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Nakano Yoshitaka  中野 由崇

… Alternative Names

NAKANO Yoshitaka  中野 由崇

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Researcher Number 60394722
Other IDs
  • ORCIDhttps://orcid.org/0000-0002-7259-3509
Affiliation (Current) 2025: 中部大学, 工学部, 教授
Affiliation (based on the past Project Information) *help 2014 – 2023: 中部大学, 工学部, 教授
2017: 中部大学, 総合工学研究所, 教授
2016: 中部大学, 工学部電子情報工学科, 教授
2014: 中部大学, 総合工学研究所
2010 – 2013: 中部大学, 総合工学研究所, 准教授
2012: 中部大学, 付置研究所, 准教授
Review Section/Research Field
Principal Investigator
Electronic materials/Electric materials / Basic Section 21050:Electric and electronic materials-related
Except Principal Investigator
Electronic materials/Electric materials / Thin film/Surface and interfacial physical properties
Keywords
Principal Investigator
欠陥準位 / 電流コラプス / スイッチング特性 / AlGaN/GaNヘテロ構造 / 炭素 / MOCVD結晶成長 / フォトルミネッセンス / 固有欠陥準位 / 次世代パワー半導体 / 真空中アニール … More / フォトルミネッセンス計測 / 光容量過渡分光計測 / ガリウム空孔 / 酸素空孔 / イオン照射 / 酸化ガリウム / イオン衝撃 / ノーマリーオフ / パワー半導体 / N空孔 / Ga空孔 / CF4 / Mgアクセプター / Ar / プラズマイオン / 光容量過渡分光法 / 電気的ダメージ / プラズマイオン衝撃 / p型GaN / パワーデバイス / Si基板上AlGaN/GaNヘテロ構造 / 炭素アクセプター / 炭素ドーピング / SiC層 / 熱的安定性 / ターンオン・スイッチング特性 / 3C-SiC層 / Si基板 / ショットキーダイオード / 有機金属気相成長 / デバイス・スイッチング特性 / デバイス・スイッチング特性 / GaNバッファ層 / MOCVD / イエローバンド / DLOS / フォトキャパシタンス / 残留炭素 / 結晶成長 / 半導体欠陥準位 / 電子・電気材料 / 結晶工学 / 半導体物性 / 窒化物半導体 / 電気・電子材料 … More
Except Principal Investigator
窒化物半導体 / 界面 / 水素 / GaN / イオンビーム / プラズマ / ドライエッチング / 軟X線吸収 / 欠陥 / 化合物半導体 / UV照射 / TiO2 / UV / ワイドギャップ半導体 / 紫外線照射 / プラズマエッチング / 絶縁膜 / 半導体デバイス / センサ / 窒化アルミニウム / ショットキー構造 / AlGaN / ヘテロ構造 / AlGaN/GaN / ヘテロ接合 / 電気・電子材料 Less
  • Research Projects

    (9 results)
  • Research Products

    (138 results)
  • Co-Researchers

    (10 People)
  •  次世代パワー半導体β-Ga2O3の固有欠陥準位の全容解明Principal Investigator

    • Principal Investigator
      中野 由崇
    • Project Period (FY)
      2022 – 2024
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 21050:Electric and electronic materials-related
    • Research Institution
      Chubu University
  •  Global Investigation of Electrical Damage Introduced into p-GaN Films by Plasma Ion BombardmentsPrincipal Investigator

    • Principal Investigator
      Nakano Yoshitaka
    • Project Period (FY)
      2019 – 2021
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 21050:Electric and electronic materials-related
    • Research Institution
      Chubu University
  •  Correlation between deep-level defects and turn-on switching characteristics in AlGaN/GaN hetero-structures grown on Si substratesPrincipal Investigator

    • Principal Investigator
      NAKANO Yoshitaka
    • Project Period (FY)
      2016 – 2018
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Chubu University
  •  Investigation on hydrogen interaction with nitride-based semiconductor metal/semiconductor interfaces

    • Principal Investigator
      Irokawa Yoshihiro
    • Project Period (FY)
      2014 – 2016
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      National Institute for Materials Science
  •  Elucidation of UV irradiation effect in plasma etching process of wide gap semiconductors

    • Principal Investigator
      Niibe Masahito
    • Project Period (FY)
      2014 – 2017
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Thin film/Surface and interfacial physical properties
    • Research Institution
      University of Hyogo
  •  Correlation between deep-level defects and turn-on switching characteristics in AlGaN/GaN hetero-structuresPrincipal Investigator

    • Principal Investigator
      NAKANO Yoshitaka
    • Project Period (FY)
      2013 – 2015
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Chubu University
  •  Hydrogen sensors using nitride-based semiconsuctor devices

    • Principal Investigator
      IROKAWA Yoshihiro
    • Project Period (FY)
      2011 – 2014
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      National Institute for Materials Science
  •  Band-gap states and quality analyses of AlGaN/GaN hetero-structuresPrincipal Investigator

    • Principal Investigator
      NAKANO Yoshitaka
    • Project Period (FY)
      2010 – 2012
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Chubu University
  •  Research on nitride based semiconductor power devices

    • Principal Investigator
      IROKAWA Yoshihiro
    • Project Period (FY)
      2009 – 2010
    • Research Category
      Grant-in-Aid for Young Scientists (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      National Institute for Materials Science

All 2024 2023 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 Other

All Journal Article Presentation Book Patent

  • [Book] GaNパワーデバイスの技術展開 第4章第2節「AlGaN/GaNヘテロ構造の欠陥準位評価」2012

    • Author(s)
      中野由崇 (分担執筆)
    • Publisher
      S&T出版
    • Data Source
      KAKENHI-PROJECT-22560309
  • [Book] AlGaN/GaNヘテロ構造の欠陥準位評価2012

    • Author(s)
      中野由崇
    • Publisher
      S&T出版
    • Data Source
      KAKENHI-PROJECT-22560309
  • [Journal Article] Evaluation of defect density in bulk gallium nitrides by photothermal deflection spectroscopy and steady-state photocapacitance methods2024

    • Author(s)
      Sumiya Masatomo、Fujikura Hajime、Nakano Yoshitaka、Yashiro Shuhei、Koide Yasuo、Honda Tohru
    • Journal Title

      Journal of Crystal Growth

      Volume: 635 Pages: 127701-127701

    • DOI

      10.1016/j.jcrysgro.2024.127701

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-22K04206
  • [Journal Article] Plasma-assisted annealing of Pt-doped rutile TiO2 nanoparticles for enhanced decomposition and bacterial inactivation under general lighting2024

    • Author(s)
      Kawakami Retsuo、Makino Yuta、Yanagiya Shin-ichiro、Shirai Akihiro、Niibe Masahito、Nakano Yoshitaka
    • Journal Title

      Journal of Vacuum Science & Technology B

      Volume: 42 Issue: 1 Pages: 012203-012203

    • DOI

      10.1116/6.0003101

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-22K04206
  • [Journal Article] Photocatalytic Activity Enhancement of Anatase/Rutile‐Mixed Phase TiO2 Nanoparticles Annealed with Low‐Temperature O2 Plasma2021

    • Author(s)
      Kawakami Retsuo、Mimoto Yuki、Yanagiya Shin-ichiro、Shirai Akihiro、Niibe Masahito、Nakano Yoshitaka、Mukai Takashi
    • Journal Title

      physica status solidi (a)

