FUJIOKA Hiroshi 藤岡洋

Researcher Number	50282570
Other IDs
External Links
Affiliation *help	2016 – 2017 : 東京大学, 生産技術研究所, 教授 2012 – 2014 : 東京大学, 生産技術研究所, 教授 2004 – 2010 : 東京大学, 生産技術研究所, 教授 2005 – 2009 : 東大, 生産技術研究所, 教授 2002 – 2004 : 東大, 工学(系)研究科(研究院), 助教授 1999 – 2003 : 東京大学, 大学院・工学系研究科, 助教授 1998 : 東京大学, 大学院・工学系研究科, 講師
Review Section/Research Field	Principal Investigator Science and Engineering / 無機工業化学 / Inorganic industrial materials / Functional materials/Devices Except Principal Investigator Electronic materials/Electric materials / Applied materials science/Crystal engineering
Keywords	Principal Investigator GaN / 電子・電気材料 / 先端機能デバイス / 格子欠陥 / 結晶工学 / 半導体物性 / 特異構造 / MBE / 窒化ガリウム / エピタキシャル成長 … More Except Principal Investigator 放射光 / photoelectron spectroscopy / MBE / 光電子分光 / Si / MnAs / MOSトランジスタ / 電気測定 / gate insulators / 磁性ドット / シリコン / non-destructive analysis / コンビナトリアル解析 / ゲート酸化膜 / ULSI / 光電子顕微鏡 / 磁性ナノ構造 / strongly correlated oxides / 量子ナノ構造 / electrical measurements / Synchrotron radiation / photoelectron emission microscopy / スピン制御 / FLAPW法 / 密度内関数法 / MBE成長 / シンクロトロン放射光 / magnetic nanostructures / 強相関酸化物 / 非破壊分析 / 酸化物磁性体 / oxinitride / combinatorial analysis / 自己組織化 / 酸化膜 / 磁性超微粒子 / synchrotron radiation / ゲート絶縁膜 / 酸窒化膜 / oxide Less

Materials Science and Advanced Elecronics created by singularityArea Organizer
- Area Organizer
  
  藤岡洋
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
総括班Principal InvestigatorOngoing
- Principal Investigator
  
  藤岡洋
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
非平衡状態の時間ドメイン制御による特異構造の創製Principal InvestigatorOngoing
- Principal Investigator
  
  藤岡洋
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
国際活動支援班Principal InvestigatorOngoing
- Principal Investigator
  
  藤岡洋
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
Flexible electronics on mica substratesPrincipal Investigator
- Principal Investigator
  
  FUJIOKA Hiroshi
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Inorganic industrial materials
- Research Institution
  The University of Tokyo
Low temperature growth of InN films by pulsed excitation depositionPrincipal Investigator
- Principal Investigator
  
  FUJIOKA Hiroshi
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
Development of devices with single crystalline Si grown on steelPrincipal Investigator
- Principal Investigator
  
  FUJIKA Hiroshi
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Functional materials/Devices
- Research Institution
  The University of Tokyo
Research on GaN Light Emitting Devices on Quasi-Single Crystal Metal SubstratesPrincipal Investigator
- Principal Investigator
  
  FUJIOKA Hiroshi
- Project Period (FY)
  2002 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  無機工業化学
- Research Institution
  The University of Tokyo
Photon and spin control devices using semiconductor/magnetic quanturn nanostructures
- Principal Investigator
  
  OSHIMA Masaharu
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo
Development of ultra-thin insulator films for next-generation super-high density devices
- Principal Investigator
  
  OSHIMA Masaharu
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  School of Engineering, University of Tokyo

All 2017 2016 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 Other

All Journal Article Presentation

[Journal Article] Low-temperature pulsed sputtering growth of InGaN multiple quantum wells for photovoltaic devices2017
- Author(s)
  Yasuaki Arakawa, Kohei Ueno, Hidenari Noguchi, Jitsuo Ohta, and Hiroshi Fujioka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume : 56 Pages : 031002-031002
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PLANNED-16H06414
[Journal Article] N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering2017
- Author(s)
  Kohei Ueno, Eiji Kishikawa, Jitsuo Ohta, and Hiroshi Fujioka
- Journal Title
  
  APL Materials
  
  Volume : 5 Pages : 026102-026102
- Peer Reviewed / Open Access / Acknowledgement Compliant
- Data Source
  KAKENHI-PLANNED-16H06414
[Journal Article] Electrical properties of Si-doped GaN prepared using pulsed sputtering2017
- Author(s)
  Yasuaki Arakawa, Kohei Ueno, Hideyuki Imabeppu, Atsushi Kobayashi, Jitsuo Ohta, and Hiroshi Fujioka
- Journal Title
  
  Applied Physics Letters
  
  Volume : 110 Pages : 042103-042103
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PLANNED-16H06414
[Journal Article] Dramatic reduction in process temperature of InGaN based light emitting diodes by pulsed sputtering growth technique2014
- Author(s)
  E. Nakamura, K. Ueno, J. Ohta, H. Fujioka and M. Oshima
- Journal Title
  
  Appl. Phys. Lett. 104, 051121 (2014).
  
  Volume : 104 Pages : 051121-051121
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24245040, KAKENHI-PROJECT-11J09592
[Journal Article] Structural properties of m-plane InAlN films grown on ZnO substrates with room-temperature GaN buffer layers2013
- Author(s)
  T. Kajima, A. Kobayashi, K. Uen, J. Ohta, H. Fujioka, and M. Oshima
- Journal Title
  
  Applied Physics Express
  
  Volume : 6-021003 Pages : 1-3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24245040
[Journal Article] Theoretical Investigation of the Polarity Determination for c-plane InN Grown on Yttria-Stabilized Zirconia (111) Substrates with Yttrium Surface Segregation2013
- Author(s)
  Y. Guo, S. Inoue, A. Kobayashi, J. Ohta, and H. Fujioka
- Journal Title
  
  Applied Physics Express
  
  Volume : 6-021002 Pages : 1-3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24245040
[Journal Article] Electron mobility of ultrathin InN grown on yttria-stabilized zirconia with two-dimensionally grown initial layers2013
- Author(s)
  K. Okubo, A. Kobayashi, J. Ohta, M. Oshima, and H. Fujioka
- Journal Title
  
  Applied Physics Letters
  
  Volume : 102-022103 Pages : 1-3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24245040
[Journal Article] Band Configuration of SiO2/m-Plane ZnO Heterointerface Correlated with Electrical Properties of Al/SiO2/ZnO Structures2013
- Author(s)
  J. Liu, A. Kobayashi, K. Ueno, J. Ohta, H. Fujioka, and M. Oshima
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume : 52-011101 Pages : 1-4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24245040
[Journal Article] Theoretical study on initial stage of InN growth on cubic zirconia (111) substrates2013
- Author(s)
  Y. Guo, S. Inoue, A. Kobayashi, J. Ohta, and H. Fujioka
- Journal Title
  
  Physica Status Solidi RRL
  
  Volume : 7 Pages : 207-210
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24245040
[Journal Article] Polarity control and growth mode of InN on yttria-stabilized zirconia (111) surfaces2012
- Author(s)
  A.Kobayashi, K.Ohkubo, J. Ohta, M. Oshima, and H. Fujioka
- Journal Title
  
  Physica Status Solidi A
  
  Volume : 209 Pages : 2251-2254
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24245040
[Journal Article] Characteristics of AlN Films Grown on Thermally-Nitrided Sapphire Substrates2011
- Author(s)
  K.Ueno, J.Ohta, H.Fujioka, H.Fukuyama
- Journal Title
  
