Fujioka Hiroshi 藤岡洋

… Alternative Names

FUJIOKA Hiroshi 藤岡洋

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Researcher Number	50282570
Other IDs
External Links
Affiliation (Current)	2022: 東京大学, 生産技術研究所, 教授
Affiliation (based on the past Project Information) *help	2016 – 2021: 東京大学, 生産技術研究所, 教授 2012 – 2014: 東京大学, 生産技術研究所, 教授 2004 – 2010: 東京大学, 生産技術研究所, 教授 1999 – 2003: 東京大学, 大学院・工学系研究科, 助教授 1998: 東京大学, 大学院・工学系研究科, 講師
Review Section/Research Field	Principal Investigator Science and Engineering / Inorganic industrial materials / 無機工業化学 / Functional materials/Devices Except Principal Investigator Electronic materials/Electric materials / Applied materials science/Crystal engineering
Keywords	Principal Investigator GaN / 結晶工学 / 特異構造 / 電子・電気材料 / 半導体物性 / 格子欠陥 / 先端機能デバイス / 窒化物半導体 / エピタキシャル成長 / MBE … More / PLD / 窒化ガリウム / 電磁鋼板 / III族窒化物 / パルス励起堆積法 / 低温成長 / 窒化インジウム / 赤外発光素子 / 高速電子素子 / 雲母 / フレキシブルエレクトロニクス / スパッタ / 発光素子 / 擬似単結晶 / 表示素子 / 界面バッファー層 / 発光ダイオード / ホトルミネッセンス / ディスプレー / 窒化アルミニウム / Mgドーピング / Light Emitting Devices / Quasi-Single Crystal Substrates / Epitaxial Growth / Display Devices / Interface Buffer Layers / ユニバーサル結晶成長 / シリコン / Epitaxial growth / Gallium nitride / Steel / Universal crystal growth / Silicon / 結晶成長 … More Except Principal Investigator 放射光 / 光電子分光 / Si / photoelectron spectroscopy / MnAs / MBE / 電気測定 / ゲート絶縁膜 / 非破壊分析 / 酸化膜 / 酸窒化膜 / シリコン / ULSI / シンクロトロン放射光 / MOSトランジスタ / ゲート酸化膜 / 密度内関数法 / Synchrotron radiation / electrical measurements / gate insulators / non-destructive analysis / oxide / oxinitride / 磁性ナノ構造 / 光電子顕微鏡 / 強相関酸化物 / コンビナトリアル解析 / FLAPW法 / MBE成長 / 磁性超微粒子 / 酸化物磁性体 / 量子ナノ構造 / 磁性ドット / 自己組織化 / スピン制御 / synchrotron radiation / magnetic nanostructures / photoelectron emission microscopy / strongly correlated oxides / combinatorial analysis Less

Materials Science and Advanced Elecronics created by singularityArea Organizer
- Area Organizer
  
  藤岡洋
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
Steering GroupPrincipal Investigator
- Principal Investigator
  
  FUJIOKA Hiroshi
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
Creation of Singularity Structures by Time-Domain Control under Nonequilibrium ConditionsPrincipal Investigator
- Principal Investigator
  
  FUJIOKA Hiroshi
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
国際活動支援班Principal Investigator
- Principal Investigator
  
  藤岡洋
- Project Period (FY)
  2016 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
Flexible electronics on mica substratesPrincipal Investigator
- Principal Investigator
  
  FUJIOKA Hiroshi
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Inorganic industrial materials
- Research Institution
  The University of Tokyo
Low temperature growth of InN films by pulsed excitation depositionPrincipal Investigator
- Principal Investigator
  
  FUJIOKA Hiroshi
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
Development of devices with single crystalline Si grown on steelPrincipal Investigator
- Principal Investigator
  
  FUJIKA Hiroshi
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Functional materials/Devices
- Research Institution
  The University of Tokyo
Research on GaN Light Emitting Devices on Quasi-Single Crystal Metal SubstratesPrincipal Investigator
- Principal Investigator
  
  FUJIOKA Hiroshi
- Project Period (FY)
  2002 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  無機工業化学
- Research Institution
  The University of Tokyo
Photon and spin control devices using semiconductor/magnetic quanturn nanostructures
- Principal Investigator
  
  OSHIMA Masaharu
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo
Development of ultra-thin insulator films for next-generation super-high density devices
- Principal Investigator
  
  OSHIMA Masaharu
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  School of Engineering, University of Tokyo

[Journal Article] Heavily Si-doped pulsed sputtering deposited GaN for tunneling junction contacts in UV-A light emitting diodes2021
- Author(s)
  Fudetani Taiga、Ueno Kohei、Kobayashi Atsushi、Fujioka Hiroshi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 118 Pages: 072101-072101
- DOI
  10.1063/5.0040500
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K05292, KAKENHI-PLANNED-16H06414
[Journal Article] Vertical p-type GaN Schottky barrier diodes with nearly ideal thermionic emission characteristics2021
- Author(s)
  Ueno Kohei、Shibahara Keita、Kobayashi Atsushi、Fujioka Hiroshi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 118 Pages: 022102-022102
- DOI
  10.1063/5.0036093
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K05292, KAKENHI-PLANNED-16H06414
[Journal Article] Autonomous growth of NbN nanostructures on atomically flat AlN surfaces2020
- Author(s)
  Atsushi Kobayashi, Kohei Ueno, Hiroshi Fujioka
- Journal Title
  
  Applied Physics Letters
  
  Volume: 117 Pages: 231601-231601
- DOI
  10.1063/5.0031604
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04955, KAKENHI-PROJECT-19K05292, KAKENHI-PLANNED-16H06414
[Journal Article] Combined infrared reflectance and Raman spectroscopy analysis of Si-doping limit of GaN2020
- Author(s)
  Ma Bei、Tang Mingchuan、Ueno Kohei、Kobayashi Atsushi、Morita Ken、Fujioka Hiroshi、Ishitani Yoshihiro
- Journal Title
  
  Applied Physics Letters
  
  Volume: 117 Pages: 192103-192103
- DOI
  10.1063/5.0023112
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K05292, KAKENHI-PLANNED-16H06414, KAKENHI-PLANNED-16H06425
[Journal Article] Coherent epitaxial growth of superconducting NbN ultrathin films on AlN by sputtering2020
- Author(s)
  Atsushi Kobayashi, Kohei Ueno, Hiroshi Fujioka
- Journal Title
  
  Applied Physics Express
  
  Volume: 13 Pages: 061006-061006
- DOI
  10.35848/1882-0786/ab916e
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18K04955, KAKENHI-PROJECT-19K05292, KAKENHI-PLANNED-16H06414
[Journal Article] Growth of InN ultrathin films on AlN for the application to field-effect transistors2020
- Author(s)
  Jeong Dayeon, Atsushi Kobayashi, Kohei Ueno, Hiroshi Fujioka
- Journal Title
  
  AIP Advances
  
  Volume: 10 Pages: 125221-125221
- DOI
  10.1063/5.0035203
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18K04955, KAKENHI-PROJECT-19K05292, KAKENHI-PLANNED-16H06414
[Journal Article] Characteristics of unintentionally doped and lightly Si-doped GaN prepared via pulsed sputtering2019
- Author(s)
  Kohei Ueno、Atsushi Kobayashi、Hiroshi Fujioka
- Journal Title
  
  AIP Advances
  
  Volume: 9 Pages: 075123-075123
- DOI
  10.1063/1.5103185
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18K04955, KAKENHI-PROJECT-19K05292, KAKENHI-PLANNED-16H06414
[Journal Article] Wide range doping controllability of p-type GaN films prepared via pulsed sputtering2019
- Author(s)
  Fudetani Taiga、Ueno Kohei、Kobayashi Atsushi、Fujioka Hiroshi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 114 Pages: 032102-032102
- DOI
  10.1063/1.5079673
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04955, KAKENHI-PLANNED-16H06414
[Journal Article] Improving the electron mobility of polycrystalline InN grown on glass substrates using AlN crystalline orientation layers2019
- Author(s)
  Masumi Sakamoto、Atsushi Kobayashi、Yoshino K. Fukai、Kohei Ueno、Yuki Tokumoto、Hiroshi Fujioka
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 126 Pages: 075701-075701
- DOI
  10.1063/1.5117307
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04955, KAKENHI-PLANNED-16H06414
[Journal Article] AlN/InAlN thin-film transistors fabricated on glass substrates at room temperature2019
- Author(s)
  Kyohei Nakamura、Atsushi Kobayashi、Kohei Ueno、Jitsuo Ohta、Hiroshi Fujioka
- Journal Title
  
  Scientific Reports
  
  Volume: 9 Pages: 6254-6254
- DOI
  10.1038/s41598-019-42822-6
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18K04955, KAKENHI-PROJECT-19K05292, KAKENHI-PLANNED-16H06414
[Journal Article] Optical characteristics of highly conductive n-type GaN prepared by pulsed sputtering deposition2019
- Author(s)
  Kohei Ueno、Taiga Fudetani、Atsushi Kobayashi、Hiroshi Fujioka
- Journal Title
  
  Scientific Reports
  
  Volume: 9 Pages: 20242-20242
- DOI
  10.1038/s41598-019-56306-0
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18K04955, KAKENHI-PROJECT-19K05292, KAKENHI-PLANNED-16H06414
[Journal Article] Nitrogen-polar InGaN-based LEDs on sapphire fabricated using pulsed sputtering technique2018
- Author(s)
  上野耕平、岸川英司、太田実雄、藤岡洋
- Journal Title
  
  JJACG
  
  Volume: 45 Issue: 1 Pages: 02-02
- DOI
  10.19009/jjacg.3-45-1-02
- NAID
  130006727549
- ISSN
  0385-6275, 2187-8366
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06414
[Journal Article] Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering2018
- Author(s)
  Sakurai Yuya、Ueno Kohei、Kobayashi Atsushi、Ohta Jitsuo、Miyake Hideto、Fujioka Hiroshi
- Journal Title
  
  APL Materials
  
  Volume: 6 Pages: 111103-111103
- DOI
  10.1063/1.5051555
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18K04955, KAKENHI-PLANNED-16H06414
[Journal Article] N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering2017
- Author(s)
  Kohei Ueno, Eiji Kishikawa, Jitsuo Ohta, and Hiroshi Fujioka
- Journal Title
  
  APL Materials
  
  Volume: 5 Pages: 026102-026102
- DOI
  10.1063/1.4975617
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PLANNED-16H06414
[Journal Article] Low-temperature pulsed sputtering growth of InGaN multiple quantum wells for photovoltaic devices2017
- Author(s)
  Yasuaki Arakawa, Kohei Ueno, Hidenari Noguchi, Jitsuo Ohta, and Hiroshi Fujioka
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 56 Issue: 3 Pages: 031002-031002
- DOI
  10.7567/jjap.56.031002
- NAID
  210000147457
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PLANNED-16H06414
[Journal Article] Epitaxial growth of semipolar InAlN films on yttria-stabilized zirconia2017
- Author(s)
  Masaaki Oseki, Atsushi Kobayashi, Jitsuo Ohta, Masaharu Oshima, and Hiroshi Fujioka
- Journal Title
  
  Physica Status Solidi B
  
  Volume: 254 Pages: 1700211-1700211
- DOI
  10.1002/pssb.201700211
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06414
[Journal Article] Highly conductive Ge-doped GaN epitaxial layers prepared by pulsed sputtering2017
- Author(s)
  Kohei Ueno, Yasuaki Arakawa, Atsushi Kobayashi, Jitsuo Ohta, and Hiroshi Fujioka
- Journal Title
  
