Makimoto Toshiki 牧本俊樹

… Alternative Names

牧本俊樹マキモトトシキ

MAKIMOTO Toshiki 牧本俊樹

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Researcher Number	50374070
Other IDs
Affiliation (Current)	2025: 早稲田大学, 理工学術院, 教授
Affiliation (based on the past Project Information) *help	2019 – 2023: 早稲田大学, 理工学術院, 教授 2014 – 2016: 早稲田大学, 理工学術院, 教授 2009: 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 部長 2007: 日本電信電話株式会社NTT物性科学基礎研究所, 企画担当, 主幹研究員 2006: 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 主幹研究員
Review Section/Research Field	Principal Investigator Basic Section 30010:Crystal engineering-related / Crystal engineering Except Principal Investigator Applied materials science/Crystal engineering
Keywords	Principal Investigator MBE / 光学特性 / 結晶成長 / 電気伝導特性 / Nクラスター / 局在準位 / S-shape特性 / バンドギャップエネルギー / 有効質量 / 光伝導特性 … More / エキシトン / 電気伝導 / AlGaAsN / 超格子 / 光伝導 / PL / 励起子 / GaAsN / XPS / BAlN / BGaN / B固体ソース / RFプラズマ / ダメージ / ホール / ラマン / 窒素プラズマ / BN / AlN / 窒化物半導体 / グラフェン … More Except Principal Investigator エピタキシャル成長 / 光物性 / 半導体物性 / 結晶成長 / 半導体 Less

Research on growth of high-quality GaAs-based superlattices and stable excitonsPrincipal Investigator
- Principal Investigator
  
  Makimoto Toshiki
- Project Period (FY)
  2019 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Waseda University
Growth of BN on graphene by RF-MBEPrincipal Investigator
- Principal Investigator
  
  Makimoto Toshiki
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Crystal engineering
- Research Institution
  Waseda University
Research on hexagonal boron nitride semiconductors
- Principal Investigator
  
  KOBAYASHI Yasuyuki
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  NTT Basic Research Laboratories

All 2023 2022 2021 2020 2019 2015 2008 2007

All Journal Article Presentation

[Journal Article] Recombination mechanism of heavily Be-doped GaAsN by time-resolved photoluminescence2023
- Author(s)
  Takashi Tsukasaki, Hisashi Sumikura, Takuma Fujimoto, Miki Fujita, and Toshiki Makimoto
- Journal Title
  
  Journal of Vacuum Science & Technology A
  
  Volume: 41 Issue: 5 Pages: 052702-052702
- DOI
  10.1116/6.0002522
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05295
[Journal Article] Electrical properties of heavily Si-doped GaAsN after annealing2022
- Author(s)
  Tsukasaki Takashi、Mochida Naoki、Fujita Miki、Makimoto Toshiki
- Journal Title
  
  Physica B: Condensed Matter
  
  Volume: 625 Pages: 413482-413482
- DOI
  10.1016/j.physb.2021.413482
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K05295
[Journal Article] Photoluminescence Mechanism in Heavily Si-Doped GaAsN2021
- Author(s)
  Takashi Tsukasaki, Ren Hiyoshi, Miki Fujita, and Toshiki Makimoto
- Journal Title
  
  Crystal Research Technology
  
  Volume: 56 Issue: 3 Pages: 2000143-2000143
- DOI
  10.1002/crat.202000143
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K05295
[Journal Article] Hexagonal boron nitride grown by MOVPE2008
- Author(s)
  Y. Kobayashi, T. Akasaka, T. Makimoto
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 5048-5052
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Hexogonal boron nitride grown by MOVPE2008
- Author(s)
  Y. Kobayashi、T. Akasaka、T. Makimoto
- Journal Title
  
  Journal of Crystal Growth Vol.310
  
  Pages: 5048-5052
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Nonpolar A1BN(1120) and(1100) films grown on SiC substrates2007
- Author(s)
  T. Akasaka, Y. Kobayashi, T. Makimoto
- Journal Title
  
  Applied Physics Letters 91
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Ultraviolet luminescence from hexagonal boron nitride heteroepitaxial layers on Ni(111) grown by flow-rate modulation epitaxy2007
- Author(s)
  Y.Kobayashi, T.Nakamura, T.Akasaka, T.Makimoto, N.Matsumoto
- Journal Title
  
  Physica Status Solidi (b) 244
  
  Pages: 1789-1792
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Nonpolar AlBN (1120) and (1100) films grown on SiC substrate2007
- Author(s)
  T. Akasaka、Y. Kobayashi、T. Makimoto
- Journal Title
  
  Applied Physics Letters Vol.91
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Ultraviolet luminescence from hexagonal boron nitride heteroepitaxial layers on Ni(111)grown by flow-rate modulation epitaxy2007
- Author(s)
  Y. Kobayashi, T. Nakamura, T. Akasaka, T. Makimoto, N. Matsumoto
- Journal Title
  
