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FUJIOKA Hiroshi  藤岡 洋

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Researcher Number 50282570
Other IDs
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Affiliation *help 2016 – 2017 : 東京大学, 生産技術研究所, 教授
2012 – 2014 : 東京大学, 生産技術研究所, 教授
2004 – 2010 : 東京大学, 生産技術研究所, 教授
2005 – 2009 : 東大, 生産技術研究所, 教授
2002 – 2004 : 東大, 工学(系)研究科(研究院), 助教授
1999 – 2003 : 東京大学, 大学院・工学系研究科, 助教授
1998 : 東京大学, 大学院・工学系研究科, 講師
Review Section/Research Field
Principal Investigator
Science and Engineering / 無機工業化学 / Inorganic industrial materials / Functional materials/Devices
Except Principal Investigator
Electronic materials/Electric materials / Applied materials science/Crystal engineering
Keywords
Principal Investigator
GaN / 電子・電気材料 / 先端機能デバイス / 格子欠陥 / 結晶工学 / 半導体物性 / 特異構造 / MBE / 窒化ガリウム / エピタキシャル成長 … More / 窒化物半導体 / PLD / 電磁鋼板 / Steel / パルス励起堆積法 / Mgドーピング / 発光ダイオード / ユニバーサル結晶成長 / 雲母 / Interface Buffer Layers / Light Emitting Devices / III族窒化物 / フレキシブルエレクトロニクス / 表示素子 / 発光素子 / Universal crystal growth / 擬似単結晶 / スパッタ / ディスプレー / Epitaxial growth / 高速電子素子 / Gallium nitride / Silicon / 窒化インジウム / Quasi-Single Crystal Substrates / 窒化アルミニウム / Epitaxial Growth / 赤外発光素子 / シリコン / ホトルミネッセンス / Display Devices / 結晶成長 / 低温成長 / 界面バッファー層 … More
Except Principal Investigator
放射光 / photoelectron spectroscopy / MBE / 光電子分光 / Si / MnAs / MOSトランジスタ / 電気測定 / gate insulators / 磁性ドット / シリコン / non-destructive analysis / コンビナトリアル解析 / ゲート酸化膜 / ULSI / 光電子顕微鏡 / 磁性ナノ構造 / strongly correlated oxides / 量子ナノ構造 / electrical measurements / Synchrotron radiation / photoelectron emission microscopy / スピン制御 / FLAPW法 / 密度内関数法 / MBE成長 / シンクロトロン放射光 / magnetic nanostructures / 強相関酸化物 / 非破壊分析 / 酸化物磁性体 / oxinitride / combinatorial analysis / 自己組織化 / 酸化膜 / 磁性超微粒子 / synchrotron radiation / ゲート絶縁膜 / 酸窒化膜 / oxide Less
  • Research Projects

    (10results)
  • Research Products

    (192results)
  • Co-Researchers

    (11People)
  •  Materials Science and Advanced Elecronics created by singularityArea Organizer

    • Area Organizer
      藤岡 洋
    • Project Period (FY)
      2016 – 2020
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
  •  総括班Principal InvestigatorOngoing

    • Principal Investigator
      藤岡 洋
    • Project Period (FY)
      2016 – 2020
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
    • Review Section
      Science and Engineering
    • Research Institution
      The University of Tokyo
  •  非平衡状態の時間ドメイン制御による特異構造の創製Principal InvestigatorOngoing

    • Principal Investigator
      藤岡 洋
    • Project Period (FY)
      2016 – 2020
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
    • Review Section
      Science and Engineering
    • Research Institution
      The University of Tokyo
  •  国際活動支援班Principal InvestigatorOngoing

    • Principal Investigator
      藤岡 洋
    • Project Period (FY)
      2016 – 2020
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
    • Review Section
      Science and Engineering
    • Research Institution
      The University of Tokyo
  •  Flexible electronics on mica substratesPrincipal Investigator

    • Principal Investigator
      FUJIOKA Hiroshi
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Inorganic industrial materials
    • Research Institution
      The University of Tokyo
  •  Low temperature growth of InN films by pulsed excitation depositionPrincipal Investigator

    • Principal Investigator
      FUJIOKA Hiroshi
    • Project Period (FY)
      2006 – 2010
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      The University of Tokyo
  •  Development of devices with single crystalline Si grown on steelPrincipal Investigator

    • Principal Investigator
      FUJIKA Hiroshi
    • Project Period (FY)
      2004 – 2006
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Functional materials/Devices
    • Research Institution
      The University of Tokyo
  •  Research on GaN Light Emitting Devices on Quasi-Single Crystal Metal SubstratesPrincipal Investigator

    • Principal Investigator
      FUJIOKA Hiroshi
    • Project Period (FY)
      2002 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      無機工業化学
    • Research Institution
      The University of Tokyo
  •  Photon and spin control devices using semiconductor/magnetic quanturn nanostructures

    • Principal Investigator
      OSHIMA Masaharu
    • Project Period (FY)
      2000 – 2002
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      The University of Tokyo
  •  Development of ultra-thin insulator films for next-generation super-high density devices

    • Principal Investigator
      OSHIMA Masaharu
    • Project Period (FY)
      1998 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (B).
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      School of Engineering, University of Tokyo

All 2017 2016 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 Other

All Journal Article Presentation

  • [Journal Article] Low-temperature pulsed sputtering growth of InGaN multiple quantum wells for photovoltaic devices2017

    • Author(s)
      Yasuaki Arakawa, Kohei Ueno, Hidenari Noguchi, Jitsuo Ohta, and Hiroshi Fujioka
    • Journal Title

      Japanese Journal of Applied Physics

      Volume : 56 Pages : 031002-031002

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PLANNED-16H06414
  • [Journal Article] N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering2017

    • Author(s)
      Kohei Ueno, Eiji Kishikawa, Jitsuo Ohta, and Hiroshi Fujioka
    • Journal Title

      APL Materials

      Volume : 5 Pages : 026102-026102

    • Peer Reviewed / Open Access / Acknowledgement Compliant
    • Data Source
      KAKENHI-PLANNED-16H06414
  • [Journal Article] Electrical properties of Si-doped GaN prepared using pulsed sputtering2017

    • Author(s)
      Yasuaki Arakawa, Kohei Ueno, Hideyuki Imabeppu, Atsushi Kobayashi, Jitsuo Ohta, and Hiroshi Fujioka
    • Journal Title

      Applied Physics Letters

      Volume : 110 Pages : 042103-042103

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PLANNED-16H06414
  • [Journal Article] Dramatic reduction in process temperature of InGaN based light emitting diodes by pulsed sputtering growth technique2014

    • Author(s)
      E. Nakamura, K. Ueno, J. Ohta, H. Fujioka and M. Oshima
    • Journal Title

      Appl. Phys. Lett. 104, 051121 (2014).

      Volume : 104 Pages : 051121-051121

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24245040, KAKENHI-PROJECT-11J09592
  • [Journal Article] Structural properties of m-plane InAlN films grown on ZnO substrates with room-temperature GaN buffer layers2013

    • Author(s)
      T. Kajima, A. Kobayashi, K. Uen, J. Ohta, H. Fujioka, and M. Oshima
    • Journal Title

      Applied Physics Express

      Volume : 6-021003 Pages : 1-3

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Journal Article] Theoretical Investigation of the Polarity Determination for c-plane InN Grown on Yttria-Stabilized Zirconia (111) Substrates with Yttrium Surface Segregation2013

    • Author(s)
      Y. Guo, S. Inoue, A. Kobayashi, J. Ohta, and H. Fujioka
    • Journal Title

      Applied Physics Express

      Volume : 6-021002 Pages : 1-3

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Journal Article] Electron mobility of ultrathin InN grown on yttria-stabilized zirconia with two-dimensionally grown initial layers2013

    • Author(s)
      K. Okubo, A. Kobayashi, J. Ohta, M. Oshima, and H. Fujioka
    • Journal Title

      Applied Physics Letters

      Volume : 102-022103 Pages : 1-3

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Journal Article] Band Configuration of SiO2/m-Plane ZnO Heterointerface Correlated with Electrical Properties of Al/SiO2/ZnO Structures2013