  Applied Physics Express
  
  Volume : 4
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Coherent growth of r-plane GaN films on ZnO substrates at room temperature2011
- Author(s)
  A.Kobayashi, K.Ueno, J.Ohta, H.Fujioka
- Journal Title
  
  Physica Status Solidi A
  
  Pages : 1-4
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Fabrication of densely packed array of GaN nanostructures on nano-imprinted substrates.2011
- Author(s)
  F.Shih, A.Kobayashi, S.inoue, J.Ohta, H.Fujioka
- Journal Title
  
  Journal of Crystal Growth
  
  Volume : 319 Pages : 102-105
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Growth Orientation Control of Semipolar InN Films Using Yttria-Stabilized Zirconia Substrates2010
- Author(s)
  T.Fujii, K.Shimomoto, J.Ohta, M.Oshima, H.Fujioka
- Journal Title
  
  Jpn.J.Appl.Phys. 49
  
  Pages : 80204-80204
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Characteristics of m-plane InN films grown on ZnO substrates at room temperature by pulsed laser deposition2010
- Author(s)
  K.Shimomoto, A.Kobayashi, K.Mitamura, K.Ueno, J.Ohta, M.Oshima, H.Fujioka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume : 49
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Growth orientation control of semipolar InN films using yttria-stabilized zirconia substrates2010
- Author(s)
  T.Fujii, K.Shimomoto, J.Ohta, M.Oshima, H.Fujioka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume : 49
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Band Offsets of Polar and Nonpolar GaN/ZnO Heterostructures Determined by Synchrotron Radiation Photoemission Spectroscopy2010
- Author(s)
  J.W.Liu, A.Kobayashi, S.Toyoda, H.Kamada, A.Kikuchi, J.Ohta, H.Fujioka.
- Journal Title
  
  Physica Status Solidi B
  
  Pages : 1-4
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Improvements in optical properties of semipolar r-plane GaN films grown using atomically flat ZnO substrates and room temperature epitaxial buffer layers2010
- Author(s)
  A.Kobayashi, S.Kawano, K.Ueno, J.Ohta, H.Fujioka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume : 49
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Structural Characteristics of GaN/InN Heterointerfaces Fabricated at Low Temperatures by Pulsed Laser Deposition2010
- Author(s)
  T.Fujii, A.Kobayashi, K.Shimomoto, J.Ohta, M.Oshima, H.Fujioka
- Journal Title
  
  Appl.Phys.Exp. 3
  
  Pages : 21003-21003
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Structural and optical properties of nonpolar AlN (11_20) films grown on ZnO (11_20) substrates with a room-temperature GaN buffer layer2010
- Author(s)
  K.Ueno, A.Kobayashi, J.Ohta, H.Fujioka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume : 49
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Optical polarization characteristics of m-plane InGaN films coherently grown on ZnO substrates2010
- Author(s)
  A.Kobayashi, K.Shimomoto, J.Ohta, H.Fujioka, M.Oshima
- Journal Title
  
  Physica Status Solidi (RRL)
  
  Volume : 4 Pages : 188-190
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Characteristics of thick m-plane InGaN films grown on ZnO substrates using room temperature epitaxial buffer layers2010
- Author(s)
  K.Shimomoto, A.Kobayashi, K.Ueno, J.Ohta, M.Oshima, H.Fujioka
- Journal Title
  
  Applied Physics Express
  
  Volume : 3
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Structural properties of semipolar AlxGa1-xN (1_103) films grown on ZnO substrates using room temperature epitaxial buffer layers2010
- Author(s)
  K.Ueno, A.Kobayashi, J.Ohta, H.Fujioka
- Journal Title
  
  Physica Status Solidi A
  
  Volume : 207 Pages : 2149-2152
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Improvement in the crystalline quality of semipolar AlN (1_102) films using ZnO substrates with self-organized nanostripes2010
- Author(s)
  K.Ueno, A.Kobayashi, J.Ohta, H.Fujioka
- Journal Title
  
  Applied Physics Express
  
  Volume : 3
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Investigation on the conversion efficiency of InGaN solar cells fabricated on GaN and ZnO substrates2010
- Author(s)
  S.Inoue, M.Katoh, A.Kobayashi, J.Ohta, H.Fujioka
- Journal Title
  
  Physica Status Solidi RRL
  
  Volume : 4 Pages : 88-90
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Room-temperature epitaxial growth of high quality m-plane InAlN films on nearly lattice-matched ZnO substrates2010
- Author(s)
  T.Kajima, A.Kobayashi, K.Ueno, K.Shimomoto, T.Fujii, J.Ohta, H.Fujioka, M.Oshima
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume : 49
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Structural characteristics of semipolar InN (11 21) films grown on yttria stabilized zirconia substrates2010
- Author(s)
  T.Fujii, A.Kobayashi, J.Ohta, M.Oshima, H.Fujioka
- Journal Title
  
  Physica Status Solidi A
  
  Volume : 207 Pages : 2269-2271
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Characteristics of m-Plane InN Films Grown on ZnO Substrates at Room Temperature by Pulsed Laser Deposition2010
- Author(s)
  K.Shimomoto, A.Kobayashi, K.Mitamura, K.Ueno, J.Ohta, M.Oshima, H.Fujioka
- Journal Title
  
  Jpn.J.Appl.Phys. 49
  
  Pages : 80202-80202
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Optical polarization characteristics of m-plane InGaN films coherently grown on ZnO substrates2010
- Author(s)
  A.Kobayashi, K.Shimomoto, J.Ohta, H.Fujioka, M.Oshima
- Journal Title
  
  Phys.Status Solidi (RRL) 4
  
  Pages : 188-188
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Characteristics of thick m-plane InGaN films grown on ZnO substrates using room temperature epitaxial buffer layers2010
- Author(s)
  K.Shimomoto, A.Kobayashi, K.Ueno, J.Ohta, M.Oshima, H.Fujioka
- Journal Title
  
  Appl.Phys.Exp. 3
  
  Pages : 61001-61001
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Fabrication and Characterization of AlN/InN Heterostructures2009
- Author(s)
  T.Fujii, K.Shimomoto, R.Ohba, Y.Toyoshima, K.Horiba, J.Ohta, H.Fujioka, M.Oshima, S.Ueda, H.Yoshikawa, K.Kobayashi
- Journal Title
  
  Appl Phys.Exp. 2
  
  Pages : 11002-11002
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Epitaxial growth of high purity cubic InN films on MgO substrates using HfN buffer layers by pulsed laser deposition2009
- Author(s)
  R.Ohba, J.Ohta, K.Shimomoto, T.Fujii, K.Okamoto, A.Aoyama, T.Nakano, A.Kobayashi, H.Fujioka, M.Oshima
- Journal Title
  
  J.Solid State Chemistry 182
  
  Pages : 2887-2887
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Room-Temperature Epitaxial Growth of High Quality AlN on SiC by Pulsed Sputtering Deposition2009
- Author(s)
  K. Sato, J. Ohta, S. Inoue, A. Kobayashi, and H. Fujioka
- Journal Title
  
  Appl. Phys. Exp. 2
  
  Pages : 11003-11003
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Low-temperature growth of high quality AlN films on carbon face 6H-SiC2008
- Author(s)
  M.-H.Kim, J.Ohta, A.Kobayashi, H.Fujioka, M.Oshima
- Journal Title
  
  Physica Status Solidi - Rapid Research Letters 2
  
  Pages : 13-13
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Low temperature Epitaxial Growth of GaN films on LiGaO2 substrates2007
- Author(s)
  K.Sakurada, A.Kobayashi, Y.Kawaguchi, J.Ohta, H.Fujioka
- Journal Title
  
