Mizuno Tomohisa 水野智久

… Alternative Names

水野智久ミズノトモヒサ

MIZUNO Tomohisa 水野智久

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Researcher Number	60386810
Other IDs
Affiliation (Current)	2025: 神奈川大学, 理学部, 教授
Affiliation (based on the past Project Information) *help	2017 – 2023: 神奈川大学, 理学部, 教授 2008 – 2015: Kanagawa University, 理学部, 教授
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / Electronic materials/Electric materials / Science and Engineering Except Principal Investigator Basic Section 21050:Electric and electronic materials-related / Electronic materials/Electric materials
Keywords	Principal Investigator 半導体物性 / マイクロ・ナノデバイス / 電子デバイス / 集積回路 / 不確定性原理 / SiCドット / 光物性 / ナノ材料 / 電子・電気材料 / Si酸化膜 … More / SiC量子ドット / Si系発光素子 / 量子閉じ込め効果 / ホットイオン注入 / PL発光 / 量子ドット / SiC … More Except Principal Investigator ソーラーセル / キャリヤライフタイム / パッシベーション / 加熱水 / 水蒸気熱処理 / キャリヤ拡散 / マイクロ波吸収 / 光誘起フリーキャリヤ / マイクロ波フリーキャリヤ吸収 / 評価技術 / 作製 / カットエッジ / 少数キャリヤ再結合欠陥 / 100℃ / 紫外線 / 純水 / 再結合速度 / ライフタイム / バイアス / 少数キャリヤ / 375 nm紫外レーザダイオード / 活性化 / イオン注入 / PN接合 / 再結合欠陥 / 光侵入長 / キャリヤ濃度 / 実効キャリヤライフタイム / 内蔵電位 / 効少数キャリヤライフタイム / シリコン / パッシベション膜 / 光誘起フリーキャリア / キャリアライフタイム / 低温プロセス技術 / パッシベーション膜 / キャリヤ再接合 / レーザ加熱 / キャリヤ再結合 / AlOx薄膜 / A10_x薄膜 / 酸素プラズマ酸化膜 / 高圧水蒸気熱処理 / 少数キャリヤ実効ライフタイム Less

液体プロセスによる新規低温半導体表面及びカットエッジパッシベーション
- Principal Investigator
  
  鮫島俊之
- Project Period (FY)
  2021 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Tokyo University of Agriculture and Technology
Research on behavior of the recombination defect of minority carriers depending on the internal built in potential in PN junctions
- Principal Investigator
  
  Samesima Toshiyuki
- Project Period (FY)
  2018 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Tokyo University of Agriculture and Technology
Experimental study on two-dimensional silicon-cabide using hot-carbon-ion implantation techniquePrincipal Investigator
- Principal Investigator
  
  Mizuno Tomohisa
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kanagawa University
study on high efficiency solar cell driven by metal workfunction
- Principal Investigator
  
  Sameshima Toshiyuki
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo University of Agriculture and Technology
Experimental study on two-dimensional siliconPrincipal Investigator
- Principal Investigator
  
  MIZUNO Tomohisa
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Kanagawa University
Observation of defects induced by non thermal equilibrium processes and their control used by microwave absorption of free carriers
- Principal Investigator
  
  SAMESHIMA Toshiyuki
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo University of Agriculture and Technology
Study on relaxed/strained semiconductor layer heterostructures fabricated by ion implantation induced relaxation technique of strained semiconductorsPrincipal Investigator
- Principal Investigator
  
  MIZUNO Tomohisa
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Kanagawa University
ソースヘテロ構造を用いたバリスティック素子の基盤研究Principal Investigator
- Principal Investigator
  
  水野智久
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Kanagawa University

[Journal Article] Passivation of cut edges and surfaces of crystalline silicon by heat treatment in liquid water2023
- Author(s)
  Masahiko Hasumi, Toshiyuki Sameshima, and Tomohisa Mizuno
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 62
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21K04134
[Journal Article] Passivation of cut edges of crystalline silicon by heat treatment in liquid water2023
- Author(s)
  Masahiko Hasumi, Toshiyuki Sameshima and Tomohisa Mizuno
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: SK Pages: SK1022-SK1022
- DOI
  10.35848/1347-4065/acc666
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21K04134, KAKENHI-PROJECT-22K04180
[Journal Article] SiC quantum dot formation in SiO2 layer using double hot-Si+/C+-ion implantation technique2020
- Author(s)
  Mizuno Tomohisa、Kanazawa Rikito、Aoki Takashi、Sameshima Toshiyuki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: SG Pages: SGGH02-SGGH02
- DOI
  10.7567/1347-4065/ab5bc4
- NAID
  210000157669
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06359
[Journal Article] SiC Quantum Dots in Si-Oxide Layer Fabricated by Double Hot-Si+/C+-Ion Implantation Technique2019
- Author(s)
  T. Mizuno, R. Kanazawa, T. Aoki, and T. Sameshima
- Journal Title
  
  Extended Abst. of Solid State Devices and Materials
  
  Volume: - Pages: 887-888
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06359
[Journal Article] Si Surface Orientation Dependence of SiC Nano-Dot Formation in Hot-C+-Ion Implanted Bulk-Si Substrate2019
- Author(s)
  T. Mizuno, M. Yamamoto, T. Aoki, T. Sameshima
- Journal Title
  