  Applied Physics Express
  
  Volume: 10 Issue: 10 Pages: 101002-101002
- DOI
  10.7567/apex.10.101002
- NAID
  210000135984
- ISSN
  1882-0778, 1882-0786
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06414
[Journal Article] Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils2017
- Author(s)
  H. Kim, J. Ohta, K. Ueno, A. Kobayashi, M. Morita, Y. Tokumoto, and H. Fujioka
- Journal Title
  
  Scientific Reports
  
  Volume: 7 Pages: 2112-2112
- DOI
  10.1038/s41598-017-02431-7
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06414
[Journal Article] Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO2017
- Author(s)
  Atsushi Kobayashi, Jitsuo Ohta, and Hiroshi Fujioka
- Journal Title
  
  Scientific Reports
  
  Volume: 7 Pages: 12820-12820
- DOI
  10.1038/s41598-017-12518-w
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06414
[Journal Article] Epitaxial Growth of Thick Polar and Semipolar InN Films on Yttria‐Stabilized Zirconia Using Pulsed Sputtering Deposition2017
- Author(s)
  Atsushi Kobayashi, Masaaki Oseki, Jitsuo Ohta, and Hiroshi Fujioka
- Journal Title
  
  Physica Status Solidi B
  
  Volume: 255 Pages: 1700320-1700320
- DOI
  10.1002/pssb.201700320
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06414
[Journal Article] Electrical properties of Si-doped GaN prepared using pulsed sputtering2017
- Author(s)
  Yasuaki Arakawa, Kohei Ueno, Hideyuki Imabeppu, Atsushi Kobayashi, Jitsuo Ohta, and Hiroshi Fujioka
- Journal Title
  
  Applied Physics Letters
  
  Volume: 110 Pages: 042103-042103
- DOI
  10.1063/1.4975056
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PLANNED-16H06414
[Journal Article] Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering2017
- Author(s)
  Kohei Ueno, Taiga Fudetani, Yasuaki Arakawa, Atsushi Kobayashi, Jitsuo Ohta, and Hiroshi Fujioka
- Journal Title
  
  APL Materials
  
  Volume: 5 Pages: 126102-126102
- DOI
  10.1063/1.5008913
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06414
[Journal Article] Characterization of GaN films grown on hafnium foils by pulsed sputtering deposition2017
- Author(s)
  H. Kim, J. Ohta, K. Ueno, A. Kobayashi, and H. Fujioka
- Journal Title
  
  Physica Status Solidi A
  
  Volume: 214 Pages: 1700244-1700244
- DOI
  10.1002/pssa.201700244
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06414
[Journal Article] Dramatic reduction in process temperature of InGaN based light emitting diodes by pulsed sputtering growth technique2014
- Author(s)
  中村英司、上野耕平
- Journal Title
  
  Appl. Phys. Lett. 104, 051121 (2014).
  
  Volume: 104 Pages: 051121-051121
- DOI
  10.1063/1.4864283
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J09592, KAKENHI-PROJECT-24245040
[Journal Article] Theoretical Investigation of the Polarity Determination forc-Plane InN Grown on Yttria-Stabilized Zirconia (111) Substrates with Yttrium Surface Segregation2013
- Author(s)
 Y. Guo, S. Inoue, A. Kobayashi, J. Ohta, and H. Fujioka
- Journal Title
 
 Applied Physics Express
 
 Volume: 6-021002 Issue: 2 Pages: 021002-021002
- DOI
 10.7567/apex.6.021002
- NAID
 10031152671
- ISSN
 1882-0778, 1882-0786
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-24245040
[Journal Article] Structural Properties ofm-Plane InAlN Films Grown on ZnO Substrates with Room-Temperature GaN Buffer Layers2013
- Author(s)
 T. Kajima, A. Kobayashi, K. Uen, J. Ohta, H. Fujioka, and M. Oshima
- Journal Title
 
 Applied Physics Express
 
 Volume: 6-021003 Issue: 2 Pages: 021003-021003
- DOI
 10.7567/apex.6.021003
- ISSN
 1882-0778, 1882-0786
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-24245040
[Journal Article] Band Configuration of SiO2/m-Plane ZnO Heterointerface Correlated with Electrical Properties of Al/SiO2/ZnO Structures2013
- Author(s)
 J. Liu, A. Kobayashi, K. Ueno, J. Ohta, H. Fujioka, and M. Oshima
- Journal Title
 
 Jpn. J. Appl. Phys.
 
 Volume: 52-011101 Issue: 1R Pages: 011101-011101
- DOI
 10.7567/jjap.52.011101
- NAID
 210000141719
- ISSN
 0021-4922, 1347-4065
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-24245040
[Journal Article] Theoretical study on initial stage of InN growth on cubic zirconia (111) substrates2013
- Author(s)
  Y. Guo, S. Inoue, A. Kobayashi, J. Ohta, and H. Fujioka
- Journal Title
  
  Physica Status Solidi RRL
  
  Volume: 7 Pages: 207-210
- DOI
  10.1002/pssr.201206465
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24245040
[Journal Article] Electron mobility of ultrathin InN grown on yttria-stabilized zirconia with two-dimensionally grown initial layers2013
- Author(s)
  K. Okubo, A. Kobayashi, J. Ohta, M. Oshima, and H. Fujioka
- Journal Title
  
  Applied Physics Letters
  
  Volume: 102-022103 Pages: 1-3
- DOI
  10.1063/1.4776210
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24245040
[Journal Article] Polarity control and growth mode of InN on yttria-stabilized zirconia (111) surfaces2012
- Author(s)
  A.Kobayashi, K.Ohkubo, J. Ohta, M. Oshima, and H. Fujioka
- Journal Title
  
  Physica Status Solidi A
  
  Volume: 209 Pages: 2251-2254
- DOI
  10.1002/pssa.201228287
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24245040
[Journal Article] Fabrication of densely packed array of GaN nanostructures on nano-imprinted substrates.2011
- Author(s)
  F.Shih, A.Kobayashi, S.inoue, J.Ohta, H.Fujioka
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 319 Pages: 102-105
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Coherent growth of r-plane GaN films on ZnO substrates at room temperature2011
- Author(s)
  A.Kobayashi, K.Ueno, J.Ohta, H.Fujioka
- Journal Title
  
  Physica Status Solidi A
  
  Pages: 1-4
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Characteristics of AlN Films Grown on Thermally-Nitrided Sapphire Substrates2011
- Author(s)
  K.Ueno, J.Ohta, H.Fujioka, H.Fukuyama
- Journal Title
  
  Applied Physics Express
  
  Volume: 4
- NAID
  10027782707
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Room-temperature epitaxial growth of high quality m-plane InAlN films on nearly lattice-matched ZnO substrates2010
- Author(s)
  T.Kajima, A.Kobayashi, K.Ueno, K.Shimomoto, T.Fujii, J.Ohta, H.Fujioka, M.Oshima
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 49
- NAID
  40017216057
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Characteristics of thick m-plane InGaN films grown on ZnO substrates using room temperature epitaxial buffer layers2010
- Author(s)
  K.Shimomoto, A.Kobayashi, K.Ueno, J.Ohta, M.Oshima, H.Fujioka
- Journal Title
  
  Appl.Phys.Exp. 3
  
  Pages: 61001-61001
- NAID
  10027014931
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Structural Characteristics of GaN/InN Heterointerfaces Fabricated at Low Temperatures by Pulsed Laser Deposition2010
- Author(s)
  T.Fujii, A.Kobayashi, K.Shimomoto, J.Ohta, M.Oshima, H.Fujioka
- Journal Title
  
  Appl.Phys.Exp. 3
  
  Pages: 21003-21003
- NAID
  10027013296
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Structural properties of semipolar AlxGa1-xN (1_103) films grown on ZnO substrates using room temperature epitaxial buffer layers2010
- Author(s)
  K.Ueno, A.Kobayashi, J.Ohta, H.Fujioka
- Journal Title
  
  Physica Status Solidi A
  
  Volume: 207 Pages: 2149-2152
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Structural characteristics of semipolar InN (11 21) films grown on yttria stabilized zirconia substrates2010
- Author(s)
  T.Fujii, A.Kobayashi, J.Ohta, M.Oshima, H.Fujioka
- Journal Title
  
  Physica Status Solidi A
  
  Volume: 207 Pages: 2269-2271
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Optical polarization characteristics of m-plane InGaN films coherently grown on ZnO substrates2010
- Author(s)
  A.Kobayashi, K.Shimomoto, J.Ohta, H.Fujioka, M.Oshima
- Journal Title
  
  Phys.Status Solidi (RRL) 4
  
  Pages: 188-188
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Structural and optical properties of nonpolar AlN (11_20) films grown on ZnO (11_20) substrates with a room-temperature GaN buffer layer2010
- Author(s)
  K.Ueno, A.Kobayashi, J.Ohta, H.Fujioka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 49
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Growth Orientation Control of Semipolar InN Films Using Yttria-Stabilized Zirconia Substrates2010
- Author(s)
  T.Fujii, K.Shimomoto, J.Ohta, M.Oshima, H.Fujioka
- Journal Title
  
  Jpn.J.Appl.Phys. 49
  
  Pages: 80204-80204
- NAID
  40017253748
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Optical polarization characteristics of m-plane InGaN films coherently grown on ZnO substrates2010
- Author(s)
  A.Kobayashi, K.Shimomoto, J.Ohta, H.Fujioka, M.Oshima
- Journal Title
  
  Physica Status Solidi (RRL)
  
  Volume: 4 Pages: 188-190
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Growth orientation control of semipolar InN films using yttria-stabilized zirconia substrates2010
- Author(s)
  T.Fujii, K.Shimomoto, J.Ohta, M.Oshima, H.Fujioka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 49
- NAID
  40017253748
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Improvement in the crystalline quality of semipolar AlN (1_102) films using ZnO substrates with self-organized nanostripes2010
- Author(s)
  K.Ueno, A.Kobayashi, J.Ohta, H.Fujioka
- Journal Title
  
  Applied Physics Express
  
  Volume: 3
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Investigation on the conversion efficiency of InGaN solar cells fabricated on GaN and ZnO substrates2010
- Author(s)
  S.Inoue, M.Katoh, A.Kobayashi, J.Ohta, H.Fujioka
- Journal Title
  
  Physica Status Solidi RRL
  
  Volume: 4 Pages: 88-90
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Improvements in optical properties of semipolar r-plane GaN films grown using atomically flat ZnO substrates and room temperature epitaxial buffer layers2010
- Author(s)
  A.Kobayashi, S.Kawano, K.Ueno, J.Ohta, H.Fujioka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 49
- NAID
  40017341189
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Characteristics of m-Plane InN Films Grown on ZnO Substrates at Room Temperature by Pulsed Laser Deposition2010
- Author(s)
  K.Shimomoto, A.Kobayashi, K.Mitamura, K.Ueno, J.Ohta, M.Oshima, H.Fujioka
- Journal Title
  