  Applied Physics Letters (accepted for press)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Room temperature epitaxial growth of m-plane GaN on lattice-matched ZnO substrates2007
- Author(s)
  A.Kobayashi, S.Kawano, Y.Kawaguchi, J.Ohta, H.Fujioka
- Journal Title
  
  Applied Physics Letters 90
  
  Pages : 41908-41908
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Growth temperature dependence of structural properties for AlN films on ZnO (000-1) substrates2007
- Author(s)
  K.Ueno, A.Kobayashi, J.Ohta, H.Fujioka
- Journal Title
  
  Applied Physics Letters 90
  
  Pages : 141908-141908
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Epitaxial growth mechanisms of AlN on SiC substrates at room temperature2007
- Author(s)
  M.H.Kim, J.Ohta, A.Kobayashi, H.Fujioka, M.Oshima
- Journal Title
  
  Appl.Phys.Lett. 91
  
  Pages : 151903-151903
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Room temperature epitaxial growth of m-plane GaN on lattice-matched ZnO substrates2007
- Author(s)
  A.Kobayashi, S.Kawano, Y.Kawaguchi, J.Ohta, H.Fujioka
- Journal Title
  
  Applied Physics Letters 90
  
  Pages : 41908-41908
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Growth temperature dependence of structural properties for A1N films on ZnO (000-1) substrates2007
- Author(s)
  K.Ueno, A.Kobayashi, J.Ohta, H.Fujioka
- Journal Title
  
  Applied Physics Letters 90
  
  Pages : 141908-141908
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Room temperature epitaxial growth of m-plane GaN on lattice-matched ZnO substrates2007
- Author(s)
  A. Kobayashi, S. Kawano, Y. Kawaguchi, J. Ohta, and H. Fujioka
- Journal Title
  
  Appl. Phys. Lett. 90
  
  Pages : 41908-41908
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Growth of InN films on spinel substrates by pulsed laser deposition2007
- Author(s)
  K. Mitamura, J. Ohta, H. Fujioka, and M. Oshima
- Journal Title
  
  physica status solidi (rapid research letters) 5
  
  Pages : 211-211
- Data Source
  KAKENHI-PLANNED-18069003
[Journal Article] Low temperature Epitxial Growth of GaN films on LiGa02 substrates2007
- Author(s)
  K.Sakurada, A.Kobayashi, Y.Kawaguchi, J.Ohta, H.Fujioka
- Journal Title
  
  Applied Physics Letters (accepted for press)
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Epitaxial growth of GaN on copper substrates2006
- Author(s)
  S.Inoue, K.Okamoto, N.Matsuki, T.W.Kim, H.Fujioka
- Journal Title
  
  Applied Physics Letters 88
  
  Pages : 261910-261910
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] P-type activation of AlGaN by hydrogen desorption using catalytic Ni films2006
- Author(s)
  T.Naono, H.Fujioka, J.Okabayashi, M.Oshima, H.Miki
- Journal Title
  
  Applied Physics Letters 88
  
  Pages : 152114-152114
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Characteristics of single crystalline AlN films grown on Ru(0001) substrates2006
- Author(s)
  S.Inoue, K.Okamoto, T.Nakano, H.Fujioka
- Journal Title
  
  Journal of Crystal Growth 297
  
  Pages : 317-317
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Epitaxial growth of AlN on Cu(111) substrates using pulsed laser deposition2006
- Author(s)
  S.Inoue, K.Okamoto, N.Matsuki, T.-W.Kim, H.Fujioka
- Journal Title
  
  Journal of Crystal Growth 289
  
  Pages : 574-574
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Characteristics of single crystalline A1N films grown on Ru(0001) substrates2006
- Author(s)
  S.Inoue, K.Okamoto, T.Nakano, H.Fujioka
- Journal Title
  
  Journal of Crystal Growth 297
  
  Pages : 317-317
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Epitaxial growth of A1N on Cu(111) substrates using pulsed laser deposition2006
- Author(s)
  S.Inoue, K.Okamoto, N.Matsuki, T.-W.Kim, H.Fujioka
- Journal Title
  
  Journal of Crystal Growth 289
  
  Pages : 574-574
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Epitaxial growth of GaN on copper substrates2006
- Author(s)
  S.Inoue, K.Okamoto, N.Matsuki, T.W.Kim, H.Fujioka
- Journal Title
  
  Applied Physics Letters 88
  
  Pages : 261910-261910
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] P-type activation of A1GaN by hydrogen desorption using catalytic Ni films2006
- Author(s)
  T.Naono, H.Fujioka, J.Okabayashi, M.Oshima, H.Miki
- Journal Title
  
  Applied Physics Letters 88
  
  Pages : 152114-152114
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] GaN Heteroepitaxial Growth on LiTaO3(0001) Step Substrates by Pulsed Laser Deposition2005
- Author(s)
  Y.Tsuchiya, A.Kobayashi, J.Ohta, H.Fujioka, M.Oshima
- Journal Title
  
  Jap. J. of Appl. Phys. 44
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Epitaxial growth of InN on nearly lattice-matched (Mn,Zn)Fe2O42005
- Author(s)
  J.Ohta, K.Mitamura, A.Kobayashi, T.Honke, H.Fujioka, M.Oshima
- Journal Title
  
  Solid State Communications 137
  
  Pages : 208-208
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Characteristics of single-crystal AIN films grown on ferromagnetic metal substrates2005
- Author(s)
  K.Okamoto, S.Inoue, N.Matsuki, T.-W.Kim, H.Fujioka, M.Oshima
- Journal Title
  
  physica status solidi (a) 202
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Photoemission study on interfacial reaction of Ti/n-type GaN2005
- Author(s)
  T.Naono, J.Okabayashi, S.Toyoda, H.Fujioka, M.Oshima, H.Hamamatsu
- Journal Title
  
  Applied Scurface Science 244
  
  Pages : 277-277
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Room-temperature epitaxial growth of GaN on lattice-matched ZrB_2 substrates by pulsed-laser deposition2005
- Author(s)
  Y.Kawaguchi, J.Ohta, A.Kobayashi, H.Fujioka
- Journal Title
  
  Applied Phyics Letters 87
  
  Pages : 221907-221907
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] GaN heteroepitaxial growth on LiNbO3(0001) step substrates with AlN buffer layers2005
- Author(s)
  Y.Tsuchiya, A.Kobayashi, J.Ohta, H.Fujioka, M.Oshima
- Journal Title
  
  physica status solidi (a) 202
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Heteroepitaxial growth of gallium nitride on muscovite mica plates by pulsed laser deposition2005
- Author(s)
  N.Matsuki, T.-W.Kim, J.Ohta, H.Fujioka
- Journal Title
  
  Solid State Communications 136
  
  Pages : 338-338
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] GaN heteroepitaxial growth on LiNbO3(0001) step substrates with AlN buffer layers2005
- Author(s)
  Y.Tsuchiya, A.Kobayashi, J.Ohta, H.Fujioka, M.Oshima
- Journal Title
  
  physica status solidi (a) 202
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Room-temperature epitaxial growth of GaN on lattice-matched ZrB_2 substrates by pulsed-laser deposition2005
- Author(s)
  Y.Kawaguchi, J.Ohta, A.Kobayashi, H.Fujioka
- Journal Title
  
  Applied Physics Letters 87
  
  Pages : 221907-221907
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] GaN Heteroepitaxial Growth on LiTaO3(0001) Step Substrates by Pulsed Laser Deposition2005
- Author(s)
  Y.Tsuchiya, A.Kobayashi, J.Ohta, H.Fujioka, M.Oshima
- Journal Title
  
