Kinoshita Kentaro 木下健太郎

… Alternative Names

KINOSHITA Kentaro 木下健太郎

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Researcher Number	60418118
Other IDs
Affiliation (Current)	2025: 東京理科大学, 先進工学部物理工学科, 教授
Affiliation (based on the past Project Information) *help	2023 – 2024: 東京理科大学, 先進工学部物理工学科, 教授 2022: 東京理科大学, 理学部第一部応用物理学科, 教授 2019 – 2021: 東京理科大学, 理学部第一部応用物理学科, 准教授 2017: 東京理科大学, 理学部第一部応用物理学科, 准教授 2012 – 2016: 鳥取大学, 工学(系)研究科(研究院), 准教授 2012: 鳥取大学, 大学院・工学研究科, 准教授 2011: 鳥取大学, 工学(系)研究科(研究院), 助教
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / Basic Section 21050:Electric and electronic materials-related Except Principal Investigator Basic Section 28010:Nanometer-scale chemistry-related
Keywords	Principal Investigator 抵抗変化メモリ / 水素 / ペロブスカイト酸化物 / ReRAM / 金属酸化物薄膜 / セレクタ / 素励起 / ショットキー接合 / 光 / セレクター … More / 学習 / 金属酸化物 / 物理リザバー / 学習デバイス / 欠陥 / データ保持 / 動作電圧 / ナノ多孔体 / 金属イオン含有イオン液体 / 溶媒添加効果 / 溶媒 / 多結晶薄膜 / 導電性ブリッジメモリ / 金属イオン / 溶媒和イオン液体 / イオン液体 / 溶媒添加 / 細孔 / CBRAM / メモリ素子の高機能化 / 次世代メモリの研究開発 / XAFS / 触媒 / 国際情報交流 / メカニズム / Pt / 抵抗変化 / 銅酸化物超伝導体 / 単結晶 / 抵抗変化メモリ (ReRAM) … More Except Principal Investigator NMR / 構造解析 / MOF / ナノ細孔 / イオン液体 / 金属有機構造体 Less

Structure and dynamics of ionic liquids confined in nanopores of Metal-Organic Frameworks
- Principal Investigator
  
  糸井充穂
- Project Period (FY)
  2023 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 28010:Nanometer-scale chemistry-related
- Research Institution
  Tokyo City University
Application of resistance change memory to ultrasensitive sensors -Exploration of new excitation processes in metal oxides-Principal Investigator
- Principal Investigator
  
  Kinoshita Kentaro
- Project Period (FY)
  2019 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Tokyo University of Science
Proposal of "pore engineering" as a device designing method for conducting-bridge memoryPrincipal Investigator
- Principal Investigator
  
  Kinoshita Kentaro
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo University of Science
  Tottori University
Mechanism elucidation and assessment of the performance of new resistance memory effect caused by movement of hydrogen ionsPrincipal Investigator
- Principal Investigator
  
  KINOSHITA Kentaro
- Project Period (FY)
  2013 – 2014
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tottori University
Mechanism elucidation of resistive switching mechanism using atomic force microscope in oxide-based ReRAMPrincipal Investigator
- Principal Investigator
  
  KINOSHITA Kentaro
- Project Period (FY)
  2011 – 2012
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tottori University

[Book] 「応用物理」学会誌第85巻第2号2016
- Author(s)
  木下健太郎
- Total Pages
  5
- Publisher
  応用物理学会
- Data Source
  KAKENHI-PROJECT-15K06017
[Journal Article] Controlling filament growth mode in resistive random-access memory based on thermal flow2021
- Author(s)
  Yuta Sasaki and Kentaro Kinoshita
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: SB Pages: SBBB01-SBBB01
- DOI
  10.35848/1347-4065/abd9d3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K04476
[Journal Article] Oxide-based selector with trap-filling controlled threshold switching2020
- Author(s)
  Shuhei Saitoh, and Kentaro Kinoshita
- Journal Title
  
  Applied Physics Letters
  
  Volume: 116 Issue: 11 Pages: 112101-112101
- DOI
  10.1063/1.5143631
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K04476
[Journal Article] Improvement of Switching Endurance of Conducting-Bridge Random Access Memory by Addition of Metal Ion-Containing Ionic Liquid2017
- Author(s)
  Kentaro Kinoshita, Atsushi Sakaguchi, Akinori Harada, Hiroki Yamaoka, Satoru Kishida, Yukinobu Fukaya, Toshiki Nokami, Toshiyuki Itoh
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 56 Issue: 4S Pages: 04CE13-04CE13
- DOI
  10.7567/jjap.56.04ce13
- NAID
  210000147592
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K06017, KAKENHI-PROJECT-26241030
[Journal Article] Significantly Improved Performance of a Conducting-bridge Random Access Memory (CB-RAM) Device Using Copper-containing Glyme Salt,2017
- Author(s)
  Yamaoka, H.; Yamashita, T.; Harada, A.; Sakaguchi, A.; Kinoshita, K.; Kishida, S.; Hayase, S.; Nokami, T.; Itoh, T.
- Journal Title
  
  Chem. Lett.
  