    • Author(s)
      J. Liu, A. Kobayashi, K. Ueno, J. Ohta, H. Fujioka, and M. Oshima
    • Journal Title

      Japanese Journal of Applied Physics

      Volume : 52-011101 Pages : 1-4

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Journal Article] Theoretical study on initial stage of InN growth on cubic zirconia (111) substrates2013

    • Author(s)
      Y. Guo, S. Inoue, A. Kobayashi, J. Ohta, and H. Fujioka
    • Journal Title

      Physica Status Solidi RRL

      Volume : 7 Pages : 207-210

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Journal Article] Polarity control and growth mode of InN on yttria-stabilized zirconia (111) surfaces2012

    • Author(s)
      A.Kobayashi, K.Ohkubo, J. Ohta, M. Oshima, and H. Fujioka
    • Journal Title

      Physica Status Solidi A

      Volume : 209 Pages : 2251-2254

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Journal Article] Characteristics of AlN Films Grown on Thermally-Nitrided Sapphire Substrates2011

    • Author(s)
      K.Ueno, J.Ohta, H.Fujioka, H.Fukuyama
    • Journal Title

      Applied Physics Express

      Volume : 4

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Journal Article] Coherent growth of r-plane GaN films on ZnO substrates at room temperature2011

    • Author(s)
      A.Kobayashi, K.Ueno, J.Ohta, H.Fujioka
    • Journal Title

      Physica Status Solidi A

      Pages : 1-4

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Journal Article] Fabrication of densely packed array of GaN nanostructures on nano-imprinted substrates.2011

    • Author(s)
      F.Shih, A.Kobayashi, S.inoue, J.Ohta, H.Fujioka
    • Journal Title

      Journal of Crystal Growth

      Volume : 319 Pages : 102-105

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Journal Article] Growth Orientation Control of Semipolar InN Films Using Yttria-Stabilized Zirconia Substrates2010

    • Author(s)
      T.Fujii, K.Shimomoto, J.Ohta, M.Oshima, H.Fujioka
    • Journal Title

      Jpn.J.Appl.Phys. 49

      Pages : 80204-80204

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Journal Article] Characteristics of m-plane InN films grown on ZnO substrates at room temperature by pulsed laser deposition2010

    • Author(s)
      K.Shimomoto, A.Kobayashi, K.Mitamura, K.Ueno, J.Ohta, M.Oshima, H.Fujioka
    • Journal Title

      Japanese Journal of Applied Physics

      Volume : 49

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Journal Article] Growth orientation control of semipolar InN films using yttria-stabilized zirconia substrates2010

    • Author(s)
      T.Fujii, K.Shimomoto, J.Ohta, M.Oshima, H.Fujioka
    • Journal Title

      Japanese Journal of Applied Physics

      Volume : 49

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Journal Article] Band Offsets of Polar and Nonpolar GaN/ZnO Heterostructures Determined by Synchrotron Radiation Photoemission Spectroscopy2010

    • Author(s)
      J.W.Liu, A.Kobayashi, S.Toyoda, H.Kamada, A.Kikuchi, J.Ohta, H.Fujioka.
    • Journal Title

      Physica Status Solidi B

      Pages : 1-4

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Journal Article] Improvements in optical properties of semipolar r-plane GaN films grown using atomically flat ZnO substrates and room temperature epitaxial buffer layers2010

    • Author(s)
      A.Kobayashi, S.Kawano, K.Ueno, J.Ohta, H.Fujioka
    • Journal Title

      Japanese Journal of Applied Physics

      Volume : 49

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Journal Article] Structural Characteristics of GaN/InN Heterointerfaces Fabricated at Low Temperatures by Pulsed Laser Deposition2010

    • Author(s)
      T.Fujii, A.Kobayashi, K.Shimomoto, J.Ohta, M.Oshima, H.Fujioka
    • Journal Title

      Appl.Phys.Exp. 3

      Pages : 21003-21003

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Journal Article] Structural and optical properties of nonpolar AlN (11_20) films grown on ZnO (11_20) substrates with a room-temperature GaN buffer layer2010

    • Author(s)
      K.Ueno, A.Kobayashi, J.Ohta, H.Fujioka
    • Journal Title

      Japanese Journal of Applied Physics

      Volume : 49

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Journal Article] Optical polarization characteristics of m-plane InGaN films coherently grown on ZnO substrates2010

    • Author(s)
      A.Kobayashi, K.Shimomoto, J.Ohta, H.Fujioka, M.Oshima
    • Journal Title

      Physica Status Solidi (RRL)

      Volume : 4 Pages : 188-190

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Journal Article] Characteristics of thick m-plane InGaN films grown on ZnO substrates using room temperature epitaxial buffer layers2010

    • Author(s)
      K.Shimomoto, A.Kobayashi, K.Ueno, J.Ohta, M.Oshima, H.Fujioka
    • Journal Title

      Applied Physics Express

      Volume : 3

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Journal Article] Structural properties of semipolar AlxGa1-xN (1_103) films grown on ZnO substrates using room temperature epitaxial buffer layers2010

    • Author(s)
      K.Ueno, A.Kobayashi, J.Ohta, H.Fujioka
    • Journal Title

      Physica Status Solidi A

      Volume : 207 Pages : 2149-2152

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Journal Article] Improvement in the crystalline quality of semipolar AlN (1_102) films using ZnO substrates with self-organized nanostripes2010

    • Author(s)
      K.Ueno, A.Kobayashi, J.Ohta, H.Fujioka
    • Journal Title

      Applied Physics Express

      Volume : 3

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Journal Article] Investigation on the conversion efficiency of InGaN solar cells fabricated on GaN and ZnO substrates2010

    • Author(s)
      S.Inoue, M.Katoh, A.Kobayashi, J.Ohta, H.Fujioka
    • Journal Title

      Physica Status Solidi RRL

      Volume : 4 Pages : 88-90

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Journal Article] Room-temperature epitaxial growth of high quality m-plane InAlN films on nearly lattice-matched ZnO substrates2010

    • Author(s)
      T.Kajima, A.Kobayashi, K.Ueno, K.Shimomoto, T.Fujii, J.Ohta, H.Fujioka, M.Oshima
    • Journal Title

      Japanese Journal of Applied Physics

      Volume : 49

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Journal Article] Structural characteristics of semipolar InN (11 21) films grown on yttria stabilized zirconia substrates2010

    • Author(s)
      T.Fujii, A.Kobayashi, J.Ohta, M.Oshima, H.Fujioka
    • Journal Title

      Physica Status Solidi A

      Volume : 207 Pages : 2269-2271

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Journal Article] Characteristics of m-Plane InN Films Grown on ZnO Substrates at Room Temperature by Pulsed Laser Deposition2010

    • Author(s)
      K.Shimomoto, A.Kobayashi, K.Mitamura, K.Ueno, J.Ohta, M.Oshima, H.Fujioka
    • Journal Title

      Jpn.J.Appl.Phys. 49

      Pages : 80202-80202

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Journal Article] Optical polarization characteristics of m-plane InGaN films coherently grown on ZnO substrates2010

    • Author(s)
      A.Kobayashi, K.Shimomoto, J.Ohta, H.Fujioka, M.Oshima
    • Journal Title

      Phys.Status Solidi (RRL) 4

      Pages : 188-188

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Journal Article] Characteristics of thick m-plane InGaN films grown on ZnO substrates using room temperature epitaxial buffer layers2010

    • Author(s)
      K.Shimomoto, A.Kobayashi, K.Ueno, J.Ohta, M.Oshima, H.Fujioka
    • Journal Title

      Appl.Phys.Exp. 3

      Pages : 61001-61001

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Journal Article] Fabrication and Characterization of AlN/InN Heterostructures2009

    • Author(s)
      T.Fujii, K.Shimomoto, R.Ohba, Y.Toyoshima, K.Horiba, J.Ohta, H.Fujioka, M.Oshima, S.Ueda, H.Yoshikawa, K.Kobayashi
    • Journal Title

      Appl Phys.Exp. 2

      Pages : 11002-11002

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Journal Article] Epitaxial growth of high purity cubic InN films on MgO substrates using HfN buffer layers by pulsed laser deposition2009

