonouchi
- Journal Title
  
  Proceedings of the 2012 International Meeting for Future of Electron Devices, Kansai
  
  Volume: 1巻 Pages: 116-117
- Data Source
  KAKENHI-PROJECT-23560422
[Journal Article] 高性能酸化亜鉛系FETと酸化物デバイス応用の広がり2012
- Author(s)
  佐々誠彦,矢野満明,前元利彦,小池一歩,尾形健一
- Journal Title
  
  電子情報通信学会誌
  
  Volume: Vol.95-4 Pages: 289-293
- NAID
  110009437460
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560353
[Journal Article] Effects of post annealing on IZO thin-film transistor characteristics2012
- Author(s)
  R. Morita, T. Maemoto, and S. Sasa
- Journal Title
  
  2012 Int. Mtg. for Future of Electron Devices Kansai (IMFEDK)
  
  Pages: 118-119
- DOI
  10.1109/imfedk.2012.6218610
- Data Source
  KAKENHI-PROJECT-22560353
[Journal Article] 高性能酸化亜鉛系 FET と酸化物デバイス応用の広がり2012
- Author(s)
  佐々誠彦，矢野満明，前元利彦，小池一歩，尾形健一
- Journal Title
  
  電子情報通信学会誌
  
  Volume: 95 Pages: 289-293
- NAID
  110009437460
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560353
[Journal Article] 酸化亜鉛トランジスターの開発とバイオセンサー応用2011
- Author(s)
  矢野満明, 小池一歩, 佐々誠彦, 前元利彦, 井上正崇
- Journal Title
  
  材料
  
  Volume: 60 Pages: 447-456
- NAID
  130000861066
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560353
[Journal Article] Microwave performance of ZnO/ZnMgO heterostructure field effect transistors2011
- Author(s)
  佐々誠彦
- Journal Title
  
  Physica Status Solidi A
  
  Volume: 208 Pages: 449-452
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560353
[Journal Article] Irradiation Effect of 8MeV Protons on Single-Crystalline Zinc Oxide Films2011
- Author(s)
  小池,天野,青木,藤本,佐々,矢野,權田,石神,久米
- Journal Title
  
  J. Soc. Mat. Sci., Japan
  
  Volume: Vol.60 Issue: 11 Pages: 988-993
- DOI
  10.2472/jsms.60.988
- NAID
  130001396966
- ISSN
  0514-5163, 1880-7488
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560353, KAKENHI-PROJECT-22760306
[Journal Article] 単結晶酸化亜鉛薄膜に対する8MeVプロトンの照射効果2011
- Author(s)
  小池, 天野, 青木, 藤本, 佐々, 矢野, 權田, 石神, 久米
- Journal Title
  
  材料
  
  Volume: 60 Pages: 988-993
- NAID
  130001396966
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560353
[Journal Article] Effects of N and P ion-implantation and post-annealing on single-crystalline ZnO films2011
- Author(s)
  T.Aoki, R.Fujimoto, K.Koike, S.Sasa, M.Yano, S.Nagamachi, K.Yoshida
- Journal Title
  
  30th Electronic Materials Sympo
  
  Pages: 287-288
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560353
[Journal Article] Fabrication and Characterization of Antimonide-Based Composite-Channel InAs/AlGaSb HFETs using High-k Gate Insulators2011
- Author(s)
  T. Kiso, H. Yoshikawa, Y. Ishibashi, K. Nishisaka, K. Ogata, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Proceedings of the 2011 International Meeting for Future of Electron Devices
  
  Volume: 1 Pages: 88-89
- Data Source
  KAKENHI-PROJECT-23560422
[Journal Article] Flexible zinc oxide thin-film transistors using oxide buffer layers on polyethylene napthalate Substrates2011
- Author(s)
  T.Higaki, T.Tachibana, Y.Kimura, T.Maemoto, S.Sasa, M.Inoue
- Journal Title
  
  Proc. of Int. Meeting for Future of Electron Devices
  
  Pages: 92-93
- DOI
  10.1109/imfedk.2011.5944860
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22310084, KAKENHI-PROJECT-22560353
[Journal Article] Microwave performance of ZnO/ZnMgO heterostructure field effect transistors2011
- Author(s)
  S. Sasa, T. Maitani, Y. Furuya, T. Amano, K.Koike, M. Yano, and M. Inoue
- Journal Title
  
  Phys. Status Solidi A208
  
  Pages: 449-452
- DOI
  10.1002/pssa.201000509
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560353
[Journal Article] Radiation-proof characteristic of ZnO/ZnMgO HFETs2011
- Author(s)
  T.Yabe, T.Aoki, T.Higashiyama, K.Koike, S.Sasa, M.Yano, S.Gonda, R.Ishigami, K.Kume
- Journal Title
  
  Proc.of International Meeting for Future of Electron Devices
  
  Pages: 90-91
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560353
[Journal Article] Radiation-proof characteristic ofZnO/ZnMgO HFETs2011
- Author(s)
  T. Yabe, T. Aoki, T. Higashiyama, K. Koike, S. Sasa, M. Yano, S. Gonda, R. Ishigami, K. Kume
- Journal Title
  
  Proc. of Int. Meeting for Future of Electron Devices
  
  Pages: 90-91
- DOI
  10.1109/imfedk.2011.5944859
- Data Source
  KAKENHI-PROJECT-22560353
[Journal Article] Development of ZnO Transistors and Their Application to Bio-Sensors2011
- Author(s)
  矢野満明, 小池一歩, 佐々誠彦, 前元利彦, 井上正崇
- Journal Title
  
  J. Soc. Mat. Sci., Japan
  
  Volume: 60-5 Issue: 5 Pages: 447-456
- DOI
  10.2472/jsms.60.447
- NAID
  130000861066
- ISSN
  0514-5163, 1880-7488
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22310084, KAKENHI-PROJECT-22560353, KAKENHI-PROJECT-22760306
[Journal Article] 水溶液プロセスによる酸化亜鉛ナノロッドの製作とバイオセンサへの応用2011
- Author(s)
  尾形, 土橋, 小池, 佐々, 井上, 矢野
- Journal Title
  
