TAOKA NORIYUKI 田岡紀之

… Alternative Names

田岡紀之タオカノリユキ

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Researcher Number	50626009
Other IDs
Affiliation (Current)	2025: 愛知工業大学, 工学部, 教授
Affiliation (based on the past Project Information) *help	2023 – 2024: 愛知工業大学, 工学部, 教授 2020 – 2022: 名古屋大学, 工学研究科, 特任准教授 2013: 名古屋大学, 工学(系)研究科(研究院), 准教授 2012: 名古屋大学, 工学(系)研究科(研究院), 特任准教授
Review Section/Research Field	Principal Investigator Thin film/Surface and interfacial physical properties Except Principal Investigator Basic Section 21050:Electric and electronic materials-related / Medium-sized Section 29:Applied condensed matter physics and related fields
Keywords	Principal Investigator MOS界面 / コンダクタンスカーブ / 遅い準位 / 界面準位 / SiC Except Principal Investigator ゲルマニウム / 電子状態 / 偏析 / 極薄結晶 / シリコン … More / シリコン酸化膜 / ゲルマネン / 表面偏析 / 電子物性 / 共晶反応 / 拡散・偏析 / 化学構造 / 二次元結晶 Less

ゲルマニウム二次元結晶のヘテロ構造形成と電子物性制御
- Principal Investigator
  
  大田晃生
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Fukuoka University
  Nagoya University
Formation of Ge two-dimensional crystals embedded into Si oxide and its device application
- Principal Investigator
  
  Ohta Akio
- Project Period (FY)
  2020 – 2021
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 29:Applied condensed matter physics and related fields
- Research Institution
  Nagoya University
低エネルギー損失に向けた炭化ケイ素トランジスタの絶縁膜／炭化ケイ素界面の高品質化Principal Investigator
- Principal Investigator
  
  田岡紀之
- Project Period (FY)
  2012 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Nagoya University

All 2024 2023 2022 2021 2020 2014 2013

All Journal Article Presentation

[Journal Article] Layer transfer of ultrathin Ge crystal segregated on Al/Ge(111) structure2023
- Author(s)
  Matsushita Keigo、Ohta Akio、Shibayama Shigehisa、Tokunaga Tomoharu、Taoka Noriyuki、Makihara Katsunori、Miyazaki Seiichi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: SG Pages: SG1007-SG1007
- DOI
  10.35848/1347-4065/acb65c
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K22794, KAKENHI-PROJECT-21H04559
[Journal Article] Evaluation of Chemical Structure and Si Segregation of Al/Si(111)2022
- Author(s)
  T. Sakai, A. Ohta, K. Matsushita, N. Taoka, K. Makihara, and S. Miyazaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 62 Issue: SC Pages: SC1059-SC1059
- DOI
  10.35848/1347-4065/acb1fd
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18KK0409, KAKENHI-PROJECT-19H00762, KAKENHI-PROJECT-21H04559, KAKENHI-PROJECT-23K22794
[Journal Article] Segregation control for ultrathin Ge layer in Al/Ge(111) system2021
- Author(s)
  Ohta Akio、Kobayashi Masato、Taoka Noriyuki、Ikeda Mistuhisa、Makihara Katsunori、Miyazaki Seiichi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: SA Pages: SA1014-SA1014
- DOI
  10.35848/1347-4065/ac19ff
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K21142
[Journal Article] Surface flattening and Ge crystalline segregation of Ag/Ge structure by thermal anneal2021
- Author(s)
  Ohta Akio、Yamada Kenzo、Sugawa Hibiki、Taoka Noriyuki、Ikeda Mitsuhisa、Makihara Katsunori、Miyazaki Seiichi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: SB Pages: SBBK05-SBBK05
- DOI
  10.35848/1347-4065/abdad0
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K21142, KAKENHI-PROJECT-19H00762, KAKENHI-PROJECT-21H04559
[Journal Article] Al2O3/SiC MOS構造における伝導帯端近傍の電気特性2014
- Author(s)
  田岡紀之, 坂下満男, 中塚理, 財満鎭明
- Journal Title
  