  Abst. IEEE Silicon Nanoelectronics Workshop
  
  Volume: - Pages: 115-116
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06359
[Journal Article] SiC nanodot formation in amorphous-Si and poly-Si substrates using a hot-C+-ion implantation technique2019
- Author(s)
  Tomohisa Mizuno, Rikito Kanazawa, Takashi Aoki, and Toshiyuki Sameshima
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SB Pages: SBBJ01-SBBJ01
- DOI
  10.7567/1347-4065/aafb4e
- NAID
  210000135332
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06359
[Journal Article] SiC nano-dot formation in bulk-Si substrate using hot-C+-ion implantation process2019
- Author(s)
  Mizuno Tomohisa、Yamamoto Masaki、Nakada Shinji、Irie Sho、Aoki Takashi、Sameshima Toshiyuki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: 8 Pages: 081004-081004
- DOI
  10.7567/1347-4065/ab2ac9
- NAID
  210000156444
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06359
[Journal Article] Nano-SiC region formation in (100) Si-on-insulator substrate: Optimization of hot-C+-ion implantation process to improve photoluminescence intensity2018
- Author(s)
  Mizuno Tomohisa、Omata Yuhsuke、Kanazawa Rikito、Iguchi Yusuke、Nakada Shinji、Aoki Takashi、Sasaki Tomokazu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 4S Pages: 04FB03-04FB03
- DOI
  10.7567/jjap.57.04fb03
- NAID
  210000148858
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06359
[Journal Article] SiC Nano-Dot Controlled by Hot-C+-Ion Implantation Conditions in Bulk-Si Substrate for Photonic Devices2018
- Author(s)
  T. Mizuno, S. Nakada, M. Yamamoto, S. Irie, T. Aoki, T. Sameshima
- Journal Title
  
  Abst. IEEE Silicon Nanoelectronics Workshop
  
  Volume: - Pages: 121122-121122
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06359
[Journal Article] SiC Dots in Amorphous-Si and Poly-Si Substrates Fabricated by Hot-C+ -Ion Implantation2018
- Author(s)
  T. Mizuno, R. Kanazawa, Y. Omata, T. Aoki, and T. Sameshima
- Journal Title
  
  Extended Abst. of Solid State Devices and Materials
  
  Volume: - Pages: 803804-803804
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06359
[Journal Article] SiC Nano-Dots in Bulk-Si Substrate Fabricated by Hot-C+-Ion Implantation Technique2017
- Author(s)
  T. Mizuno, S. Nakada, M. Yamamoto, S. Irie, Y. Omata, T. Aoki, and T. Sameshima
- Journal Title
  
  Extended Abst. of SSDM
  
  Volume: - Pages: 597-598
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06359
[Journal Article] Hot-C+-Ion Implantation Optimization for Forming Nano-SiC Region at Surface (100 )SOI Substrate2017
- Author(s)
  T. Mizuno, Y. Omata, S. Nakada, T. Aoki, and T. Sasaki
- Journal Title
  
  Extended Abst. of SSDM
  
  Volume: - Pages: 537-538
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06359
[Journal Article] Heat treatment in 110oC liquid water used for passivating siliconsurfaces2016
- Author(s)
  T. Nakamura, T. Motoki, J. Ubukata, T. Sameshima, M. Hasumi and T. Mizuno
- Journal Title
  
  Appl. Phys. A.
  
  Volume: 122 Issue: 4
- DOI
  10.1007/s00339-016-9976-z
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25420282
[Journal Article] Surface-oxide stress induced band-structure modulation in two-dimensional Si layers2015
- Author(s)
  T. Mizuno, Y. Suzuki, Y. Nagamine, Y. Nakahara, Y. Nagata, T. Aoki, and T. Maeda
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 54 Issue: 4S Pages: 04DC02-04DC02
- DOI
  10.7567/jjap.54.04dc02
- NAID
  210000144960
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24560422
[Journal Article] Passivation of silicon surfaces by heat treatment in liquid water at 110oC2015
- Author(s)
  T. Nakamura, T. Sameshima, M. Hasumi, and T. Mizuno
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 54 Issue: 10 Pages: 106503-106503
- DOI
  10.7567/jjap.54.106503
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25420282
[Journal Article] Photoinduced carrier annihilation in silicon pn junction2015
- Author(s)
  T. Sameshima, T. Motoki, K. Yasuda, T. Nakamura, M. Hasumi, and T. Mizuno
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 54 Issue: 8 Pages: 081302-081302
- DOI
  10.7567/jjap.54.081302
- NAID
  210000145492
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25420282
[Journal Article] Impurity doping effects on impurity band structure modulation2015
- Author(s)
  T. Mizuno, Y. Nagamine, Y. Suzuki, Y. Nakahara, Y. Nagata, T. Aoki, and T. Sameshima
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 54 Issue: 4S Pages: 04DC05-04DC05
- DOI
  10.7567/jjap.54.04dc05
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24560422
[Journal Article] Crystal direction dependence of quantum confinement effects of two-dimensional Si layers fabricated on silicon-on-quartz substrates: modulation of phonon spectra and energy-band structures2014
- Author(s)
  T. Mizuno, Y. Nagata, Y. Suzuki, Y. Nakahara, T. Aoki, and T. Sameshima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Issue: 4S Pages: 04EC09-04EC09
- DOI
  10.7567/jjap.53.04ec09
- NAID
  210000143563
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560422, KAKENHI-PROJECT-25420282
[Journal Article] n+/p+-Single Doping Effects on Impurity Band Structure Modulation2014
- Author(s)
  T. Mizuno, Y. Nakahara, Y. Nagamine, Y. Suzuki, Y. Nagata, T. Aoki, and T. Sameshima
- Journal Title
  
  Extended Abst. of SSDM
  
  Volume: なし Pages: 854-855
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24560422
[Journal Article] Impact of Surface Oxide Layer on Band Structure Modulation2014
- Author(s)
  T. Mizuno, Y. Suzuki, M. Yamanaka, Y. Nagamine, Y. Nakahara, Y. Nagata, T. Aoki, and T. Maeda
- Journal Title
  