  Jap.J.of Appl.Phys. 44
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Epitaxial growth of InN on nearly lattice-matched (Mn,Zn)Fe2O42005
- Author(s)
  J.Ohta, K.Mitamura, A.Kobayashi, T.Honke, H.Fujioka, M.Oshima
- Journal Title
  
  Solid State Communications 137
  
  Pages : 208-208
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Photoemission study on interfacial reaction of Ti/n-type GaN2005
- Author(s)
  T.Naono, J.Okabayashi, S.Toyoda, H.Fujioka, M.Oshima, H.Hamamatsu
- Journal Title
  
  Applied Surface Science 244
  
  Pages : 277-277
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Characteristics of single-crystal AlN films grown on ferromagnetic metal substrates2005
- Author(s)
  K.Okamoto, S.Inoue, N.Matsuki, T.-W.Kim, H.Fujioka, M.Oshima
- Journal Title
  
  physica status solidi (a) 202
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Heteroepitaxial growth of gallium nitride on muscovite mica plates by pulsed laser deposition2005
- Author(s)
  N.Matsuki, T.-W.Kim, J.Ohta, H.Fujioka
- Journal Title
  
  Solid State Communications 136
  
  Pages : 338-338
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Synchrotron-radiation deep level transient spectroscopy for defect characterization of semiconductors2004
- Author(s)
  H.Fujioka et al.
- Journal Title
  
  Applied Physics Letters 85
  
  Pages : 413-413
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Epitaxial Growth of InN on c-Plane Sapphire by PLD with RF Nitrogen Radical Source2004
- Author(s)
  J.Ohta, T.Honke, H.Fujioka, M.Oshima
- Journal Title
  
  Thin Solid Films 457
  
  Pages : 109-109
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Synchrotron-radiation deep level transient spectroscopy for defect characterization of semiconductors2004
- Author(s)
  H.Fujioka, T.Sekiya, Y.Kuzuoka, M.Oshima, H.Usuda, N.Hirashita, M.Niwa
- Journal Title
  
  Applied Physics Letters 85
  
  Pages : 413-413
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] A pulsed laser ablaion/plasma chemical vapor deposition tandem system for combinatorial device fabrication2004
- Author(s)
  N.Matsuki, Y.Abiko, M.Kobayashi, H.Fujioka, H.Koinuma
- Journal Title
  
  Applied Physics 79
  
  Pages : 1413-1413
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Experimental and theoretical investigation on structural properties of InN grown on sapphire2004
- Author(s)
  K.Fujiwara, A.Ishii, J.Ohta, H.Fujioka, M.Oshima
- Journal Title
  
  Thin Solid Films 464/465
  
  Pages : 112-112
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] InN epitaxial growths on Yttria stabilized Zirconia (111) step substrates2004
- Author(s)
  T.Honke, H.Fujioka, J.Ohta, M.Oshima
- Journal Title
  
  Journal of Vacuum Science and Technology A 22
  
  Pages : 2487-2487
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Structural characterizationof group III nitrides grown by PLD2004
- Author(s)
  H.Takahashi, J.Ohta, H.Fujioka, M.Oshima, M.Kimura
- Journal Title
  
  Thin Solid Films 457
  
  Pages : 114-114
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Synchrotron-radiation deep level transient spectroscopy for defect characterization of semiconductors2004
- Author(s)
  H.Fujioka, T.Sekiya, Y.Kuzuoka, M.Oshima, H.Usuda, N.Hirashima
- Journal Title
  
  Applied Physics Letters 85
  
  Pages : 413-413
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] A pulsed laser ablation / plasma chemical vapor deposition tandem system for combinatorial device fabrication2004
- Author(s)
  N.Matsuki, Y.Abiko, M.Kobayashi, H.Fujioka, H.Koinuma
- Journal Title
  
  Applied Physics 79
  
  Pages : 1413-1413
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Experimental and theoretical investigation on structural properties of InN grown on sapphire2004
- Author(s)
  K.Fujiwara, A.Ishii, J.Ohta, H.Fujioka, M.Ohsima
- Journal Title
  
  Thin Solid Films 464/465
  
  Pages : 112-112
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] InN epitaxial growths on Yttria stabilized Zirconia (111) step substrates2004
- Author(s)
  T.Honke, H.Fujioka, J.Ohta, M.Oshima
- Journal Title
  
  Journal of Vacuum Science and Technology A 22
  
  Pages : 2487-2487
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Structural characterizationof group III nitrides grown by PLD2004
- Author(s)
  H.Takahashi, J.Ohta, H.Fujioka, M.Oshima, M.Kimura
- Journal Title
  
  Thin Solid Films 457
  
  Pages : 114-114
- Data Source
  KAKENHI-PROJECT-16205022
[Journal Article] Epitaxial Growth of InN on c-Plane Sapphire by PLD with RF Nitrogen Radical Source2004
- Author(s)
  J.Ohta, T.Honke, H.Fujioka, M.Oshima
- Journal Title
  
