Uematsu Masashi 植松真司

… Alternative Names

植松真司ウエマツマサシ

UEMATSU Masashi 植松真司

Less

Researcher Number	60393758
External Links
Affiliation (Current)	2025: 慶應義塾大学, 理工学研究科(矢上), 特任教授
Affiliation (based on the past Project Information) *help	2017 – 2019: 慶應義塾大学, 理工学研究科(矢上), 特任教授 2013 – 2014: 慶應義塾大学, 理工学研究科, 特任教授 2012: 慶應義塾大学, 理工学研究科, 教授 2007 – 2008: Keio University, 大学院・理工学研究科, 教授 2006: 慶應義塾大学, 大学院理工学研究科, 教授 2006: Keio University, Graduate School of Science and Technology, Professor (Non-Tenured), 大学院理工学研究科, 特別研究教授 2005: 日本電信電話株式会社NTT物性科学基礎研究所, 先端デバイス研究部, 主任研究員
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / Thin film/Surface and interfacial physical properties Except Principal Investigator Thin film/Surface and interfacial physical properties
Keywords	Principal Investigator シミュレーション / イオン注入 / ホウ素 / 拡散 / 不純物 / シリコン / 表面・界面物性 / 半導体超微細化 / 半導体物性 / 同位体 … More / フッ素 / 安定同位体 / 炭素 / マイクロ・ナのデバイス / 自己拡散 / シリコン酸窒化 / 計算物理 / マイクロ・ナノデバイス … More Except Principal Investigator dopants / boron / transistor / diffusion / silicon / 不純物拡酸 / 不純物拡散 / 点欠陥 / ゲート絶縁膜 / 自己拡散 / シリコン Less

Reduction of transient enhanced diffusion in Si by F co-implantationPrincipal Investigator
- Principal Investigator
  
  Uematsu Masashi
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Keio University
Diffusion control in silicon by co-implanted carbonPrincipal Investigator
- Principal Investigator
  
  UEMATSU Masashi
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Keio University
Control of Silicon Nanostructure Oxidation by Nitrogen DopingPrincipal Investigator
- Principal Investigator
  
  UEMATSU Masashi
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Keio University
Correlated diffusion of impurities and silicon in next-generation gate insulating film
- Principal Investigator
  
  ITOH Kohei
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Keio University

All 2019 2017 2014 2013 2008 2007 2006 2005 2004 Other

All Journal Article Presentation

[Journal Article] Simultaneous observation of the diffusion of self-atoms and co-implanted boron and carbon in silicon investigated by isotope heterostructures2014
- Author(s)
  Masashi Uematsu,　Kota Matsubara, and Kohei M. Itoh
- Journal Title
  
  Japanese Journal of Applies Physics
  
  Volume: 53 Issue: 7 Pages: 0713021-5
- DOI
  10.7567/jjap.53.071302
- NAID
  210000144160
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24560413
[Journal Article] Atomic-scale characterization of germanium isotopic multilayers by atom probe tomography2013
- Author(s)
  Y. Shimizu, H. Takamizawa, Y. Kawamura, M. Uematsu, T. Toyama, K. Inoue, E.. E.. Haller, K. M. Itoh, Y. Nagai
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 113 Issue: 2 Pages: 0261011-3
- DOI
  10.1063/1.4773675
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J08082, KAKENHI-PROJECT-22241024, KAKENHI-PROJECT-24560413, KAKENHI-PROJECT-24760246
[Journal Article] Accurate Determi-nation of the Intrinsic Diffusivities of Boron, Phosphorus, and Arsenic in Silicon : The Influence of SiO_2 Films2008
- Author(s)
  M. Naganawa, Y. Kawamura, Y. Shimizu, M. Uematsu, K. M. Itoh, H. Ito, M. Nakamura, H. Ishikawa, and Y. Oji
- Journal Title
  
  Jpn. J. Appl. Phys. 47
  
  Pages: 6205-6207
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360027
[Journal Article] Impact of oxidation-induced strain on microscopic processes related to oxidation reaction at the SiO_2/Si(100) interface2008
- Author(s)
  T. Akiyama, T. Ito, H. Kageshima, and M. Uematsu
- Journal Title
  
  Phys. Rev. B77, 115356
  
  Pages: 1-5
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360027
[Journal Article] Effect of the SiO_2/Si interface on self-diffusion in SiO_2 upon oxidation2008
- Author(s)
  Masashi Uematsu
- Journal Title
  
