Okamoto Mitsuo 岡本光央

… Alternative Names

岡本光央オカモトミツオ

OKAMOTO Mitsuo 岡本光央

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Researcher Number	60450665
Affiliation (Current)	2025: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 主任研究員
Affiliation (based on the past Project Information) *help	2017 – 2019: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 主任研究員 2015: 国立研究開発法人産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 研究員 2015: 国立研究開発法人産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 主任研究員 2014: 独立行政法人産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 主任研究員 2013: 独立行政法人産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 研究員
Review Section/Research Field	Except Principal Investigator Thin film/Surface and interfacial physical properties
Keywords	Except Principal Investigator 移動度劣化 / ESR / MOS界面 / 界面欠陥 / 炭化ケイ素 / 閾値変動 / 電子スピン共鳴分光 / 界面準位 / MOSFET / 4H-SiC … More / パワーエレクトロニクス / MOS界面欠陥 / GaN / SiC / 第一原理計算 / ダングリングボンド / 電子スピン共鳴 / 窒化ガリウム / ワイドギャップ半導体 / しきい値シフト / 界面水素 / チャネルドーピング / 界面窒素 / EDMR / しきい値電圧 / 電流検出ESR法 / ESR法 / 電界効果トランジスタ / 酸化膜界面 / チャネル移動度 Less

Electron-spin-resonance characterization on interface defects at wide-gap semiconductor (SiC and GaN) MOS interfaces
- Principal Investigator
  
  Umeda Takahide
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  University of Tsukuba
Electron-spin-resonance study on SiC-MOSFETs and their MOS interface defects related to channel-mobility degradation
- Principal Investigator
  
  Fujinoki Takahide
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  University of Tsukuba

All 2020 2019 2018 2017 2016 2015 2014 2013 Other

All Journal Article Presentation

[Journal Article] Electrically detected-magnetic-resonance identifications of defects at 4H-SiC(000 )/ SiO2 interfaces with wet oxidation2020
- Author(s)
  T. Umeda, Y. Kagoyama, K. Tomita, Y. Abe, M. Sometani, M. Okamoto, S. Harada, T. Hatakeyama
- Journal Title
  
  Applied Physics Letters
  
  Volume: 115 Issue: 15 Pages: 151602-151602
- DOI
  10.1063/1.5116170
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H02781
[Journal Article] Anomalous carbon clusters in 4H-SiC/SiO2 interfaces2019
- Author(s)
  Y. Kagoyama, M. Okamoto, T. Yamasaki, N. Tajima, J. Nara, T. Ohno, H. Yano, S. Harada, and T. Umeda
- Journal Title
  
  J. Applied Physics
  
  Volume: 125 Issue: 6 Pages: 065302-065302
- DOI
  10.1063/1.5066356
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H03830, KAKENHI-PROJECT-17H02781
[Journal Article] Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors2018
- Author(s)
  Y. Abe, T. Umeda, M. Okamoto, R. Kosugi, S. Harada, M. Haruyama, W. Kada, O. Hanaizumi, S. Onoda, T. Ohshima
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 112 Issue: 3
- DOI
  10.1063/1.4994241
- NAID
  120007133812
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H01056, KAKENHI-PROJECT-17H02781
[Journal Article] Interface defects in C-face 4H-SiC MOSFETs: An electrically-detected-magnetic-resonance study2017
- Author(s)
  T. Umeda, M. Okamoto, H. Yoshioka, G.-W. Kim, S. Ma, R. Arai, T. Makino, T. Ohshima, S. Harada
- Journal Title
  
  ECS Transactions
  
  Volume: 80 Issue: 1 Pages: 147-153
- DOI
  10.1149/08001.0147ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H02781
[Journal Article] Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements2017
- Author(s)
  T. Hatakeyama, Y. Kiuchi, M. Sometani, S. Harada, D. Okamoto, H. Yano, Y. Yonezawa, H. Okumura
- Journal Title
  
  Applied Physics Express
  
  Volume: 10 Issue: 4 Pages: 046601-046601
- DOI
  10.7567/apex.10.046601
- NAID
  210000135827
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H02781
[Journal Article] Improvement of channel mobility in 4H-SiC C-face MOSFETs by H2 rich wet re-oxidation2014
- Author(s)
  M. Okamoto, Y. Makibuchi, M. Araoka, M. Miyazato, N. Sugahara, T. Tsutsumi, Y. Ohnishi, H. Kimura, S. Harada, K. Fukuda, A. Ohtsuki, H. Okumura
- Journal Title
  
  Materials Science Forum
  
  Volume: 778-780 Pages: 975-978
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25286054
[Journal Article] C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance2014
- Author(s)
  T. Umeda, M. Okamoto, R. Arai, Y. Satoh, R. Kosugi, S. Harada, H. Okumura, T. Makino, T. Ohshima
- Journal Title
  