  Thin Solid Films 457
  
  Pages : 109-109
- Data Source
  KAKENHI-PROJECT-16205022
[Presentation] Recent progress on growth of GaN by pulsed sputtering2017
- Author(s)
  Hiroshi Fujioka
- Organizer
  Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD 2017)
- Place of Presentation
  Safety Harbor, USA
- Int'l Joint Research / Invited
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] PSD法による高濃度高移動度n型GaNの開発2017
- Author(s)
  上野耕平、荒川靖章、小林篤、太田実雄、藤岡洋
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜、神奈川
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] 室温成長 InGaN をチャネル層とした薄膜トランジスタの作製2017
- Author(s)
  中村享平、小林篤、伊藤剛輝、ライ・ケーシン、森田眞理、上野耕平、太田実雄、徳本有紀、藤岡洋
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜、神奈川
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Basic characteristics of GaN prepared by pulsed sputtering deposition2017
- Author(s)
  Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
- Organizer
  SPIE Photonics West OPTO 2017
- Place of Presentation
  The Moscone Center, San Francisco, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] 非平衡状態の時間ドメイン制御による特異構造の創製2016
- Author(s)
  藤岡洋、上野耕平、小林篤、太田実雄
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ、新潟市
- Invited
- Data Source
  KAKENHI-ORGANIZER-16H06413
[Presentation] High Hole Mobility p-Type GaN with Extremely Low Residual Hydrogen Concentration Prepared by Pulsed Sputtering2016
- Author(s)
  Kohei Ueno, Yasuaki Arakawa, Atsushi Kobayashi, Jitsuo Ohta, and Hiroshi Fujioka
- Organizer
  International Workshop on Nitride Semiconductors (IWN2016)
- Place of Presentation
  Hilton Orland Lake Buena Vista, Florida, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] 非平衡状態の時間ドメイン制御による特異構造の創製2016
- Author(s)
  藤岡洋、上野耕平、小林篤、太田実雄
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ, 新潟
- Invited
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Challenge of GaN Substrates for Power Devices2016
- Author(s)
  Hiroshi Fujioka
- Organizer
  Workshop on Ultra-Precision Processing for Wide Bandgap Semiconductors (WUPP-2016)
- Place of Presentation
  Fleurlis Hotel, Taiwan
- Int'l Joint Research / Invited
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] PSD法によるGaNへのn型ドーピング技術の開発2016
- Author(s)
  上野耕平、荒川靖章、今別府秀行、小林篤、太田実雄、藤岡洋
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ、新潟
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] ハフニウム上に作製したGaN薄膜の特性評価2016
- Author(s)
  金惠蓮、太田実雄、小林篤、上野耕平、藤岡洋
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ、新潟
- Data Source
  KAKENHI-PLANNED-16H06414
[Presentation] Characteristics of GaN devices prepared by pulsed sputtering2013
- Author(s)
  Hiroshi Fujioka
- Organizer
  5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)
- Place of Presentation
  Nagoya, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Si(110) 基板上へのGaN 薄膜成長と中間層の効果2013
- Author(s)
  近藤尭之，上野耕平，太田実雄，藤岡　洋
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] PSD 法によるパターンサファイア基板上GaN 薄膜成長2013
- Author(s)
  上野耕平，井上　茂，太田実雄，藤岡　洋，尾嶋正治
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] 安定化ジルコニア基板上へのN 極性InN 薄膜の成長2013
- Author(s)
  大関正彬，大久保佳奈，小林　篤，太田実雄，尾嶋正治，藤岡　洋
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] 絶縁膜/ 極薄InN/YSZ 構造の作製と評価2013
- Author(s)
  大久保佳奈，小林　篤，太田実雄，尾嶋正治，藤岡　洋
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] 非晶質基板上へ成長したInN の特性評価2013
- Author(s)
  伊藤剛輝，小林　篤，太田実雄，藤岡　洋，尾嶋正治
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] N 極性InGaN/GaN 量子井戸構造の作製および評価2013
- Author(s)
  岸川英司，上野耕平，井上　茂，太田実雄，藤岡　洋
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] 窒化物LED 低温製造プロセスの開発2013
- Author(s)
  中村英司，上野耕平，井上　茂，太田実雄，藤岡　洋，尾嶋正治
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] ポリマーを出発材料に用いたグラファイトシート上への窒化物薄膜結晶成長と発光素子への応用2013
- Author(s)
  太田実雄，金子俊郎，平崎哲郎，植　仁志，児玉昌也，藤岡　洋
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] GaN growth on graphene by pulsed sputtering deposition2013
- Author(s)
  Jeongwoo Shon，太田実雄，上野耕平，藤岡　洋
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] PSD 法によるC ドープGaN 薄膜の成長2013
- Author(s)
  渡辺拓人，丹所昂平，井上　茂，太田実雄，藤岡　洋
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] 窒化物発光素子製造プロセスの低温化2013
- Author(s)
  中村英司，上野耕平，太田実雄，藤岡洋，尾嶋正治
- Organizer
  第43回結晶成長国内会議（NCCG-43）
- Place of Presentation
  長野市生涯学習センター
- Year and Date
  2013-11-07
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Comprehensive study of polarity flip mechanism at　thermally-oxidized AlN layers2012
- Author(s)
  Eiji Kishikawa, Kohei Ueno, Shigeru Inoue, Jitsuo Ohta, Masaharu Oshima, and Hiroshi Fujioka
- Organizer
  International Workshop on Nitride Semiconductors 2012　（IWN2012）
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Low-temperature growth of semipolar InAlN on YSZ substrates2012
- Author(s)
  M. Oseki, A. Kobayashi, J. Ohta, H. Fujioka, and M. Oshima
- Organizer
  International Workshop on Nitride Semiconductors 2012　（IWN2012）
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Nitride Devices Fabricated with Pulsed Sputtering Depositon2012
- Author(s)
  Hiroshi Fujioka
- Organizer
  Intensive Discussion on Growth of Nitride Semiconductors
- Place of Presentation
  Sendai, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Crystal Growth of Nitride Semiconductors on Large Substrates2012
- Author(s)
  Hiroshi Fujioka
- Organizer
  CCCG-16
- Place of Presentation
  Hefei, China
- Invited
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Feasibility of III-Nitride LEDs prepared on large area substrates2012
- Author(s)
  Hiroshi Fujioka
- Organizer
  2012 International Symposium on Crystal Growth
- Place of Presentation
  Seoul, Korea
- Invited
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] YSZ基板上への酸窒化インジウム混晶薄膜の作製2012
- Author(s)
  小林篤、伊藤剛輝、太田実雄、尾嶋正治、藤岡洋
- Organizer
  秋季第73回応用物理学会学術講演会
- Place of Presentation
  松山大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Si(110)基板上GaN薄膜の極性制御2012
- Author(s)
  近藤尭之、太田実雄、井上茂、藤岡洋
- Organizer
  秋季第73回応用物理学会学術講演会
- Place of Presentation
  松山大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] YSZ(111)基板上に作製したInN薄膜の特性2012
- Author(s)
  大久保佳奈，大関正彬，小林　篤，太田実雄，尾嶋正治，藤岡　洋
- Organizer
  秋季第73回応用物理学会学術講演会
- Place of Presentation
  松山大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] 高速エピタキシャル成長させたInN薄膜の特性評価2012
- Author(s)
  大関正彬、大久保佳奈、小林篤、太田実雄、尾嶋正治、藤岡洋
- Organizer
  秋季第73回応用物理学会学術講演会
- Place of Presentation
  松山大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] ZnO基板上へコヒーレント成長させた窒化物半導体薄膜の特性2012
- Author(s)
  小林篤，梶間智文，玉木啓晶，太田実雄，尾嶋正治，藤岡洋
- Organizer
  第42回結晶成長国内会議
- Place of Presentation
  九州大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] パルススパッタ堆積法によるサファイア基板上GaN(000-1)薄膜の高品質化2012
- Author(s)
  上野耕平，中村英司，岸川英司，井上茂，太田実雄，藤岡洋，尾嶋正治
- Organizer
  第42回結晶成長国内会議
- Place of Presentation
  九州大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] パルススパッタ法によるSi(110)基板上へのGaN薄膜成長と構造特性評価2012
- Author(s)
  近藤尭之，井上茂，太田実雄，藤岡洋
- Organizer
  第42回結晶成長国内会議
- Place of Presentation
  九州大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] YSZ基板を用いたc面InN薄膜の高品質化2012
- Author(s)
  大久保佳奈，大関正彬，小林篤，太田実雄，尾嶋正治，藤岡洋
- Organizer
  第42回結晶成長国内会議
- Place of Presentation
  九州大学
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Characteristics of InN and Related Materials with Various Surface Orientations2012
- Author(s)
  Hiroshi Fujioka, Kana Ohkubo, Masaaki Ooseki, Atsushi Kobayashi and Masaharu Oshima
- Organizer
  2012 Electronic Materials Conference (EMC2012)
- Place of Presentation
  Pennsylvania, USA
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Epitaxial growth of semipolar InAlN with high In concentrations on yttria-stabilized zirconia substrates2012
- Author(s)
  M. Oseki, A. Kobayashi, J. Ohta, H. Fujioka, and M. Oshima
- Organizer
  4th International Symposium on Growth of III-Nitrides (ISGN-4)
- Place of Presentation
  St. Petersburg, Russia
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Feasibility of large area nitride devices prepared by pulsed sputtering2012
- Author(s)
  Hiroshi Fujioka
- Organizer
  International Workshop on Nitride Semiconductors 2012　（IWN2012）
- Place of Presentation
  Sapporo, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Polarity inversion mechanism at oxidized AlN layers2012
- Author(s)
  E. Kishikawa, K. Ueno, S. Inoue, J. Ohta, H. Fujioka, and M. Oshima
- Organizer
  4th International Symposium on Growth of III-Nitrides (ISGN-4)
- Place of Presentation
  St. Petersburg, Russia
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Characterization of ultrathin InN films grown on YSZ substrates2012
- Author(s)
  K. Okubo, A. Kobayashi, J. Ohta, M. Oshima, and H. Fujioka
- Organizer
  4th International Symposium on Growth of III-Nitrides (ISGN-4)
- Place of Presentation
  St. Petersburg, Russia
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] InGaN prepared by pulsed sputtering and its application to solar cells2012
- Author(s)
  K. Morita, M. Katoh, J. Ohta, S. Inoue, H.Fujioka
