IWAMURO NORIYUKI 岩室憲幸

… Alternative Names

岩室憲幸イワムロノリユキ

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Researcher Number	50581203
Other IDs	https://orcid.org/0000-0002-5027-4718
Affiliation (Current)	2025: 筑波大学, 数理物質系, 教授
Affiliation (based on the past Project Information) *help	2021 – 2024: 筑波大学, 数理物質系, 教授 2016 – 2019: 筑波大学, 数理物質系, 教授
Review Section/Research Field	Principal Investigator Basic Section 21010:Power engineering-related Except Principal Investigator Basic Section 21060:Electron device and electronic equipment-related / Electronic materials/Electric materials
Keywords	Principal Investigator SiC/SiO2界面 / 引っ張り応力、せん断応力 / アルミ電極と銅電極 / TCADシミュレーション / 電気－熱－応力連成解析 / 負荷短絡破壊 / ゲートもれ電流 / SiCMOS結晶面 / ゲート底部電界保護層 / NIT密度 … More / Jd-Vgs特性 / 負荷短絡試験 / SiC-MOSFET / 残留ダメージ / 機械応力 / 負荷短絡 / 高信頼性特性 / SiC MOSFET … More Except Principal Investigator 超接合 / しきい値電圧変動 / MOSFET / 超接合MOSFET / 相補型インバータ / SiC / MOS界面 / 電子・電気材料 / pMOS / ｐ型ＭＯＳ / パワーデバイス / 炭化ケイ素 Less

Development of one-chip complementary inverters using SiC lateral super-junction power MOSFETs
- Principal Investigator
  
  矢野裕司
- Project Period (FY)
  2022 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  University of Tsukuba
Study on the effect of residual damage on reliabilities in short-circuited SiC MOSFETsPrincipal Investigator
- Principal Investigator
  
  岩室憲幸
- Project Period (FY)
  2021 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21010:Power engineering-related
- Research Institution
  University of Tsukuba
Fundamental research and development of low-loss p-type SiC superjunction power MOSFETs
- Principal Investigator
  
  Yano Hiroshi
- Project Period (FY)
  2016 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  University of Tsukuba

All 2024 2023 2022 2020 2019 2018 2017 2016

All Journal Article Presentation

[Journal Article] Conduction mechanisms of oxide leakage current in p-channel 4H-SiC MOSFETs2020
- Author(s)
  Nemoto Hiroki、Okamoto Dai、Zhang Xufang、Sometani Mitsuru、Okamoto Mitsuo、Hatakeyama Tetsuo、Harada Shinsuke、Iwamuro Noriyuki、Yano Hiroshi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: 4 Pages: 044003-044003
- DOI
  10.35848/1347-4065/ab7ddb
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04326
[Journal Article] Investigation of UIS Capability for -600V Class Vertical SiC p-channel MOSFET2019
- Author(s)
  Yao Kailun、Yano Hiroshi、Iwamuro Noriyuki
- Journal Title
  
  2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
  
  Volume: ー Pages: 187-190
- DOI
  10.1109/ispsd.2019.8757607
- Data Source
  KAKENHI-PROJECT-16H04326
[Journal Article] Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors2018
- Author(s)
  X. Zhang, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, N. Iwamuro, and H. Yano
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 57
- NAID
  210000149219
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04326
[Journal Article] Analysis of fast and slow responses in AC conductance curves for p-type SiC MOS capacitors2018
- Author(s)
  Y. Karamoto, X. Zhang, D. Okamoto, M. Sometani, T. Hatakeyama, S. Harada, N. Iwamuro, and H. Yano
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 57
- NAID
  210000149221
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04326
[Journal Article] Investigation of Robustness Capability of -730 V P-Channel Vertical SiC Power MOSFET for Complementary Inverter Applications2017
- Author(s)
  J. An, M. Namai, H. Yano, and N. Iwamuro
- Journal Title
  
