kaneko kentaro 金子健太郎

… Alternative Names

Kaneko Kentaro 金子健太郎

KANEKO KENTARO 金子健太郎

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Researcher Number	50643061
Other IDs
Affiliation (Current)	2025: 立命館大学, 総合科学技術研究機構, 教授
Affiliation (based on the past Project Information) *help	2022 – 2023: 立命館大学, 総合科学技術研究機構, 教授 2018 – 2021: 京都大学, 工学研究科, 講師 2016: 京都大学, 工学研究科, 助教 2015: 京都大学, 工学(系)研究科(研究院), 助教
Review Section/Research Field	Principal Investigator Basic Section 29020:Thin film/surface and interfacial physical properties-related / Medium-sized Section 29:Applied condensed matter physics and related fields / Crystal engineering Except Principal Investigator Crystal engineering
Keywords	Principal Investigator 結晶成長 / 酸化物 / 超ワイドバンドギャップ / 準安定相 / 酸化ガリウム / p型酸化物 / 混晶 / コーティング / CVD / ポリマー … More / 抗血栓 / 抗血栓材料 / マグネタイト / 生体吸収ステント / 留置型ステント / バッファ層 / 抗血栓作用 / pn接合 / パワーデバイス / 超ワイドギャップ半導体 / ミストCVD法 / 薄膜 / UWBG / パワー半導体 / 二酸化ゲルマニウム / 半導体 / コランダム構造 / ミストCVD / 新規半導体 / コランダム / 酸化イリジウム / 超ワイドギャップ / ドーピング / バンドギャップ変調 / 結晶薄膜 / 導電性 / 薄膜作製 / 酸化鉄 / 光触媒 / 化学気相成長法 / 可視光応答型光触媒 / 酸化物半導体 … More Except Principal Investigator 酸化ガリウム / 酸化スズ / 酸化還元反応 / 伝導性制御 / 酸化物半導体 Less

Creation of ultra-wide bandgap p-type transition metal oxides and device applicationsPrincipal Investigator
- Principal Investigator
  
  Kaneko Kentaro
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 29020:Thin film/surface and interfacial physical properties-related
- Research Institution
  Ritsumeikan University
  Kyoto University
Research on adding functions to medical parts applying to the heart by using semiconductor manufacturing technologyPrincipal Investigator
- Principal Investigator
  
  Kaneko Kentaro
- Project Period (FY)
  2021 – 2022
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 29:Applied condensed matter physics and related fields
- Research Institution
  Ritsumeikan University
  Kyoto University
Study on corundum-structured ultra-wide band gap oxides with p-type conductivityPrincipal Investigator
- Principal Investigator
  
  Kaneko Kentaro
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 29020:Thin film/surface and interfacial physical properties-related
- Research Institution
  Kyoto University
Development of novel photocatalyst consisting with low-cost and abundant materialsPrincipal Investigator
- Principal Investigator
  
  KANEKO KENTARO
- Project Period (FY)
  2015 – 2016
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Crystal engineering
- Research Institution
  Kyoto University
Conductivity control of oxide semiconductors with reduction-reactions introduced to control oxidation processes
- Principal Investigator
  
  Fujita Shizuo
- Project Period (FY)
  2015 – 2016
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Crystal engineering
- Research Institution
  Kyoto University

All 2024 2023 2022 2021 2020 2019 2018 2017 2016

All Journal Article Presentation Patent

[Journal Article] Rutile-type Ge Sn1-xO2 alloy layers lattice-matched to TiO2 substrates for device applications2024
- Author(s)
  Takane Hitoshi、Oshima Takayoshi、Harada Takayuki、Kaneko Kentaro、Tanaka Katsuhisa
- Journal Title
  
  Applied Physics Express
  
  Volume: 17 Issue: 1 Pages: 011008-011008
- DOI
  10.35848/1882-0786/ad15f3
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21H01811
[Journal Article] Band-gap engineering of rutile-structured SnO2-GeO2-SiO2 alloy system2022
- Author(s)
  Takane Hitoshi、Ota Yuichi、Wakamatsu Takeru、Araki Tsutomu、Tanaka Katsuhisa、Kaneko Kentaro
- Journal Title
  
  Physical Review Materials
  
  Volume: 6 Issue: 8
- DOI
  10.1103/physrevmaterials.6.084604
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21H01811
[Journal Article] Establishment of a growth route of crystallized rutile GeO2 thin film (≧1 μm/h) and its structural properties2021
- Author(s)
 Takane Hitoshi、Kaneko Kentaro
- Journal Title
 