    • Author(s)
      R.Ohba, J.Ohta, K.Shimomoto, T.Fujii, K.Okamoto, A.Aoyama, T.Nakano, A.Kobayashi, H.Fujioka, M.Oshima
    • Journal Title

      J.Solid State Chemistry 182

      Pages : 2887-2887

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Journal Article] Room-Temperature Epitaxial Growth of High Quality AlN on SiC by Pulsed Sputtering Deposition2009

    • Author(s)
      K. Sato, J. Ohta, S. Inoue, A. Kobayashi, and H. Fujioka
    • Journal Title

      Appl. Phys. Exp. 2

      Pages : 11003-11003

    • Data Source
      KAKENHI-PLANNED-18069003
  • [Journal Article] Low-temperature growth of high quality AlN films on carbon face 6H-SiC2008

    • Author(s)
      M.-H.Kim, J.Ohta, A.Kobayashi, H.Fujioka, M.Oshima
    • Journal Title

      Physica Status Solidi - Rapid Research Letters 2

      Pages : 13-13

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Journal Article] Low temperature Epitaxial Growth of GaN films on LiGaO2 substrates2007

    • Author(s)
      K.Sakurada, A.Kobayashi, Y.Kawaguchi, J.Ohta, H.Fujioka
    • Journal Title

      Applied Physics Letters (accepted for press)

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Room temperature epitaxial growth of m-plane GaN on lattice-matched ZnO substrates2007

    • Author(s)
      A.Kobayashi, S.Kawano, Y.Kawaguchi, J.Ohta, H.Fujioka
    • Journal Title

      Applied Physics Letters 90

      Pages : 41908-41908

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Growth temperature dependence of structural properties for AlN films on ZnO (000-1) substrates2007

    • Author(s)
      K.Ueno, A.Kobayashi, J.Ohta, H.Fujioka
    • Journal Title

      Applied Physics Letters 90

      Pages : 141908-141908

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Epitaxial growth mechanisms of AlN on SiC substrates at room temperature2007

    • Author(s)
      M.H.Kim, J.Ohta, A.Kobayashi, H.Fujioka, M.Oshima
    • Journal Title

      Appl.Phys.Lett. 91

      Pages : 151903-151903

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Journal Article] Room temperature epitaxial growth of m-plane GaN on lattice-matched ZnO substrates2007

    • Author(s)
      A.Kobayashi, S.Kawano, Y.Kawaguchi, J.Ohta, H.Fujioka
    • Journal Title

      Applied Physics Letters 90

      Pages : 41908-41908

    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Growth temperature dependence of structural properties for A1N films on ZnO (000-1) substrates2007

    • Author(s)
      K.Ueno, A.Kobayashi, J.Ohta, H.Fujioka
    • Journal Title

      Applied Physics Letters 90

      Pages : 141908-141908

    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Room temperature epitaxial growth of m-plane GaN on lattice-matched ZnO substrates2007

    • Author(s)
      A. Kobayashi, S. Kawano, Y. Kawaguchi, J. Ohta, and H. Fujioka
    • Journal Title

      Appl. Phys. Lett. 90

      Pages : 41908-41908

    • Data Source
      KAKENHI-PLANNED-18069003
  • [Journal Article] Growth of InN films on spinel substrates by pulsed laser deposition2007

    • Author(s)
      K. Mitamura, J. Ohta, H. Fujioka, and M. Oshima
    • Journal Title

      physica status solidi (rapid research letters) 5

      Pages : 211-211

    • Data Source
      KAKENHI-PLANNED-18069003
  • [Journal Article] Low temperature Epitxial Growth of GaN films on LiGa02 substrates2007

    • Author(s)
      K.Sakurada, A.Kobayashi, Y.Kawaguchi, J.Ohta, H.Fujioka
    • Journal Title

      Applied Physics Letters (accepted for press)

    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Epitaxial growth of GaN on copper substrates2006

    • Author(s)
      S.Inoue, K.Okamoto, N.Matsuki, T.W.Kim, H.Fujioka
    • Journal Title

      Applied Physics Letters 88

      Pages : 261910-261910

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] P-type activation of AlGaN by hydrogen desorption using catalytic Ni films2006

    • Author(s)
      T.Naono, H.Fujioka, J.Okabayashi, M.Oshima, H.Miki
    • Journal Title

      Applied Physics Letters 88

      Pages : 152114-152114

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Characteristics of single crystalline AlN films grown on Ru(0001) substrates2006

    • Author(s)
      S.Inoue, K.Okamoto, T.Nakano, H.Fujioka
    • Journal Title

      Journal of Crystal Growth 297

      Pages : 317-317

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Epitaxial growth of AlN on Cu(111) substrates using pulsed laser deposition2006

    • Author(s)
      S.Inoue, K.Okamoto, N.Matsuki, T.-W.Kim, H.Fujioka
    • Journal Title

      Journal of Crystal Growth 289

      Pages : 574-574

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Characteristics of single crystalline A1N films grown on Ru(0001) substrates2006

    • Author(s)
      S.Inoue, K.Okamoto, T.Nakano, H.Fujioka
    • Journal Title

      Journal of Crystal Growth 297

      Pages : 317-317

    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Epitaxial growth of A1N on Cu(111) substrates using pulsed laser deposition2006

    • Author(s)
      S.Inoue, K.Okamoto, N.Matsuki, T.-W.Kim, H.Fujioka
    • Journal Title

      Journal of Crystal Growth 289

      Pages : 574-574

    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Epitaxial growth of GaN on copper substrates2006

    • Author(s)
      S.Inoue, K.Okamoto, N.Matsuki, T.W.Kim, H.Fujioka
    • Journal Title

      Applied Physics Letters 88

      Pages : 261910-261910

    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] P-type activation of A1GaN by hydrogen desorption using catalytic Ni films2006

    • Author(s)
      T.Naono, H.Fujioka, J.Okabayashi, M.Oshima, H.Miki
    • Journal Title

      Applied Physics Letters 88

      Pages : 152114-152114

    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] GaN Heteroepitaxial Growth on LiTaO3(0001) Step Substrates by Pulsed Laser Deposition2005

    • Author(s)
      Y.Tsuchiya, A.Kobayashi, J.Ohta, H.Fujioka, M.Oshima
    • Journal Title

      Jap. J. of Appl. Phys. 44

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Epitaxial growth of InN on nearly lattice-matched (Mn,Zn)Fe2O42005

    • Author(s)
      J.Ohta, K.Mitamura, A.Kobayashi, T.Honke, H.Fujioka, M.Oshima
    • Journal Title

      Solid State Communications 137

      Pages : 208-208

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Characteristics of single-crystal AIN films grown on ferromagnetic metal substrates2005

    • Author(s)
      K.Okamoto, S.Inoue, N.Matsuki, T.-W.Kim, H.Fujioka, M.Oshima
    • Journal Title

      physica status solidi (a) 202

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Photoemission study on interfacial reaction of Ti/n-type GaN2005

    • Author(s)
      T.Naono, J.Okabayashi, S.Toyoda, H.Fujioka, M.Oshima, H.Hamamatsu
    • Journal Title

      Applied Scurface Science 244

      Pages : 277-277

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Room-temperature epitaxial growth of GaN on lattice-matched ZrB_2 substrates by pulsed-laser deposition2005

    • Author(s)
      Y.Kawaguchi, J.Ohta, A.Kobayashi, H.Fujioka
    • Journal Title

      Applied Phyics Letters 87

      Pages : 221907-221907

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] GaN heteroepitaxial growth on LiNbO3(0001) step substrates with AlN buffer layers2005

    • Author(s)
      Y.Tsuchiya, A.Kobayashi, J.Ohta, H.Fujioka, M.Oshima
    • Journal Title

      physica status solidi (a) 202

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Heteroepitaxial growth of gallium nitride on muscovite mica plates by pulsed laser deposition2005

    • Author(s)
      N.Matsuki, T.-W.Kim, J.Ohta, H.Fujioka
    • Journal Title

      Solid State Communications 136

      Pages : 338-338

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] GaN heteroepitaxial growth on LiNbO3(0001) step substrates with AlN buffer layers2005