  Extended Abst. of SSDM
  
  Volume: なし Pages: 46-47
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24560422
[Journal Article] Quantum confinement effects in doped two-dimensional Si layers: novel device design for two-dimensional pn-junction structures2014
- Author(s)
  T. Mizuno, Y. Nakahara, Y. Nagata, Y. Suzuki, T. Aoki, and T. Sameshima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Issue: 4S Pages: 04EC08-04EC08
- DOI
  10.7567/jjap.53.04ec08
- NAID
  210000143562
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560422, KAKENHI-PROJECT-25420282
[Journal Article] Experimental Study on Surface-Orientation/Strain Dependence of Phonon Confinement Effects and Band Structure Modulation in Two-Dimensional Si Layers2013
- Author(s)
  Tomohisa Mizuno, Takashi Aoki, Yuhsuke Nagata, Yuhta Nakahara, and Toshiyuki Sameshima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 52 Issue: 4S Pages: 04CC13-04CC13
- DOI
  10.7567/jjap.52.04cc13
- NAID
  210000142000
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560422
[Journal Article] Anisotropic Phonon-Confinement-Effects/Band-Structure-Modulation of Two-Dimensional Si Layers Fabricated on Silicon-on-Quartz Substrates2013
- Author(s)
  T. Mizuno, Y. Nagata, Y. Suzuki, Y. Nakahara, T. Tanaka, T. Aoki and T. Sameshima
- Journal Title
  
  Extended Abst. of SSDM
  
  Volume: なし Pages: 96-97
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560422
[Journal Article] Physical Limitation of pn Junction in Two Dimensional Si Layers for Future CMOS2013
- Author(s)
  T. Mizuno, Y. Nakahara, Y. Nagata, Y. Suzuki, Y. Kubodera, Y. Shimizu, T. Aoki, and T. Sameshima
- Journal Title
  
  Extended Abst. of SSDM
  
  Volume: なし Pages: 696-697
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560422
[Journal Article] Postannealing Effects on Strain/Crystal Quality of Lateral Source Relaxed/Strained Layer Heterostructures Fabricated by O+Ion Implantation2012
- Author(s)
  T. Mizuno, J. Takehi, and S. Tanabe
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 51 Pages: 1-4
- NAID
  210000140487
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560371
[Journal Article] Postannealing Effects on Strain/Crystal Quality of Lateral Source Relaxed/Strained Layer Heterostructures Fabricated by O^+ Ion Implantation2012
- Author(s)
  T.Mizuno, J.Takehi, S.Tanabe
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 51 Issue: 4S Pages: 04DC01-04DC01
- DOI
  10.1143/jjap.51.04dc01
- NAID
  210000140487
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560371
[Journal Article] Experimental Study of Silicon Monolayers for Future Extremely Thin Silicon-on-Insulator Devices: Phonon/Band Structures Modulation Due to Quantum Confinement Effects2012
- Author(s)
  Tomohisa Mizuno, Keisuke Tobe, Yohichi Maruyama, and Toshiyuki Sameshima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 51 Issue: 2S Pages: 02BC03-02BC03
- DOI
  10.1143/jjap.51.02bc03
- NAID
  210000140201
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560422
[Journal Article] Minority Carrier Lifetime Behavior in Crystalline Silicon in Rapid Laser Heating2012
- Author(s)
  T. Sameshima, K. Betsuin, T. Mizuno and N. Sano
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: Vol.51 Issue: 3S Pages: 03CA04-03CA04
- DOI
  10.1143/jjap.51.03ca04
- NAID
  210000140376
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560292
[Journal Article] Lateral Source Relaxed/Strained Layer Heterostructures for Ballistic CMOS : Physical Relaxation Mechanism for Strained Layers by O+ Ion Implantation2011
- Author(s)
  T.Mizuno, J.Takehi, S.Tanabe
- Journal Title
  
  Extended Abst.of SSDM
  
  Pages: 839-840
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560371
[Journal Article] Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors2011
- Author(s)
  T. Mizuno, M. Hasegawa, and T. Sameshima
- Journal Title
  
  Key Engineering Materials
  
  Volume: 470 Pages: 72-78
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560371
[Journal Article] Abrupt Lateral-Source Heterostructures with Lateral-Relaxed/Strained Layers for Ballistic CMOS Transistors Fabricated by Local O+Ion Induced Relaxation Technique of Strained Substrates2011
- Author(s)
  T. Mizuno, M. Hasegawa, K. Ikeda, M. Nojiri, and T. Horikawa
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 50 Pages: 2-4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560371
[Journal Article] Experimental Study of Single Source-Heterojunction MOS Transistors(SHOTs) for Quasi-Ballistic Regime : Optimization of Source-Hetero Structures and Electron Velocity Characteristics at Low Temperature2011
- Author(s)
  T. Mizuno, Y. Moriyama, T. Tezuka, N. Sugiyama, and S. Takagi
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 50 Pages: 10107-10107
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560371
[Journal Article] Lateral Source Relaxed/Strained Layer Heterostructures for Ballistic CMOS : Physical Relaxation Mechanism for Strained Layers by O+Ion Implantation2011
- Author(s)
  T. Mizuno, J. Takehi, and S. Tanabe
- Journal Title
  
  Extended Abst. of SSDM
  
  Pages: 839-839
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560371
[Journal Article] New Source Heterojunction Structures with Relaxed/Strainal Semiconductors for Quasi-Ballistic Complementary Metal-Oxide-Semiconductor Transistors : Relaxation Technique of Strained Substrates and Design of Sub-10nm Devices2010
- Author(s)
  Tomohisa Mizuno, Naoki Mizoguchi, Kotaio Tanimoto, Tomoaki Yamauchi, Mitsuo Hasegawa, Toshiyuki Sameshima, Tsutomu Tezuka
- Journal Title
  