  第19回ゲートスタック研究会　―材料・プロセス・評価の物理―研究報告
  
  Volume: -
- Data Source
  KAKENHI-PROJECT-24560023
[Presentation] Al/SiGe(111)/Si(111)構造の化学構造分析 -熱処理によるSiおよびGe偏析-2024
- Author(s)
  酒井大希、大田晃生、田岡紀之、牧原克典、山本裕司、宮﨑誠一
- Organizer
  電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―（第29回）
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] Evaluation of Si and Ge Segregation from Si0.2Ge0.8(111) through Al and Ag Layer2023
- Author(s)
  Taiki Sakai, Akio Ohta, Noriyuki Taoka, Junji Yuhara, Katsunori Makihara, Yuji Yamamoto, Wei-chen Wen, Seiichi Miyazaki
- Organizer
  2023 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] Ultrathin Si Segregated Layer Formation on Al/Si(111)2023
- Author(s)
  T. Sakai, A. Ohta, K. Matsushita, N. Taoka, K. Makihara, and S. Miyazaki
- Organizer
  13th International Workshop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] Al/Si0.2Ge0.8(111)上への熱処理によるSiおよびGeの表面偏析制御2023
- Author(s)
  酒井大希、大田晃生、田岡紀之、牧原克典、山本裕司、宮﨑誠一
- Organizer
  第10回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] Al/Ge(111)上に偏析したGe薄膜の化学結合状態分析2022
- Author(s)
  松下圭吾、大田晃生、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  2022年度名古屋大学シンクロトロン光研究センターシンポジウム
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] Layer Transfer of Ultrathin Ge Layer Segregated on Al/Ge(111)2022
- Author(s)
  K. Matsushita, A. Ohta, N. Taoka, K. Makihara, S. Miyazaki
- Organizer
  35th International Microprocesses and Nanotechnology Conference (MNC 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] 熱処理によるAl(111)上のSi表面偏析制御2022
- Author(s)
  酒井大希、松下圭吾、大田晃生、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  第9回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] Al/Si(111)構造の平坦性および結晶性制御と偏析による極薄Si層形成2022
- Author(s)
  酒井大希、大田晃生、松下圭吾、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理― （第28回）
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] Al/Si0.2Ge0.8(111)構造の熱処理によるSiおよびGeの表面偏析2022
- Author(s)
  酒井大希、松下圭吾、大田晃生、田岡紀之、牧原克典、山本裕司、宮﨑誠一
- Organizer
  2023年第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] 共晶系の偏析により形成した極薄Ge結晶のデバイスプロセスの検討2022
- Author(s)
  松下圭吾、大田晃生、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理― （第28回）
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] Surface Modification and Wafer Bonding of Ultrathin Ge Segregated Layer formed on Al/Ge(111)2022
- Author(s)
  K. Matsushita, A. Ohta, N. Taoka, K. Makihara, and S. Miyazaki
- Organizer
  9th International Symposium on Control of Semiconductor Interfaces (ISCSI-9)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] Al/Ge(111)構造上に偏析した極薄Ge結晶層の転写2022
- Author(s)
  松下圭吾、大田晃生、柴山茂久、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  2022年第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] Evaluation of Chemical Structure and Si Segregation of Al/Si(111)2022
- Author(s)
  T. Sakai, A. Ohta, K. Matsushita, N. Taoka, K. Makihara, and S. Miyazaki
- Organizer
  2022 International Conference on Solid State Devices and Materials (SSDM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] Si(111)上のAl(111)薄膜形成と熱処理によるSi原子の表面偏析制御2022
- Author(s)
  酒井大希、松下圭吾、大田晃生、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  電気通信情報学会(SDM) [シリコン材料・デバイス] シリコンテクノロジー分科会 6月度合同研究会
- Data Source
  KAKENHI-PROJECT-23K22794
[Presentation] Control of Ultrathin Segregated Ge Layer Thickness on Al/Ge(111) Structure2021
- Author(s)
  A. Ohta, M. Kobayashi, N. Taoka, M. Ikeda, K. Makihara, and S. Miyazaki
- Organizer
  13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K21142
[Presentation] Ag/Ge 構造の表面偏析制御と平坦化による極薄Ge 結晶形成2021
- Author(s)
  大田晃生、山田憲蔵、須川響、田岡紀之、池田弥央、牧原克典、宮﨑誠一
- Organizer
  電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理― （第26回）
- Data Source
  KAKENHI-PROJECT-20K21142
[Presentation] 熱処理によるAlおよびAg/Ge(111)上の極薄Ge形成と層厚制御2021
- Author(s)
  大田晃生、松下圭吾、田岡紀之、牧原克典、宮﨑誠一
- Organizer
  電気通信情報学会(SDM) [シリコン材料・デバイス] シリコンテクノロジー分科会 6月度合同研究会
- Data Source
  KAKENHI-PROJECT-20K21142
[Presentation] Growth of Ultrathin Ge Crystal Layer by Surface Segregation and Flattening of Ag/Ge Structure2020
- Author(s)
  A. Ohta, K. Yamada, H. Sugawa, N. Taoka, M. Ikeda, K. Makihara, S. Miyazaki
- Organizer
  2020 International Conference on Solid State Devices and Materials (SSDM2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K21142
[Presentation] Al2O3/SiC MOS構造における伝導帯端近傍の電気特性2014
- Author(s)
  田岡紀之, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第19回ゲートスタック研究会　―材料・プロセス・評価の物理―
- Place of Presentation
  静岡県
- Data Source
  KAKENHI-PROJECT-24560023
[Presentation] Al2O3/SiC MOS界面における伝導帯端近傍の界面特性2013
- Author(s)
  田岡紀之
- Organizer
  2013年春季第60回応用物理学会学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24560023