    • Author(s)
      Y.Tsuchiya, A.Kobayashi, J.Ohta, H.Fujioka, M.Oshima
    • Journal Title

      physica status solidi (a) 202

    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Room-temperature epitaxial growth of GaN on lattice-matched ZrB_2 substrates by pulsed-laser deposition2005

    • Author(s)
      Y.Kawaguchi, J.Ohta, A.Kobayashi, H.Fujioka
    • Journal Title

      Applied Physics Letters 87

      Pages : 221907-221907

    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] GaN Heteroepitaxial Growth on LiTaO3(0001) Step Substrates by Pulsed Laser Deposition2005

    • Author(s)
      Y.Tsuchiya, A.Kobayashi, J.Ohta, H.Fujioka, M.Oshima
    • Journal Title

      Jap.J.of Appl.Phys. 44

    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Epitaxial growth of InN on nearly lattice-matched (Mn,Zn)Fe2O42005

    • Author(s)
      J.Ohta, K.Mitamura, A.Kobayashi, T.Honke, H.Fujioka, M.Oshima
    • Journal Title

      Solid State Communications 137

      Pages : 208-208

    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Photoemission study on interfacial reaction of Ti/n-type GaN2005

    • Author(s)
      T.Naono, J.Okabayashi, S.Toyoda, H.Fujioka, M.Oshima, H.Hamamatsu
    • Journal Title

      Applied Surface Science 244

      Pages : 277-277

    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Characteristics of single-crystal AlN films grown on ferromagnetic metal substrates2005

    • Author(s)
      K.Okamoto, S.Inoue, N.Matsuki, T.-W.Kim, H.Fujioka, M.Oshima
    • Journal Title

      physica status solidi (a) 202

    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Heteroepitaxial growth of gallium nitride on muscovite mica plates by pulsed laser deposition2005

    • Author(s)
      N.Matsuki, T.-W.Kim, J.Ohta, H.Fujioka
    • Journal Title

      Solid State Communications 136

      Pages : 338-338

    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Synchrotron-radiation deep level transient spectroscopy for defect characterization of semiconductors2004

    • Author(s)
      H.Fujioka et al.
    • Journal Title

      Applied Physics Letters 85

      Pages : 413-413

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Epitaxial Growth of InN on c-Plane Sapphire by PLD with RF Nitrogen Radical Source2004

    • Author(s)
      J.Ohta, T.Honke, H.Fujioka, M.Oshima
    • Journal Title

      Thin Solid Films 457

      Pages : 109-109

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Synchrotron-radiation deep level transient spectroscopy for defect characterization of semiconductors2004

    • Author(s)
      H.Fujioka, T.Sekiya, Y.Kuzuoka, M.Oshima, H.Usuda, N.Hirashita, M.Niwa
    • Journal Title

      Applied Physics Letters 85

      Pages : 413-413

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] A pulsed laser ablaion/plasma chemical vapor deposition tandem system for combinatorial device fabrication2004

    • Author(s)
      N.Matsuki, Y.Abiko, M.Kobayashi, H.Fujioka, H.Koinuma
    • Journal Title

      Applied Physics 79

      Pages : 1413-1413

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Experimental and theoretical investigation on structural properties of InN grown on sapphire2004

    • Author(s)
      K.Fujiwara, A.Ishii, J.Ohta, H.Fujioka, M.Oshima
    • Journal Title

      Thin Solid Films 464/465

      Pages : 112-112

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] InN epitaxial growths on Yttria stabilized Zirconia (111) step substrates2004

    • Author(s)
      T.Honke, H.Fujioka, J.Ohta, M.Oshima
    • Journal Title

      Journal of Vacuum Science and Technology A 22

      Pages : 2487-2487

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Structural characterizationof group III nitrides grown by PLD2004

    • Author(s)
      H.Takahashi, J.Ohta, H.Fujioka, M.Oshima, M.Kimura
    • Journal Title

      Thin Solid Films 457

      Pages : 114-114

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Synchrotron-radiation deep level transient spectroscopy for defect characterization of semiconductors2004

    • Author(s)
      H.Fujioka, T.Sekiya, Y.Kuzuoka, M.Oshima, H.Usuda, N.Hirashima
    • Journal Title

      Applied Physics Letters 85

      Pages : 413-413

    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] A pulsed laser ablation / plasma chemical vapor deposition tandem system for combinatorial device fabrication2004

    • Author(s)
      N.Matsuki, Y.Abiko, M.Kobayashi, H.Fujioka, H.Koinuma
    • Journal Title

      Applied Physics 79

      Pages : 1413-1413

    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Experimental and theoretical investigation on structural properties of InN grown on sapphire2004

    • Author(s)
      K.Fujiwara, A.Ishii, J.Ohta, H.Fujioka, M.Ohsima
    • Journal Title

      Thin Solid Films 464/465

      Pages : 112-112

    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] InN epitaxial growths on Yttria stabilized Zirconia (111) step substrates2004

    • Author(s)
      T.Honke, H.Fujioka, J.Ohta, M.Oshima
    • Journal Title

      Journal of Vacuum Science and Technology A 22

      Pages : 2487-2487

    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Structural characterizationof group III nitrides grown by PLD2004

    • Author(s)
      H.Takahashi, J.Ohta, H.Fujioka, M.Oshima, M.Kimura
    • Journal Title

      Thin Solid Films 457

      Pages : 114-114

    • Data Source
      KAKENHI-PROJECT-16205022
  • [Journal Article] Epitaxial Growth of InN on c-Plane Sapphire by PLD with RF Nitrogen Radical Source2004

    • Author(s)
      J.Ohta, T.Honke, H.Fujioka, M.Oshima
    • Journal Title

      Thin Solid Films 457

      Pages : 109-109

    • Data Source
      KAKENHI-PROJECT-16205022
  • [Presentation] Recent progress on growth of GaN by pulsed sputtering2017

    • Author(s)
      Hiroshi Fujioka
    • Organizer
      Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD 2017)
    • Place of Presentation
      Safety Harbor, USA
    • Int'l Joint Research / Invited
    • Data Source
      KAKENHI-PLANNED-16H06414
  • [Presentation] PSD法による高濃度高移動度n型GaNの開発2017

    • Author(s)
      上野耕平、荒川靖章、小林篤、太田実雄、藤岡洋
    • Organizer
      第64回 応用物理学会 春季学術講演会
    • Place of Presentation
      パシフィコ横浜、神奈川
    • Data Source
      KAKENHI-PLANNED-16H06414
  • [Presentation] 室温成長 InGaN をチャネル層とした薄膜トランジスタの作製2017

    • Author(s)
      中村 享平、小林 篤、伊藤 剛輝、ライ・ ケーシン、森田 眞理、上野 耕平、太田 実雄、徳本 有紀、藤岡 洋
    • Organizer
      第64回 応用物理学会 春季学術講演会
    • Place of Presentation
      パシフィコ横浜、神奈川
    • Data Source
      KAKENHI-PLANNED-16H06414
  • [Presentation] Basic characteristics of GaN prepared by pulsed sputtering deposition2017

    • Author(s)
      Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
    • Organizer
      SPIE Photonics West OPTO 2017
    • Place of Presentation
      The Moscone Center, San Francisco, USA
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06414
  • [Presentation] 非平衡状態の時間ドメイン制御による特異構造の創製2016

    • Author(s)
      藤岡洋、上野耕平、小林篤、太田実雄
    • Organizer
      第77回 応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ、新潟市
    • Invited
    • Data Source
      KAKENHI-ORGANIZER-16H06413
  • [Presentation] High Hole Mobility p-Type GaN with Extremely Low Residual Hydrogen Concentration Prepared by Pulsed Sputtering2016

    • Author(s)
      Kohei Ueno, Yasuaki Arakawa, Atsushi Kobayashi, Jitsuo Ohta, and Hiroshi Fujioka
    • Organizer
      International Workshop on Nitride Semiconductors (IWN2016)
    • Place of Presentation
      Hilton Orland Lake Buena Vista, Florida, USA
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06414
  • [Presentation] 非平衡状態の時間ドメイン制御による特異構造の創製2016