- Organizer
  4th International Symposium on Growth of III-Nitrides (ISGN-4)
- Place of Presentation
  St. Petersburg, Russia
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Improvement in crystalline quality of GaN prepared by pulsed sputtering by the use of SiNx islands2012
- Author(s)
  T. Kondo, J. Ohta, S. Inoue, A. Kobayashi, and H. Fujioka
- Organizer
  4th International Symposium on Growth of III-Nitrides (ISGN-4)
- Place of Presentation
  St. Petersburg, Russia
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Feasibility of Large Area Nitride Semiconductor Devices2012
- Author(s)
  Hiroshi Fujioka
- Organizer
  The 1st International Symposium on Single Crystals and Wafers for LEDs
- Place of Presentation
  Wonju, Korea
- Invited
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Future prospect of large area nitride devices prepared by pulsed sputtering deposition2012
- Author(s)
  Hiroshi Fujioka
- Organizer
  4th International Symposium on Growth of III-Nitrides (ISGN-4)
- Place of Presentation
  St. Petersburg, Russia
- Invited
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Optical and structural characteristics of nonpolar InGaN and InAlN films grown on ZnO substrates2012
- Author(s)
  Atsushi Kobayashi, Hiroaki Tamaki, JitsuoOhta, Masaharu Oshima, and Hiroshi Fujioka
- Organizer
  International Workshop on Nitride Semiconductors 2012　（IWN2012）
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Pulsed sputtering deposition of high-quality AlN on　thermally-nitrided sapphire substrates2012
- Author(s)
  Kohei Ueno, Eiji Kishikawa, Shigeru Inoue, Jitsuo Ohta, Hiroshi Fujioka, Masaharu Oshima, and Hiroyuki Fukuyama
- Organizer
  International Workshop on Nitride Semiconductors 2012　（IWN2012）
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] ZnO基板上への全組成域m面InAlN薄膜のエピタキシャル成長2011
- Author(s)
  梶間智文, 上野耕平, 小林篤, 太田実雄, 藤岡洋, 尾嶋正治
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
- Year and Date
  2011-03-27
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] 窒化サファイア基板上に成長したAlN薄膜の微細構造観察2011
- Author(s)
  上野耕平, 太田実雄, 藤岡洋, 福山博之
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
- Year and Date
  2011-03-25
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] PSD法により成長したGaN薄膜の電気特性2011
- Author(s)
  丹所昂平, 井上茂, 太田実雄, 藤岡洋
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
- Year and Date
  2011-03-27
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] グラファイトシート上GaN青色LEDの作製2011
- Author(s)
  金子俊郎, 太田実雄, 井上茂, 藤岡洋
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] マイカ基板を用いたIII族窒化物LEDの作製2011
- Author(s)
  野村周平, 田村和也, 太田実雄, 井上茂, 藤岡洋
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] 無極性面・半極性面ZnO基板上InGaNの偏光スイッチング2011
- Author(s)
  玉木啓晶, 小林篤, 太田実雄, 尾嶋正治, 藤岡洋
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] 原子散乱表面分光法による半極性面AlN/ZnOの極性判定2011
- Author(s)
  小林篤, 上野耕平, 太田実雄, 藤岡洋, 尾嶋正治, 中西繁光, 東堤秀明
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
- Year and Date
  2011-03-25
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Al2O3/InN界面の電子状態評価2011
- Author(s)
  大久保佳奈, 小林篤, 太田実雄, 藤岡洋, 尾嶋正治
- Organizer
  春季第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集DVD(震災のため学会が中止となった。既に予稿集DVDが発行済みであったため、学会事務局の判断で発表の扱いとなった。))
- Year and Date
  2011-03-25
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] ZnO基板上への無極性面・半極性面InAlN薄膜の成長2010
- Author(s)
  梶間智文, 上野耕平小林篤, 太田実雄, 藤岡洋, 尾嶋正治
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学
- Year and Date
  2010-05-15
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Smart Sheet Technology for Optical and PV Devices2010
- Author(s)
  Hiroshi Fujioka
- Organizer
  The 2010 USTO Photovoltaics Energy Workshop
- Place of Presentation
  Algiers, Algeria
- Year and Date
  2010-05-10
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Feasibility study on Future large area nitride devices2010
- Author(s)
  Hiroshi Fujioka
- Organizer
  The European Workshop on Compound Semiconductor Devices and Integrated Circuits
- Place of Presentation
  Darmstadt/Seeheim, Germany
- Year and Date
  2010-05-17
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Growth Orientation Control of InN by Pulsed Excitation Deposition2010
- Author(s)
  Hiroshi Fujioka, Tomoaki Fujii, Atsushi Kobayashi, Jitsuo Ohta, Masaharu Oshima
- Organizer
  ELECTRONIC MATERIALS CONFERENCE
- Place of Presentation
  South Bend, U.S.A
- Year and Date
  2010-06-25
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] 高In濃度InGaNを用いた太陽電池の試作2010
- Author(s)
  井上茂, 太田実雄, 加藤雅樹, 田村和也, 藤岡洋
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Rh(111)基板上への窒化物成長初期過程の解析2010
- Author(s)
  岡野雄幸, 井上茂, 上野耕平, 小林篤, 太田実雄, 尾嶋正治, 藤岡洋
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] ZnO基板上半極性面AlGaN薄膜の偏光特性評価2010
- Author(s)
  上野耕平, 小林篤, 太田実雄, 藤岡洋
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] ZnO基板上高In組成m面InGaN薄膜の構造特牲及び偏光特性2010
- Author(s)
  玉木啓晶, 小林篤, 太田実雄, 尾嶋正治, 藤岡洋
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] ZnO基板上高In組成m面InGaN薄膜の偏光特性2010
- Author(s)
  玉木啓晶、小林篤、太田実雄、尾嶋正治、藤岡洋
- Organizer
  応用物理学会結晶工学分科会主催2010年・年末講演会「エレクトロニクスの将来ビジョン～発展史マップとアカデミックロードマップ～&若手ポスター発表会」
- Place of Presentation
  学習院大学
- Year and Date
  2010-12-17
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] ZnO基板上半極性面AlGaN/AlNヘテロ構造の作製と光学特性評価2010
- Author(s)
  上野耕平、小林篤、太田実雄、藤岡洋
- Organizer
  応用物理学会結晶工学分科会主催2010年・年末講演会「エレクトロニクスの将来ビジョン～発展史マップとアカデミックロードマップ～&若手ポスター発表会」
- Place of Presentation
  学習院大学
- Year and Date
  2010-12-17
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] 放射光光電子分光による極性面・無極性面GaN/ZnOヘテロ界面の解析2010
- Author(s)
  劉江偉, 小林篤, 豊田智史, 菊池亮, 太田実雄, 藤岡洋, 組頭広志, 尾嶋正治
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] サハラソーラーブリーダー計画2010
- Author(s)
  藤岡洋
- Organizer
  JST-SNTTワークショップ「開発途上国の持続可能な資源開発」
- Place of Presentation
  JSTホール(東京)
- Year and Date
  2010-10-06
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] 半極性面AlV/InNヘテロ構造の作製と評価2010
- Author(s)
  小林篤, 藤井智明, 太田実雄, 藤岡洋, 尾嶋正治
- Organizer
  第29回電子材料シンポジウム
- Place of Presentation
  ラフォーレ修善寺
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] ZnO基板から異方的歪みを受けたm面InGaN薄膜の偏光特性2010
- Author(s)
  玉木啓晶, 小林篤, 太田実雄, 尾嶋正治, 藤岡洋
- Organizer
  第29回電子材料シンポジウム
- Place of Presentation
  ラフォーレ修善寺
- Year and Date
  2010-07-14
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] ZnO基板上への高In組成m面InAlN薄膜の成長2010
- Author(s)
  梶間智文, 上野耕平, 小林篤, 太田実雄, 藤岡洋, 尾嶋正治
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] YSZ基板上に成長したInNの極性制御と成長モード2010
- Author(s)
  小林篤, 大久保佳奈, 太田実雄, 藤岡洋, 尾嶋正治
- Organizer
  秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] BNTCA-BPTAポリマー焼結グラファイトシート上へのGaN薄膜成長2010
- Author(s)
  金子俊郎, 太田実雄, 藤岡洋, 山下順也, 羽鳥浩章, 児玉昌也, 平崎哲郎, 植仁志
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学
- Year and Date
  2010-05-15
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] パルススパッタ法による太陽電池用InGaN薄膜の作製2010
- Author(s)
  加藤雅樹, 田村和也, 井上茂, 太田実雄, 藤岡洋
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学
- Year and Date
  2010-05-15
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] ZnO基板から異方的歪みを受けたm面InGaN薄膜の偏光特性2010
- Author(s)
  玉木啓晶, 小林篤, 太田実雄, 藤岡洋, 尾嶋正治
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学
- Year and Date
  2010-05-15
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] FUTURE LARGE AREA NITRIDE DEVICES FABRICATED WITH LOW TEMPERATURE PXD PROCESS2010
- Author(s)
  Hiroshi Fujioka
- Organizer
  The International Workshop on Nitride semiconductors 2010 (IWN2010)
- Place of Presentation
  Tampa Florida, USA
- Year and Date
  2010-09-21
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Improvement in crystalline quality of semipolar AlN (1-102) films by using ZnO substrates with self-organized nanostripes2010
- Author(s)
  Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta, Hiroshi Fujioka
- Organizer
  The 3rd International Symposium on Growth of III-Nitrides (ISGN-3)
- Place of Presentation
  Montpellier, France
- Year and Date
  2010-07-06
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Possibility of Large Area III-V Semiconductor Devices2010
- Author(s)
  Hiroshi Fujioka
- Organizer
  Collaborative Conference on Crystal Growth (3CG)
- Place of Presentation
  Miami, Florida, US
- Year and Date
  2010-11-29
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Development of Future large area Group III nitride devices2010
- Author(s)
  Hiroshi Fujioka
- Organizer
  2010 International Symposium on Crystal Growth
- Place of Presentation
  seoul, Korea
- Year and Date
  2010-11-08
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Feasibility study on Future large area nitride devices2010
- Author(s)
  Hiroshi Fujioka
- Organizer
  The European Workshop on Compound Semiconductor Devices and Integrated Circuits(Invited)
- Place of Presentation
  Germany
- Year and Date
  2010-05-17
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Future large area nitride devices fabricated with low temperature PXD process2010