  Jpn.J.Appl.Phys. 49
  
  Pages: 80202-80202
- NAID
  40017253746
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Characteristics of m-plane InN films grown on ZnO substrates at room temperature by pulsed laser deposition2010
- Author(s)
  K.Shimomoto, A.Kobayashi, K.Mitamura, K.Ueno, J.Ohta, M.Oshima, H.Fujioka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 49
- NAID
  40017253746
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Band Offsets of Polar and Nonpolar GaN/ZnO Heterostructures Determined by Synchrotron Radiation Photoemission Spectroscopy2010
- Author(s)
  J.W.Liu, A.Kobayashi, S.Toyoda, H.Kamada, A.Kikuchi, J.Ohta, H.Fujioka.
- Journal Title
  
  Physica Status Solidi B
  
  Pages: 1-4
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Characteristics of thick m-plane InGaN films grown on ZnO substrates using room temperature epitaxial buffer layers2010
- Author(s)
  K.Shimomoto, A.Kobayashi, K.Ueno, J.Ohta, M.Oshima, H.Fujioka
- Journal Title
  
  Applied Physics Express
  
  Volume: 3
- NAID
  10027014931
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Epitaxial growth of high purity cubic InN films on MgO substrates using HfN buffer layers by pulsed laser deposition2009
- Author(s)
  R.Ohba, J.Ohta, K.Shimomoto, T.Fujii, K.Okamoto, A.Aoyama, T.Nakano, A.Kobayashi, H.Fujioka, M.Oshima
- Journal Title
  
  J.Solid State Chemistry 182
  
  Pages: 2887-2887
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Room-Temperature Epitaxial Growth of High Quality AlN on SiC by Pulsed Sputtering Deposition2009
- Author(s)
  K. Sato, J. Ohta, S. Inoue, A. Kobayashi, and H. Fujioka
- Journal Title
  
  Appl. Phys. Exp. 2
  
  Pages: 11003-11003
- NAID
  10025083938
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Fabrication and Characterization of AlN/InN Heterostructures2009
- Author(s)
  T.Fujii, K.Shimomoto, R.Ohba, Y.Toyoshima, K.Horiba, J.Ohta, H.Fujioka, M.Oshima, S.Ueda, H.Yoshikawa, K.Kobayashi
- Journal Title
  
  Appl Phys.Exp. 2
  
  Pages: 11002-11002
- NAID
  10025083913
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Low-temperature growth of high quality AlN films on carbon face 6H-SiC2008
- Author(s)
  M.-H.Kim, J.Ohta, A.Kobayashi, H.Fujioka, M.Oshima
- Journal Title
  
  Physica Status Solidi - Rapid Research Letters 2
  
  Pages: 13-13
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Low temperature Epitaxial Growth of GaN films on LiGaO2 substrates2007
- Author(s)
  K.Sakurada, A.Kobayashi, Y.Kawaguchi, J.Ohta, H.Fujioka
- Journal Title
  
  Applied Physics Letters (accepted for press)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Growth temperature dependence of structural properties for AlN films on ZnO (000-1) substrates2007
- Author(s)
  K.Ueno, A.Kobayashi, J.Ohta, H.Fujioka
- Journal Title
  
  Applied Physics Letters 90
  
  Pages: 141908-141908
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Room temperature epitaxial growth of m-plane GaN on lattice-matched ZnO substrates2007
- Author(s)
  A. Kobayashi, S. Kawano, Y. Kawaguchi, J. Ohta, and H. Fujioka
- Journal Title
  
  Appl. Phys. Lett. 90
  
  Pages: 41908-41908
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Epitaxial growth mechanisms of AlN on SiC substrates at room temperature2007
- Author(s)
  M.H.Kim, J.Ohta, A.Kobayashi, H.Fujioka, M.Oshima
- Journal Title
  
  Appl.Phys.Lett. 91
  
  Pages: 151903-151903
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Low temperature Epitxial Growth of GaN films on LiGa02 substrates2007
- Author(s)
  K.Sakurada, A.Kobayashi, Y.Kawaguchi, J.Ohta, H.Fujioka
- Journal Title
  
  Applied Physics Letters (accepted for press)
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Growth of InN films on spinel substrates by pulsed laser deposition2007
- Author(s)
  K. Mitamura, J. Ohta, H. Fujioka, and M. Oshima
- Journal Title
  
  physica status solidi (rapid research letters) 5
  
  Pages: 211-211
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Growth temperature dependence of structural properties for A1N films on ZnO (000-1) substrates2007
- Author(s)
  K.Ueno, A.Kobayashi, J.Ohta, H.Fujioka
- Journal Title
  
  Applied Physics Letters 90
  
  Pages: 141908-141908
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Room temperature epitaxial growth of m-plane GaN on lattice-matched ZnO substrates2007
- Author(s)
  A.Kobayashi, S.Kawano, Y.Kawaguchi, J.Ohta, H.Fujioka
- Journal Title
  
  Applied Physics Letters 90
  
  Pages: 41908-41908
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Epitaxial growth of AlN on Cu(111) substrates using pulsed laser deposition2006
- Author(s)
  S.Inoue, K.Okamoto, N.Matsuki, T.-W.Kim, H.Fujioka
- Journal Title
  
  Journal of Crystal Growth 289
  
  Pages: 574-574
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Characteristics of single crystalline AlN films grown on Ru(0001) substrates2006
- Author(s)
  S.Inoue, K.Okamoto, T.Nakano, H.Fujioka
- Journal Title
  
  Journal of Crystal Growth 297
  
  Pages: 317-317
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Epitaxial growth of GaN on copper substrates2006
- Author(s)
  S.Inoue, K.Okamoto, N.Matsuki, T.W.Kim, H.Fujioka
- Journal Title
  
  Applied Physics Letters 88
  
  Pages: 261910-261910
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Characteristics of single crystalline A1N films grown on Ru(0001) substrates2006
- Author(s)
  S.Inoue, K.Okamoto, T.Nakano, H.Fujioka
- Journal Title
  
  Journal of Crystal Growth 297
  
  Pages: 317-317
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Epitaxial growth of A1N on Cu(111) substrates using pulsed laser deposition2006
- Author(s)
  S.Inoue, K.Okamoto, N.Matsuki, T.-W.Kim, H.Fujioka
- Journal Title
  
  Journal of Crystal Growth 289
  
  Pages: 574-574
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] P-type activation of AlGaN by hydrogen desorption using catalytic Ni films2006
- Author(s)
  T.Naono, H.Fujioka, J.Okabayashi, M.Oshima, H.Miki
- Journal Title
  
  Applied Physics Letters 88
  
  Pages: 152114-152114
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] P-type activation of A1GaN by hydrogen desorption using catalytic Ni films2006
- Author(s)
  T.Naono, H.Fujioka, J.Okabayashi, M.Oshima, H.Miki
- Journal Title
  
  Applied Physics Letters 88
  
  Pages: 152114-152114
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Heteroepitaxial growth of gallium nitride on muscovite mica plates by pulsed laser deposition2005
- Author(s)
  N.Matsuki, T.-W.Kim, J.Ohta, H.Fujioka
- Journal Title
  
  Solid State Communications 136
  
  Pages: 338-338
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Characteristics of single-crystal AIN films grown on ferromagnetic metal substrates2005
- Author(s)
  K.Okamoto, S.Inoue, N.Matsuki, T.-W.Kim, H.Fujioka, M.Oshima
- Journal Title
  
  physica status solidi (a) 202
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] GaN Heteroepitaxial Growth on LiTaO3(0001) Step Substrates by Pulsed Laser Deposition2005
- Author(s)
  Y.Tsuchiya, A.Kobayashi, J.Ohta, H.Fujioka, M.Oshima
- Journal Title
  
  Jap. J. of Appl. Phys. 44
- NAID
  130004533880
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Room-temperature epitaxial growth of GaN on lattice-matched ZrB_2 substrates by pulsed-laser deposition2005
- Author(s)
  Y.Kawaguchi, J.Ohta, A.Kobayashi, H.Fujioka
- Journal Title
  
  Applied Phyics Letters 87
  
  Pages: 221907-221907
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Photoemission study on interfacial reaction of Ti/n-type GaN2005
- Author(s)
  T.Naono, J.Okabayashi, S.Toyoda, H.Fujioka, M.Oshima, H.Hamamatsu
- Journal Title
  
  Applied Surface Science 244
  
  Pages: 277-277
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Room-temperature epitaxial growth of GaN on lattice-matched ZrB_2 substrates by pulsed-laser deposition2005
- Author(s)
  Y.Kawaguchi, J.Ohta, A.Kobayashi, H.Fujioka
- Journal Title
  
  Applied Physics Letters 87
  
  Pages: 221907-221907
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Photoemission study on interfacial reaction of Ti/n-type GaN2005
- Author(s)
  T.Naono, J.Okabayashi, S.Toyoda, H.Fujioka, M.Oshima, H.Hamamatsu
- Journal Title
  
  Applied Scurface Science 244
  
  Pages: 277-277
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] GaN heteroepitaxial growth on LiNbO3(0001) step substrates with AlN buffer layers2005
- Author(s)
  Y.Tsuchiya, A.Kobayashi, J.Ohta, H.Fujioka, M.Oshima
- Journal Title
  
  physica status solidi (a) 202
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] GaN Heteroepitaxial Growth on LiTaO3(0001) Step Substrates by Pulsed Laser Deposition2005
- Author(s)
  Y.Tsuchiya, A.Kobayashi, J.Ohta, H.Fujioka, M.Oshima
- Journal Title
  
  Jap.J.of Appl.Phys. 44
- NAID
  130004533880
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Characteristics of single-crystal AlN films grown on ferromagnetic metal substrates2005
- Author(s)
  K.Okamoto, S.Inoue, N.Matsuki, T.-W.Kim, H.Fujioka, M.Oshima
- Journal Title
  
  physica status solidi (a) 202
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Epitaxial growth of InN on nearly lattice-matched (Mn,Zn)Fe2O42005
- Author(s)
  J.Ohta, K.Mitamura, A.Kobayashi, T.Honke, H.Fujioka, M.Oshima
- Journal Title
  
  Solid State Communications 137
  
  Pages: 208-208
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Synchrotron-radiation deep level transient spectroscopy for defect characterization of semiconductors2004
- Author(s)
  H.Fujioka, T.Sekiya, Y.Kuzuoka, M.Oshima, H.Usuda, N.Hirashita, M.Niwa
- Journal Title
  
  Applied Physics Letters 85
  
  Pages: 413-413
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] InN epitaxial growths on Yttria stabilized Zirconia (111) step substrates2004
- Author(s)
  T.Honke, H.Fujioka, J.Ohta, M.Oshima
- Journal Title
  
  Journal of Vacuum Science and Technology A 22
  
  Pages: 2487-2487
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Experimental and theoretical investigation on structural properties of InN grown on sapphire2004
- Author(s)
  K.Fujiwara, A.Ishii, J.Ohta, H.Fujioka, M.Oshima
- Journal Title
  
  Thin Solid Films 464/465
  
  Pages: 112-112
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] A pulsed laser ablaion/plasma chemical vapor deposition tandem system for combinatorial device fabrication2004
- Author(s)
  N.Matsuki, Y.Abiko, M.Kobayashi, H.Fujioka, H.Koinuma
- Journal Title
  
  Applied Physics 79
  
  Pages: 1413-1413
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Epitaxial Growth of InN on c-Plane Sapphire by PLD with RF Nitrogen Radical Source2004
- Author(s)
  J.Ohta, T.Honke, H.Fujioka, M.Oshima
- Journal Title
  