    • Author(s)
      藤岡洋、上野耕平、小林篤、太田実雄
    • Organizer
      第77回 応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ, 新潟
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06414
  • [Presentation] Challenge of GaN Substrates for Power Devices2016

    • Author(s)
      Hiroshi Fujioka
    • Organizer
      Workshop on Ultra-Precision Processing for Wide Bandgap Semiconductors (WUPP-2016)
    • Place of Presentation
      Fleurlis Hotel, Taiwan
    • Int'l Joint Research / Invited
    • Data Source
      KAKENHI-PLANNED-16H06414
  • [Presentation] PSD法によるGaNへのn型ドーピング技術の開発2016

    • Author(s)
      上野耕平、荒川靖章、今別府秀行、小林篤、太田実雄、藤岡洋
    • Organizer
      第77回 応用物理学会 秋季学術講演会
    • Place of Presentation
      朱鷺メッセ、新潟
    • Data Source
      KAKENHI-PLANNED-16H06414
  • [Presentation] ハフニウム上に作製したGaN薄膜の特性評価2016

    • Author(s)
      金惠蓮、太田実雄、小林篤、上野耕平、藤岡洋
    • Organizer
      第77回 応用物理学会 秋季学術講演会
    • Place of Presentation
      朱鷺メッセ、新潟
    • Data Source
      KAKENHI-PLANNED-16H06414
  • [Presentation] Characteristics of GaN devices prepared by pulsed sputtering2013

    • Author(s)
      Hiroshi Fujioka
    • Organizer
      5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)
    • Place of Presentation
      Nagoya, Japan
    • Invited
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] Si(110) 基板上へのGaN 薄膜成長と中間層の効果2013

    • Author(s)
      近藤尭之,上野耕平,太田実雄,藤岡 洋
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] PSD 法によるパターンサファイア基板上GaN 薄膜成長2013

    • Author(s)
      上野耕平,井上 茂,太田実雄,藤岡 洋,尾嶋正治
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] 安定化ジルコニア基板上へのN 極性InN 薄膜の成長2013

    • Author(s)
      大関正彬,大久保佳奈,小林 篤,太田実雄,尾嶋正治,藤岡 洋
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] 絶縁膜/ 極薄InN/YSZ 構造の作製と評価2013

    • Author(s)
      大久保佳奈,小林 篤,太田実雄,尾嶋正治,藤岡 洋
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] 非晶質基板上へ成長したInN の特性評価2013

    • Author(s)
      伊藤剛輝,小林 篤,太田実雄,藤岡 洋,尾嶋正治
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] N 極性InGaN/GaN 量子井戸構造の作製および評価2013

    • Author(s)
      岸川英司,上野耕平,井上 茂,太田実雄,藤岡 洋
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] 窒化物LED 低温製造プロセスの開発2013

    • Author(s)
      中村英司,上野耕平,井上 茂,太田実雄,藤岡 洋,尾嶋正治
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] ポリマーを出発材料に用いたグラファイトシート上への窒化物薄膜結晶成長と発光素子への応用2013

    • Author(s)
      太田実雄,金子俊郎,平崎哲郎,植 仁志,児玉昌也,藤岡 洋
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] GaN growth on graphene by pulsed sputtering deposition2013

    • Author(s)
      Jeongwoo Shon,太田実雄,上野耕平,藤岡 洋
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] PSD 法によるC ドープGaN 薄膜の成長2013

    • Author(s)
      渡辺拓人,丹所昂平,井上 茂,太田実雄,藤岡 洋
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] 窒化物発光素子製造プロセスの低温化2013

    • Author(s)
      中村英司,上野耕平,太田実雄,藤岡洋,尾嶋正治
    • Organizer
      第43回結晶成長国内会議(NCCG-43)
    • Place of Presentation
      長野市生涯学習センター
    • Year and Date
      2013-11-07
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] Comprehensive study of polarity flip mechanism at thermally-oxidized AlN layers2012

    • Author(s)
      Eiji Kishikawa, Kohei Ueno, Shigeru Inoue, Jitsuo Ohta, Masaharu Oshima, and Hiroshi Fujioka
    • Organizer
      International Workshop on Nitride Semiconductors 2012 (IWN2012)
    • Place of Presentation
      Sapporo, Japan
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] Low-temperature growth of semipolar InAlN on YSZ substrates2012

    • Author(s)
      M. Oseki, A. Kobayashi, J. Ohta, H. Fujioka, and M. Oshima
    • Organizer
      International Workshop on Nitride Semiconductors 2012 (IWN2012)
    • Place of Presentation
      Sapporo, Japan
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] Nitride Devices Fabricated with Pulsed Sputtering Depositon2012

    • Author(s)
      Hiroshi Fujioka
    • Organizer
      Intensive Discussion on Growth of Nitride Semiconductors
    • Place of Presentation
      Sendai, Japan
    • Invited
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] Crystal Growth of Nitride Semiconductors on Large Substrates2012

    • Author(s)
      Hiroshi Fujioka
    • Organizer
      CCCG-16
    • Place of Presentation
      Hefei, China
    • Invited
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] Feasibility of III-Nitride LEDs prepared on large area substrates2012

    • Author(s)
      Hiroshi Fujioka
    • Organizer
      2012 International Symposium on Crystal Growth
    • Place of Presentation
      Seoul, Korea
    • Invited
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] YSZ基板上への 酸窒化インジウム混晶薄膜の作製2012

    • Author(s)
      小林篤、伊藤剛輝、太田実雄、尾嶋正治、藤岡洋
    • Organizer
      秋季 第73回応用物理学会学術講演会
    • Place of Presentation
      松山大学
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] Si(110)基板上GaN薄膜の極性制御2012

    • Author(s)
      近藤尭之、太田実雄、井上茂、藤岡洋
    • Organizer
      秋季 第73回応用物理学会学術講演会
    • Place of Presentation
      松山大学
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] YSZ(111)基板上に作製したInN薄膜の特性2012

    • Author(s)
      大久保佳奈,大関正彬,小林 篤,太田実雄,尾嶋正治,藤岡 洋
    • Organizer
      秋季 第73回応用物理学会学術講演会
    • Place of Presentation
      松山大学
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] 高速エピタキシャル成長させたInN薄膜の特性評価2012

    • Author(s)
      大関正彬、大久保佳奈、小林篤、太田実雄、尾嶋正治、藤岡洋
    • Organizer
      秋季 第73回応用物理学会学術講演会
    • Place of Presentation
      松山大学
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] ZnO基板上へコヒーレント成長させた窒化物半導体薄膜の特性2012

    • Author(s)
      小林篤,梶間智文,玉木啓晶,太田実雄,尾嶋正治,藤岡洋
    • Organizer
      第42回結晶成長国内会議
    • Place of Presentation
      九州大学
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] パルススパッタ堆積法によるサファイア基板上GaN(000-1)薄膜の高品質化2012

    • Author(s)
      上野耕平,中村英司,岸川英司,井上茂,太田実雄,藤岡洋,尾嶋正治
    • Organizer
      第42回結晶成長国内会議
    • Place of Presentation
      九州大学
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] パルススパッタ法によるSi(110)基板上へのGaN薄膜成長と構造特性評価2012

    • Author(s)
      近藤尭之,井上茂,太田実雄,藤岡洋
    • Organizer
      第42回結晶成長国内会議
    • Place of Presentation
      九州大学
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] YSZ基板を用いたc面InN薄膜の高品質化2012

    • Author(s)
      大久保佳奈,大関正彬,小林篤,太田実雄,尾嶋正治,藤岡洋
    • Organizer
      第42回結晶成長国内会議
    • Place of Presentation
      九州大学
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] Characteristics of InN and Related Materials with Various Surface Orientations2012

    • Author(s)
      Hiroshi Fujioka, Kana Ohkubo, Masaaki Ooseki, Atsushi Kobayashi and Masaharu Oshima
    • Organizer
      2012 Electronic Materials Conference (EMC2012)
    • Place of Presentation
      Pennsylvania, USA
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] Epitaxial growth of semipolar InAlN with high In concentrations on yttria-stabilized zirconia substrates2012