  Materials Science Forum
  
  Volume: 778-780 Pages: 414-417
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25286054
[Journal Article] 4H-SiC MOS界面の電子スピン共鳴分光評価2013
- Author(s)
  梅田享英, 岡本光央, 小杉亮治, 原田信介, 荒井亮, 佐藤嘉洋, 牧野高紘, 大島武, 奥村元
- Journal Title
  
  シリコンテクノロジー（応用物理学会分科会）
  
  Volume: 161 Pages: 98-102
- Data Source
  KAKENHI-PROJECT-25286054
[Journal Article] SiC MOS interface states: difference between Si face and C face2013
- Author(s)
  T. Umeda, M. Okamoto, R. Kosugi, R. Arai, Y. Sato, S. Harada, T. Makino, T. Ohshima
- Journal Title
  
  ECS Transactions
  
  Volume: 58 Pages: 55-60
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] Identifications of major and minor interface defects at C-face 4H-SiC/SiO2 interfaces with wet oxidation2019
- Author(s)
  T. Umeda, Y. Kagoyama, K. Tomita, Y. Abe, M. Sometani, M. Okamoto, T. Hatakeyama, S. Harada
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] C面４H-SiCウェット酸化の特殊性と界面欠陥：EDMR分光からの知見2019
- Author(s)
  梅田享英，鹿児山陽平，富田和輝，阿部裕太，岡本光央，畠山哲夫，原田信介
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] Oxidation-process dependence of single photon sources embedded in 4H-SiC MOSFETs2017
- Author(s)
  Y. Abe, T. Umeda, M. Okamoto, R. Kosugi, S. Harada, M. Haruyama, W. Kada, O. Hanaizumi, S. Onoda, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM) 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] Interface defects related to threshold-voltage shift in C-face 4H-SiC MOSFETs: An EDMR study2017
- Author(s)
  T. Umeda, M. Okamoto, H. Yoshioka, G.-W. Kim, S. Ma, R. Arai, T. Makino, T. Ohshima, S. Harada
- Organizer
  232nd Electrochemical Society Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] 4H-SiC MOSFET中の単一表面欠陥の共焦点顕微鏡観察2016
- Author(s)
  梅田享英、阿部裕太、Y.-W. Zhu、岡本光央、小杉亮治、原田信介、春山盛善、小野田忍、大島武
- Organizer
  第63回応用物理学学術講演会
- Place of Presentation
  東京工業大学（東京都目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] エピタキシャル基板を使用した4H-SiC MOS窒化界面のESR評価2016
- Author(s)
  梅田享英、鹿児山陽平、奥田貴史、須田淳、木本暢恒、小杉亮治、岡本光央、原田信介
- Organizer
  第63回応用物理学学術講演会
- Place of Presentation
  東京工業大学（東京都目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] Microscopic difference between dry and wet oxidations of C-face 4H-SiC MOSFFETs studied by electrically detected magnetic resonance2015
- Author(s)
  Y. Kagoyama, M. Okamoto, S. Harada, R. Arai, T. Umeda
- Organizer
  International Conference on Silicon Carbide and Related Materials 2016
- Place of Presentation
  Sicily, Italy
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] Electrically Detected Magnetic Resonance Study on Interface Defects Responsible forThreshold‐Voltage Shift in C‐face 4H‐SiC MOSFETs2015
- Author(s)
  T. Umeda, R. Arai, S.J. Ma, G.W. Kim, M. Okamoto, H. Yoshioka, S. Harada, T. Makino, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials 2016
- Place of Presentation
  Sicily, Italy
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] An interfacial defect complex (the P8/9 centers) in C-face 4H-SiC MOSFET studied by electrically detected magnetic resonance2015
- Author(s)
  T. Umeda, R. Arai, M. Okamoto, R. Kosugi, S. Harada
- Organizer
  International Conference on Silicon Carbide and Related Materials 2016
- Place of Presentation
  Sicily, Italy
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] 電流検出ESRによる C面4H-SiC MOSFET界面欠陥からの水素脱離の観察
- Author(s)
  荒井亮、梅田享英、佐藤嘉洋、岡本光央、原田信介、小杉亮治、奥村元、牧野高紘、大島武
- Organizer
  第74回応用物理学会学術講演会
- Place of Presentation
  同志社大学、京都府
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance
- Author(s)
  T. Umeda, M. Okamoto, R. Arai, Y. Satoh, R. Kosugi, S. Harada, H. Okumura, T. Makino, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials 2013
- Place of Presentation
  Miyazaki, Japan
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] Electrically Detected Magnetic Resonance (EDMR) Study on Interface Defects in C-face 4H-SiC Metal-Oxide-Semi-conductor Field Effect Transistors
- Author(s)
  G.W. Kim, S.J. Ma, R. Arai, M. Okamoto, S. Harada, T. Makino, T. Ohshima, T. Umeda
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-15
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] Nitrogen doping to channel regions of 4H-SiC MOSFETs characterized by electron spin resonance
- Author(s)
  T. Umeda, Y. Sato, R. Kosugi, M. Okamoto), S. Harada, H. Okumura
- Organizer
  European Conference on Silicon Carbide and Related Materials (ECSCRM) 2014
- Place of Presentation
  Grenoble, France
- Year and Date
  2014-09-21 – 2014-09-25
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] SiC MOS interface states: difference between Si face and C face
- Author(s)
  T. Umeda, M. Okamoto, R. Kosugi, R. Arai, Y. Sato, S. Harada, T. Makino, T. Ohshima
- Organizer
  224th Electrochemical Society Meeting
- Place of Presentation
  The Hilton San Francisco Hotel, San Francisco, USA
- Invited
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] 水素リッチウェット再酸化によって作製された4H-SiC(000-1)面上MOSFET
- Author(s)
  岡本光央、巻渕陽一、荒岡幹、宮里真樹、須ケ原紀之　、堤岳志、大西泰彦、木村浩、原田信介、福田憲司、大月章弘、奥村元
- Organizer
  SiC及び関連半導体研究第22回講演会
- Place of Presentation
  埼玉会館、埼玉県
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] 容量検出型電子スピン共鳴分光法による4H-SiC MOSFETの結晶欠陥の測定
- Author(s)
  鹿児山陽平、岡本光央、小杉亮治、原田信介、牧野高紘、大島武、梅田享英
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-15
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] Defects in 4H-SiC MOSFETs studied by Capacitively Detected Magnetic Resonance
- Author(s)
  Y. Kagoyama, T. Umeda, M. Okamoto, R. Kosugi, S. Harada, T. Makino, T. Ohshima
- Organizer
  European Conference on Silicon Carbide and Related Materials (ECSCRM) 2014
- Place of Presentation
  Grenoble, France
- Year and Date
  2014-09-21 – 2014-09-25
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] Improvement of channel mobility in 4H-SiC C-face MOSFETs by H2 rich wet re-oxidation
- Author(s)
  M. Okamoto, Y. Makibuchi, M. Araoka, M. Miyazato, N. Sugahara, T. Tsutsumi, Y. Ohnishi, H. Kimura, S. Harada, K. Fukuda, A. Ohtsuki, H. Okumura
- Organizer
  International Conference on Silicon Carbide and Related Materials 2013
- Place of Presentation
  Phoenix Seagaia Resort, Miyazaki, Japan
- Data Source
  KAKENHI-PROJECT-25286054