  材料
  
  Volume: 60 Pages: 976-982
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560353
[Journal Article] Irradiation effect of 8 MeV protons on single-crystalline zinc oxide2011
- Author(s)
  T. Aoki, R. Fujimoto, K. Koike, S. Sasa, M.Yano, S. Gonda, R. Ishigami, and K. Kume
- Journal Title
  
  Proc. of Int. Meeting for Future of Electron Devices
  
  Pages: 88-89
- DOI
  10.1109/imfedk.2011.5944858
- Data Source
  KAKENHI-PROJECT-22560353
[Journal Article] Fabrication and Characterization of Antimonide-Based Composite-Channel InAs/AlGaSb HFETs using High-k Gate Insulator2011
- Author(s)
  T. Kiso, H.Yoshikawa, Y. Ishibashi, K. Nishisaka, K. Ogata, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Proceedings of the 2011 International Meeting for Future of Electron Devices, Kansai
  
  Volume: 1巻 Pages: 88-89
- Data Source
  KAKENHI-PROJECT-23560422
[Journal Article] Growth of Zinc Oxide Nanorods Via Aqueous Solution Process and Their Application for Biosensors2011
- Author(s)
  尾形,土橋,小池,佐々,井上,矢野
- Journal Title
  
  J. Soc. Mat. Sci., Japan
  
  Volume: Vol.60 Issue: 11 Pages: 976-982
- DOI
  10.2472/jsms.60.976
- NAID
  130001396964
- ISSN
  0514-5163, 1880-7488
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560353, KAKENHI-PROJECT-22760306
[Journal Article] Effects of N and P ion-implantation and post-annealing on single-crystalline ZnO films2011
- Author(s)
  T. Aoki, R. Fujimoto, K. Koike, S. Sasa, M.Yano, S. Nagamachi, and K. Yoshida
- Journal Title
  
  30th Electronic Materials Symposium
  
  Pages: 287-288
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560353
[Journal Article] Irradiation effect of 8MeV protons on single-crystalline zinc oxide2011
- Author(s)
  T.Aoki, R.Fujimoto, K.Koike, S.Sasa, M.Yano, S.Gonda, R.Ishigami, K.Kume
- Journal Title
  
  Proc.of International Meeting for Future of Electron Devices
  
  Pages: 88-89
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560353
[Journal Article] Flexible zinc oxide thin-film transistors using oxide buffer layers on polyethylene napthalate Substrates2011
- Author(s)
  T.Higaki, T.Tachibana, Y.Kimura, T.Maemoto, S.Sasa, M.Inoue
- Journal Title
  
  Proc.of International Meeting for Future of Electron Devices
  
  Pages: 92-93
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560353
[Journal Article] Electron transport properties in InAs four-terminal ballistic junctions under weak magnetic fields2009
- Author(s)
  M. Kovama, K. Fujiwara, N. Amano, T. Maemoto, S. Sasa, M. lnoue
- Journal Title
  
  phys. stat. sol. (c) (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560361
[Journal Article] Nonlinear electron transport properties in InAs/AIGaSb three-terminal ballistic junctions2008
- Author(s)
  M. Koyama, T. Inoue, N. Amano, K. Fujiwara, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Technical report of IEICE. Vol.107, No.473-474
  
  Pages: 29-32
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Nonlinear Electron Transport Properties in InAs/AlGaSb Three-Terminal Ballistic Junctions2008
- Author(s)
  M. Koyama, T. Inoue, N. Amano, T.Maemoto, S. Sasa, and M. Inoue,
- Journal Title
  
  J. of Physics: Conf. Ser. 109 012023
  
  Pages: 1-3
- NAID
  110006613703
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560361
[Journal Article] Nonlinear Electron "Transport Properties and Rectification Effects in InAs/AlGaSb Ballistic Devices"2008
- Author(s)
  M. Koyama, T. Inoue, N. Amano, T. Maemoto,S. Sasa, and M. Inoue
- Journal Title
  
  phys. Stat. sol. c 5
  
  Pages: 107-110
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560361
[Journal Article] InAs/AlGaSb HEMTs with Al_2O_3 and HfO_2 Gate Insulators2008
- Author(s)
  K. Fuiiwara, N, Amano, M. Koyama, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Proc. of the 2008 International Meeting for Future of Electron Devices, Kansai
  
  Pages: 73-74
- Data Source
  KAKENHI-PROJECT-19560361
[Journal Article] Nonlinear electron transport in InAs/AlGaSb three-terminal ballistic junctions2008
- Author(s)
  M Koyama, T Inoue, N Amano, T Maemoto, S Sasa and M.Inoue
- Journal Title
  
  Journal of Phys 109
  
  Pages: 120231-4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Nonlinear Electron Transport Properties in InAs/AIGaSb Three-Terminal Ballistic Junctions2008
- Author(s)
  M.Koyama, T.Inoue, N.Amano, T.Maemoto, S.Sasa and M.Inoue
- Journal Title
  
  J.of Physics:Conf.Ser. 109
  
  Pages: 12023-12026
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Nonlinear Electron Transport Properties in InAs/AlGaSb Three-Terminal Ballistic Junctions2008
- Author(s)
  M. Koyama, T. Inoue, N. Amano, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  J. of Physics : Conf. Ser. 109
  
  Pages: 12023-12023
- NAID
  110006613703
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560361
[Journal Article] Nonlinear Electron Transport Properties and Rectification Effects in lnAsIAlGaSb Ballistic Devices2008
- Author(s)
  M. Koyama, T. Inoue, N. Amano, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Phys. Stat. Sol.(c) 5
  
  Pages: 107-110
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Nonlinear Electron Transport Properties and Rectification Effects in InAs/AIGaSb Ballistic Devices2008
- Author(s)
  M.Koyama, T.Inoue, N.Amano, T.Maemoto, S.Sasa and M.Inoue
- Journal Title
  
  Phys.Stat.Sol.(c) 5
  
  Pages: 107-110
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] InAs/AlGaSb HEMTs with Al_2O_3 and HfO_<2 >Gate Insulators2008
- Author(s)
 K. Fujiwara, N, Amano, M. Koyama, T.Maemoto, S. Sasa, and M. Inoue,
- Journal Title
 
