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Chen Chia-Tsong  CHEN CHIAーTSONG

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CHEN CHIAーTSONG  チエン ジヤツオン

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Researcher Number 50982120
Affiliation (Current) 2026: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究員
Affiliation (based on the past Project Information) *help 2026: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究員
2024: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究員
Review Section/Research Field
Principal Investigator
Basic Section 21060:Electron device and electronic equipment-related
Keywords
Principal Investigator
酸素空孔 / 酸化膜半導体 / ゲートスタック / 表面パッシベーション / アニーリング / 過剰酸素 / 酸素欠損 / 酸化物半導体
  • Research Projects

    (2 results)
  • Research Products

    (4 results)
  •  Interface engineering by tri-layer gate dielectric on indium oxide FETs for BEOL M3D memory applicationsPrincipal Investigator

    • Principal Investigator
      CHEN CHIAーTSONG
    • Project Period (FY)
      2026 – 2028
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      National Institute of Advanced Industrial Science and Technology
  •  Oxygen vacancy engineering on indium oxide vertical FETs for 3D power scalingPrincipal Investigator

    • Principal Investigator
      CHEN CHIAーTSONG
    • Project Period (FY)
      2024 – 2025
    • Research Category
      Grant-in-Aid for Early-Career Scientists
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      National Institute of Advanced Industrial Science and Technology

All 2025 2024

All Journal Article Presentation

  • [Journal Article] Mobility and stability improvements through in-situ AlOx passivation on extremely thin 2 nm-thick InOx back-gate FETs2025

    • Author(s)
      Chia-Tsong Chen, Wen Hsin Chang, Toshifumi Irisawa and Tatsuro Maeda
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 64 Issue: 1 Pages: 01SP07-01SP07

    • DOI

      10.35848/1347-4065/ad9bba

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-24K17328
  • [Presentation] Impact of thermal annealing and channel thickness on electrical characteristics and instability of ultrathin AlOx/InOx FETs2025

    • Author(s)
      Chia-Tsong Chen, Kasidit Toprasertpong, Toshifumi Irisawa, Shinji Migita, Wen Hsin Chang, Yukinori Morita, Hiroyuki Ota, Tatsuro Maeda
    • Organizer
      第72回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-24K17328
  • [Presentation] Impact of in-situ AlOx passivation on 2-nm-thick InOx for performance and stability improvement2024

    • Author(s)
      Chia-Tsong Chen, Yuki Yoshimoto, Wen Hsin Chang, Toshifumi Irisawa and Tatsuro Maeda
    • Organizer
      第85回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-24K17328
  • [Presentation] In-situ AlOx Passivation on Extremely Thin 2-nm InOx FETs for Mobility and Stability Improvement2024

    • Author(s)
      Chia-Tsong Chen, Wen Hsin Chang, Toshifumi Irisawa and Tatsuro Maeda
    • Organizer
      International Conference on Solid State Devices and Materials
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-24K17328

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