  Thin Solid Films 457
  
  Pages: 109-109
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] A pulsed laser ablation / plasma chemical vapor deposition tandem system for combinatorial device fabrication2004
- Author(s)
  N.Matsuki, Y.Abiko, M.Kobayashi, H.Fujioka, H.Koinuma
- Journal Title
  
  Applied Physics 79
  
  Pages: 1413-1413
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Synchrotron-radiation deep level transient spectroscopy for defect characterization of semiconductors2004
- Author(s)
  H.Fujioka et al.
- Journal Title
  
  Applied Physics Letters 85
  
  Pages: 413-413
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Structural characterizationof group III nitrides grown by PLD2004
- Author(s)
  H.Takahashi, J.Ohta, H.Fujioka, M.Oshima, M.Kimura
- Journal Title
  
  Thin Solid Films 457
  
  Pages: 114-114
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Synchrotron-radiation deep level transient spectroscopy for defect characterization of semiconductors2004
- Author(s)
  H.Fujioka, T.Sekiya, Y.Kuzuoka, M.Oshima, H.Usuda, N.Hirashima
- Journal Title
  
  Applied Physics Letters 85
  
  Pages: 413-413
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Experimental and theoretical investigation on structural properties of InN grown on sapphire2004
- Author(s)
  K.Fujiwara, A.Ishii, J.Ohta, H.Fujioka, M.Ohsima
- Journal Title
  