  Volume: 46 Issue: 12 Pages: 1832-1835
- DOI
  10.1246/cl.170854
- NAID
  130006243157
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-26241030, KAKENHI-PROJECT-15K06017
[Journal Article] Realization of High Performance and Very High Density by Introducing Porous Bodies into Conducting-Bridge Random Access Memory (CB-RAM)2017
- Author(s)
  木下健太郎
- Journal Title
  
  ゼオライト
  
  Volume: 34 Issue: 1 Pages: 10-18
- DOI
  10.20731/zeoraito.34.1.10
- NAID
  40021079224
- ISSN
  0918-7774
- Year and Date
  2017-01-31
- Language
  Japanese
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K06017
[Journal Article] Influence of ultraviolet irradiation on data retention characteristics in resistive random access memory2016
- Author(s)
  Kouhei Kimura, Kouotoku Ohmi, Satoru Kishida, and Kentaro Kinoshita
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 108 Issue: 12
- DOI
  10.1063/1.4944413
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K06017
[Journal Article] Improved Performance of a Conducting-Bridge Random Access Memory using Ionic Liquids2016
- Author(s)
  Harada, A.; Yamaoka, H.; Tojo, S.; Watanabe, K.; Sakaguchi, A.; Kinoshita, K.; Kishida, S.; Fukaya, Y.; Matsumoto, K.; Hagiwara,R.; Sakaguchi, H.; Nokami, T.; Itoh, T.
- Journal Title
  
  Journal of Materials Chemistry
  
  Volume: 4 Issue: 30 Pages: 7215-7222
- DOI
  10.1039/c6tc01486k
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-15H05844, KAKENHI-PROJECT-26241030, KAKENHI-PROJECT-15K06017, KAKENHI-PROJECT-16K05845
[Journal Article] Enhanced stability of the HfO2 electrolyte and reduced working voltage of a CB-RAM by an ionic liquid2015
- Author(s)
  A. Harada, H. Yamaoka, R. Ogata, K. Watanabe, K. Kinoshita, S. Kishida, T. Nokami and T. Itoh
- Journal Title
  
  Journal of Materials Chemistry C
  
  Volume: 3 Issue: 27 Pages: 6966-6969
- DOI
  10.1039/c5tc01127b
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K06017, KAKENHI-PROJECT-26241030
[Journal Article] Improving Memory Performance of Cu/HfO2/Pt Conducting-Bridge RAM by Solvent Substitution2015
- Author(s)
  K. Kinoshita
- Journal Title
  
  ECS Transactions
  
  Volume: 69 Pages: 11-17
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K06017
[Journal Article] Copper Ion Containing Ionic Liquids Provides Improved Endurance and Switching Voltage Distributions of Conducting-Bridge Random Access Memory2015
- Author(s)
  Akinori Harada, Hiroki Yamaoka, Kouhei Watanabe, Kentaro Kinoshita, Satoru Kishida, Yukinobu Fukaya, Toshiki Nokami, Toshiyuki Itoh
- Journal Title
  
  Chemistry Letter
  
  Volume: 44 Issue: 11 Pages: 1578-1580
- DOI
  10.1246/cl.150773
- NAID
  130005108105
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-15K06017, KAKENHI-PLANNED-15H05844, KAKENHI-PROJECT-26241030, KAKENHI-PROJECT-25410115
[Journal Article] Analysis of memory effect induced by hydrogen annealing2014
- Author(s)
  Akihiro HANADA, Hiroki MIURA, Takeshi NOTSU, Satoru KISHIDA and Kentaro KINOSHITA
- Journal Title
  