      Volume: 218 Issue: 24 Pages: 2100536-2100536

    • DOI

      10.1002/pssa.202100536

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K04497, KAKENHI-PROJECT-20K03917
  • [Journal Article] Effects of air-based nonequilibrium atmospheric pressure plasma jet treatment on characteristics of polypropylene film surfaces2020

    • Author(s)
      Kawakami Retsuo、Yoshitani Yuki、Mitani Kimiaki、Niibe Masahito、Nakano Yoshitaka、Azuma Chisato、Mukai Takashi
    • Journal Title

      Applied Surface Science

      Volume: 509 Pages: 144910-144910

    • DOI

      10.1016/j.apsusc.2019.144910

    • NAID

      120007175672

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K04497
  • [Journal Article] Effects of nonequilibrium atmospheric-pressure O2 plasma-assisted annealing on anatase TiO2 nanoparticles2020

    • Author(s)
      Kawakami Retsuo、Yoshitani Yuki、Shirai Akihiro、Yanagiya Shin-ichiro、Koide Hirofumi、Mimoto Yuki、Kajikawa Kosuke、Niibe Masahito、Nakano Yoshitaka、Azuma Chisato、Mukai Takashi
    • Journal Title

      Applied Surface Science

      Volume: 526 Pages: 146684-146684

    • DOI

      10.1016/j.apsusc.2020.146684

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04497, KAKENHI-PROJECT-20K03917
  • [Journal Article] Characterisation of defects in p-type 4H-, 6H- and 3C-SiC epilayers grown on SiC substrates2019

    • Author(s)
      Kato Masashi、Ichikawa Naoto、Nakano Yoshitaka
    • Journal Title

      Materials Letters

      Volume: 254 Pages: 96-98

    • DOI

      10.1016/j.matlet.2019.07.043

    • Data Source
      KAKENHI-PROJECT-19K04497
  • [Journal Article] Effects of ultraviolet wavelength and intensity on AlGaN thin film surfaces irradiated simultaneously with CF4 plasma and ultraviolet2019

    • Author(s)
      Kawakami Retsuo、Niibe Masahito、Nakano Yoshitaka、Yanagiya Shin-ichiro、Yoshitani Yuki、Azuma Chisato、Mukai Takashi
    • Journal Title

      Vacuum

      Volume: 159 Pages: 45-50

    • DOI

      10.1016/j.vacuum.2018.10.017

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16K06276
  • [Journal Article] Characteristics of TiO 2 thin films surfaces treated by O 2 plasma in dielectric barrier discharge with the assistance of external heating2018

    • Author(s)
      Kawakami Retsuo、Niibe Masahito、Nakano Yoshitaka、Araki Yuma、Yoshitani Yuki、Azuma Chisato、Mukai Takashi
    • Journal Title

      Vacuum

      Volume: 152 Pages: 265-271

    • DOI

      10.1016/j.vacuum.2018.03.051

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Journal Article] Deep-level defects in homoepitaxial p-type GaN2018

    • Author(s)
      Nakano Yoshitaka
    • Journal Title

      Journal of Vacuum Science & Technology A

      Volume: 36 Issue: 2 Pages: 023001-023001

    • DOI

      10.1116/1.5017867

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16K06276
  • [Journal Article] Generation of electrical damage in n-GaN films following treatment in a CF4 plasma2017

    • Author(s)
      Nakano Yoshitaka, Kawakami Retsuo, Niibe Masahito
    • Journal Title

      Applied Physics Express

      Volume: 10 Issue: 11 Pages: 116201-116201

    • DOI

      10.7567/apex.10.116201

    • NAID

      210000136023

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16K06276, KAKENHI-PROJECT-26390066
  • [Journal Article] Characteristics of N2 and O2 Plasma-Induced Damages on AlGaN Thin Film Surfaces2017

    • Author(s)
      Kawakami Retsuo、Niibe Masahito、Nakano Yoshitaka、Tanaka Ryo、Azuma Chisato、Mukai Takashi
    • Journal Title

      physica status solidi (a)

      Volume: 214 Issue: 11 Pages: 1700393-1700393

    • DOI

      10.1002/pssa.201700393

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16K06276, KAKENHI-PROJECT-26390066
  • [Journal Article] Electrical Investigation of Turn-On Capacitance Recovery Characteristics in Carbon-Doped AlGaN/GaN Hetero-Structures Grown on Si Substrates2017

    • Author(s)
      Nakano Yoshitaka
    • Journal Title

      ECS Journal of Solid State Science and Technology

      Volume: 6 Issue: 12 Pages: P828-P831

    • DOI

      10.1149/2.0191712jss

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16K06276
  • [Journal Article] Electrical Characterization of β-Ga2O3 Single Crystal Substrates2017

    • Author(s)
      Nakano Yoshitaka
    • Journal Title

      ECS Journal of Solid State Science and Technology

      Volume: 6 Issue: 9 Pages: P615-P617

    • DOI

      10.1149/2.0181709jss

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16K06276
  • [Journal Article] Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates2017

    • Author(s)
      Masatomo Sumiya, Naoki Toyomitsu, Yoshitaka Nakano, Jianyu Wang, Yoshitomo Harada, Liwen Sang, Takashi Sekiguchi, Tomohiro Yamaguchi, Tohru Honda
    • Journal Title

      APL Materials

      Volume: 5 Issue: 1 Pages: 0161051-8

    • DOI

      10.1063/1.4974935

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K06276
  • [Journal Article] AlGaN surfaces etched by CF4 plasma with and without the assistance of near-ultraviolet irradiation2017

    • Author(s)
      Retsuo Kawakami, Masahito Niibe, Yoshitaka Nakano, Takashi Mukai
    • Journal Title

      Vacuum

      Volume: 136 Pages: 28-35

    • DOI

      10.1016/j.vacuum.2016.11.016

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K06276, KAKENHI-PROJECT-26390066
  • [Journal Article] Damage Characteristics of <i>n</i>-GaN Crystal Etched with N<sub>2 </sub>Plasma by Soft X-Ray Absorption Spectroscopy2016

    • Author(s)
      M. Niibe, T. Kotaka, R. Kawakami, Y. Nakano, T. Mukai
    • Journal Title

      e-J. Surf. Sci. Nanotechnol.

      Volume: 14 Issue: 0 Pages: 9-13

    • DOI

      10.1380/ejssnt.2016.9

    • NAID

      130005120933

    • ISSN
      1348-0391
    • Language
      English
    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Journal Article] Surface Analysis of AlGaN Treated with CF<sub>4 </sub>and Ar Plasma Etching2015

    • Author(s)
      S. Hirai, M. Niibe, R. Kawakami, T. Shirahama, Y. Nakano, T. Mukai
    • Journal Title

      e-J. Surf. Sci. Nanotechnol.

