Sato Hiroshi 佐藤弘

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SATO Hiroshi 佐藤弘

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Researcher Number	50357141
Affiliation (Current)	2025: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 研究チーム長
Affiliation (based on the past Project Information) *help	2024 – 2025: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 研究チーム長 2011: 独立行政法人産業技術総合研究所, 電子光技術研究部門, 研究チーム長 2010: 独立行政法人産業技術総合研究所, エレクトロニクス研究部門, 研究グループ付 2009: National Institute of Advanced Industrial Science and Technology, エレクトロニクス研究部門, 主任研究員
Review Section/Research Field	Principal Investigator Inorganic materials/Physical properties Except Principal Investigator Broad Section B
Keywords	Principal Investigator スピンSEM / スピン注入磁化反転 / 磁性トンネル接合 / ハーフメタル / 強相関酸化物 Except Principal Investigator 生体電位 / パワー素子 / 電磁場イメージング / 生物 / パワーデバイス / 電磁場計測 / 顕微鏡 / ミュオン

Transmission muon microscopy for visualizing electromagnetic fields inside of power-devices and life
- Principal Investigator
  
  永谷幸則
- Project Period (FY)
  2024 – 2028
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Review Section
  
  Broad Section B
- Research Institution
  High Energy Accelerator Research Organization
Study on spin tunnel junctions using strong correlated oxide films for spin torque transferPrincipal Investigator
- Principal Investigator
  
  SATO Hiroshi
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Inorganic materials/Physical properties
- Research Institution
  National Institute of Advanced Industrial Science and Technology

All 2012 2011 2010

All Journal Article Presentation Patent

[Journal Article] Strain-Mediated Phase Control and Electrolyte-Gating of Electron-Doped Manganites2011
- Author(s)
  P.H.Xiang, S.Asanuma, H.Yamada, I.H. Inoue, H.Sato, H.Akoh, A.Sawa, K.Ueno, H.T.Yuan, H.Shimotani, M.Kawasaki, Y.Iwasa
- Journal Title
  
  Advanced Materials
  
  Volume: 23 Issue: 48 Pages: 5822-5827
- DOI
  10.1002/adma.201102968
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21224009, KAKENHI-PROJECT-21560707, KAKENHI-PUBLICLY-22015012, KAKENHI-PROJECT-22360280, KAKENHI-PROJECT-23656011
[Journal Article] Tuning of the metal-insulator transition in electrolyte-gated NdNiO_3 thin films2010
- Author(s)
  S. Asanuma, P.-H. Xiang, H. Yamada, H. Sato, I. H. Inoue, H. Akoh, A. Sawa, K. Ueno, H. Shimotani, H. Yuan, M. Kawasaki, and Y. Iwasa
- Journal Title
  
  Applied Physics Letters
  
  Volume: 97巻 Issue: 14
- DOI
  10.1063/1.3496458
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560707, KAKENHI-PROJECT-22360280
[Journal Article] Tuning of the metal-insulator transition in electrolyte-gated NdNiO3 thin films2010
- Author(s)
  S.Asanuma, P.-H.Xiang, H.Yamada, H.Sato, I.H.Inoue, H.Akoh, A.Sawa, K.Ueno, H.Shimotani, H.Yuan, M.Kawasaki, Y.Iwasa
- Journal Title
  