  JPS conference proceedings
  
  Volume: 1 Pages: 12089-12093
- DOI
  10.7566/jpscp.1.012089
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25820143
[Journal Article] ペロブスカイト酸化物への水素イオン導入によって誘起される抵抗スイッチング効果の発現機構2014
- Author(s)
  花田明紘, 三浦寛基, 野津武志, 大沢仁志, 伊奈稔哲, 鈴木基寛, 河村直己, 水牧仁一郎, 宇留賀朋哉, 木村滋, 岸田悟, 木下健太郎
- Journal Title
  
  表面科学
  
  Volume: 35 Pages: 356-360
- NAID
  130005473077
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25820143
[Journal Article] Resistive switching by migration of hydrogen ions2012
- Author(s)
  A. Hanada, K. Kinoshita and S. Kishida
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: vol. 101 Issue: 4 Pages: 043507-043507
- DOI
  10.1063/1.4737897
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760313
[Journal Article] Developmental Mechanism for the Memory Effect in Perovskite Oxide-Based ReRAM Consisting of Bi2Sr2CaCu2O8+δ Bulk Single Crystal2012
- Author(s)
  Akihiro Hanada
- Journal Title
  
  Procedia Engineering
  
  Volume: 36 Pages: 411-418
- DOI
  10.1016/j.proeng.2012.03.060
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760313
[Journal Article] High-Speed and Multi-Bit Resistive Switching Brought about by Migration of Hydrogen Ions in Resistive Random Access Memory Consisting of Bi2Sr2CaCu2O8+δSingle Crystal2012
- Author(s)
  A. Hanada, K. Kinoshita, K. Matsubara,and S. Kishida
- Journal Title
  
  Proceedings of IEEE International Memory Workshop 2012
  
  Pages: 198-201
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760313
[Journal Article] Developmental Mechanism for the Resistance Change Effect in Perovskite Oxide-Based Resistive Random Access Memory Consisting of Bi2Sr2CaCu2O8+d Bulk Single Crystal2011
- Author(s)
  A. Hanada, K. Kinoshita, K. Matsubara, T. Fukuhara, and S. Kishida
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 110
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760313
[Journal Article] 銅酸化物高温超伝導体単結晶を用いた抵抗変化メモリのスイッチングメカニズム2011
- Author(s)
  花田明紘, 木下健太郎, 松原勝彦, 福原貴博, 岸田悟
- Journal Title
  
  表面科学
  
  Volume: 32巻 Pages: 428-431
- NAID
  10029410977
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760313
[Journal Article] Developmental Mechanism for the Resistance Change Effect in Perovskite Oxide-Based ResistiveRandom Access Memory Consisting of Bi2Sr2CaCu2O8+δ Bulk Single Crystal2011
- Author(s)
  A. Hanada, K. Kinoshita, K. Matsubara, T. Fukuhara, and S. Kishida
- Journal Title
  