- Author(s)
  Hiroshi Fujioka
- Organizer
  The International Workshop on Nitride semiconductors 2010(Invited)
- Place of Presentation
  U.S.A
- Year and Date
  2010-09-21
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Growth Orientation Control of InN by Pulsed Excitation Deposition2010
- Author(s)
  Hiroshi Fujioka
- Organizer
  Electronic Materials Conference(Invited)
- Place of Presentation
  U.S.A
- Year and Date
  2010-06-25
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] 窒化物半導体太陽電池の将来2010
- Author(s)
  藤岡洋
- Organizer
  GaN系プラネットコンシャスデバイス・材料の現状
- Place of Presentation
  東北大学多元物質科学研究所
- Year and Date
  2010-11-05
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] PSD法による高品質窒化物成長の検討2010
- Author(s)
  藤岡洋
- Organizer
  第3回窒化物半導体の高品質結晶成長とその素子応用
- Place of Presentation
  東北大学金属材料研究所
- Year and Date
  2010-10-25
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] PSD法を用いた大面積窒化物素子作製の可能性2009
- Author(s)
  藤岡洋
- Organizer
  第2回窒化物半導体ワークショップ
- Place of Presentation
  東北大学
- Year and Date
  2009-12-22
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Fabrication of flexible devices with low temperature epitaxial growth technique2009
- Author(s)
  藤岡洋
- Organizer
  MNC2009
- Place of Presentation
  Sapporo, Hokkaidou Japan
- Year and Date
  2009-11-16
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Feasibility study on large area nitride devices2009
- Author(s)
  藤岡洋
- Organizer
  Satellite Workshop on Nitride Semiconductors
- Place of Presentation
  Seoul, Korea
- Year and Date
  2009-10-26
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Room Temperature Epitaxial Growth of Nitride Semiconductors2009
- Author(s)
  藤岡洋
- Organizer
  NMDT-NGPC
- Place of Presentation
  Algiers, Algeria
- Year and Date
  2009-05-20
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] 大面積化合物半導体エレクトロニクスの可能性2009
- Author(s)
  藤岡洋
- Organizer
  第13回名古屋大学VBLシンポジウム
- Place of Presentation
  名古屋大学
- Year and Date
  2009-11-10
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] 大面積単結晶エレクトロニクスの展望2009
- Author(s)
  藤岡洋
- Organizer
  ポストシリコン物質・デバイス創製基盤技術アライアンス「新機能ナノエレクトロニクス」グループ分科会
- Place of Presentation
  北海道大学
- Year and Date
  2009-10-09
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Room temperature epitaxial growth of InGaN and its Application to Solar Cells2009
- Author(s)
  藤岡洋
- Organizer
  ICAM2009
- Place of Presentation
  Rio de Janeiro, Brazil
- Year and Date
  2009-09-23
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Development of room temperature epitaxial growth technique for nitride optical devices2009
- Author(s)
  藤岡洋
- Organizer
  5th International Symposium on Laser, Scintillator and Non Linear Optical Materials
- Place of Presentation
  Pisa, Italy
- Year and Date
  2009-09-05
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Room temperature epitaxial growth of group III nitride semiconductors2009
- Author(s)
  藤岡洋
- Organizer
  ROMANIAN CONFERENCE ON ADVANCED MATERIALS
- Place of Presentation
  Bucharest, Romania
- Year and Date
  2009-08-28
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Room temperature growth of group III nitride crystals2009
- Author(s)
  藤岡洋
- Organizer
  2009 Japan-China Crystal Grows and Crystal Technology Symposium
- Place of Presentation
  Suita, Osaka Japan
- Year and Date
  2009-07-23
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] High Quality Group III Nitrides Grown on ZnO Substrates2009
- Author(s)
  H. Fujioka
- Organizer
  OPT02009
- Place of Presentation
  San Jose, USA
- Year and Date
  2009-01-25
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Low Temperature Epitaxial Growth of Group III Nitrides by Pulsed Excitation Deposition2009
- Author(s)
  H. Fujioka
- Organizer
  OPT02009
- Place of Presentation
  San Jose, USA
- Year and Date
  2009-01-26
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Fabrication of semiconductor nanostructures by room temperature epitaxial growth techniques2008
- Author(s)
  H. Fujioka
- Organizer
  Thin Films 2008
- Place of Presentation
  Singapore, Singapore
- Year and Date
  2008-09-25
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Low Temperature Epitaxial Growth of Semiconductors on Metal Substrates2008
- Author(s)
  H. Fujioka
- Organizer
  SSDM2008
- Place of Presentation
  Tsukuba Japan
- Year and Date
  2008-09-25
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Group III nitride Nanostructures Prepared by Room Temperature Epitaxial Growth2008
- Author(s)
  H. Fujioka
- Organizer
  CGCT4
- Place of Presentation
  Sendai, Japan
- Year and Date
  2008-05-24
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Growth of cubic InN with high phase purity by pulsed laser deposition2008
- Author(s)
  A. Kobayashi, R. Ohba, J. Ohta, H. Fujioka, and M. Oshima
- Organizer
  2nd International symposium on growth of nitrides
- Place of Presentation
  Shuzenji, Japan
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Low temperature epitaxial growth of high quality GaN2007
- Author(s)
  H. Fujioka
- Organizer
  1st International Conference on White LEDs and Solid State Lighting
- Place of Presentation
  Japan
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] パルス励起堆積(PXD)法による窒化物室温エピタキシャル成長2007
- Author(s)
  藤岡洋
- Organizer
  応用物理学会応用電子物性分科会研究例会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Room Temperature Epitaxial Growth of Group III Nitrides by Pulsed Excitation Deposition2007
- Author(s)
  H. Fujioka
- Organizer
  1st China-Japan Crystal Growth & Technology Symposium
- Place of Presentation
  China
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Room Temperature Epitaixial Growth of Group III Nitrides2007
- Author(s)
  H. Fujioka
- Organizer
  The Second Polish-Japanese German Crystal Growth Meeting
- Place of Presentation
  USA
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Growth of High Quality Non-polar and Semi-polar GaN on Nearly Lattice Matched ZnO Substrates2007
- Author(s)
  H. Fujioka
- Organizer
  14th Semiconducting and Insulating Materials Conference
- Place of Presentation
  USA
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Room Temperature Epitaixial Growth of Group III Nitrides2007
- Author(s)
  H. Fujioka
- Organizer
  15th International conference on crystal growth
- Place of Presentation
  USA
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] パルス励起堆積(PXD)法によるInN系薄膜の低温成長2007
- Author(s)
  藤岡洋
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] 窒化物半導体結晶の室温成長技術2007
- Author(s)
  藤岡洋
- Organizer
  プレISGN-2シンポジウム「未来を切り開く窒化物半導体結晶」
- Place of Presentation
  東京
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Room Temperature Epitaixial Growth of Group III Nitrides2007
- Author(s)
  H. Fujioka, S. Inoue, T. Nakano, and J. Ohta
- Organizer
  15th International conference on crystal growth
- Place of Presentation
  Salt lake city, USA
- Data Source
  KAKENHI-PLANNED-18069003
[Presentation] Nitride Materials and Devices Prepared by Pulsed Sputtering
- Author(s)
  H. Fujioka
- Organizer
  International Conference on Metamaterials and Nanophysics
- Place of Presentation
  Hotel Melia Varadero, Cuba
- Year and Date
  2014-04-22 – 2014-05-01
- Invited
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Pulsed Sputtering Technique for Fabrication of Future Nitride Devices
- Author(s)
  H. Fujioka
- Organizer
  E-MRS 2014 SPRING MEETING, SYMPOSIUM K
- Place of Presentation
  Congress Center, Lille, France
- Year and Date
  2014-05-26 – 2014-05-30
- Invited
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Fabrication of Nitride Devices by Pulsed Sputtering Deposition
- Author(s)
  H. Fujioka
- Organizer
  CIMTEC2014
- Place of Presentation
  Montecatini Terme, Italy
- Year and Date
  2014-06-15 – 2014-06-19
- Invited
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] PSD 法により作製した高In 組成InGaN 薄膜の光学定数評価
- Author(s)
  野口英成, 上野耕平, 太田実雄, 小林篤, 藤岡洋
- Organizer
  第6回　窒化物半導体結晶成長講演会
- Place of Presentation
  名城大学
- Year and Date
  2014-07-25 – 2014-07-26
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Preparation of Nitride Devices by Plasma Processing
- Author(s)
  H. Fujioka
- Organizer
  ISPlasma 2014
- Place of Presentation
  名古屋大学
- Year and Date
  2014-03-02 – 2014-03-06
- Invited
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] Characteristics of GaN Films Prepared by PXD and Their Device Applications
- Author(s)
  H. Fujioka
- Organizer
  ICMAT2013
- Place of Presentation
  Suntec International Convention & Exhibition Centre, Singapore
- Year and Date
  2013-06-30 – 2013-07-05
- Invited
- Data Source
  KAKENHI-PROJECT-24245040
[Presentation] PSD法により成長したInGaN薄膜の光学特性評価
- Author(s)
  上野耕平，野口英成，太田実雄，藤岡　洋，尾嶋正治
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Year and Date
  2014-03-17 – 2014-03-20
- Data Source
  KAKENHI-PROJECT-24245040