    • Author(s)
      M. Oseki, A. Kobayashi, J. Ohta, H. Fujioka, and M. Oshima
    • Organizer
      4th International Symposium on Growth of III-Nitrides (ISGN-4)
    • Place of Presentation
      St. Petersburg, Russia
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] Feasibility of large area nitride devices prepared by pulsed sputtering2012

    • Author(s)
      Hiroshi Fujioka
    • Organizer
      International Workshop on Nitride Semiconductors 2012 (IWN2012)
    • Place of Presentation
      Sapporo, Japan
    • Invited
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] Polarity inversion mechanism at oxidized AlN layers2012

    • Author(s)
      E. Kishikawa, K. Ueno, S. Inoue, J. Ohta, H. Fujioka, and M. Oshima
    • Organizer
      4th International Symposium on Growth of III-Nitrides (ISGN-4)
    • Place of Presentation
      St. Petersburg, Russia
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] Characterization of ultrathin InN films grown on YSZ substrates2012

    • Author(s)
      K. Okubo, A. Kobayashi, J. Ohta, M. Oshima, and H. Fujioka
    • Organizer
      4th International Symposium on Growth of III-Nitrides (ISGN-4)
    • Place of Presentation
      St. Petersburg, Russia
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] InGaN prepared by pulsed sputtering and its application to solar cells2012

    • Author(s)
      K. Morita, M. Katoh, J. Ohta, S. Inoue, H.Fujioka
    • Organizer
      4th International Symposium on Growth of III-Nitrides (ISGN-4)
    • Place of Presentation
      St. Petersburg, Russia
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] Improvement in crystalline quality of GaN prepared by pulsed sputtering by the use of SiNx islands2012

    • Author(s)
      T. Kondo, J. Ohta, S. Inoue, A. Kobayashi, and H. Fujioka
    • Organizer
      4th International Symposium on Growth of III-Nitrides (ISGN-4)
    • Place of Presentation
      St. Petersburg, Russia
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] Feasibility of Large Area Nitride Semiconductor Devices2012

    • Author(s)
      Hiroshi Fujioka
    • Organizer
      The 1st International Symposium on Single Crystals and Wafers for LEDs
    • Place of Presentation
      Wonju, Korea
    • Invited
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] Future prospect of large area nitride devices prepared by pulsed sputtering deposition2012

    • Author(s)
      Hiroshi Fujioka
    • Organizer
      4th International Symposium on Growth of III-Nitrides (ISGN-4)
    • Place of Presentation
      St. Petersburg, Russia
    • Invited
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] Optical and structural characteristics of nonpolar InGaN and InAlN films grown on ZnO substrates2012

    • Author(s)
      Atsushi Kobayashi, Hiroaki Tamaki, JitsuoOhta, Masaharu Oshima, and Hiroshi Fujioka
    • Organizer
      International Workshop on Nitride Semiconductors 2012 (IWN2012)
    • Place of Presentation
      Sapporo, Japan
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] Pulsed sputtering deposition of high-quality AlN on thermally-nitrided sapphire substrates2012

    • Author(s)
      Kohei Ueno, Eiji Kishikawa, Shigeru Inoue, Jitsuo Ohta, Hiroshi Fujioka, Masaharu Oshima, and Hiroyuki Fukuyama
    • Organizer
      International Workshop on Nitride Semiconductors 2012 (IWN2012)
    • Place of Presentation
      Sapporo, Japan
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] ZnO基板上への全組成域m面InAlN薄膜のエピタキシャル成長2011

    • Author(s)
      梶間智文, 上野耕平, 小林篤, 太田実雄, 藤岡洋, 尾嶋正治
    • Organizer
      春季第58回応用物理学関係連合講演会
    • Place of Presentation
      (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
    • Year and Date
      2011-03-27
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] 窒化サファイア基板上に成長したAlN薄膜の微細構造観察2011

    • Author(s)
      上野耕平, 太田実雄, 藤岡洋, 福山博之
    • Organizer
      春季第58回応用物理学関係連合講演会
    • Place of Presentation
      (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
    • Year and Date
      2011-03-25
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] PSD法により成長したGaN薄膜の電気特性2011

    • Author(s)
      丹所昂平, 井上茂, 太田実雄, 藤岡洋
    • Organizer
      春季第58回応用物理学関係連合講演会
    • Place of Presentation
      (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
    • Year and Date
      2011-03-27
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] グラファイトシート上GaN青色LEDの作製2011

    • Author(s)
      金子俊郎, 太田実雄, 井上茂, 藤岡洋
    • Organizer
      春季第58回応用物理学関係連合講演会
    • Place of Presentation
      (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
    • Year and Date
      2011-03-24
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] マイカ基板を用いたIII族窒化物LEDの作製2011

    • Author(s)
      野村周平, 田村和也, 太田実雄, 井上茂, 藤岡洋
    • Organizer
      春季第58回応用物理学関係連合講演会
    • Place of Presentation
      (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
    • Year and Date
      2011-03-24
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] 無極性面・半極性面ZnO基板上InGaNの偏光スイッチング2011

    • Author(s)
      玉木啓晶, 小林篤, 太田実雄, 尾嶋正治, 藤岡洋
    • Organizer
      春季第58回応用物理学関係連合講演会
    • Place of Presentation
      (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
    • Year and Date
      2011-03-26
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] 原子散乱表面分光法による半極性面AlN/ZnOの極性判定2011

    • Author(s)
      小林篤, 上野耕平, 太田実雄, 藤岡洋, 尾嶋正治, 中西繁光, 東堤秀明
    • Organizer
      春季第58回応用物理学関係連合講演会
    • Place of Presentation
      (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
    • Year and Date
      2011-03-25
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Al2O3/InN界面の電子状態評価2011

    • Author(s)
      大久保佳奈, 小林篤, 太田実雄, 藤岡洋, 尾嶋正治
    • Organizer
      春季第58回応用物理学関係連合講演会
    • Place of Presentation
      (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
    • Year and Date
      2011-03-25
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] ZnO基板上への無極性面・半極性面InAlN薄膜の成長2010

    • Author(s)
      梶間智文, 上野耕平 小林篤, 太田実雄, 藤岡洋, 尾嶋正治
    • Organizer
      第2回窒化物半導体結晶成長講演会
    • Place of Presentation
      三重大学
    • Year and Date
      2010-05-15
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Smart Sheet Technology for Optical and PV Devices2010

    • Author(s)
      Hiroshi Fujioka
    • Organizer
      The 2010 USTO Photovoltaics Energy Workshop
    • Place of Presentation
      Algiers, Algeria
    • Year and Date
      2010-05-10
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Feasibility study on Future large area nitride devices2010

    • Author(s)
      Hiroshi Fujioka
    • Organizer
      The European Workshop on Compound Semiconductor Devices and Integrated Circuits
    • Place of Presentation
      Darmstadt/Seeheim, Germany
    • Year and Date
      2010-05-17
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Growth Orientation Control of InN by Pulsed Excitation Deposition2010

    • Author(s)
      Hiroshi Fujioka, Tomoaki Fujii, Atsushi Kobayashi, Jitsuo Ohta, Masaharu Oshima
    • Organizer
      ELECTRONIC MATERIALS CONFERENCE
    • Place of Presentation
      South Bend, U.S.A
    • Year and Date
      2010-06-25
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] 高In濃度InGaNを用いた太陽電池の試作2010

    • Author(s)
      井上茂, 太田実雄, 加藤雅樹, 田村和也, 藤岡洋
    • Organizer
      秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学文教キャンパス
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Rh(111)基板上への窒化物成長初期過程の解析2010

    • Author(s)
      岡野雄幸, 井上茂, 上野耕平, 小林篤, 太田実雄, 尾嶋正治, 藤岡洋
    • Organizer
      秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学文教キャンパス
    • Year and Date
      2010-09-16
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] ZnO基板上半極性面AlGaN薄膜の偏光特性評価2010

    • Author(s)
      上野耕平, 小林篤, 太田実雄, 藤岡洋
    • Organizer
      秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学文教キャンパス
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] ZnO基板上高In組成m面InGaN薄膜の構造特牲及び偏光特性2010

    • Author(s)
      玉木啓晶, 小林篤, 太田実雄, 尾嶋正治, 藤岡洋
    • Organizer
      秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学文教キャンパス
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] ZnO基板上高In組成m面InGaN薄膜の偏光特性2010