  Thin Solid Films 464/465
  
  Pages: 112-112
- Data Source
  KAKENHI-PROJECT-16205022
[Patent] GaN膜生成方法及び半導体素子2005
- Inventor(s)
  藤岡洋, 小林篤
- Industrial Property Rights Holder
  神奈川科学技術アカデミー, 東京大学
- Industrial Property Number
  2005-024034
- Filing Date
  2005-01-31
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Presentation] トンネル接合を用いたモノリシック多色 LED の作製と評価2021
- Author(s)
  森川創一朗、上野耕平、小林篤、藤岡洋
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Epitaxial growth of NbN superconductors on AlN by sputtering2021
- Author(s)
  Atsushi Kobayashi, Kohei Ueno, and Hiroshi Fujioka
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] 縦型p型GaN SBD構造を用いたショットキー障壁高さの評価2021
- Author(s)
  青山航平、上野耕平、小林篤、藤岡洋
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Control of point defects in nitride semiconductors2021
- Author(s)
  Hiroshi Fujioka, Kohei Ueno, and Atushi Kobayashi
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] コヒーレントAlN/AlGaNヘテロ構造の作製とトランジスタ応用2021
- Author(s)
  前田亮太、上野耕平、小林篤、藤岡洋
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] 非平衡状態を利用した窒化物結晶の合成と応用2021
- Author(s)
  藤岡洋、上野耕平、小林篤
- Organizer
  第68回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] PSD法を用いたマイクロLEDディスプレイ実現に向けた取り組み2021
- Author(s)
  藤岡洋、上野耕平、小林篤
- Organizer
  日本金属学会 2021年春期第168回講演大会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Superconducting NbN/AlN Nanostructures Prepared by Sputtering2021
- Author(s)
  Atsushi Kobayashi, Kohei Ueno, Hiroshi Fujioka
- Organizer
  13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 14th International Conference on Plasma-Nano Technology & Sciense
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] 表面処理を施したAlN上に成長させたNbNの結晶方位解析2021
- Author(s)
  紀平俊矢、小林篤、上野耕平、藤岡洋
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] AlN原子ステップを利用したNbNナノ構造の自己組織化2021
- Author(s)
  小林篤、上野耕平、藤岡洋
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] 縦型p型GaNSBDを用いたショットキー障壁高さの評価2020
- Author(s)
  柴原啓太、上野耕平、小林篤、藤岡洋
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] 低濃度p型GaN縦型ショットキーバリアダイオード構造の作製と評価2020
- Author(s)
  上野耕平、柴原啓太、小林篤、藤岡洋
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] スパッタ法による窒化物半導体への不純物添加制御とデバイス応用2020
- Author(s)
  上野耕平, 小林篤, 藤岡洋
- Organizer
  第49回結晶成長国内会議（JCCG-49)
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] トンネル接合を用いた低濃度p型GaN縦型SBD構造の作製2020
- Author(s)
  柴原啓太、上野耕平、小林篤、藤岡洋
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] AlGaN系透明結晶の欠陥と電気特性の制御2020
- Author(s)
  藤岡洋、上野耕平、小林篤
- Organizer
  第81回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] スパッタ法によるAIN上へのNbN極薄膜エピタキシャル成長2020
- Author(s)
  小林篤、上野耕平、藤岡洋
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] マイクロLEDディスプレイ実現に向けた取り組み2020
- Author(s)
  藤岡洋
- Organizer
  日本金属学会2020年春期第166回講演大会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] パルススパッタ堆積法によるAlN/AlGaNヘテロ構造の作製と評価2020
- Author(s)
  前田亮太、上野耕平、小林篤、藤岡洋
- Organizer
  日本結晶成長学会ナノエピ分科会第12回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] AlN上にコヒーレント成長したNbN極薄膜の超電導特性2020
- Author(s)
  小林篤、上野耕平、藤岡洋
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Growth of ultrathin InN films on Al-polar AlN and its application to field-effect transistors2020
- Author(s)
  ジョン・ダヨン、小林篤、上野耕平、藤岡洋
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Field-effect transistors of ultrathin InN grown on AlN2020
- Author(s)
  Dayeon Jeong, Atsushi Kobayashi, Kohei Ueno, Hiroshi Fujioka
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] スパッタ法によるGaNへの不純物添加と素子応用2020
- Author(s)
  上野耕平、森川創一朗、柴原啓太、小林篤、藤岡洋
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] GaNの酸化膜形成2段階ウェットエッチング法における酸化膜の電気的評価2019
- Author(s)
  清藤泰旦、牧繪哲男、藤岡洋、前田就彦
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] 非平衡性制御による結晶成長の可能性2019
- Author(s)
  藤岡洋、上野耕平、小林篤
- Organizer
  日本結晶成長学会第48回結晶成長国内会議（JCCG-48）
- Invited
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Sputtering of III-Nitrides and Device Performance of Sputtered Material2019
- Author(s)
  Hiroshi Fujioka
- Organizer
  13th International Conference on Nitride Semiconductors (ICNS 13)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Basic properties of GaN grown by pulsed sputtering2019
- Author(s)
  Kohei Ueno, Atsushi Kobayashi, Hiroshi Fujioka
- Organizer
  SPIE. Photonics West OPTO 2019
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Preparation of High-Quality Nitride films and Devices with Pulsed Sputtering2019
- Author(s)
  Hiroshi Fujioka
- Organizer
  2nd International Conference on Radiation and Emission in Materials (ICREM-2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] 高濃度SiドープGaNの深さ方向結晶性の赤外およびラマン分光評価2019
- Author(s)
  湯明川, 馬ベイ, 森田健, 上野耕平, 小林篤, 藤岡洋, 石谷善博
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] スパッタ法により形成したサファイア上SiドープAlNの電気特性2019
- Author(s)
  櫻井悠也, 上野耕平, 小林篤, 上杉謙次郎, 三宅秀人, 藤岡洋
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Basic characteristics of ultrathin InN layers prepared by sputtering on various AlN templates2019
- Author(s)
  Dayeon Jeong, Atsushi Kobayashi, Kohei Ueno, Hiroshi Fujioka
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] AlN系バッファー層上に成長した多結晶InNの特性2019
- Author(s)
  坂本真澄, 小林篤, 上野耕平, 藤岡洋
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Basic characteristics of ultra-thin InN grown on AlN2019
- Author(s)
  Dayeon Jeong, Atsushi Kobayashi, Kohei Ueno, Hiroshi Fujioka
- Organizer
  日本結晶成長学会ナノエピ分科会第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] GaNの薄膜低温結晶成長技術とデバイス応用2019
- Author(s)
  藤岡洋
- Organizer
  応用物理学会　薄膜・表面物理分科会　第47回　薄膜・表面物理セミナー
- Invited
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Ⅳ族結晶配向層を用いたガラス基板上への窒化物半導体成長2019
- Author(s)
  小林篤、中野はるか、上野耕平、藤岡洋
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] スパッタリングによるフレキシブルマイクロLEDディスプレイの可能性2019
- Author(s)
  藤岡洋
- Organizer
  OPIE2019　マイクロLEDセミナー
- Invited
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] スパッタリング法によるGaN p-n+接合タイオードの作製2019
- Author(s)
  柴原啓太、上野耕平、小林篤、藤岡洋
- Organizer
  日本結晶成長学会ナノエピ分科会第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Sputtering epitaxial growth of nitrides and its application to optical and electron devices2019
- Author(s)
  Hiroshi Fujioka
- Organizer
  SPIE. Photonics West OPTO 2019
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] 高濃度Si添加半極性面GaN(2021)薄膜の作製と評価2019
- Author(s)
  森川創一朗、上野耕平、小林篤、藤岡洋
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] ガラス基板上に形成した窒化物結晶成長用配向制御層の評価2019
- Author(s)
  中野はるか、小林篤、上野耕平、藤岡洋
- Organizer
  日本結晶成長学会ナノエピ分科会第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] 窒化物成長用結晶配向層としてのグラフェンおよびGeの評価2019
- Author(s)
  中野はるか、小林篤、上野耕平、藤岡洋
- Organizer
  日本結晶成長学会第48回結晶成長国内会議（JCCG-48）
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] スパッタエピによる半極性面緑色 InGaN LED上へのトンネル接合コンタクトの形成2019
- Author(s)
  上野耕平、森川創一朗、小林篤、藤岡洋
- Organizer
  日本結晶成長学会第48回結晶成長国内会議（JCCG-48）
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Preparation of nitride materials for micro LED displays2019
- Author(s)
  Hiroshi Fujioka
- Organizer
  8th International Symposium on Optical Materials (IS-OM 8)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] スパッタリング法により形成したGaNトンネル接合コンタクトの評価2019
- Author(s)
  筆谷大河, 上野耕平, 小林篤, 藤岡洋
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Characteristics of GaN Tunnel Junction Contacts for LEDs Prepared by Pulsed Sputtering2019
- Author(s)
  Taiga Fudetani, Kohei Ueno, Atsushi Kobayashi, and Hiroshi Fujioka
- Organizer
  The 7th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] 非平衡条件下での窒化物成長とその素子応用2019
- Author(s)
  藤岡洋
- Organizer
  日本結晶成長学会ナノエピ分科会第11回ナノ構造・エピタキシャル成長講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Structural and Electrical Properties of AlN Films Prepared on Sapphire Substrates with Sputtering Technique2019
- Author(s)
  Yuya Sakurai, Kohei Ueno, Kenjiro Uesugi, Hideto Miyake, and Hiroshi Fujioka
- Organizer
  The 7th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Preparation of III-Nitrides with Sputtering for Micro LED Applications2019
- Author(s)
  Hiroshi Fujioka
- Organizer
  20th International Workshop on The Physics of Semiconductor Devices (IWPSD2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Characteristics of ultra-thin InN films grown on AlN2019
- Author(s)
  Dayeon Jeong, Atsushi Kobayashi, Kohei Ueno, Hiroshi Fujioka
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] トンネル接合コンタクトを用いた半極性面（20-21）緑色LEDの作製2019
- Author(s)
  上野耕平、森川創一朗、小林篤、藤岡洋
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] スパッタリング法により形成したp型GaN薄膜の深い準位の評価2019
- Author(s)
  柴原啓太, 上野耕平, 小林篤, 藤岡洋
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] パルススパッタ堆積法により作製した AlN 及び AlGaN の特性評価2018
- Author(s)
  櫻井悠也、上野耕平、小林篤、三宅秀人、藤岡洋
- Organizer
  日本結晶成長学会　第10回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] PSD法により形成した高濃度n型ドープGaN薄膜の特性評価2018
- Author(s)
  上野耕平、小林篤、藤岡洋
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Characteristics of highly conductive p-type GaN films prepared by pulsed sputtering2018
- Author(s)
  Taiga Fudetani, Kohei Ueno, Atsushi Kobayashi, and Hiroshi Fujioka
- Organizer
  International Symposium on Growth of III-Nitrides (ISGN-7)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] バッファー層挿入によるガラス基板上多結晶 InN の電気特性の改善2018
- Author(s)
  坂本真澄、小林篤、上野耕平、藤岡洋
- Organizer
  日本結晶成長学会　第10回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] パルススパッタ堆積法による高電子移動度n型GaN薄膜の成長と評価2018
- Author(s)
  上野耕平、柴原啓太、小林篤、藤岡洋
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Nitride Based Devices Prepared on Large Area Substrates2018
- Author(s)
  Hiroshi Fujioka
- Organizer
  Electrical Engineering Seminar
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] GaNの酸化膜形成2段階ウェットエッチング法の提案2018
- Author(s)
  清藤泰旦、牧繪哲男、藤岡洋、前田就彦
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] フレキシブルマイクロLEDの可能性2018
- Author(s)
  藤岡洋
- Organizer
  日本表面真空学会機能薄膜部会ナノ構造機能創成専門部会第9回研究会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Feasibility of Future GaN Large Area Light Emitting Devices2018
- Author(s)
  Hiroshi Fujioka, Kohei Ueno, and Atsushi Kobayashi
- Organizer
  14th International Conference on Modern Materials and Technologies (CIMTEC 2018) -8th Forum on New Materials-
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] PSD 法を用いた高濃度 p 型ドープ GaN 薄膜の物性評価2018
- Author(s)
  筆谷大河、上野耕平、小林篤、藤岡洋
- Organizer
  日本結晶成長学会　第10回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] PSD 成長した Mg ドープ GaN 薄膜の特性2018
- Author(s)
  筆谷大河、上野耕平、小林篤、藤岡洋
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Room-temperature preparation of InGaN for thin-film transistors2018
- Author(s)
  Kyohei Nakamura, Atsushi Kobayashi, Kohei Ueno, Jitsuo Ohta, Yuki Tokumoto, and Hiroshi Fujioka
- Organizer
  SPIE. Photonics West OPTO 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] ペロブスカイト型遷移金属酸化物ヘテロ界面における電荷移動のメカニズム2018
- Author(s)
  北村未歩、小林正起、簔原誠人、坂井延寿、藤岡洋、堀場弘司、組頭広志
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Tunneling contacts for LEDs with heavily Si doped GaN prepared by pulsed sputtering2018
- Author(s)
  Taiga Fudetani, Kohei Ueno, Atsushi Kobayashi, and Hiroshi Fujioka
- Organizer
  International Workshop on Nitride Semiconductors (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] イントロダクトリートーク：窒化物半導体特異構造の科学2018
- Author(s)
  藤岡　洋
- Organizer
  第65回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-ORGANIZER-16H06413
[Presentation] AlGaN/GaNヘテロ構造上Ti/Al/Ti/Auオーミック電極の高温接触抵抗評価2018
- Author(s)
  牧繪哲男、渡辺雄太朗、藤岡洋、前田就彦
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] 欠陥擬フェルミレベル制御による低補償窒化物成長の可能性2018
- Author(s)
  藤岡洋、上野耕平、小林篤
- Organizer
  日本結晶成長学会第47回結晶成長国内会議（JCCG-47）
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Feasibility of Nitride Micro-LEDs Prepared by Sputtering2018
- Author(s)
  H. Fujioka, K. Ueno, and A. Kobayashi
- Organizer
  THE 25TH INTERNATIONAL DISPLAY WORKSHOPS (IDW ’18)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] 窒化物半導体特異構造の科学　～窒化物プロセス技術の新展開～ AlGaN系窒化物スパッタエピプロセスの開発2018
- Author(s)
  藤岡洋、櫻井悠也、上野耕平、小林篤
- Organizer
  第79回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Improvement of electron mobility of polycrystalline InN on glass substrates by AlN buffer layers2018
- Author(s)
  Masumi Sakamoto, Atsushi Kobayashi, Kohei Ueno, and Hiroshi Fujioka
- Organizer
  International Symposium on Growth of III-Nitrides (ISGN-7)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Sputtering Epitaxial Growth of Nitride Materials for UV Applications2018
- Author(s)
  H. Fujioka, T. Fudetani, K. Ueno, and A. Kobayashi
- Organizer
  International Workshop on UV Materials and Devices (IWUMD-2018)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] PSD法による高電子移動度n型GaN薄膜成長2018
- Author(s)
  上野耕平、小林篤、藤岡洋
- Organizer
  日本結晶成長学会第47回結晶成長国内会議（JCCG-47）
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] PSD法による高濃度n型ドープ窒化物半導体結晶成長2018
- Author(s)
  上野耕平、筆谷大河、櫻井悠也、荒川靖章、小林篤、藤岡洋
- Organizer
  日本学術振興会　ワイドギャップ半導体光・電子デバイス第１６２委員会第110回研究会・特別公開シンポジウム
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] YSZ基板上InGaNおよびInAlN薄膜の成長とMISFET応用2018
- Author(s)
  中村享平、小林篤、上野耕平、藤岡洋
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Preparation of GaN for micro-LED displays2018
- Author(s)
  Hiroshi Fujioka
- Organizer
  International Conference on Radiation and Emission in Materials (ICREM-2018)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Materials Science and Advanced Electronics Created in Singularity Project2018
- Author(s)
  Hiroshi Fujioka
- Organizer
  The 6th Japan-China Symposium on Crystal Growth and Crystal Technology
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] ガラス基板上に成長させたc軸配向InN薄膜の電気特性2018
- Author(s)
  坂本真澄、小林篤、上野耕平、藤岡洋
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Proposal of GaN oxide-formed two-step wet etching process2018
- Author(s)
  Yasuharu Kiyoto, Tetsuo Makie, Hiroshi Fujioka, and Narihiko Maeda
- Organizer
  International Workshop on Nitride Semiconductors (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] パルススパッタ堆積法によるGaN pn接合ダイオードの作製2018
- Author(s)
  今別府秀行、上野耕平、小林篤、藤岡洋
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Characteristics of n-type GaN prepared by PSD2018
- Author(s)
  Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta, and Hiroshi Fujioka
- Organizer
  SPIE. Photonics West OPTO 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] InN transistors prepared on glass substrates with AlN buffer layers2018
- Author(s)
  Masumi Sakamoto, Atsushi Kobayashi, Kohei Ueno, and Hiroshi Fujioka
- Organizer
  International Workshop on Nitride Semiconductors (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Sputtering Epitaxial Growth of III Nitrides and Its Device Applications2018
- Author(s)
  Hiroshi Fujioka
- Organizer
  Compound Semiconductor Week (CSW 2018)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Feasibility of Low Cost Micro LEDs Prepared by Pulsed Sputtering2018
- Author(s)
  Hiroshi Fujioka, Kohei Ueno, and Atsushi Kobayashi
- Organizer
  The 18th International Meeting on Information Display (iMiD 2018)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] パルススパッタ堆積法による高Al組成AlGaN薄膜成長2018
- Author(s)
  櫻井悠也、上野耕平、小林篤、藤岡洋
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] PSD成長した高濃度不純物添加GaNのトンネル接合への応用2018
- Author(s)
  筆谷大河、上野耕平、小林篤、藤岡洋
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] 高移動度薄膜トランジスタ作製に向けた非晶質基板上へのInN結晶成長2018
- Author(s)
  小林篤、坂本真澄、中村享平、ライ・ケーシン、伊藤剛輝、上野耕平、藤岡洋
- Organizer
  日本学術振興会　ワイドギャップ半導体光・電子デバイス第１６２委員会第110回研究会・特別公開シンポジウム
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Structural and Electrical Properties of AlN and AlGaN Prepared by Pulsed Sputtering2018