 Proc. Of the 2008 International Meeting for Future of Electron Devices, Kansai c
 
 Pages: 73-74
- Data Source
 KAKENHI-PROJECT-19560361
[Journal Article] Nonlinear Electron Transport Properties in lnAs/AlGaSb Three-Terminal Ballistic Junctions2008
- Author(s)
  M. Koyama, T. Inoue, N. Amano, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  J. of Physics: Conf. Ser. 109
  
  Pages: 12023-12026
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Nonlinear Electron Transport Properties and Rectification Effects in InAs/AIGaSb Ballistic Devices2008
- Author(s)
  M. Kovama, T. lnoue, N. Amano, T. Maemoto, S. Sasa, M. lnoue
- Journal Title
  
  phys. stat. sol. (c) 5
  
  Pages: 107-110
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560361
[Journal Article] Field characteristjcs of eiectron mobility and velocity in lnAs/AlGaSb HFETs with high-kgate insulators2007
- Author(s)
  T.Maemoto, M.Koyama, H.Takahashi, S.Sasa, and M.Inoue
- Journal Title
  
  American Inst.of Phys.Conf.Proc 893
  
  Pages: 1391-1392
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560361
[Journal Article] Ballistic rectification effects in lnAs/AlGaSb nanostructures2007
- Author(s)
  M. Koyama, H. Takahashi, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  AlP conference proceeding 893
  
  Pages: 577-578
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Investigation of Sb-Based Diode Structures for Detecting Subterahertz Waves2007
- Author(s)
  T. lnoue, N. Amano, M. Koyama, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Memoirs of the Osaka Inst. of Tech, Ser, A 52
  
  Pages: 25-30
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Field characteristics of electron mobility and veloclty in InAs/AlGaSb HFETs with high-kgate insulators2007
- Author(s)
  T.Maemoto, M.Koyama, H.Takahashi, S.Sasa, and M.Inoue
- Journal Title
  
  American Inst.of Phys.Conf.Proc 893
  
  Pages: 1391-1392
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Improved Stability of High-Performance ZnO/ZnMgO Hetero.MISFETs2007
- Author(s)
  S.Sasa, T.Hayafuji, M.Kawasaki, K.Koike, M.Yano, M.Inoue
- Journal Title
  
  Electron Device Letters, IEEE 28
  
  Pages: 543-545
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Ballistic rectification effects in InAs/AlGaSb nanostructures2007
- Author(s)
  M.Koyama, H.Takahashi, T.Maemoto, S.Sasa, and M.Inoue
- Journal Title
  
  American Inst.of Phys.Conf.Proc 893
  
  Pages: 577-578
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560361
[Journal Article] Ballistic rectification effects in InAs/AIGaSb nanostructures2007
- Author(s)
  M.Koyama, H.Takahashi, T.Maemoto, S.Sasa, and M.Inoue
- Journal Title
  
  American Inst.of Phys.Conf.Proc 893
  
  Pages: 577-578
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Field characteristics of electron mobility and velocity in InAs/AIGaSb HFETs with high-k gate insulators2007
- Author(s)
  T. Maemoto, M. Koyama, H. Takahashi, S. Sasa, M. Inoue
- Journal Title
  
  AlP conference proceeding 893
  
  Pages: 1391-1392
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Fabrication and characterization of Sb-based diode structures for detecting subterahertz waves2007
- Author(s)
  H. Takahashi, T. lnoue, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Memoirs of the Osaka Inst. of Tech, Ser. A 51
  
  Pages: 15-19
- NAID
  110006162463
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Ballistic transport and rectification effects in lnAs/AlGaSb mesoscopic stricture2007
- Author(s)
  M. Koyama, H. Takahashi, T. Inoue, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Technical report of IEICE. Vol.106, No.520-521
  
  Pages: 67-71
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Fabrication and characterization of Sb-based diode structures for detecting subterahertzwaves2007
- Author(s)
  H.Takahashi, T.Inoue, T.Maemoto, S.Sasa and M.Inoue
- Journal Title
  
  Proc. of the 2007 International Meeting for Future of Electron Devices 5
  
  Pages: 81-82
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] High-Performance ZnO/ZnMgO Field-Effect Transistors using a Hetero-Metal-Insulator-Semiconductor Structure2006
- Author(s)
  S.Sasa, M.Ozaki, K.Koike, M.Yano, M.Inoue
- Journal Title
  
  Appl.Phys.Lett. vol.89
  
  Pages: 53502-53504
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Fabrication and characterization of Sb-based diode structures for detecting subterahertz waves2006
- Author(s)
  H.Takahashi, T.Inoue, T.Maemoto, S.Sasa, M.Inoue
- Journal Title
  
  Memories of the Osaka Institute of Technology,Series A Vol.51
  
  Pages: 15-19
- NAID
  110006162463
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Nonlinear electron transport properties in InAs/AIGaSb ballistic rectifiers2006
- Author(s)
  M. Koyama, H. Takahashi, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Proc. of Int. Mtg. on Future Electron Devices Kansai 2006
  
  Pages: 85-86
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Fabrication and Characterization of InAs Mesoscopic Devices2006
- Author(s)
  M.Koyama, M.Furukawa, H.Ishii, M.Nakai, T.Maemoto, S.Sasa, M.Inoue
- Journal Title
  
  Springer Proceedings in Physics Vol.110
  
  Pages: 7-10
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Electron transport in InAs field effect and mesoscopic devices2006
- Author(s)
  M.Koyama, M.Furukawa, T.Maemoto, S.Sasa, M.Inoue
- Journal Title
  
  Proc.of 12th Int.Conf.on Narrow Gap Semicond.,Inst.Phys.Conf.Ser. Vol.187
  
  Pages: 445-449
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Electron transport in InAs/AlGaSb ballistic rectifiers2006
- Author(s)
  T.Maemoto, M.Koyama, M.Furukawa, H.Takahashi, S.Sasa, M.Inoue
- Journal Title
  