  Physica Status Solidi(b) Vol.244
  
  Pages: 1789-1792
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Boron Nitride Thin Films Grown on Graphitized <6H-SiC> Substrates by Metalorganic Vapor Phase Epitaxy2007
- Author(s)
  Y.Kobayashi, H.Hibino, T.Nakamura, T.Akasaka, T.Makimoto, N.Matsumoto
- Journal Title
  
  Japanese Journal of Applied Physics 46
  
  Pages: 2554-2557
- NAID
  210000062433
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Boron Nitride Thin Films Grown on Graphitized 6H-SiC Substrates by Metalorganic Vapor phase Epitaxy2007
- Author(s)
  Y. Kobayashi, H. Hibino, T. Nakamura, T. Akasaka, T. Makimoto, N. Matsumoto
- Journal Title
  
  Japanese Jounal of Applied Physics Vol.46
  
  Pages: 2554-2557
- NAID
  210000062433
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] BGaN micro-islands as novel buffers for growth of high-quality GaN on sapphire2007
- Author(s)
  T.Akasaka, Y.Kobayashi, T.Makimoto
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 320-324
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] BGaN micro-islands as novel buffers fro growth of high quality GaN on sapphire2007
- Author(s)
  T. Akasaka、Y. Kobayashi、T. Makimoto
- Journal Title
  
  Journal of Crystal Growth Vol.298
  
  Pages: 320-324
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Ultraviolet luminescence from hexagonal boron nitride heteroepitaxial layers on Ni(111) grown by flow-rate modulation epitaxy2007
- Author(s)
  Y. Kobayashi、T. Nakamura、T. Akasaka、T. Makimoto、N. Matsumoto
- Journal Title
  
  Physica Status Solidi(b) Vol.244
  
  Pages: 1789-1792
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Journal Article] Nonpolar AlBN(1120)and(1100)films grown on SiC substrates2007
- Author(s)
  T. Akasaka, Y. Kobayashi, T. Makimoto
- Journal Title
  
  Applied Physics Letters Vol.91
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] RF-MBE 法て成長した AlGaAsN のフォトルミネッセンス発光2023
- Author(s)
  南奈津、井上洸、塚崎貴司、藤田美樹、牧本俊樹
- Organizer
  第84回秋季応用物理学会講演会　22p-P10-15　(2023年9月)
- Data Source
  KAKENHI-PROJECT-19K05295
[Presentation] High Thermal Coefficient Resistance for Heavily Si-doped GaAsN after Annealing2023
- Author(s)
  Takashi Tsukasaki, Hirokazu Sasaki, Miki Fujita, Toshiki Makimoto
- Organizer
  14th International Conference on Nitride Semiconductors (ICNS14), MoP-CH-22, Fukuoka (November 2023).
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05295
[Presentation] フォトルミネッセンス特性を用いたSiドープGaAsNにおける有効質量の評価2022
- Author(s)
  南奈津、塚崎貴司、藤田実樹、牧本俊樹
- Organizer
  第83回秋季応用物理学会講演会
- Data Source
  KAKENHI-PROJECT-19K05295
[Presentation] Slow Photoluminescence Lifetime of Heavily Be-doped GaAsN2022
- Author(s)
  T. Tsukasaki, H. Sumikura; T. Fujimoto; M. Fujita, and T. Makimoto
- Organizer
  36th North American Conference on Molecular Beam Epitaxy (NAMBE 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05295
[Presentation] X線逆格子マッピングによる不純物ドープGaAsNの評価2022
- Author(s)
  井上洸、角田拓優、塚崎貴司、藤田実樹、牧本俊樹
- Organizer
  第83回秋季応用物理学会講演会
- Data Source
  KAKENHI-PROJECT-19K05295
[Presentation] 光伝導測定によるSi-GaAsNの評価2021
- Author(s)
  山田唯人、塚崎貴司、清水光一郎、牧本俊樹
- Organizer
  第82回秋季応用物理学会講演会
- Data Source
  KAKENHI-PROJECT-19K05295
[Presentation] 高濃度BeドープGaAsNにおけるBe-N形成2020
- Author(s)
  角田拓優、塚崎貴司、椎野直樹、藤田実樹、牧本俊樹
- Organizer
  第81回秋季応用物理学会講演会　9p-Z01-1　(2020年9月)
- Data Source
  KAKENHI-PROJECT-19K05295
[Presentation] RF-MBE法で成長したGaAsNにおけるEgのN組成依存性2020
- Author(s)
  藤森郁男、塚崎貴司、藤田実樹、牧本俊樹
- Organizer
  第67回応用物理学会春季学術講演会　 13p-PA5-2
- Data Source
  KAKENHI-PROJECT-19K05295
[Presentation] 高濃度BeドープGaAsNのフォトルミネッセンス特性2020
- Author(s)
  藤本卓雅、塚崎貴司、椎野直樹、藤田実樹、牧本俊樹
- Organizer
  第81回秋季応用物理学会講演会　9p-Z01-2　(2020年9月)
- Data Source
  KAKENHI-PROJECT-19K05295
[Presentation] PL測定を用いたアンドープGaAsNにおける局在準位の評価2019
- Author(s)
  大竹浩二朗、清水光一郎、塚崎貴司、藤田実樹、牧本俊樹
- Organizer
  第80回秋季応用物理学会講演会　19a-PB5-2
- Data Source
  KAKENHI-PROJECT-19K05295
[Presentation] RF-MBE法によるエピタキシャルグラフェン上へのAlN成長2015
- Author(s)
  山崎隆弘、畑泰希、山根悠介、関根佳明、前田文彦、日比野浩樹、藤田実樹、牧本俊樹
- Organizer
  第76回秋季応用物理学会講演会　14p-PB12-15　(2015年9月).
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-14
- Data Source
  KAKENHI-PROJECT-26600088
[Presentation] Nonpolar AlBN (1120) and (1100) films grown on SiC substrates2007
- Author(s)
  T. Akasaka、Y. Kobayashi、T. Makimoto
- Organizer
  7th International Conference of Nitride semiconductors
- Place of Presentation
  アメリカ、ラスベガス
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] Nonpolar A1BN(1120) and(1100) films grown on SiC substrates2007
- Author(s)
  T. Akasaka, Y. Kobayashi, T. Makimoto
- Organizer
  7th International Conference of Nitride Semiconductors
- Place of Presentation
  アメリカ、ラスベガス
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] In-situ monitoring of hexagonal BN flow-rate modulation epitaxy by shallow-angle reflectance using ultraviolet light2007
- Author(s)
  Y. Kobayashi, M. Miyamoto, T. Akasaka, T. Makimoto, N. Matsumoto
- Organizer
  The 15th International Conference on Crystal Growth
- Place of Presentation
  アメリカ,ソルトレイクシティ
- Data Source
  KAKENHI-PROJECT-18206004
[Presentation] In-situ monitoring of hexagonal BN flow-rate modulation epitaxy by shallow-angle reflectance using ultraviolet light2007
- Author(s)
  Y. Kobayashi、T. Miyamoto、T. Akasaka、T. Makimoto、N. Matsumoto
- Organizer
  The 15th International Conference on Crystal Growth
- Place of Presentation
  アメリカ、ソルトレイク
- Data Source
  KAKENHI-PROJECT-18206004