  Defect and Diffusion Forum 273
  
  Pages: 685-692
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360027
[Journal Article] Generation of excess Si species at Si/SiO_2 interface and their diffusion into SiO_2 during Si thermal oxidation2008
- Author(s)
  K. Ibano, K. M. Itoh, and M. Uematsu
- Journal Title
  
  J. Appl. Phys. 103, 026101
  
  Pages: 1-3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360027
[Journal Article] Effect of the SiO_2/Si interface on self-diffusion in SiO_2 upon oxidation2008
- Author(s)
  M. Uematsu, K. Ibano, and K. M. Itoh
- Journal Title
  
  Defect and Diffusion Forum 273-276
  
  Pages: 685-692
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360027
[Journal Article] Stress Dependence of Oxidation Reaction at SiO_2/Si Interfaces during Silicon Thermal Oxidation2008
- Author(s)
  T. Akiyama, H. Kageshima, M. Uematsu, and T. Ito
- Journal Title
  
  Jpn. J. Appl. Phys. 47
  
  Pages: 7089-7093
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360027
[Journal Article] Experimental Evidence of the Vacancy Mediated Silicon Self-Diffusion in Single Crystalline Silicon2007
- Author(s)
  Y.Shimizu, M.Uematsu, K.M.Itoh
- Journal Title
  
  Phys. Rev. Lett. 98
  
  Pages: 95901-95901
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360021
[Journal Article] Experimental Evidence of the Vacancy Mediated Silicon Self-Diffusion in Single Crystalline Silicon2007
- Author(s)
  Y.Shimizu, K.M.Itoh, M.Uematsu
- Journal Title
  
  Phys. Rev. Lett. 98
  
  Pages: 95901-95901
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360021
[Journal Article] Enhanced Oxygen Exchange near the Oxide/Silicon Interface during Silicon Thermal Oxidation2007
- Author(s)
  M. Uematsu, M. Gunji, M. Tsuchiya, and K. M. Itoh
- Journal Title
  
  Thin Solid Films 515
  
  Pages: 6596-6600
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360027
[Journal Article] Oxygen Self-Diffusion in Silicon Dioxide : Effect of the Si/SiO_2 Interface2006
- Author(s)
  M. Uematsu, M. Gunji, and K. M. Itoh
- Journal Title
  
  Defect and Diffusion Forum 258-260
  
  Pages: 554-561
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360027
[Journal Article] Observation of Si Emission during Thermal Oxidation of Si(001) with High-Resolution RBS2006
- Author(s)
  S.Hosoi, K.Nakajima, M.Suzuki, K.Kimura, Y.Shimizu, S.Fukatsu, K.M.Itoh, M.Uematsu, H.Kageshima, K.Shiraishi
- Journal Title
  
  Nuclear Instruments and Methods in Physics Research B 249
  
  Pages: 390-393
- Data Source
  KAKENHI-PROJECT-16360021
[Journal Article] Observation of Si Emission during Thermal Oxidation of Si(001) with High-Resolution RBS Nuclear Instruments and Methods in Physics2006
- Author(s)
  S.Hosoi, K.Nakajima, M.Suzuki, K.Kimura, Y.Shimizu, S.Fukatsu, K.M.Itoh, M.Uematsu, H.Kageshima, K.Shiraishi
- Journal Title
  
  Research B 249
  
  Pages: 390-393
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360021
[Journal Article] Enhanced Si and B Diffusion in Semiconductor-grade SiO_2 and the Effect of Strain on Diffusion2006
- Author(s)
  M.Uematsu, H.Kageshima, S.Fukatsu, K.M.Itoh, K.Shiraishi, M.Otani, A.Oshiyama
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 270-275
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360021
[Journal Article] Oxygen Self-Diffusion in Silicon Dioxide : Effect of the Si/SiO_2 Interface2006
- Author(s)
  Masashi Uematsu
- Journal Title
  
  Defect and Diffusion Forum 258-260
  
  Pages: 554-561
- Data Source
  KAKENHI-PROJECT-18360027
[Journal Article] SiO_2中の拡散に与えるSi/SiO_2界面の影響2005
- Author(s)
  深津茂人, 伊藤公平, 植松真司, 藤原聡, 影島博之, 高橋庸夫, 白石賢二
- Journal Title
  
  表面科学 26・5
  
  Pages: 249-254
- NAID
  10015700603
- Data Source
  KAKENHI-PROJECT-16360021
[Journal Article] SiO_2中の拡散に与えるSi/SiO_2界面の影響2005
- Author(s)
  深津茂人, 伊藤公平, 植松真司, 藤原聡, 影島博之, 高橋庸夫, 他
- Journal Title
  