 Applied Physics Letters
 
 Volume: 119 Issue: 6 Pages: 062104-062104
- DOI
 10.1063/5.0060785
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-21H01811
[Patent] 導電性部材2017
- Inventor(s)
  藤田静雄, 金子健太郎, 田中孝, 人羅俊実他2名
- Industrial Property Rights Holder
  京都大学, アイテック(株), (株)FLOSFIA
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2017-089170
- Filing Date
  2017-04-28
- Data Source
  KAKENHI-PROJECT-15K13350
[Patent] 導電性部材の製造方法2017
- Inventor(s)
  藤田静雄, 金子健太郎, 田中孝, 人羅俊実他2名
- Industrial Property Rights Holder
  京都大学, アイテック(株), (株)FLOSFIA
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2017-089171
- Filing Date
  2017-04-28
- Data Source
  KAKENHI-PROJECT-15K13350
[Patent] 燃料電池用セパレータ及びその製造方法2016
- Inventor(s)
  藤田静雄, 高木良輔, 金子健太郎, 田中孝, 人羅俊実
- Industrial Property Rights Holder
  京都大学, アイテック(株), (株)FLOSFIA
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-088907
- Filing Date
  2016-04-27
- Data Source
  KAKENHI-PROJECT-15K13350
[Presentation] Strategy for applying GeO2 to power semiconductors2024
- Author(s)
  Kaneko Kentaro
- Organizer
  SPIE Photonics West
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01811
[Presentation] Germanium dioxide (GeO2) as a new power device material2023
- Author(s)
  Kaneko Kentaro
- Organizer
  The 6th International Workshop on Ultraviolet Materials and Devices
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01811
[Presentation] New material for power device : GeO22023
- Author(s)
  Kaneko Kentaro
- Organizer
  European Materials Research Society Fall Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01811
[Presentation] Emerging UWBG material: GeO22023
- Author(s)
  Kaneko Kentaro
- Organizer
  36th International Microprocesses and Nanotechnology Conference (MNC 2023)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01811
[Presentation] Ga2O3 and beyond Ga2O3 material of GeO2 for power device2022
- Author(s)
  Kaneko Kentaro
- Organizer
  The 8th International Symposium on Advanced Science and Technology of Silicon Materials
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01811
[Presentation] ルチル型GexSn1-xO2混晶薄膜の作製とその基礎物性2022
- Author(s)
  高根倫史，若松岳，田中勝久，四戸孝，金子健太郎
- Organizer
  第69回応用物理学会　春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01811
[Presentation] High-Speed Growth of Epitaxial Rutile GeO2 Thin Film on (001) TiO2 Under Highly Oxygen-Rich Condition and Its Structural Analysis2021
- Author(s)
  Takane Hitoshi、Kaneko Kentaro
- Organizer
  The Electrochemical Society (2021 ECS)
- Data Source
  KAKENHI-PROJECT-21H01811
[Presentation] ミストCVD法によるルチル型GeO2薄膜のエピタキシャル成長2021
- Author(s)
  高根倫史，柳生慎悟，四戸孝，金子健太郎
- Organizer
  第82回応用物理学会　秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01811
[Presentation] ミストCVD法によるIrBr3前駆体を用いたα-Ir2O3薄膜の成長2021
- Author(s)
  赤石智悠, 　四戸孝,　金子健太郎
- Organizer
  第82回応用物理学会　秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01811
[Presentation] 準安定相および非平衡系材料の合成と新規機能開拓2021
- Author(s)
  金子健太郎，藤田　静雄
- Organizer
  第68回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-18H01870
[Presentation] Fabrication of rutile germanium dioxide thin film with high growth rate under highly oxygen-rich condition and its structural properties2021
- Author(s)
  Takane Hitoshi、Kaneko Kentaro
- Organizer
  40th Electronic Materials Symposium (EMS-40)
- Data Source
  KAKENHI-PROJECT-21H01811
[Presentation] P-type α-(Ir,Ga)2O3 with a band gap of more than 4 eV2020
- Author(s)
  Kentaro Kaneko, Yasuhisa Masuda, Shin-ichi Kan, Isao Takahashi, Yuji Kato, Ryohei Kanno, Masahiro Sugimoto, Takashi Shinohe, and Shizuo Fujita
- Organizer
  第39回電子材料シンポジウム
- Data Source
  KAKENHI-PROJECT-18H01870
[Presentation] バンドギャップ4 eV以上のp型α-(Ir,Ga)2O3の作製2020
- Author(s)
  金子健太郎，増田泰久，高橋勲，菅野亮平，四戸孝，藤田静雄
- Organizer
  第81回応用物理学会　秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18H01870
[Presentation] P-type α-(Ir,Ga)2O3 thin films in Gallium Oxide Electronics2019
- Author(s)
  Kentaro Kaneko, Takashi Shinohe, and Shizuo Fujita
- Organizer
  13th Topical Workshop on Heterostructure Microelectronics
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01870
[Presentation] 酸化ガリウムエレクトロニクスにおける p型作製の手法2019
- Author(s)
  金子健太郎、藤田静雄
- Organizer
  エレクトロニクス実装学会　パワーエレクトロニクス研究会
- Invited
- Data Source
  KAKENHI-PROJECT-18H01870
[Presentation] P-type Semiconductor Oxides in Gallium Oxide Electronics2019
- Author(s)
  Kentaro Kaneko, Shin-ichi Kan,Takashi Shinohe, and Shizuo Fujita
- Organizer
  Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01870
[Presentation] 酸化ガリウムおよびそのp型層となる材料の開拓2019
- Author(s)
  金子健太郎、藤田静雄
- Organizer
  エレクトロニクス実装学会　部品内蔵技術研究委員会
- Invited
- Data Source
  KAKENHI-PROJECT-18H01870
[Presentation] α-Ga2O3のデバイス実用化とp型層の魅力2019
- Author(s)
  金子健太郎、四戸孝、藤田静雄
- Organizer
  日本結晶成長学会ナノエピ分科会　第11回ナノ構造・エピタキシャル成長講演会
- Invited
- Data Source
  KAKENHI-PROJECT-18H01870
[Presentation] Novel P-type Oxide Semiconductors of α-Ir2O3 in Gallium Oxide Electronics2018
- Author(s)
  Kentaro Kaneko, Shin-ichi Kan, Shu Takemoto, Isao Takahashi, Masahiro Sugimoto, Takashi Shinohe, and Shizuo Fujita
- Organizer
  Material Research Society Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01870
[Presentation] 完全格子整合系スピン FET 実現に向けた α-(In,Ga)2O3, α-(Ga,Fe)2O3 混晶薄膜の成長2016
- Author(s)
  内田昌志, 金子健太郎, 藤田静雄
- Organizer
  高知工科大学総合研究所ナノテク研シンポジウム 2016
- Place of Presentation
  高知工科大学永国寺キャンパス
- Year and Date
  2016-11-12
- Data Source
  KAKENHI-PROJECT-15K17461
[Presentation] Corundum-Structured α-In2O3 as a Wide-Bandgap Semiconductor2016
- Author(s)
  Shizuo Fujita, Masashi Kitajima, and Kentaro Kaneko
- Organizer
  Materials Reseach Society Fall Meeting
- Place of Presentation
  Boston, USA
- Year and Date
  2016-11-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13350
[Presentation] Fabrication of alpha-(In,M)2O3 (M=Fe, Ga) alloy thin films for all-corundum structured spin FET2016
- Author(s)
  Masashi Uchida, Sachio Komori, Itsuhiro Kakeya, Kentaro Kaneko, and Shizuo Fujita
- Organizer
  2016 European Materials Research Society
- Place of Presentation
  Warsaw, Poland
- Year and Date
  2016-09-19
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K17461
[Presentation] Sn ドープ α-(Al,Ga)2O3 混晶薄膜の作製と熱処理後の ESR 測定2016
- Author(s)
  竹本柊, 内田貴之, 神野莉衣奈, 金子健太郎, 田中勝久, 藤田静雄
- Organizer
  高知工科大学総合研究所ナノテク研シンポジウム 2016
- Place of Presentation
  高知工科大学永国寺キャンパス
- Year and Date
  2016-11-12
- Data Source
  KAKENHI-PROJECT-15K17461
[Presentation] Snドープα-(AlxGa1-x)2O3薄膜の作製とESR測定2016
- Author(s)
  竹本柊, 内田貴之, 神野莉絵奈, 金子健太郎, 田中勝久, 藤田静雄
- Organizer
  2016年第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ, 新潟
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15K17461