  Journal of Physics Conference Series Vol.38
  
  Pages: 112-115
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Nonlinear electron Transport properties in InAs/AlGaSb Ballistic Rectifiers2006
- Author(s)
  M.Koyama, H.Takahashi, T.Maemoto, S.Sasa, M.Inoue
- Journal Title
  
  Proc. of the 2006 International Meeting for Future of Electron Devices,Kansai
  
  Pages: 85-86
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Fabrication and characterization of Sb-based diode structures for detecting subterahertz waves2006
- Author(s)
  H. Takahashi, T. lnoue, T. Maemoto, S. Sasa, M. Inoue
- Journal Title
  
  Technical report of IEICE. Vol.106, No.403
  
  Pages: 19-22
- NAID
  110006162463
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Journal Article] Electron transport properties in InAs four-terminal ballistic junctions under weak magnetic fields
- Author(s)
  M. Koyama, K. Fujiwara, N. Amano, T.Maemoto, S. Sasa, and M. Inoue,
- Journal Title
  
  phys. Stat. sol.c 印刷中
  
  Pages: 0-0
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19560361
[Presentation] InGaSb/InAs ヘテロ接合を用いた高強度テラヘルツ放射素子の研究（ II）2022
- Author(s)
  高木善之、長谷川尊之、小山政俊、前元利彦、佐々誠彦
- Organizer
  応用物理学会
- Data Source
  KAKENHI-PROJECT-19K04540
[Presentation] Impact of optical absorption for THz radiation in GaSb/InAs heterostructures2020
- Author(s)
  R. Ohashi; D. Shimada; M. Koyama; T. Maemoto; S. Sasa; F. Murakami; H. Murakami; M. Tonouchi
- Organizer
  2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04540
[Presentation] Nonuniform Carrier Heating Induced Nonlinear Electron Transport Properties in Asymmetrically Necked InAs Mesa Structures2020
- Author(s)
  Ryota Ohashi, Daichi Shimada, Masatoshi Koyama, Toshihiko Maemoto, and Shigehiko Sasa
- Organizer
  238th Meeting of The Electrochemical Society
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04540
[Presentation] Development of terahertz optical sources for an excitation wavelength of 1.56 μm2020
- Author(s)
  Daichi Shimada; Ryota Ohashi; Masatoshi Koyama; Toshihiko Maemoto; Shigehiko Sasa; Kosuke Okada; Hironaru Murakami; Masayoshi Tonouchi
- Organizer
  2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04540
[Presentation] Terahertz Radiation Characteristics of GaSb/InAs Heterostructures2019
- Author(s)
  S. Sasa, R. Ohashi, D. Shimada, M. Koyama, T. Maemoto, I. Kawayama, and M. Tonouchi
- Organizer
  Int. Conf. on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04540
[Presentation] GaSb/InAsヘテロ接合を用いたテラヘルツ波の放射強度増強の検討 II2018
- Author(s)
  巽　雅史，木下耀平，小山政俊，前元利彦，佐々誠彦，寳田智哉，川山　巌，斗内政吉
- Organizer
  第６５回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K06326
[Presentation] Enhanced Terahertz Radiation from GaSb/InAs Heterostructures2018
- Author(s)
  S. Sasa, M. Tatsumi, Y. Kinoshita, M. Koyama, T. Maemoto, I. Kawayama, and M. Tonouchi
- Organizer
  43 rd Int. Conf. on Infrared, Millimeter and Terahertz Waves 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06326
[Presentation] GaSb/InAsヘテロ接合を用いたテラヘルツ波の放射強度増強の検討 II2018
- Author(s)
  巽雅史，木下耀平，小山政俊，前元利彦，佐々誠彦，寶田智哉，川山巌，斗内政吉
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K06326
[Presentation] GaSb/InAsヘテロ接合を用いたテラヘルツ波の放射強度増強の検討2017
- Author(s)
  木下耀平，巽雅史，小山政俊，前元利彦，佐々誠彦，濱内翔太，川山巌，斗内政吉
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜，神奈川県
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-16K06326
[Presentation] GaSb/InAsヘテロ接合を用いたテラヘルツ放射素子の検討2017
- Author(s)
  木下耀平，巽雅史，小山政俊，前元利彦，佐々誠彦，寳田智哉，川山巌，斗内政吉
- Organizer
  材料学会平成29年度第３回半導体エレクトロニクス部門委員会第２回研究会
- Data Source
  KAKENHI-PROJECT-16K06326
[Presentation] Glucose sensing by an enzyme-modified ZnO-based FET2016
- Author(s)
  M. Yano, Y. Mori, S. Sasa, Y. Hirofuji, K. Koike
- Organizer
  30th EUROSENSORS
- Place of Presentation
  Budapest, Hungary
- Year and Date
  2016-09-05
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24360141
[Presentation] A potentiometric glucose sensor based on an enzyme-modified Ta2O5/ZnO/ZnMgO solution-gate field-effect transistor2015
- Author(s)
  K. Iketani, K. Koike, Y. Hirofuji, T. Maemoto, S. Sasa, M. Yano
- Organizer
  13th Int. Mtg. for Future of Electron Devices, Kansai
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2015-06-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24360141
[Presentation] ゾルゲル成膜したZnO薄膜の乾燥温度依存性とTFTへの応用2015
- Author(s)
  川上祐貴、尾形健一、小山政俊、前元利彦、佐々誠彦
- Organizer
  日本材料学会平成27年度半導体エレクトロニクス部門第2回研究会
- Place of Presentation
  京都大学桂キャンパス、京都市
- Year and Date
  2015-11-21
- Data Source
  KAKENHI-PROJECT-24360141
[Presentation] MgCr2O4-TiO2系Ｐ型半導体セラミックスのガス検出特性2014
- Author(s)
  平原陽介，寺田二郎，大松繁，佐々誠彦，矢野満明
- Organizer
  日本材料学会半導体エレクトロニクス部門，平成26年度第2回研究会
- Place of Presentation
  神戸大学
- Year and Date
  2014-11-08
- Data Source
  KAKENHI-PROJECT-24360141
[Presentation] InAs/AlGaSbヘテロ構造の分子線エピタキシャル成長と高誘電率ゲート材料を用いたHFETの製作2013
- Author(s)
  森口航平，西坂和一，前元利彦，尾形健一，佐々誠彦
- Organizer
  2013年春季第60回応用物理学会学術講演会
- Place of Presentation
  神奈川工科大学，神奈川
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Rectification effects in ZnO-based self-switching nanodiodes toward transparent flexible electronics2013
- Author(s)
 T. Maemoto, Y. Kimura, Y.Sun, S., S. Sasa
- Organizer
 18^<th> International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures
- Place of Presentation
 Matsue, Shimane, Japan
- Year and Date
 2013-07-22
- Data Source
 KAKENHI-PROJECT-23560422
[Presentation] InAs/AlGaSbヘテロ構造の分子線エピタキシャル成長と高誘電率ゲート材料を用いたHFETの製作2013
- Author(s)
  森口航平, 西坂和一, 前元利彦, 尾形健一, 佐々誠彦
- Organizer
  2013年春期第60回応用物理学会学術講演会
- Place of Presentation
  神奈川県厚木市
- Year and Date
  2013-03-29
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] 新対向ターゲット式スパッタ法によるTa205/Zn0 : Inヘテロ構造膜の作製と高感度pHセンサーへの応用2013
- Author(s)
  向井、大仲、小池、前元、佐々、矢野、門倉、中光
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学、神奈川県
- Year and Date
  2013-03-28
- Data Source
  KAKENHI-PROJECT-24360141
[Presentation] Crystal growth of InAs/AlGaSb heterostructures by molecular beam epitaxy and fabrication of InAs HFETs using Ni/Au alloy ohmic metal2013