  Jpn.J.Appl.Phys. 49
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035014
[Journal Article] Experimental Study of Single Source-Heterojunction MOS Transistors (SHOTs) for Quasi-Ballistic Regime : Optimization of Source-Hetero Structures and Electron Velocity Characteristics at Low Temperature2010
- Author(s)
  T.Mizuno, Y.Moriyama, T.Tezuka, N.Sugiyama, S.Takagi
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 50
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560371
[Journal Article] New Source Heterojunction Structures with Relaxed/Strained Semiconductors for Quasi-Ballistic Complementary Metal-Oxide-Semiconductor Transistors : Relaxation Technique of Strained Substrates and Design of Sub-10nm Devices2010
- Author(s)
  Tomohisa Mizuno, Naoki Mizoguchi, Kotaro Tanimoto, Tomoaki Yamauchi, Mitsuo Hasegawa, Toshiyuki Sameshima, Tsutomu Tezuka
- Journal Title
  
  Jpn.J.Appl.Phys. 49
- NAID
  210000068211
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560371
[Journal Article] Abrupt Source Heterostructures with Lateral-Relaxed/Strained Layers for Quasi-Ballistic CMOS Transistors using Lateral Strain Control Technique of Strained Substrates2010
- Author(s)
  T. Mizuno, M. Hasegawa, K. Ikeda, M. Nojiri, and T. Horikawa
- Journal Title
  
  Extended Abst. of SSDM
  
  Pages: 45-45
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560371
[Journal Article] Source Heterojunction with Relaxed/Strained-Layers for Quasi-Ballistic CMOS Transistors2010
- Author(s)
  T.Mizuno, M.Hasegawa, T.Sameshima
- Journal Title
  
  Extend.Abst.ISTESNE
  
  Pages: 66-66
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560371
[Journal Article] Abrupt Source Heterostructures with Lateral-Relaxed/Strained Layers for Quasi-Ballistic CMOS Transistors using Lateral Strain Control Technique of Strained Substrates2010
- Author(s)
  T.Mizuno, M.Hasegawa, K.Ikeda, M.Nojiri, T.Horikawa
- Journal Title
  
  Ext.Abstr.SSDM
  
  Pages: 45-46
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560371
[Journal Article] Source Heterojunction with Relaxed/Strained-Layers for Quasi-Ballistic CMOS Transistors2010
- Author(s)
  T. Mizuno, M. Hasegawa, and T. Sameshima
- Journal Title
  
  ISTESNE
  
  Pages: 66-66
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560371
[Journal Article] Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors using Ion Implantation Induced Relaxation Technique of Strained-Substrates2009
- Author(s)
  T.Mizuno, N.Mizoguchi, K..Tanimoto, T.Yamauchi, T.Tezuka, T.Sameshima
- Journal Title
  
  Ext.Ahstr.SSDM
  
  Pages: 769-770
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035014
[Journal Article] Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors using Ion Implantation Induced Relaxation Technique of Strained-Substrates2009
- Author(s)
  T. Mizuno, N. Mizoguchi, K. Tanimoto, T. Yamauchi, T. Tezuka, and T. Sameshima
- Journal Title
  
  Extended Abst. of SSDM
  
  Pages: 769-769
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560371
[Journal Article] Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors using Ion Implantation Induced Relaxation Technique of Strained-Substrates2009
- Author(s)
  T.Mizuno, N.Mizoguchi, K.Tanimoto, T.Yamauchi, T.Tezuka, T.Sameshima
- Journal Title
  