1. Fujinoki Takahide (10361354)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
2. HARADA Shinsuke (20392649)

# of Collaborated Projects: 2 results

# of Collaborated Products: 25 results
3. KOSUGI Ryouji (10356991)

# of Collaborated Projects: 1 results

# of Collaborated Products: 12 results
4. ONO Takahisa

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
5. 梅田享英

# of Collaborated Projects: 0 results

# of Collaborated Products: 22 results
6. 大島武

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Okamoto Mitsuo 岡本 光央

岡本 光央 オカモト ミツオ

OKAMOTO Mitsuo 岡本 光央

Research Projects

Research Products

Co-Researchers

Electron-spin-resonance characterization on interface defects at wide-gap semiconductor (SiC and GaN) MOS interfaces

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Electron-spin-resonance study on SiC-MOSFETs and their MOS interface defects related to channel-mobility degradation

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Electrically detected-magnetic-resonance identifications of defects at 4H-SiC(000 )/ SiO2 interfaces with wet oxidation2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Anomalous carbon clusters in 4H-SiC/SiO2 interfaces2019

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors2018

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Interface defects in C-face 4H-SiC MOSFETs: An electrically-detected-magnetic-resonance study2017

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements2017

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Improvement of channel mobility in 4H-SiC C-face MOSFETs by H2 rich wet re-oxidation2014

Author(s)

Journal Title

Data Source

[Journal Article] C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance2014

Author(s)

Journal Title

Data Source

[Journal Article] 4H-SiC MOS界面の電子スピン共鳴分光評価2013

Author(s)

Journal Title

Data Source

[Journal Article] SiC MOS interface states: difference between Si face and C face2013

Author(s)

Journal Title

Data Source

[Presentation] Identifications of major and minor interface defects at C-face 4H-SiC/SiO2 interfaces with wet oxidation2019

Author(s)

Organizer

Data Source

[Presentation] C面４H-SiCウェット酸化の特殊性と界面欠陥：EDMR分光からの知見2019

Author(s)

Organizer

Data Source

[Presentation] Oxidation-process dependence of single photon sources embedded in 4H-SiC MOSFETs2017

Author(s)

Organizer

Data Source

[Presentation] Interface defects related to threshold-voltage shift in C-face 4H-SiC MOSFETs: An EDMR study2017

Author(s)

Organizer

Data Source

[Presentation] 4H-SiC MOSFET中の単一表面欠陥の共焦点顕微鏡観察2016

Author(s)

Organizer

Okamoto Mitsuo 岡本光央

岡本光央オカモトミツオ

OKAMOTO Mitsuo 岡本光央