  IEEE Trans. Electron Devices
  
  Volume: 64 Issue: 10 Pages: 4219-4225
- DOI
  10.1109/ted.2017.2742542
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04326
[Journal Article] Characterization of Near-Interface Traps at 4H-SiC Metal-Oxide-Semiconductor Interfaces Using a Modified Distributed Circuit Model2017
- Author(s)
  X. Zhang, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, R. Kosugi, N. Iwamuro, and H. Yano
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 10 Issue: 6 Pages: 064101-064101
- DOI
  10.7567/apex.10.064101
- NAID
  210000135889
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] 4H-SiC横型p-ch SJ-MOSFETのゲート－ドレイン間寄生容量特性解析2024
- Author(s)
  森海斗, 岩室憲幸, 矢野裕司
- Organizer
  電気学会全国大会
- Data Source
  KAKENHI-PROJECT-23K22810
[Presentation] Threshold voltage drift mechanism in SiC MOSFETs under AC gate stress2023
- Author(s)
  Yuya Enjoji, Noriyuki Iwamuro, and Hiroshi Yano
- Organizer
  International Conference on Silicon Carbide and Related Materials 2023 (ICSCRM 2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22810
[Presentation] 4H-SiC横型p-ch SJ-MOSFETのオン抵抗と寄生容量の関係評価2023
- Author(s)
  森海斗, 岩室憲幸, 矢野裕司
- Organizer
  先進パワー半導体分科会第10回講演会
- Data Source
  KAKENHI-PROJECT-23K22810
[Presentation] ACゲートストレスによるSiC MOSFETのしきい値電圧とサブスレッショルドスイングの変動評価2023
- Author(s)
  円城寺佑哉, 岩室憲幸, 矢野裕司
- Organizer
  先進パワー半導体分科会第10回講演会
- Data Source
  KAKENHI-PROJECT-23K22810
[Presentation] Investigations of Residual Damage in SiC Trench MOSFETs after Single and Multiple Short-Circuit Stress2023
- Author(s)
  Mitsuki Takahashi, Shinsuke Harada, Hiroshi Yano and Noriyuki Iwamuro
- Organizer
  The 35th International Symposium on Power Semiconductor Devices & ICs
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K20927
[Presentation] Trap distribution in 4H-SiC MOSFETs analyzed by a 3-level charge pumping technique2023
- Author(s)
  Atsuhiro Akiba, Noriyuki Iwamuro, and Hiroshi Yano
- Organizer
  International Conference on Silicon Carbide and Related Materials 2023 (ICSCRM 2023)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22810
[Presentation] モノリシック相補型インバータに向けた4H-SiC横型p-ch SJ-MOSFETの構造設計2022
- Author(s)
  森海斗, 岩室憲幸, 矢野裕司
- Organizer
  先進パワー半導体分科会第9回講演会
- Data Source
  KAKENHI-PROJECT-23K22810
[Presentation] ACゲートストレス印加によるSiC-MOSFETのしきい値電圧変動評価2022
- Author(s)
  円城寺佑哉, 岩室憲幸, 矢野裕司
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K22810
[Presentation] バイポーラACゲートストレス印加によるSiC-MOSFETのしきい値電圧変動評価2022
- Author(s)
  円城寺佑哉, 岩室憲幸, 矢野裕司
- Organizer
  先進パワー半導体分科会第9回講演会
- Data Source
  KAKENHI-PROJECT-23K22810
[Presentation] SiC pチャネルMOSFETの正孔輸送機構の解析2020
- Author(s)
  岡本大, 周星炎, 張旭芳, 染谷満, 岡本光央, 畠山哲夫, 原田信介, 岩室憲幸, 矢野裕司
- Organizer
  電子デバイス界面テクノロジー研究会　－材料・プロセス・デバイス特性の物理－第25回研究会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Different Behaviors of Interface Traps for p-type 4H-SiC MOS Capacitors with Wet and Nitrided Gate Oxides2019
- Author(s)
  Xufang Zhang, Dai Okamoto, Mitsuru Sometani, Shinsuke Harada, Noriyuki Iwamuro, Hiroshi Yano
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Interface Characterization of Nitrided a- and m-Face 4H-SiC MOS Structures Using Distributed Circuit Mode2019
- Author(s)
  X. Zhang, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, N. Iwamuro, and H. Yano
- Organizer
  電子デバイス界面テクノロジー研究会　－材料・プロセス・デバイス特性の物理－第24回研究会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Threshold Voltage Instability in p-channel 4H-SiC MOSFETs Investigated by Non-relaxation Method2019
- Author(s)
  Dai Okamoto, Hiroki Nemoto, Xufang Zhang, Xingyan Zhou, Mitsuru Sometani, Mitsuo Okamoto, Shinsuke Harada, Tetsuo Hatakeyama, Noriyuki Iwamuro, Hiroshi Yano
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Accurate Channel Mobility Extraction and Scattering Mechanisms in 4H-SiC p-Channel MOSFETs2019
- Author(s)