- Author(s)
  Yuya Sakurai, Kohei Ueno, Atsushi Kobayashi, Hideto Miyake, and Hiroshi Fujioka
- Organizer
  International Symposium on Growth of III-Nitrides (ISGN-7)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] PSD法により形成したGaN薄膜の深い準位の評価2018
- Author(s)
  柴原啓太、上野耕平、小林篤、藤岡洋
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] 合成石英ガラス上に成長したInNの配向制御2018
- Author(s)
  坂本真澄、小林篤、上野耕平、藤岡洋
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] High electron mobility n-type GaN grown by pulsed sputtering and its application to electron devices2018
- Author(s)
  Kohei Ueno, Hideyuki Imabeppu, Atsushi Kobayashi, and Hiroshi Fujioka
- Organizer
  International Workshop on Nitride Semiconductors (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] 金属フォイル上フレキシブルμLEDディスプレーの可能性2018
- Author(s)
  藤岡洋
- Organizer
  高分子学会フォトニクスポリマー研究会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] GaN devices prepared on large area substrates2018
- Author(s)
  Hiroshi Fujioka, Kohei Ueno, and Atsushi Kobayashi
- Organizer
  EMN Angkor Meeting 2018
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Integration of III Nitrides with Foreign Substrates by Pulsed Sputtering2017
- Author(s)
  Hiroshi Fujioka, Kohei Ueno, Atsushi Kobayashi, and Jitsuo Ohta
- Organizer
  9th International Conference on Materials for Advanced Technologies (ICMAT 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] PSD法によるn型GaNショットキーダイオードの物性評価2017
- Author(s)
  今別府秀行、上野耕平、小林篤、太田実雄、藤岡洋
- Organizer
  日本結晶成長学会　第9回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Basic characteristics of GaN prepared by pulsed sputtering deposition2017
- Author(s)
  Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
- Organizer
  SPIE Photonics West OPTO 2017
- Place of Presentation
  The Moscone Center, San Francisco, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] 不純物添加GaNの位置選択エピ成長技術の開発2017
- Author(s)
  上野耕平、今別府秀行、小林篤、太田実雄、藤岡洋
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] 非晶質基板上への結晶性グラフェン膜の直接形成とGaN薄膜成長用バッファ層への応用2017
- Author(s)
  小林広師、太田実雄、上野耕平、小林篤、藤岡洋
- Organizer
  日本結晶成長学会　第9回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] PSD法による高濃度n型ドープGaNの開発と応用2017
- Author(s)
  上野耕平、荒川靖章、筆谷大河、小林篤、太田実雄、藤岡洋
- Organizer
  第46回結晶成長国内会議（JCCG-46）
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] 室温成長 InGaN をチャネル層とした薄膜トランジスタの作製2017
- Author(s)
  中村享平、小林篤、伊藤剛輝、ライ・ケーシン、森田眞理、上野耕平、太田実雄、徳本有紀、藤岡洋
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜、神奈川
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] PSD法によるn型GaNショットキーダイオードの作製2017
- Author(s)
  今別府秀行、上野耕平、小林篤、太田実雄、藤岡洋
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Characteristics of GaN films prepared by pulsed sputtering2017
- Author(s)
  H. Fujioka, K. Ueno, A. Kobayashi, and J. Ohta
- Organizer
  The 8th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] 低温パルススパッタ法を用いた窒化物系新規ヘテロ構造の作製2017
- Author(s)
  太田実雄、小林篤、上野耕平、藤岡洋
- Organizer
  日本結晶成長学会　第9回ナノ構造・エピタキシャル成長講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] 転写フリーグラフェンバッファ層を用いた非晶質基板上へのGaN薄膜成長2017
- Author(s)
  小林広師、太田実雄、上野耕平、小林篤、藤岡洋
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Development of Si-doping techniqeu for AlN by pulsed sputtering2017
- Author(s)
  Y. Sakurai, K. Ueno, A. Kobayashi, J. Ohta, and H. Fujioka
- Organizer
  The International Workshop on UV Materials and Devices 2017 (IWUMD 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] パルススパッタ堆積法によるSiドープAlN薄膜成長2017
- Author(s)
  櫻井悠也、上野耕平、小林篤、太田実雄、藤岡洋
- Organizer
  第46回結晶成長国内会議（JCCG-46）
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Highly conductive n-type GaN with high electron mobility prepared by pulsed sputtering2017
- Author(s)
  Kohei Ueno, Yasuaki Arakawa, Atsushi Kobayashi, Jitsuo Ohta, and Hiroshi Fujioka
- Organizer
  12th International Conference on Nitride Semiconductors (ICNS 12)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] PSD法による高濃度高移動度n型GaNの開発2017
- Author(s)
  上野耕平、荒川靖章、小林篤、太田実雄、藤岡洋
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜、神奈川
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] YSZ基板上へのInN系窒化物半導体の結晶成長2017
- Author(s)
  小林篤、中村享平、上野耕平、太田実雄、藤岡洋
- Organizer
  第46回結晶成長国内会議（JCCG-46）
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] ガラス基板上に室温成長させたInGaNの特性と薄膜トランジスタ応用2017
- Author(s)
  中村享平、小林篤、上野耕平、太田実雄、徳本有紀、藤岡洋
- Organizer
  日本結晶成長学会　第9回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] チャネル層にInAlNを用いた薄膜トランジスタの作製2017
- Author(s)
  中村享平、小林篤、上野耕平、太田実雄、徳本有紀、藤岡洋
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Fabrication of GaN-based LEDs by pulsed sputtering2017
- Author(s)
  Hiroshi Fujioka
- Organizer
  The Energy and Materials Research Conference (EMR 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] PSD growth of nitride materials on bulk GaN2017
- Author(s)
  Hiroshi Fujioka, Kohei Ueno, Atsushi Kobayashi, and Jitsuo Ohta
- Organizer
  10th International Workshop on Bulk Nitride Semiconductors (IWBNS-X)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Recent progress on growth of GaN by pulsed sputtering2017
- Author(s)
  Hiroshi Fujioka
- Organizer
  Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD 2017)
- Place of Presentation
  Safety Harbor, USA
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] イントロダクトリートーク：窒化物半導体特異構造の科学2017
- Author(s)
  藤岡　洋
- Organizer
  第78回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-ORGANIZER-16H06413
[Presentation] Recent Progress in PVD Preparation of GaN2017
- Author(s)
  H. Fujioka, K. Ueno, and A. Kobayashi
- Organizer
  The XIX International Workshop on The Physics of Semiconductor Devices (IWPSD 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] 非平衡状態の時間ドメイン制御による特異構造の創製2016
- Author(s)
  藤岡洋、上野耕平、小林篤、太田実雄
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ、新潟市
- Invited
- Data Source
  KAKENHI-ORGANIZER-16H06413
[Presentation] ハフニウム上に作製したGaN薄膜の特性評価2016
- Author(s)
  金惠蓮、太田実雄、小林篤、上野耕平、藤岡洋
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ、新潟
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] PSD法によるGaNへのn型ドーピング技術の開発2016
- Author(s)
  上野耕平、荒川靖章、今別府秀行、小林篤、太田実雄、藤岡洋
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ、新潟
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Challenge of GaN Substrates for Power Devices2016
- Author(s)
  Hiroshi Fujioka
- Organizer
  Workshop on Ultra-Precision Processing for Wide Bandgap Semiconductors (WUPP-2016)
- Place of Presentation
  Fleurlis Hotel, Taiwan
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] 非平衡状態の時間ドメイン制御による特異構造の創製2016
- Author(s)
  藤岡洋、上野耕平、小林篤、太田実雄
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ, 新潟
- Invited
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] High Hole Mobility p-Type GaN with Extremely Low Residual Hydrogen Concentration Prepared by Pulsed Sputtering2016
- Author(s)
  Kohei Ueno, Yasuaki Arakawa, Atsushi Kobayashi, Jitsuo Ohta, and Hiroshi Fujioka
- Organizer
  International Workshop on Nitride Semiconductors (IWN2016)
- Place of Presentation
  Hilton Orland Lake Buena Vista, Florida, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] N 極性InGaN/GaN 量子井戸構造の作製および評価2013
- Author(s)
  岸川英司，上野耕平，井上　茂，太田実雄，藤岡　洋
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] 安定化ジルコニア基板上へのN 極性InN 薄膜の成長2013
- Author(s)
  大関正彬，大久保佳奈，小林　篤，太田実雄，尾嶋正治，藤岡　洋
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] 窒化物LED 低温製造プロセスの開発2013
- Author(s)
  中村英司，上野耕平，井上　茂，太田実雄，藤岡　洋，尾嶋正治
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] 絶縁膜/ 極薄InN/YSZ 構造の作製と評価2013
- Author(s)
  大久保佳奈，小林　篤，太田実雄，尾嶋正治，藤岡　洋
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Si(110) 基板上へのGaN 薄膜成長と中間層の効果2013
- Author(s)
  近藤尭之，上野耕平，太田実雄，藤岡　洋
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] 窒化物発光素子製造プロセスの低温化2013
- Author(s)
  中村英司，上野耕平，太田実雄，藤岡洋，尾嶋正治
- Organizer
  第43回結晶成長国内会議（NCCG-43）
- Place of Presentation
  長野市生涯学習センター
- Year and Date
  2013-11-07
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] PSD 法によるパターンサファイア基板上GaN 薄膜成長2013
- Author(s)
  上野耕平，井上　茂，太田実雄，藤岡　洋，尾嶋正治
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] PSD 法によるC ドープGaN 薄膜の成長2013
- Author(s)
  渡辺拓人，丹所昂平，井上　茂，太田実雄，藤岡　洋
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] ポリマーを出発材料に用いたグラファイトシート上への窒化物薄膜結晶成長と発光素子への応用2013
- Author(s)
  太田実雄，金子俊郎，平崎哲郎，植　仁志，児玉昌也，藤岡　洋
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Characteristics of GaN devices prepared by pulsed sputtering2013
- Author(s)
  Hiroshi Fujioka
- Organizer
  5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)
- Place of Presentation
  Nagoya, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] GaN growth on graphene by pulsed sputtering deposition2013
- Author(s)
  Jeongwoo Shon，太田実雄，上野耕平，藤岡　洋
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] 非晶質基板上へ成長したInN の特性評価2013
- Author(s)
  伊藤剛輝，小林　篤，太田実雄，藤岡　洋，尾嶋正治
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] ZnO基板上へコヒーレント成長させた窒化物半導体薄膜の特性2012
- Author(s)
  小林篤，梶間智文，玉木啓晶，太田実雄，尾嶋正治，藤岡洋
- Organizer
  第42回結晶成長国内会議
- Place of Presentation
  九州大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] 高速エピタキシャル成長させたInN薄膜の特性評価2012
- Author(s)
  大関正彬、大久保佳奈、小林篤、太田実雄、尾嶋正治、藤岡洋
- Organizer
  秋季第73回応用物理学会学術講演会
- Place of Presentation
  松山大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] InGaN prepared by pulsed sputtering and its application to solar cells2012
- Author(s)
  K. Morita, M. Katoh, J. Ohta, S. Inoue, H.Fujioka
- Organizer
  4th International Symposium on Growth of III-Nitrides (ISGN-4)
- Place of Presentation
  St. Petersburg, Russia
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] YSZ(111)基板上に作製したInN薄膜の特性2012
- Author(s)
  大久保佳奈，大関正彬，小林　篤，太田実雄，尾嶋正治，藤岡　洋
- Organizer
  秋季第73回応用物理学会学術講演会
- Place of Presentation
  松山大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Improvement in crystalline quality of GaN prepared by pulsed sputtering by the use of SiNx islands2012
- Author(s)
  T. Kondo, J. Ohta, S. Inoue, A. Kobayashi, and H. Fujioka
- Organizer
  4th International Symposium on Growth of III-Nitrides (ISGN-4)
- Place of Presentation
  St. Petersburg, Russia
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Feasibility of large area nitride devices prepared by pulsed sputtering2012
- Author(s)
  Hiroshi Fujioka
- Organizer
  International Workshop on Nitride Semiconductors 2012　（IWN2012）
- Place of Presentation
  Sapporo, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] YSZ基板を用いたc面InN薄膜の高品質化2012
- Author(s)
  大久保佳奈，大関正彬，小林篤，太田実雄，尾嶋正治，藤岡洋
- Organizer
  第42回結晶成長国内会議
- Place of Presentation
  九州大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Characteristics of InN and Related Materials with Various Surface Orientations2012
- Author(s)
  Hiroshi Fujioka, Kana Ohkubo, Masaaki Ooseki, Atsushi Kobayashi and Masaharu Oshima
- Organizer
  2012 Electronic Materials Conference (EMC2012)
- Place of Presentation
  Pennsylvania, USA
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Crystal Growth of Nitride Semiconductors on Large Substrates2012
- Author(s)
  Hiroshi Fujioka
- Organizer
  CCCG-16
- Place of Presentation
  Hefei, China
- Invited
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] YSZ基板上への酸窒化インジウム混晶薄膜の作製2012
- Author(s)
  小林篤、伊藤剛輝、太田実雄、尾嶋正治、藤岡洋
- Organizer
  秋季第73回応用物理学会学術講演会
- Place of Presentation
  松山大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Comprehensive study of polarity flip mechanism at　thermally-oxidized AlN layers2012
- Author(s)
  Eiji Kishikawa, Kohei Ueno, Shigeru Inoue, Jitsuo Ohta, Masaharu Oshima, and Hiroshi Fujioka
- Organizer
  International Workshop on Nitride Semiconductors 2012　（IWN2012）
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Low-temperature growth of semipolar InAlN on YSZ substrates2012
- Author(s)
  M. Oseki, A. Kobayashi, J. Ohta, H. Fujioka, and M. Oshima
- Organizer
  International Workshop on Nitride Semiconductors 2012　（IWN2012）
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Future prospect of large area nitride devices prepared by pulsed sputtering deposition2012
- Author(s)
  Hiroshi Fujioka
- Organizer
  4th International Symposium on Growth of III-Nitrides (ISGN-4)
- Place of Presentation
  St. Petersburg, Russia
- Invited
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Nitride Devices Fabricated with Pulsed Sputtering Depositon2012
- Author(s)
  Hiroshi Fujioka
- Organizer
  Intensive Discussion on Growth of Nitride Semiconductors
- Place of Presentation
  Sendai, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Feasibility of Large Area Nitride Semiconductor Devices2012
- Author(s)
  Hiroshi Fujioka
- Organizer
  The 1st International Symposium on Single Crystals and Wafers for LEDs
- Place of Presentation
  Wonju, Korea
- Invited
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Feasibility of III-Nitride LEDs prepared on large area substrates2012
- Author(s)
  Hiroshi Fujioka
- Organizer
  2012 International Symposium on Crystal Growth
- Place of Presentation
  Seoul, Korea
- Invited
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Epitaxial growth of semipolar InAlN with high In concentrations on yttria-stabilized zirconia substrates2012
- Author(s)
  M. Oseki, A. Kobayashi, J. Ohta, H. Fujioka, and M. Oshima
- Organizer
  4th International Symposium on Growth of III-Nitrides (ISGN-4)
- Place of Presentation
  St. Petersburg, Russia
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Polarity inversion mechanism at oxidized AlN layers2012
- Author(s)
  E. Kishikawa, K. Ueno, S. Inoue, J. Ohta, H. Fujioka, and M. Oshima
- Organizer
  4th International Symposium on Growth of III-Nitrides (ISGN-4)
- Place of Presentation
  St. Petersburg, Russia
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Si(110)基板上GaN薄膜の極性制御2012
- Author(s)
  近藤尭之、太田実雄、井上茂、藤岡洋
- Organizer
  秋季第73回応用物理学会学術講演会
- Place of Presentation
  松山大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Optical and structural characteristics of nonpolar InGaN and InAlN films grown on ZnO substrates2012
- Author(s)
  Atsushi Kobayashi, Hiroaki Tamaki, JitsuoOhta, Masaharu Oshima, and Hiroshi Fujioka
- Organizer
  International Workshop on Nitride Semiconductors 2012　（IWN2012）
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Pulsed sputtering deposition of high-quality AlN on　thermally-nitrided sapphire substrates2012
- Author(s)
  Kohei Ueno, Eiji Kishikawa, Shigeru Inoue, Jitsuo Ohta, Hiroshi Fujioka, Masaharu Oshima, and Hiroyuki Fukuyama
- Organizer
  International Workshop on Nitride Semiconductors 2012　（IWN2012）
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] パルススパッタ法によるSi(110)基板上へのGaN薄膜成長と構造特性評価2012
- Author(s)
  近藤尭之，井上茂，太田実雄，藤岡洋
- Organizer
  第42回結晶成長国内会議
- Place of Presentation
  九州大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] パルススパッタ堆積法によるサファイア基板上GaN(000-1)薄膜の高品質化2012
- Author(s)
  上野耕平，中村英司，岸川英司，井上茂，太田実雄，藤岡洋，尾嶋正治
- Organizer
  第42回結晶成長国内会議
- Place of Presentation
  九州大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Characterization of ultrathin InN films grown on YSZ substrates2012
- Author(s)
  K. Okubo, A. Kobayashi, J. Ohta, M. Oshima, and H. Fujioka
- Organizer
  4th International Symposium on Growth of III-Nitrides (ISGN-4)
- Place of Presentation
  St. Petersburg, Russia
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] マイカ基板を用いたIII族窒化物LEDの作製2011
- Author(s)
  野村周平, 田村和也, 太田実雄, 井上茂, 藤岡洋
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] 窒化サファイア基板上に成長したAlN薄膜の微細構造観察2011
- Author(s)
  上野耕平, 太田実雄, 藤岡洋, 福山博之
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
- Year and Date
  2011-03-25