  APPLIED PHYSICS LETTERS
  
  Volume: 97
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560707
[Patent] ペロブスカイト型の複合酸化物をチャンネル層とする電界効果トランジスタ及びその製造方法と、これを利用したメモリ素子2010
- Inventor(s)
  澤彰仁、浅沼周太郎、井上公、佐藤弘、赤穂博司、山田浩之、岩佐義弘
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Number
  2010-112133
- Filing Date
  2010-05-14
- Data Source
  KAKENHI-PROJECT-21560707
[Patent] ペロブスカイト型の複合酸化物をチャンネル層とする電界効果トランジスタ及びその製造方法と、これを利用したメモリ素子2010
- Inventor(s)
  澤彰仁, 浅沼周太郎, 井上公, 佐藤弘, 赤穂博司, 山田浩之, 岩佐義弘
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Number
  2010-112133
- Filing Date
  2010-05-14
- Data Source
  KAKENHI-PROJECT-21560707
[Patent] ペロブスカイト型の複合酸化物をチャンネル層とする電界効果トランジスタ及びその製造方法と、これを利用したメモリ素子2010
- Inventor(s)
  山田浩之、向平華、澤彰仁、井上公、佐藤弘、浅沼周太郎、赤穗博司
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Industrial Property Number
  2010-264199
- Filing Date
  2010-11-16
- Data Source
  KAKENHI-PROJECT-21560707
[Patent] ペロブスカイト型の複合酸化物をチャンネル層とする電界効果トランジスタ及びその製造方法と、これを利用したメモリ素子2010
- Inventor(s)
  澤彰仁、浅沼周太郎、井上公、佐藤弘、赤穗博司、山田浩之、岩佐義宏
- Industrial Property Rights Holder
  独立行政法人産業技術総合研究所
- Patent Publication Number
  2011-243632
- Filing Date
  2010-05-14
- Data Source
  KAKENHI-PROJECT-21560707
[Presentation] (Nd,Sm)NiO3電気二重層トランジスタの動作特性2012
- Author(s)
  浅沼周太郎、Xiang Ping-Hua、山田浩之、佐藤弘、井上公、赤穗博司、澤彰仁、上野和紀、下谷秀和、川崎雅司、岩佐義宏
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21560707
[Presentation] Insulator-to-Metal Transition in Manganite by Electric Double Layer Gating2011
- Author(s)
  Xiang Ping-Hua、浅沼周太郎、山田浩之、井上公、佐藤弘、赤穗博司、澤彰仁、上野和紀、Yuan Hongtao、下谷秀和、川崎雅司、岩佐義宏
- Organizer
  18th International Workshop on Oxide Electronics
- Place of Presentation
  Marriot Napa Valley Hotel and Spa(Napa, CA, USA)
- Year and Date
  2011-09-26
- Data Source
  KAKENHI-PROJECT-21560707
[Presentation] Developments of Mott Transistor2011
- Author(s)
  浅沼周太郎、Xiang Ping-Hua、山田浩之、佐藤弘、井上公、赤穗博司、澤彰仁、上野和紀、下谷秀和、川崎雅司、岩佐義宏
- Organizer
  Frontier of Functional-Oxide Nano Electronics
- Place of Presentation
  物質・材料研究機構(茨城県)
- Year and Date
  2011-11-11
- Data Source
  KAKENHI-PROJECT-21560707
[Presentation] Electric-Field Control of Metal-Insulator Transition in (Nd, Sm) NiO3 at Room Temperature2011
- Author(s)
  浅沼周太郎、Xiang Ping-Hua、山田浩之、佐藤弘、井上公、赤穗博司、澤彰仁、上野和紀、下谷秀和、川崎雅司、岩佐義宏
- Organizer
  FIRST-QS2C Workshop on "Emergent Phenomena of Correlated Materials"
- Place of Presentation
  ANAインターコンチネンタル万座ビーチリゾート(沖縄県)
- Year and Date
  2011-12-13
- Data Source
  KAKENHI-PROJECT-21560707
[Presentation] Control of electronic phases in electrolyte-gated (Nd, Sm) NiO3 thin film at room temperature2011
- Author(s)
  浅沼周太郎、Xiang Ping-Hua、山田浩之、佐藤弘、井上公、赤穗博司、澤彰仁、上野和紀、下谷秀和、川崎雅司、岩佐義宏
- Organizer
  18th International Workshop on Oxide Electronics
- Place of Presentation
  Marriot Napa Valley Hotel and Spa, (Napa, CA, USA)
- Year and Date
  2011-09-26
- Data Source
  KAKENHI-PROJECT-21560707
[Presentation] Electric field control of the metal-insulator transition in electrolyte-gated(Nd, Sm) NiO3 thin films2011
- Author(s)
  浅沼周太郎、Xiang Ping-Hua、山田浩之、佐藤弘、井上公、赤穗博司、澤彰仁、上野和紀、川崎雅司、岩佐義宏
- Organizer
  MRS spring meeting
- Place of Presentation
  San Francisco, USA
- Year and Date
  2011-04-26
- Data Source
  KAKENHI-PROJECT-21560707
[Presentation] Insulator-to-Metal Transition in Manganite by Electric Double Layer Gating2011
- Author(s)
  Xiang Ping-Hua、浅沼周太郎、山田浩之、井上公、佐藤弘、赤穗博司、澤彰仁、上野和紀、Yuan Hongtao、下谷秀和、川崎雅司、岩佐義宏
- Organizer
  18th International Workshop on Oxide Electronics
- Place of Presentation
  Marriot Napa Valley Hotel and Spa, (Napa, CA, USA)
- Year and Date
  2011-09-26
- Data Source
  KAKENHI-PROJECT-21560707
[Presentation] 電気二重層FETによる(Nd,Sm)NiO3の室温での電子相制御2011
- Author(s)
  浅沼周太郎、Xiang Ping-Hua、山田浩之、佐藤弘、井上公、赤穗博司、澤彰仁、上野和紀、下谷秀和、川崎雅司、岩佐義宏
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形県)
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-21560707
[Presentation] Strain-Mediated Phase Control and Electrolyte-Gating of Electron-Doped Manganites2011
- Author(s)
  Xiang Ping-Hua、浅沼周太郎、山田浩之、井上公、佐藤弘、赤穗博司、澤彰仁、上野和紀、Yuan Hongtao、下谷秀和、川崎雅司、岩佐義宏
- Organizer
  FIRST-QS2C Workshop on "Emergent Phenomena of Correlated Materials"
- Place of Presentation
  ANAインターコンチネンタル万座ビーチリゾート(沖縄県)
- Year and Date
  2011-12-13
- Data Source
  KAKENHI-PROJECT-21560707
[Presentation] Electric field control of the metal-insulator transition in electrolyte-gated (Nd, Sm) NiO3 thin films2011
- Author(s)
  浅沼周太郎、Xiang Ping-Hua、山田浩之、佐藤弘、井上公、赤穗博司、澤彰仁、上野和紀、川崎雅司、岩佐義宏
- Organizer
  MRS spring meeting
- Place of Presentation
  Moscone West Convention Center (San Francisco, CA, USA)
- Year and Date
  2011-04-26
- Data Source
  KAKENHI-PROJECT-21560707
[Presentation] 電気二重層FETによるNdNiO_3の金属-絶縁体転移の電界制御2010
- Author(s)
  浅沼周太郎、向平華、山田浩之、佐藤弘、井上公、赤穗博司、澤彰仁、上野和紀、川崎雅司、岩佐義宏
- Organizer
  応用物理学会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-21560707
[Presentation] PLD法によるNd_<1-x>Sm_xNiO_3薄膜の製膜と物性評価2010
- Author(s)
  浅沼周太郎、向平華、山田浩之、井上公、佐藤弘、澤彰仁、赤穗博司
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-21560707
[Presentation] PLD法によるNd1-xSmxNiO3薄膜の製膜と物性評価2010
- Author(s)
  浅沼周太郎、Xiang Ping-Hua、山田浩之、井上公、佐藤弘、澤彰仁、赤穗博司
- Organizer
  応用物理学会
- Place of Presentation
  東海大学
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-21560707