  表面科学 26・5
  
  Pages: 249-254
- NAID
  10015700603
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360021
[Journal Article] Correlated Diffusion of Silicon and Boron in Thermally Grown SiO_22004
- Author(s)
  M.Uematsu, H.Kageshima, K.M.Itoh, K.Shiraish 他
- Journal Title
  
  Appl.Phys.Lett. 85
  
  Pages: 221-223
- Data Source
  KAKENHI-PROJECT-16360021
[Journal Article] Modeling of Si self-diffusion in SiO_2 : Effect of the Si/SiO_2 interface including time-dependent diffusivity2004
- Author(s)
  M.Uematsu, A.Fujiwara, H.Kageshima, Y.Takahashi, 他
- Journal Title
  
  Appl. Phys. Lett. 84・6
  
  Pages: 876-878
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360021
[Journal Article] Modeling of Si self-diffusion in SiO_2 : Effect of the Si/SiO_2 interface including time-dependent diffusivity2004
- Author(s)
  M.Uematsu, A.Fujiwara, S.Fukatsu, K.M.Itoh, 他
- Journal Title
  
  Appl.Phys.Lett. 84・6
  
  Pages: 876-878
- Data Source
  KAKENHI-PROJECT-16360021
[Journal Article] Simulation of Correlated Diffusion of Si and B in Thermally Grown SiO_22004
- Author(s)
  M.Uematsu, H.Kageshima, K.M.Itoh, K.Shiraish 他
- Journal Title
  
  J.Appl.Phys. 96
  
  Pages: 5513-5519
- Data Source
  KAKENHI-PROJECT-16360021
[Journal Article] The Effect of the Si/Si02 Interface on Silicon and Boron Diffusion in Thermally Grown SiO_22004
- Author(s)
  S.Fukatsu, K.M.Itoh, M.Uematsu, H.Kageshima, Y.Takahashi, K.Shiraishi
- Journal Title
  
  Jpn. J. Appl. Phys. 43
  
  Pages: 7837-7842
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360021
[Journal Article] The Effect of the Si/SiO_2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO_22004
- Author(s)
  S.Fukatsu, K.M.Itoh, M.Uematsu, H.Kageshima, 他
- Journal Title
  
  Jpn. J. Appl. Phys. 43
  
  Pages: 7837-7842
- NAID
  10014215041
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360021
[Journal Article] Correlated Diffusion of Silicon and Boron in Thermally Grown SiO_22004
- Author(s)
  M.Uematsu, H.Kageshima, Y.Takahashi, S.Fukatsu, 他
- Journal Title
  
  Appl. Phys. Lett. 85
  
  Pages: 221-223
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360021
[Journal Article] Simulation of Correlated Diffusion of Si and B in Thermally Grown SiO_22004
- Author(s)
  M.Uematsu, H.Kageshima, Y.Takahashi, S.Fukatsu, 他
- Journal Title
  
  J. Appl. Phys. 96
  
  Pages: 5513-5519
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360021
[Journal Article] The Effect of the Si/SiO_2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO_22004
- Author(s)
  S.Fukatsu, K.M.Itoh, M.Uematsu, K.Shiraishi 他
- Journal Title
  
  Jpn.J.Appl.Phys. 43
  
  Pages: 7837-7842
- NAID
  10014215041
- Data Source
  KAKENHI-PROJECT-16360021
[Journal Article] Correlated Diffusion of Silicon and Boron in Thermally Grown SiO_22004
- Author(s)
  M.Uematsu, H.Kageshima, Y.Takahashi, S.Fukatsu, K.M.Itoh, K.Shiraishi
- Journal Title
  
  Appl. Phys. Lett. 85
  
  Pages: 221-223
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360021
[Journal Article] Modeling of Si Self-Diffusion in SiO_2 Effect of the Si/SiO_2 Interface Including Time-Dependent Diffusivity2004
- Author(s)
  M.Uematsu, A.Fujiwara, H.Kageshima, Y.Takahashi, S.Fukatsu, K.M.Itoh, K.Shiraishi, U.Gosele
- Journal Title
  
  Appl. Phys. Lett. 84-6
  
  Pages: 876-878
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360021
[Journal Article] Simulation of Correlated Diffusion of Si and B in Thermally Grown SiO_22004
- Author(s)
  M.Uematsu, H.Kageshima, Y.Takahashi, S.Fukatsu, K.M.Itoh, K.Shiraishi
- Journal Title
  