    • Author(s)
      玉木啓晶、小林篤、太田実雄、尾嶋正治、藤岡洋
    • Organizer
      応用物理学会結晶工学分科会主催2010年・年末講演会「エレクトロニクスの将来ビジョン~発展史マップとアカデミックロードマップ~&若手ポスター発表会」
    • Place of Presentation
      学習院大学
    • Year and Date
      2010-12-17
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] ZnO基板上半極性面AlGaN/AlNヘテロ構造の作製と光学特性評価2010

    • Author(s)
      上野耕平、小林篤、太田実雄、藤岡洋
    • Organizer
      応用物理学会結晶工学分科会主催2010年・年末講演会「エレクトロニクスの将来ビジョン~発展史マップとアカデミックロードマップ~&若手ポスター発表会」
    • Place of Presentation
      学習院大学
    • Year and Date
      2010-12-17
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] 放射光光電子分光による極性面・無極性面GaN/ZnOヘテロ界面の解析2010

    • Author(s)
      劉江偉, 小林篤, 豊田智史, 菊池亮, 太田実雄, 藤岡洋, 組頭広志, 尾嶋正治
    • Organizer
      秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学文教キャンパス
    • Year and Date
      2010-09-16
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] サハラソーラーブリーダー計画2010

    • Author(s)
      藤岡洋
    • Organizer
      JST-SNTTワークショップ「開発途上国の持続可能な資源開発」
    • Place of Presentation
      JSTホール(東京)
    • Year and Date
      2010-10-06
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] 半極性面AlV/InNヘテロ構造の作製と評価2010

    • Author(s)
      小林篤, 藤井智明, 太田実雄, 藤岡洋, 尾嶋正治
    • Organizer
      第29回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ修善寺
    • Year and Date
      2010-07-14
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] ZnO基板から異方的歪みを受けたm面InGaN薄膜の偏光特性2010

    • Author(s)
      玉木啓晶, 小林篤, 太田実雄, 尾嶋正治, 藤岡洋
    • Organizer
      第29回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ修善寺
    • Year and Date
      2010-07-14
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] ZnO基板上への高In組成m面InAlN薄膜の成長2010

    • Author(s)
      梶間智文, 上野耕平, 小林篤, 太田実雄, 藤岡洋, 尾嶋正治
    • Organizer
      秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学文教キャンパス
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] YSZ基板上に成長したInNの極性制御と成長モード2010

    • Author(s)
      小林篤, 大久保佳奈, 太田実雄, 藤岡洋, 尾嶋正治
    • Organizer
      秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学文教キャンパス
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] BNTCA-BPTAポリマー焼結グラファイトシート上へのGaN薄膜成長2010

    • Author(s)
      金子俊郎, 太田実雄, 藤岡洋, 山下順也, 羽鳥浩章, 児玉昌也, 平崎哲郎, 植仁志
    • Organizer
      第2回窒化物半導体結晶成長講演会
    • Place of Presentation
      三重大学
    • Year and Date
      2010-05-15
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] パルススパッタ法による太陽電池用InGaN薄膜の作製2010

    • Author(s)
      加藤雅樹, 田村和也, 井上茂, 太田実雄, 藤岡洋
    • Organizer
      第2回窒化物半導体結晶成長講演会
    • Place of Presentation
      三重大学
    • Year and Date
      2010-05-15
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] ZnO基板から異方的歪みを受けたm面InGaN薄膜の偏光特性2010

    • Author(s)
      玉木啓晶, 小林篤, 太田実雄, 藤岡洋, 尾嶋正治
    • Organizer
      第2回窒化物半導体結晶成長講演会
    • Place of Presentation
      三重大学
    • Year and Date
      2010-05-15
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] FUTURE LARGE AREA NITRIDE DEVICES FABRICATED WITH LOW TEMPERATURE PXD PROCESS2010

    • Author(s)
      Hiroshi Fujioka
    • Organizer
      The International Workshop on Nitride semiconductors 2010 (IWN2010)
    • Place of Presentation
      Tampa Florida, USA
    • Year and Date
      2010-09-21
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Improvement in crystalline quality of semipolar AlN (1-102) films by using ZnO substrates with self-organized nanostripes2010

    • Author(s)
      Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
    • Organizer
      The 3rd International Symposium on Growth of III-Nitrides (ISGN-3)
    • Place of Presentation
      Montpellier, France
    • Year and Date
      2010-07-06
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Possibility of Large Area III-V Semiconductor Devices2010

    • Author(s)
      Hiroshi Fujioka
    • Organizer
      Collaborative Conference on Crystal Growth (3CG)
    • Place of Presentation
      Miami, Florida, US
    • Year and Date
      2010-11-29
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Development of Future large area Group III nitride devices2010

    • Author(s)
      Hiroshi Fujioka
    • Organizer
      2010 International Symposium on Crystal Growth
    • Place of Presentation
      seoul, Korea
    • Year and Date
      2010-11-08
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Feasibility study on Future large area nitride devices2010

    • Author(s)
      Hiroshi Fujioka
    • Organizer
      The European Workshop on Compound Semiconductor Devices and Integrated Circuits(Invited)
    • Place of Presentation
      Germany
    • Year and Date
      2010-05-17
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Future large area nitride devices fabricated with low temperature PXD process2010

    • Author(s)
      Hiroshi Fujioka
    • Organizer
      The International Workshop on Nitride semiconductors 2010(Invited)
    • Place of Presentation
      U.S.A
    • Year and Date
      2010-09-21
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Growth Orientation Control of InN by Pulsed Excitation Deposition2010

    • Author(s)
      Hiroshi Fujioka
    • Organizer
      Electronic Materials Conference(Invited)
    • Place of Presentation
      U.S.A
    • Year and Date
      2010-06-25
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] 窒化物半導体太陽電池の将来2010

    • Author(s)
      藤岡洋
    • Organizer
      GaN系プラネットコンシャスデバイス・材料の現状
    • Place of Presentation
      東北大学多元物質科学研究所
    • Year and Date
      2010-11-05
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] PSD法による高品質窒化物成長の検討2010

    • Author(s)
      藤岡洋
    • Organizer
      第3回窒化物半導体の高品質結晶成長とその素子応用
    • Place of Presentation
      東北大学金属材料研究所
    • Year and Date
      2010-10-25
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] PSD法を用いた大面積窒化物素子作製の可能性2009

    • Author(s)
      藤岡洋
    • Organizer
      第2回窒化物半導体ワークショップ
    • Place of Presentation
      東北大学
    • Year and Date
      2009-12-22
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Fabrication of flexible devices with low temperature epitaxial growth technique2009

    • Author(s)
      藤岡洋
    • Organizer
      MNC2009
    • Place of Presentation
      Sapporo, Hokkaidou Japan
    • Year and Date
      2009-11-16
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Feasibility study on large area nitride devices2009

    • Author(s)
      藤岡洋
    • Organizer
      Satellite Workshop on Nitride Semiconductors
    • Place of Presentation
      Seoul, Korea
    • Year and Date
      2009-10-26
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Room Temperature Epitaxial Growth of Nitride Semiconductors2009

    • Author(s)
      藤岡洋
    • Organizer
      NMDT-NGPC
    • Place of Presentation
      Algiers, Algeria
    • Year and Date
      2009-05-20
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] 大面積化合物半導体エレクトロニクスの可能性2009

    • Author(s)
      藤岡洋
    • Organizer
      第13回名古屋大学VBLシンポジウム
    • Place of Presentation
      名古屋大学
    • Year and Date
      2009-11-10
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] 大面積単結晶エレクトロニクスの展望2009

    • Author(s)
      藤岡洋
    • Organizer
      ポストシリコン物質・デバイス創製基盤技術アライアンス「新機能ナノエレクトロニクス」グループ分科会
    • Place of Presentation
      北海道大学
    • Year and Date
      2009-10-09
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Room temperature epitaxial growth of InGaN and its Application to Solar Cells2009

    • Author(s)
      藤岡洋
    • Organizer
      ICAM2009
    • Place of Presentation
      Rio de Janeiro, Brazil
    • Year and Date
      2009-09-23
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Development of room temperature epitaxial growth technique for nitride optical devices2009