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] グラファイトシート上GaN青色LEDの作製2011
- Author(s)
  金子俊郎, 太田実雄, 井上茂, 藤岡洋
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Al2O3/InN界面の電子状態評価2011
- Author(s)
  大久保佳奈, 小林篤, 太田実雄, 藤岡洋, 尾嶋正治
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
- Year and Date
  2011-03-25
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] ZnO基板上への全組成域m面InAlN薄膜のエピタキシャル成長2011
- Author(s)
  梶間智文, 上野耕平, 小林篤, 太田実雄, 藤岡洋, 尾嶋正治
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
- Year and Date
  2011-03-27
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] 無極性面・半極性面ZnO基板上InGaNの偏光スイッチング2011
- Author(s)
  玉木啓晶, 小林篤, 太田実雄, 尾嶋正治, 藤岡洋
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] PSD法により成長したGaN薄膜の電気特性2011
- Author(s)
  丹所昂平, 井上茂, 太田実雄, 藤岡洋
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
- Year and Date
  2011-03-27
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] 原子散乱表面分光法による半極性面AlN/ZnOの極性判定2011
- Author(s)
  小林篤, 上野耕平, 太田実雄, 藤岡洋, 尾嶋正治, 中西繁光, 東堤秀明
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
- Year and Date
  2011-03-25
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] 高In濃度InGaNを用いた太陽電池の試作2010
- Author(s)
  井上茂, 太田実雄, 加藤雅樹, 田村和也, 藤岡洋
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Development of Future large area Group III nitride devices2010
- Author(s)
  Hiroshi Fujioka
- Organizer
  2010 International Symposium on Crystal Growth
- Place of Presentation
  seoul, Korea
- Year and Date
  2010-11-08
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Smart Sheet Technology for Optical and PV Devices2010
- Author(s)
  Hiroshi Fujioka
- Organizer
  The 2010 USTO Photovoltaics Energy Workshop
- Place of Presentation
  Algiers, Algeria
- Year and Date
  2010-05-10
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] ZnO基板上半極性面AlGaN薄膜の偏光特性評価2010
- Author(s)
  上野耕平, 小林篤, 太田実雄, 藤岡洋
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] 窒化物半導体太陽電池の将来2010
- Author(s)
  藤岡洋
- Organizer
  GaN系プラネットコンシャスデバイス・材料の現状
- Place of Presentation
  東北大学多元物質科学研究所
- Year and Date
  2010-11-05
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Growth Orientation Control of InN by Pulsed Excitation Deposition2010
- Author(s)
  Hiroshi Fujioka, Tomoaki Fujii, Atsushi Kobayashi, Jitsuo Ohta, Masaharu Oshima
- Organizer
  ELECTRONIC MATERIALS CONFERENCE
- Place of Presentation
  South Bend, U.S.A
- Year and Date
  2010-06-25
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] PSD法による高品質窒化物成長の検討2010
- Author(s)
  藤岡洋
- Organizer
  第3回窒化物半導体の高品質結晶成長とその素子応用
- Place of Presentation
  東北大学金属材料研究所
- Year and Date
  2010-10-25
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Future large area nitride devices fabricated with low temperature PXD process2010
- Author(s)
  Hiroshi Fujioka
- Organizer
  The International Workshop on Nitride semiconductors 2010(Invited)
- Place of Presentation
  U.S.A
- Year and Date
  2010-09-21
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Growth Orientation Control of InN by Pulsed Excitation Deposition2010
- Author(s)
  Hiroshi Fujioka
- Organizer
  Electronic Materials Conference(Invited)
- Place of Presentation
  U.S.A
- Year and Date
  2010-06-25
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] サハラソーラーブリーダー計画2010
- Author(s)
  藤岡洋
- Organizer
  JST-SNTTワークショップ「開発途上国の持続可能な資源開発」
- Place of Presentation
  JSTホール(東京)
- Year and Date
  2010-10-06
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Feasibility study on Future large area nitride devices2010
- Author(s)
  Hiroshi Fujioka
- Organizer
  The European Workshop on Compound Semiconductor Devices and Integrated Circuits
- Place of Presentation
  Darmstadt/Seeheim, Germany
- Year and Date
  2010-05-17
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] 放射光光電子分光による極性面・無極性面GaN/ZnOヘテロ界面の解析2010
- Author(s)
  劉江偉, 小林篤, 豊田智史, 菊池亮, 太田実雄, 藤岡洋, 組頭広志, 尾嶋正治
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] ZnO基板上への高In組成m面InAlN薄膜の成長2010
- Author(s)
  梶間智文, 上野耕平, 小林篤, 太田実雄, 藤岡洋, 尾嶋正治
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] ZnO基板上高In組成m面InGaN薄膜の偏光特性2010
- Author(s)
  玉木啓晶、小林篤、太田実雄、尾嶋正治、藤岡洋
- Organizer
  応用物理学会結晶工学分科会主催2010年・年末講演会「エレクトロニクスの将来ビジョン～発展史マップとアカデミックロードマップ～&若手ポスター発表会」
- Place of Presentation
  学習院大学
- Year and Date
  2010-12-17
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Rh(111)基板上への窒化物成長初期過程の解析2010
- Author(s)
  岡野雄幸, 井上茂, 上野耕平, 小林篤, 太田実雄, 尾嶋正治, 藤岡洋
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] FUTURE LARGE AREA NITRIDE DEVICES FABRICATED WITH LOW TEMPERATURE PXD PROCESS2010
- Author(s)
  Hiroshi Fujioka
- Organizer
  The International Workshop on Nitride semiconductors 2010 (IWN2010)
- Place of Presentation
  Tampa Florida, USA
- Year and Date
  2010-09-21
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] 半極性面AlV/InNヘテロ構造の作製と評価2010
- Author(s)
  小林篤, 藤井智明, 太田実雄, 藤岡洋, 尾嶋正治
- Organizer
  第29回電子材料シンポジウム
- Place of Presentation
  ラフォーレ修善寺
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] ZnO基板上への無極性面・半極性面InAlN薄膜の成長2010
- Author(s)
  梶間智文, 上野耕平小林篤, 太田実雄, 藤岡洋, 尾嶋正治
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学
- Year and Date
  2010-05-15
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Possibility of Large Area III-V Semiconductor Devices2010
- Author(s)
  Hiroshi Fujioka
- Organizer
  Collaborative Conference on Crystal Growth (3CG)
- Place of Presentation
  Miami, Florida, US
- Year and Date
  2010-11-29
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] パルススパッタ法による太陽電池用InGaN薄膜の作製2010
- Author(s)
  加藤雅樹, 田村和也, 井上茂, 太田実雄, 藤岡洋
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学
- Year and Date
  2010-05-15
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] BNTCA-BPTAポリマー焼結グラファイトシート上へのGaN薄膜成長2010
- Author(s)
  金子俊郎, 太田実雄, 藤岡洋, 山下順也, 羽鳥浩章, 児玉昌也, 平崎哲郎, 植仁志
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学
- Year and Date
  2010-05-15
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Feasibility study on Future large area nitride devices2010
- Author(s)
  Hiroshi Fujioka
- Organizer
  The European Workshop on Compound Semiconductor Devices and Integrated Circuits(Invited)
- Place of Presentation
  Germany
- Year and Date
  2010-05-17
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Improvement in crystalline quality of semipolar AlN (1-102) films by using ZnO substrates with self-organized nanostripes2010
- Author(s)
  Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
- Organizer
  The 3rd International Symposium on Growth of III-Nitrides (ISGN-3)
- Place of Presentation
  Montpellier, France
- Year and Date
  2010-07-06
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] ZnO基板から異方的歪みを受けたm面InGaN薄膜の偏光特性2010
- Author(s)
  玉木啓晶, 小林篤, 太田実雄, 藤岡洋, 尾嶋正治
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学
- Year and Date
  2010-05-15
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] ZnO基板上半極性面AlGaN/AlNヘテロ構造の作製と光学特性評価2010
- Author(s)
  上野耕平、小林篤、太田実雄、藤岡洋
- Organizer
  応用物理学会結晶工学分科会主催2010年・年末講演会「エレクトロニクスの将来ビジョン～発展史マップとアカデミックロードマップ～&若手ポスター発表会」
- Place of Presentation
  学習院大学
- Year and Date
  2010-12-17
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] ZnO基板から異方的歪みを受けたm面InGaN薄膜の偏光特性2010
- Author(s)
  玉木啓晶, 小林篤, 太田実雄, 尾嶋正治, 藤岡洋
- Organizer
  第29回電子材料シンポジウム
- Place of Presentation
  ラフォーレ修善寺
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] YSZ基板上に成長したInNの極性制御と成長モード2010
- Author(s)
  小林篤, 大久保佳奈, 太田実雄, 藤岡洋, 尾嶋正治
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] ZnO基板上高In組成m面InGaN薄膜の構造特牲及び偏光特性2010
- Author(s)
  玉木啓晶, 小林篤, 太田実雄, 尾嶋正治, 藤岡洋
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Room temperature epitaxial growth of group III nitride semiconductors2009
- Author(s)
  藤岡洋
- Organizer
  ROMANIAN CONFERENCE ON ADVANCED MATERIALS
- Place of Presentation
  Bucharest, Romania
- Year and Date
  2009-08-28
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] High Quality Group III Nitrides Grown on ZnO Substrates2009
- Author(s)
  H. Fujioka
- Organizer
  OPT02009
- Place of Presentation
  San Jose, USA
- Year and Date
  2009-01-25
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] 大面積化合物半導体エレクトロニクスの可能性2009
- Author(s)
  藤岡洋
- Organizer
  第13回名古屋大学VBLシンポジウム
- Place of Presentation
  名古屋大学
- Year and Date
  2009-11-10
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Room temperature growth of group III nitride crystals2009
- Author(s)
  藤岡洋
- Organizer
  2009 Japan-China Crystal Grows and Crystal Technology Symposium
- Place of Presentation
  Suita, Osaka Japan
- Year and Date
  2009-07-23
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Fabrication of flexible devices with low temperature epitaxial growth technique2009
- Author(s)
  藤岡洋
- Organizer
  MNC2009
- Place of Presentation
  Sapporo, Hokkaidou Japan
- Year and Date
  2009-11-16
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] PSD法を用いた大面積窒化物素子作製の可能性2009
- Author(s)
  藤岡洋
- Organizer
  第2回窒化物半導体ワークショップ
- Place of Presentation
  東北大学
- Year and Date
  2009-12-22
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] 大面積単結晶エレクトロニクスの展望2009
- Author(s)
  藤岡洋
- Organizer
  ポストシリコン物質・デバイス創製基盤技術アライアンス「新機能ナノエレクトロニクス」グループ分科会
- Place of Presentation
  北海道大学
- Year and Date
  2009-10-09
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Room temperature epitaxial growth of InGaN and its Application to Solar Cells2009
- Author(s)
  藤岡洋
- Organizer
  ICAM2009
- Place of Presentation
  Rio de Janeiro, Brazil
- Year and Date
  2009-09-23
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Development of room temperature epitaxial growth technique for nitride optical devices2009
- Author(s)
  藤岡洋
- Organizer
  5th International Symposium on Laser, Scintillator and Non Linear Optical Materials
- Place of Presentation
  Pisa, Italy
- Year and Date
  2009-09-05
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Room Temperature Epitaxial Growth of Nitride Semiconductors2009
- Author(s)
  藤岡洋
- Organizer
  NMDT-NGPC
- Place of Presentation
  Algiers, Algeria
- Year and Date
  2009-05-20
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Feasibility study on large area nitride devices2009
- Author(s)
  藤岡洋
- Organizer
  Satellite Workshop on Nitride Semiconductors
- Place of Presentation
  Seoul, Korea
- Year and Date
  2009-10-26
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Low Temperature Epitaxial Growth of Group III Nitrides by Pulsed Excitation Deposition2009
- Author(s)
  H. Fujioka
- Organizer
  OPT02009
- Place of Presentation
  San Jose, USA
- Year and Date
  2009-01-26
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Fabrication of semiconductor nanostructures by room temperature epitaxial growth techniques2008
- Author(s)
  H. Fujioka
- Organizer
  Thin Films 2008
- Place of Presentation
  Singapore, Singapore
- Year and Date
  2008-09-25
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Low Temperature Epitaxial Growth of Semiconductors on Metal Substrates2008
- Author(s)
  H. Fujioka
- Organizer
  SSDM2008
- Place of Presentation
  Tsukuba Japan
- Year and Date
  2008-09-25
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Group III nitride Nanostructures Prepared by Room Temperature Epitaxial Growth2008
- Author(s)
  H. Fujioka
- Organizer
  CGCT4
- Place of Presentation
  Sendai, Japan
- Year and Date
  2008-05-24
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Growth of cubic InN with high phase purity by pulsed laser deposition2008
- Author(s)
  A. Kobayashi, R. Ohba, J. Ohta, H. Fujioka, and M. Oshima
- Organizer
  2nd International symposium on growth of nitrides
- Place of Presentation
  Shuzenji, Japan
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] パルス励起堆積(PXD)法によるInN系薄膜の低温成長2007
- Author(s)
  藤岡洋
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Room Temperature Epitaixial Growth of Group III Nitrides2007
- Author(s)
  H. Fujioka
- Organizer
  The Second Polish-Japanese German Crystal Growth Meeting
- Place of Presentation
  USA
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Growth of High Quality Non-polar and Semi-polar GaN on Nearly Lattice Matched ZnO Substrates2007
- Author(s)
  H. Fujioka
- Organizer
  14th Semiconducting and Insulating Materials Conference
- Place of Presentation
  USA
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] パルス励起堆積(PXD)法による窒化物室温エピタキシャル成長2007
- Author(s)
  藤岡洋
- Organizer
  応用物理学会応用電子物性分科会研究例会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Room Temperature Epitaixial Growth of Group III Nitrides2007
- Author(s)
  H. Fujioka, S. Inoue, T. Nakano, and J. Ohta
- Organizer
  15th International conference on crystal growth
- Place of Presentation
  Salt lake city, USA
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] 窒化物半導体結晶の室温成長技術2007
- Author(s)
  藤岡洋
- Organizer
  プレISGN-2シンポジウム「未来を切り開く窒化物半導体結晶」
- Place of Presentation
  東京
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Room Temperature Epitaixial Growth of Group III Nitrides2007
- Author(s)
  H. Fujioka
- Organizer
  15th International conference on crystal growth
- Place of Presentation
  USA
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Room Temperature Epitaxial Growth of Group III Nitrides by Pulsed Excitation Deposition2007
- Author(s)
  H. Fujioka
- Organizer
  1st China-Japan Crystal Growth & Technology Symposium
- Place of Presentation
  China
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Low temperature epitaxial growth of high quality GaN2007
- Author(s)
  H. Fujioka
- Organizer
  1st International Conference on White LEDs and Solid State Lighting
- Place of Presentation
  Japan
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Characteristics of GaN Films Prepared by PXD and Their Device Applications
- Author(s)
  H. Fujioka
- Organizer
  ICMAT2013
- Place of Presentation
  Suntec International Convention & Exhibition Centre, Singapore
- Year and Date
  2013-06-30 – 2013-07-05
- Invited
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] PSD法により成長したInGaN薄膜の光学特性評価
- Author(s)
  上野耕平，野口英成，太田実雄，藤岡　洋，尾嶋正治
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Year and Date
  2014-03-17 – 2014-03-20
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Pulsed Sputtering Technique for Fabrication of Future Nitride Devices
- Author(s)
  H. Fujioka
- Organizer
  E-MRS 2014 SPRING MEETING, SYMPOSIUM K
- Place of Presentation
  Congress Center, Lille, France
- Year and Date
  2014-05-26 – 2014-05-30
- Invited
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Nitride Materials and Devices Prepared by Pulsed Sputtering
- Author(s)
  H. Fujioka
- Organizer
  International Conference on Metamaterials and Nanophysics
- Place of Presentation
  Hotel Melia Varadero, Cuba
- Year and Date
  2014-04-22 – 2014-05-01
- Invited
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] PSD 法により作製した高In 組成InGaN 薄膜の光学定数評価
- Author(s)
  野口英成, 上野耕平, 太田実雄, 小林篤, 藤岡洋
- Organizer
  第6回　窒化物半導体結晶成長講演会
- Place of Presentation
  名城大学
- Year and Date
  2014-07-25 – 2014-07-26
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Preparation of Nitride Devices by Plasma Processing
- Author(s)
  H. Fujioka
- Organizer
  ISPlasma 2014
- Place of Presentation
  名古屋大学
- Year and Date
  2014-03-02 – 2014-03-06
- Invited
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Fabrication of Nitride Devices by Pulsed Sputtering Deposition
- Author(s)
  H. Fujioka
- Organizer
  CIMTEC2014
- Place of Presentation
  Montecatini Terme, Italy
- Year and Date
  2014-06-15 – 2014-06-19
- Invited
- Data Source
  KAKENHI-PROJECT-24245040