  Xingyan Zhou, Dai Okamoto, Xufang Zhang, Mitsuru Sometani, Mitsuo Okamoto, Shinsuke Harada, Noriyuki Iwamuro, Hirosi Yano
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Analysis of three-level charge pumping characteristics of 4H-SiC MOSFETs considering near-interface traps2019
- Author(s)
  Yuta Matsuya, Xufang Zhang, Dai Okamoto, Noriyuki Iwamuro, Hiroshi Yano
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Conduction mechanism of hole leakage current in 4H-SiC MOSFETs under high negative gate bias2019
- Author(s)
  Hiroki Nemoto, Dai Okamoto, Xufang Zhang, Mitsuru Sometani, Mitsuo Okamoto, Tetsuo Hatakeyama, Shinsuke Harada, Noriyuki Iwamuro, Hiroshi Yano
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] pチャネル4H-SiC MOSFETにおける酸化膜正孔リーク電流伝導機構の解析2019
- Author(s)
  根本宏樹, 岡本大, 張旭芳, 染谷満, 岡本光央, 畠山哲夫, 原田信介, 岩室憲幸, 矢野裕司
- Organizer
  先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] ｐチャネル4H-SiC MOSFETのチャネルドリフト移動度の導出と散乱機構の解明2019
- Author(s)
  周星炎, 岡本大, 張旭芳, 染谷満, 岡本光央, 畠山哲夫, 原田信介, 岩室憲幸, 矢野裕司
- Organizer
  先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] pチャネル4H-SiC MOSFETにおける酸化膜正孔リーク電流伝導機構の解析2019
- Author(s)
  根本宏樹, 岡本大, 張旭芳, 染谷満, 岡本光央, 畠山哲夫, 原田信介, 岩室憲幸, 矢野裕司
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] 高速緩和なし法によるpチャネル4H-SiC MOSFETのしきい値電圧変動評価2019
- Author(s)
  坂田大輝, 岡本大, 染谷満, 岡本光央, 原田信介, 畠山哲夫, 根本宏樹, 張旭芳, 岩室憲幸, 矢野裕司
- Organizer
  先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] 界面近傍酸化膜トラップを考慮した4H-SiC MOSFETの3レベルチャージポンピング特性の解析2019
- Author(s)
  松谷優汰, 張旭芳, 岡本大, 岩室憲幸, 矢野裕司
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] 界面近傍酸化膜トラップを考慮した4H-SiC MOSFETにおける3レベルチャージポンピング特性の解析2019
- Author(s)
  松谷優汰，張旭芳，岡本大，岩室憲幸，矢野裕司
- Organizer
  先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Investigation of UIS Capability for -600V Class Vertical SiC p-Channel MOSFET2019
- Author(s)
  K. Yao, H. Yano, N. Iwamuro
- Organizer
  The 31st International Symposium on Power Semiconductor Devices & ICs (ISPSD2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Investigation of Unclamped Inductive Switching Capability of Silicon Carbide MOSFETs2019
- Author(s)
  Kailun Yao, 矢野裕司, 岩室憲幸
- Organizer
  平成31年電気学会全国大会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Difference of NIT Density Distribution in 4H-SiC MOS Interfaces for Si- and C-faces2018
- Author(s)
  Xufang Zhang, Dai Okamoto, Tetsuo Hatakeyama, Mitsuru Sometani, Shinsuke Harada, Noriyuki Iwamuro, and Hiroshi Yano
- Organizer
  電子デバイス界面テクノロジー研究会　－材料・プロセス・デバイス特性の物理－　第23回研究会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Analysis of leakage current conduction mechanisms in thermally grown oxides on p-channel 4H-SiC MOSFETs2018
- Author(s)
  H. Nemoto, D. Okamoto, M. Sometani, Y. Kiuchi, T. Hatakeyama, S. Harada, N. Iwamuro, and H. Yano,
- Organizer
  12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Hall効果測定によるpチャネル4H-SiC MOSFETのチャネル輸送機構の解明2018
- Author(s)
  周星炎，岡本大，畠山哲夫，染谷満，原田信介，岡本光央，張旭芳，岩室憲幸，矢野裕司
- Organizer
  先進パワー半導体分科会第5回講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] pチャネル4H-SiC MOSFETにおける酸化膜リーク電流伝導機構の解析2018
- Author(s)
  根本宏樹，岡本大，染谷満，木内祐治，岡本光央，畠山哲夫，原田信介，岩室憲幸，矢野裕司
- Organizer
  先進パワー半導体分科会第5回講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] pチャネル4H-SiC MOSFETにおける酸化膜リーク電流伝導機構の解析2018
- Author(s)
  根本宏樹, 岡本大, 染谷満, 木内祐治, 畠山哲夫, 原田信介, 岩室憲幸, 矢野裕司
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Mobility limiting mechanisms in p-channel 4H-SiC MOSFETs investigated by Hall-effect measurements2018
- Author(s)
  X. Zhou, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, X. Zhang, N. Iwamuro, and H. Yano
- Organizer
  12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Impact of passivation treatments on channel mobility for p-channel 4H-SiC MOSFETs2018
- Author(s)
  X. Zhou, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, Y. Karamoto, X. Zhang, N. Iwamuro, and H. Yano