    • Author(s)
      藤岡洋
    • Organizer
      5th International Symposium on Laser, Scintillator and Non Linear Optical Materials
    • Place of Presentation
      Pisa, Italy
    • Year and Date
      2009-09-05
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Room temperature epitaxial growth of group III nitride semiconductors2009

    • Author(s)
      藤岡洋
    • Organizer
      ROMANIAN CONFERENCE ON ADVANCED MATERIALS
    • Place of Presentation
      Bucharest, Romania
    • Year and Date
      2009-08-28
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Room temperature growth of group III nitride crystals2009

    • Author(s)
      藤岡洋
    • Organizer
      2009 Japan-China Crystal Grows and Crystal Technology Symposium
    • Place of Presentation
      Suita, Osaka Japan
    • Year and Date
      2009-07-23
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] High Quality Group III Nitrides Grown on ZnO Substrates2009

    • Author(s)
      H. Fujioka
    • Organizer
      OPT02009
    • Place of Presentation
      San Jose, USA
    • Year and Date
      2009-01-25
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Low Temperature Epitaxial Growth of Group III Nitrides by Pulsed Excitation Deposition2009

    • Author(s)
      H. Fujioka
    • Organizer
      OPT02009
    • Place of Presentation
      San Jose, USA
    • Year and Date
      2009-01-26
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Fabrication of semiconductor nanostructures by room temperature epitaxial growth techniques2008

    • Author(s)
      H. Fujioka
    • Organizer
      Thin Films 2008
    • Place of Presentation
      Singapore, Singapore
    • Year and Date
      2008-09-25
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Low Temperature Epitaxial Growth of Semiconductors on Metal Substrates2008

    • Author(s)
      H. Fujioka
    • Organizer
      SSDM2008
    • Place of Presentation
      Tsukuba Japan
    • Year and Date
      2008-09-25
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Group III nitride Nanostructures Prepared by Room Temperature Epitaxial Growth2008

    • Author(s)
      H. Fujioka
    • Organizer
      CGCT4
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      2008-05-24
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Growth of cubic InN with high phase purity by pulsed laser deposition2008

    • Author(s)
      A. Kobayashi, R. Ohba, J. Ohta, H. Fujioka, and M. Oshima
    • Organizer
      2nd International symposium on growth of nitrides
    • Place of Presentation
      Shuzenji, Japan
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Low temperature epitaxial growth of high quality GaN2007

    • Author(s)
      H. Fujioka
    • Organizer
      1st International Conference on White LEDs and Solid State Lighting
    • Place of Presentation
      Japan
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] パルス励起堆積(PXD)法による窒化物室温エピタキシャル成長2007

    • Author(s)
      藤岡洋
    • Organizer
      応用物理学会応用電子物性分科会研究例会
    • Place of Presentation
      東京
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Room Temperature Epitaxial Growth of Group III Nitrides by Pulsed Excitation Deposition2007

    • Author(s)
      H. Fujioka
    • Organizer
      1st China-Japan Crystal Growth & Technology Symposium
    • Place of Presentation
      China
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Room Temperature Epitaixial Growth of Group III Nitrides2007

    • Author(s)
      H. Fujioka
    • Organizer
      The Second Polish-Japanese German Crystal Growth Meeting
    • Place of Presentation
      USA
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Growth of High Quality Non-polar and Semi-polar GaN on Nearly Lattice Matched ZnO Substrates2007

    • Author(s)
      H. Fujioka
    • Organizer
      14th Semiconducting and Insulating Materials Conference
    • Place of Presentation
      USA
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Room Temperature Epitaixial Growth of Group III Nitrides2007

    • Author(s)
      H. Fujioka
    • Organizer
      15th International conference on crystal growth
    • Place of Presentation
      USA
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] パルス励起堆積(PXD)法によるInN系薄膜の低温成長2007

    • Author(s)
      藤岡洋
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      北海道
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] 窒化物半導体結晶の室温成長技術2007

    • Author(s)
      藤岡 洋
    • Organizer
      プレISGN-2シンポジウム「未来を切り開く窒化物半導体結晶」
    • Place of Presentation
      東京
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Room Temperature Epitaixial Growth of Group III Nitrides2007

    • Author(s)
      H. Fujioka, S. Inoue, T. Nakano, and J. Ohta
    • Organizer
      15th International conference on crystal growth
    • Place of Presentation
      Salt lake city, USA
    • Data Source
      KAKENHI-PLANNED-18069003
  • [Presentation] Nitride Materials and Devices Prepared by Pulsed Sputtering

    • Author(s)
      H. Fujioka
    • Organizer
      International Conference on Metamaterials and Nanophysics
    • Place of Presentation
      Hotel Melia Varadero, Cuba
    • Year and Date
      2014-04-22 – 2014-05-01
    • Invited
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] Pulsed Sputtering Technique for Fabrication of Future Nitride Devices

    • Author(s)
      H. Fujioka
    • Organizer
      E-MRS 2014 SPRING MEETING, SYMPOSIUM K
    • Place of Presentation
      Congress Center, Lille, France
    • Year and Date
      2014-05-26 – 2014-05-30
    • Invited
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] Fabrication of Nitride Devices by Pulsed Sputtering Deposition

    • Author(s)
      H. Fujioka
    • Organizer
      CIMTEC2014
    • Place of Presentation
      Montecatini Terme, Italy
    • Year and Date
      2014-06-15 – 2014-06-19
    • Invited
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] PSD 法により作製した高In 組成InGaN 薄膜の光学定数評価

    • Author(s)
      野口英成, 上野耕平, 太田実雄, 小林篤, 藤岡洋
    • Organizer
      第6回 窒化物半導体結晶成長講演会
    • Place of Presentation
      名城大学
    • Year and Date
      2014-07-25 – 2014-07-26
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] Preparation of Nitride Devices by Plasma Processing

    • Author(s)
      H. Fujioka
    • Organizer
      ISPlasma 2014
    • Place of Presentation
      名古屋大学
    • Year and Date
      2014-03-02 – 2014-03-06
    • Invited
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] Characteristics of GaN Films Prepared by PXD and Their Device Applications

    • Author(s)
      H. Fujioka
    • Organizer
      ICMAT2013
    • Place of Presentation
      Suntec International Convention & Exhibition Centre, Singapore
    • Year and Date
      2013-06-30 – 2013-07-05
    • Invited
    • Data Source
      KAKENHI-PROJECT-24245040
  • [Presentation] PSD法により成長したInGaN薄膜の光学特性評価

    • Author(s)
      上野耕平,野口英成,太田実雄,藤岡 洋,尾嶋正治
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学
    • Year and Date
      2014-03-17 – 2014-03-20
    • Data Source
      KAKENHI-PROJECT-24245040
  • 1.  OHTA Jitsuo (60392924)
    # of Collaborated Projects : 2results
    # of Collaborated Products : 54results
  • 2.  OSHIMA Masaharu (30280928)
    # of Collaborated Projects : 2results
    # of Collaborated Products : 0results
  • 3.  ONO Kanta (70282572)
    # of Collaborated Projects : 2results
    # of Collaborated Products : 0results
  • 4.  大渕 博宣 (40312996)
    # of Collaborated Projects : 1results
    # of Collaborated Products : 0results
  • 5.  酒井 朗 (20314031)
    # of Collaborated Projects : 1results
    # of Collaborated Products : 0results
  • 6.  川上 養一 (30214604)
    # of Collaborated Projects : 1results
    # of Collaborated Products : 0results
  • 7.  小出 康夫 (70195650)
    # of Collaborated Projects : 1results
    # of Collaborated Products : 0results
  • 8.  三宅 秀人 (70209881)
    # of Collaborated Projects : 1results
    # of Collaborated Products : 0results
  • 9.  橋詰 保 (80149898)
    # of Collaborated Projects : 1results
    # of Collaborated Products : 0results
  • 10.  徳本 有紀 (20546866)
    # of Collaborated Projects : 1results
    # of Collaborated Products : 1results
  • 11.  上山 智 (10340291)
    # of Collaborated Projects : 1results
    # of Collaborated Products : 0results

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