1. OHTA Jitsuo (60392924)

# of Collaborated Projects : 2results

# of Collaborated Products : 54results
2. OSHIMA Masaharu (30280928)

# of Collaborated Projects : 2results

# of Collaborated Products : 0results
3. ONO Kanta (70282572)

# of Collaborated Projects : 2results

# of Collaborated Products : 0results
4. 大渕博宣 (40312996)

# of Collaborated Projects : 1results

# of Collaborated Products : 0results
5. 酒井朗 (20314031)

# of Collaborated Projects : 1results

# of Collaborated Products : 0results
6. 川上養一 (30214604)

# of Collaborated Projects : 1results

# of Collaborated Products : 0results
7. 小出康夫 (70195650)

# of Collaborated Projects : 1results

# of Collaborated Products : 0results
8. 三宅秀人 (70209881)

# of Collaborated Projects : 1results

# of Collaborated Products : 0results
9. 橋詰保 (80149898)

# of Collaborated Projects : 1results

# of Collaborated Products : 0results
10. 徳本有紀 (20546866)

# of Collaborated Projects : 1results

# of Collaborated Products : 1results
11. 上山智 (10340291)

# of Collaborated Projects : 1results

# of Collaborated Products : 0results

FUJIOKA Hiroshi 藤岡 洋

Research Projects

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Co-Researchers

Materials Science and Advanced Elecronics created by singularityArea Organizer

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総括班Principal InvestigatorOngoing

Principal Investigator

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非平衡状態の時間ドメイン制御による特異構造の創製Principal InvestigatorOngoing

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国際活動支援班Principal InvestigatorOngoing

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Flexible electronics on mica substratesPrincipal Investigator

Principal Investigator

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Low temperature growth of InN films by pulsed excitation depositionPrincipal Investigator

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Development of devices with single crystalline Si grown on steelPrincipal Investigator

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Research on GaN Light Emitting Devices on Quasi-Single Crystal Metal SubstratesPrincipal Investigator

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Photon and spin control devices using semiconductor/magnetic quanturn nanostructures

Principal Investigator

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Development of ultra-thin insulator films for next-generation super-high density devices

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[Journal Article] Low-temperature pulsed sputtering growth of InGaN multiple quantum wells for photovoltaic devices2017

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Journal Title

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[Journal Article] N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering2017

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[Journal Article] Electrical properties of Si-doped GaN prepared using pulsed sputtering2017

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[Journal Article] Dramatic reduction in process temperature of InGaN based light emitting diodes by pulsed sputtering growth technique2014

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[Journal Article] Structural properties of m-plane InAlN films grown on ZnO substrates with room-temperature GaN buffer layers2013

Author(s)

FUJIOKA Hiroshi 藤岡洋