1. Ohta Akio (10553620)

# of Collaborated Projects: 2 results

# of Collaborated Products: 21 results
2. 牧原克典 (90553561)

# of Collaborated Projects: 2 results

# of Collaborated Products: 22 results
3. 洗平昌晃 (20537427)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. 柚原淳司 (10273294)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results

TAOKA NORIYUKI 田岡 紀之

田岡 紀之 タオカ ノリユキ

Research Projects

Research Products

Co-Researchers

ゲルマニウム二次元結晶のヘテロ構造形成と電子物性制御

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Formation of Ge two-dimensional crystals embedded into Si oxide and its device application

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

低エネルギー損失に向けた炭化ケイ素トランジスタの絶縁膜／炭化ケイ素界面の高品質化Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Layer transfer of ultrathin Ge crystal segregated on Al/Ge(111) structure2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Evaluation of Chemical Structure and Si Segregation of Al/Si(111)2022

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Segregation control for ultrathin Ge layer in Al/Ge(111) system2021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Surface flattening and Ge crystalline segregation of Ag/Ge structure by thermal anneal2021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Al2O3/SiC MOS構造における伝導帯端近傍の電気特性2014

Author(s)

Journal Title

Data Source

[Presentation] Al/SiGe(111)/Si(111)構造の化学構造分析 -熱処理によるSiおよびGe偏析-2024

Author(s)

Organizer

Data Source

[Presentation] Evaluation of Si and Ge Segregation from Si0.2Ge0.8(111) through Al and Ag Layer2023

Author(s)

Organizer

Data Source

[Presentation] Ultrathin Si Segregated Layer Formation on Al/Si(111)2023

Author(s)

Organizer

Data Source

[Presentation] Al/Si0.2Ge0.8(111)上への熱処理によるSiおよびGeの表面偏析制御2023

Author(s)

Organizer

Data Source

[Presentation] Al/Ge(111)上に偏析したGe薄膜の化学結合状態分析2022

Author(s)

Organizer

Data Source

[Presentation] Layer Transfer of Ultrathin Ge Layer Segregated on Al/Ge(111)2022

Author(s)

Organizer

Data Source

[Presentation] 熱処理によるAl(111)上のSi表面偏析制御2022

Author(s)

Organizer

Data Source

[Presentation] Al/Si(111)構造の平坦性および結晶性制御と偏析による極薄Si層形成2022

Author(s)

Organizer

Data Source

[Presentation] Al/Si0.2Ge0.8(111)構造の熱処理によるSiおよびGeの表面偏析2022

TAOKA NORIYUKI 田岡紀之

田岡紀之タオカノリユキ