- Author(s)
  K. Moriguchi, T.Maemoto, K. Ogata, S.Sasa
- Organizer
  2013 International Conference on Solid State Devices and Materials
- Place of Presentation
  Fukuoka, Japan
- Year and Date
  2013-09-26
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Pulsed laser deposition of low resistivity transparent conducting Al-doped ZnO films at room temperature and its transparent thin-film transistor applications2013
- Author(s)
 Y. Sun, Y. Kimura, T. Maemoto, S. Sasa
- Organizer
 12^<th> International Conference on Laser Ablation
- Place of Presentation
 Ischia, Italy
- Year and Date
 2013-10-08
- Data Source
 KAKENHI-PROJECT-23560422
[Presentation] 高誘電率ゲート材料を用いたInAs/AlGaSbヘテロ構造トランジスタの作製と半導体/ゲート界面の改善2013
- Author(s)
  森口航平, 前元利彦, 尾形健一, 佐々誠彦
- Organizer
  平成25年電気関係学会関西連合大会
- Place of Presentation
  大阪府寝屋川市
- Year and Date
  2013-11-16
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Electron transport properties in self switching nano-diodes2012
- Author(s)
  T. Kiso, K. Nishisaka, T. Maemoto, S. Sasa, S. Kasai, M. Inoue
- Organizer
  APS March meeting 2012
- Place of Presentation
  Boston, Massachusetts, USA
- Year and Date
  2012-02-29
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Microwave Performance ofZnO/ZnMgO HFETs2012
- Author(s)
  S. Sasa
- Organizer
  Int. Symp. onCompound Semiconductors
- Place of Presentation
  Takamatsu
- Year and Date
  2012-06-02
- Data Source
  KAKENHI-PROJECT-22560353
[Presentation] Effects of post annealing on IZO thin-film transistor characteristics2012
- Author(s)
  R. Morita, T. Maemoto, and S. Sasa
- Organizer
  2012 Int. Mtg. for Future of Electron Devices, Kansai (IMFEDK)
- Place of Presentation
  Osaka
- Year and Date
  2012-05-10
- Data Source
  KAKENHI-PROJECT-22560353
[Presentation] Electron transport properties in self switching nano-diodes2012
- Author(s)
  T. Kiso, K. Nishisaka, T. Maemoto, S. Sasa, S. Kasai, M. Inoue
- Organizer
  APS March Meeting 2012
- Place of Presentation
  ボストンコンベンションセンター（アメリカ）
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] 分子線エピタキシー法によるInAs/AlGaSbヘテロ構造の結晶成長と高誘電率ゲート材料を用いた電界効果トランジスタの作製2012
- Author(s)
  森口航平, 西坂和一, 前元利彦, 佐々誠彦, 井上正崇
- Organizer
  平成24年電気関係学会関西連合大会
- Place of Presentation
  大阪府吹田市
- Year and Date
  2012-11-09
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Rectification effects in ZnO-based transparent self-switching nano-diodes2012
- Author(s)
  Y. Kimura, T. Kiso, T. Higaki, Y. Sun, T. Maemoto, S. Sasa, and M. Inoue
- Organizer
  2012 Int. Mtg. for Future of Electron Devices, Kansai (IMFEDK)
- Place of Presentation
  Kansai University Centenary Memorial Hall, Osaka, Japan
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] 分子線エピタキシー法によるInAs/AlGaSbヘテロ構造の結晶成長と高誘電率ゲート材料を用いた電界効果トランジスタの作製2012
- Author(s)
  森口航平，西坂和一，前元利彦，佐々誠彦，井上正崇
- Organizer
  平成24年電気関係学会関西連合大会
- Place of Presentation
  関西大学100周年記念会館，大阪
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] フレキシブル酸化亜鉛透明薄膜トランジスタの開発2012
- Author(s)
  孫屹,木村祐太,前元利彦,佐々誠彦
- Organizer
  電気材料技術懇談会
- Place of Presentation
  大阪
- Year and Date
  2012-07-12
- Data Source
  KAKENHI-PROJECT-22560353
[Presentation] Rectification effects in ZnO-based transparent self-switching nano-diodes2012
- Author(s)
  Y. Kimura, T. Kiso, T. Higaki, Y. Sun, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  2012 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Suita, Osaka, Japan
- Year and Date
  2012-05-10
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Rectification Effects of ZnO-based Transparent Nano-diodes on Glass and Flexible Plastic Substrates2012
- Author(s)
  Y. Kimura, Y. Sun, T. Maemoto, S. Sasa , S. Kasai and M. Inoue
- Organizer
  25th International Microprocesses and Nanotechnology Conference
- Place of Presentation
  Kobe Meriken Park Oriental Hotel, Kobe, Japan
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] 新対向ターゲット式スパッタ法による単結晶ZnO薄膜のエピタキシャル成長2012
- Author(s)
  田辺、向井、小池、前元、佐々、矢野、門倉、中光
- Organizer
  第73回応用物理学会秋季学術講演会
- Place of Presentation
  愛媛大学、愛媛県
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-24360141
[Presentation] A reflection layer for enhanced THz radiation from InAs thin films2012
- Author(s)
  K. Nishisaka, T. Maemoto, S. Sasa, K. Takayama, and M. Tonouchi
- Organizer
  2012 Int. Mtg. for Future of Electron Devices, Kansai (IMFEDK)
- Place of Presentation
  Kansai University Centenary Memorial Hall, Osaka, Japan
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] A reflection layer for enhanced THz radiation from InAs thin films2012
- Author(s)
  K. Nishisaka, T. Maemoto, S. Sasa, K. Takayama, M. Tonouchi
- Organizer
  2012 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Suita, Osaka, Japan
- Year and Date
  2012-05-10
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Rectification Effects of ZnO-based Transparent Nano-diodes on Glass and Flexible Plastic Substrates2012
- Author(s)
 Y. Kimura, Y. Sun, T. Maemoto, S. Sasa, S. Kasai, M. Inoue
- Organizer
 25^<th> International Microprocess and Nanotechnology Conference
- Place of Presentation
 Kobe, Hyogo, Japan
- Year and Date
 2012-10-31
- Data Source
 KAKENHI-PROJECT-23560422
[Presentation] Fabrication and transport properties in InAs-based self switching nano-diodes2011
- Author(s)
  T. Kiso, K. Nishisaka, T. Maemoto, S. Sasa, S. Kasai, M. Inoue
- Organizer
  24th Int. Microprocesses and Nanotechnology Conference
- Place of Presentation
  ANAホテル京都（京都府）
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Fabrication and Characterization of Antimonide-Based Composite-Channel InAs/AlGaSb HFETs using High-k Gate Insulators2011
- Author(s)
  T. Kiso, H. Yoshikawa, Y. Ishibashi, K. Nishisaka, K. Ogata, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  Proceedings of the 2011 International Meeting for Future of Electron Devices
- Place of Presentation
  関西大学（大阪府）
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Zinc oxide-based biosensors2011