  J. Appl. Phys.
  
  Volume: vol. 110 Pages: 84506-84506
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760313
[Patent] 不揮発性半導体記憶装置および同装置の製造方法2012
- Inventor(s)
  木下健太郎, 岸田悟, 花田明紘, 松原勝彦
- Industrial Property Rights Holder
  鳥取大学
- Industrial Property Number
  2012-046162
- Filing Date
  2012-03-02
- Data Source
  KAKENHI-PROJECT-23760313
[Patent] 不揮発性半導体記憶装置および同装置の製造方法2011
- Inventor(s)
  木下健太郎, 岸田悟, 花田明紘, 松原勝彦, 福原貴博
- Industrial Property Number
  2011-084216
- Filing Date
  2011-04-06
- Data Source
  KAKENHI-PROJECT-23760313
[Presentation] 電極/Nb-dopedSrTiO3界面の光誘起電流を利用したリザバーコンピューティング2023
- Author(s)
  山崎悠太郎・甲斐洋行・木下健太郎
- Organizer
  電子情報通信学会総合大会
- Invited
- Data Source
  KAKENHI-PROJECT-19K04476
[Presentation] ITO/Nb:SrTiO3接合における光誘起電流特性を利用したニューロモルフィックコンピューティング～リザバーコンピューティング応用に向けて～2022
- Author(s)
  山﨑悠太郎, 甲斐洋行, 木下健太郎
- Organizer
  電子情報通信学会電子デバイス研究会
- Data Source
  KAKENHI-PROJECT-19K04476
[Presentation] Electrode/Nb‐doped SrTiO3 junction as a physical reservoir device2021
- Author(s)
  Kentaro Kinoshita
- Organizer
  MEMRISYS 2021
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04476
[Presentation] ペロブスカイト型酸化物抵抗変化メモリの光応答特性評価及び人工シナプスデバイス応用の検討2021
- Author(s)
  山﨑悠太郎, 橋本悠太, 青木裕雅, 木下健太郎
- Organizer
  第82回応用物理学会秋季学術講演会10p-S203-4
- Data Source
  KAKENHI-PROJECT-19K04476
[Presentation] 熱流設計に基づく抵抗変化メモリ(ReRAM)のフィラメントデザイン2021
- Author(s)
  佐々木悠太, 木下健太郎
- Organizer
  第81回応用物理学会秋季学術講演会 11p-Z07-1
- Data Source
  KAKENHI-PROJECT-19K04476
[Presentation] 金属酸化物における抵抗スイッチング現象とデバイス応用2020
- Author(s)
  木下健太郎
- Organizer
  第67回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-19K04476
[Presentation] CoO/ITO二層構造で発現するノンポーラ閾値セレクタ特性2019
- Author(s)
  齋藤修平、木下健太郎
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04476
[Presentation] イオン液体で実現する高性能抵抗可変型メモリ(CB-RAM)2018
- Author(s)
  伊藤敏幸, 野上敏材, 早瀬修一, 木下健太郎
- Organizer
  日本化学会第98春季年会
- Data Source
  KAKENHI-PROJECT-15K06017
[Presentation] Cu含有PEGイオン液体による抵抗可変型メモリの機能向上2017
- Author(s)
  山下拓哉, 山岡弘貴, 原田晃典, 阪口敦, 木下健太郎, 岸田悟, 早瀬修一, 野上敏材, 伊藤敏幸
- Organizer
  第44回有機典型元素化学討論会
- Data Source
  KAKENHI-PROJECT-15K06017
[Presentation] CB-RAM用イオン液体の開発2017
- Author(s)
  山岡弘貴、阪口敦、山下拓哉、木下健太郎、岸田悟、伊藤敏幸
- Organizer
  日本化学会第97春季年会講演番号3E4-46
- Place of Presentation
  神奈川県横浜市慶應義塾大学日吉キャンパス
- Year and Date
  2017-03-16
- Data Source
  KAKENHI-PROJECT-15K06017
[Presentation] 導電性ブリッジメモリにおける金属イオン添加イオン液体供給の影響2016
- Author(s)
  阪口敦, 山岡弘貴, 伊藤敏幸, 岸田悟, 木下健太郎
- Organizer
  第77回応用物理学会秋季学術講演会講演番号13a-A31-11
- Place of Presentation
  新潟県新潟市朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15K06017
[Presentation] イオン液体添加による導電性ブリッジメモリの性能と信頼性の向上2015
- Author(s)
  阪口敦，渡邉浩平，原田晃典, 山岡弘貴, 伊藤敏幸, 岸田悟, 木下健太郎
- Organizer
  2015年真空・表面科学合同講演会
- Place of Presentation
  つくば国際会議場, つくば, 日本
- Year and Date
  2015-11-30
- Data Source
  KAKENHI-PROJECT-15K06017
[Presentation] Improving Memory Performance of Cu/HfO2/Pt Conducting-Bridge RAM by Solvent Substitution2015
- Author(s)
  Kentaro Kinoshita
- Organizer
  The 228th ECS meeting
- Place of Presentation
  Phoenix Convention Center, Phoenix, Arizona, USA
- Year and Date
  2015-10-11
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K06017
[Presentation] 放射光を用いた水素イオン移動型ReRAMの界面状態の観察2014
- Author(s)
  野津武志，花田明紘，三浦寛基，岸田悟，大沢仁志，伊奈稔哲，鈴木基寛，河村直己，水牧仁一郎，宇留賀朋哉，今井康彦，木村滋，木下健太郎
- Organizer
  2014年第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-25820143
[Presentation] Analysis of memory effect induced by hydrogen annealing2013
- Author(s)
  A. Hanada, K. Kinoshita, H. Miura, T. Notsu, S. Kishida
- Organizer
  The 12th Asia Pacific Physics Conference (APPC)
- Place of Presentation
  Makuhari Messe
- Data Source
  KAKENHI-PROJECT-23760313
[Presentation] Analysis of Resistive Switching Effect Induced by Hydrogen Annealing2013
- Author(s)
  Akihiro Hanada , Kentaro Kinoshita, Hiroki Miura, Takeshi Notsu and Satoru Kishida;
- Organizer
  2013年第74回応用物理学会秋季学術講演会 JSAP-MRS Joint Symposia
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-25820143