      Volume: 13 Issue: 0 Pages: 481-487

    • DOI

      10.1380/ejssnt.2015.481

    • NAID

      130005114535

    • ISSN
      1348-0391
    • Language
      English
    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Journal Article] Comparison between AiGaN surfaces etchtched bycarbon tetrafluoride and argon plasmas: Effect of the fluorine impurities incorporated in the surface2015

    • Author(s)
      R. Kawakami, M. Niibe, Y. Nakano, T. Shirahama, S. Hirai, T. Mukai
    • Journal Title

      Vacuum

      Volume: 119 Pages: 264-269

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Journal Article] Recovery of x-ray absorption spectral profile in etched TiO2 thin films2015

    • Author(s)
      1)Keiji Sano, Masahito Niibe, Retsuo Kawakami and Yoshitaka Nakano
    • Journal Title

      J. Vac. Sci. Technol.

      Volume: A33 Pages: 031403-031403

    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Journal Article] Ar+-irradiation-induced damage in hydride vapor-phase epitaxy GaN films2015

    • Author(s)
      Y. Nakano, D. Ogawa, K. Nakamura, R. Kawakami, M. Niibe
    • Journal Title

      J. Vac. Sci. Technol. A

      Volume: 33 Issue: 4 Pages: 0314031-5

    • DOI

      10.1116/1.4922593

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26390066, KAKENHI-PROJECT-25420300
  • [Journal Article] Electrical Investigation of Deep-Level Defects Induced in AlGaN/GaN Heterostrucutures by CF4 Plasma Treatments2015

    • Author(s)
      2)R. Kawakami, Y. Nakano, M. Niibe, T. Shirahama, and T. Mukai
    • Journal Title

      ECS Solid State Letters

      Volume: 4 Pages: 36-38

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Journal Article] Deep-level defects and turn-on capacitance recovery characteristics in AlGaN/GaN heterostructures2015

    • Author(s)
      Yoshitaka Nakanoa, Yoshihiro Irokawa and Masatomo Sumiya
    • Journal Title

      Philosophical Magazine Letters

      Volume: 95 Issue: 6 Pages: 333-339

    • DOI

      10.1080/09500839.2015.1062154

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26420286, KAKENHI-PROJECT-25420300
  • [Journal Article] Electrical Investigation of Deep-Level Defects Introduced in AlGaN/GaN Heterostructures by CF4 Plasma Treatments2015

    • Author(s)
      R. Kawakamia, Y. Nakano, M. Niibe, T. Shirahama, T. Mukai
    • Journal Title

      ECS Solid State Letters

      Volume: 4 Issue: 4 Pages: 36-38

    • DOI

      10.1149/2.0011505ssl

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25420300
  • [Journal Article] Comparison between AlGaN Surfaces Etched by Carbon Tetrafluoride and Argon Plasmas: Effect of the Fluorine Impurities Incorporated in the Surface2015

    • Author(s)
      R. Kawakami, M. Niibe, Y. Nakano, T. Shirahama, S. Hirai, T. Mukai
    • Journal Title

      Vacuum

      Volume: 119 Pages: 264-269

    • DOI

      10.1016/j.vacuum.2015.06.002

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25420300
  • [Journal Article] Optical and electrical investigation of Ar+-irradiated GaN2014

    • Author(s)
      Miao-Gen Chen, Keiji Nakamura, Yan-Qing Qiu, Daisuke Ogawa, Retsuo Kawakami, Masahito Niibe, Yoshitaka Nakano
    • Journal Title

      Applied Physics Express

      Volume: 7 Issue: 11 Pages: 111003-111003

    • DOI

      10.7567/apex.7.111003

    • NAID

      210000137269

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25420300, KAKENHI-PROJECT-26390066
  • [Journal Article] Damage Characteristics of n-GaN Thin Film Surfaces Etched by Ultraviolet Light-Assisted Helium Plasmas2014

    • Author(s)
      5)R. Kawakami, M. Niibe, Y. Nakano, T. Shirahama, K. Aoki, K. Oba, M. Takabatake, T. Mukai
    • Journal Title

      Thin Solid Films

      Volume: 570 Pages: 81-86

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Journal Article] Carbon-Related Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures2014

    • Author(s)
      Yoshitaka Nakano, Yoshihiro Irokawa, Masatomo Sumiya, Yasunobu Sumida, Shuichi Yagi, Hiroji Kawai
    • Journal Title

      Materials Research Society Symposium Proceedings

      Volume: 1635 Pages: 1-6

    • DOI

      10.1557/opl.2014.102

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25420300
  • [Journal Article] Steady-state photo-capacitance spectroscopy investigation of Carbon-related deep-level defects in AlGaN/GaN hetero-structures grown by MOCVD2013

    • Author(s)
      Yoshitaka Nakano
    • Journal Title

      Trends in Applied Spectroscopy

      Volume: 9 Pages: 59-65

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25420300
  • [Journal Article] Correlation between deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structures2013

    • Author(s)
      Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi,H.Kawai
    • Journal Title

      Journal of Applied Physics

      Volume: 112(10) Issue: 10 Pages: 106103-106103

    • DOI

      10.1063/1.4767367

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22560309
  • [Journal Article] Investigation of Band-Gap States in AlGaN/GaN Hetero-Structures with Different Growth Conditions of GaN Buffer Layers2012

    • Author(s)
      Yoshitaka Nakano
    • Journal Title

      Materials Research Society Symposium Proceedings

      Volume: VOL.1396

    • DOI

      10.1557/opl.2012.14

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22560309
  • [Journal Article] Effect of Carbon Impurity Incorporation on Band-Gap States in AlGaN/GaN Hetero-Structures2011

    • Author(s)
      Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi,H.Kawai
    • Journal Title

      Electrochemical and Solid-State Letters

      Volume: 15(2) Issue: 2 Pages: H44-H46

    • DOI

      10.1149/2.025202esl

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22560309
  • [Journal Article] Photo-capacitance spectroscopy study of deep-level defects in free-standing n-GaN substrates using transparent conductive polymer Schottky contacts2011

    • Author(s)
      Y.Nakano, M.Lozac'h, N.Matsuki, K.Sakoda, M.Sumiya
    • Journal Title

      Journal of Vaccum Science & Teclmology B

      Volume: VOL.29

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22560309
  • [Journal Article] Photo-Capacitance Spectroscopy Investigation of Deep-Level Defects in AlGaN/GaN hetero-structures with different current collapses2010

    • Author(s)
      Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi,H.Kawai
    • Journal Title

      Physica Status Solidi (RRL)

      Volume: 4(12) Issue: 12 Pages: 374-376

    • DOI

      10.1002/pssr.201004421

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22560309
  • [Journal Article] Photo-capacitance spectroscopy investigation of deep-level defects in AlGaN/GaN hetero-structures with different current collapses2010

    • Author(s)
      Yoshitaka Nakano
    • Journal Title

      Phys.Status Solidi RRL

      Volume: 4 Pages: 374-376

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21760241
  • [Journal Article] Photo-Capacitance Spectroscopy investigation of Deep-Level Defects in AlGaN/GaN hetero-structures with different current collapses2010

    • Author(s)
      Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, H.Kawai
    • Journal Title

      physica status solidi (Rapid Research Letters)

      Volume: VOL.4 Pages: 374-376

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22560309
  • [Journal Article] Photo-capacitance spectroscopy investigation of deep-level defects in AlGaN/GaN hetero-structures with different current collapses Phys.2010

    • Author(s)
      Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, H.Kawai
    • Journal Title

      Status Solidi RRL 4

      Pages: 374-376

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21760241
  • [Journal Article] Low-frequency capacitance-voltage study of hydrogen interaction with Pt-AlGaN/GaN Schottky barrier diodes, Phys.2009

    • Author(s)
      Y.Irokawa, N.Matsuki, M.Sumiya, Y.Sakuma, T.Sekiguchi, T.Chikyo, Y.Sumida, Y.Nakano
    • Journal Title