  Ext.Abstr.SSDM
  
  Pages: 769-770
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560371
[Patent] 半導体素子構造の形成方法、及び半導体素子2009
- Inventor(s)
  水野智久
- Industrial Property Rights Holder
  学校法人神奈川大学
- Industrial Property Number
  2009-208652
- Filing Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-20035014
[Presentation] Nondestructive Investigation of Impurity Activation using Microwave Transmission Measurement2023
- Author(s)
  Masahiko Hasumi, Toshiyuki Sameshima, and Tomohisa Mizuno
- Organizer
  20th Thin Film Materials & Devices Meeting, Kyoto, 12a-A27-6, 2023
- Data Source
  KAKENHI-PROJECT-21K04134
[Presentation] Properties of complete absorption of 2.45 GHz microwave and heating by the two conductive plate system2023
- Author(s)
  Toshiyuki Sameshima, Tomoyoshi Miyazaki, Masahiko Hasumi, Wakana Kubo, Tomo Ueno, and Tomohisa Mizuno
- Organizer
  20th Thin Film Materials & Devices Meeting, Kyoto, 10p-P36, 2023.
- Data Source
  KAKENHI-PROJECT-21K04134
[Presentation] Passivation of cut edges of crystalline silicon by heat treatment in liquid water2022
- Author(s)
  Masahiko Hasumi, Toshiyuki Sameshima, and Tomohisa Mizuno
- Organizer
  33th International Photovoltaic Science and Engineering Conference (PVSEC33)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04134
[Presentation] 935 GHz マイクロ波透過測定を用いたシリコンの電気特性評価2021
- Author(s)
  蓮見真彦、鮫島俊之、水野智久
- Organizer
  薄膜材料デバイス研究会
- Data Source
  KAKENHI-PROJECT-18K04225
[Presentation] Non-Destructive 9.35 GHz Microwave Sensing System for Investigating Electrical Properties of Silicon2020
- Author(s)
  T. Sameshima, M. Hasumi, T. Mizuno
- Organizer
  2020 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04225
[Presentation] 多結晶SiとアモルファスSi基板へのホットC＋イオン注入法によるSiCナノドットの形成(Ⅱ):C+ドーズ依存性2019
- Author(s)
  金澤力斗, 青木孝，鮫島俊之，水野智久
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] Si Surface Orientation Dependence of SiC Nano-Dot Formation in Hot-C+-Ion Implanted Bulk-Si Substrate2019
- Author(s)
  T. Mizuno, M. Yamamoto, T. Aoki, T. Sameshima
- Organizer
  IEEE Silicon Nanoelectronics Workshop
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] バルクSi基板へのホットC＋イオン注入法によるSiCナノドット形成 (Ⅳ)：面方位依存性2019
- Author(s)
  山本将輝，青木孝，鮫島俊之，水野智久
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] ホット-ダブルSi+/C＋イオン注入法を用いた酸化膜中のSiC量子ドットの形成2019
- Author(s)
  金澤力斗, 青木孝，鮫島俊之，水野智久
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] SiC Quantum Dots in Si-Oxide Layer Fabricated by Double Hot-Si+/C+-Ion Implantation Technique2019
- Author(s)
  T. Mizuno, R. Kanazawa, T. Aoki, and T. Sameshima
- Organizer
  International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] バルクSi基板へのホットC＋注入法によるSiCナノドット形成　(III)：Cドーズ量依存性2018
- Author(s)
  入江翔, 山本将輝, 中田真史，小又祐介，青木孝，鮫島俊之，水野智久
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] SiC Dots in Amorphous-Si and Poly-Si Substrates Fabricated by Hot-C+ -Ion Implantation2018
- Author(s)
  T. Mizuno, R. Kanazawa, Y. Omata, T. Aoki, and T. Sameshima
- Organizer
  International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] 多結晶SiへのホットC＋イオン注入法によるSiCナノドットの形成2018
- Author(s)
  金澤力斗，小又祐介，井口裕輔，青木孝，鮫島俊之，水野智久
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] バルクSi基板へのホットC＋イオン注入法によるSiCナノドットの形成(Ⅱ) :イオン注入温度依存性2018
- Author(s)
  中田真史，山本将輝，入江翔，小又祐介，青木孝，鮫島俊之，水野智久
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] バルクSi基板中のSiCナノドットサイズのプロセス依存性2018
- Author(s)
  山本将輝，青木孝，鮫島俊之，水野智久
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] 多結晶SiとアモルファスSi基板へのホットC＋イオン注入法によるSiCナノドットの形成2018
- Author(s)
  金澤力斗, 青木孝，鮫島俊之，水野智久
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] SiC Nano-Dot Controlled by Hot-C+-Ion Implantation Conditions in Bulk-Si Substrate for Photonic Devices2018
- Author(s)
  T. Mizuno, S. Nakada, M. Yamamoto, S. Irie, T. Aoki, T. Sameshima
- Organizer
  IEEE Silicon Nanoelectronics Workshop
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] (100)SOI基板表層でのナノ構造　SiC形成用ホットC+イオン注入法の最適化2017
- Author(s)
  小又祐介，青木孝，佐々木智一，水野智久
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] バルク Si 基板へのホット C＋イオン注入法による SiC ナノドットの形成2017
- Author(s)
  中田真史，山本将暉，入江翔，小又祐介，青木孝，鮫島俊之，水野智久
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] Hot-C+-Ion Implantation Optimization for Forming Nano-SiC Region at Surface (100 )SOI Substrate2017
- Author(s)
  T. Mizuno, Y. Omata, S. Nakada, T. Aoki, and T. Sasaki
- Organizer
  International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] SiC Nano-Dots in Bulk-Si Substrate Fabricated by Hot-C+-Ion Implantation Technique2017
- Author(s)
  T. Mizuno, S. Nakada, M. Yamamoto, S. Irie, Y. Omata, T. Aoki, and T. Sameshima
- Organizer
  International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06359
[Presentation] 数nm-MOS素子用二次元Si層検討（Ⅺ）：C添加による物性変調2015
- Author(s)
  [52]長嶺由騎，鈴木佑弥，青木孝，水野智久
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11
- Data Source
  KAKENHI-PROJECT-24560422
[Presentation] Annihilation Properties of Photo-Induced Carrier in Silicon PN Junction2015
- Author(s)
  M. Hasumi, T. Sameshima, T. Motoki, T. Nakamura and T. Mizuno
- Organizer
  Active Matrix Flat Panel Displays
- Place of Presentation
  龍谷大学アバンティ響都ホール(京都府京都市)
- Year and Date
  2015-07-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420282
[Presentation] Passivation of Silicon Surfaces by Treatment in Water at 110oC2015
- Author(s)
  T. Nakamura, T. Sameshima, M. Hasumi, T. Mizuno
- Organizer
  Mater. Res. Soc. Symp. Proc.
- Place of Presentation
  USA, San Francisco
- Year and Date
  2015-04-06
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420282
[Presentation] 数nm-CMOS 素子用二次元Si層の検討 (Ⅹ)：水素アニールによる影響2015
- Author(s)
  鈴木佑弥，長嶺由騎，青木孝，前田辰郎，水野智久
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11
- Data Source
  KAKENHI-PROJECT-24560422
[Presentation] Heat treatment in 110oC liquid water used for Passivating silicon surfaces2015