[Presentation] ペロブスカイト酸化物への水素イオン導入によって誘起される抵抗スイッチング効果の発現機構2013
- Author(s)
  花田明紘, 三浦寛基, 野津武志, 大沢仁志, 伊奈稔哲, 鈴木基寛, 河村直己, 水牧仁一郎, 宇留賀朋哉, 木村滋, 岸田悟, 木下健太郎
- Organizer
  第33回　表面科学学術講演会
- Place of Presentation
  つくば国際会議場
- Data Source
  KAKENHI-PROJECT-25820143
[Presentation] 抵抗変化メモリ(ReRAM)のスイッチング機構と動作特性の制御2012
- Author(s)
  木下健太郎, 岸田悟
- Organizer
  ReRAMワークショップ
- Place of Presentation
  茨城, 物質・材料研究機構(招待講演)
- Year and Date
  2012-03-14
- Data Source
  KAKENHI-PROJECT-23760313
[Presentation] ペロブスカイト型抵抗変化メモリのスイッチング機構 -機構解明に向けた放射光利用の可能性-2012
- Author(s)
  木下健太郎
- Organizer
  放射光による時分割計測の新展開
- Place of Presentation
  東京 KFC Hall 2nd (国際ファッションセンター)
- Data Source
  KAKENHI-PROJECT-23760313
[Presentation] 抵抗変化メモリ, 新原理FET, 原子スイッチ技術の最新動向2012
- Author(s)
  木下健太郎
- Organizer
  酸化物エレクトロニクススクール
- Place of Presentation
  産業技術総合研究所
- Year and Date
  2012-10-29
- Data Source
  KAKENHI-PROJECT-23760313
[Presentation] 抵抗変化メモリ(ReRAM)のスイッチング機構と動作特性の制御2012
- Author(s)
  木下健太郎, 岸田悟
- Organizer
  ReRAMワークショップ(招待講演)
- Place of Presentation
  茨城, 物質・材料研究機構
- Data Source
  KAKENHI-PROJECT-23760313
[Presentation] ペロブスカイト型抵抗変化メモリのスイッチング機構 -機構解明に向けた放射光利用の可能性-2012
- Author(s)
  木下健太郎
- Organizer
  平成23年度GIGNO研究領域創成支援プロジェクト研究会高繰り返しシングルバンチ切り出しチョッパーが拓く科学　－放射光による時分割計測の新展開－(招待講演)
- Place of Presentation
  東京, KFC Hall 2nd (国際ファッションセンター)
- Data Source
  KAKENHI-PROJECT-23760313
[Presentation] 水素イオン移動型ReRAMの抵抗変化特性2012
- Author(s)
  三浦寛基, 木下健太郎, 花田明紘, 野津武志, 岸田悟
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学
- Data Source
  KAKENHI-PROJECT-23760313
[Presentation] ペロブスカイト酸化物系ReRAMのスイッチングメカニズム2011
- Author(s)
  花田明紘, 木下健太郎, 松原勝彦, 岸田悟
- Organizer
  電子情報通信学会・集積回路研究会(ICD)
- Place of Presentation
  兵庫, 神戸大学
- Data Source
  KAKENHI-PROJECT-23760313
[Presentation] Micro-Fabrication Method of Josephson Junctions without Etching Process2011
- Author(s)
  A. Hanada,K. KinoshitaBi, K. Matsubara, and S. Kishida
- Organizer
  IUMRS-ICA 2011
- Place of Presentation
  Taipei, Taiwan
- Data Source
  KAKENHI-PROJECT-23760313
[Presentation] Developmental Mechanism for the Memory Effect in Perovskite Oxide-Based ReRAM Consisting of2Sr2CaCu2O8+δBulk Single Crystal2011
- Author(s)
  A. Hanada,K. KinoshitaBi, K. Matsubara, and S. Kishida
- Organizer
  IUMRS-ICA 2011
- Place of Presentation
  Taipei, Taiwan
- Data Source
  KAKENHI-PROJECT-23760313
[Presentation] ペロブスカイト酸化物系ReRAMのスイッチングメカニズム2011
- Author(s)
  松原勝彦, 木下健太郎, 花田明紘, 岸田悟
- Organizer
  2011年中国四国地方応用物理学会
- Place of Presentation
  鳥取, 鳥取大学
- Data Source
  KAKENHI-PROJECT-23760313
[Presentation] ペロブスカイト酸化物系ReRAM における抵抗変化の発現機構2011
- Author(s)
  花田明紘, 木下健太郎, 松原勝彦, 岸田悟
- Organizer
  第72回2011年秋季応用物理学会学術講演会, 31p-ZK-14
- Place of Presentation
  山形, 山形大学
- Data Source
  KAKENHI-PROJECT-23760313
[Presentation] ペロブスカイト酸化物系ReRAM における抵抗変化の発現機構2011
- Author(s)
  花田明紘, 木下健太郎 , 松原勝彦, 岸田悟
- Organizer
  第72回2011年秋季応用物理学会学術講演会
- Place of Presentation
  山形, 山形大学
- Data Source
  KAKENHI-PROJECT-23760313
[Presentation] 銅酸化物超伝導体単結晶をプローブとしたペロブスカイト型ReRAM抵抗スイッチングの解明2011
- Author(s)
  松原勝彦,木下健太郎,花田明紘, 岸田悟
- Organizer
  2011年第52回真空に関する連合講演
- Place of Presentation
  東京, 学習院大学
- Data Source
  KAKENHI-PROJECT-23760313
[Presentation] 銅酸化物超伝導体単結晶をプローブとしたペロブスカイト型ReRAM抵抗スイッチングの解明2011
- Author(s)
  松原勝彦, 木下健太郎, 花田明紘, 岸田悟
- Organizer
  2011年第52回真空に関する連合講演会，18Ba-2
- Place of Presentation
  東京, 学習院大学
- Data Source
  KAKENHI-PROJECT-23760313
[Presentation] Developmental Mechanism for the Memory Effect in Perovskite Oxide-Based ReRAM Consisting of Bi2Sr2CaCu2O8+δ Bulk Single Crystal2011
- Author(s)
  A. Hanada, K. Kinoshita, K. Matsubara, and S. Kishida
- Organizer
  IUMRS-ICA 2011
- Place of Presentation
  Taipei, Taiwan
- Data Source
  KAKENHI-PROJECT-23760313
[Presentation] Pt/ペロブスカイト酸化物構造の水素吸蔵材料としての検討
- Author(s)
  塩見俊樹, 野津武志, 岸田悟, 木下健太郎
- Organizer
  第55回真空に関する連合講演会, 講演番号18p-33V
- Place of Presentation
  大阪府立大学[I-siteなんば]
- Year and Date
  2014-11-18 – 2014-11-20
- Data Source
  KAKENHI-PROJECT-25820143