- Author(s)
 M.Yano, K.Koike, K.Ogata, T.Nogami, S.Tanabe, S.Sasa
- Organizer
 16^<th> Semiconducting and insulating Materials Conference (SIMC)
- Place of Presentation
 Stockholm, Sweden
- Year and Date
 2011-06-22
- Data Source
 KAKENHI-PROJECT-22560353
[Presentation] Fabrication and Characterization of Antimonide-Based Composite-Channel InAs/AlGaSb HFETs using High-k Gate Insulator2011
- Author(s)
  T. Kiso, H.Yoshikawa, Y. Ishibashi, K. Nishisaka, K. Ogata, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  2011 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Suita, Osaka, Japan
- Year and Date
  2011-05-19
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Fabrication and transport properties in InAs-based self switching nano-diodes2011
- Author(s)
 T. Kiso, K. Nishisaka, T. Maemoto, S. Sasa, S. Kasai, M. Inoue
- Organizer
 24^<th> Int. Microprocesses and Nanotechnology Conference
- Place of Presentation
 Kyoto, Japan
- Year and Date
 2011-10-26
- Data Source
 KAKENHI-PROJECT-23560422
[Presentation] Microwave Performance of ZnO/ZnMgO HFETs2010
- Author(s)
  佐々誠彦
- Organizer
  Int.Symp.on Compound Semiconductors
- Place of Presentation
  高松シンボルタワー(高松市)(招待講演)
- Year and Date
  2010-06-02
- Data Source
  KAKENHI-PROJECT-22560353
[Presentation] 高誘電率材料を用いたInAs/AlGaSb HEMT の作製と評価2008
- Author(s)
  藤原健司,塩路真広,天野直樹,小山政俊,前元利彦,佐々誠彦,井上正崇
- Organizer
  2008 年秋季第70 回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-19560361
[Presentation] Fabrication and characterization of InAs/AlGaSb HEMTs with high-k gate insulators2008
- Author(s)
  T. Maemoto, K. Fujiwara, T. Inoue, N. Amano, M. Koyama, S. Sasa, M. Inoue
- Organizer
  APS March Meeting 2008
- Place of Presentation
  New Orleans, USA
- Year and Date
  2008-03-12
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] Electron transport properties in InAs four-terminal ballistic junctions under weak magnetic fields2008
- Author(s)
  M. Koyama, K. Fujiwara, N. Amano, T. Maemoto, S. Sasa, M. Lnoue
- Organizer
  34th International Symposium on Compound Semiconductors
- Place of Presentation
  Rust, Germany
- Year and Date
  2008-09-23
- Data Source
  KAKENHI-PROJECT-19560361
[Presentation] 高誘電率材料を用いたInAs/AIGaSb HEMTの作製と評価2008
- Author(s)
  藤原健司, 塩路真広, 天野直樹, 小山政俊, 前元利彦, 佐々誠彦, 井上正崇
- Organizer
  2008年秋季第70回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-19560361
[Presentation] InAs/AlGaSb HEMTs with Al_2O_3 and HfO_2 Gate Insulators2008
- Author(s)
  K. Fujiwara, N, Amano, M. Koyama, T.Maemoto, S. Sasa, and M. Inoue
- Organizer
  2008 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  大阪大学中ノ島センター
- Year and Date
  2008-05-02
- Data Source
  KAKENHI-PROJECT-19560361
[Presentation] Electron transport properties in InAs four-terminal ballistic junctions under weak magnetic fields2008
- Author(s)
  M. Koyama, K. Fujiwara, N. Amano, T.Maemoto, S. Sasa, and M. Inoue
- Organizer
  34th International Symposium on Compound Semiconductors
- Place of Presentation
  Rust,Germany
- Year and Date
  2008-09-23
- Data Source
  KAKENHI-PROJECT-19560361
[Presentation] Nonlinear Electron Transport properties in lnAs/AlGaSb Three-Terminal Ballistic Junctions2007
- Author(s)
  M.Koyama, T.Inoue, N.Amano, T.Maemoto, S.Sasa, and M.Inoue
- Organizer
  International Symposium on Advanced Nanodevices and Nanotechnology 2007
- Place of Presentation
  Waikaloa,Hawaii,USA
- Year and Date
  2007-12-06
- Data Source
  KAKENHI-PROJECT-19560361
[Presentation] Fabrication and characterization of Sb-based diode structures for detecting subterahertz waves2007
- Author(s)
  H. Takahashi, T. Inoue, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  Int. Mtg. on Future Electron Devices Kansai 2007
- Place of Presentation
  Osaka Univ., Japan
- Year and Date
  2007-04-24
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] Ballistic rectification in four-terminal InAs/AlGaSb nanostructures2007
- Author(s)
  M. Koyama, H. Takahashi, T. Inoue, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  APS March Meeting 2007
- Place of Presentation
  Denver, USA
- Year and Date
  2007-03-07
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] Nonlinear Electron Transport Properties and Rectification Effects in InAs/AlGaSb Ballistic Devices2007
- Author(s)
  M. Koyama, T. lnoue, N. Amano, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  15th Int. Conf. on Nonequilibrium Carrier Dynamics in Semiconductors
- Place of Presentation
  Tokyo Univ., Japan
- Year and Date
  2007-07-24
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] InAs/AlGaSb量子細線を有するT字型3分岐構造における電子輸送特性2007
- Author(s)
  小山政俊, 中島貴史, 井上達也, 天野直樹, 前元利彦, 佐々誠彦, 井上正崇
- Organizer
  2007年秋季第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学,北海道
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-19560361
[Presentation] Fabrication and Characrerization of Sb-Based Diode structures for Detecting Subterahertz Waves2007
- Author(s)
  T.Inoue, H.Takahashi, T.Maemoto, S.Sasa and M.Inoue
- Organizer
  2007 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Osaka,Japan
- Year and Date
  2007-04-24
- Data Source
  KAKENHI-PROJECT-19560361
[Presentation] Fabrication and Characterization of Sb-Based Diode structures for Detecting Subterahertz Waves2007
- Author(s)
  T.Inoue, H.Takahashi, T.Maemoto, S.Sasa and M.Inoue
- Organizer
  2007 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Osaka,Japan
- Year and Date
  2007-04-24
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] Nonlinear Electron Transport Properties in InAs/AlGaSb Three-Terminal Ballistic Junctions2007
- Author(s)
  M. Koyama, T. lnoue, N. Amano, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  International Symposium on Advanced Nanodevices and Nanotechnology
- Place of Presentation
  Hawaii, USA
- Year and Date
  2007-12-06
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] Fabrication and characterization of Sb-based diode structures for detecting subterahertz waves(2)2007