      Status Solidi RRL 3

      Pages: 266-268

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21760241
  • [Patent] ワイドギャップ半導体のバンドギャップ電子物性測定方法及び測定装置2012

    • Inventor(s)
      中野由崇、中村圭二
    • Industrial Property Rights Holder
      同上
    • Industrial Property Number
      2012-168032
    • Filing Date
      2012-07-30
    • Data Source
      KAKENHI-PROJECT-22560309
  • [Patent] ワイドギャップ半導体のバンドギャップ電子物性測定方法及び測定装置2012

    • Inventor(s)
      中野由崇、中村圭二
    • Industrial Property Rights Holder
      中野由崇、中村圭二
    • Industrial Property Rights Type
      特許
    • Filing Date
      2012-07-30
    • Data Source
      KAKENHI-PROJECT-22560309
  • [Presentation] m面GaN薄膜の表面処理による化学結合状態とCV特性変化2024

    • Author(s)
      角谷 正友、津田 康孝、隅田 真人、中野 由崇、吉越 章隆
    • Organizer
      第71回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-22K04206
  • [Presentation] 光容量分光法によるワイドギャップ半導体の欠陥準位評価2024

    • Author(s)
      中野 由崇
    • Organizer
      応用物理学会 結晶工学分科会 第28回結晶工学セミナー「ワイドギャップ半導体の先端・実践評価技術」
    • Invited
    • Data Source
      KAKENHI-PROJECT-22K04206
  • [Presentation] Real-time observation of oxidation process on GaN surfaces by x-ray photoelectron spectroscopy2023

    • Author(s)
      Masatomo Sumiya, Yasutaka Tsuda, Masato Sumita, Yoshitaka Nakano, Akitaka Yoshigoe
    • Organizer
      14th International Conference on Nitride Semiconductors (ICNS-14)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-22K04206
  • [Presentation] Photocatalytic Activity Enhancement of Titanium Dioxide Nanoparticles via High-Pressure Annealing with Polyethylene Glycol2023

    • Author(s)
      Takumi Matsumoto, Shin-ichiro Yanagiya, Masahito Niibe, Yoshitaka Nakano, Retsuo Kawakami
    • Organizer
      International Symposium of Dry Process 2023
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-22K04206
  • [Presentation] Atmospheric-Pressure Low-Temperature O2 Plasma-Assisted Annealing on Visible-Light-Induced Photocatalytic Activity of Pt-doped Rutile TiO2 Nanoparticles2022

    • Author(s)
      Yuta Makino, Retsuo Kawakami, Shin-ichiro Yanagiya, Masahito Niibe, Yoshitaka Nakano and Takashi Mukai
    • Organizer
      The 43rd International Symposium on Dry Process (DPS2022)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-22K04206
  • [Presentation] Polyethylene Glycol Doping Effects on Photocatalytic Activity of Anatase/Rutile-Mixed Phase TiO2 Nanoparticles2022

    • Author(s)
      Takumi Matsumoto, Retsuo Kawakami, Shin-ichiro Yanagiya, Masahito Niibe, Yoshitaka Nakano and Takashi Mukai
    • Organizer
      The 43rd International Symposium on Dry Process (DPS2022)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-22K04206
  • [Presentation] 高温度真空中アニール処理したb-Ga2O3(-201)単結晶の欠陥準位評価2022

    • Author(s)
      豊留 彬、中野 由崇
    • Organizer
      第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04497
  • [Presentation] 光熱偏向分光法によるGaNバルク評価2022

    • Author(s)
      角谷正友, 中野由崇, 小出康夫, 本田徹
    • Organizer
      第41回電子材料シンポジウム
    • Data Source
      KAKENHI-PROJECT-22K04206
  • [Presentation] Ar+イオン衝撃により p型 GaN に導入される電気的ダメージの UV 光照射効果2022

    • Author(s)
      豊留 彬、中野 由崇、川上 烈生、新部 正人
    • Organizer
      第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04497
  • [Presentation] Nonequilibrium Atmospheric-Pressure O2 Plasma-Assisted Annealing Effect on Photocatalytic Activity of Anatase/Rutile-Mixed Phase TiO2 Nanoparticles2021

    • Author(s)
      Mimoto Yuki、Kawakami Retsuo、Yanagiya Shin-ichiro、Masahito Niibe、Nakano Yoshitaka、Mukai Takashi
    • Organizer
      42nd International Symposium of Dry Process (DPS 2021)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04497
  • [Presentation] Electrical Investigation of Turn-On Capacitance Recovery Characteristics in Auto or External Carbon-doped AlGaN/GaN/SiC/Si2021

    • Author(s)
      Hiroki Suzuki、Shigeomi Hishiki、Keisuke Kawamura、Yoshitaka Nakano
    • Organizer
      12th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 13th International Conference on Plasma-Nano Technology & Science
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04497
  • [Presentation] Intrinsic Defect Investigation of n-Type b-Ga2O3 Single Crystals Treated by High-Temperature Annealing in Vacuum2021

    • Author(s)
      Toyotome Akira、Nakano Yoshitaka
    • Organizer
      The Eighth International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2021)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04497
  • [Presentation] Photobactericidal Activity of Anatase Titanium Dioxide Nanoparticles Annealed with the Assistance of Nonequilibrium Atmospheric-Pressure Oxygen Plasma2021

    • Author(s)
      Retsuo Kawakami、Mimoto Yuki、Shirai kihiro、Yanagiya Shin-ichiro、Niibe Masahito、Nakano Yoshitaka、Takashi Mukai
    • Organizer
      42nd International Symposium of Dry Process (DPS 2021)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04497
  • [Presentation] Annealing behavior of deep-level defects in unintentionally doped n-type b-Ga2O3 single crystal2021

    • Author(s)
      Yoshitaka Nakano、Akira Toyotome、Riku Suzuki、Yuki Yasuda
    • Organizer
      12th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 13th International Conference on Plasma-Nano Technology & Science
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04497
  • [Presentation] 高温度アニール処理したSiドープb-Ga2O3(010)単結晶の電気特性評価2021

    • Author(s)
      中野 由崇、豊留 彬、鈴木 陸、安田 優綺
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04497
  • [Presentation] Electrical Damage Introduced into p-GaN Films by Ar Plasma Treatments2021

    • Author(s)
      Akira Toyotome、Yoshitaka Nakano、Retsuo Kawakami、Masahito Niibe
    • Organizer
      12th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials 13th International Conference on Plasma-Nano Technology & Science
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04497
  • [Presentation] 大気圧低温O2プラズマ支援熱処理したアナターゼ/ルチル混晶型TiO2ナノ粒子の紫外/可視光触媒活性2021

    • Author(s)
      味元 勇樹、川上 烈生、柳谷 伸一郎、新部 正人、中野 由崇、向井 孝志
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04497
  • [Presentation] CF4プラズマ処理したp型GaNの電気的ダメージ評価2020

    • Author(s)
      中野 由崇、豊留 彬
    • Organizer
      第67回応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04497
  • [Presentation] Ar+イオン照射により生成するp型GaNの電気的ダメージ評価2019

    • Author(s)
      中野 由崇、豊留 彬
    • Organizer
      第80回応用物理学会 秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K04497
  • [Presentation] Deep-Level Defect Investigation of Si-Doped b-Ga2O3 Homoepitaxial Films Grown by Halide Vapor Phase Epitaxy2019