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] コンダクタンス法によるp型SiC MOS界面の高速及び低速応答準位の解析2017
- Author(s)
  唐本祐樹, 張旭芳, 岡本大, 染谷満, 畠山哲夫, 原田信介, 岩室憲幸, 矢野裕司
- Organizer
  先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Impact of Oxide Thickness on the Density Distribution of Near-interface Traps in 4H-SiC MOS Capacitors2017
- Author(s)
  X. Zhang, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, N. Iwamuro, and H. Yano
- Organizer
  2017 International Workshop on Dielectric Thin Films for Future Electron Devices - Science and Technology - (2017IWDTF)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] 4H-SiC MOS 界面におけるNIT 密度分布の膜厚依存性2017
- Author(s)
  Xufang Zhang, Dai Okamoto, Tetsuo Hatakeyama, Mitsuru Sometani, Shinsuke Harada, Noriyuki Iwamuro, and Hiroshi Yano
- Organizer
  先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] コンダクタンス法によるp型SiC MOSキャパシタ界面特性の解析2017
- Author(s)
  唐本祐樹, 張旭芳, 岡本大, 染谷満, 畠山哲夫, 原田信介, 岩室憲幸, 矢野裕司
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Verification of Modified Distributed Circuit Model for Near-Interface Traps in 4H-SiC MOS Interface2017
- Author(s)
  Xufang Zhang, Dai Okamoto, Tetsuo Hatakeyama, Mitsuru Sometani, Shinsuke Harada, Ryoji Kosugi, Noriyuki Iwamuro, and Hiroshi Yano
- Organizer
  電子デバイス界面テクノロジー研究会　－材料・プロセス・デバイス特性の物理－　第22回研究会
- Place of Presentation
  東レ研修センター（静岡県・三島市）
- Year and Date
  2017-01-20
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Analysis of Fast and Slow Responses of Interface Traps in p-type SiC MOS Capacitors by Conductance Method2017
- Author(s)
  Y. Karamoto, X.Zhang, D. Okamoto, M. Sometani, T. Hatakeyama, S. Harada, N. Iwamuro, and H. Yano
- Organizer
  2017 International Workshop on Dielectric Thin Films for Future Electron Devices - Science and Technology - (2017IWDTF)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Verification of density distribution of near-interface traps in 4H-SiC MOS capacitors with different oxide thicknesses2017
- Author(s)
  Xufang Zhang, Dai Okamoto, Tetsuo Hatakeyama, Mitsuru Sometani, Shinsuke Harada, Noriyuki Iwamuro, and Hiroshi Yano
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] 窒化したp 型SiC MOS キャパシタにおける反転層の形成2016
- Author(s)
  唐本祐樹, 岡本大, 原田信介, 染谷満, 畠山哲夫, 小杉亮治, 岩室憲幸, 矢野裕司
- Organizer
  先進パワー半導体分科会第3回講演会
- Place of Presentation
  つくば国際会議場（茨城県・つくば市）
- Year and Date
  2016-11-08
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] A Distributed Model for Near-Interface Traps in 4H-SiC MOS Capacitors2016
- Author(s)
  X. F. Zhang, D. Okamoto, T. Hatakeyama, M. Sometani, S. Harada, R. Kosugi, N. Iwamuro, and H. Yano
- Organizer
  47th IEEE Semiconductor interface Specialist Conference (SISC2016)
- Place of Presentation
  San Diego (USA)
- Year and Date
  2016-12-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] A Distributed Model for Near-Interface Traps in 4H-SiC MOS Capacitors2016
- Author(s)
  Xufang Zhang, Dai Okamoto, Tetsuo Hatakeyama, Mitsuru Sometani, Shinsuke Harada, Ryoji Kosugi, Noriyuki Iwamuro, and Hiroshi Yano
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] 窒化したp型SiC MOSキャパシタにおける反転層の形成2016
- Author(s)
  唐本祐樹, 岡本大, 原田信介, 染谷満, 畠山哲夫, 小杉亮治, 岩室憲幸, 矢野裕司
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] Quantitative estimation of near-interface traps with distributed circuit model for 4H-SiC MOS capacitors2016
- Author(s)
  Xufang Zhang, Dai Okamoto, Tetsuo Hatakeyama, Mitsuru Sometani, Shinsuke Harada, Ryoji Kosugi, Noriyuki Iwamuro, and Hiroshi Yano
- Organizer
  先進パワー半導体分科会第3回講演会
- Place of Presentation
  つくば国際会議場（茨城県・つくば市）
- Year and Date
  2016-11-08
- Data Source
  KAKENHI-PROJECT-16H04326
[Presentation] 直列抵抗を考慮したインピーダンス測定によるSiC MOS界面解析2016
- Author(s)
  岡本大, 張旭芳, 畠山哲夫, 染谷満, 原田信介, 小杉亮治, 岩室憲幸, 矢野裕司
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16H04326