1. OHTA Jitsuo (60392924)

# of Collaborated Projects: 2 results

# of Collaborated Products: 54 results
2. OSHIMA Masaharu (30280928)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
3. ONO Kanta (70282572)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
4. 三宅秀人 (70209881)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
5. 大渕博宣 (40312996)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. 酒井朗 (20314031)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. 川上養一 (30214604)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 小出康夫 (70195650)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 橋詰保 (80149898)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 徳本有紀 (20546866)

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
11. 上山智 (10340291)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 上野耕平

# of Collaborated Projects: 0 results

# of Collaborated Products: 12 results
13. 小林篤

# of Collaborated Projects: 0 results

# of Collaborated Products: 9 results
14. 石谷善博

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
15. MA BEI

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Fujioka Hiroshi 藤岡 洋

FUJIOKA Hiroshi 藤岡 洋

Research Projects

Research Products

Co-Researchers

Materials Science and Advanced Elecronics created by singularityArea Organizer

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Steering GroupPrincipal Investigator

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Creation of Singularity Structures by Time-Domain Control under Nonequilibrium ConditionsPrincipal Investigator

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国際活動支援班Principal Investigator

Principal Investigator

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Flexible electronics on mica substratesPrincipal Investigator

Principal Investigator

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Low temperature growth of InN films by pulsed excitation depositionPrincipal Investigator

Principal Investigator

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Development of devices with single crystalline Si grown on steelPrincipal Investigator

Principal Investigator

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Research on GaN Light Emitting Devices on Quasi-Single Crystal Metal SubstratesPrincipal Investigator

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Photon and spin control devices using semiconductor/magnetic quanturn nanostructures

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Development of ultra-thin insulator films for next-generation super-high density devices

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[Journal Article] Heavily Si-doped pulsed sputtering deposited GaN for tunneling junction contacts in UV-A light emitting diodes2021

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Journal Title

DOI

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[Journal Article] Vertical p-type GaN Schottky barrier diodes with nearly ideal thermionic emission characteristics2021

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Journal Title

DOI

Data Source

[Journal Article] Autonomous growth of NbN nanostructures on atomically flat AlN surfaces2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Combined infrared reflectance and Raman spectroscopy analysis of Si-doping limit of GaN2020

Author(s)

Fujioka Hiroshi 藤岡洋

FUJIOKA Hiroshi 藤岡洋