- Author(s)
  T. Nakamura, T. Sameshima, M. Hasumi, T. Mizuno
- Organizer
  Active Matrix Flat Panel Displays
- Place of Presentation
  龍谷大学アバンティ響都ホール(京都府京都市)
- Year and Date
  2015-07-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420282
[Presentation] n+/p+-Single Doping Effects on Impurity Band Structure Modulation2014
- Author(s)
  T. Mizuno, Y. Nakahara, Y. Nagamine, Y. Suzuki, Y. Nagata, T. Aoki, and T. Sameshima
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  Tsukuba International Congress Center
- Year and Date
  2014-09-10
- Data Source
  KAKENHI-PROJECT-24560422
[Presentation] 数nm-CMOS素子用二次元Si層の検討(Ⅷ):酸化膜応力によるバンド変調2014
- Author(s)
  鈴木佑弥,　長嶺由騎，山中正博，青木孝，前田辰郎, 水野智久
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-18
- Data Source
  KAKENHI-PROJECT-24560422
[Presentation] Impact of Surface Oxide Layer on Band Structure Modulation2014
- Author(s)
  T. Mizuno, Y. Suzuki, M. Yamanaka, Y. Nagamine, Y. Nakahara, Y. Nagata, T. Aoki, and T. Maeda
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  Tsukuba International Congress Center
- Year and Date
  2014-09-10
- Data Source
  KAKENHI-PROJECT-24560422
[Presentation] 数nm-COMOS素子用二次元Si層の検討（Ⅸ）：量子閉じ込め効果の結晶方位依存性へのドーパントの影響2014
- Author(s)
  長嶺由騎,　鈴木佑弥，青木孝，鮫島俊之，水野智久
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-18
- Data Source
  KAKENHI-PROJECT-24560422
[Presentation] Passivation of Silicon Surface by Laser Rapid Heating2013
- Author(s)
  T. Sameshima, H. Abe, M. Hasumi, T. Mizuno, and N. Sano
- Organizer
  レーザー先端材料加工国際会議
- Place of Presentation
  朱鷺メッセ新潟コンベンションセンター
- Data Source
  KAKENHI-PROJECT-25420282
[Presentation] Activation of Silicon Implanted with Dopant Atoms by Microwave Heating2013
- Author(s)
  T. Sameshima, T. Nakamura, S. Yoshidomi, M. Hasumi, T. Ishii, Y. Inouchi, M. Naito and T. Mizuno
- Organizer
  Solid State Devices and Materials 2013
- Place of Presentation
  ヒルトン福岡シーホーク
- Data Source
  KAKENHI-PROJECT-25420282
[Presentation] 単一半導体を用いた新ソースヘテロ構造の検討(VI):H^+イオン注入による良好な結晶性の実現2012
- Author(s)
  武樋樹里亜, 赤松大夢, 阿部勇貴, 水野智久
- Organizer
  応用物理学会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21560371
[Presentation] 単一半導体を用いた新ソースへテロ構造の検討(VI):H+イオン注入による良好な結晶性の実現2012
- Author(s)
  武樋樹里亜, 赤松大夢, 阿部勇貴, 水野智久
- Organizer
  応用物理学会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21560371
[Presentation] 単一半導体を用いた新ソースヘテロ構造の検討(IV):歪みSi層の緩和メカニズム2011
- Author(s)
  武樋樹里亜, 田邊奨, 有馬広記, 星野靖, 中田穣治, 水野智久
- Organizer
  応用物理学会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-21560371
[Presentation] Lateral Source Relaxed/Strained Layer Heterostructures for Ballistic CMOS : Physical Relaxation Mechanism for Strained Layers by O+ Ion Implantation2011
- Author(s)
  T.Mizuno, J.Takehi, S.Tanabe
- Organizer
  SSDM
- Place of Presentation
  Aichi Industry & Labor Center
- Year and Date
  2011-09-28
- Data Source
  KAKENHI-PROJECT-21560371
[Presentation] 単一半導体を用いた新ソースへテロ構造の検討(IV):歪みSi層の緩和メカニズム2011
- Author(s)
  武樋樹里亜, 田邊奨, 有馬広記, 星野靖, 中田穣治, 水野智久
- Organizer
  応用物理学会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-21560371
[Presentation] 単一半導体を用いた新ソースへテロ構造の検討(V):緩和/歪みSiヘテロ構造の結晶性2011
- Author(s)
  水野智久
- Organizer
  応用物理学会
- Place of Presentation
  山形大学
- Year and Date
  2011-09-02
- Data Source
  KAKENHI-PROJECT-21560371
[Presentation] 単一半導体を用いた新ソースヘテロ構造の検討(V):緩和/歪みSiヘテロ構造の結晶性2011
- Author(s)
  水野智久, 武樋樹里亜, 田邊奨
- Organizer
  応用物理学会
- Place of Presentation
  山形大学
- Year and Date
  2011-09-02
- Data Source
  KAKENHI-PROJECT-21560371
[Presentation] Lateral Source Relaxed/Strained Layer Heterostructures for Ballistic CMOS : Physical Relaxation Mechanism for Strained Layers by O+Ion Implantation2011
- Author(s)
  T. Mizuno
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  名古屋
- Year and Date
  2011-09-28
- Data Source
  KAKENHI-PROJECT-21560371
[Presentation] Change in Minority Carrier Lifetime Caused by Rapid Laser Heating2011
- Author(s)
  K. Betsuin, Y. Kanda, W. Kato, S.Yoshidomi, M. Hasumi T. Sameshima, N. Sano, and T. Mizuno
- Organizer
  The Eighteenth International Workshop on Active-Matrix Flatpanel Displays and Devices
- Place of Presentation
  龍谷大学アバンティ響都ホール(京都市)
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] Abrupt Source Heterostructures with Lateral-Relaxed/Strained Layers for Quasi-Ballistic CMOS Transistors using Lateral Strain Control Technique of Strained Substrates2010
- Author(s)
  T. Mizuno
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  東京大学
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-21560371
[Presentation] Source Heterojunction with Relaxed/Strained-Layers for Quasi-Ballistic CMOS Transistors2010
- Author(s)
  T. Mizuno
- Organizer
  International Symposium on Technology Evolution for Silicon Nano-Electronics
- Place of Presentation
  東京工業大学
- Year and Date
  2010-06-04
- Data Source
  KAKENHI-PROJECT-21560371
[Presentation] Minority Carrier Lifetime Measurement by Photo-Induced Carrier Microwave Absorption Method2010
- Author(s)
  T. Nagao, S. Yoshidomi, M. Hasumi, T. Sameshima and T. Mizuno
- Organizer
  Proc in 7^<th> Thin Film Materials & Devices Meeting
- Place of Presentation
  百年会館(奈良)
- Data Source
  KAKENHI-PROJECT-22560292
[Presentation] Source Heterojunction with Relaxed/Strained-Layers for Quasi-Ballistic CMOS Transistors2010
- Author(s)
  T.Mizuno, M.Hasegawa, T.Sameshima
- Organizer
  ISTESNE
- Place of Presentation
  Tokyo
- Year and Date
  2010-06-04
- Data Source
  KAKENHI-PROJECT-21560371
[Presentation] 単一半導体を用いた新ソースへテロ構造の検討:(II):CMOS用緩和/歪半導体構造2010
- Author(s)
  水野智久
- Organizer
  応用物理学会
- Place of Presentation
  東海大学
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21560371
[Presentation] 単一半導体を用いた新ソースへテロ構造の検討(III):急峻な横方向歪み分布の実現2010
- Author(s)
  水野智久
- Organizer
  応用物理学会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PROJECT-21560371