1. Yano Hiroshi (40335485)

# of Collaborated Projects: 3 results

# of Collaborated Products: 50 results
2. 岡本大 (50612181)

# of Collaborated Projects: 1 results

# of Collaborated Products: 37 results
3. 原田信介 (20392649)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results

IWAMURO NORIYUKI 岩室 憲幸

岩室 憲幸 イワムロ ノリユキ

Research Projects

Research Products

Co-Researchers

Development of one-chip complementary inverters using SiC lateral super-junction power MOSFETs

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Study on the effect of residual damage on reliabilities in short-circuited SiC MOSFETsPrincipal Investigator

Principal Investigator

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Review Section

Research Institution

Fundamental research and development of low-loss p-type SiC superjunction power MOSFETs

Principal Investigator

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Research Institution

[Journal Article] Conduction mechanisms of oxide leakage current in p-channel 4H-SiC MOSFETs2020

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DOI

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[Journal Article] Investigation of UIS Capability for -600V Class Vertical SiC p-channel MOSFET2019

Author(s)

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DOI

Data Source

[Journal Article] Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors2018

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NAID

Data Source

[Journal Article] Analysis of fast and slow responses in AC conductance curves for p-type SiC MOS capacitors2018

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NAID

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[Journal Article] Investigation of Robustness Capability of -730 V P-Channel Vertical SiC Power MOSFET for Complementary Inverter Applications2017

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DOI

Data Source

[Journal Article] Characterization of Near-Interface Traps at 4H-SiC Metal-Oxide-Semiconductor Interfaces Using a Modified Distributed Circuit Model2017

Author(s)

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DOI

NAID

Data Source

[Presentation] 4H-SiC横型p-ch SJ-MOSFETのゲート－ドレイン間寄生容量特性解析2024

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[Presentation] Threshold voltage drift mechanism in SiC MOSFETs under AC gate stress2023

Author(s)

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[Presentation] 4H-SiC横型p-ch SJ-MOSFETのオン抵抗と寄生容量の関係評価2023

Author(s)

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[Presentation] ACゲートストレスによるSiC MOSFETのしきい値電圧とサブスレッショルドスイングの変動評価2023

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[Presentation] Investigations of Residual Damage in SiC Trench MOSFETs after Single and Multiple Short-Circuit Stress2023

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[Presentation] Trap distribution in 4H-SiC MOSFETs analyzed by a 3-level charge pumping technique2023

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Data Source

[Presentation] モノリシック相補型インバータに向けた4H-SiC横型p-ch SJ-MOSFETの構造設計2022

Author(s)

IWAMURO NORIYUKI 岩室憲幸

岩室憲幸イワムロノリユキ