- Author(s)
  T. Inoue, H. Takahashi, T. Maemoto, S. Sasa, M. lnoue
- Organizer
  JSAP Annual meeting
- Place of Presentation
  Kanagawa, Japan
- Year and Date
  2007-03-30
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] Field characteristics of electron mobility and velocity in InAs/AlGaSb HFETs with high-k gate insulators2006
- Author(s)
  T. Maemoto, M. Koyama, H. Takahashi, S. Sasa, M. Inoue
- Organizer
  Int. Conf. on Phys. of Semicond.
- Place of Presentation
  Wien, Austria
- Year and Date
  2006-07-29
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] Ballistic Rectification effects in InAs/AlGaSb Nano-structures2006
- Author(s)
  M. Koyama, H. Takahashi, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  Int. Conf. on Phys. of Semicond.
- Place of Presentation
  Wien, Austria
- Year and Date
  2006-07-29
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] Fabricatior and characterization of Sb-based diode structures for detectinc, subterahertz waves2006
- Author(s)
  H. Takahashi, T. Inoue, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  IEICE Technical meetings
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2006-12-08
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] Nonlinear electron transport properties in InAs/AlGaSb ballistic rectifiers2006
- Author(s)
  M. Koyama, H. Takahashi, T. Maemoto, S. Sasa, M. Inoue
- Organizer
  Int. Mtg. on Future Electron Devices Kansai 2006
- Place of Presentation
  Kyoto Univ., Japan
- Year and Date
  2006-04-21
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560421
[Presentation] ZnO溶液ゲート電界効果トランジスタを用いた免疫センサの作製と評価
- Author(s)
  大仲崇之、池谷　謙、広藤裕一、小池一歩、前元利彦、佐々誠彦、矢野満明
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学（相模原市）
- Data Source
  KAKENHI-PROJECT-24360141
[Presentation] ZnO Devices: Current and Future
- Author(s)
  S. Sasa, M. Yano, K. Koike, T. Maemoto, K. Ogata
- Organizer
  Asia Pacific Microwave Conference Workshop 2014
- Place of Presentation
  Sendai
- Year and Date
  2014-11-04 – 2014-11-07
- Invited
- Data Source
  KAKENHI-PROJECT-24360141
[Presentation] Characteristics of MoO3 films grown by molecular beam epitaxy
- Author(s)
  R. Wada, S. Yagi, K. Koike, Y. Harada, S. Sasa, M. Yano
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-24360141
[Presentation] ZnO溶液ゲート電界効果トランジスタを用いたバイオセンサの開発
- Author(s)
  大仲崇之，池谷謙，小池一歩，広藤裕一，前元利彦，佐々誠彦，矢野満明
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24360141
[Presentation] 高誘電率ゲート材料を用いたInAs/AlGaSbヘテロ構造トランジスタの作製と半導体/ゲート界面の改善
- Author(s)
  森口航平，前元利彦，尾形健一，佐々誠彦
- Organizer
  平成25年電気関係学会関西連合大会
- Place of Presentation
  大阪電気通信大学寝屋川キャンパス，大阪府寝屋川市
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Pulsed laser deposition of low resistivity transparent conducting Al-doped ZnO films at room temperature and its transparent thin-film transistor applications
- Author(s)
  Y. Sun, Y. Kimura, T. Maemoto and S. Sasa
- Organizer
  12th International Conference on Laser Ablation
- Place of Presentation
  Hotel Continental, Ischia, Italy
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] MgCr2O4-TiO2系P型半導体セラミックスのガス検出特性
- Author(s)
  平原陽介，寺田二郎，大松繁，佐々誠彦，矢野満明
- Organizer
  第31回センサ・マイクロマシンと応用システムシンポジウム
- Place of Presentation
  松江
- Year and Date
  2014-10-20 – 2014-10-22
- Data Source
  KAKENHI-PROJECT-24360141
[Presentation] Crystal growth of InAs/AlGaSb heterostructures by molecular beam epitaxy and fabrication of InAs HFETs using Ni/Au alloy ohmic metal
- Author(s)
  K. Moriguchi, T. Maemoto, K. Ogata and S. Sasa
- Organizer
  2013 International Conference on Solid State Devices and Materials
- Place of Presentation
  Hilton Fukuoka Sea Hawk, Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] 酸化亜鉛系電界効果トランジスターを用いたグルコースセンサーの作製と評価
- Author(s)
  池谷謙，小池一歩，広藤裕一，前元利彦，佐々誠彦，矢野満明
- Organizer
  第62回応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24360141
[Presentation] Potentiometric immunosensors based on a ZnO field-effect transistor
- Author(s)
  K. Mukai, T. Onaka, K. Koike, T. Maemoto, S. Sasa, M. Yano
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-24360141
[Presentation] Zinc oxide ion-sensitive field-effect transistors and biosensors
- Author(s)
  M. Yano, K. Koike, K. Mukai, T. Onaka, Y. Hirofuji, K. Ogata, S. Omatu, T. Maemoto, S. Sasa
- Organizer
  European Materials Research Society 2013 Fall Meeting
- Place of Presentation
  Warsaw, Poland
- Invited
- Data Source
  KAKENHI-PROJECT-24360141
[Presentation] サファイア基板上にMBE成長したMoO3薄膜の結晶構造評価
- Author(s)
  八木信治、松尾昌幸、小池一歩、原田義之、佐々誠彦、矢野満明、稲葉勝彦
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学（相模原市）
- Data Source
  KAKENHI-PROJECT-24360141
[Presentation] Effects of post annealing on IZO thin-film transistor characteristics
- Author(s)
  R. Morita, T. Maemoto, and S. Sasa
- Organizer
  2012 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  関西大学100周年記念会館（大阪）
- Data Source
  KAKENHI-PROJECT-22560353
[Presentation] フレキシブル酸化亜鉛透明薄膜トランジスタの開発
- Author(s)
  孫屹，木村祐太，前元利彦，佐々誠彦
- Organizer
  電気材料技術懇談会
- Place of Presentation
  大阪市中央電気倶楽部（大阪）
- Data Source
  KAKENHI-PROJECT-22560353
[Presentation] ゾルゲル成膜した酸化亜鉛薄膜の乾燥温度依存性とTFT特性
- Author(s)
  川上祐貴，大東隆文，尾形健一，前元利彦，佐々誠彦
- Organizer
  第62回応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24360141
[Presentation] Rectification effects in ZnO-based self-switching nanodiodes toward transparent flexible electronics
- Author(s)
  T. Maemoto, Y. Kimura, Y. Sun, S. Kasai, and S. Sasa
- Organizer
  18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures
- Place of Presentation
  Shimane Prefectural Convention Center "Kunibiki Messe", Matsue, Japan
- Data Source
  KAKENHI-PROJECT-23560422
[Presentation] Growth of a sputtered Ta2O5/ZnO film and its application to an ion-sensitive field-effect transistor
- Author(s)
  K. Mukai, T. Onaka, K. Koike, T. Maemoto, S. Sasa, M. Yano
- Organizer
  IEEE 2013 Future of Electron Devices, Kansai
- Place of Presentation
  Osaka, Japan
- Data Source
  KAKENHI-PROJECT-24360141