1. KONOTO Makoto (80425735)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
2. 永谷幸則 (00393421)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. 臼田信光 (30135123)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. 千田俊哉 (30272868)

# of Collaborated Projects: 1 results

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5. 城倉浩平 (30303473)

# of Collaborated Projects: 1 results

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6. 山崎高幸 (40632360)

# of Collaborated Projects: 1 results

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7. 下村浩一郎 (60242103)

# of Collaborated Projects: 1 results

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8. 大石裕 (60569804)

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9. 佐々木憲一 (70322831)

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10. 深澤元晶 (70387728)

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11. 中沢雄河 (70986588)

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12. 中村真毅 (90323211)

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13. 大西純一 (30634703)

# of Collaborated Projects: 1 results

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14. SHIMOTANI Hidekazu

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15. UENO Kazunori

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16. 岩佐義宏

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# of Collaborated Products: 1 results

Sato Hiroshi 佐藤 弘

SATO Hiroshi 佐藤 弘

Research Projects

Research Products

Co-Researchers

Transmission muon microscopy for visualizing electromagnetic fields inside of power-devices and life

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Study on spin tunnel junctions using strong correlated oxide films for spin torque transferPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Strain-Mediated Phase Control and Electrolyte-Gating of Electron-Doped Manganites2011

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Tuning of the metal-insulator transition in electrolyte-gated NdNiO_3 thin films2010

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Tuning of the metal-insulator transition in electrolyte-gated NdNiO3 thin films2010

Author(s)

Journal Title

Data Source

[Patent] ペロブスカイト型の複合酸化物をチャンネル層とする電界効果トランジスタ及びその製造方法と、これを利用したメモリ素子2010

Inventor(s)

Industrial Property Rights Holder

Industrial Property Number

Filing Date

Data Source

[Patent] ペロブスカイト型の複合酸化物をチャンネル層とする電界効果トランジスタ及びその製造方法と、これを利用したメモリ素子2010

Inventor(s)

Industrial Property Rights Holder

Industrial Property Number

Filing Date

Data Source

[Patent] ペロブスカイト型の複合酸化物をチャンネル層とする電界効果トランジスタ及びその製造方法と、これを利用したメモリ素子2010

Inventor(s)

Industrial Property Rights Holder

Industrial Property Number

Filing Date

Data Source

[Patent] ペロブスカイト型の複合酸化物をチャンネル層とする電界効果トランジスタ及びその製造方法と、これを利用したメモリ素子2010

Inventor(s)

Industrial Property Rights Holder

Patent Publication Number

Filing Date

Data Source

[Presentation] (Nd,Sm)NiO3電気二重層トランジスタの動作特性2012

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Insulator-to-Metal Transition in Manganite by Electric Double Layer Gating2011

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Developments of Mott Transistor2011

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Electric-Field Control of Metal-Insulator Transition in (Nd, Sm) NiO3 at Room Temperature2011

Author(s)

Organizer

Place of Presentation

Year and Date

Data Source

[Presentation] Control of electronic phases in electrolyte-gated (Nd, Sm) NiO3 thin film at room temperature2011

Sato Hiroshi 佐藤弘

SATO Hiroshi 佐藤弘