Yamada Hisashi 山田永

… Alternative Names

山田永ヤマダヒサシ

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Researcher Number	60644432
Other IDs	https://orcid.org/0000-0001-7850-9964
Affiliation (Current)	2024: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究グループ長
Affiliation (based on the past Project Information) *help	2019 – 2022: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related Except Principal Investigator Basic Section 21060:Electron device and electronic equipment-related
Keywords	Principal Investigator 紫外光域 / トップエミッション型 / MOCVD / AlGaN系LED / 残留不純物 / 光反射 / 歪み緩和 / ジボラン / UV-LED / AlGaN / 六方晶窒化ホウ素 … More Except Principal Investigator … More Fin FET / 選択成長 / FinFET / 立体チャネル / パワーデバイス / GaN / 窒化ガリウム Less

Top emission UV-LEDs using h-BNPrincipal Investigator
- Principal Investigator
  
  山田永
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  National Institute of Advanced Industrial Science and Technology
GaN transited having 3-dimensional channels with various operation modes using selectively grown Fin structures
- Principal Investigator
  
  Tsutsui Kazuo
- Project Period (FY)
  2019 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Tokyo Institute of Technology

All 2023 2022 2021

All Journal Article Patent

[Journal Article] Reduction in Residual Impurities in Chemical Vapor Deposition-Grown Hexagonal Boron Nitride Thin Films2023
- Author(s)
  Yamada Hisashi
- Journal Title
  
  physica status solidi (b)
  
  Volume: 2023 Issue: 8 Pages: 2200352-2200352
- DOI
  10.1002/pssb.202200352
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K04147
[Journal Article] Fully-relaxed n-AlGaN on AlN / Al2O3 templates using strain-relaxed super-lattice buffer layers2022
- Author(s)
  Yamada Hisashi
- Journal Title
  
  Materials Chemistry and Physics
  
  Volume: 291 Pages: 126738-126738
- DOI
  10.1016/j.matchemphys.2022.126738
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K04147
[Patent] 化合物半導体基板2021
- Inventor(s)
  山田　永
- Industrial Property Rights Holder
  国立研究開発法人産業技術総合研究所
- Industrial Property Rights Type
  特許
- Filing Date
  2021
- Data Source
  KAKENHI-PROJECT-21K04147

1. Tsutsui Kazuo (60188589)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
2. 清水三聡 (10357212)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. 星井拓也 (20611049)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. 角嶋邦之 (50401568)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. 熊谷直人 (40732152)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. 山田寿一 (20358261)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results

Yamada Hisashi 山田永

山田永ヤマダヒサシ

Research Projects

Research Products

Co-Researchers

Top emission UV-LEDs using h-BNPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

GaN transited having 3-dimensional channels with various operation modes using selectively grown Fin structures

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Journal Article] Reduction in Residual Impurities in Chemical Vapor Deposition-Grown Hexagonal Boron Nitride Thin Films2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Fully-relaxed n-AlGaN on AlN / Al2O3 templates using strain-relaxed super-lattice buffer layers2022

Author(s)

Journal Title

DOI

Data Source

[Patent] 化合物半導体基板2021

Inventor(s)

Industrial Property Rights Holder

Industrial Property Rights Type

Filing Date

Data Source

Yamada Hisashi 山田 永

山田 永 ヤマダ ヒサシ

Research Projects

Research Products

Co-Researchers

Top emission UV-LEDs using h-BNPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

GaN transited having 3-dimensional channels with various operation modes using selectively grown Fin structures

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Journal Article] Reduction in Residual Impurities in Chemical Vapor Deposition-Grown Hexagonal Boron Nitride Thin Films2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Fully-relaxed n-AlGaN on AlN / Al2O3 templates using strain-relaxed super-lattice buffer layers2022

Author(s)

Journal Title

DOI

Data Source

[Patent] 化合物半導体基板2021

Inventor(s)

Industrial Property Rights Holder

Industrial Property Rights Type

Filing Date

Data Source

Yamada Hisashi 山田永

山田永ヤマダヒサシ