1. INOUE Masataka (20029325)

# of Collaborated Projects: 7 results

# of Collaborated Products: 67 results
2. MAEMOTO Toshihiko (80280072)

# of Collaborated Projects: 4 results

# of Collaborated Products: 96 results
3. Mitsuaki Yano (40200563)

# of Collaborated Projects: 2 results

# of Collaborated Products: 24 results
4. 小山政俊 (30758636)

# of Collaborated Projects: 2 results

# of Collaborated Products: 8 results
5. KOIKE Kazuto (40351457)

# of Collaborated Projects: 1 results

# of Collaborated Products: 22 results
6. TSUTSUI Hiroshi (00351453)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. OMATU Shigeru (30035662)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
8. 原田義之

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

SASA Shigehiko 佐々 誠彦

Research Projects

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Development of an intense terahertz pulse source using semiconductor heterostructuresPrincipal Investigator

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Development of an intense terahertz pulse source using high-quality InAs thin filmsPrincipal Investigator

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Development of an ecological and economical urine sensing system for diabetic disease screening

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Fabrication of new structure transistors using III-V Semiconductors/High-k materials on Si substrates

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Development of ZnO-based transistors operated in gigahertzfrequency rangePrincipal Investigator

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High-sensitive Terahertz technology using semiconductor quantum nanostructures

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Fabrication of terahertz detectors based on InAs/AISb/AlGaSb/GaSb heterostructures

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Developmert of spintronics devices using InAs-based heterostructuresPrincipal Investigator

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Development of InAs-based quantum-effect devices operative at room temperaturePrincipal Investigator

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InAs系ヘテロ極微構造における量子輸送現象とデバイス応用

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InAs系ヘテロ極微構造における量子輸送現象とデバイス応用

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[Book] 高周波半導体材料・デバイスの新展開(第11編, 第1章 2.InAs系ヘテロ接合デバイスとMBE成長技術)2006

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[Book] 高周波半導体材料・デバイスの新展開2006

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[Journal Article] Development of terahertz optical sources for an excitation wavelength of 1.56 μm2021

SASA Shigehiko 佐々誠彦