    • Author(s)
      Nakano Yoshitaka、Akira Toyotome
    • Organizer
      2019-edition of Compound Semiconductor Week (CSW2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04497
  • [Presentation] Electrical Damage Introduced into p-GaN Films by Ar Plasma Treatments2019

    • Author(s)
      Nakano Yoshitaka、Akira Toyotome
    • Organizer
      7th International Symposium on Organic and Inorganic Materials and Related Nanotechnologies (EM-NANO2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04497
  • [Presentation] 3C-SiC/Si基板上に作製したAlGaN/GaN/GaN:Cヘテロ構造のターンオン容量回復特性2019

    • Author(s)
      中野 由崇, 北原 功一, 大内 澄人, 生川 満久, 川村 啓介
    • Organizer
      第66回応用物理学会 秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K06276
  • [Presentation] AlGaN薄膜表面へのCF4プラズマ処理中に及ぼす紫外光同時照射効果2018

    • Author(s)
      川上 烈生, 芳谷 勇樹, 新部 正人, 中野 由崇, 東 知里, 向井 孝志
    • Organizer
      平成30年度電気関係学会 四国支部連合大会
    • Data Source
      KAKENHI-PROJECT-16K06276
  • [Presentation] HVPE法で結晶成長したb-Ga2O3ホモエピ膜の電気的評価2018

    • Author(s)
      中野由崇
    • Organizer
      第65回応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16K06276
  • [Presentation] TiO2 Thin Film Surfaces Treated by O2 Plasma in Dielectric Barrier Discharge with Assistance of Heat Treatment2017

    • Author(s)
      Retsuo Kawakami, Kengo Fujimoto, Masahito Niibe, Yuma Araki, Yoshitaka Nakano and Takashi Mukai
    • Organizer
      14th International Symp. Sputtering & Plasma Processes
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] Electrical Characterization of b-Ga2O3 Single Crystal Substrate2017

    • Author(s)
      Nakano Yoshitaka
    • Organizer
      The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K06276
  • [Presentation] Surface Structure Analysis of AlGaN Thin Films Damaged by Oxygen and Nitrogen Plasmas2017

    • Author(s)
      Masahito Niibe, Ryo Tanaka, Retsuo Kawakami, Yoshitaka Nakano and Takashi Muka
    • Organizer
      The 8th International Symposium on Surface Science (ISSS-8)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] Electrical Damage Introduced into n -GaN Films by CF4 Plasma Treatments2017

    • Author(s)
      Yoshitaka Nakano
    • Organizer
      9th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
    • Place of Presentation
      中部大学 (愛知県春日井市)
    • Year and Date
      2017-03-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K06276
  • [Presentation] TiO2 薄膜のプラズマ処理試料のXPS法による組成と触媒活性の相関2017

    • Author(s)
      荒木佑馬、新部正人、川上烈生、竹平徳崇、中野由崇
    • Organizer
      第30回日本放射光学会シンポジウム
    • Place of Presentation
      神戸芸術センター(兵庫県神戸市)
    • Year and Date
      2017-01-07
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] Bulk-Related Current Collapses in Carbon-Doped AlGaN/GaN/GaN:C Hetero-Structures Grown on Si Substrates2017

    • Author(s)
      Chikamatsu Akihito, Nakano Yoshitaka
    • Organizer
      The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K06276
  • [Presentation] Generation Behavior of Electrical Damage Introduced into n-GaN Films by CF4 Plasma Treatments2017

    • Author(s)
      Nakano Yoshitaka, Kawakami Retsuo, Niibe Masahito
    • Organizer
      The 29th International Conference on Defects in Semiconductors (ICDS2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K06276
  • [Presentation] Electrical Investigation of p-GaN Film Homo-Epitaxially Grown on Free-Standing GaN Substrate2017

    • Author(s)
      Nakano Yoshitaka
    • Organizer
      The 29th International Conference on Defects in Semiconductors (ICDS2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K06276
  • [Presentation] 光触媒TiO2薄膜への加熱を伴うO2 DBDプラズマ処理効果2017

    • Author(s)
      川上 烈生, 新部 正人, 中野 由崇, 芳谷 勇樹, 東 知里, 向井 孝志
    • Organizer
      平成29年度電気関係学会 四国支部連合大会
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] Generation Behavior of Electrical Damage Introduced into n-GaN Films by CF4 Plasma Treatments2017

    • Author(s)
      Yoshitaka Nakano, Retsuo Kawakami and Masahito Niibe
    • Organizer
      29th International Conf. on Defects in Semiconductors (ICDS)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] Electrical Investigation of Bulk-Related Current Collapses in AlGaN/GaN/GaN:C Hetero-Structures Grown on Si Substrates2017

    • Author(s)
      Nakano Yoshitaka, Chikamatsu Akihito
    • Organizer
      The 29th International Conference on Defects in Semiconductors (ICDS2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16K06276
  • [Presentation] 酸素および窒素プラズマ処理したAlGaN膜の表面分析2017

    • Author(s)
      田中良、新部正人、川上烈生、中野由崇、向井孝志
    • Organizer
      第30回日本放射光学会シンポジウム
    • Place of Presentation
      神戸芸術センター(兵庫県神戸市)
    • Year and Date
      2017-01-07
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] CF4プラズマ処理したn-GaN膜の電気的評価2016

    • Author(s)
      6) 中野由崇, 坂井佑輔, 新部正人, 川上烈生
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学大岡山キャンパス(東京都目黒区)
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] ガスソースMBE法により作製した3C-SiC(111)自立基板の電気的評価2016

    • Author(s)
      中野由崇、浅村英俊、大内澄人、生川満久、稲垣徹、川村啓介
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ (新潟県新潟市)
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-16K06276
  • [Presentation] CF4プラズマ処理したn-GaN 膜の電気的評価2016

    • Author(s)
      中野由崇, 坂井佑輔, 新部正人, 川上烈生
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-25420300
  • [Presentation] TiO2薄膜のプラズマ処理試料のXPS法による組成と触媒活性の相関2016

    • Author(s)
      荒木佑馬、竹平徳崇、新部正人、川上烈生、中野由崇
    • Organizer
      第52回X線分析討論会
    • Place of Presentation
      筑波大学東京キャンパス(東京都文京区)
    • Year and Date
      2016-10-26
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] Si基板上AlGaN/GaN/GaN:Cヘテロ構造のターンオン容量回復特性2016

    • Author(s)
      中野由崇、近松晃仁
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ (新潟県新潟市)
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-16K06276
  • [Presentation] CF4とArプラズマ処理したAlGaN膜の表面分析2016

    • Author(s)
      8) 平井翔大,新部正人,川上烈生,竹平徳崇,中野由崇,向井孝志
    • Organizer
      第29回日本放射光学会シンポジウム
    • Place of Presentation
      東京大学柏の葉キャンパス(千葉県柏市)
    • Year and Date
      2016-01-09
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] Electrical damage in n-GaN films treated by CF4 plasma2016

    • Author(s)
      Yoshitaka Nakano, Masahito Niibe and Retsuo Kawakami
    • Organizer
      International Symposium of Dry Process 2016
    • Place of Presentation
      北海道大学(北海道札幌市)
    • Year and Date
      2016-11-21
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] Effect of Ultraviolet Light-Assisted CF4 Plasma Irradiation on AlGaN Thin Film Surface2016