  J. Appl. Phys. 96
  
  Pages: 5513-5519
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360021
[Presentation] プリアモルファス化Si中のフッ素のホウ素拡散抑制2019
- Author(s)
  木我亮太郎，植松真司, 伊藤公平
- Organizer
  2019年秋応用物理学会
- Data Source
  KAKENHI-PROJECT-17K06397
[Presentation] Simultaneous observation of the diffusion of self-atoms and co-implanted boron and fluorine in pre-amorphized silicon investigated by isotope heterostructures2017
- Author(s)
  Ryotaro Kiga, Masashi Uematsu, Kohei M. Itoh
- Organizer
  29th International Conference on Defects in Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06397
[Presentation] シリコン同位体周期構造を用いた共注入フッ素・ホウ素と自己拡散の同時観測2017
- Author(s)
  木我亮太郎，植松真司, 伊藤公平
- Organizer
  2017年秋応用物理学会
- Data Source
  KAKENHI-PROJECT-17K06397
[Presentation] Defect Studies for the Development of Nano-scale Silicon Diffusion Simulators2013
- Author(s)
  Masashi Uematsu
- Organizer
  3rd Annual World Congress of Science and Technology
- Place of Presentation
  Xian, China
- Invited
- Data Source
  KAKENHI-PROJECT-24560413
[Presentation] Effect of the SiO_2/Si interface on self-diffusion in SiO_2 upon oxidation2007
- Author(s)
  M. Uematsu
- Organizer
  3rd International Conference on Diffusion in Solids and Liquids
- Place of Presentation
  アルガルブ(ポルトガル)
- Year and Date
  2007-07-05
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] Si熱酸化における酸化膜中のSi自己拡散促進のシミュレーション2007
- Author(s)
  植松真司
- Organizer
  2007年秋季第68回応用物理学学術講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] Si熱酸化中の界面近傍におけるSi自己拡散の促進2007
- Author(s)
  植松真司
- Organizer
  第54回応用物理学関係連合講演会
- Place of Presentation
  青山学院大学
- Year and Date
  2007-03-27
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] Si熱酸化における酸化膜中のSi自己拡散促進のシミュレーション2007
- Author(s)
  植松真司
- Organizer
  第68回応用物理学学術講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] Enhanced Oxygen Self-Diffusion in SiO_2 during Si Thermal Oxidation : Effect of the SiO_2/Si Interface2006
- Author(s)
  M. Uematsu
- Organizer
  2006 International Workshop on Dielectric Thin Films for Future ULSI Devices
- Place of Presentation
  川崎
- Year and Date
  2006-11-09
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] SiC表面における酸化初期での反応過程に関する理論的検討
- Author(s)
  伊藤綾子, 秋山亨, 中村浩次, 伊藤智徳, 影島博之, 植松真司, 白石賢二
- Organizer
  第62回応用物理学春季学術講演会
- Place of Presentation
  東海大学 (神奈川県平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24560413
[Presentation] Initial reaction processes on SiC surfaces during thermal oxidation: A first-principles study
- Author(s)
  Ayako Ito, Toru Akiyama, Koichi Nakamura, Tomonori Ito, Kenji Shiraishi, Hiroyuki Kageshiama, and Masashi Uematsu
- Organizer
  56th Electronic Materials Conference
- Place of Presentation
  Santa Barbara （USA）
- Year and Date
  2014-06-25 – 2014-06-27
- Data Source
  KAKENHI-PROJECT-24560413
[Presentation] Strain-enhanced diffusion originated from end-of-range defects
- Author(s)
  Taiga Isoda, Masashi Uematsu, and Kohei M. Itoh
- Organizer
  7th Forum on the Science and Technology of Silicon Materials
- Place of Presentation
  浜松アクトシティ（静岡県浜松市）
- Year and Date
  2014-10-19 – 2014-10-22
- Data Source
  KAKENHI-PROJECT-24560413
[Presentation] SiC熱酸化過程でのSiO2膜におけるカーボンオキサイド拡散機構の理論的検討
- Author(s)
  秋山亨、中村浩次、伊藤智徳、影島博之、植松真司
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24560413
[Presentation] Interfacial Analysis of Arsenic Ion-Implanted Germanium Isotopic Multilayer Structures Studied by Atom Probe Tomography
- Author(s)
  Yasuo Shimizu, Hiroshi Takamizawa, Yoko Kawamura, Masashi Uematsu, 他5名
- Organizer
  Atom Probe Tomography and Microscopy 2014
- Place of Presentation
  Stuttgart （Germany）
- Year and Date
  2014-08-31 – 2014-09-04
- Data Source
  KAKENHI-PROJECT-24560413
[Presentation] Observation of Si self-diffusion enhanced by the strain originated from end-of-range defects using isotope multilayers
- Author(s)
  Taiga Isoda, Masashi Uematsu, and Kohei M. Itoh
- Organizer
  International Conference on Diffusion in Materials 2014
- Place of Presentation
  Munster （Germany）
- Year and Date
  2014-08-17 – 2014-08-22
- Data Source
  KAKENHI-PROJECT-24560413
[Presentation] Si同位体周期構造を用いたend-of-range欠陥に起因する歪みによるSi 自己拡散増速の観測
- Author(s)
  磯田大河、植松真司、伊藤公平
- Organizer
  第75回応用物理学秋季学術講演会
- Place of Presentation
  北海道大学 (北海道札幌市）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24560413
[Presentation] Theoretical Investigations for Initial Oxidation Processes on SiC Surfaces
- Author(s)
  Ayako Ito, Toru Akiyama, Koichi Nakamura, Tomonori Ito, Kenji Shiraishi, Hiroyuki Kageshiama, and Masashi Uematsu
- Organizer
  7th International Symposium on Surface Science
- Place of Presentation
  くにびきメッセ（島根県松江市）
- Year and Date
  2014-11-02 – 2014-11-06
- Data Source
  KAKENHI-PROJECT-24560413
[Presentation] 4H-SiC/SiO2界面における酸化反応過程に関する理論的検討
- Author(s)
  秋山亨, 伊藤綾子,中村浩次, 伊藤智徳, 影島博之, 植松真司, 白石賢二
- Organizer
  第62回応用物理学春季学術講演会
- Place of Presentation
  東海大学 (神奈川県平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24560413