1. KOBAYASHI Yasuyuki (90393727)

# of Collaborated Projects: 1 results

# of Collaborated Products: 16 results
2. AKASAKA Tetsuya (90393735)

# of Collaborated Projects: 1 results

# of Collaborated Products: 16 results
3. NISHIKAWA Atsushi (60417095)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. NAKANO Hidetoshi (90393793)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. GOTOH Hideki (10393795)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. TAWARA Takehiko (40393798)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. SANADA Haruki (50417094)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 堀越佳治 (60287985)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 藤田実樹 (60386729)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
10. 日比野浩樹 (60393740)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
11. 前田文彦 (70393741)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
12. 関根佳明 (70393783)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results

Makimoto Toshiki 牧本 俊樹

牧本 俊樹 マキモト トシキ

MAKIMOTO Toshiki 牧本 俊樹

Research Projects

Research Products

Co-Researchers

Research on growth of high-quality GaAs-based superlattices and stable excitonsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Growth of BN on graphene by RF-MBEPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Research on hexagonal boron nitride semiconductors

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Recombination mechanism of heavily Be-doped GaAsN by time-resolved photoluminescence2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Electrical properties of heavily Si-doped GaAsN after annealing2022

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Photoluminescence Mechanism in Heavily Si-Doped GaAsN2021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Hexagonal boron nitride grown by MOVPE2008

Author(s)

Journal Title

Data Source

[Journal Article] Hexogonal boron nitride grown by MOVPE2008

Author(s)

Journal Title

Data Source

[Journal Article] Nonpolar A1BN(1120) and(1100) films grown on SiC substrates2007

Author(s)

Journal Title

Data Source

[Journal Article] Ultraviolet luminescence from hexagonal boron nitride heteroepitaxial layers on Ni(111) grown by flow-rate modulation epitaxy2007

Author(s)

Journal Title

Data Source

[Journal Article] Nonpolar AlBN (1120) and (1100) films grown on SiC substrate2007

Author(s)

Journal Title

Data Source

[Journal Article] Ultraviolet luminescence from hexagonal boron nitride heteroepitaxial layers on Ni(111)grown by flow-rate modulation epitaxy2007

Author(s)

Journal Title

Data Source

[Journal Article] Boron Nitride Thin Films Grown on Graphitized <6H-SiC> Substrates by Metalorganic Vapor Phase Epitaxy2007

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Boron Nitride Thin Films Grown on Graphitized 6H-SiC Substrates by Metalorganic Vapor phase Epitaxy2007

Author(s)

Journal Title

NAID

Data Source

[Journal Article] BGaN micro-islands as novel buffers for growth of high-quality GaN on sapphire2007

Author(s)

Journal Title

Data Source

[Journal Article] BGaN micro-islands as novel buffers fro growth of high quality GaN on sapphire2007

Author(s)

Journal Title

Makimoto Toshiki 牧本俊樹

牧本俊樹マキモトトシキ

MAKIMOTO Toshiki 牧本俊樹