    • Author(s)
      Retsuo Kawakami, Masahito Niibe, Yoshitaka Nakano and Takashi Mukai
    • Organizer
      43rd International Symposium on Compound Semiconductors (ISCS2016)
    • Place of Presentation
      富山国際会議場(富山県富山市)
    • Year and Date
      2016-06-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] CF4プラズマ処理したn-GaN膜の電気的ダメージ2016

    • Author(s)
      中野由崇、新部正人、川上烈生
    • Organizer
      2016年真空・表面科学合同講演会
    • Place of Presentation
      名古屋国際会議場 (愛知県名古屋市)
    • Year and Date
      2016-11-29
    • Data Source
      KAKENHI-PROJECT-16K06276
  • [Presentation] Electrical Damage Investigation of n-GaN Films Treated by CF4 Plasma2016

    • Author(s)
      Yoshitaka Nakano, Masahito Niibe and Retsuo Kawakami
    • Organizer
      43rd International Symposium on Compound Semiconductors (ISCS2016)
    • Place of Presentation
      富山国際会議場(富山県富山市)
    • Year and Date
      2016-06-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] CF4とArプラズマで処理したAlGaN膜の表面分析2016

    • Author(s)
      平井翔大, 新部正人, 川上烈生, 竹平徳崇, 中野由崇, 向井孝志
    • Organizer
      第29回日本放射光学会年会 放射光科学合同シンポジウム (JSR2016)
    • Place of Presentation
      柏
    • Year and Date
      2016-01-09
    • Data Source
      KAKENHI-PROJECT-25420300
  • [Presentation] 炭素ドープしたSi基板上AlGaN/GaNヘテロ構造の容量回復特性2016

    • Author(s)
      近松晃仁、中野由崇
    • Organizer
      2016年真空・表面科学合同講演会
    • Place of Presentation
      名古屋国際会議場 (愛知県名古屋市)
    • Year and Date
      2016-11-29
    • Data Source
      KAKENHI-PROJECT-16K06276
  • [Presentation] AlGaN表面特性への酸素プラズマ照射効果2016

    • Author(s)
      新部正人, 川上烈生,中野由崇、田中良、荒木佑馬、東知里、向井孝志
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ、(新潟県新潟市)
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] TiO2薄膜のプラズマ処理試料のXPS 法による組成と触媒活性の相関2016

    • Author(s)
      7) 荒木佑馬,新部正人,川上烈生,竹平徳崇,中野由崇
    • Organizer
      第29回日本放射光学会シンポジウム
    • Place of Presentation
      東京大学柏の葉キャンパス(千葉県柏市)
    • Year and Date
      2016-01-09
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] CF4プラズマ処理したn-GaN膜の電気的ダメージ2016

    • Author(s)
      中野由崇、新部正人、川上烈生
    • Organizer
      2016年真空・表面科学合同講演会
    • Place of Presentation
      名古屋国際会議場(愛知県名古屋市)
    • Year and Date
      2016-11-29
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] A Relation between Pinch-Off Voltages and Deep-Level Defects in AlGaN/GaN Hetero-Structures Treated by CF4 Plasma2015

    • Author(s)
      Y. Nakano, R. Kawakami, M. Niibe, T. Shirahama, T. Mukae
    • Organizer
      11th International Conference on Nitride Semiconductors (ICNS-11)
    • Place of Presentation
      Beijing
    • Year and Date
      2015-08-30
    • Data Source
      KAKENHI-PROJECT-25420300
  • [Presentation] 酸化チタン薄膜表面への酸素プラズマ照射効果2015

    • Author(s)
      11)新部正人,荒木佑馬,竹平徳崇,川上烈生,中野由崇,東知里
    • Organizer
      第76回秋季応用物理学会学術講演会
    • Place of Presentation
      名古屋国際会議場(愛知県名古屋市)
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] Carbon-Related Deep-Level Defects and Carrier Trapping Characteristics in AlGaN/GaN Hetero-Structures2015

    • Author(s)
      Y. Nakano, Y. Irokawa, M. Sumiya, S. Yagi, H. Kawai
    • Organizer
      11th International Conference on Nitride Semiconductors (ICNS-11)
    • Place of Presentation
      Beijing
    • Year and Date
      2015-08-30
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420300
  • [Presentation] 紫外光アシストCF4プラズマでエッチンングされたAlGaN表面分析2015

    • Author(s)
      10)新部正人,川上烈生,中野由崇,竹平徳崇,平井翔大,荒木佑馬,東知里,向井孝志
    • Organizer
      第76回秋季応用物理学会学術講演会
    • Place of Presentation
      名古屋国際会議場(愛知県名古屋市)
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] A Relation between Pinch-Off Voltages and Deep-Level Defects in AlGaN/GaN Hetero-Structures Treated by CF4 Plasma2015

    • Author(s)
      2) Y. Nakano, R. Kawakami, M. Niibe, T. Shirahama and T. Mukai
    • Organizer
      11th International Conference on Nitride Semiconductors (ICNS-11)
    • Place of Presentation
      Beijing, China
    • Year and Date
      2015-08-30
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] Comparison between Surface Characteristics of Titanium Oxide Thin Films Treated with N2 Dielectric Barrier Discharge Plasma and Annealed in N2 Gas2015

    • Author(s)
      5) R. Kawakami, M. Niibe, Y. Nakano and T. Mukai
    • Organizer
      13th International Symposium on Sputtering & Plasma Processes (ISSP)
    • Place of Presentation
      京都リサーチパーク, (京都府京都市)
    • Year and Date
      2015-07-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] CF4とArプラズマで処理したAlGaN/GaNの電気特性2015

    • Author(s)
      川上烈生, 新部正人, 中野由崇, 東知里, 向井孝志
    • Organizer
      平成27年度電気関係学会 四国支部連合大会
    • Place of Presentation
      高知
    • Year and Date
      2015-09-26
    • Data Source
      KAKENHI-PROJECT-25420300
  • [Presentation] Ar+-Irradiation Induced Damage in Hydride Vapor-Phase Epitaxy GaN2015

    • Author(s)
      Y. Nakano, D. Ogawa, K. Nakamura, R. Kawakami, M. Niibe
    • Organizer
      The 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2015)
    • Place of Presentation
      Niigata
    • Year and Date
      2015-06-16
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420300
  • [Presentation] Anatase TiO2 Thin Films Grown by Facing-Target Reactive Sputtering and Its Impact on Photocatalytic Activity2015

    • Author(s)
      1) R. Kawakami, M. Niibe, Y. Nakano, C. Azuma and T. Mukai
    • Organizer
      International Symposium of Dry Process 2015
    • Place of Presentation
      Awaji-Yumebutai International Conference Center, (兵庫県淡路島)
    • Year and Date
      2015-11-05
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] TiO2薄膜のプラズマ処理試料のXPS 法による組成と触媒活性の相関2015

    • Author(s)
      9) 荒木佑馬,新部正人,川上烈生,竹平徳崇,中野由崇
    • Organizer
      第51回X線分析討論会
    • Place of Presentation
      姫路・西はりま地場産業センター(兵庫県姫路市)
    • Year and Date
      2015-10-29
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] Ar+-Irradiation Induced Damage in Metal-Organic Vapor Phase Epitaxy GaN2015