1. FUJITA Shizuo (20135536)

# of Collaborated Projects: 2 results

# of Collaborated Products: 5 results
2. TANAKA Katsuhisa (80188292)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
3. UCHIDA Masashi

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
4. TAKEMOTO Shu

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results

kaneko kentaro 金子 健太郎

Kaneko Kentaro 金子 健太郎

KANEKO KENTARO 金子 健太郎

Research Projects

Research Products

Co-Researchers

Creation of ultra-wide bandgap p-type transition metal oxides and device applicationsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Research on adding functions to medical parts applying to the heart by using semiconductor manufacturing technologyPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Study on corundum-structured ultra-wide band gap oxides with p-type conductivityPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of novel photocatalyst consisting with low-cost and abundant materialsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Conductivity control of oxide semiconductors with reduction-reactions introduced to control oxidation processes

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Rutile-type Ge Sn1-xO2 alloy layers lattice-matched to TiO2 substrates for device applications2024

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Band-gap engineering of rutile-structured SnO2-GeO2-SiO2 alloy system2022

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Establishment of a growth route of crystallized rutile GeO<sub>2</sub> thin film (<b>≧</b>1 <i>μ</i>m/h) and its structural properties2021

Author(s)

Journal Title

DOI

Data Source

[Patent] 導電性部材2017

Inventor(s)

Industrial Property Rights Holder

Industrial Property Rights Type

Industrial Property Number

Filing Date

Data Source

[Patent] 導電性部材の製造方法2017

Inventor(s)

Industrial Property Rights Holder

Industrial Property Rights Type

Industrial Property Number

Filing Date

Data Source

[Patent] 燃料電池用セパレータ及びその製造方法2016

Inventor(s)

Industrial Property Rights Holder

Industrial Property Rights Type

Industrial Property Number

Filing Date

Data Source

[Presentation] Strategy for applying GeO2 to power semiconductors2024

Author(s)

Organizer

Data Source

[Presentation] Germanium dioxide (GeO2) as a new power device material2023

Author(s)

Organizer

Data Source

kaneko kentaro 金子健太郎

Kaneko Kentaro 金子健太郎

KANEKO KENTARO 金子健太郎