[Presentation] Abrupt Source Heterostructures with Lateral-Relaxed/Strained Layers for Quasi-Ballistic CMOS Transistors using Lateral Strain Control Technique of Strained Substrates2010
- Author(s)
  T.Mizuno, M.Hasegawa, K.Ikeda, M.Nojiri, T.Horikawa
- Organizer
  SSDM
- Place of Presentation
  Tokyo
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-21560371
[Presentation] 単一半導体を用いた新ソースヘテロ構造の検討(III):急峻な横方向歪み分布の実現2010
- Author(s)
  水野智久, 長谷川光央, 野尻真士, 堀川剛
- Organizer
  応用物理学会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PROJECT-21560371
[Presentation] 巣一半導体を用いた新ソースヘテロ構造の検討(II):CMOS川緩和/歪半導体構造2010
- Author(s)
  水野智久, 長谷川光央, 鮫島俊之
- Organizer
  応用物理学会
- Place of Presentation
  東海大学
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-20035014
[Presentation] 単一半導体を用いた新ソースヘテロ構造の検討(II):CMOS用緩和/歪半導体構造2010
- Author(s)
  水野智久, 長谷川光央, 鮫島俊之
- Organizer
  応用物理学会
- Place of Presentation
  東海大学
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21560371
[Presentation] 単一半導体を用いた新ソースへテロ構造の検討:(I)緩和Si/歪Siへテロ構造2009
- Author(s)
  水野智久
- Organizer
  応用物理学会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21560371
[Presentation] Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors using Ion Implantation Induced Relaxation Technique of Strained-Substrates2009
- Author(s)
  T.Mizuno, N.Mizoguchi, K.Tanimoto, T.Yamauchi, T.Tezuka, T.Sameshima
- Organizer
  SSDM
- Place of Presentation
  Sendai
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-20035014
[Presentation] 単一半導体を用いた新ソースヘテロ構造の検討:(I)緩和Si/歪Siヘテロ構造2009
- Author(s)
  水野智久, 溝口直樹, 谷本光太郎, 山内知明, 鮫島俊之
- Organizer
  応用物理学会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21560371
[Presentation] Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors using Ion Implantation Induced Relaxation Technique of Strained-Substrates2009
- Author(s)
  T. Mizuno
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  仙台
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-21560371
[Presentation] 単一半導体を用いた新ソースヘテロ構造の検討:(I)緩和Si/歪Siヘテロ構造2009
- Author(s)
  水野智久, 溝口直樹, 谷本光太郎, 山内知明, 鮫島俊之
- Organizer
  応用物理学会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-20035014
[Presentation] Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors using Ion Implantation Induced Relaxation Technique of Strained-Substrates2009
- Author(s)
  T.Mizuno, N.Mizoguchi, K.Tanimoto, T.Yamauchi, T.Tezuka, T.Sameshima
- Organizer
  SSDM
- Place of Presentation
  Sendai
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-21560371
[Presentation] ソースヘテロ素子構造の最適化実験2008
- Author(s)
  水野智久, 守山佳彦, 手塚勉, 杉山直治, 高木信一
- Organizer
  応物学会
- Place of Presentation
  中部大学
- Year and Date
  2008-09-14
- Data Source
  KAKENHI-PROJECT-20035014
[Presentation] Experimental Study of Single Source-Heterojunction MOS Transistors (SHOTs) Under Ouasi-Ballistic Transport2008
- Author(s)
  T. Mizuno, Y. Moriyama, T. Tezuka, N. Sugiyama, S. Takagi
- Organizer
  Symp. VLSI Tech
- Place of Presentation
  Honolulu, USA
- Year and Date
  2008-06-17
- Data Source
  KAKENHI-PROJECT-20035014
[Presentation] Experimental Study for Ballistic MOSFETs using Source-Heterojunction Band Offset Structures2008
- Author(s)
  T. Mizuno, T. Tezuka, N. Sugiyama, and S. Takagi
- Organizer
  NSC-JST Nano Device Workshop
- Place of Presentation
  Taipei, Taiwan
- Year and Date
  2008-07-31
- Data Source
  KAKENHI-PROJECT-20035014
[Presentation] 数nm-CMOS 素子用二次元Si 層の検討（VI）：閉じ込め効果の異方性のSi 膜厚依
- Author(s)
  永田祐介，中原雄太，青木孝，鮫島俊之，水野智久
- Organizer
  応用物理学会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-24560422
[Presentation] Physical Limitation of pn Junction in Two Dimensional Si Layers for Future CMOS
- Author(s)
  T. Mizuno, Y. Nakahara, Y. Nagata, Y. Suzuki, Y. Kubodera, Y. Shimizu, T. Aoki, and T. Sameshima
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  福岡ヒルトンホテル
- Data Source
  KAKENHI-PROJECT-24560422
[Presentation] Anisotropic Phonon-Confinement-Effects/Band-Structure-Modulation of Two-Dimensional Si Layers Fabricated on Silicon-on-Quartz Substrates
- Author(s)
  T. Mizuno, Y. Nagata, Y. Suzuki, Y. Nakahara, T. Tanaka, T. Aoki and T. Sameshima
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  福岡ヒルトンホテル
- Data Source
  KAKENHI-PROJECT-24560422
[Presentation] 数nm-CMOS素子用2次元Si層の検討（I）：フォノン閉じ込め効果の面方位/歪み依存性
- Author(s)
  中原雄太，永田祐介，青木孝，鮫島俊之，水野智久
- Organizer
  応用物理学会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24560422
[Presentation] 数nm-CMOS素子用二次元Si層の検討(III):量子的閉じ込め効果の異方性
- Author(s)
  永田祐介，中原雄太，青木孝，鮫島俊之，水野智久
- Organizer
  応用物理学会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-24560422
[Presentation] 数nm-CMOS 素子用二次元Si 層の検討（IV）：光学特性の変調効果
- Author(s)
  鈴木佑弥，中原雄太，永田祐介，青木孝，鮫島俊之，水野智久
- Organizer
  応用物理学会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-24560422
[Presentation] 数nm-CMOS素子用2次元Si層の検討（II）：バンド構造の変調効果
- Author(s)
  永田祐介，中原雄太，青木孝，鮫島俊之，水野智久
- Organizer
  応用物理学会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24560422
[Presentation] 数nm-CMOS素子用Si単原子層の検討（II）：フォトルミネッセンス特性
- Author(s)
  水野智久，戸部圭亮，丸山洋一，鮫島俊之
- Organizer
  応用物理学会
- Place of Presentation
  愛媛大学
- Data Source
  KAKENHI-PROJECT-24560422
[Presentation] 数nm-CMOS素子用二次元Si層の検討(V):高濃度不純物原子のバンド変調/フォノン閉じ込め効果への影響
- Author(s)
  中原雄太，永田祐介，鈴木佑弥，青木孝，鮫島俊之，水野智久
- Organizer
  応用物理学会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-24560422
[Presentation] Surface-Orientation/Strain Dependence of Quantum Confinement Effects　in Si Monolayers for Future CMOS Devices
- Author(s)
  T.Mizuno, K.Higa, Y.Nakajima, D.Urata, Y.Abe, H.Akamatsu,Y.Nagata, Y.Nakahara, Y.Sato, J.Takehi and T.Sameshima
- Organizer
  国際固体素子材料学会
- Place of Presentation
  京都国際会館
- Data Source
  KAKENHI-PROJECT-24560422
[Presentation] 数nm-CMOS素子用二次元Si層の検討(VII):量子的閉じ込め効果のドナー/アクセプター濃度依存性
- Author(s)
  中原雄太，永田祐介，鈴木佑弥，青木孝，鮫島俊之，水野智久
- Organizer
  応用物理学会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-24560422