1. ITO Kohei (30276414)

# of Collaborated Projects: 2 results

# of Collaborated Products: 23 results
2. KAGESHIMA Hiroyuki (70374072)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
3. WATANABE Takanobu (00367153)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. SHIRAISHI Kenji (20334039)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. AKIYAMA Toru (40362363)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results

Uematsu Masashi 植松 真司

植松 真司 ウエマツ マサシ

UEMATSU Masashi 植松 真司

Research Projects

Research Products

Co-Researchers

Reduction of transient enhanced diffusion in Si by F co-implantationPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Diffusion control in silicon by co-implanted carbonPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Control of Silicon Nanostructure Oxidation by Nitrogen DopingPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Correlated diffusion of impurities and silicon in next-generation gate insulating film

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Simultaneous observation of the diffusion of self-atoms and co-implanted boron and carbon in silicon investigated by isotope heterostructures2014

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Atomic-scale characterization of germanium isotopic multilayers by atom probe tomography2013

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Accurate Determi-nation of the Intrinsic Diffusivities of Boron, Phosphorus, and Arsenic in Silicon : The Influence of SiO_2 Films2008

Author(s)

Journal Title

Data Source

[Journal Article] Impact of oxidation-induced strain on microscopic processes related to oxidation reaction at the SiO_2/Si(100) interface2008

Author(s)

Journal Title

Data Source

[Journal Article] Effect of the SiO_2/Si interface on self-diffusion in SiO_2 upon oxidation2008

Author(s)

Journal Title

Data Source

[Journal Article] Generation of excess Si species at Si/SiO_2 interface and their diffusion into SiO_2 during Si thermal oxidation2008

Author(s)

Journal Title

Data Source

[Journal Article] Effect of the SiO_2/Si interface on self-diffusion in SiO_2 upon oxidation2008

Author(s)

Journal Title

Data Source

[Journal Article] Stress Dependence of Oxidation Reaction at SiO_2/Si Interfaces during Silicon Thermal Oxidation2008

Author(s)

Journal Title

Data Source

[Journal Article] Experimental Evidence of the Vacancy Mediated Silicon Self-Diffusion in Single Crystalline Silicon2007

Author(s)

Journal Title

Description

Data Source

[Journal Article] Experimental Evidence of the Vacancy Mediated Silicon Self-Diffusion in Single Crystalline Silicon2007

Author(s)

Journal Title

Description

Data Source

[Journal Article] Enhanced Oxygen Exchange near the Oxide/Silicon Interface during Silicon Thermal Oxidation2007

Author(s)

Journal Title

Data Source

[Journal Article] Oxygen Self-Diffusion in Silicon Dioxide : Effect of the Si/SiO_2 Interface2006

Uematsu Masashi 植松真司

植松真司ウエマツマサシ

UEMATSU Masashi 植松真司