    • Author(s)
      Y. Nakano, D. Ogawa, K. Nakamura, R. Kawakami, M. Niibe
    • Organizer
      The 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2015)
    • Place of Presentation
      Niigata
    • Year and Date
      2015-06-16
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420300
  • [Presentation] AlGaN/GaNヘテロ構造の炭素関連欠陥準位とターンオン電流回復特性2014

    • Author(s)
      中野由崇,色川芳宏,角谷正友, 住田行常, 八木修一, 河合弘治
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス
    • Data Source
      KAKENHI-PROJECT-25420300
  • [Presentation] ArとCF4プラズマで処理したAlGaN膜の表面分析2014

    • Author(s)
      平井翔大,新部正人,白濱達夫,川上烈生,中野由崇,向井孝志
    • Organizer
      兵庫県立大学知の交流シンポジウム
    • Place of Presentation
      姫路商工会議所(兵庫県姫路市)
    • Year and Date
      2014-09-24
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures Containing Various Carbon Concentrations2013

    • Author(s)
      Yoshitaka Nakano, Yoshihiro Irokawa, Masatomo Sumiya, Yasunobu Sumida, Shuichi Yagi, Hiroji Kawai
    • Organizer
      2013 Materials Research Society Fall Meeting
    • Place of Presentation
      Hynes Convention Center (Boston)
    • Data Source
      KAKENHI-PROJECT-25420300
  • [Presentation] Carbon-Related Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures2013

    • Author(s)
      Yoshitaka Nakano, Yoshihiro Irokawa, Yasunobu Sumida, Shuichi Yagi, Hiroji Kawai
    • Organizer
      International Symposium on Compound Semiconductors 2013
    • Place of Presentation
      Kobe Convention Center
    • Data Source
      KAKENHI-PROJECT-25420300
  • [Presentation] Correlation between turn-on recovery characteristics and deep-level defects in AlGaN/GaN hetero-structures2012

    • Author(s)
      Yoshitaka Nakano
    • Organizer
      International Workshop on Nitride Semiconductors 2012
    • Place of Presentation
      札幌コンベンションセンター (札幌)
    • Data Source
      KAKENHI-PROJECT-22560309
  • [Presentation] Correlation between turn-on recovery characteristics and deep-level defects in AlGaN/GaN hetero-structures2012

    • Author(s)
      Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, H.Kawai
    • Organizer
      International Workshop on Nitride Semiconductors2012
    • Place of Presentation
      札幌コンベンションセンター(札幌)Sapporo.
    • Year and Date
      2012-10-16
    • Data Source
      KAKENHI-PROJECT-22560309
  • [Presentation] Effect of Carbon Impurity Incorporation on Band-Gap States in AlGaN/GaN Hetero-Structures2012

    • Author(s)
      Yoshitaka Nakano
    • Organizer
      4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2012)
    • Place of Presentation
      中部大学(愛知県春日井市)
    • Year and Date
      2012-03-07
    • Data Source
      KAKENHI-PROJECT-22560309
  • [Presentation] Correlation between Deep-Level Defects and Current Collapses in AlGaN/GaN Hetero-Structures2012

    • Author(s)
      Y.Nakano
    • Organizer
      11th International Symposium on Advanced Technology
    • Place of Presentation
      工学院大学(東京)
    • Year and Date
      2012-10-31
    • Data Source
      KAKENHI-PROJECT-22560309
  • [Presentation] AlGaN/GaNヘテロ構造のターンオン回復特性と欠陥準位の相関2012

    • Author(s)
      中野由崇
    • Organizer
      応用物理学会
    • Place of Presentation
      愛媛大学 (松山)
    • Data Source
      KAKENHI-PROJECT-22560309
  • [Presentation] Correlation between Deep-Level Defects and Current Collapses in AlGaN/GaN Hetero-Structures2012

    • Author(s)
      Yoshitaka Nakano
    • Organizer
      11th International Symposium on Advanced Technology
    • Place of Presentation
      工学院大学 (東京)
    • Invited
    • Data Source
      KAKENHI-PROJECT-22560309
  • [Presentation] Steady-State Photo-capacitance Spectroscopy Investigation of Band-Gap States in AlGaN/GaN Hetero-Structures with Different Growth Conditions2011

    • Author(s)
      Yoshitaka Nakano
    • Organizer
      Materials Research Society 2011 Fall Meeting
    • Place of Presentation
      Hynes Convention Center (Boston, USA)
    • Year and Date
      2011-12-01
    • Data Source
      KAKENHI-PROJECT-22560309
  • [Presentation] Correlation between Current Collapses and Deep-Level Defects in AlGaN/GaN Hetero-Structures Probed by Photo-Capacitance Spectroscopy2011

    • Author(s)
      Y.Nakano, Y.Irokawa, Y.Sumida, H.Kawai
    • Organizer
      3^<rd> International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
    • Place of Presentation
      名古屋工業大学(愛知県)
    • Year and Date
      2011-03-08
    • Data Source
      KAKENHI-PROJECT-22560309
  • [Presentation] Correlation between Current Collapses and Deep-Level Defects in AlGaN/GaN Hetero-Structures Probed by Photo-Capacitance Spectroscopy2011

    • Author(s)
      Yoshitaka Nakano
    • Organizer
      9th International Conference on Nitride Semiconductors (ICNS-9)
    • Place of Presentation
      Scottish Exhibition and Conference Centre (Glasgow, UK)
    • Year and Date
      2011-07-13
    • Data Source
      KAKENHI-PROJECT-22560309
  • [Presentation] Correlation between Current Collapses and Deep-Level Defects in AlGaN/GaN Hetero -Structures Probed by Photo-Capacitance Spectroscopy2011

    • Author(s)
      Y.Nakano, Y.Irokawa, Y.Sumida, S.Yagi, H.Kawai
    • Organizer
      9th International Conference on Nitride Semiconductors
    • Place of Presentation
      Scottish Exhibition and Conference Centre(Glasgow,UK).
    • Year and Date
      2011-07-13
    • Data Source
      KAKENHI-PROJECT-22560309
  • [Presentation] Current Collapses in AlGaN/GaN Hetero-structures Studied by Deep-level Optical Spectroscopy2010

    • Author(s)
      Y.Nakano, Y.Irokawa, Y.Sumida, H.Kawai
    • Organizer
      Materials Research Society 2010 Fall Meeting
    • Place of Presentation
      Hynes Convention Center (Boston, USA)
    • Year and Date
      2010-11-30
    • Data Source
      KAKENHI-PROJECT-22560309
  • [Presentation] Band Gap States in AlGaN/GaN Hetero-Interface Probed by Deep-Level Optical Spectroscopy2009

    • Author(s)
      Y.Nakano
    • Organizer
      8th Topical Workshop on Heterostructure Microelectronics
    • Place of Presentation
      長野
    • Year and Date
      2009-08-26
    • Data Source
      KAKENHI-PROJECT-21760241
  • [Presentation] Damage Characteristics of n-GaNCrystal Etched with N2 Plasma by Soft X-ray Absorption Spectroscopy

    • Author(s)
      Masahito Niibe, Takuya Kotaka, Retsuo Kawakami, Yoshitaka Nakano and Takashi Mukai
    • Organizer
      7th International Symposium on Surface Science (ISSS-7)
    • Place of Presentation
      Kunibikki Messe, Matsue, Japan
    • Year and Date
      2014-11-02 – 2014-11-06
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] Etching damage analysis of n-GaN crystals etched with N2-plasma using soft X-ray absorption spectroscopy