1. SAMESHIMA Toshiyuki (30271597)

# of Collaborated Projects: 8 results

# of Collaborated Products: 76 results
2. HASUMI Masahiko (60261153)

# of Collaborated Projects: 2 results

# of Collaborated Products: 10 results

Mizuno Tomohisa 水野 智久

水野 智久 ミズノ トモヒサ

MIZUNO Tomohisa 水野 智久

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液体プロセスによる新規低温半導体表面及びカットエッジパッシベーション

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Research on behavior of the recombination defect of minority carriers depending on the internal built in potential in PN junctions

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Experimental study on two-dimensional silicon-cabide using hot-carbon-ion implantation techniquePrincipal Investigator

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study on high efficiency solar cell driven by metal workfunction

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Experimental study on two-dimensional siliconPrincipal Investigator

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Observation of defects induced by non thermal equilibrium processes and their control used by microwave absorption of free carriers

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Study on relaxed/strained semiconductor layer heterostructures fabricated by ion implantation induced relaxation technique of strained semiconductorsPrincipal Investigator

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ソースヘテロ構造を用いたバリスティック素子の基盤研究Principal Investigator

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[Journal Article] Passivation of cut edges and surfaces of crystalline silicon by heat treatment in liquid water2023

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[Journal Article] Passivation of cut edges of crystalline silicon by heat treatment in liquid water2023

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DOI

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[Journal Article] SiC quantum dot formation in SiO2 layer using double hot-Si+/C+-ion implantation technique2020

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NAID

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[Journal Article] SiC Quantum Dots in Si-Oxide Layer Fabricated by Double Hot-Si+/C+-Ion Implantation Technique2019

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[Journal Article] Si Surface Orientation Dependence of SiC Nano-Dot Formation in Hot-C+-Ion Implanted Bulk-Si Substrate2019

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[Journal Article] SiC nanodot formation in amorphous-Si and poly-Si substrates using a hot-C+-ion implantation technique2019

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Mizuno Tomohisa 水野智久

水野智久ミズノトモヒサ

MIZUNO Tomohisa 水野智久