1. 伊藤敏幸 (50193503)

# of Collaborated Projects: 1 results

# of Collaborated Products: 10 results
2. 糸井充穂 (40422448)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. 開康一 (00306523)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. 上床美也 (40213524)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. 野上敏材

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Kinoshita Kentaro 木下 健太郎

KINOSHITA Kentaro 木下 健太郎

Research Projects

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Structure and dynamics of ionic liquids confined in nanopores of Metal-Organic Frameworks

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Application of resistance change memory to ultrasensitive sensors -Exploration of new excitation processes in metal oxides-Principal Investigator

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Proposal of "pore engineering" as a device designing method for conducting-bridge memoryPrincipal Investigator

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Mechanism elucidation and assessment of the performance of new resistance memory effect caused by movement of hydrogen ionsPrincipal Investigator

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Mechanism elucidation of resistive switching mechanism using atomic force microscope in oxide-based ReRAMPrincipal Investigator

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[Book] 「応用物理」学会誌第85巻第2号2016

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[Journal Article] Controlling filament growth mode in resistive random-access memory based on thermal flow2021

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[Journal Article] Oxide-based selector with trap-filling controlled threshold switching2020

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[Journal Article] Improvement of Switching Endurance of Conducting-Bridge Random Access Memory by Addition of Metal Ion-Containing Ionic Liquid2017

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[Journal Article] Significantly Improved Performance of a Conducting-bridge Random Access Memory (CB-RAM) Device Using Copper-containing Glyme Salt,2017

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[Journal Article] Realization of High Performance and Very High Density by Introducing Porous Bodies into Conducting-Bridge Random Access Memory (CB-RAM)2017

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[Journal Article] Influence of ultraviolet irradiation on data retention characteristics in resistive random access memory2016

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[Journal Article] Improved Performance of a Conducting-Bridge Random Access Memory using Ionic Liquids2016

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Kinoshita Kentaro 木下健太郎

KINOSHITA Kentaro 木下健太郎

[Presentation] ITO/Nb:SrTiO3接合における光誘起電流特性を利用したニューロモルフィックコンピューティング～リザバーコンピューティング応用に向けて～2022