    • Author(s)
      Masahito Niibe, Takuya Kotaka, Retsuo Kawakami, Yoshitaka Nakano and Takashi Mukai
    • Organizer
      36th International Symposium on Dry Process (DSP2014)
    • Place of Presentation
      PACIFICO Convention Plaza, Yokohama, Japan
    • Year and Date
      2014-11-27 – 2014-11-28
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] Ar+イオン照射したHVPE-GaN膜の電気的評価

    • Author(s)
      中野由崇,中村圭二,新部正人,川上烈生
    • Organizer
      第75回秋季応用物理学会学術講演会
    • Place of Presentation
      北海道大学札幌キャンパス(北海道札幌市)
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] Ar+イオン照射したMOCVD-GaN:Si膜の電気的評価

    • Author(s)
      中野由崇,高木健司,小川大輔,中村圭二,新部正人,川上烈生
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス(神奈川県平塚市)
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] C-t法によるAlGaN/GaNヘテロ構造のターンオン回復特性評価

    • Author(s)
      中野由崇, 色川芳宏, 角谷正友, 八木修一, 河合 弘治
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学 (北海道・札幌市)
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-25420300
  • [Presentation] Ar+イオン照射したMOCVD-GaN:Si膜の電気的評価

    • Author(s)
      中野由崇, 高木健司, 小川大輔, 中村圭二, 新部正人, 川上烈生
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学 (神奈川県・平塚市)
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-25420300
  • [Presentation] Carbon-Related Deep-Level Defects and Carrier-Trapping Characteristics in AlGaN/GaN Hetero-Structures

    • Author(s)
      Yoshitaka Nakano, Yoshihiro Irokawa, Masatomo Sumiya, Shuichi Yagi, Hiroji Kawai
    • Organizer
      7th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials/8th International Conference on Plasma-Nano Technology & Science (ISPlasma2015/IC-PLANTS2015)
    • Place of Presentation
      名古屋大学 (愛知県・名古屋市)
    • Year and Date
      2015-03-26 – 2015-03-31
    • Data Source
      KAKENHI-PROJECT-25420300
  • [Presentation] CF4とArプラズマでエッチングしたAlGaN表面ダメージ

    • Author(s)
      新部正人,川上烈生,中野由崇,向井孝志,白濱達夫,平井翔大
    • Organizer
      第75回秋季応用物理学会学術講演会
    • Place of Presentation
      北海道大学札幌キャンパス(北海道札幌市)
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] X線吸収分光法を用いたTiO2薄膜のプラズマダメージ評価

    • Author(s)
      佐野桂治,新部正人,川上烈生,中野由崇
    • Organizer
      第28回日本放射光学会シンポジウム
    • Place of Presentation
      立命館大学びわこ・くさつキャンパス(滋賀県草津市)
    • Year and Date
      2015-01-10 – 2015-01-12
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] Morphological and Compositional Changes in AlGaN Surfaces etched by RF Capacitively Coupled Carbon Tetrafluoride and Argon Plasmas

    • Author(s)
      R. Kawakami, M. Niibe, Y. Nakano, T. Shirahama, S. Hirai and T. Mukai
    • Organizer
      36th International Symposium on Dry Process (DSP2014)
    • Place of Presentation
      PACIFICO Convention Plaza, Yokohama, Japan
    • Year and Date
      2014-11-27 – 2014-11-28
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] Spectral Recovery of Etching Damage of TiO2 thin film Observed in XAS Spectra

    • Author(s)
      Keiji Sano, Masahito Niibe, Retsuo Kawakami, Yoshitaka Nakano
    • Organizer
      7th International Symposium on Surface Science (ISSS-7)
    • Place of Presentation
      Kunibiki Messe, Matsue, Japan
    • Year and Date
      2014-11-02 – 2014-11-06
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] TiO2超微粒子の軟X線照射によるNEXAFSスペクトル形状の回復

    • Author(s)
      新部正人,佐野桂治,川上烈生,中野由崇
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス(神奈川県平塚市)
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] AlGaN/GaNヘテロ構造における炭素関連の欠陥準位評価

    • Author(s)
      中野由崇
    • Organizer
      日本物理学会 第24回格子欠陥フォーラム「パワーデバイス開発のための格子欠陥評価・制御」
    • Place of Presentation
      かんぽの宿 恵那 (岐阜県・恵那市)
    • Year and Date
      2014-09-11 – 2014-09-12
    • Invited
    • Data Source
      KAKENHI-PROJECT-25420300
  • [Presentation] Generation Behavior of Deep-Level Defects in Ar+-Irradiated GaN

    • Author(s)
      Yoshitaka Nakano, Miao-Gen Chen, Daisuke Ogawa, Keiji Nakamura, Retsuo Kawakami, Masahito Niibe
    • Organizer
      7th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials/8th International Conference on Plasma-Nano Technology & Science (ISPlasma2015/IC-PLANTS2015)
    • Place of Presentation
      名古屋大学 (愛知県・名古屋市)
    • Year and Date
      2015-03-26 – 2015-03-31
    • Data Source
      KAKENHI-PROJECT-25420300
  • [Presentation] ArとCF4プラズマで処理したAlGaN膜の表面分析

    • Author(s)
      平井翔大,新部正人,川上烈生,白濱達夫,中野由崇,向井孝志
    • Organizer
      第28回日本放射光学会シンポジウム
    • Place of Presentation
      立命館大学びわこ・くさつキャンパス(滋賀県草津市)
    • Year and Date
      2015-01-10 – 2015-01-12
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] Surface analysis of AlGaN treated by Ar and CF4 plasma etching

    • Author(s)
      Shodai Hirai, Masahito Niibe, Retsuo Kawakami, Yoshitaka Nakano
    • Organizer
      7th International Symposium on Surface Science (ISSS-7)
    • Place of Presentation
      Kunibiki Messe, Matsue, Japan
    • Year and Date
      2014-11-02 – 2014-11-06
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] CF4プラズマ処理したAlGaN/GaNヘテロ構造の電気的評価

    • Author(s)
      中野由崇, 川上烈生, 新部正人, 高木健司, 白濱達夫, 向井孝志
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学 (神奈川県・平塚市)
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-25420300
  • [Presentation] CF4プラズマ処理したAlGaN/GaNヘテロ構造の電気的評価

    • Author(s)
      中野由崇,川上烈生,新部正人,高木健司,白濱達夫,向井孝志
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス(神奈川県平塚市)
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-26390066
  • [Presentation] Ar+イオン照射したHVPE-GaN膜の電気的評価

    • Author(s)
      中野由崇, 中村圭二, 新部 正人, 川上烈生
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学 (北海道・札幌)
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-25420300
  • 1.  IROKAWA Yoshihiro (90394832)
    # of Collaborated Projects: 6 results
    # of Collaborated Products: 18 results
  • 2.  SUMIYA Masatomo (20293607)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 7 results
  • 3.  Niibe Masahito (10271199)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 47 results
  • 4.  KAWAKAMI Retsuo (30314842)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 47 results
  • 5.  KAWAI Hiroji
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 7 results
  • 6.  KOTAKA Takuya
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 2 results
  • 7.  SANO Keiji
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 4 results
  • 8.  HIRAI Shodai
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 8 results
  • 9.  ARAKI Yuma
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 9 results
  • 10.  TANAKA Ryo
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 3 results

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